CN109473511A - A kind of gallium nitride based LED epitaxial slice and its growing method - Google Patents
A kind of gallium nitride based LED epitaxial slice and its growing method Download PDFInfo
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slice and its growing methods, belong to technical field of semiconductors.The growing method includes: to provide a substrate；N type semiconductor layer is grown over the substrate；Active layer is grown on the n type semiconductor layer；In the growth atmosphere formed by hydrogen, one p type semiconductor layer of growth regulation on the active layer；In the growth atmosphere formed by nitrogen, two p type semiconductor layer of growth regulation on first p type semiconductor layer；Wherein, first p type semiconductor layer and second p type semiconductor layer include multiple magnesium nitride layers and multiple magnesium-doped gallium nitride layers, the multiple magnesium nitride layer and the multiple alternately laminated setting of magnesium-doped gallium nitride layer.The hole concentration in p type semiconductor layer can be improved in the present invention, the final luminous efficiency for improving LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its growth
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.With the fast development of LED industry, LED is widely used in the neck such as traffic lights, street lamp, Landscape Lamp, illumination, backlight
Domain, the requirement to LED luminance are higher and higher.Epitaxial wafer is the primary finished product in LED preparation process, the expert of many LED and
Person realizes the raising of LED luminance by adjusting the structure of epitaxial wafer.
Gallium nitride (GaN) has good thermal conductivity, while having the good characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity,
Gallium nitride (GaN) base LED is set to receive more and more attention and study.Existing gallium nitride based LED includes that substrate, N-type are partly led
Body layer, active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P-type
Semiconductor layer is used to provide the hole for carrying out recombination luminescence, and n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, active
Layer shines for carrying out the radiation recombination of electrons and holes, and substrate is used to provide growing surface for epitaxial material.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Since the radius size of magnesium atom and gallium atom is similar, displacement atom easy to form, therefore p type semiconductor layer is logical
Frequently with magnesium-doped gallium nitride.For theoretically, in p type semiconductor layer in the doping concentration and p type semiconductor layer of magnesium elements
The concentration of free hole is positively correlated.If the doping concentration of magnesium elements is lower in p type semiconductor layer, in p type semiconductor layer certainly
It is lower by the concentration in hole, it will limit the recombination luminescence of electrons and holes in active layer, cause the luminous efficiency of LED lower.Cause
This, the doping concentration of magnesium elements is usually higher in p type semiconductor layer.
The doping concentration of magnesium elements higher the problem of magnesium being brought to compensate, the network of neutrality easy to form in p type semiconductor layer
Object is closed, the activation efficiency of magnesium is reduced, while generating a large amount of point defect, causes the crystal quality of p type semiconductor layer poor, is influenced
The concentration of free hole in p type semiconductor layer limits the recombination luminescence of electrons and holes in active layer, causes the luminous effect of LED
Rate is lower.That is crystal quality and magnesium atom activation in p type semiconductor layer of the luminous efficiency of LED by p type semiconductor layer
The restriction of efficiency.
However p type semiconductor layer is generally grown in the growth atmosphere that the mixed gas by nitrogen and hydrogen is formed.Hydrogen
In hydrogen atom can with magnesium atom formed Mg-H key, cause the activation efficiency of magnesium lower；Life of the p type semiconductor layer in nitrogen simultaneously
Crystal quality is poor under long atmosphere.Therefore, the concentration of free hole is lower in p type semiconductor layer, seriously affects the luminous effect of LED
Rate.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and its growing method, it is able to solve existing
There is the concentration of free hole in technology p type semiconductor layer lower, the problem for causing the luminous efficiency of LED lower.The technical side
Case is as follows:
On the one hand, described the embodiment of the invention provides a kind of growing method of gallium nitride based LED epitaxial slice
Growing method includes:
One substrate is provided；
N type semiconductor layer is grown over the substrate；
Active layer is grown on the n type semiconductor layer；
In the growth atmosphere formed by hydrogen, one p type semiconductor layer of growth regulation on the active layer；
In the growth atmosphere formed by nitrogen, two p type semiconductor layer of growth regulation on first p type semiconductor layer；
Wherein, first p type semiconductor layer and second p type semiconductor layer include multiple magnesium nitride layers and multiple
Magnesium-doped gallium nitride layer, the multiple magnesium nitride layer and the multiple alternately laminated setting of magnesium-doped gallium nitride layer.
Optionally, it is adulterated in the quantity of magnesium nitride layer and first p type semiconductor layer in first p type semiconductor layer
The quantity of the gallium nitride layer of magnesium is identical；The quantity of magnesium nitride layer is 5~10 in first p type semiconductor layer.
Optionally, it is adulterated in the quantity of magnesium nitride layer and second p type semiconductor layer in second p type semiconductor layer
The quantity of the gallium nitride layer of magnesium is identical；The quantity of magnesium nitride layer is 5~10 in second p type semiconductor layer.
Optionally, the magnesium nitride layer with a thickness of 1nm~3nm.
Optionally, the magnesium-doped gallium nitride layer with a thickness of 4nm~7nm.
Optionally, the doping concentration of magnesium elements is 10 in the magnesium-doped gallium nitride layer20cm-3~3*1020cm-3。
Optionally, the sum of thickness of second p type semiconductor layer and first p type semiconductor layer be 100nm~
200nm。
Optionally, the growth conditions of first p type semiconductor layer and the second P-type semiconductor growth conditions phase
Together, the growth conditions includes growth temperature and growth pressure.
Preferably, the growth temperature of first p type semiconductor layer is 800 DEG C~1000 DEG C, first P-type semiconductor
The growth pressure of layer is 200torr~600torr.
On the other hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride bases
LED epitaxial slice includes substrate, n type semiconductor layer, active layer, the first p type semiconductor layer and the second p type semiconductor layer,
The n type semiconductor layer, the active layer, first p type semiconductor layer and second p type semiconductor layer are sequentially laminated on
On the substrate, first p type semiconductor layer is grown in the growth atmosphere formed by hydrogen, second P-type semiconductor
Layer is grown in the growth atmosphere formed by nitrogen；First p type semiconductor layer and second p type semiconductor layer include
Multiple magnesium nitride layers and multiple magnesium-doped gallium nitride layers, the multiple magnesium nitride layer and the multiple magnesium-doped gallium nitride layer
Alternately laminated setting.
Technical solution provided in an embodiment of the present invention has the benefit that
By elder generation, one p type semiconductor layer of growth regulation, hydrogen have corrasion in the growth atmosphere formed by hydrogen, can
To handle the first p type semiconductor layer, the defect that p type semiconductor layer is extended in epitaxial process is effectively covered, greatly
The big crystal quality for improving p type semiconductor layer；Two p type semiconductor layer of growth regulation in the growth atmosphere formed by nitrogen again, can
Mg-H key is formed with magnesium atom to avoid the hydrogen atom in the growth atmosphere formed by hydrogen, equivalent to increase P-type semiconductor
The incorporation of magnesium, that is, improve the activation efficiency of magnesium in p type semiconductor layer in layer.First p type semiconductor layer and the second p-type are partly led
Body layer is respectively in terms of the activation efficiency from the crystal quality of p type semiconductor layer and magnesium atom in p type semiconductor layer two to p-type
Semiconductor layer is improved, and can effectively improve the hole concentration in p type semiconductor layer, the final luminous efficiency for improving LED.
And first p type semiconductor layer and the second p type semiconductor layer include multiple magnesium nitride layers of alternately laminated setting and multiple mix
The gallium nitride layer of miscellaneous magnesium, magnesium atom form displacement atom in gallium nitride, can improve with Effective Doping in p type semiconductor layer
The ratio of magnesium atom in gallium position, while the magnesium atom of filling type is reduced, avoid magnesium atom from being present in P in the form of impurity
In type semiconductor layer, the crystal quality of p type semiconductor layer is improved, further increases the luminous efficiency of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of process of the growing method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure；
Fig. 2 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the first p type semiconductor layer and the second p type semiconductor layer provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of growing methods of gallium nitride based LED epitaxial slice.Fig. 1 is the present invention
A kind of flow chart of the growing method for gallium nitride based LED epitaxial slice that embodiment provides.Referring to Fig. 1, the growing method
Include:
Step 101: a substrate is provided.
Specifically, the material of substrate can use sapphire (main material is aluminum oxide), if crystal orientation is [0001]
Sapphire.
Specifically, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 1 minute~
It makes annealing treatment within 10 minutes (preferably 5 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 102: growing n type semiconductor layer on substrate.
Specifically, the material of n type semiconductor layer can use the gallium nitride of n-type doping (such as silicon).
Further, the thickness of n type semiconductor layer can be 1 μm~5 μm, preferably 3 μm；N-type is mixed in n type semiconductor layer
Miscellaneous dose of doping concentration can be 1018cm-3~1019cm-3, preferably 5*1018cm-3。
Specifically, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 100torr~500torr (preferably
300torr), n type semiconductor layer is grown on substrate.
Optionally, before step 102, which may include:
Using physical vapour deposition (PVD) (English: Physical Vapor Deposition, abbreviation: PVD), technology is on substrate
Form buffer layer.
Correspondingly, n type semiconductor layer is grown on the buffer layer.
Alleviate the stress and defect that lattice mismatch generates between substrate material and gallium nitride by setting buffer layer, and is nitrogen
Change the growth of gallium material epitaxy and nuclearing centre is provided.
Specifically, the material of buffer layer can use aluminium nitride or aluminium gallium nitride alloy.
Specifically, buffer layer is formed on the substrate using PVD technique, may include:
Controlled at 400 DEG C~800 DEG C (preferably 600 DEG C), pressure is 4torr~6torr (preferably 5torr),
Sputtering power is 3000W~5000W (preferably 4000W), and buffer layer is formed on the substrate using magnetron sputtering technique.
Preferably, after buffer layer is formed on the substrate using PVD technique, which can also include:
Undoped gallium nitride layer is grown using MOCVD technology on the buffer layer.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
It is answered by be arranged that undoped gallium nitride layer further alleviates that lattice mismatch between substrate material and gallium nitride generates
Power and defect provide crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, the longitudinal growth of gallium nitride is carried out in buffer layer first, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer.
Further, the thickness of undoped gallium nitride layer can be 1 μm~5 μm, preferably 3 μm.
Specifically, undoped gallium nitride layer is grown using MOCVD technology on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), undoped gallium nitride layer is grown on the buffer layer.
Step 103: active layer is grown on n type semiconductor layer.
Specifically, active layer may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum are built and handed over
For being stacked；The material of Quantum Well can use InGaN (InGaN), such as InxGa1-xN, 0 < x < 1, the material that quantum is built
Material can use gallium nitride.
Further, the thickness of Quantum Well can be 2nm~3nm, preferably 2.5nm；The thickness that quantum is built can be 9nm
~20nm, preferably 15nm；The quantity of Quantum Well is identical as the quantity that quantum is built, and the quantity that quantum is built can be 5~11,
Preferably 8.
Specifically, which may include:
Active layer is grown on n type semiconductor layer；Wherein, the growth temperature of Quantum Well be 720 DEG C~829 DEG C (preferably
760 DEG C), pressure is 100torr~500torr (preferably 300torr)；The growth temperature that quantum is built is 850 DEG C~959 DEG C
(preferably 900 DEG C), pressure are 100torr~500torr (preferably 300torr).
Optionally, before step 104, which may include:
Using MOCVD technology on n type semiconductor layer growth stress releasing layer.
Correspondingly, active layer is grown on stress release layer.
It is discharged, is improved by the stress that setting stress release layer generates lattice mismatch between sapphire and gallium nitride
The crystal quality of active layer is conducive to electrons and holes and shines in active layer progress radiation recombination, improves the interior quantum effect of LED
Rate, and then improve the luminous efficiency of LED.
Specifically, the material of stress release layer can use gallium indium aluminum nitrogen (AlInGaN), can be released effectively sapphire and
The stress that gallium nitride crystal lattice mismatch generates, improves the crystal quality of epitaxial wafer, improves the luminous efficiency of LED.
Preferably, the molar content of aluminium component can be less than or equal to 0.2 in stress release layer, indium group in stress release layer
The molar content divided can be less than or equal to 0.05, to avoid adverse effect is caused.
Further, the thickness of stress release layer can be 50nm~500nm, preferably 300nm.
Specifically, using MOCVD technology on n type semiconductor layer growth stress releasing layer, may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Step 104: in the growth atmosphere formed by hydrogen, one p type semiconductor layer of growth regulation on active layer.
Step 105: in the growth atmosphere formed by nitrogen, two P-type semiconductor of growth regulation on the first p type semiconductor layer
Layer.
Wherein, the first p type semiconductor layer and the second p type semiconductor layer include multiple magnesium nitride layers and multiple magnesium-doped
Gallium nitride layer, multiple magnesium nitride layers and multiple alternately laminated settings of magnesium-doped gallium nitride layer.
The embodiment of the present invention passes through first one p type semiconductor layer of growth regulation in the growth atmosphere formed by hydrogen, hydrogen tool
There is corrasion, the first p type semiconductor layer can be handled, effectively extends to p-type in cover epitaxial process and partly lead
The defect of body layer substantially improves the crystal quality of p type semiconductor layer；Two P of growth regulation in the growth atmosphere formed by nitrogen again
Type semiconductor layer can form Mg-H key with magnesium atom to avoid the hydrogen atom in the growth atmosphere formed by hydrogen, be equivalent to increasing
Add the incorporation of magnesium in p type semiconductor layer, that is, improves the activation efficiency of magnesium in p type semiconductor layer.First p type semiconductor layer
With the second p type semiconductor layer activation efficiency from the crystal quality of p type semiconductor layer and magnesium atom in p type semiconductor layer respectively
Two aspects improve p type semiconductor layer, can effectively improve the hole concentration in p type semiconductor layer, final to improve
The luminous efficiency of LED.And first p type semiconductor layer and the second p type semiconductor layer include alternately laminated setting multiple nitrogen
Change magnesium layer and multiple magnesium-doped gallium nitride layers, magnesium atom form displacement atom in gallium nitride, it can be with Effective Doping in p-type half
In conductor layer, the ratio of the magnesium atom in gallium position is improved, while reducing the magnesium atom of filling type, avoids magnesium atom with impurity
Form be present in p type semiconductor layer, improve the crystal quality of p type semiconductor layer, further increase the luminous efficiency of LED.
Optionally, the quantity of magnesium nitride layer and nitridation magnesium-doped in the first p type semiconductor layer in the first p type semiconductor layer
The quantity of gallium layer is identical；The quantity of magnesium nitride layer can be 5~10, preferably 8 in first p type semiconductor layer.
It, may be due to if the quantity of magnesium nitride layer and magnesium-doped gallium nitride layer is less than 5 in the first P-type semiconductor
The negligible amounts of magnesium nitride layer and magnesium-doped gallium nitride layer in first P-type semiconductor and p type semiconductor layer can not be effectively improved
Crystal quality；It, may if the quantity of magnesium nitride layer and magnesium-doped gallium nitride layer is greater than 10 in the first P-type semiconductor
Cause the thickness of P-type semiconductor thicker, p type semiconductor layer extinction is serious, influences the light extraction efficiency of LED.
Optionally, the quantity of magnesium nitride layer and nitridation magnesium-doped in the second p type semiconductor layer in the second p type semiconductor layer
The quantity of gallium layer is identical；The quantity of magnesium nitride layer can be 5~10, preferably 8 in second p type semiconductor layer.
It, may be due to if the quantity of magnesium nitride layer and magnesium-doped gallium nitride layer is less than 5 in the second P-type semiconductor
The negligible amounts of magnesium nitride layer and magnesium-doped gallium nitride layer in second P-type semiconductor and p type semiconductor layer can not be effectively improved
Crystal quality；It, may if the quantity of magnesium nitride layer and magnesium-doped gallium nitride layer is greater than 10 in the second P-type semiconductor
Since the quantity of magnesium nitride layer and magnesium-doped gallium nitride layer is more and increase the complexity and reality of technique in the second P-type semiconductor
Ready-made.
Optionally, the thickness of magnesium nitride layer can be 1nm~3nm, preferably 2nm.
If the thickness of magnesium nitride layer is less than 1nm, it may can not effectively increase p-type because magnesium nitride layer is relatively thin and partly lead
The concentration in effective hole in body layer causes the luminous efficiency of LED to promote effect unobvious；If the thickness of magnesium nitride layer is greater than
3nm, then may be thicker due to magnesium nitride layer, and Mg is on the high side and influences the crystal structure of p type semiconductor layer.
Optionally, the thickness of magnesium-doped gallium nitride layer can be 4nm~7nm, preferably 5.5nm.
It, may and shadow relatively thin due to magnesium-doped gallium nitride layer if the thickness of magnesium-doped gallium nitride layer is less than 4nm
Ring the crystal structure for arriving p type semiconductor layer；If the thickness of magnesium-doped gallium nitride layer is greater than 7nm, may be due to magnesium-doped
Gallium nitride layer it is too thick and influence the cooperation with magnesium nitride layer, the dense of effective hole in p type semiconductor layer can not be effectively increased
Degree causes the luminous efficiency of LED to promote effect unobvious.
Optionally, the doping concentration of magnesium elements can be 10 in magnesium-doped gallium nitride layer20cm-3~3*1020cm-3, preferably
For 2*1020cm-3。
If the doping concentration of magnesium elements is less than 10 in magnesium-doped gallium nitride layer20cm-3, then may be due to magnesium-doped
The doping concentration of magnesium elements is smaller and the lattice between magnesium nitride layer is caused to mismatch in gallium nitride layer, reduces P-type semiconductor
The crystal quality of layer；If the doping concentration of magnesium elements is greater than 3*10 in magnesium-doped gallium nitride layer20cm-3, then may be due to mixing
The doping concentration of magnesium elements is larger and cause the impurity in p type semiconductor layer too many in the gallium nitride layer of miscellaneous magnesium, reduces p-type and partly leads
The crystal quality of body layer.
Optionally, the sum of thickness of the first p type semiconductor layer and the second p type semiconductor layer can be 100nm~200nm.
It, may be due to the if the sum of thickness of the first p type semiconductor layer and the second p type semiconductor layer is less than 100nm
The sum of the thickness of one p type semiconductor layer and the second p type semiconductor layer is smaller and sufficient amount of hole can not be provided for active layer,
Influence the luminous efficiency of LED；If the sum of thickness of the first p type semiconductor layer and the second p type semiconductor layer is greater than 200nm,
It then may cause that p type semiconductor layer is too thick, the extinction of p type semiconductor layer is more serious, influences the luminous efficiency of LED.
Optionally, the growth conditions of the first p type semiconductor layer can be identical with the second P-type semiconductor growth conditions, raw
Elongate member includes growth temperature and growth pressure.Using identical growth conditions, realize more convenient.
Preferably, the growth temperature of the first p type semiconductor layer can be 800 DEG C~1000 DEG C, the first p type semiconductor layer
Growth pressure can be 200torr~600torr.Cooperate growth temperature and growth pressure, the quality of the p type semiconductor layer of formation
Preferably.
Optionally, before step 104, which can also include:
Electronic barrier layer is grown on active layer using MOCVD technology.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
It avoids electron transition from providing in layer to hole with hole progress non-radiative recombination by the way that electronic barrier layer is arranged, reduces
The luminous efficiency of LED.
Specifically, the material of electronic barrier layer can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.1 < y < 0.5.
Further, the thickness of electronic barrier layer can be 20nm~100nm, preferably 60nm.
Specifically, electronic barrier layer is grown on active layer using MOCVD technology, may include:
Controlled at 700 DEG C~1000 DEG C (preferably 850 DEG C), pressure be 100torr~500torr (preferably
300torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer using MOCVD technology, which can also be wrapped
It includes:
Using MOCVD technology on active layer growing low temperature P-type layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Avoid the higher growth temperature of electronic barrier layer that the phosphide atom in active layer is caused to analyse by the way that low temperature P-type layer is arranged
Out, the luminous efficiency of light emitting diode is influenced.
Specifically, the material of low temperature P-type layer can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer can be 50nm~100nm, preferably 75nm；P-type is mixed in low temperature P-type layer
Miscellaneous dose of doping concentration can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Specifically, using MOCVD technology on active layer growing low temperature P-type layer, may include:
Controlled at 600 DEG C~800 DEG C (preferably 700 DEG C), pressure be 200torr~500torr (preferably
350torr), the growing low temperature P-type layer on active layer.
Optionally, after step 105, which can also include:
Contact layer is grown on p type semiconductor layer using MOCVD technology.
By setting contact layer to form Europe between the electrode or transparent conductive film that are formed in chip fabrication technique
Nurse contact.
Specifically, the material of p-type contact layer can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer can be 5nm~100nm, preferably 50nm；P-type is mixed in p-type contact layer
Miscellaneous dose of doping concentration can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
Specifically, contact layer is grown on p type semiconductor layer using MOCVD technology, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), contact layer is grown on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, it is suitable for using nitrogen shown in FIG. 1
The growing method for changing gallium based LED epitaxial slice is grown.Fig. 2 is a kind of gallium nitride base provided in an embodiment of the present invention
The structural schematic diagram of LED epitaxial slice.Referring to fig. 2, the gallium nitride based LED epitaxial slice substrate 10, N-type are partly led
Body layer 20, active layer 30, the first p type semiconductor layer 41 and the second p type semiconductor layer 42, n type semiconductor layer 20, active layer 30,
First p type semiconductor layer 41 and the second p type semiconductor layer 42 are sequentially laminated on substrate 10.
In the present embodiment, the first p type semiconductor layer 41 is grown in the growth atmosphere formed by hydrogen, the second p-type half
Conductor layer 42 is grown in the growth atmosphere formed by nitrogen.Fig. 3 be the first p type semiconductor layer provided in an embodiment of the present invention and
The structural schematic diagram of second p type semiconductor layer.Referring to Fig. 3, the first p type semiconductor layer 41 and the second p type semiconductor layer 42 are wrapped
Include multiple magnesium nitride layers 43 and multiple magnesium-doped gallium nitride layers 44, multiple magnesium nitride layers 43 and multiple magnesium-doped gallium nitride layers
44 alternately laminated settings.
Optionally, as shown in Fig. 2, the LED epitaxial slice can also include buffer layer 51, the setting of buffer layer 51 exists
Between substrate 10 and n type semiconductor layer 21.
Preferably, undoped as shown in Fig. 2, the LED epitaxial slice can also include undoped gallium nitride layer 52
Gallium nitride layer 52 is arranged between buffer layer 51 and n type semiconductor layer 21.
Optionally, as shown in Fig. 2, the LED epitaxial slice can also include stress release layer 60, stress release layer
60 are arranged between n type semiconductor layer 22 and active layer 30.
Optionally, as shown in Fig. 2, the LED epitaxial slice can also include electronic barrier layer 71, electronic barrier layer
71 are arranged between active layer 30 and p type semiconductor layer 40.
Preferably, as shown in Fig. 2, the LED epitaxial slice can also include low temperature P-type layer 72, low temperature P-type layer 72
It is arranged between active layer 30 and electronic barrier layer 71.
Optionally, as shown in Fig. 2, the LED epitaxial slice can also include contact layer 80, contact layer 80 is arranged in P
In type semiconductor layer 40.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of growing method of gallium nitride based LED epitaxial slice, which is characterized in that the growing method includes:
One substrate is provided；
N type semiconductor layer is grown over the substrate；
Active layer is grown on the n type semiconductor layer；
In the growth atmosphere formed by hydrogen, one p type semiconductor layer of growth regulation on the active layer；
In the growth atmosphere formed by nitrogen, two p type semiconductor layer of growth regulation on first p type semiconductor layer；
Wherein, first p type semiconductor layer and second p type semiconductor layer include multiple magnesium nitride layers and multiple doping
The gallium nitride layer of magnesium, the multiple magnesium nitride layer and the multiple alternately laminated setting of magnesium-doped gallium nitride layer.
2. growing method according to claim 1, which is characterized in that magnesium nitride layer in first p type semiconductor layer
Quantity is identical as the quantity of gallium nitride layer magnesium-doped in first p type semiconductor layer；Nitrogen in first p type semiconductor layer
The quantity for changing magnesium layer is 5~10.
3. growing method according to claim 1 or 2, which is characterized in that magnesium nitride layer in second p type semiconductor layer
Quantity it is identical as the quantity of gallium nitride layer magnesium-doped in second p type semiconductor layer；In second p type semiconductor layer
The quantity of magnesium nitride layer is 5~10.
4. growing method according to claim 1 or 2, which is characterized in that the magnesium nitride layer with a thickness of 1nm~3nm.
5. growing method according to claim 1 or 2, which is characterized in that the magnesium-doped gallium nitride layer with a thickness of
4nm~7nm.
6. growing method according to claim 1 or 2, which is characterized in that magnesium elements in the magnesium-doped gallium nitride layer
Doping concentration be 1020cm-3~3*1020cm-3。
7. growing method according to claim 1 or 2, which is characterized in that first p type semiconductor layer and described second
The sum of thickness of p type semiconductor layer is 100nm~200nm.
8. growing method according to claim 1 or 2, which is characterized in that the growth conditions of second p type semiconductor layer
Identical as the first P-type semiconductor growth conditions, the growth conditions includes growth temperature and growth pressure.
9. growing method according to claim 8, which is characterized in that the growth temperature of first p type semiconductor layer is
800 DEG C~1000 DEG C, the growth pressure of first p type semiconductor layer is 200torr~600torr.
10. a kind of gallium nitride based LED epitaxial slice, which is characterized in that the gallium nitride based LED epitaxial slice packet
Include substrate, n type semiconductor layer, active layer, the first p type semiconductor layer and the second p type semiconductor layer, the n type semiconductor layer, institute
It states active layer, first p type semiconductor layer and second p type semiconductor layer to stack gradually over the substrate, described
One p type semiconductor layer is grown in the growth atmosphere formed by hydrogen, and second p type semiconductor layer is in the life formed by nitrogen
It is grown in long atmosphere；First p type semiconductor layer and second p type semiconductor layer include multiple magnesium nitride layers and multiple
Magnesium-doped gallium nitride layer, the multiple magnesium nitride layer and the multiple alternately laminated setting of magnesium-doped gallium nitride layer.
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