CN101814476B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN101814476B
CN101814476B CN201010117406.XA CN201010117406A CN101814476B CN 101814476 B CN101814476 B CN 101814476B CN 201010117406 A CN201010117406 A CN 201010117406A CN 101814476 B CN101814476 B CN 101814476B
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CN
China
Prior art keywords
via hole
metal wiring
buffer layer
stress buffer
metal
Prior art date
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Expired - Fee Related
Application number
CN201010117406.XA
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English (en)
Chinese (zh)
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CN101814476A (zh
Inventor
近江俊彦
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Ablic Inc
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Seiko Instruments Inc
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Publication of CN101814476A publication Critical patent/CN101814476A/zh
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Publication of CN101814476B publication Critical patent/CN101814476B/zh
Expired - Fee Related legal-status Critical Current
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201010117406.XA 2009-02-19 2010-02-12 半导体装置 Expired - Fee Related CN101814476B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-036590 2009-02-19
JP2009036590A JP5249080B2 (ja) 2009-02-19 2009-02-19 半導体装置

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CN101814476A CN101814476A (zh) 2010-08-25
CN101814476B true CN101814476B (zh) 2014-08-27

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US (1) US20100207271A1 (enExample)
JP (1) JP5249080B2 (enExample)
KR (1) KR20100094943A (enExample)
CN (1) CN101814476B (enExample)
TW (1) TWI501364B (enExample)

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KR102012935B1 (ko) 2012-06-13 2019-08-21 삼성전자주식회사 전기적 연결 구조 및 그의 제조방법
KR20140041975A (ko) 2012-09-25 2014-04-07 삼성전자주식회사 범프 구조체 및 이를 포함하는 전기적 연결 구조체
US8772151B2 (en) 2012-09-27 2014-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Passivation scheme
KR102122456B1 (ko) 2013-12-20 2020-06-12 삼성전자주식회사 실리콘 관통 비아 플러그들을 갖는 반도체 소자 및 이를 포함하는 반도체 패키지
KR102212559B1 (ko) 2014-08-20 2021-02-08 삼성전자주식회사 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지
JP6565238B2 (ja) * 2015-03-17 2019-08-28 セイコーエプソン株式会社 液体噴射ヘッド
CN109309057A (zh) * 2017-07-26 2019-02-05 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
DE102018120491A1 (de) * 2018-08-22 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
KR102824211B1 (ko) * 2019-12-27 2025-06-26 삼성전자주식회사 반도체 패키지
KR102765303B1 (ko) 2019-12-31 2025-02-07 삼성전자주식회사 반도체 패키지
WO2025115631A1 (ja) * 2023-11-30 2025-06-05 ローム株式会社 半導体素子および半導体装置

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Publication number Priority date Publication date Assignee Title
US6451681B1 (en) * 1999-10-04 2002-09-17 Motorola, Inc. Method of forming copper interconnection utilizing aluminum capping film

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