CN108220963B - 多层膜用蚀刻液组合物、蚀刻方法及阵列基板的制造方法 - Google Patents
多层膜用蚀刻液组合物、蚀刻方法及阵列基板的制造方法 Download PDFInfo
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- CN108220963B CN108220963B CN201711286762.2A CN201711286762A CN108220963B CN 108220963 B CN108220963 B CN 108220963B CN 201711286762 A CN201711286762 A CN 201711286762A CN 108220963 B CN108220963 B CN 108220963B
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- acid
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- etching solution
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- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims abstract description 13
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
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- 239000010936 titanium Substances 0.000 claims description 14
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- 239000011698 potassium fluoride Substances 0.000 claims description 3
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
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- 159000000000 sodium salts Chemical class 0.000 claims description 2
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- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 4
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- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 2
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- C—CHEMISTRY; METALLURGY
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- C—CHEMISTRY; METALLURGY
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
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- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
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- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
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- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract
本发明提供多层膜用蚀刻液组合物、蚀刻方法及阵列基板的制造方法。该多层膜用蚀刻液组合物,包含:A)过硫酸盐0.5重量%~20.0重量%;B)氟化合物0.01重量%~2.0重量%;C)无机酸10.0重量%~15.0重量%;D)有机酸10.0~30.0重量%;E)有机酸盐0.1重量%~10.0重量%;F)环状胺化合物0.1重量%~5.0重量%;G)氨基磺酸0.1重量%~6.0重量%;H)甘氨酸0.1重量%~5.0重量%;和I)余量的水。根据本发明的多层膜用蚀刻液组合物,能够缩短整体工序时间且降低成本。
Description
技术领域
本发明涉及多层膜用蚀刻液组合物、利用该多层膜用蚀刻液组合物的蚀刻方法、及利用该蚀刻方法的显示装置用阵列基板的制造方法。
背景技术
液晶显示元件(liquid crystal display device,LCD device)由于因优异的分辨率而提供清晰的影像、耗电少、能够较薄地制造显示器画面的特性而在平板显示装置中受到格外关注。近年来,作为驱动这样的液晶等中所使用的显示元件的电路,代表性的是薄膜晶体管(thin film transistor,TFT)电路,典型的薄膜晶体管液晶显示(TFT-LCD)元件构成显示画面的像素(pixel)。TFT-LCD元件中,用作开关元件的TFT通过在以矩阵形态排列的TFT用基板和相对于该基板的滤色器基板之间填充液晶物质而制造。TFT-LCD的整体制造工序大体分为TFT基板制造工序、滤色器工序、液晶盒工序、模块工序,在显示精确且清晰的影像方面,TFT基板和滤色器制造工序的重要性最大。
如果想要实现像素显示电极中所期望的电路的线路,则需要按照电路图案来刮削薄膜层的蚀刻(etching)工序。
但是,以往的蚀刻液组合物虽然对于主要将主配线蒸镀(depositon)于阻挡(Barrier)膜质而制造的双层膜能够一并蚀刻,但对于金属种类稍多且较多层地蒸镀的配线不易通过湿式蚀刻工序进行一并蚀刻。具体而言,四层膜的情况下,对于全部四层膜均应当维持相同的蚀刻量,但由于与四层膜对应的各个膜的蚀刻速度均不同,因此发生由于各个膜不同的蚀刻速度而导致无法被均匀蚀刻的问题。
另一方面,韩国公开专利第10-2015-0089887号公开了作为主氧化剂使用过硫酸盐而未使用过氧化氢进行钛-铜双层膜蚀刻的蚀刻液组合物,但利用上述公开专利的组合物对于三层膜以上的蒸镀为多层的配线进行湿式蚀刻工序的情况下,存在一并蚀刻效果降低的问题,为了解决该问题,实际情况是需要能够蚀刻多层膜的改善的蚀刻液组合物。
现有技术文献
专利文献
专利文献1:韩国公开专利10-2015-0089887号
发明内容
所要解决的课题
本发明的目的在于,通过提供能够利用一种化学试剂将包含用作显示装置用阵列基板的像素电极的铟氧化膜的多层膜等为了今后的多功能化而由多种金属和多层膜形成的配线一并蚀刻的蚀刻液,从而提供能够缩短整体工序时间且降低成本的提高薄膜晶体管-显示元件的驱动特性的多层膜蚀刻液组合物、利用该多层膜蚀刻液组合物的蚀刻方法、及利用该蚀刻方法的显示装置用阵列基板的制造方法。
解决课题的方法
为了实现上述目的,本发明提供一种多层膜用蚀刻液组合物,包含:A)过硫酸盐约0.5重量%~约20.0重量%;B)氟化合物约0.01重量%~约2.0重量%;C)无机酸约10.0重量%~约15.0重量%;D)有机酸约10.0~约30.0重量%;E)有机酸盐约0.1重量%~10.0重量%;F)环状胺化合物约0.1重量%~约5.0重量%;G)氨基磺酸约0.1重量%~约6.0重量%;H)甘氨酸约0.1重量%~约5.0重量%;和I)余量的水。
本发明提供多层膜蚀刻方法,包括:(1)在基板上形成多层膜的步骤;(2)在上述多层膜上选择性地留下光反应物质的步骤;及(3)使用上述多层膜用蚀刻液组合物蚀刻上述多层膜的步骤。
本发明提供显示装置用阵列基板的制造方法,其特征在于,包括:(1)在基板上形成栅极配线的步骤;(2)在包含上述栅极配线的基板上形成栅极绝缘层的步骤;(3)在上述栅极绝缘层上形成氧化物半导体层的步骤;(4)在上述氧化物半导体层上形成源电极和漏电极的步骤;及(5)形成与上述漏电极连接的像素电极的步骤,上述(5)步骤包括形成多层膜、且利用蚀刻液组合物蚀刻上述多层膜而形成像素电极的步骤,上述蚀刻液组合物为本发明的多层膜蚀刻液组合物。
发明效果
本发明通过提供能够在没有其他工序或其他蚀刻液的帮助下仅利用本申请发明的蚀刻液组合物将为了今后的多功能化而由多种金属和多层膜形成的配线一并蚀刻的蚀刻液,从而提供能够缩短整体工序时间且降低成本的多层膜用蚀刻液组合物。
本发明在没有其他工序或其他蚀刻液的帮助下仅利用本申请发明的蚀刻液组合物不仅能够将由钛/铜或钛/铜/钛构成的双层膜、三层膜一并蚀刻,还能够将由钛/铟氧化膜/铝/铟氧化膜构成的四层膜一并蚀刻。
附图说明
图1是与多层膜蚀刻实验结果有关的附图。
具体实施方式
本发明涉及针对多层膜的蚀刻液组合物及利用该蚀刻液组合物的蚀刻方法,其目的在于,提供在包含A)过硫酸盐、B)氟化合物、C)无机酸、D)有机酸、E)有机酸盐、F)环状胺化合物、G)氨基磺酸、H)甘氨酸的情况下,能够利用湿式蚀刻方式将多层膜一并蚀刻,缩短整体工序时间,使效率达到最大化,而且能够降低成本,提高薄膜晶体管-显示元件的驱动特性的多层膜蚀刻液组合物、利用该多层膜蚀刻液组合物的蚀刻方法及利用该蚀刻方法的显示装置用阵列基板的制造方法。
本发明的多层膜的意思是三层膜以上的多层膜,可以为三层膜、四层膜、五层膜或六层膜。优选上述多层膜可以为四层膜,更具体而言,可以为含有一层以上包含钛、铟氧化膜和银中的一种以上的膜。作为本发明的多层膜的例子,可以举出由钛/铟氧化膜/银/铟氧化膜等形成的四层膜,但不限于此。
本发明的铟氧化膜可以举出氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铟锡锌(ITZO)或氧化铟镓锌(IGZO)等,但不限定于此。
以下,更详细地说明本发明。
A)过硫酸盐
本发明的过硫酸盐发挥对于金属膜的氧化剂的作用。
相对于组合物总重量,本发明的过硫酸盐的含量可以为约0.5重量%~约20重量%,优选为5.0重量%~12.0重量%。如果上述过硫酸盐的含量低于上述范围,则蚀刻速率降低而无法实现充分的蚀刻。如果上述过硫酸盐的含量超过上述范围,则因蚀刻速率过快而难以控制蚀刻程度,因此金属膜可能被过蚀刻(overetching)。
上述过硫酸盐例如可以包含选自由过硫酸钾(K2S2O8)、过硫酸钠(Na2S2O8)和/或过硫酸铵((NH4)2S2O8)等组成的组中的一种以上,但不限于此。
B)氟化合物
上述氟化合物蚀刻多层膜所包含的钛膜等,并且去除因上述蚀刻而可能产生的残渣。
相对于上述蚀刻液组合物总重量,上述氟化合物的含量可以为约0.01重量%~约2.0重量%,优选可以为0.1重量%~1.0重量%。如果上述氟化合物的含量低于上述范围,则难以进行钛的蚀刻,残渣产生频率增大,如果超过上述范围,则可能会对所层叠的玻璃基板造成损伤。
上述氟化合物可以包含选自由例如氟化铵(ammonium fluoride)、氟化钠(sodiumfluoride)、氟化钾(potassium fluoride)、氟化氢铵(ammonium bifluoride)、氟化氢钠(sodium bifluoride)和/或氟化氢钾(potassium bifluoride)等组成的组中的一种以上,但不限于此。
C)无机酸
上述无机酸是助氧化剂。可以根据上述无机酸在上述蚀刻液组合物中的含量来控制蚀刻速度。上述无机酸可以与上述蚀刻液组合物中的Cu和/或Al离子发生反应,由此阻止上述Cu和/或Al离子的增加而防止蚀刻速率降低。
相对于上述蚀刻液组合物总重量,上述无机酸的含量可以为约10.0~约15.0重量%。如果上述无机酸的含量低于上述范围,则蚀刻速率降低而无法达到充分的蚀刻速度,如果超过上述范围,则会使金属膜蚀刻时所使用的感光膜产生裂纹(crack)或使上述感光膜剥落。上述感光膜产生上述裂纹或上述感光膜剥落的情况下,位于感光膜的下部的金属膜会被过度蚀刻。
上述无机酸可以包含选自由硝酸、硫酸和/或高氯酸等组成的组中的一种以上,但不限于此。
D)有机酸
上述有机酸随着其在上述蚀刻液中的含量增加而提高所有金属膜的蚀刻速度。相对于蚀刻液组合物总重量,上述有机酸的含量可以为约10.0~约30.0重量%,优选为约15.0重量%~约30.0重量%。如果有机酸的含量低于上述范围,则蚀刻速度降低,如果有机酸的含量超过上述范围,则蚀刻速度加快,会引发锥角(Taper Angle)大于所期望的锥角的问题。
上述有机酸可以包含选自由酒石酸(Tartaric Acid)、乙酸(acetic acid)、丁酸(butanoic acid)、柠檬酸(citric acid)、甲酸(formic acid)、葡糖酸(gluconic acid)、乙醇酸(glycolic acid)、丙二酸(malonic acid)、戊酸(pentanoic acid)和/或草酸(oxalic acid)等组成的组中的一种以上,但不限于此。
E)有机酸盐
有机酸盐随着其在上述蚀刻液中的含量增加而降低蚀刻速度。尤其,通过发挥螯合剂的作用而与上述蚀刻液组合物中的金属离子形成络合物,从而调节金属的蚀刻速度。相对于蚀刻液组合物总重量,上述有机酸盐的含量为约0.1重量%~10.0重量%,优选为0.5重量%~5.0重量%。如果上述有机酸盐的含量低于上述范围,则不易调节铜的蚀刻速度而可能引发过蚀刻,如果超过上述范围,则铜的蚀刻速度降低而工序上蚀刻时间变长。因此,想要处理的基板的张数减少。
上述有机酸盐优选选自由如下酸的钾盐、钠盐和铵盐组成的组,更优选包含乙酸钾、乙酸钠、乙酸铵中的一种以上,但不限于此,所述酸优选选自由酒石酸(TartaricAcid)、乙酸(acetic acid)、丁酸(butanoic acid)、柠檬酸(citric acid)、甲酸(formicacid)、葡糖酸(gluconic acid)、乙醇酸(glycolic acid)、丙二酸(malonic acid)、戊酸(pentanoic acid)和/或草酸(oxalic acid)等组成的组。
F)环状胺化合物
环状胺化合物可以用作防腐蚀剂。相对于蚀刻液组合物总重量,上述环状胺化合物的含量为约0.1重量%~约5.0重量%,优选为0.3重量%~3.0重量%。如果上述环状胺化合物的含量低于上述范围,则金属膜的蚀刻速率变高而存在过蚀刻的危险,如果超过上述范围,则金属膜的蚀刻速率降低而无法实现期望的程度的蚀刻。
上述环状胺化合物可以包含例如5-氨基四唑(5-aminotetrazole)、咪唑(imidazole)、吲哚(indole)、嘌呤(purine)、吡唑(pyrazole)、吡啶(pyridine)、嘧啶(pyrimidine)、吡咯(pyrrole)、吡咯烷(pyrrolidine)和/或吡咯啉(pyrroline)。此外,上述环状胺化合物可以包含它们中的两种以上的混合物。
G)氨基磺酸(Sulfamic acid)
氨基磺酸作为经时变化防止用添加剂而发挥作用,尤其发挥维持最初期望的锥角(Taper Angle)的作用。相对于蚀刻液组合物总重量,上述氨基磺酸的含量为约0.1重量%~约6.0重量%,优选含量为1.0重量%~5.0重量%。如果上述氨基磺酸的含量约低于上述范围,则无法挥发维持蚀刻形状的作用而化学周期的更换周期变短,如果高于上述范围,则蚀刻速度变得过快而工序上受到较多制约。
H)甘氨酸(Glycine)
甘氨酸发挥对于金属膜的防腐蚀剂和维持最初期望的侧蚀(Side Etch)量的作用。由于成分本身没有经时变化,且容易将在化学试剂中溶出的金属离子螯合,因此也发挥使化学试剂稳定化的作用。相对于蚀刻液组合物总重量,上述甘氨酸的含量为约0.1重量%~约5.0重量%。如果上述甘氨酸的含量低于约0.1重量%,则对于在金属膜中溶出的金属离子的螯合效果减小,化学试剂稳定性降低,如果高于5.0重量%,则对于金属膜的蚀刻速度降低而工序时间变长。优选为0.1重量%~3.0重量%。
本发明中所使用的A)过硫酸盐、B)氟化合物、C)无机酸、D)有机酸、E)有机酸盐、F)环状胺化合物、G)氨基磺酸、H)甘氨酸等可以利用通常公知的方法来制造,本发明的蚀刻液组合物优选具有用于半导体工序的纯度。
此外,本发明提供多层膜蚀刻方法,包括:(1)在基板上形成多层膜的步骤;(2)在上述多层膜上选择性地留下光反应物质的步骤;及(3)使用本发明的蚀刻液组合物进行上述蚀刻的步骤。
此外,本发明提供显示装置用阵列基板的制造方法,其特征在于,包括:(1)在基板上形成栅极配线的步骤;(2)在包含上述栅极配线的基板上形成栅极绝缘层的步骤;(3)在上述栅极绝缘层上形成氧化物半导体层的步骤;(4)在上述氧化物半导体层上形成源电极和漏电极的步骤;及(5)形成与上述漏电极连接的像素电极的步骤,上述(5)步骤包括形成多层膜、且利用蚀刻液组合物蚀刻上述多层膜而形成像素电极的步骤,上述蚀刻液组合物为上述本发明的蚀刻液组合物。
本发明的多层膜蚀刻液组合物的特征在于,不仅能够蚀刻双层膜,而且能够蚀刻三层膜以上且六层膜以下的多层膜,上述多层膜中,四层膜为由钛/铟氧化膜/铝/铟氧化膜形成的四层膜,但并不限于此。
本发明中,上述铟氧化膜可以为选自由氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铟锡锌(ITZO)和氧化铟镓锌(IGZO)等组成的组中的一种以上,但不限定于此。
针对上述本发明的蚀刻液组合物的说明,在上述多层膜蚀刻方法及显示装置用阵列基板的制造方法中同样适用。
<蚀刻液组合物制造>
根据下述表1中示出的组成制造实施例1~实施例3和比较例1~比较例8的各自的蚀刻液组合物10㎏,且包含余量的水以使蚀刻液组合物总重量成为100重量%。
[表1]
(重量%)
(注)APS:过硫酸按(Ammonium persulfate);AF:氟化铰(Ammonium fluoride);
ATZ:5-氨基四唑(5-aminotetrazole);AcOH:乙酸(Acetic acid);
A.A:乙酸按(Ammonium Acetate);S.A:氨基磺酸(Sulfamic Acid);
实验例1:多层膜蚀刻评价
将各化学试剂维持在30℃后,按照各组成进行用于确认是否能够进行针对四层膜的一并蚀刻。蚀刻机(Etcher)使用0.5代能够处理玻璃尺寸(Glass Size)的设备(MiniEtching Station,AST公司),化学试剂喷射为喷雾型(Spray Type),喷雾(Spray)压力为0.1MPa。蚀刻区域(Etching zone)的排气压力维持20Pa。蚀刻温度为30℃,关于蚀刻时间,以下部膜Ti完成蚀刻的时间为基准,按照60%进行过蚀刻(OverEtch=60%)。为了实验而准备的四层膜基板结构是从下部开始按照钛(Ti)/铟氧化膜(IZO)/铝(Al)/铟氧化膜(IZO)顺序蒸镀而成的四层膜。
[表2]
单位:μm
以铝为基准测定对于各蚀刻量的差异(高低差)。如果以铝为中心Ti、下部IZO、下部IZO的蚀刻量相同,则高低差全部成为“0”而实现理想的一并蚀刻,以此为基准,在上述实验中尤其下部IZO和上部IZO显示出0.1μm以内的高低差的情况下,判断为能够一并蚀刻。表2中记载的内容是按照不同组成蚀刻4层膜后通过SEM测定获得的结果值。在实施例1~3的情况下,作为主层的铝膜与以其为中心在上、下部蒸镀的铟氧化膜(IZO)的蚀刻差异为0.1μm以内,非常细微,显示出能够一并蚀刻。另一方面,在比较例1~5的情况下,铝与铟氧化膜的蚀刻速度不同,以铝膜为中心位于上、下部的铟氧化膜所残留的残渣量大。通常大于0.1μm的情况下,会在后续工序中成为配线的断线或短路的原因,因此比较例1~8的组成在工序上无法应用。
Claims (9)
1.一种多层膜用蚀刻液组合物,包含:
A)过硫酸盐0.5重量%~20.0重量%;
B)氟化合物0.01重量%~2.0重量%;
C)无机酸10.0重量%~15.0重量%;
D)有机酸10.0~30.0重量%;
E)有机酸盐0.1重量%~10.0重量%;
F)环状胺化合物0.1重量%~5.0重量%;
G)氨基磺酸0.1重量%~6.0重量%;
H)甘氨酸0.1重量%~5.0重量%;和
I)余量的水,
所述环状胺化合物为5-氨基四唑,
所述多层膜为由钛/铟氧化膜/铝/铟氧化膜形成的四层膜。
2.根据权利要求1所述的多层膜用蚀刻液组合物,所述过硫酸盐包含选自由过硫酸钾(K2S2O8)、过硫酸钠(Na2S2O8)和过硫酸铵((NH4)2S2O8)组成的组中的一种以上。
3.根据权利要求1所述的多层膜用蚀刻液组合物,所述氟化合物包含选自由氟化铵、氟化钠、氟化钾、氟化氢铵、氟化氢钠和氟化氢钾组成的组中的一种以上。
4.根据权利要求1所述的多层膜用蚀刻液组合物,所述无机酸包含选自由硝酸、硫酸和高氯酸组成的组中的一种以上。
5.根据权利要求1所述的多层膜用蚀刻液组合物,所述有机酸包含选自由酒石酸、乙酸、丁酸、柠檬酸、甲酸、葡糖酸、乙醇酸、丙二酸、戊酸和草酸组成的组中的一种以上。
6.根据权利要求1所述的多层膜用蚀刻液组合物,所述有机酸盐包含选自由如下酸的钾盐、钠盐和铵盐组成的组中的一种以上,所述酸选自由酒石酸、乙酸、丁酸、柠檬酸、甲酸、葡糖酸、乙醇酸、丙二酸、戊酸和草酸组成的组。
7.根据权利要求1所述的多层膜用蚀刻液组合物,所述铟氧化膜为选自由氧化铟锡、氧化铟锌、氧化铟锡锌和氧化铟镓锌组成的组中的一种以上。
8.一种多层膜蚀刻方法,包括:
(1)在基板上形成多层膜的步骤;
(2)在所述多层膜上选择性地留下光反应物质的步骤;及
(3)使用权利要求1~7中任一项所述的多层膜用蚀刻液组合物蚀刻所述多层膜的步骤。
9.一种显示装置用阵列基板的制造方法,其特征在于,包括:
(1)在基板上形成栅极配线的步骤;
(2)在包含所述栅极配线的基板上形成栅极绝缘层的步骤;
(3)在所述栅极绝缘层上形成氧化物半导体层的步骤;
(4)在所述氧化物半导体层上形成源电极和漏电极的步骤;及
(5)形成与所述漏电极连接的像素电极的步骤,
所述(5)步骤包括形成多层膜、且利用蚀刻液组合物蚀刻所述多层膜而形成像素电极的步骤,
所述蚀刻液组合物为权利要求1~7中任一项所述的多层膜用蚀刻液组合物。
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