CN101828275A - Led封装基板以及使用该led封装基板的led封装 - Google Patents
Led封装基板以及使用该led封装基板的led封装 Download PDFInfo
- Publication number
- CN101828275A CN101828275A CN200880112148.7A CN200880112148A CN101828275A CN 101828275 A CN101828275 A CN 101828275A CN 200880112148 A CN200880112148 A CN 200880112148A CN 101828275 A CN101828275 A CN 101828275A
- Authority
- CN
- China
- Prior art keywords
- electrode
- led
- packaging
- base plate
- writing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 238000004806 packaging method and process Methods 0.000 claims description 67
- 238000005538 encapsulation Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 9
- 229910017083 AlN Inorganic materials 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000009434 installation Methods 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007272206 | 2007-10-19 | ||
JP2007-272206 | 2007-10-19 | ||
PCT/JP2008/068749 WO2009051178A1 (ja) | 2007-10-19 | 2008-10-16 | Ledパッケージ基板およびそれを用いたledパッケージ |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101828275A true CN101828275A (zh) | 2010-09-08 |
Family
ID=40567440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880112148.7A Pending CN101828275A (zh) | 2007-10-19 | 2008-10-16 | Led封装基板以及使用该led封装基板的led封装 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2009051178A1 (ja) |
KR (1) | KR20100093527A (ja) |
CN (1) | CN101828275A (ja) |
TW (1) | TW200937681A (ja) |
WO (1) | WO2009051178A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130278A (zh) * | 2010-12-31 | 2011-07-20 | 昆山琉明光电有限公司 | 发光二极管封装 |
CN102306695A (zh) * | 2011-09-09 | 2012-01-04 | 福建省万邦光电科技有限公司 | Led光源单杯模块用镀陶瓷层底座 |
CN102563452A (zh) * | 2010-09-29 | 2012-07-11 | 三星电子株式会社 | 具有发光二极管封装件的背光组件及具有其的显示装置 |
CN103022332A (zh) * | 2012-11-29 | 2013-04-03 | 芜湖德豪润达光电科技有限公司 | 倒装基板及其制造方法及基于该倒装基板的led封装结构 |
WO2015032256A1 (en) * | 2013-09-06 | 2015-03-12 | Yung Pun Cheng | Floating heat sink support with copper sheets and led package assembly for led flip chip package |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101610378B1 (ko) * | 2009-09-30 | 2016-04-08 | 엘지이노텍 주식회사 | 발광장치 |
JP5742844B2 (ja) | 2010-07-07 | 2015-07-01 | 旭硝子株式会社 | 発光素子用反射枠体、発光素子用基板、および発光装置 |
JP2012084786A (ja) * | 2010-10-14 | 2012-04-26 | Showa Denko Kk | Ledパッケージ |
JP2012094679A (ja) * | 2010-10-27 | 2012-05-17 | Showa Denko Kk | 基板の製造方法 |
WO2012066461A1 (en) * | 2010-11-19 | 2012-05-24 | Koninklijke Philips Electronics N.V. | Islanded carrier for light emitting device |
CN102692592B (zh) * | 2011-03-22 | 2014-08-27 | 展晶科技(深圳)有限公司 | 发光二极管测试方法及在该方法中使用的发光二极管型材 |
US8796665B2 (en) | 2011-08-26 | 2014-08-05 | Micron Technology, Inc. | Solid state radiation transducers and methods of manufacturing |
JP2013197310A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | 発光装置 |
KR101340250B1 (ko) * | 2012-09-20 | 2013-12-10 | 주식회사 효성 | 유전체층의 열 방출 특성이 개선된 led 패키지 및 led 어레이 |
JP5379320B1 (ja) * | 2012-10-15 | 2013-12-25 | 有限会社 ナプラ | 発光装置 |
KR101356475B1 (ko) * | 2013-03-27 | 2014-01-29 | 한국생산기술연구원 | 고성능 엘이디 기판 및 이의 제조방법 |
TWI566441B (zh) * | 2014-04-08 | 2017-01-11 | 新世紀光電股份有限公司 | 發光二極體裝置及用於封裝發光二極體之支架陣列 |
CN106164334B (zh) * | 2014-04-15 | 2019-11-29 | 住友金属矿山株式会社 | 包覆膜的形成方法以及发光二极管器件的制造方法 |
JP6539956B2 (ja) * | 2014-08-08 | 2019-07-10 | 株式会社カネカ | リードフレーム、樹脂成型体、表面実装型電子部品、表面実装型発光装置、及びリードフレーム製造方法 |
US9601673B2 (en) | 2014-11-21 | 2017-03-21 | Cree, Inc. | Light emitting diode (LED) components including LED dies that are directly attached to lead frames |
CN105938866A (zh) * | 2016-06-13 | 2016-09-14 | 开发晶照明(厦门)有限公司 | Led支架和led封装结构 |
JP6925694B2 (ja) * | 2017-04-12 | 2021-08-25 | シチズン電子株式会社 | 発光装置 |
FR3073320B1 (fr) * | 2017-11-08 | 2019-11-22 | Photonis France | Procede de realisation d'une liaison electrique etanche dans un boitier ceramique et tube intensificateur d'image comportant un tel boitier |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3312723B2 (ja) * | 1996-10-09 | 2002-08-12 | 松下電器産業株式会社 | 熱伝導シート状物とその製造方法及びそれを用いた熱伝導基板とその製造方法 |
JP3410935B2 (ja) * | 1997-08-05 | 2003-05-26 | オーツタイヤ株式会社 | 金属製クローラ用弾性パッド及び金属製クローラ |
JP4075268B2 (ja) * | 2000-02-24 | 2008-04-16 | 松下電工株式会社 | 回路基板の製造方法 |
JP4085917B2 (ja) * | 2003-07-16 | 2008-05-14 | 松下電工株式会社 | 高熱伝導性発光素子用回路部品及び高放熱モジュール |
JP4674487B2 (ja) * | 2005-04-25 | 2011-04-20 | パナソニック電工株式会社 | 表面実装型発光装置 |
JP2007073575A (ja) * | 2005-09-05 | 2007-03-22 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
JP2007250979A (ja) * | 2006-03-17 | 2007-09-27 | Zeniya Sangyo Kk | 半導体パッケージ |
-
2008
- 2008-10-16 JP JP2009538130A patent/JPWO2009051178A1/ja not_active Withdrawn
- 2008-10-16 KR KR1020107010899A patent/KR20100093527A/ko not_active Application Discontinuation
- 2008-10-16 WO PCT/JP2008/068749 patent/WO2009051178A1/ja active Application Filing
- 2008-10-16 CN CN200880112148.7A patent/CN101828275A/zh active Pending
- 2008-10-17 TW TW97139947A patent/TW200937681A/zh unknown
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102563452A (zh) * | 2010-09-29 | 2012-07-11 | 三星电子株式会社 | 具有发光二极管封装件的背光组件及具有其的显示装置 |
US8870402B2 (en) | 2010-09-29 | 2014-10-28 | Samsung Display Co., Ltd. | Backlight assembly having light emitting diode package and display apparatus having the same |
CN102563452B (zh) * | 2010-09-29 | 2015-12-09 | 三星显示有限公司 | 具有发光二极管封装件的背光组件及具有其的显示装置 |
CN102130278A (zh) * | 2010-12-31 | 2011-07-20 | 昆山琉明光电有限公司 | 发光二极管封装 |
CN102130278B (zh) * | 2010-12-31 | 2013-04-03 | 昆山琉明光电有限公司 | 发光二极管封装 |
CN102306695A (zh) * | 2011-09-09 | 2012-01-04 | 福建省万邦光电科技有限公司 | Led光源单杯模块用镀陶瓷层底座 |
CN103022332A (zh) * | 2012-11-29 | 2013-04-03 | 芜湖德豪润达光电科技有限公司 | 倒装基板及其制造方法及基于该倒装基板的led封装结构 |
CN103022332B (zh) * | 2012-11-29 | 2015-10-21 | 芜湖德豪润达光电科技有限公司 | 倒装基板及其制造方法及基于该倒装基板的led封装结构 |
WO2015032256A1 (en) * | 2013-09-06 | 2015-03-12 | Yung Pun Cheng | Floating heat sink support with copper sheets and led package assembly for led flip chip package |
US9379300B2 (en) | 2013-09-06 | 2016-06-28 | Yung Pun Cheng | Floating heat sink support with copper sheets and LED package assembly for LED flip chip package |
Also Published As
Publication number | Publication date |
---|---|
KR20100093527A (ko) | 2010-08-25 |
JPWO2009051178A1 (ja) | 2011-03-03 |
TW200937681A (en) | 2009-09-01 |
WO2009051178A1 (ja) | 2009-04-23 |
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