CN101939843B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN101939843B
CN101939843B CN2009801044409A CN200980104440A CN101939843B CN 101939843 B CN101939843 B CN 101939843B CN 2009801044409 A CN2009801044409 A CN 2009801044409A CN 200980104440 A CN200980104440 A CN 200980104440A CN 101939843 B CN101939843 B CN 101939843B
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China
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type well
region
main electrode
conductive
zone
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Chinese (zh)
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CN101939843A (zh
Inventor
大塚拓一
箕谷周平
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to CN201210278267.8A priority Critical patent/CN102820338B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2009801044409A 2008-02-06 2009-02-06 半导体装置 Active CN101939843B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210278267.8A CN102820338B (zh) 2008-02-06 2009-02-06 半导体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008026973 2008-02-06
JP2008-026973 2008-02-06
PCT/JP2009/052050 WO2009099182A1 (ja) 2008-02-06 2009-02-06 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210278267.8A Division CN102820338B (zh) 2008-02-06 2009-02-06 半导体装置

Publications (2)

Publication Number Publication Date
CN101939843A CN101939843A (zh) 2011-01-05
CN101939843B true CN101939843B (zh) 2012-09-26

Family

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CN201210278267.8A Active CN102820338B (zh) 2008-02-06 2009-02-06 半导体装置
CN2009801044409A Active CN101939843B (zh) 2008-02-06 2009-02-06 半导体装置

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CN201210278267.8A Active CN102820338B (zh) 2008-02-06 2009-02-06 半导体装置

Country Status (5)

Country Link
US (1) US20110012132A1 (enExample)
EP (1) EP2242107A4 (enExample)
JP (2) JP5693851B2 (enExample)
CN (2) CN102820338B (enExample)
WO (1) WO2009099182A1 (enExample)

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Publication number Priority date Publication date Assignee Title
CN106098539B (zh) 2009-09-07 2019-02-22 罗姆股份有限公司 半导体装置
US8860039B2 (en) 2010-04-26 2014-10-14 Mitsubishi Electric Corporation Semiconductor device
US8674439B2 (en) 2010-08-02 2014-03-18 Microsemi Corporation Low loss SiC MOSFET
JP5002693B2 (ja) * 2010-09-06 2012-08-15 株式会社東芝 半導体装置
JP2012064873A (ja) * 2010-09-17 2012-03-29 Rohm Co Ltd 半導体装置およびその製造方法
JP5787655B2 (ja) 2010-11-26 2015-09-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
CN102544091A (zh) * 2010-12-17 2012-07-04 浙江大学 新型碳化硅mosfet
JP5621621B2 (ja) * 2011-01-24 2014-11-12 三菱電機株式会社 半導体装置と半導体装置の製造方法
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) * 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
JP5995435B2 (ja) 2011-08-02 2016-09-21 ローム株式会社 半導体装置およびその製造方法
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2013036370A1 (en) * 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
JP2013179361A (ja) * 2013-06-13 2013-09-09 Mitsubishi Electric Corp 半導体装置
WO2014204491A1 (en) * 2013-06-21 2014-12-24 Microsemi Corporation Low loss sic mosfet
US10192958B2 (en) * 2014-06-24 2019-01-29 General Electric Company Cellular layout for semiconductor devices
JP6523887B2 (ja) * 2015-09-11 2019-06-05 株式会社東芝 半導体装置
DE112017008299T5 (de) * 2017-12-21 2020-10-15 Mitsubishi Electric Corporation Halbleitereinheit
US20210399128A1 (en) * 2020-06-19 2021-12-23 Cree, Inc. Power devices with a hybrid gate structure

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CN1777982A (zh) * 2003-04-24 2006-05-24 克里公司 具有自对准的源区和阱区的碳化硅功率器件及其制备方法
CN101114593A (zh) * 2006-07-28 2008-01-30 财团法人电力中央研究所 提高SiC晶体质量的方法和SiC半导体器件

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JP3471823B2 (ja) * 1992-01-16 2003-12-02 富士電機株式会社 絶縁ゲート型半導体装置およびその製造方法
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JP3279151B2 (ja) * 1995-10-23 2002-04-30 トヨタ自動車株式会社 半導体装置及びその製造方法
EP0772241B1 (en) * 1995-10-30 2004-06-09 STMicroelectronics S.r.l. High density MOS technology power device
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JP4123636B2 (ja) * 1998-06-22 2008-07-23 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP3428459B2 (ja) * 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
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JP3997886B2 (ja) * 2002-10-22 2007-10-24 日産自動車株式会社 炭化珪素半導体装置の製造方法
JP4627211B2 (ja) * 2005-04-22 2011-02-09 三菱電機株式会社 炭化珪素半導体装置、及びその製造方法

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CN101114593A (zh) * 2006-07-28 2008-01-30 财团法人电力中央研究所 提高SiC晶体质量的方法和SiC半导体器件

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Also Published As

Publication number Publication date
EP2242107A1 (en) 2010-10-20
CN102820338B (zh) 2016-05-11
JP2015109472A (ja) 2015-06-11
US20110012132A1 (en) 2011-01-20
JP5693851B2 (ja) 2015-04-01
JPWO2009099182A1 (ja) 2011-05-26
CN102820338A (zh) 2012-12-12
JP6055498B2 (ja) 2016-12-27
EP2242107A4 (en) 2012-04-25
CN101939843A (zh) 2011-01-05
WO2009099182A1 (ja) 2009-08-13

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