CN101866862A - 半导体集成电路器件的制造方法 - Google Patents

半导体集成电路器件的制造方法 Download PDF

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Publication number
CN101866862A
CN101866862A CN201010155938A CN201010155938A CN101866862A CN 101866862 A CN101866862 A CN 101866862A CN 201010155938 A CN201010155938 A CN 201010155938A CN 201010155938 A CN201010155938 A CN 201010155938A CN 101866862 A CN101866862 A CN 101866862A
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manufacturing
integrated circuit
chip
semiconductor integrated
circuit device
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CN201010155938A
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Chinese (zh)
Inventor
牧浩
伊势诚
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07553—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/537—Multiple bond wires having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
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    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
CN201010155938A 2009-04-09 2010-04-08 半导体集成电路器件的制造方法 Pending CN101866862A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009094517A JP2010245412A (ja) 2009-04-09 2009-04-09 半導体集積回路装置の製造方法
JP2009-094517 2009-04-09

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CN101866862A true CN101866862A (zh) 2010-10-20

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US (2) US8450150B2 (enExample)
JP (1) JP2010245412A (enExample)
KR (1) KR20100112536A (enExample)
CN (1) CN101866862A (enExample)
TW (1) TW201108336A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760666A (zh) * 2012-07-05 2012-10-31 西安永电电气有限责任公司 用于igbt的键合真空吸附工装
CN110024094A (zh) * 2016-10-06 2019-07-16 株式会社新川 半导体芯片的封装装置以及半导体装置的制造方法
CN110024093A (zh) * 2016-09-30 2019-07-16 株式会社新川 半导体装置的制造方法以及封装装置
CN110476236A (zh) * 2017-01-30 2019-11-19 株式会社新川 安装装置以及安装系统

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JP5207868B2 (ja) * 2008-02-08 2013-06-12 ルネサスエレクトロニクス株式会社 半導体装置
KR101563630B1 (ko) * 2009-09-17 2015-10-28 에스케이하이닉스 주식회사 반도체 패키지
JP5579879B2 (ja) * 2010-03-18 2014-08-27 コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッド オフセットダイスタッキングを用いたマルチチップパッケージ
US8809875B2 (en) 2011-11-18 2014-08-19 LuxVue Technology Corporation Micro light emitting diode
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8967452B2 (en) * 2012-04-17 2015-03-03 Asm Technology Singapore Pte Ltd Thermal compression bonding of semiconductor chips
KR102231293B1 (ko) 2014-02-10 2021-03-23 삼성전자주식회사 다이 본딩 장치
US9685187B1 (en) * 2014-09-26 2017-06-20 Western Digital (Fremont), Llc Bonding tool and method for high accuracy chip-to-chip bonding
US9647189B2 (en) * 2015-01-26 2017-05-09 Cooledge Lighting Inc. Methods for adhesive bonding of electronic devices
KR102341750B1 (ko) 2015-06-30 2021-12-23 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
KR20170009750A (ko) * 2015-07-15 2017-01-25 서울바이오시스 주식회사 발광 다이오드 패키지 제조 방법
US11171114B2 (en) * 2015-12-02 2021-11-09 Intel Corporation Die stack with cascade and vertical connections
US10199351B2 (en) * 2015-12-30 2019-02-05 Skyworks Solutions, Inc. Method and device for improved die bonding
KR102579876B1 (ko) 2016-02-22 2023-09-18 삼성전자주식회사 반도체 패키지
JP6316873B2 (ja) * 2016-05-31 2018-04-25 株式会社新川 ダイの実装方法
US11227787B2 (en) 2017-07-14 2022-01-18 Industrial Technology Research Institute Transfer support and transfer module
US10431483B2 (en) 2017-07-14 2019-10-01 Industrial Technology Research Institute Transfer support and transfer module
KR102372519B1 (ko) * 2017-09-29 2022-03-10 가부시키가이샤 신가와 실장 장치
TWI807348B (zh) * 2021-06-21 2023-07-01 矽品精密工業股份有限公司 覆晶作業及其應用之接合設備
JP2023039555A (ja) 2021-09-09 2023-03-22 キオクシア株式会社 半導体装置の製造方法

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CN101207114A (zh) * 2006-12-20 2008-06-25 富士通株式会社 半导体器件及其制造方法
JP2009065034A (ja) * 2007-09-07 2009-03-26 Renesas Technology Corp 半導体装置の製造方法

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CN1214464C (zh) * 1998-10-14 2005-08-10 株式会社日立制作所 半导体器件及其制造方法
MY153208A (en) 2006-09-15 2015-01-29 Lintec Corp Process for manufacturing semiconductor devices
JP2008098608A (ja) * 2006-09-15 2008-04-24 Lintec Corp 半導体装置の製造方法
JP5032231B2 (ja) 2007-07-23 2012-09-26 リンテック株式会社 半導体装置の製造方法
JP5538682B2 (ja) * 2008-03-06 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法

Patent Citations (2)

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CN101207114A (zh) * 2006-12-20 2008-06-25 富士通株式会社 半导体器件及其制造方法
JP2009065034A (ja) * 2007-09-07 2009-03-26 Renesas Technology Corp 半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760666A (zh) * 2012-07-05 2012-10-31 西安永电电气有限责任公司 用于igbt的键合真空吸附工装
CN110024093A (zh) * 2016-09-30 2019-07-16 株式会社新川 半导体装置的制造方法以及封装装置
CN110024094A (zh) * 2016-10-06 2019-07-16 株式会社新川 半导体芯片的封装装置以及半导体装置的制造方法
CN110024094B (zh) * 2016-10-06 2023-07-14 株式会社新川 封装装置以及半导体装置的制造方法
CN110476236A (zh) * 2017-01-30 2019-11-19 株式会社新川 安装装置以及安装系统
CN110476236B (zh) * 2017-01-30 2023-08-25 株式会社新川 安装装置以及安装系统

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US8450150B2 (en) 2013-05-28
US20130330879A1 (en) 2013-12-12
KR20100112536A (ko) 2010-10-19
TW201108336A (en) 2011-03-01
US20100261312A1 (en) 2010-10-14
JP2010245412A (ja) 2010-10-28

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Application publication date: 20101020