JP5204352B1 - 窒化物系半導体発光素子 - Google Patents
窒化物系半導体発光素子 Download PDFInfo
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- JP5204352B1 JP5204352B1 JP2012548251A JP2012548251A JP5204352B1 JP 5204352 B1 JP5204352 B1 JP 5204352B1 JP 2012548251 A JP2012548251 A JP 2012548251A JP 2012548251 A JP2012548251 A JP 2012548251A JP 5204352 B1 JP5204352 B1 JP 5204352B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 66
- 230000005855 radiation Effects 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 59
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000004088 simulation Methods 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000013598 vector Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 gallium nitride compound Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
図4(a)は、本発明の例示的な実施の形態による窒化物系半導体発光素子220を模式的に示す断面図である。
102 バンプ
103 配線
104 実装基板
105 ワイヤ
200 基板
201 n型半導体層
202 活性層(発光層)
203 p型半導体層
204 p型コンタクト層
210 積層構造
220 窒化物系半導体発光素子
301 n側電極
302 p側電極
303 凸部(凹凸構造、テクスチャ)
400 樹脂層
410 支持部材
420 反射部材
500 窒化物系半導体発光素子
410 支持部材
420 反射部材
Ac 中心
Ax 長軸
Ay 短軸
B 底面
L 長方形
o 中心
T 頂部
c 閉曲線
lT 直線
x1 点
x2 点
y1 点
y2 点
Claims (11)
- 成長面がm面であり、GaN系半導体から形成されている発光層と、
前記発光層からの光を放射する少なくとも一つの放射面とを有する窒化物系半導体発光素子であって、
前記放射面は、m面に複数の凸部が設けられた面であり、
前記放射面において、前記複数の凸部のそれぞれの底面は閉曲線内の領域であり、
前記底面の形状は、前記閉曲線上において最も離れた位置に位置する2つの点を結ぶ線分である長軸と、前記長軸の中心を通り、前記長軸と直交する線分である短軸とを有し、
前記長軸と結晶のa軸の延びる方向とがなす角度が45度以内である、窒化物系半導体発光素子。 - 前記閉曲線は凸閉曲線である、請求項1に記載の窒化物系半導体発光素子。
- 前記長軸と前記閉曲線が交わる2つの点を点x1および点x2とし、前記短軸と前記閉曲線が交わる2つの点を点y1および点y2とした場合、
前記点x1、x2のそれぞれを通り、前記短軸と平行な2つの直線と、前記点y1、y2のそれぞれを通り、前記長軸と平行な2つの直線とを辺に有する長方形内に、前記閉曲線が配置されている、請求項1または2に記載の窒化物系半導体発光素子。 - 前記凸部は頂部を有し、
前記凸部の表面は、前記底面から前記頂部に向う方向に突出した曲面である、請求項1または2に記載の窒化物系半導体発光素子。 - 前記閉曲線は楕円である、請求項1から4のいずれかに記載の窒化物系半導体発光素子。
- 前記長軸の長さは、前記短軸の長さの1倍よりも大きく10倍以下である、請求項1から5のいずれかに記載の窒化物系半導体発光素子。
- 前記長軸の長さは、0.5μm以上50μm以下である、請求項1から6のいずれかに記載の窒化物系半導体発光素子。
- 前記放射面は、前記窒化物系半導体発光素子の底面または天面である請求項1から7の何れかに記載の窒化物系半導体発光素子。
- 前記複数の凸部は、楕円錐の形状を有する、請求項1から8のいずれかに記載の窒化物系半導体発光素子。
- 請求項1から9の何れかに記載の窒化物系半導体発光素子と、
前記放射面から放射された光の波長を変換する蛍光物質を含む波長変換部とを備える光源。 - 基板を用意する工程(a)と、
成長面がm面である発光層を含む半導体積層構造を形成する工程(b)と、
前記発光層からの光を放射する放射面上に複数の凸部を形成する工程(c)とを備え、
前記放射面において、前記複数の凸部のそれぞれの底面は閉曲線内の領域であり、
前記底面の形状は、前記閉曲線上において最も離れた位置に位置する2つの点を結ぶ線分である長軸と、前記長軸の中心を通り、前記長軸と直交する線分である短軸とを有し、
前記長軸と結晶のa軸の延びる方向とがなす角度が45度以内である、窒化物系半導体発光素子の製造方法。
Priority Applications (1)
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JP2012548251A JP5204352B1 (ja) | 2011-06-27 | 2012-06-25 | 窒化物系半導体発光素子 |
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JP2011142043 | 2011-06-27 | ||
JP2011142043 | 2011-06-27 | ||
JP2012548251A JP5204352B1 (ja) | 2011-06-27 | 2012-06-25 | 窒化物系半導体発光素子 |
PCT/JP2012/004102 WO2013001781A1 (ja) | 2011-06-27 | 2012-06-25 | 窒化物系半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
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JP5204352B1 true JP5204352B1 (ja) | 2013-06-05 |
JPWO2013001781A1 JPWO2013001781A1 (ja) | 2015-02-23 |
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JP2012548251A Expired - Fee Related JP5204352B1 (ja) | 2011-06-27 | 2012-06-25 | 窒化物系半導体発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8890185B2 (ja) |
JP (1) | JP5204352B1 (ja) |
CN (1) | CN103180974A (ja) |
WO (1) | WO2013001781A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2013132762A1 (ja) * | 2012-03-09 | 2015-07-30 | パナソニックIpマネジメント株式会社 | 発光素子およびその製造方法 |
KR102222860B1 (ko) * | 2013-06-19 | 2021-03-04 | 루미리즈 홀딩 비.브이. | 방출 필드 패턴들에 기초하여 패터닝된 표면 특징부들을 가지는 led |
US9577164B2 (en) | 2013-08-30 | 2017-02-21 | Asahi Kasei E-Materials Corporation | Semiconductor light emitting device and optical film |
CN105810802A (zh) * | 2014-12-27 | 2016-07-27 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
CN110600598B (zh) * | 2019-08-21 | 2021-02-05 | 苏州紫灿科技有限公司 | 一种双层纳米阵列结构的倒装紫外led及制备方法 |
Citations (6)
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JP2006049855A (ja) * | 2004-06-28 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP2008091664A (ja) * | 2006-10-03 | 2008-04-17 | Kyocera Corp | 発光素子及び照明装置並びに光ピックアップ |
JP2009253047A (ja) * | 2008-04-07 | 2009-10-29 | Sumitomo Electric Ind Ltd | Iii族窒化物発光素子及びエピタキシャルウエハ |
JP2010147056A (ja) * | 2008-12-16 | 2010-07-01 | Stanley Electric Co Ltd | Ii−vi族またはiii−v族化合物系半導体発光素子用エピタキシャルウエハ、および、その製造方法 |
JP2010219163A (ja) * | 2009-03-13 | 2010-09-30 | Koito Mfg Co Ltd | 発光モジュール、および灯具ユニット |
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JP4374913B2 (ja) | 2003-06-05 | 2009-12-02 | 日亜化学工業株式会社 | 発光装置 |
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JP2006294907A (ja) | 2005-04-12 | 2006-10-26 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP2007273506A (ja) | 2006-03-30 | 2007-10-18 | Sumitomo Chemical Co Ltd | 化合物半導体発光素子 |
JP5564162B2 (ja) | 2006-09-29 | 2014-07-30 | フューチャー ライト リミテッド ライアビリティ カンパニー | 発光ダイオード装置 |
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2012
- 2012-06-25 CN CN201280003453.9A patent/CN103180974A/zh not_active Withdrawn
- 2012-06-25 WO PCT/JP2012/004102 patent/WO2013001781A1/ja active Application Filing
- 2012-06-25 JP JP2012548251A patent/JP5204352B1/ja not_active Expired - Fee Related
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2013
- 2013-04-23 US US13/868,368 patent/US8890185B2/en not_active Expired - Fee Related
Patent Citations (6)
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WO2003100873A1 (fr) * | 2002-05-28 | 2003-12-04 | Matsushita Electric Works, Ltd. | Element electroluminescent, dispositif electroluminescent et dispositif d'eclairage par emission de surface utilisant ledit element |
JP2006049855A (ja) * | 2004-06-28 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP2008091664A (ja) * | 2006-10-03 | 2008-04-17 | Kyocera Corp | 発光素子及び照明装置並びに光ピックアップ |
JP2009253047A (ja) * | 2008-04-07 | 2009-10-29 | Sumitomo Electric Ind Ltd | Iii族窒化物発光素子及びエピタキシャルウエハ |
JP2010147056A (ja) * | 2008-12-16 | 2010-07-01 | Stanley Electric Co Ltd | Ii−vi族またはiii−v族化合物系半導体発光素子用エピタキシャルウエハ、および、その製造方法 |
JP2010219163A (ja) * | 2009-03-13 | 2010-09-30 | Koito Mfg Co Ltd | 発光モジュール、および灯具ユニット |
Also Published As
Publication number | Publication date |
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JPWO2013001781A1 (ja) | 2015-02-23 |
WO2013001781A1 (ja) | 2013-01-03 |
US8890185B2 (en) | 2014-11-18 |
CN103180974A (zh) | 2013-06-26 |
US20130234179A1 (en) | 2013-09-12 |
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