CN102576652A - Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices - Google Patents
Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices Download PDFInfo
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- CN102576652A CN102576652A CN2010800458819A CN201080045881A CN102576652A CN 102576652 A CN102576652 A CN 102576652A CN 2010800458819 A CN2010800458819 A CN 2010800458819A CN 201080045881 A CN201080045881 A CN 201080045881A CN 102576652 A CN102576652 A CN 102576652A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L21/02389—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over the first to create a stacked structure. The stacked structure consists of a total thickness of less than about 2 microns.
Description
The cross reference of related application
The application requires the priority of the U.S. Provisional Application number 61/235,989 (attorney is 027364-007500US) of submission on August 21st, 2009, incorporates among the application by reference at this its full content.
Technical field
Present invention relates in general to lighting technology.More specifically; Execution mode of the present invention comprises employing metal-organic chemical vapor deposition (" MOCVD ") technology; On the material (bulk gallium and nitrogen containing material) of bulk gallium-containing and nitrogen, epitaxial structure is the technology of growth fast.The present invention can be used for like white light, polychromatic light, flat-panel monitor illumination and other photoelectron devices, and other application.
Background technology
In the 19th-century later stage, Thomas-Edison has invented bulb.Traditional bulb is referred to as " Edison's bulb " usually, has been employed above 100 years.Conventional light bulb adopts and is closed in the tungsten filament in the glass envelope, and glass envelope is sealed on the base, and base is by in socket of precession.Socket with exchange or the DC power supply coupling joins.Conventional light bulb usually can be in dwelling house, building and outdoor lighting, and needs other places of light to find.Regrettably, traditional Edison's bulb exists not enough.That is exactly, the conventional light bulb great amount of heat energy that sheds.The energy that is used for conventional light bulb dissipates with heat energy above 90%.In addition, the conventional light bulb conventional fault is usually owing to the thermal expansion and the contraction of filament element.
Fluorescent illumination has overcome some shortcomings of conventional light bulb.A kind of tubular structure that is full of halogen gas is adopted in fluorescent illumination.Pair of electrodes in the pipe is coupled to AC power through ballast.When gas is excited, will discharge, luminous.Common tube applies with phosphate material.Many buildings adopt fluorescent illumination, and recently, but fluorescent illumination has been applicable to the base of precession standard incandescent bulb socket.
The solid-state illumination technology also is known.Solid-state illumination typically relies on semi-conducting material to produce light-emitting diode (LED).Commerce is showed and be used for to red LED at first.Red LED adopts AlGaInP (AlInGaP) semi-conducting material.Recently, Shuji Nakamura has started the turn blue LED of the light in the coloured light spectrum of Application of I nGaN manufacture of materials.Blue led has caused the reform like blue-ray DVD machine, solid-state white and other development.Also proposed the LED of other colors, but also there is limitation in solid-state illumination.At this specification this circumscribed more details have been described in full, especially hereinafter.
By above-mentioned visible, extreme needs to improve the technology of Optical devices.
Summary of the invention
The present invention relates generally to lighting technology.More specifically, execution mode of the present invention comprises employing metal-organic chemical vapor deposition (" MOCVD ") technology, and on the material of bulk gallium-containing and nitrogen, epitaxial structure is the technology of growth fast.The present invention can be used to like white light, polychromatic light, flat-panel monitor illumination and other photoelectron devices, and other application.
In an embodiment, the invention provides the method that a kind of quick growth contains the material of gallium and nitrogen.This method comprises provides the bulk gallium-containing with surf zone and the substrate of nitrogen.This method forms first epitaxial material with first thickness at the substrate surface of bulk gallium-containing and nitrogen.In a kind of preferred implementation, formed first epitaxial material of pseudomorphic crystal (pseudomorphically).This method also forms second epitaxial material on first epitaxial material, to form laminated construction (stacked structure).A kind of preferred embodiment in, second epitaxial material is formed with source region, for example the knot (junction).The gross thickness of preferred laminated construction is no more than about 2 microns, and being that the main part (substantial portion) of the epi region of optics or electrical devices is a characteristic at least.The speech of here using " first " and " second " are not meaned any order or sequence usually.In a specific implementations, " pseudomorphic crystal " typically refers to so a kind of lattice match process, wherein first epitaxial material by lattice match to the substrate that contains gallium and nitrogen of bulk.One preferred embodiment in, the interface that the gallium nitride material that extension forms has basically with the block substrate that contains gallium and nitrogen or complete lattice matees each other.
In a specific implementations, first epitaxial material is less than 1 micron or less than 100 nanometers.Epitaxial material is less than 1 micron or less than 10 nanometer thickness.First epitaxial material is with 1E4cm
-1Or less than 1E4cm
-1Concentration of stacking faults, and possibly have 1E8cm
-2Or less than 1E8cm
-2Screw dislocation be characteristic.Epitaxial material is so that uniform basically defect concentration is a characteristic from the ground floor zone to second layer zone.Have between preferred first epitaxial loayer and the surf zone and be substantially free of for example GaN or AlN or AlGaN, or other contain the interface of the nucleating layer of gallium and nitrogen material.
This method is a characteristic with quick growth time.In a specific implementations, form the total growth time that contains gallium and nitrogen epitaxial material and be less than 1 hour, be less than 30 minutes usually, can also be less than 15 minutes.In a specific implementations, this method has the indoor time (chamber time) that is characterized by total growth time and heating-up time (temperature ramping time).The indoor time possibly be less than 1 hour, also can be less than 30 minutes.In a specific implementations, this method has circulation timei, comprises indoor time and loading and discharge time, is less than 2 hours, also can be less than 1 hour, even less than 30 minutes.In a specific implementations, the material that contains gallium and nitrogen is characterized by per hour 4 microns or higher growth rate, and the growth rate that the n-type contains the material of gallium and nitrogen is per hour 6 microns or higher.In a specific implementations, the p-type contains the material of gallium and nitrogen with per hour 2 microns or more highland growth.Higher growth rate preferably produces through the mode of atmosphere MOCVD reactor, but pressure can be a little higher than or be lower than atmospheric pressure.Contain the material (for example comprising silicon dopant) of gallium and nitrogen for the n-type, growth temperature range is from about 950 ℃ to 1200 ℃ or higher; Contain the material (for example comprising the magnesium dopant) of gallium and nitrogen for the p-type, growth temperature range is from 950 ℃ to about 1025 ℃.Should be noted that traditional MOCVD reactor comprises the electric thermo-couple temperature device that joins with the pedestal coupling, its clamping workpiece and/or substrate are although have variation.
In another embodiment, can in the reactor of operating a plurality of wafers like the ability of boxlike (autocassette, cassette tape formula automatically) by automatic succession, form one or more epitaxial materials.In such configuration, the wafer loading and unloading of (loadlock) can automatically perform from the growth room to the load lock, are not interrupted or wait for the transfer of wafer between load lock and laboratory or workshop.A kind of configuration is to adopt manipulator (robotic arm) transferring plates between load lock chamber and reative cell.In such configuration, on pedestal or pallet, wafer transfer shifts to the growth room with from the growth room, and wafer will carry out epitaxial growth.In preferred embodiment, pedestal or pallet contain a plurality of wafers, so that in reative cell, can form one or more epitaxial materials, and can on a plurality of wafers, grow simultaneously.The term boxlike of here using is often referred to the cassette tape with a series of pallets, and a base wafer or workpiece are arranged on each pallet, so that each workpiece loads in order automatically.In preferred embodiment, the cassette tape that comprises multiple substrate or workpiece be retained in MOCVD chamber coupling join indoor, thereby reduce the operating time etc.
The present invention has realized realizing growth, the for example method and system of supper-fast growth fast with polycrystalline sheet boxlike.In a specific implementations, this method and system can be set to the atmospheric pressure growth, owing to realized growth rate faster, thereby need shorter growth time, and this is desired.In a specific implementations, adopt polycrystalline sheet cassette tape, native system and method can be set to big substrate, such as 4 inches, 6 inches and bigger.In a preferred implementation, this method causes that also impurity moves away from growth interface.The present invention also is used in the luminous a series of Optical devices of blueness, purple, green, yellow and other color gamuts.Certainly, other variations, improvement and alternative can be arranged.
The invention provides the method that a kind of quick growth contains the material of gallium and nitrogen.This method comprises provides the bulk gallium-containing with surf zone and the substrate of nitrogen, and forms first epitaxial material with ground floor thickness of the surf zone of the substrate that is superimposed upon bulk gallium-containing and nitrogen with the growth rate of 4 nanometers at least per hour.Formed first epitaxial material of the surf zone of the substrate that is superimposed upon bulk gallium-containing and nitrogen with the pseudomorphic crystal structure.This method comprises that formation is superimposed upon one or more layers second epitaxial material on first epitaxial material, and sets the formation laminated construction.
Yet in other embodiments, can in single or a plurality of reative cells, form one or more epitaxial materials.In specific implementations, can in single reative cell and/or a plurality of reative cell or combination in any, form one or more or all epitaxial materials.In preferred embodiment, in constant Temperature Distribution, form one or more epitaxial materials.Certainly, other variations, improvement and alternative can be arranged.
This method provides level and smooth epitaxial material.As an example, the n-type contains the material of gallium and nitrogen, and surface roughness is characterized by about 1nm RMS and in 5 microns area of space, is less than 5 microns.As an example, the p-type contains the material of gallium and nitrogen, and surface roughness is characterized by about 1nm RMS and in 5 microns area of space, is less than 5 microns.
Aft section and accompanying drawing through with reference to this specification can further be understood essence of the present invention and advantage.
Description of drawings
Fig. 1 is according to an embodiment of the invention, adopts the simplified illustration of a traditional optical device of thick epitaxial layer;
Fig. 2 is according to an embodiment of the invention, the simplified illustration of Optical devices;
Fig. 3 is according to an embodiment of the invention, a kind of simplicity of illustration of processing method;
Fig. 4 is according to an embodiment of the invention, a kind of temperature of Optical devices processing method and the reduced graph of growth time;
Fig. 5 is traditional optical device and the reduced graph of according to the embodiment of the present invention Optical devices of contrast on the sapphire;
Fig. 6 is according to an embodiment of the invention, a kind of simplicity of illustration of growing method of Optical devices;
Fig. 7 is according to an embodiment of the invention, a kind of simplicity of illustration of growing method of rectification p-n junction diode;
Fig. 8 is according to an embodiment of the invention, the simplicity of illustration of the growing method of a kind of HEMT or metal-semiconductor field effect transistor.
Embodiment
We find, are based at the luminous traditional Light-Emitting Diode based on GaN (LED) of ultraviolet and visible region in the non-GaN substrate of a kind of for example sapphire, carborundum or silicon to cause the heteroepitaxial growth of growing.This is because the source finite sum of independent GaN substrate is expensive, and this has stoped it to be used for the feasibility that LED produces.Yet 2 years in the past, block GaN technical field development was swift and violent, for large-scale application in LED produces has been brought hope.This technological means will be brought interests for performance and the production of LED.
With reference to figure 1, growth need have low temperature or high temperature nucleating layer usually on substrate interface in external substrate; In order to technology such as the horizontal extension undue growth technology of alleviating the mismatch defective that on the GaN/ substrate interface, forms; Between substrate and luminescence activity layer, grow, the thick resilient coating in order to the negative effect that reduces the mismatch defective generally includes n-type GaN, but also can be other like In
xAl
yGa
1-x-yN; Place InGaN/GaN or AlGaN/GaN superlattice between substrate and the luminescence activity layer, in order to improve the emission efficiency in strain alleviation, defective alleviation or some other mechanism; Place InGaN or AlGaN resilient coating between substrate and the luminescence activity layer, in order to improve the emission efficiency in strain alleviation, defective alleviation or some other mechanism; And thicker p-type GaN layer, in order to alleviate Electrostatic Discharge and to reduce leakage current.Comprise all these layers simultaneously, the growth of traditional LED may 4-10 consuming time hour.
Through the LED that in block GaN substrate, grows, can cancel the low temperature nucleating layer, for example shown in Fig. 2.This just signal of figure, and should excessively not limit the claim scope in this specification.A those of ordinary skill of this area can be recognized other variation, improvement and replacement.Owing to there is not misfit dislocation, defective mitigation technique such as horizontal extension undue growth are optional.Usually needn't between substrate and active region, adopt alloy superlattice or alloy-layer to improve emission efficiency.The resilient coating that substrate is separated with luminescent layer can be accomplished ultra-thin, from the 1-2 micron until 10-20 nanometer or fully phase out.All these are relaxed the restriction for layer thickness and contained layer requirement, and total extension lamination thickness can be reduced to the part of traditional LED structure.Total LED thickness can be reduced to below 250 nanometers, and can be reduced to 30 nanometers in theory always.As a result of, total LED growth time can be reduced to below 1 hour, can be reduced to 15 minutes in theory always.
In addition, because required many different grown layers need different growth temperatures usually among the traditional LED that in external substrate, grows, thereby the minimizing of the growth number of plies also will make temperature-rise period required in the growth regulating still less in the LED structure.Because total growth time reduces, heating-up time shared mark in total cycle time becomes more remarkable.Therefore, the temperature-rise period of required simplification is crucial for high growth output in this scheme.
Because the required indoor time of wafer sharply reduces, when attempting to reduce total growth during circulation timei, the required wafer operating time of loading and unloading wafer becomes important further from the growth instrument.In other words, if 15-30 minute loading and unloading time is arranged in the beginning of each growth course with when finishing, the total time relevant with these steps can be 30-60 minute.The required indoor time is less than 1 hour, and the loading and unloading step will constitute 1/3 to 1/2 of total cycle time.The pith of loading and unloading time is formed by the tote between growth room and the external environment being bled and inflating.Its objective is in order to prevent that impurity from entering into the growth room with their mode, and prevent that the product of growing from leaving the growth room.The growth instrument that is provided between growth room and outfit are used to deposit the load lock chamber of wafer cassette tape of subsequent growth wafer, changing automatically back and forth wafer will provide the reduction of total growth twice circulation timei.At first, because the whole cassette tape of load lock loading and unloading only need be bled and purge once, thereby must still less bleed and purge circulation.In other words, if but the wafers of 10 of cassette tape clampings order growth, for the loading and unloading circulation, if total once to the bleeding and purging of whole 10 wafers, rather than each wafer is carried out respectively.Therefore total purge time of bleeding will shorten to original 1/10th.The root of second time shortening is the thermal bimorph operation of being launched by automatic loading and unloading mechanism.This is this fact that can bear high temperature owing to the switch machine by metal or other materials structure, and because wafer can not touch surrounding environment in heat, thereby do not have contamination of heavy.These of this method and structure and other characteristics can find at this specification in full, especially hereinafter.
At last, can combine with the boxlike characteristic of this supper-fast growing method and above description with the utilization that 2 or a plurality of substrate are loaded into the polycrystalline sheet MOCVD reactor of same chamber.In another improved, through be equipped with a plurality of chambers for reactor, wherein each chamber all kept different temperatures, and temperature cycles time and stabilization time can minimize.This configuration can adopt transfer arm to move wafer to other chambers from a chamber.
Fig. 3 is according to an embodiment of the invention, a kind of simplicity of illustration of processing method.This just signal of figure, and should excessively not limit the claim scope in this specification.The those of ordinary skill in this area can be discerned other variation, improvement and replacement.
Fig. 4 is according to an embodiment of the invention, a kind of temperature of Optical devices processing method and the reduced graph of growth time.This just signal of figure, and should excessively not limit the claim scope in this specification.The those of ordinary skill in this area can be discerned other variation, improvement and replacement.As shown in the figure, vertical axis representative in degree centigrade electric thermo-couple temperature, and the trunnion axis representative in minute growth time.As shown in the figure, by the curve display of 1 ', 2 ', 3 ' representative the growth of nonpolar LED on block nitrogen gallium material.Block gallium nitride material is a non-polar GaN, but can be other.Figure is last also to be shown, by the curve display of 1,2,3,4,5,6,7 representatives the growth of traditional c-planar LED device on sapphire material.Contrasted traditional LED structure in the table in the external substrate and the growth time of in block substrate, growing.About 1, be the LED structure of on block GaN, growing, but temperature cycles is adopted in the growth of active region.About 2, the LED structure of on block GaN, growing does not have temperature cycles, all under identical temperature, grows on promptly all layers.Clearly, the growth time of block gallium nitride material obviously is less than the growth time of traditional c-planar LED device.The obvious minimizing of growth time is through removing grown layer such as nucleating layer, InGaN/GaN superlattice and passing through to reduce n-and the completion of p-GaN coating layer ranges in thickness.Other variation, improvement and replacement can be arranged certainly.
Fig. 5 is traditional optical device and the reduced graph of according to the embodiment of the present invention Optical devices of contrast on the sapphire.This just signal of figure, and should excessively not limit the claim scope in this specification.The those of ordinary skill in this area can be discerned other variation, improvement and replacement.
Fig. 6 is according to an embodiment of the invention, a kind of simplicity of illustration of growing method of Optical devices.This just signal of figure, and should excessively not limit the claim scope in this specification.The those of ordinary skill in this area can be discerned other variation, improvement and replacement.As shown in the figure, this growth series comprises at least: (1) n-type epitaxial material; (2) active region; (3) electronics barrier zones; (4) p-type epitaxial material.Certainly, other variation, improvement and replacement can be arranged.The more details of this method can find at this specification in full, especially hereinafter.
1, block wafer:
Arbitrary orientation, for example, polarity, nonpolar, semi-polarity, c-plane
Based on (Al, Ga, In) material of N
Screw dislocation (TD) density＜1E8cm-2
Stacking fault (SF) density＜1E4cm-1
Doping＞1E17cm-3
2, n-type epitaxial material:
Thickness＜2um,＜1um,＜0.5um,＜0.2um
Based on (Al, Ga, In) material of N
Growth temperature＜1200 ℃,＜1000 ℃
Be not intended to mix (UID) or mix
3, active region:
At least one deck AlInGaN layer
MQW (MQW) structure
SQW thickness＞20A,＞50A,＞80A
SQW is identical with n-layer and P-layer growth temperature, or similar
Emission wavelength＜575nm,＜500nm,＜450nm,＜410nm
4, p-type epitaxial material:
At least one deck Mg doped layer
Thickness＜0.3um,＜0.1um
Based on (Al, Ga, In) N
Growth temperature＜1100 ℃,＜1000 ℃,＜900 ℃
Has one deck at least as electronic barrier layer
Has one deck at least as contact layer
Certainly, other variation, improvement and replacement can be arranged.At this specification more details have been described in full, especially hereinafter.
In a specific implementations, this method provides the substrate of a kind of bulk gallium-containing and nitrogen.In a specific implementations, the gallium nitride base part is a kind of having the block GaN substrate that semi-polarity or nonpolar crystal surface zone are characteristic, but can be other.In a specific implementations, block nitride GaN substrate comprises nitrogen, and surface dislocation density is lower than 10
5Cm
-2Crystal of nitride or wafer can comprise Al
xIn
yGa
1-x-yN, 0≤x wherein, y, x+y≤1.In a specific implementations, crystal of nitride comprises GaN, but can be other.In one or more execution modes, the GaN substrate has screw dislocation, and density is about 10
5Cm
-2With about 10
8Cm
-2Between, its direction is essentially quadrature or oblique with respect to the surface.As the quadrature of dislocation or the result of oblique orientation, surface dislocation density is lower than about 10
5Cm
-2In a preferred implementation, this method can comprise a kind of for example substrate that contains gallium and nitrogen on c-plane, a-plane, m-plane of arbitrary orientation that is set at.In a specific implementations, substrate is preferably based on (Al, Ga, In) N.The screw dislocation of substrate (TD) density＜1E8cm-2, stacking fault (SF) density＜5E3cm-1, and can be mixed doping content＞1E17cm-3 by silicon and/or oxygen.Certainly, other variation, improvement and replacement can be arranged.
As shown in the figure, this method has formed and has been superimposed upon the n-type material that contains gallium and nitrogen substrate surface.In a specific execution mode, formed epitaxially grown n-type material, thickness is less than 2 microns, or less than 1 micron, or less than 0.5 micron, or less than 0.2 micron, maybe can be other.In the specific execution mode, the n-type material is based on (Al, Ga, In) N.Growth take place to be adopted and to be lower than about 1200 ℃ or be lower than about 1000 ℃ temperature, but usually above 950 ℃.In a preferred implementation, the n-type material is not intended to mix (UID) or adopts silicon class (for example Si) or oxygen class (for example O2) to mix.In a specific implementations, dopant can derive from silane, disilane, oxygen or the like.In a specific implementations, the n-type material is as the contact area of n-type (silicon doping) GaN, and with thickness about 5 microns and doped level about 2 * 10
18Cm-3 is a characteristic.In a preferred implementation, the epitaxial material that contains gallium and nitrogen is deposited in the substrate with Metalorganic Chemical Vapor Deposition (MOCVD) under atmospheric pressure.In growth course, the flow-rate ratio of V family presoma (ammonia) and III family presoma (trimethyl gallium, trimethyl indium, trimethyl aluminium) is between about 3000 to about 12000.Certainly, other variation, improvement and replacement can be arranged.
In a preferred implementation, this method has formed the active region that is superimposed upon n-type contact zone.The active region comprises one deck AlInGaN layer at least, preferably includes multi-quantum pit structure.The characteristic of each SQW can be that thickness is smaller or equal to 20 dusts, smaller or equal to 50 dusts, or smaller or equal to 80 dusts, or its combination or the like.The active region also comprises one or more baffle areas alternatively.In a specific implementations, the growth temperature of n-type contact zone and quantum well region is identical or slightly different.In a preferred implementation, the MQW structure is set to emission smaller or equal to 500nm, smaller or equal to 450nm, smaller or equal to 410nm or other light wave.
In a specific implementations, deposit the not electronics Resistance of doped with Al GaN.In a specific implementations, Resistance thickness is smaller or equal to 0.3 micron or smaller or equal to 0.1 micron.In a preferred implementation, deposition p-type GaN contact zone.The growth temperature of p-type contact zone is preferably smaller or equal to 1100 degrees centigrade or smaller or equal to 1000 degrees centigrade or smaller or equal to 900 degrees centigrade.Indium tin oxide is contacted as the p-type to p-type contact layer by electron beam evaporation plating, and short annealing.Adopt a kind of inductively coupled plasma (ICP) technology to form about 300 * 300 μ m of size through photoetching and deep dry etch process based on chlorine
2The LED platform.To the n-GaN layer that exposes, to form the contact of n-type, on the part of ITO layer, with formation p-contact plate, and wafer is cut into the LED pedestal of separation to Ti/Au to Ti/Al/Ni/Au by electron beam evaporation plating by electron beam evaporation plating.The electronics contact forms through traditional wire-bonded.Certainly, other variation, improvement and replacement can be arranged.
In other execution mode, this method is to be characteristic with quick growth time.In a specific implementations, total growth time characterizes by forming the epitaxial material that contains gallium and nitrogen.Total growth time is less than 1 hour, less than 30 minutes, and less than 15 minutes, or other.In a specific implementations, this method has the indoor time that is characterized by total growth time and heating-up time.The indoor time can be less than 1 hour, less than 30 minutes, or other.In a specific implementations, this method has the circulation timei that is provided by indoor time and loading and discharge time.Can be circulation timei less than 2 hours, less than 1 hour, less than 30 minutes, or other.In a specific implementations, the material that contains gallium and nitrogen is characterized by per hour 4 microns or higher growth rate, or the n-type material that contains gallium and nitrogen is by per hour 6 microns or higher growth rate characterize.In a specific implementations, the p-type contains the material of gallium and nitrogen with per hour 2 microns or higher speed growth.Higher growth rate is preferably taken place by atmospheric MOCVD reactor, also can be a little higher than or be lower than atmospheric pressure.Contain the material (for example comprising silicon dopant) of gallium and nitrogen for the n-type, growth temperature can be in about 950 degrees centigrade to 1200 degrees centigrade or higher temperature range.The material (for example comprising the magnesium dopant) that perhaps contains gallium and nitrogen for the p-type can be at 950 degrees centigrade to about 1025 degrees centigrade temperature range.Certainly, other variation, improvement and replacement can be arranged.
In a preferred implementation, this method provides a kind of level and smooth generation epitaxial material.As an example, the n-type contains the material of gallium and nitrogen, characterize its surface roughness for about 1nmRMS and per 5 microns spatial areas less than 5 microns.In a specific implementations, as an example, the p-type contains the material of gallium and nitrogen, characterize its surface roughness for about 1nmRMS and per 5 microns spatial areas less than 5 microns.Certainly, other variation, improvement and replacement can be arranged.
Fig. 7 is according to an embodiment of the invention, a kind of simplicity of illustration of growing method of rectification p-n junction diode.This just signal of figure, and should excessively not limit the claim scope in this specification.The those of ordinary skill in this area can be discerned other variation, improvement and replacement.As shown in the figure, this growth series comprises at least: (1) n-type epitaxial material; (4) p-type epitaxial material.Certainly, other variation, improvement and replacement can be arranged.The more details of this method can find at this specification in full, especially hereinafter.
1, block wafer
Arbitrary orientation
Based on (Al, Ga, In) N
Screw dislocation (TD) density＜1E8cm-2
Stacking fault (SF) density＜5E3cm-1
Doping＞1E17cm-3
2, n-type layer
＜2um，＜1um，＜0.5um，＜0.2um
Based on (Al, Ga, In) N
Growth temperature＜1200 ℃,＜1000 ℃
UID or doping
3, p-type layer
At least one deck Mg doped layer
＜0.3um，＜0.1um
Based on (Al, Ga, In) N
Growth temperature＜1100 ℃,＜1000 ℃,＜900 ℃
Has one deck at least as electronic barrier layer
Has one deck at least as contact layer
Certainly, other variation, improvement and replacement can be arranged.More details are described at this specification in full.
Fig. 8 is according to an embodiment of the invention, the simplicity of illustration of the growing method of a kind of HEMT or metal-semiconductor field effect transistor.This just signal of figure, and should excessively not limit the claim scope in this specification.The those of ordinary skill in this area can be discerned other variation, improvement and replacement.As shown in the figure, this growth series comprises at least: (1) is not intended to doped epitaxial material (resilient coating); (4) one (AlInGaN) barrier layer is not intended to mix or n-type epitaxial material.Certainly, other variation, improvement and replacement can be arranged.The more details of this method can find at this specification in full, especially hereinafter.
1, block wafer
Arbitrary orientation
Based on (Al, Ga, In) N
Screw dislocation (TD) density＜1E8cm-2
Stacking fault (SF) density＜5E3cm-1
Doping＞1E17cm-3
2, resilient coating
＜2um，＜1um，＜0.5um，＜0.2um
Based on (Al, Ga, In) N
Growth temperature＜1200 ℃,＜1000 ℃
UID or doping
The semi-insulating layer that has at least one deck Fe or C to mix
3, barrier layer
＜0.1um，＜500nm，＜30nm
Based on (Al, Ga, In) N
Growth temperature＜1200 ℃,＜1100 ℃,＜1000 ℃
Has one deck doping Si at least
Certainly, other variation, improvement and replacement can be arranged.More details are described at this specification in full.
In a specific implementations, element nitride crystal comprises nitrogen, and surface dislocation density is lower than 10
5Cm
-2Crystal of nitride or wafer can comprise Al
xIn
yGa
1-x-yN, 0≤x wherein, y, x+y≤1.In a specific implementations, element nitride crystal comprises GaN.In a preferred implementation, at least 3 millimeters length range, element nitride crystal does not have low-angle boundary basically, or the tilt boundary.Element nitride crystal also can comprise one deck at least on a wavelength absorption coefficient of light be higher than 1000cm
-1Releasing layer, on this wavelength, the matrix cystal below the releasing layer is transparent substantially, the absorption coefficient of light is lower than 50cm
-1, can comprise the epitaxial loayer that one deck is high-quality in addition, its surface dislocation density also is lower than 10
5Cm
-2Releasing layer can be etched under the situation that nitride matrix crystal and high-quality epitaxial loayer are not etched.Certainly, other variation, improvement and replacement can be arranged.
In a specific implementations; Substrate can have (0 00 1), (0 0 0-1), 1-1 0 0}, 1 1-2 0}, 1-1 0 ± 1}, 1-1 0 ± 2}, 1-1 0 ± 3}, or 1 1-2 ± 2} 10 the degree with interior, 5 the degree with interior, 2 the degree with interior, 1 the degree with interior, 0.5 the degree with interior, 0.2 the degree with interior big surface orientation.Substrate can have and is lower than 10
4Cm
-2, be lower than 10
3Cm
-2, or be lower than 10
2Cm
-2Surface dislocation density.Nitride matrix crystal or wafer can have the 100cm of being lower than at the wavelength of about 465nm between about 700nm
-1, be lower than 50cm
-1Or be lower than 5cm
-1The absorption coefficient of light.Nitride matrix crystal can about 700nm between about 3077nm and about 3333nm extremely the wavelength between about 6667nm have the 100cm of being lower than
-1, be lower than 50cm
-1Or be lower than 5cm
-1The absorption coefficient of light.Certainly, other variation, improvement and replacement can be arranged.
More than be the complete description of particular implementation method, can adopt various improvement, alternate configuration and equivalent.As an example, the present invention can be applicable to adopt the MOCVD reactor of boxlike, two (or ten or more) of cassette tape clamping wherein or a plurality of independent wafer, or the wafer disk of polycrystalline sheet reactor.In one or more execution modes, epitaxial structure can form the LED matrix that can be transmitted in the electromagnetic radiation in 390-420nm, 420-460nm, 460-4500nm, 500-600nm and other scopes.In a specific implementations, various devices such as p-n diode, Schottky, transistor, HEMT (HEMT), bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), metal-semiconductor field effect transistor (MESFET), metal-oxide semiconductor fieldeffect transistor (MOSFET), metal-insulator semiconductor HFET (MISHFET), combination and other.In alternate embodiments, this method can be applicable to laser diode device,, incorporates among the application by reference at this described in the United States serial 12/759,273 (attorney is 027600-000210US) like those.In one or more execution modes, the material that contains gallium and nitrogen can be characterized by one or more surface orientations, for example, and nonpolar, semi-polarity, polarity.More details of the present invention can find at this specification in full, especially in following instance.
Embodiment
For confirming this experiment principle and operation, we have implemented some experiment.We have showed with the high-quality GaN epitaxial film of 4 microns or the growth of higher high growth rates per hour.This experiment is to adopt the atmospheric pressure MOCVD reactor that is equipped with the reaction gas of mentioning to implement.Reative cell is set to can be the growth of mentioning heat energy is provided.Reaction temperature is measured by the thermocouple that the pedestal coupling with the block wafer of clamping joins.Think the temperature that growth temperature is mentioned a little less than this paper.In addition, also adopt following parameter to implement experiment.
1, block wafer:
Nonpolar, semi-polarity, or polarity
Material based on GaN
Screw dislocation (TD) density＜1E8cm-2
Stacking fault (SF) density＜1E4cm-1
N-type silicon doping＞1E17cm-3
2, N-type epitaxial material:
Thickness＜2um
Based on (Al, Ga, In) material of N
950 ℃＜growth temperature＜1050 ℃
Si mixes
25 micrometer range roughness 2nm RMS
We have showed that adopting quick growing technology is 2nmRMS and littler high quality thin film at 25 micrometer range inside surface roughnesses.Certainly, other variation, improvement and replacement can be arranged.
More than be the complete description of particular implementation method, can adopt various improvement, alternate configuration and equivalent.As an example, the present invention can be applicable to adopt the MOCVD reactor of boxlike, two (or ten or more) of cassette tape clamping wherein or a plurality of independent wafer, or the wafer disk of polycrystalline sheet reactor.In one or more execution modes, epitaxial structure can form the LED matrix that can be transmitted in the electromagnetic radiation in 390-420nm, 420-460nm, 460-4500nm, 500-600nm and other scopes.In a specific implementations, various devices such as p-n diode, Schottky, transistor, HEMT (HEMT), bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), metal-semiconductor field effect transistor (MESFET), metal-oxide semiconductor fieldeffect transistor (MOSFET), metal-insulator semiconductor HFET (MISHFET), combination and other.In alternate embodiments, this method can be applicable to laser diode device,, incorporates among the application by reference at this described in the United States serial 12/759,273 (attorney is 027600-000210US) like those.In one or more execution modes, the material that contains gallium and nitrogen can be characterized by one or more surface orientations, for example, and nonpolar, semi-polarity, polarity.Therefore, above description and diagram should be as the restrictions to scope of the present invention, and scope of the present invention is limited accessory claim.
Claims (60)
1. method for fast growing that contains the material of gallium and nitrogen comprises:
The bulk gallium-containing with surf zone and the substrate of nitrogen are provided;
Formation is superimposed upon first epitaxial material with first thickness of said surf zone of the substrate of said bulk gallium-containing and nitrogen, and the said first epitaxial material pseudomorphic crystal ground forms the said surf zone of the substrate that is superimposed upon said bulk gallium-containing and nitrogen; And
Formation is superimposed upon one or more second epitaxial materials on said first epitaxial material, and is configured to laminated construction;
The gross thickness of said laminated construction is less than about 2 microns thus, and is characteristic with the major part at least of the epi region of optics or electrical devices.
2. method according to claim 1, wherein, said first epitaxial material is less than 1 micron.
3. method according to claim 1, wherein, said first epitaxial material is less than 500nm.
4. method according to claim 1, wherein, said first epitaxial material is less than 100nm.
5. method according to claim 1, wherein, said one or more second epitaxial materials are less than 1 micron.
6. method according to claim 1, wherein, said one or more second epitaxial materials are less than about 500nm.
7. method according to claim 1, wherein, said one or more second epitaxial materials are less than about 100nm.
8. method according to claim 1, wherein, said one or more second epitaxial materials are less than about 1000nm.
9. method according to claim 1, wherein, said first epitaxial material is characteristic with concentration of stacking faults smaller or equal to 1E4cm-1.
10. method according to claim 1, wherein, said first epitaxial material is characteristic with screw dislocation smaller or equal to 1E8cm-2 or smaller or equal to 1E6cm-2.
11. method according to claim 1, wherein, said first epitaxial material is a characteristic with uniform basically defect concentration from the first area to the second area.
12. method according to claim 11, wherein, said uniform basically defect concentration is uniform basically.
13. method according to claim 11, wherein, said uniform basically defect concentration is fully uniformly.
14. method according to claim 1, wherein, said first epitaxial material and said surf zone comprise the interface of neither one basically or a plurality of nucleating layers.
15. method according to claim 1, wherein, said gross thickness is less than about 1 micron.
16. method according to claim 1, wherein, said gross thickness is less than about 500nm.
17. method according to claim 1, wherein, said gross thickness is less than about 200nm.
18. method according to claim 1, wherein, said laminated construction is to be to form within total growth time of the epitaxial material contain gallium and nitrogen to provide in characteristic.
19. method according to claim 18, wherein, said total growth time is less than 1.5 hours or less than 2 hours.
20. method according to claim 18, wherein, said total growth time was less than 1 hour.
21. method according to claim 18, wherein, said total growth time was less than 30 minutes.
22. method according to claim 18, wherein, said total growth time was less than 15 minutes.
23. method according to claim 1, wherein, said laminated construction is in the indoor time that is characterized by total growth time and heating-up time, to provide.
24. method according to claim 23, wherein, the said indoor time is less than 1 hour or less than 1.5 hours.
25. method according to claim 23, wherein, the said indoor time was less than 30 minutes.
26. method according to claim 1, wherein, said laminated construction is in the circulation timei by indoor time and loading and discharge time sign, to provide.
27. method according to claim 26, wherein, said circulation timei is less than 2 hours or less than 2.5 hours.
28. method according to claim 26, wherein, said circulation timei was less than 1 hour.
29. method according to claim 26, wherein, said circulation timei was less than 30 minutes.
30. method according to claim 1, wherein, said first epitaxial material and said one or more second epitaxial material deposit in single chamber.
31. method according to claim 1, wherein, said first epitaxial material and said one or more second epitaxial material deposit respectively in a plurality of chambers.
32. method according to claim 1 further is included in and keeps a definite temperature in the forming process of said first epitaxial material and said one or more second epitaxial materials.
33. the described method of claim 1 comprises further and adopts boxlike MOCVD reactor that said boxlike MOCVD reactor is configured to the wafer disk of two or more independent wafers of clamping or polycrystalline sheet reactor.
34. the described method of claim 1 comprises further and adopts boxlike MOCVD reactor that said boxlike MOCVD reactor is configured to three of clampings or the more a plurality of independent wafer or the wafer disk of polycrystalline sheet reactor.
35. the described method of claim 1 comprises further and adopts boxlike MOCVD reactor that said boxlike MOCVD reactor is configured to ten of clampings or the more a plurality of independent wafer or the wafer disk of polycrystalline sheet reactor.
36. method according to claim 1, wherein, said extension lamination structure forms the LED of emission wavelength ranges at 390-420nm light.
37. method according to claim 1, wherein, said extension lamination structure forms the LED of emission wavelength ranges at 420-460nm light.
38. method according to claim 1, wherein, said extension lamination structure forms the LED of emission wavelength ranges at 460-500nm light.
39. method according to claim 1, wherein, it is the luminous LED of 500-600nm that said extension lamination structure is formed on wave-length coverage.
40. method according to claim 1, wherein, said extension lamination structure forms the p-n diode.
41. method according to claim 1, wherein, said extension lamination structure forms laser diode.
42. method according to claim 1, wherein, said extension lamination structure forms Schottky diode.
43. method according to claim 1, wherein, said extension lamination structure forms transistor.
44. method according to claim 1, wherein, said extension lamination structure forms HEMT (HEMT).
45. method according to claim 1, wherein, said extension lamination structure forms bipolar junction transistor (BJT).
46. method according to claim 1, wherein, said extension lamination structure forms heterojunction bipolar transistor (HBT).
47. method according to claim 1, wherein, said extension lamination structure forms metal-semiconductor field effect transistor (MESFET).
48. method according to claim 1, wherein, said extension lamination structure forms metal-oxide semiconductor fieldeffect transistor (MOSFET).
49. method according to claim 1, wherein, said extension lamination structure forms metal-insulator semiconductor HFET (MISHFET).
50. method according to claim 1, wherein, the said apolar surfaces that is characterized as that contains the substrate of gallium and nitrogen is orientated.
51. method according to claim 1, wherein, the said substrate that contains gallium and nitrogen be characterized as semi-polarity surface orientation or polar surfaces orientation.
52. a method for fast growing that contains the material of gallium and nitrogen comprises:
The bulk gallium-containing with surf zone and the substrate of nitrogen are provided;
Form first epitaxial material with first thickness of the said surf zone of the substrate be superimposed upon said bulk gallium-containing and nitrogen with the growth rate of expectation, first epitaxial material of said surf zone that is superimposed upon the substrate of said bulk gallium-containing and nitrogen is pseudomorphic crystal formation; And
Formation is superimposed upon one or more second epitaxial materials of said first epitaxial material, and is configured to laminated construction.
53. according to the described method of claim 52, wherein, said forming process is maintained at about 950 degrees centigrade in about 1200 degrees centigrade temperature range; And the growth rate of its desired is per hour 4 microns or higher.
54. according to the described method of claim 52, wherein, the said substrate that provides the boxlike that comprises from remain on the chamber to select said bulk gallium-containing and nitrogen.
55. according to the described method of claim 52, wherein, said forming process provides in an atmospheric pressure MOCVD chamber.
56. according to the described method of claim 52, wherein, the said substrate that contains gallium and nitrogen remains on about atmospheric pressure in said forming process.
57. according to the described method of claim 52, wherein, said first thickness characteristics of said first epitaxial material is for for the surface roughness that is lower than about 2nm RMS in 5 microns * 5 microns square.
58. according to the described method of claim 52, wherein, said first thickness of said first epitaxial material is the n-type material.
59. according to the described method of claim 52, wherein, said second epitaxial material is the p-type material.
60. according to the described method of claim 52, wherein, said first epitaxial material be characterized as concentration of stacking faults smaller or equal to 1E4cm-1.
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| US23598909P | 2009-08-21 | 2009-08-21 | |
| US61/235,989 | 2009-08-21 | ||
| PCT/US2010/046231 WO2011022699A1 (en) | 2009-08-21 | 2010-08-20 | Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices |
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| US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123768A (en) * | 1991-03-18 | 2000-09-26 | The Trustees Of Boston University | Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| CN1851942A (en) * | 2006-03-22 | 2006-10-25 | 西安电子科技大学 | Method for one-time growth preparation of composite multi-quanta pit structure |
| US20070111488A1 (en) * | 2004-05-10 | 2007-05-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
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| JP4416297B2 (en) * | 2000-09-08 | 2010-02-17 | シャープ株式会社 | Nitride semiconductor light emitting element, and light emitting device and optical pickup device using the same |
| US6784074B2 (en) * | 2001-05-09 | 2004-08-31 | Nsc-Nanosemiconductor Gmbh | Defect-free semiconductor templates for epitaxial growth and method of making same |
| US6653166B2 (en) * | 2001-05-09 | 2003-11-25 | Nsc-Nanosemiconductor Gmbh | Semiconductor device and method of making same |
| US8366830B2 (en) * | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
| KR100714639B1 (en) * | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | light emitting device |
| JP2005235908A (en) * | 2004-02-18 | 2005-09-02 | Osaka Gas Co Ltd | NITRIDE SEMICONDUCTOR LAMINATED SUBSTRATE AND GaN-BASED COMPOUND SEMICONDUCTOR DEVICE |
| JP5379973B2 (en) * | 2004-05-10 | 2013-12-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic vapor phase epitaxy |
| JP4513446B2 (en) * | 2004-07-23 | 2010-07-28 | 豊田合成株式会社 | Crystal growth method of semiconductor crystal |
| KR100593936B1 (en) * | 2005-03-25 | 2006-06-30 | 삼성전기주식회사 | Method of growing non-polar a-plane gallium nitride |
| JP4806261B2 (en) * | 2006-01-05 | 2011-11-02 | パナソニック株式会社 | Manufacturing method of wafer for nitride compound semiconductor device |
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- 2010-08-20 WO PCT/US2010/046231 patent/WO2011022699A1/en active Application Filing
- 2010-08-20 DE DE112010003358T patent/DE112010003358T5/en not_active Withdrawn
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123768A (en) * | 1991-03-18 | 2000-09-26 | The Trustees Of Boston University | Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| US20070111488A1 (en) * | 2004-05-10 | 2007-05-17 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| CN1851942A (en) * | 2006-03-22 | 2006-10-25 | 西安电子科技大学 | Method for one-time growth preparation of composite multi-quanta pit structure |
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