CN101874307A - 通过表面粗糙化的高光提取效率的基于氮化物的发光二极管 - Google Patents
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Abstract
本发明揭示一种III-氮化物发光二极管(LED)及其制造方法,其中纹理化所述LED的III-氮化物层的半极性或非极性平面的至少一个表面,借此形成经纹理化表面以增加光提取。可通过等离子辅助化学蚀刻、光刻之后进行蚀刻或纳米压印之后进行蚀刻来执行所述纹理化。
Description
相关申请案交叉参考
此申请案根据35U.S.C.章节119(e)的规定主张由钟宏(Hong Zhong)、啊奴瑞格泰基(Anurag Tyagi)、肯尼思J瓦姆波拉(Kenneth J.Vampola)、詹姆斯S斯班克(James S.Speck)、史蒂文P丹巴尔斯(Steven P.DenBaars)及中村修二(ShujiNakamura)于2007年11月30日申请的名称为“通过表面粗糙化的高光提取效率的基于氮化物的发光二极管(HIGH LIGHT EXTRACTION EFFICIENCY NITRIDEBASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING)”的同在申请中及已共同让与的美国临时专利申请案第60/991,617号(代理人档案号30794.258-US-P1(2008-277-1))的权利,此申请案以引用方式并入本文中。
技术领域
本发明涉及发光二极管(LED),且更特定来说涉及经由表面粗糙化的高光提取效率的基于氮化镓的LED。
背景技术
(注意:此申请案参考如在整篇说明书中由括号内的一个或一个以上参考编号(例如[x])指示的许多不同出版文献。可在下文名称为“参考文献”的章节中找到根据所述参考编号排序的所述不同出版文献列表。所述出版文献中的每一者均以引用方式并入本文中。)
基于氮化镓(GaN)的宽带隙半导体LED已使用了近15年。LED开发的进步已在LED技术中引起极大改变,实现全色LED显示器、LED交通信号、白色LED等等。
高效率白色LED已获得许多兴趣作为萤光灯的可能替代物-白色LED的发光效能(130-150流明/瓦特[1])已超过普通萤光灯的发光效能(75流明/瓦特)。然而,当前市售基于纤锌矿氮化物的LED的特征在于在多量子阱(MQW)内部存在用于其[0001]c极性生长定向的极化相关电场。在异质结面处的自发及压电极化两者的不连续性在量子阱中产生内部电场,此引起载流子分离(量子束缚史塔克效应(QCSE))并减小量子阱内的辐射复合速率[2到5]。
为减小所述极化相关效应,已证明在非极性平面(亦即,(1-100)m平面或(11-20)a平面)上生长Ⅲ-氮化物装置[6到7]。减小并可能消除所述效应的另一方法是在相对于c方向倾斜的晶体平面(亦即,半极性平面)上生长Ⅲ-氮化物装置。还已证明生长于不同半极性平面(包含(10-1-1)、(10-1-3)、(11-22)及其它)上的装置[8到10]。与c平面Ⅲ-氮化物材料相比较所述平面在异质结构中具有减小的极化不连续性;且对于离所述c平面~45度定向的半极性平面来说,在InGaN/GaN异质结构中不存在极化不连续性[5]。最近,随着高质量独立GaN衬底的出现,已报道在非极性m平面、半极性(10-1-1)及(11-22)独立GaN衬底上具有介于407nm与513nm之间的峰值发射波长的高效能非极性及半极性LED。所述LED的效能显着部分概括于表1中[11到15]。所述装置显示量子阱中极大减小的极化相关电场,此使得一个人能够在LED内部采用较厚量子阱,相信此对于在高电流下操作的装置来说至关重要。因此,生长于非极性及半极性定向的GaN衬底上的LED承载着商业上有用的固态照明应用的极大希望且随着高质量独立GaN衬底变得更可用而为商业可行。
表1:对最近报道的半极性及非极性LED的效能的概括。
峰值发射波长 | 晶体定向 | 在20mA驱动电流下的输出功率 | 在20mA驱动电流下的外部量子效率 |
407nm(蓝紫色)、411nm(蓝紫色) | 非极性m平面、半极性(10-1-1)平面 | 23.7mW、20.58mW | 38.9%、33.9% |
444nm(蓝色) | 半极性(10-1-1)平面 | 16.21mW(在脉冲式操作下,10%工作循环) | 29%在脉冲式操作下,10%工作循环) |
489nm(蓝绿色) | 半极性(11-22)平面 | 9mW(在脉冲式操作下,10%工作循环) | 18%在脉冲式操作下,10%工作循环) |
516nm(绿色) | 半极性(11-22)平面 | 5mW | 10.5% |
用以改进LED效率的当前技术归入两种不同类别:增加内部量子效率或提取效率。
增加由晶体质量及外延层结构所确定之内部量子效率可能相当困难。蓝色LED的典型内部量子效率值大于70%[16]且生长于低位错GaN衬底上的紫外线(UV)LED最近展示出高达80%的内部量子效率[17]。在所述值上可能存在很小改进空间,尤其对于生长于高质量独立GaN衬底上的非极性及半极性定向的装置也是如此。
另一方面,存在充分的光提取效率改进空间。对于裸芯片基于氮化物的LED来说,因GaN(n=2.5)与空气(n=1)之间相当巨大的折射率差,因此光逃逸锥的角度仅为23度,此导致低至4.18%的不足光提取效率[18]。所述逃逸锥外部的光在所述装置内部重复反射并最终由有源区或电极吸收。
可使用表面粗糙化程序来显着减小内部光损耗并促进光从所述装置逃逸。图1是经表面粗糙化的LED的示意性横截面图解说明,其包括n型电极10、n型Ⅲ-氮化物层11、Ⅲ-氮化物有源区12、p型Ⅲ-氮化物层13及经由金锡结合15结合至硅子安装座16的p型电极14。使用光增强型化学(PEC)蚀刻来粗糙化n型层11的背侧17,所述背侧是氮面(N面)GaN表面。箭头18指示由所述LED发射的光的可能轨迹。与光滑表面及其它方面相同的装置相比较,针对经表面粗糙化的LED测量到130%的输出功率增加[19]。
虽然通过PEC蚀刻进行表面粗糙化是用于改进从基于氮化物的LED的光提取的必要条件,但此技术的有效性大体上依赖于即将粗糙化表面的晶体定向及极性,尤其c极性[0001]GaN的氮面[21]。因此,PEC蚀刻可能不能应用于其它GaN晶体定向及极性的表面,包含a面(11-20)、非极性m面(1-100)及大多数半极性表面。缺少用于表面粗糙化的方法已变成非极性及半极性LED为实现较高提取效率的主要障碍,且因此需要较高总体效率且因此经改进粗糙化技术来解决此问题。
发明内容
本发明描述一种增加从基于氮化物的LED的光提取效率的方法,其涉及光刻及等离子辅助化学干式蚀刻。通过增加光提取,因此期盼后续效率改进。本发明的一个最值得注意的优点在于其显着增加从基于氮化物的LED(包含沿非极性及半极性定向生长的膜)的光提取效率。另外,与其它光提取增强技术(例如,使用光子晶体)相比较,此发明更直接。更重要的是,不同于也为简单光提取增强技术的光增强型化学蚀刻,本发明更通用,因为其可应用于任何氮化物半导体表面而不管其晶体结构如何。
因此,为克服上述现有技术中的限制,且为克服在阅读及理解本说明书时将变得显而易见的其它限制,本发明描述一种用于制造Ⅲ-氮化物LED的方法,其包括纹理化所述LED的Ⅲ-氮化物层的半极性或非极性平面的至少一个表面以形成经纹理化表面,其中通过等离子辅助化学蚀刻来执行所述纹理化步骤。可通过光刻之后进行所述蚀刻来执行所述纹理化步骤,或可使用纳米压印之后进行所述蚀刻来形成所述经纹理化表面。主要从所述经纹理化表面提取所述LED的有源区发射的光。
所述纹理化步骤可进一步包括:(1)形成带有至少一个侧壁的至少一个特征,所述至少一个侧壁反射并透射从所述特征内部入射的至少一个光射线;及使所述侧壁倾斜以使得每次反射所述射线时,所述射线相对于所述侧壁的表面法线的入射角减小,从而在所述射线的所述入射角小于临界角时,所述射线穿过所述侧壁的透射增加,且在所述射线的所述入射角至少等于所述临界角时,所述侧壁反射所述射线。
本发明进一步揭示一种用于从Ⅲ-氮化物LED发射光的方法,其包括从所述LED的Ⅲ-氮化物层的半极性或非极性平面的至少一个经纹理化表面发射所述光,其中通过等离子辅助化学蚀刻来执行所述纹理化。
本发明进一步揭示一种Ⅲ-氮化物LED,其包括n型Ⅲ-氮化物;p型Ⅲ-氮化物;发射光的Ⅲ-氮化物有源层,其形成于所述n型Ⅲ-氮化物与p型Ⅲ-氮化物之间;Ⅲ-氮化物光提取表面,其位于所述n型Ⅲ-氮化物上并与外部介质形成界面,其中所述Ⅲ-氮化物光提取表面具有带有至少一个倾斜侧壁的若干特征,所述至少一个倾斜侧壁在所述界面处将所述光透射到外部介质空气中并在所述界面处反射所述光,其中:(1)经反射的光在于所述特征内部经历若干后续反射之后具有增加的相对于所述界面的入射角且因此被透射到所述外部介质的机会增加,且(2)所述n型Ⅲ-氮化物、p型Ⅲ-氮化物及Ⅲ-氮化物有源层为半极性或非极性层。所述外部介质可以为折射率小于Ⅲ-氮化物的介质,例如空气或真空。
附图说明
现参考其中相同参考编号始终表示对应零件的图式:
图1是具有通过光增强型化学蚀刻粗糙化的背侧的(Al、Ga、In)N LED的示意性横截面。
图2是具有通过本发明粗糙化的背侧的呈悬挂时的几何形状的(Al、Ga、In)N LED的示意性横截面。
图3a是GaN表面在粗糙化之后的扫描电子显微镜(SEM)图像。
图3b是GaN表面在粗糙化之后的横截面SEM图像。
图4图解说明光从锥形特征逃逸的过程。
图5是GaN表面在粗糙化之后的光学显微镜图像。
图6图解说明锥形特征的几何形状。
图7是流程图,其图解说明用于制造高光提取效率LED结构的方法。
图8是半极性(11-22)GaN表面在通过光增强型化学蚀刻粗糙化之后的SEM图像。
图9是具有通过本发明粗糙化的背侧的呈倒装芯片设计的(Al、Ga、In)N LED的示意性横截面。
图10是具有通过本发明粗糙化的背侧及与成形氧化锌或透明导体结合的p型Ⅲ-氮化物层的呈倒装芯片设计的(Al、Ga、In)N LED的示意性横截面。
图11是图解说明本发明的方法的流程图。
具体实施方式
在对优选实施例的以下说明中,参考形成其一部分的随附图式,且其中以图解说明方式显示其中可实践本发明的具体实施例。应理解,可利用其它实施例并且可在不背离本发明的范围的情形下做出结构性改变。
技术说明
本发明描述一种用于增加从基于氮化物的LED的光提取效率的技术,其涉及光刻及等离子辅助化学干式蚀刻。通过增加光提取,因此期盼后续的效率改进。
在本发明的一个实施例中,粗糙化LED生长阵面的相对侧的独立GaN衬底表面。在制造所述装置之后,接着将所述LED置于成形的光学元件内。
图2显示根据本发明优选实施例的以悬挂时的几何形状封装的经表面粗糙化的LED的图示。所述LED由如下部分组成:p型金属电极20、半透明p型电极21、p型Ⅲ-氮化物层22、Ⅲ-氮化物有源区23、n型Ⅲ-氮化物层24、其上通过等离子辅助化学蚀刻来执行表面粗糙化的经双侧抛光的独立GaN衬底25、金属头座26、金属线27(连接到p电极20)、金属线28(连接到n型金属电极29)及其中囊封LED芯片的硅酮锥模具30。箭头31指示由所述LED发射的光的可能轨迹。
在界定了蚀刻掩模之后,在GaN衬底25的背侧表面32上执行等离子辅助化学蚀刻。借助某一比例的不同腐蚀性气体(包含但不限于:基于氯及氟的气体及其它气体),在某一室压力及等离子功率下,等离子辅助化学蚀刻界定带有特征在于倾斜侧壁的特征的未遮蔽区域。因此,表面32是通过形成拼起大部分表面32的锥形特征来粗糙化。类似陨石坑的凹坑可作为适当的蚀刻条件、蚀刻时间及蚀刻掩模材料使用的组合的结果而形成于每一锥形特征的顶部上。通过感应耦合等离子(ICP)蚀刻器实施的实例性粗糙化程序的蚀刻条件包含某一比率的基于氯及基于氟的气体(10∶1到150∶1)、适当的ICP功率(介于100瓦到1000瓦之间)、期望的偏置功率(介于10瓦到500瓦之间)及适宜的室压力(1到50帕斯卡)。
图3a是GaN表面在30分钟的通过使用圆形蚀刻掩模(直径2微米且中心之间分开8微米)的实例性粗糙化程序处理之后的SEM图像,且图3b是相同样本的横截面SEM图像。图3a及3b图解说明表面是如何通过形成拼起大部分所述表面的锥形特征33(带有倾斜侧壁34)来粗糙化及凹坑35可如何形成于每一锥形特征33的顶部上。
相信锥形特征(或经截头锥形特征)对光提取有益[20]。图4图解说明光从此类锥形特征40、33逃逸的过程。在特征-空气边界42处入射的光射线41透射穿过氮化物半导体-空气界面(或特征-空气边界42)(虚线箭头43)或由边界42反射(实线箭头44)。大部分经反射的射线44在于特征40(所述特征导致半导体-空气界面(或特征-空气界面42)处的入射角增加(90°-θ))内部经历若干后续反射45之后可最终通过特征-空气界面42处的近乎法线入射从锥40逃逸46。在上文中,特征-空气界面42及半导体-空气界面是等效的。例如,光射线41源自有源区,且特征40通常与n型氮化物层具有界面47。
图5是经粗糙化表面的光学显微镜图像。由粗糙化程序产生的褪色及暗表面可归因于在空气与GaN边界处的光散射,且此表面一般来说具有比光滑的“镜面状”对应表面更好的光提取特性[19]。
如图6中所示,经粗糙化特征60的几何形状包含侧壁倾斜角度61、锥直径62和63及锥高度64以及所述锥形特征60的数密度可通过使用适当的蚀刻掩模及适宜的蚀刻条件进行调整以实现最优光提取。应注意,等离子辅助化学蚀刻是非平衡过程,因此此粗糙化程序可应用于任何氮化物半导体表面上,而不管其晶体定向及极性如何。
借助此设计,在有源区内产生的光能够从裸片两侧有效地逃逸;且朝向衬底传播的光的提取效率可因表面粗糙化而显着增加。因此,期盼对输出功率的改进。
处理步骤
图7图解说明本发明一个实施例的处理步骤。
方框70表示例如在经双侧抛光的独立GaN衬底上通过有机金属化学气相沉积(MOCVD)生长外延层(装置生长),借此形成样本的步骤。
方框71表示使所述样本退火以活化p型掺杂物的步骤(p型活化)。
方框72表示通过等离子辅助化学蚀刻进行表面粗糙化的步骤。
方框73表示使用溶剂及酸清洁所述经粗糙化样本的步骤(样本清洁)。
方框74表示(在p型层上)沉积p型电极(例如,镍及氧化铟锡(ITO)半透明电极)的步骤。
方框75表示例如通过基于氯的干式蚀刻来界定台面区域的步骤。
方框76表示沉积p型及n型金属垫(例如,沉积钛、铝、镍及金n型电极及p型电极)的步骤。
方框77表示例如以悬挂时的几何形状封装所述LED的步骤。
可能修改及变更
所述LED可由如下各项组成:极性c面(0001)(Al、Ga、In)N、非极性a面(11-20)及m面(1-100)(Al、Ga、In)N或半极性(Al、Ga、In)N,其中半极性是指拥有两个非零h、i或k密勒指数及非零l密勒指数{hikl}的各种各样的平面。
此外,除独立及大块的GaN衬底之外,所述LED还可在异质衬底上生长,例如蓝宝石、碳化硅、硅、锗、砷化镓、磷化镓、磷化铟或尖晶石晶片,且可采用例如激光剥离的技术来将所述衬底与氮化物半导体分开以便可进行粗糙化过程。
如果即将粗糙化表面的晶体定向是半极性(11-22)定向的GaN表面,则也可通过光增强型化学(PEC)蚀刻程序来实施表面粗糙化。所述经粗糙化表面由一个或一个以上三角形金字塔覆盖,如图8中所示,所述三角形金字塔由如下各项组成:c极性(0001)GaN表面及m面[1-100]GaN表面。
此粗糙化技术可应用于除优选实施例中所涵盖的一个结构之外的各种高光提取效率LED结构。
图9是根据本发明实例性实施例的高光提取效率LED的图示。呈倒装芯片结构的LED包括通过本发明粗糙化92的独立GaN衬底91、n型Ⅲ-氮化物93、n型电极94、Ⅲ-氮化物有源区95、p型Ⅲ-氮化物层96、p型电极及光反射器97及主体子安装座98。箭头99指示由所述LED发射的光的可能轨迹。
图10是根据本发明实例性实施例的高光提取效率LED的图示。所述LED包括n型Ⅲ-氮化物层1001、Ⅲ-氮化物有源区1002、p型Ⅲ-氮化物层1003、n型电极1004及主体子安装座1005。独立GaN衬底1007的背侧1006通过本发明来粗糙化。具有p型电极的n型氧化锌(ZnO)锥形元件1008毗邻p型Ⅲ-氮化物层1003,其可帮助改进对有源层1002朝向p型层1003发射的光1009a的光提取。箭头1009a、1009b指示从LED的有源区1002发射的光的可能轨迹。图中还显示外部介质1010。
图11是图解说明一种用于制造Ⅲ-氮化物发光二极管(LED)的方法的流程图。
方框1100表示纹理化所述LED的Ⅲ-氮化物层的半极性或非极性平面的至少一个表面以形成经纹理化表面1006的步骤,其中通过等离子辅助化学蚀刻来执行所述纹理化步骤。可通过光刻之后进行蚀刻来执行所述纹理化步骤。可使用纳米压印之后进行蚀刻来形成经纹理化表面1006。可主要从经纹理化表面1006提取由所述LED的有源区发射的光。方框1100的纹理化步骤可进一步包括(也参考图4):
(1)方框1101,其表示形成带有至少一个侧壁42的至少一个特征40的步骤,所述至少一个侧壁反射44并透射43、46从特征40内部入射的至少一个光射线41,及
(2)方框1102,其表示如下步骤:使侧壁42倾斜以使得每次反射44射线时,射线44相对于侧壁42的表面法线n的入射角θ减小,从而(a)在该射线的入射角θ小于临界角(θC)时,该射线穿过侧壁42的透射46增加,且(b)在射线41、44的入射角θ至少等于θC时,该射线至少部分地由侧壁42反射44。θC是高于其会发生全内反射的临界角,θC=arcsin(nexternal/ninternal),其中next是外部介质1015的折射率且ninternal是内部介质(即,特征40)的折射率。表面法线n是垂直于侧壁42的幻影线。
方框1103(还指图4及图10)表示使用图11的方法制造的装置。所述装置可以为Ⅲ-氮化物发光二极管(LED),其包括n型Ⅲ-氮化物1001;p型Ⅲ-氮化物1003;用于发射光(1009a、1009b)的Ⅲ-氮化物有源层1002,其形成于n型Ⅲ-氮化物1001与p型Ⅲ-氮化物1003之间;Ⅲ-氮化物光提取表面1006,其位于衬底1007上或n型Ⅲ-氮化物1001上并与外部介质1010形成界面,其中Ⅲ-氮化物光提取表面1006具有带有至少一个倾斜侧壁42的特征40,所述至少一个倾斜侧壁在所述界面处将光1009b透射到外部介质1010中并在所述界面处反射所述光,其中:(1)经反射的光44在于特征40内部经历若干后续反射45之后在界面42处具有增加的入射角(90°-θ)且因此被透射1009b至外部介质1010的机会增加,且(2)n型Ⅲ-氮化物1001、p型Ⅲ-氮化物1003及Ⅲ-氮化物有源层1002是半极性或非极性层。外部介质1010通常是折射率小于Ⅲ-氮化物的介质,例如空气或真空。
在以上说明中,Ⅲ-氮化物可称为Ⅲ族氮化物或仅称为氮化物或(Al、Ga、In、B)N或Al(1-x-y)InyGaxN,其中0<x<1及0<y<1。
优点及改进
本发明的一个最值得注意的优点在于其显着增加从基于氮化物的LED(包含沿非极性及半极性定向生长的LED)的光提取效率。另外,与其它光提取增强技术(例如,使用光子晶体)相比较,此发明更直接。更重要的是,不同于也是简单光提取增强技术的PEC蚀刻,此发明本更通用,因为其可应用于任何氮化物半导体表面而不管其晶体结构如何。本发明将实现高功率及高效率LED。
参考文献
以下参考文献以引用方式并入本文中:
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总结
此对本发明的优选实施例的说明加以总结。已出于图解说明及说明的目的呈现对本发明的一个或一个以上实施例的前述描述。其并非打算穷尽列举或将本发明限于所揭示的精确形式。鉴于以上教示,可做出许多修改及变更。本发明的范围不打算受此实施方式的限制而仅受以上权利要求书的限制。
Claims (9)
1.一种用于制造III-氮化物发光二极管(LED)的方法,其包括:
纹理化所述LED的III-氮化物层的半极性或非极性平面的至少一个表面以形成经纹理化表面,其中通过等离子辅助化学蚀刻来执行所述纹理化步骤。
2.如权利要求1所述的方法,其中通过光刻之后进行所述蚀刻来执行所述纹理化步骤。
3.如权利要求1所述的方法,其中使用纳米压印之后进行所述蚀刻来形成所述经纹理化表面。
4.如权利要求1所述的方法,其中从所述经纹理化表面提取由所述LED的有源区发射的光。
5.如权利要求1所述的方法,其中所述纹理化步骤进一步包括:
(1)形成带有至少一个侧壁的至少一个特征,所述至少一个侧壁反射并透射从所述特征内部入射的至少一个光射线;及
(2)使所述侧壁倾斜,以使得每次反射所述射线时所述射线相对于所述侧壁的表面法线的入射角减小,从而:
(a)在所述射线的所述入射角小于临界角时,所述射线穿过所述侧壁的透射增加,且
(b)在所述射线的所述入射角至少等于所述临界角时,所述侧壁反射所述射线。
6.一种用于从III-氮化物发光二极管(LED)发射光的方法,其包括:
从所述LED的III-氮化物层的半极性或非极性平面的至少一个经纹理化表面发射所述光,其中通过等离子辅助化学蚀刻来执行所述纹理化。
7.一种III-氮化物发光二极管(LED),其包括:
(a)n型III-氮化物;
(b)p型III-氮化物;
(c)发射光的III-氮化物有源层,其形成于所述n型III-氮化物与p型III-氮化物之间;
(d)III-氮化物光提取表面,其位于所述n型III-氮化物上并与外部介质形成界面,其中所述Ⅲ-氮化物光提取表面具有带有至少一个倾斜侧壁的特征,所述至少一个倾斜侧壁在所述界面处将所述光透射到外部介质空气中并在所述界面处反射所述光,其中:
(1)所述经反射的光在于所述特征内部经历若干后续反射之后具有增加的相对于所述界面的入射角且因此被透射到所述外部介质的机会增加,且
(2)所述n型III-氮化物、p型III-氮化物及III-氮化物有源层为半极性或非极性层。
8.如权利要求7所述的LED,其中所述外部介质为折射率小于III-氮化物的介质。
9.如权利要求7所述的LED,其中所述外部介质为空气或真空。
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-
2008
- 2008-12-01 EP EP08854859.9A patent/EP2218114A4/en not_active Withdrawn
- 2008-12-01 TW TW097146655A patent/TWI452726B/zh not_active IP Right Cessation
- 2008-12-01 CN CN200880117788.7A patent/CN101874307B/zh not_active Expired - Fee Related
- 2008-12-01 TW TW103125772A patent/TW201442280A/zh unknown
- 2008-12-01 KR KR1020107013951A patent/KR20100097179A/ko not_active Application Discontinuation
- 2008-12-01 WO PCT/US2008/085191 patent/WO2009070809A1/en active Application Filing
- 2008-12-01 JP JP2010536226A patent/JP2011505700A/ja active Pending
- 2008-12-01 US US12/325,946 patent/US8114698B2/en not_active Expired - Fee Related
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2012
- 2012-01-12 US US13/349,342 patent/US8835200B2/en not_active Expired - Fee Related
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CN106972346A (zh) * | 2010-03-04 | 2017-07-21 | 加利福尼亚大学董事会 | 在C‑方向错切小于+/‑15度的m‑平面基底上的半极性III‑氮化物光电子装置 |
CN106972346B (zh) * | 2010-03-04 | 2019-12-10 | 加利福尼亚大学董事会 | 在C-方向错切小于+/-15度的m-平面基底上的半极性III-氮化物光电子装置 |
US11552452B2 (en) | 2010-03-04 | 2023-01-10 | The Regents Of The University Of California | Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction |
CN102623579A (zh) * | 2011-01-28 | 2012-08-01 | 展晶科技(深圳)有限公司 | 半导体发光芯片制造方法 |
CN104300062A (zh) * | 2013-07-18 | 2015-01-21 | Lg伊诺特有限公司 | 发光器件 |
CN104300062B (zh) * | 2013-07-18 | 2019-01-29 | Lg伊诺特有限公司 | 发光器件 |
WO2017124879A1 (zh) * | 2016-01-18 | 2017-07-27 | 厦门市三安光电科技有限公司 | 一种半极性led结构及其制备方法 |
CN110034216A (zh) * | 2018-01-12 | 2019-07-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii-v族氮化物深紫外发光二极管结构及其制作方法 |
CN112968085A (zh) * | 2020-12-04 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 一种外延片的制作方法、芯片的制作方法及芯片 |
Also Published As
Publication number | Publication date |
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TW201442280A (zh) | 2014-11-01 |
WO2009070809A1 (en) | 2009-06-04 |
US8835200B2 (en) | 2014-09-16 |
KR20100097179A (ko) | 2010-09-02 |
EP2218114A1 (en) | 2010-08-18 |
US20140346542A1 (en) | 2014-11-27 |
US8114698B2 (en) | 2012-02-14 |
CN101874307B (zh) | 2014-06-18 |
US20120104412A1 (en) | 2012-05-03 |
EP2218114A4 (en) | 2014-12-24 |
JP2015065481A (ja) | 2015-04-09 |
JP2011505700A (ja) | 2011-02-24 |
TW200939540A (en) | 2009-09-16 |
TWI452726B (zh) | 2014-09-11 |
US20090146170A1 (en) | 2009-06-11 |
US9040326B2 (en) | 2015-05-26 |
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