EP1787330A4 - Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition - Google Patents
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionInfo
- Publication number
- EP1787330A4 EP1787330A4 EP05746303A EP05746303A EP1787330A4 EP 1787330 A4 EP1787330 A4 EP 1787330A4 EP 05746303 A EP05746303 A EP 05746303A EP 05746303 A EP05746303 A EP 05746303A EP 1787330 A4 EP1787330 A4 EP 1787330A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- heterostructures
- fabrication
- devices
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 229910052738 indium Inorganic materials 0.000 title 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56974904P | 2004-05-10 | 2004-05-10 | |
PCT/US2005/015774 WO2005112123A2 (en) | 2004-05-10 | 2005-05-06 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1787330A2 EP1787330A2 (en) | 2007-05-23 |
EP1787330A4 true EP1787330A4 (en) | 2011-04-13 |
Family
ID=35394819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05746303A Withdrawn EP1787330A4 (en) | 2004-05-10 | 2005-05-06 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1787330A4 (en) |
JP (2) | JP5379973B2 (en) |
KR (2) | KR20070013320A (en) |
WO (1) | WO2005112123A2 (en) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7504274B2 (en) | 2004-05-10 | 2009-03-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
JP5379973B2 (en) * | 2004-05-10 | 2013-12-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic vapor phase epitaxy |
JPWO2006088261A1 (en) * | 2005-02-21 | 2008-07-17 | 財団法人神奈川科学技術アカデミー | InGaN layer generation method and semiconductor device |
JP4807081B2 (en) * | 2006-01-16 | 2011-11-02 | ソニー株式会社 | Method for forming underlayer made of GaN-based compound semiconductor, and method for manufacturing GaN-based semiconductor light-emitting device |
KR101416838B1 (en) | 2006-02-10 | 2014-07-08 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Method for conductivity control of (Al,In,Ga,B)N |
JP2008053640A (en) * | 2006-08-28 | 2008-03-06 | Kanagawa Acad Of Sci & Technol | Group iii-v nitride layer and manufacturing method thereof |
JP5077985B2 (en) * | 2006-08-28 | 2012-11-21 | シャープ株式会社 | Method for forming nitride semiconductor layer |
JP2008108924A (en) * | 2006-10-26 | 2008-05-08 | Matsushita Electric Works Ltd | Compound semiconductor light-emitting element, illumination apparatus employing the same and manufacturing method of compound semiconductor light-emitting element |
JP2008153285A (en) * | 2006-12-14 | 2008-07-03 | Rohm Co Ltd | Nitride semiconductor apparatus and nitride semiconductor manufacturing method |
JP2008159606A (en) * | 2006-12-20 | 2008-07-10 | Rohm Co Ltd | Nitride semiconductor light-emitting element and its manufacturing method |
KR100843474B1 (en) | 2006-12-21 | 2008-07-03 | 삼성전기주식회사 | Growth method of iii group nitride single crystal and iii group nitride crystal produced by using the same |
WO2008099643A1 (en) * | 2007-01-30 | 2008-08-21 | Rohm Co., Ltd. | Semiconductor laser diode |
JP2008226865A (en) * | 2007-01-30 | 2008-09-25 | Rohm Co Ltd | Semiconductor laser diode |
JP5363996B2 (en) | 2007-02-12 | 2013-12-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Al (x) Ga (1-x) N cladding-free nonpolar III-nitride based laser diode and light emitting diode |
KR100889956B1 (en) * | 2007-09-27 | 2009-03-20 | 서울옵토디바이스주식회사 | Ac light emitting diode |
TWI452726B (en) | 2007-11-30 | 2014-09-11 | Univ California | High light extraction efficiency nitride based light emitting diode by surface roughening |
JP5003527B2 (en) | 2008-02-22 | 2012-08-15 | 住友電気工業株式会社 | Group III nitride light emitting device and method for fabricating group III nitride semiconductor light emitting device |
US20090310640A1 (en) * | 2008-04-04 | 2009-12-17 | The Regents Of The University Of California | MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES |
CN102576652A (en) * | 2009-08-21 | 2012-07-11 | 天空公司 | Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices |
JP2011049488A (en) * | 2009-08-28 | 2011-03-10 | Sumitomo Electric Ind Ltd | Group iii nitride semiconductor laminate wafer and group iii nitride semiconductor device |
WO2011058697A1 (en) * | 2009-11-12 | 2011-05-19 | パナソニック株式会社 | Method for manufacturing nitride semiconductor element |
JP2011146651A (en) * | 2010-01-18 | 2011-07-28 | Sumitomo Electric Ind Ltd | Group iii nitride light emitting diode |
EP2667421A1 (en) * | 2011-01-21 | 2013-11-27 | Panasonic Corporation | Gallium nitride compound semiconductor light emitting element and light source provided with said light emitting element |
US9236530B2 (en) | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
KR20130066870A (en) | 2011-12-13 | 2013-06-21 | 삼성전자주식회사 | Semiconductor light emitting device |
WO2013123241A1 (en) | 2012-02-17 | 2013-08-22 | The Regents Of The University Of California | Method for the reuse of gallium nitride epitaxial substrates |
WO2014015337A2 (en) | 2012-07-20 | 2014-01-23 | The Regents Of The University Of California | Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser |
KR101954145B1 (en) * | 2012-08-29 | 2019-03-05 | 엘지전자 주식회사 | Non-polar substrate having hetero-structure and method for manufacturing the same, nitride-based light emitting device using the same |
JP5682716B2 (en) * | 2014-01-09 | 2015-03-11 | 三菱化学株式会社 | Nitride semiconductor |
JP6426359B2 (en) * | 2014-03-24 | 2018-11-21 | 株式会社東芝 | Semiconductor light emitting device and method of manufacturing the same |
DE102014113068A1 (en) * | 2014-09-10 | 2016-03-10 | Seaborough Ip I B.V. | Light-emitting device |
FR3076080B1 (en) * | 2017-12-27 | 2019-11-29 | Aledia | PSEUDO-SUBSTRATE FOR OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030198837A1 (en) * | 2002-04-15 | 2003-10-23 | Craven Michael D. | Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3448450B2 (en) * | 1996-04-26 | 2003-09-22 | 三洋電機株式会社 | Light emitting device and method for manufacturing the same |
JP3778609B2 (en) * | 1996-04-26 | 2006-05-24 | 三洋電機株式会社 | Manufacturing method of semiconductor device |
JP2000340892A (en) | 1999-05-26 | 2000-12-08 | Nec Corp | Compound semiconductor device and manufacture thereof |
JP3438674B2 (en) * | 1999-10-21 | 2003-08-18 | 松下電器産業株式会社 | Method for manufacturing nitride semiconductor device |
JP2001160656A (en) * | 1999-12-01 | 2001-06-12 | Sharp Corp | Nitride compound semiconductor device |
US6903376B2 (en) | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
JP2004059325A (en) | 2001-07-04 | 2004-02-26 | Fuji Photo Film Co Ltd | Method for manufacturing substrate for semiconductor device, substrate for semiconductor device, and semiconductor device |
KR100904501B1 (en) * | 2001-10-26 | 2009-06-25 | 암모노 에스피. 제트오. 오. | Substrate for epitaxy |
WO2003036771A1 (en) * | 2001-10-26 | 2003-05-01 | Ammono Sp.Zo.O. | Nitride semiconductor laser element, and production method therefor |
JP2003229645A (en) | 2002-01-31 | 2003-08-15 | Nec Corp | Quantum well structure, semiconductor element employing it and its fabricating method |
US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
US6835957B2 (en) * | 2002-07-30 | 2004-12-28 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with p-type active layer |
US7186302B2 (en) * | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
JP5379973B2 (en) * | 2004-05-10 | 2013-12-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic vapor phase epitaxy |
-
2005
- 2005-05-06 JP JP2007513224A patent/JP5379973B2/en active Active
- 2005-05-06 KR KR1020067025431A patent/KR20070013320A/en not_active Application Discontinuation
- 2005-05-06 KR KR1020117031683A patent/KR101365604B1/en active IP Right Grant
- 2005-05-06 WO PCT/US2005/015774 patent/WO2005112123A2/en active Application Filing
- 2005-05-06 EP EP05746303A patent/EP1787330A4/en not_active Withdrawn
-
2012
- 2012-07-12 JP JP2012156036A patent/JP2012209582A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030198837A1 (en) * | 2002-04-15 | 2003-10-23 | Craven Michael D. | Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
WO2003089694A1 (en) * | 2002-04-15 | 2003-10-30 | The Regents Of The University Of California | NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
Non-Patent Citations (4)
Title |
---|
BHATTACHARYYA A ET AL: "Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1100) and (0001) GaN", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 251, no. 1-4, 1 April 2003 (2003-04-01), pages 487 - 493, XP004416295, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(02)02433-8 * |
CHITNIS ASHAY ET AL: "Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 84, no. 18, 3 May 2004 (2004-05-03), pages 3663 - 3665, XP012061343, ISSN: 0003-6951, DOI: 10.1063/1.1738938 * |
See also references of WO2005112123A2 * |
YUE JUN SUN ET AL: "Nonpolar InxGa1-xN/GaN(11 00) multiple quantum wells grown on [gamma]-LiAlO2(100) by plasma-assisted molecular-beam epitaxy", PHYSICAL REVIEW B (CONDENSED MATTER AND MATERIALS PHYSICS) APS THROUGH AIP USA,, vol. 67, no. 4, 15 January 2003 (2003-01-15), pages 41306 - 1, XP002610861 * |
Also Published As
Publication number | Publication date |
---|---|
KR101365604B1 (en) | 2014-02-20 |
JP2007537600A (en) | 2007-12-20 |
KR20120008539A (en) | 2012-01-30 |
EP1787330A2 (en) | 2007-05-23 |
JP2012209582A (en) | 2012-10-25 |
KR20070013320A (en) | 2007-01-30 |
JP5379973B2 (en) | 2013-12-25 |
WO2005112123A2 (en) | 2005-11-24 |
WO2005112123A3 (en) | 2006-12-28 |
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