CN102820338B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102820338B
CN102820338B CN201210278267.8A CN201210278267A CN102820338B CN 102820338 B CN102820338 B CN 102820338B CN 201210278267 A CN201210278267 A CN 201210278267A CN 102820338 B CN102820338 B CN 102820338B
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region
conductivity type
type well
main electrode
concentration
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Chinese (zh)
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CN102820338A (zh
Inventor
大塚拓一
箕谷周平
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Rohm Co Ltd
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Rohm Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201210278267.8A 2008-02-06 2009-02-06 半导体装置 Active CN102820338B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008026973 2008-02-06
JP2008-026973 2008-02-06
CN2009801044409A CN101939843B (zh) 2008-02-06 2009-02-06 半导体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2009801044409A Division CN101939843B (zh) 2008-02-06 2009-02-06 半导体装置

Publications (2)

Publication Number Publication Date
CN102820338A CN102820338A (zh) 2012-12-12
CN102820338B true CN102820338B (zh) 2016-05-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN2009801044409A Active CN101939843B (zh) 2008-02-06 2009-02-06 半导体装置
CN201210278267.8A Active CN102820338B (zh) 2008-02-06 2009-02-06 半导体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2009801044409A Active CN101939843B (zh) 2008-02-06 2009-02-06 半导体装置

Country Status (5)

Country Link
US (1) US20110012132A1 (enExample)
EP (1) EP2242107A4 (enExample)
JP (2) JP5693851B2 (enExample)
CN (2) CN101939843B (enExample)
WO (1) WO2009099182A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098539B (zh) 2009-09-07 2019-02-22 罗姆股份有限公司 半导体装置
KR101464846B1 (ko) * 2010-04-26 2014-11-25 미쓰비시덴키 가부시키가이샤 반도체 장치
US8674439B2 (en) 2010-08-02 2014-03-18 Microsemi Corporation Low loss SiC MOSFET
JP5002693B2 (ja) * 2010-09-06 2012-08-15 株式会社東芝 半導体装置
JP2012064873A (ja) * 2010-09-17 2012-03-29 Rohm Co Ltd 半導体装置およびその製造方法
JP5787655B2 (ja) * 2010-11-26 2015-09-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
CN102544091A (zh) * 2010-12-17 2012-07-04 浙江大学 新型碳化硅mosfet
JP5621621B2 (ja) 2011-01-24 2014-11-12 三菱電機株式会社 半導体装置と半導体装置の製造方法
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) * 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
JP5995435B2 (ja) * 2011-08-02 2016-09-21 ローム株式会社 半導体装置およびその製造方法
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
EP2754177A1 (en) 2011-09-11 2014-07-16 Cree, Inc. High current density power module comprising transistors with improved layout
JP2013179361A (ja) * 2013-06-13 2013-09-09 Mitsubishi Electric Corp 半導体装置
WO2014204491A1 (en) * 2013-06-21 2014-12-24 Microsemi Corporation Low loss sic mosfet
US10192958B2 (en) * 2014-06-24 2019-01-29 General Electric Company Cellular layout for semiconductor devices
JP6523887B2 (ja) * 2015-09-11 2019-06-05 株式会社東芝 半導体装置
JP6869376B2 (ja) * 2017-12-21 2021-05-12 三菱電機株式会社 半導体装置
US20210399128A1 (en) * 2020-06-19 2021-12-23 Cree, Inc. Power devices with a hybrid gate structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0696054A1 (en) * 1994-07-04 1996-02-07 STMicroelectronics S.r.l. Process for the manufacturing of high-density MOS-technology power devices
EP0772241A1 (en) * 1995-10-30 1997-05-07 STMicroelectronics S.r.l. High density MOS technology power device
US6049104A (en) * 1997-11-28 2000-04-11 Magepower Semiconductor Corp. MOSFET device to reduce gate-width without increasing JFET resistance
US6639273B1 (en) * 1998-09-01 2003-10-28 Fuji Electric Co., Ltd. Silicon carbide n channel MOS semiconductor device and method for manufacturing the same
CN1777982A (zh) * 2003-04-24 2006-05-24 克里公司 具有自对准的源区和阱区的碳化硅功率器件及其制备方法
CN101114593A (zh) * 2006-07-28 2008-01-30 财团法人电力中央研究所 提高SiC晶体质量的方法和SiC半导体器件

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JPS61283169A (ja) * 1985-06-10 1986-12-13 Tdk Corp 縦形電界効果トランジスタおよびその製造方法
JPH03192772A (ja) * 1989-12-21 1991-08-22 Nec Corp 電界効果トランジスタ
JP3471823B2 (ja) * 1992-01-16 2003-12-02 富士電機株式会社 絶縁ゲート型半導体装置およびその製造方法
JP3279151B2 (ja) * 1995-10-23 2002-04-30 トヨタ自動車株式会社 半導体装置及びその製造方法
JP3240896B2 (ja) * 1995-11-21 2001-12-25 富士電機株式会社 Ｍｏｓ型半導体素子
JP4123636B2 (ja) * 1998-06-22 2008-07-23 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP3524395B2 (ja) * 1998-09-02 2004-05-10 株式会社ルネサステクノロジ 半導体スイッチング素子
JP4696335B2 (ja) * 2000-05-30 2011-06-08 株式会社デンソー 半導体装置およびその製造方法
JP3997886B2 (ja) * 2002-10-22 2007-10-24 日産自動車株式会社 炭化珪素半導体装置の製造方法
JP4627211B2 (ja) * 2005-04-22 2011-02-09 三菱電機株式会社 炭化珪素半導体装置、及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0696054A1 (en) * 1994-07-04 1996-02-07 STMicroelectronics S.r.l. Process for the manufacturing of high-density MOS-technology power devices
EP0772241A1 (en) * 1995-10-30 1997-05-07 STMicroelectronics S.r.l. High density MOS technology power device
US6049104A (en) * 1997-11-28 2000-04-11 Magepower Semiconductor Corp. MOSFET device to reduce gate-width without increasing JFET resistance
US6639273B1 (en) * 1998-09-01 2003-10-28 Fuji Electric Co., Ltd. Silicon carbide n channel MOS semiconductor device and method for manufacturing the same
CN1777982A (zh) * 2003-04-24 2006-05-24 克里公司 具有自对准的源区和阱区的碳化硅功率器件及其制备方法
CN101114593A (zh) * 2006-07-28 2008-01-30 财团法人电力中央研究所 提高SiC晶体质量的方法和SiC半导体器件

Also Published As

Publication number Publication date
JPWO2009099182A1 (ja) 2011-05-26
JP2015109472A (ja) 2015-06-11
WO2009099182A1 (ja) 2009-08-13
JP6055498B2 (ja) 2016-12-27
US20110012132A1 (en) 2011-01-20
CN101939843B (zh) 2012-09-26
EP2242107A1 (en) 2010-10-20
CN101939843A (zh) 2011-01-05
JP5693851B2 (ja) 2015-04-01
CN102820338A (zh) 2012-12-12
EP2242107A4 (en) 2012-04-25

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