CN101886266A - 蚀刻剂和使用蚀刻剂制造阵列基板的方法 - Google Patents
蚀刻剂和使用蚀刻剂制造阵列基板的方法 Download PDFInfo
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- CN101886266A CN101886266A CN2010101835344A CN201010183534A CN101886266A CN 101886266 A CN101886266 A CN 101886266A CN 2010101835344 A CN2010101835344 A CN 2010101835344A CN 201010183534 A CN201010183534 A CN 201010183534A CN 101886266 A CN101886266 A CN 101886266A
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- 238000005530 etching Methods 0.000 title claims abstract description 99
- 239000003153 chemical reaction reagent Substances 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 35
- 239000004160 Ammonium persulphate Substances 0.000 claims abstract description 29
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 235000019395 ammonium persulphate Nutrition 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910001868 water Inorganic materials 0.000 claims abstract description 24
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims abstract description 21
- 239000002253 acid Substances 0.000 claims abstract description 21
- 229910052500 inorganic mineral Inorganic materials 0.000 claims abstract description 21
- 239000011707 mineral Substances 0.000 claims abstract description 21
- 150000003851 azoles Chemical class 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 37
- 229910052802 copper Inorganic materials 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000010936 titanium Substances 0.000 claims description 31
- 235000010755 mineral Nutrition 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 13
- 239000005695 Ammonium acetate Substances 0.000 claims description 13
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 13
- 235000019257 ammonium acetate Nutrition 0.000 claims description 13
- 229940043376 ammonium acetate Drugs 0.000 claims description 13
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims description 13
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 10
- -1 potassium tetrafluoroborate Chemical compound 0.000 claims description 10
- 239000011734 sodium Substances 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- GDTSJMKGXGJFGQ-UHFFFAOYSA-N 3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound O1B([O-])OB2OB([O-])OB1O2 GDTSJMKGXGJFGQ-UHFFFAOYSA-N 0.000 claims description 3
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 3
- 229910013063 LiBF 4 Inorganic materials 0.000 claims description 3
- 229910020808 NaBF Inorganic materials 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 3
- 239000012964 benzotriazole Substances 0.000 claims description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- 150000002460 imidazoles Chemical class 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 claims description 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 235000011056 potassium acetate Nutrition 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 3
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 claims description 3
- 150000003217 pyrazoles Chemical class 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 3
- 229910001495 sodium tetrafluoroborate Inorganic materials 0.000 claims description 3
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 claims description 3
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007323 disproportionation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
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- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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Abstract
Description
蚀刻Cu的终点(s) | 蚀刻Ti的终点(s) | CD斜度(μm) | 锥角(°) | |
实施例1 | 26 | 6 | 0.352 | 40 |
实施例2 | 23 | 8 | 0.237 | 40 |
实施例3 | 24 | 6 | 0.393 | 60 |
实施例4 | 20 | 6 | 0.384 | 55 |
实施例5 | 32 | 8 | 0.384 | 45 |
实施例6 | 23 | 15 | 0.492 | 35 |
实施例7 | 23 | 10 | 0.419 | 60 |
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0042173 | 2009-05-14 | ||
KR1020090042173A KR101619380B1 (ko) | 2009-05-14 | 2009-05-14 | 식각액 조성물 및 이를 이용한 어레이 기판의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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CN101886266A true CN101886266A (zh) | 2010-11-17 |
CN101886266B CN101886266B (zh) | 2014-08-20 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201010183534.4A Active CN101886266B (zh) | 2009-05-14 | 2010-05-14 | 蚀刻剂和使用蚀刻剂制造阵列基板的方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8262928B2 (zh) |
JP (1) | JP2010265547A (zh) |
KR (1) | KR101619380B1 (zh) |
CN (1) | CN101886266B (zh) |
TW (1) | TWI480424B (zh) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102965114A (zh) * | 2011-08-29 | 2013-03-13 | 日本爱纳克株式会社 | 含氢氟酸处理液的再生方法和再生装置 |
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Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040082859A1 (en) | 2002-07-01 | 2004-04-29 | Alan Schaer | Method and apparatus employing ultrasound energy to treat body sphincters |
US20080224092A1 (en) * | 2007-03-15 | 2008-09-18 | Samsung Electronics Co., Ltd. | Etchant for metal |
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EP2995350B1 (en) | 2009-10-30 | 2016-08-03 | ReCor Medical, Inc. | Apparatus for treatment of hypertension through percutaneous ultrasound renal denervation |
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KR101770754B1 (ko) * | 2011-06-21 | 2017-08-24 | 주식회사 동진쎄미켐 | 금속 배선 식각액 및 이를 이용한 액정 표시 장치의 제조 방법 |
KR101776923B1 (ko) * | 2011-08-05 | 2017-09-11 | 삼성디스플레이 주식회사 | 식각액 조성물, 이를 이용한 금속 패턴의 형성 방법 및 표시 기판의 제조 방법 |
KR102009250B1 (ko) * | 2011-09-09 | 2019-08-12 | 동우 화인켐 주식회사 | 표시장치의 제조방법 및 이에 이용되는 구리계 금속막/금속 산화물막의 식각액 조성물 |
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KR101320421B1 (ko) * | 2011-12-23 | 2013-10-23 | 솔브레인 주식회사 | 식각용액 및 이를 이용한 절연막의 패턴 형성방법 |
KR20130081492A (ko) * | 2012-01-09 | 2013-07-17 | 삼성디스플레이 주식회사 | 금속 패턴의 형성 방법 및 표시 기판의 제조 방법 |
KR101922625B1 (ko) * | 2012-07-03 | 2018-11-28 | 삼성디스플레이 주식회사 | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 |
KR20140013310A (ko) | 2012-07-23 | 2014-02-05 | 삼성디스플레이 주식회사 | 식각액 조성물, 및 이를 이용한 금속 배선과 박막 트랜지스터 표시판 제조 방법 |
KR102002131B1 (ko) | 2012-08-03 | 2019-07-22 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 박막 트랜지스터 제조 방법 |
KR20140065616A (ko) * | 2012-11-19 | 2014-05-30 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
WO2014159273A1 (en) * | 2013-03-14 | 2014-10-02 | Recor Medical, Inc. | Methods of plating or coating ultrasound transducers |
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US9771550B2 (en) * | 2013-12-11 | 2017-09-26 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
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KR102260189B1 (ko) | 2015-03-05 | 2021-06-03 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
KR102260190B1 (ko) | 2015-03-05 | 2021-06-03 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
KR101866615B1 (ko) * | 2015-03-20 | 2018-06-11 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조 방법 |
KR102468320B1 (ko) | 2015-08-04 | 2022-11-18 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 |
JP2017139295A (ja) | 2016-02-02 | 2017-08-10 | 東芝メモリ株式会社 | 基板処理装置、基板処理方法、および基板処理液 |
KR20180090009A (ko) | 2017-02-02 | 2018-08-10 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 박막 트랜지스터 어레이 기판의 제조방법 |
KR102368382B1 (ko) | 2017-03-10 | 2022-02-28 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법 |
KR101906767B1 (ko) * | 2018-04-12 | 2018-10-10 | 서울대학교산학협력단 | 구리 기반 전도성 페이스트 및 그 제조방법 |
CN208141792U (zh) * | 2018-05-28 | 2018-11-23 | 北京京东方技术开发有限公司 | 移位寄存器单元、电路结构、驱动电路及显示装置 |
CA3074198A1 (en) * | 2020-02-28 | 2021-08-28 | Fluid Energy Group Ltd. | Modified methanesulfonic acid and uses thereof |
CA3110357A1 (en) * | 2021-02-25 | 2022-08-25 | Sixring Inc. | Modified sulfuric acid and uses thereof |
CA3110389A1 (en) * | 2021-02-25 | 2022-08-25 | Sixring Inc. | Modified sulfuric acid and uses thereof |
CA3110364A1 (en) * | 2021-02-25 | 2022-08-25 | Sixring Inc. | Modified sulfuric acid and uses thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1510169A (zh) * | 2002-12-12 | 2004-07-07 | Lg.菲利浦Lcd株式会社 | 用于多层铜和钼的蚀刻溶液及使用该蚀刻溶液的蚀刻方法 |
US20060046490A1 (en) * | 2003-10-23 | 2006-03-02 | Gautam Banerjee | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
CN101192627A (zh) * | 2006-11-23 | 2008-06-04 | 李毅 | 一种硅薄膜光电池的电极图案及蚀刻方法 |
US20080254628A1 (en) * | 2005-08-05 | 2008-10-16 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9425031D0 (en) * | 1994-12-09 | 1995-02-08 | Alpha Metals Ltd | Printed circuit board manufacture |
US6284309B1 (en) * | 1997-12-19 | 2001-09-04 | Atotech Deutschland Gmbh | Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom |
MY139405A (en) * | 1998-09-28 | 2009-09-30 | Ibiden Co Ltd | Printed circuit board and method for its production |
US6086779A (en) * | 1999-03-01 | 2000-07-11 | Mcgean-Rohco, Inc. | Copper etching compositions and method for etching copper |
US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
US20080224092A1 (en) * | 2007-03-15 | 2008-09-18 | Samsung Electronics Co., Ltd. | Etchant for metal |
KR101310310B1 (ko) * | 2007-03-15 | 2013-09-23 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각액 조성물 |
US8025812B2 (en) * | 2007-04-27 | 2011-09-27 | International Business Machines Corporation | Selective etch of TiW for capture pad formation |
-
2009
- 2009-05-14 KR KR1020090042173A patent/KR101619380B1/ko active IP Right Grant
-
2010
- 2010-05-11 US US12/777,532 patent/US8262928B2/en active Active
- 2010-05-13 JP JP2010110960A patent/JP2010265547A/ja not_active Withdrawn
- 2010-05-13 TW TW099115286A patent/TWI480424B/zh active
- 2010-05-14 CN CN201010183534.4A patent/CN101886266B/zh active Active
-
2012
- 2012-08-03 US US13/566,239 patent/US8354288B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1510169A (zh) * | 2002-12-12 | 2004-07-07 | Lg.菲利浦Lcd株式会社 | 用于多层铜和钼的蚀刻溶液及使用该蚀刻溶液的蚀刻方法 |
US20060046490A1 (en) * | 2003-10-23 | 2006-03-02 | Gautam Banerjee | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
US20080254628A1 (en) * | 2005-08-05 | 2008-10-16 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
CN101192627A (zh) * | 2006-11-23 | 2008-06-04 | 李毅 | 一种硅薄膜光电池的电极图案及蚀刻方法 |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102977889A (zh) * | 2011-09-02 | 2013-03-20 | 东友精细化工有限公司 | 含镓的金属氧化物层的蚀刻溶液组合物 |
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Also Published As
Publication number | Publication date |
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JP2010265547A (ja) | 2010-11-25 |
US20100291722A1 (en) | 2010-11-18 |
KR20100123131A (ko) | 2010-11-24 |
TW201042086A (en) | 2010-12-01 |
TWI480424B (zh) | 2015-04-11 |
US8354288B2 (en) | 2013-01-15 |
CN101886266B (zh) | 2014-08-20 |
US20120295380A1 (en) | 2012-11-22 |
KR101619380B1 (ko) | 2016-05-11 |
US8262928B2 (en) | 2012-09-11 |
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