KR20100094943A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR20100094943A KR20100094943A KR1020100013796A KR20100013796A KR20100094943A KR 20100094943 A KR20100094943 A KR 20100094943A KR 1020100013796 A KR1020100013796 A KR 1020100013796A KR 20100013796 A KR20100013796 A KR 20100013796A KR 20100094943 A KR20100094943 A KR 20100094943A
- Authority
- KR
- South Korea
- Prior art keywords
- buffer layer
- stress buffer
- metal wiring
- film
- via hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2009-036590 | 2009-02-19 | ||
| JP2009036590A JP5249080B2 (ja) | 2009-02-19 | 2009-02-19 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100094943A true KR20100094943A (ko) | 2010-08-27 |
Family
ID=42559187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100013796A Ceased KR20100094943A (ko) | 2009-02-19 | 2010-02-16 | 반도체 장치 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20100207271A1 (enExample) |
| JP (1) | JP5249080B2 (enExample) |
| KR (1) | KR20100094943A (enExample) |
| CN (1) | CN101814476B (enExample) |
| TW (1) | TWI501364B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9230897B2 (en) | 2013-12-20 | 2016-01-05 | Samsung Electronics Co., Ltd. | Semiconductor devices having through-substrate via plugs and semiconductor packages including the same |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102012935B1 (ko) | 2012-06-13 | 2019-08-21 | 삼성전자주식회사 | 전기적 연결 구조 및 그의 제조방법 |
| KR20140041975A (ko) | 2012-09-25 | 2014-04-07 | 삼성전자주식회사 | 범프 구조체 및 이를 포함하는 전기적 연결 구조체 |
| US8772151B2 (en) | 2012-09-27 | 2014-07-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation scheme |
| KR102212559B1 (ko) | 2014-08-20 | 2021-02-08 | 삼성전자주식회사 | 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지 |
| JP6565238B2 (ja) * | 2015-03-17 | 2019-08-28 | セイコーエプソン株式会社 | 液体噴射ヘッド |
| CN109309057A (zh) * | 2017-07-26 | 2019-02-05 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| DE102018120491A1 (de) * | 2018-08-22 | 2020-02-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils |
| KR102824211B1 (ko) * | 2019-12-27 | 2025-06-26 | 삼성전자주식회사 | 반도체 패키지 |
| KR102765303B1 (ko) | 2019-12-31 | 2025-02-07 | 삼성전자주식회사 | 반도체 패키지 |
| WO2025115631A1 (ja) * | 2023-11-30 | 2025-06-05 | ローム株式会社 | 半導体素子および半導体装置 |
Family Cites Families (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4087314A (en) * | 1976-09-13 | 1978-05-02 | Motorola, Inc. | Bonding pedestals for semiconductor devices |
| JPS60117633A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 半導体装置 |
| US5134460A (en) * | 1986-08-11 | 1992-07-28 | International Business Machines Corporation | Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding |
| KR910006967B1 (ko) * | 1987-11-18 | 1991-09-14 | 가시오 게이상기 가부시기가이샤 | 반도체 장치의 범프 전극 구조 및 그 형성 방법 |
| US5719448A (en) * | 1989-03-07 | 1998-02-17 | Seiko Epson Corporation | Bonding pad structures for semiconductor integrated circuits |
| US5027253A (en) * | 1990-04-09 | 1991-06-25 | Ibm Corporation | Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards |
| US5136364A (en) * | 1991-06-12 | 1992-08-04 | National Semiconductor Corporation | Semiconductor die sealing |
| JPH06204344A (ja) * | 1992-12-25 | 1994-07-22 | Hitachi Denshi Ltd | 半導体装置の製造方法 |
| JP2596331B2 (ja) * | 1993-09-08 | 1997-04-02 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP3217624B2 (ja) * | 1994-11-12 | 2001-10-09 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置 |
| JP3660799B2 (ja) * | 1997-09-08 | 2005-06-15 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| US5943597A (en) * | 1998-06-15 | 1999-08-24 | Motorola, Inc. | Bumped semiconductor device having a trench for stress relief |
| US6077726A (en) * | 1998-07-30 | 2000-06-20 | Motorola, Inc. | Method and apparatus for stress relief in solder bump formation on a semiconductor device |
| JP3408172B2 (ja) * | 1998-12-10 | 2003-05-19 | 三洋電機株式会社 | チップサイズパッケージ及びその製造方法 |
| US8021976B2 (en) * | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US6756295B2 (en) * | 1998-12-21 | 2004-06-29 | Megic Corporation | Chip structure and process for forming the same |
| US6479900B1 (en) * | 1998-12-22 | 2002-11-12 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6011314A (en) * | 1999-02-01 | 2000-01-04 | Hewlett-Packard Company | Redistribution layer and under bump material structure for converting periphery conductive pads to an array of solder bumps |
| JP3846550B2 (ja) * | 1999-03-16 | 2006-11-15 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| US6133136A (en) * | 1999-05-19 | 2000-10-17 | International Business Machines Corporation | Robust interconnect structure |
| US6387734B1 (en) * | 1999-06-11 | 2002-05-14 | Fujikura Ltd. | Semiconductor package, semiconductor device, electronic device and production method for semiconductor package |
| US6391780B1 (en) * | 1999-08-23 | 2002-05-21 | Taiwan Semiconductor Manufacturing Company | Method to prevent copper CMP dishing |
| JP3387083B2 (ja) * | 1999-08-27 | 2003-03-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US6451681B1 (en) * | 1999-10-04 | 2002-09-17 | Motorola, Inc. | Method of forming copper interconnection utilizing aluminum capping film |
| US6803302B2 (en) * | 1999-11-22 | 2004-10-12 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device having a mechanically robust pad interface |
| JP2001196413A (ja) * | 2000-01-12 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置、該半導体装置の製造方法、cmp装置、及びcmp方法 |
| US6555908B1 (en) * | 2000-02-10 | 2003-04-29 | Epic Technologies, Inc. | Compliant, solderable input/output bump structures |
| JP3651765B2 (ja) * | 2000-03-27 | 2005-05-25 | 株式会社東芝 | 半導体装置 |
| US6300234B1 (en) * | 2000-06-26 | 2001-10-09 | Motorola, Inc. | Process for forming an electrical device |
| US6560862B1 (en) * | 2001-02-06 | 2003-05-13 | Taiwan Semiconductor Manufacturing Company | Modified pad for copper/low-k |
| TW594993B (en) * | 2001-02-16 | 2004-06-21 | Sanyo Electric Co | Semiconductor device and manufacturing process therefor |
| JP2003031576A (ja) * | 2001-07-17 | 2003-01-31 | Nec Corp | 半導体素子及びその製造方法 |
| JP2003031575A (ja) * | 2001-07-17 | 2003-01-31 | Nec Corp | 半導体装置及びその製造方法 |
| US20030116845A1 (en) * | 2001-12-21 | 2003-06-26 | Bojkov Christo P. | Waferlevel method for direct bumping on copper pads in integrated circuits |
| US6844631B2 (en) * | 2002-03-13 | 2005-01-18 | Freescale Semiconductor, Inc. | Semiconductor device having a bond pad and method therefor |
| JP2003318324A (ja) * | 2002-04-26 | 2003-11-07 | Sony Corp | 半導体装置 |
| KR20040061970A (ko) * | 2002-12-31 | 2004-07-07 | 동부전자 주식회사 | 반도체소자의 패드 형성방법 |
| TWI225899B (en) * | 2003-02-18 | 2005-01-01 | Unitive Semiconductor Taiwan C | Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer |
| US7244671B2 (en) * | 2003-07-25 | 2007-07-17 | Unitive International Limited | Methods of forming conductive structures including titanium-tungsten base layers and related structures |
| TWI224377B (en) * | 2003-11-14 | 2004-11-21 | Ind Tech Res Inst | Wafer level chip scale packaging structure and method of fabrication the same |
| JP3973624B2 (ja) * | 2003-12-24 | 2007-09-12 | 富士通株式会社 | 高周波デバイス |
| US7176583B2 (en) * | 2004-07-21 | 2007-02-13 | International Business Machines Corporation | Damascene patterning of barrier layer metal for C4 solder bumps |
| DE102004047730B4 (de) * | 2004-09-30 | 2017-06-22 | Advanced Micro Devices, Inc. | Ein Verfahren zum Dünnen von Halbleitersubstraten zur Herstellung von dünnen Halbleiterplättchen |
| EP1815515A4 (en) * | 2004-10-29 | 2009-03-11 | Flipchip Internat L L C | SEMICONDUCTOR COMPONENT SEALING WITH BULB HAVING A POLYMER LAYER |
| US20060128072A1 (en) * | 2004-12-13 | 2006-06-15 | Lsi Logic Corporation | Method of protecting fuses in an integrated circuit die |
| JP4777644B2 (ja) * | 2004-12-24 | 2011-09-21 | Okiセミコンダクタ株式会社 | 半導体装置およびその製造方法 |
| TWI245345B (en) * | 2005-02-17 | 2005-12-11 | Touch Micro System Tech | Method of forming a wear-resistant dielectric layer |
| JP4097660B2 (ja) * | 2005-04-06 | 2008-06-11 | シャープ株式会社 | 半導体装置 |
| US7427565B2 (en) * | 2005-06-30 | 2008-09-23 | Intel Corporation | Multi-step etch for metal bump formation |
| JP2007073681A (ja) * | 2005-09-06 | 2007-03-22 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US7566650B2 (en) * | 2005-09-23 | 2009-07-28 | Stats Chippac Ltd. | Integrated circuit solder bumping system |
| US7518211B2 (en) * | 2005-11-11 | 2009-04-14 | United Microelectronics Corp. | Chip and package structure |
| TWI339419B (en) * | 2005-12-05 | 2011-03-21 | Megica Corp | Semiconductor chip |
| WO2007074529A1 (ja) * | 2005-12-27 | 2007-07-05 | Fujitsu Limited | 半導体装置 |
| KR100703559B1 (ko) * | 2005-12-28 | 2007-04-03 | 동부일렉트로닉스 주식회사 | 듀얼다마신 구조를 가지는 반도체 소자 및 그 제조방법 |
| KR100870820B1 (ko) * | 2005-12-29 | 2008-11-27 | 매그나칩 반도체 유한회사 | 이미지 센서 및 그의 제조방법 |
| JP2006165595A (ja) * | 2006-02-03 | 2006-06-22 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2007220647A (ja) * | 2006-02-14 | 2007-08-30 | Samsung Sdi Co Ltd | 有機電界発光表示装置及びその製造方法 |
| JP4247690B2 (ja) * | 2006-06-15 | 2009-04-02 | ソニー株式会社 | 電子部品及その製造方法 |
| DE102006040115A1 (de) * | 2006-08-26 | 2008-03-20 | X-Fab Semiconductor Foundries Ag | Verfahren und Anordnung zur hermetisch dichten vertikalen elektrischen Durchkontaktierung von Deckscheiben der Mikrosystemtechnik |
| US7915737B2 (en) * | 2006-12-15 | 2011-03-29 | Sanyo Electric Co., Ltd. | Packing board for electronic device, packing board manufacturing method, semiconductor module, semiconductor module manufacturing method, and mobile device |
| CN100590859C (zh) * | 2007-01-16 | 2010-02-17 | 百慕达南茂科技股份有限公司 | 具有环状支撑物的凸块结构及其制造方法 |
| TW200836275A (en) * | 2007-02-16 | 2008-09-01 | Chipmos Technologies Inc | Packaging conductive structure and method for manufacturing the same |
| JP4668938B2 (ja) * | 2007-03-20 | 2011-04-13 | Okiセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
| TWM328763U (en) * | 2007-05-21 | 2008-03-11 | Univ Nat Taiwan | Structure of heat dissipation substrate |
| US7645701B2 (en) * | 2007-05-21 | 2010-01-12 | International Business Machines Corporation | Silicon-on-insulator structures for through via in silicon carriers |
| US20080308935A1 (en) * | 2007-06-18 | 2008-12-18 | Samsung Electronics Co., Ltd. | Semiconductor chip package, semiconductor package including semiconductor chip package, and method of fabricating semiconductor package |
| JP4585557B2 (ja) * | 2007-08-13 | 2010-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR100896883B1 (ko) * | 2007-08-16 | 2009-05-14 | 주식회사 동부하이텍 | 반도체칩, 이의 제조방법 및 이를 가지는 적층 패키지 |
| US7935408B2 (en) * | 2007-10-26 | 2011-05-03 | International Business Machines Corporation | Substrate anchor structure and method |
| JP5656341B2 (ja) * | 2007-10-29 | 2015-01-21 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置およびその製造方法 |
| JP5512082B2 (ja) * | 2007-12-17 | 2014-06-04 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置 |
| KR100929464B1 (ko) * | 2007-12-21 | 2009-12-02 | 주식회사 동부하이텍 | 반도체칩, 이의 제조 방법 및 반도체칩 적층 패키지 |
| US7985671B2 (en) * | 2008-12-29 | 2011-07-26 | International Business Machines Corporation | Structures and methods for improving solder bump connections in semiconductor devices |
-
2009
- 2009-02-19 JP JP2009036590A patent/JP5249080B2/ja active Active
-
2010
- 2010-02-04 TW TW099103347A patent/TWI501364B/zh not_active IP Right Cessation
- 2010-02-12 CN CN201010117406.XA patent/CN101814476B/zh not_active Expired - Fee Related
- 2010-02-16 KR KR1020100013796A patent/KR20100094943A/ko not_active Ceased
- 2010-02-17 US US12/707,348 patent/US20100207271A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9230897B2 (en) | 2013-12-20 | 2016-01-05 | Samsung Electronics Co., Ltd. | Semiconductor devices having through-substrate via plugs and semiconductor packages including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201112366A (en) | 2011-04-01 |
| CN101814476A (zh) | 2010-08-25 |
| JP5249080B2 (ja) | 2013-07-31 |
| US20100207271A1 (en) | 2010-08-19 |
| CN101814476B (zh) | 2014-08-27 |
| TWI501364B (zh) | 2015-09-21 |
| JP2010192747A (ja) | 2010-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5249080B2 (ja) | 半導体装置 | |
| US10692918B2 (en) | Electronic device package and fabricating method thereof | |
| US9337097B2 (en) | Chip package and method for forming the same | |
| TWI628727B (zh) | 半導體結構及其製造方法 | |
| US20060017161A1 (en) | Semiconductor package having protective layer for re-routing lines and method of manufacturing the same | |
| US7863719B2 (en) | Wafer level chip scale package | |
| US20110204487A1 (en) | Semiconductor device and electronic apparatus | |
| US12198997B2 (en) | Semiconductor package comprising first molding layer and second molding layer with different thermal expansion coefficients | |
| KR101059625B1 (ko) | 웨이퍼 레벨 칩 스케일 패키지 및 그 제조방법 | |
| JP3972211B2 (ja) | 半導体装置及びその製造方法 | |
| JP3726906B2 (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| JP7137674B1 (ja) | 半導体装置およびその製造方法 | |
| JP3666495B2 (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| JP2004134709A (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| JP4240226B2 (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| JP4038691B2 (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| JP4038692B2 (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| JP4058630B2 (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| JP4016276B2 (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 | |
| JP2007165437A (ja) | 半導体装置およびその製造方法 | |
| JP4794507B2 (ja) | 半導体装置 | |
| JP2011034988A (ja) | 半導体装置 | |
| JP2005026299A (ja) | 半導体装置及びその製造方法、回路基板並びに電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |