TWI628727B - 半導體結構及其製造方法 - Google Patents
半導體結構及其製造方法 Download PDFInfo
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- TWI628727B TWI628727B TW103145990A TW103145990A TWI628727B TW I628727 B TWI628727 B TW I628727B TW 103145990 A TW103145990 A TW 103145990A TW 103145990 A TW103145990 A TW 103145990A TW I628727 B TWI628727 B TW I628727B
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- Prior art keywords
- conductive
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- substrate
- semiconductor structure
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 239000004020 conductor Substances 0.000 claims abstract description 119
- 238000002161 passivation Methods 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 16
- 239000010410 layer Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 31
- 229910000679 solder Inorganic materials 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 229910000765 intermetallic Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 6
- 230000032798 delamination Effects 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010981 drying operation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 101100537629 Caenorhabditis elegans top-2 gene Proteins 0.000 description 1
- 101100261000 Caenorhabditis elegans top-3 gene Proteins 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 101150107801 Top2a gene Proteins 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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Abstract
半導體結構包含基板、自該基板暴露的傳導互連、覆蓋基板與傳導互連之部分的鈍化結構、位於鈍化結構上方並且與傳導互連的暴露部分接觸之凸塊下金屬(UBM)墊,以及位於UBM墊上方的導體,其中導體包含頂部表面、自頂部表面延伸並且包含第一梯度的第一傾斜外表面,以及第二傾斜外表面,其係自第一傾斜外表面的端部延伸至UBM墊並且包含實質小於第一梯度的第二梯度。
Description
本揭露係關於半導體結構及其製造方法。
使用半導體裝置的電子設備對於許多現代應用是很重要的。隨電子技術的進展,電子設備的尺寸越來越小且具有更多功能與更大量的積體電路。因此,製造電子設備包含越來越多組合步驟,並且涉及用於產生該電子設備中之半導體裝置的各種材料。因此,對於各個電子設備,持續需要改良電子設備的架構、增加生產效率以及降低相關的製造成本。
電子產業的主要趨勢係製造更小且更多功能的半導體裝置。半導體裝置包括彼此重疊的許多元件與用於電連接相鄰層之間元件的一些電子互連結構,因而最小化半導體裝置與電子設備的最終尺寸。然而,由於不同層與元件包含具有不同熱性質之不同種類的材料,因而此架構的半導體裝置具有脫層與接合問題。元件之間的接合不良會造成元件脫層與半導體裝置的產量損失。再者,半導體裝置的元件包含各種金屬材料,其含量有限且成本高。半導體的產量損失會加重材料浪費,因而增加製造成本。
在此小且高效能的半導體裝置中實施許多製造操作。因此,製
造微小化尺寸的半導體裝置變得更為複雜。製造半導體裝置的複雜性增加可造成缺陷,例如電子互連的可信賴度低、元件內發生破裂,以及脫層。因此,為了解決上述缺陷,持續需要改良半導體裝置的結構及其製造方法。
本揭露的一些實施例係提供一種半導體結構,其包括基板;傳導互連,其係自該基板暴露;鈍化結構,其覆蓋該基板以及該傳導互連的部分;凸塊下金屬(UBM)墊,其係位於該鈍化結構的上方並且與該傳導互連的該暴露部分接觸;以及導體,其係位於該UBM墊上方,其中該導體係包含一頂部表面、自該頂部表面延伸且包含一第一梯度的第一傾斜外表面,以及第二傾斜外表面,其係自該第一傾斜外表面的端部延伸至該UBM墊,並且包含實質小於該第一梯度的第二梯度。
本揭露的一些實施例係提供一種半導體結構,其包括基板;傳導互連,其係自該基板暴露;鈍化結構,其覆蓋該基板以及該傳導互連的部分;凸塊下金屬(UBM)墊,其係位於該鈍化結構上方並且與該傳導互連的暴露部分接觸;傳導基部,其係位於該UBM墊上並且包含第一頂部表面與自該UBM墊延伸至該第一頂部表面的第一外表面;以及傳導頂部,其係位於該傳導基部的該第一頂部表面上,並且包含第二頂部表面以及自該第一頂部表面延伸至該第二頂部表面的第二外表面,其中該傳導基部與該UBM墊之間的界面之長度係實質大於平行於該第二頂部表面的該傳導頂部之最長長度,以及該第一外表面與該UBM墊之間的第一角度係實質小於該第二外表面與該傳導基部之間的第二角度。
本揭露的一些實施例係提供一種製造半導體結構的方法,其包
括形成自基板暴露的傳導互連;在該傳導互連與該基板上方,置放圖案化的鈍化結構;在該鈍化結構上方以及該傳導互連上,置放UBM墊;在該UBM墊上方,置放光阻;形成穿過該光阻的開口;以及在該開口內置放傳導材料,以形成導體,其中該導體包含頂部表面、自該頂部表面延伸且包含第一梯度的第一傾斜外表面,以及第二傾斜外表面,其係自該第一傾斜外表面的端部延伸至該UBM墊並且包含實質小於該第一梯度的第二梯度。
100‧‧‧半導體結構
101‧‧‧基板
102‧‧‧傳導互連
101a‧‧‧上表面
103‧‧‧鈍化結構
102a‧‧‧頂部表面
103a‧‧‧頂部表面
104‧‧‧凹處
105‧‧‧UBM墊
102b‧‧‧暴露部分
105a‧‧‧頂部表面
104a‧‧‧側壁
106a‧‧‧頂部表面
106‧‧‧導體
106d‧‧‧端部
106b‧‧‧第一傾斜外表面
106c‧‧‧第二傾斜外表面
107‧‧‧水平軸
300‧‧‧半導體結構
200‧‧‧半導體結構
105-1、105-2、105-3‧‧‧UBM墊
102-1、102-2、102-3‧‧‧傳導互連
106b-1‧‧‧第一傾斜外表面
106-1、106-2、106-3‧‧‧導體
106a-2‧‧‧頂部表面
106c-1‧‧‧第二傾斜外表面
106b-2‧‧‧第一傾斜外表面
106c-2‧‧‧第二傾斜外表面
106c-3‧‧‧第二傾斜外表面
106b-3‧‧‧第一傾斜外表面
108‧‧‧傳導層
400‧‧‧半導體結構
110‧‧‧焊接材料
109‧‧‧IMC層
111‧‧‧第二基板
500‧‧‧半導體結構
600‧‧‧半導體結構
112‧‧‧傳導互連結構
113a‧‧‧第一頂部表面
113‧‧‧傳導基部
114‧‧‧傳導頂部
113b‧‧‧第一外表面
114b‧‧‧第二外表面
114a‧‧‧第二頂部表面
115a‧‧‧開口
115‧‧‧光阻
115b‧‧‧第一側壁
107‧‧‧光罩
115d‧‧‧端部
115c‧‧‧第二側壁
115a-1‧‧‧第一開口
115e‧‧‧頂部表面
708’‧‧‧半導體結構
115a-2‧‧‧第二開口
709’‧‧‧半導體結構
115f‧‧‧外側壁
104-1、104-2、104-3‧‧‧凹處
711’‧‧‧半導體結構
115c-1、115c-2、115c-3‧‧‧第二側壁
115b-1、115b-2、115b-3‧‧‧第一側壁
105b‧‧‧UBM層
106b-1、106b-2、106b-2‧‧‧第一傾斜外表面
由以下詳細說明與附隨圖式得以最佳了解本申請案揭示內容之各方面。注意,根據產業之標準實施方式,各種特徵並非依比例繪示。實際上,為了清楚討論,可任意增大或縮小各種特徵的尺寸。
圖1係根據一些實施例說明包含傾斜的外表面的導體之半導體結構概示圖。
圖1A係根據一些實施例說明包含突出傳導基部的導體之半導體結構概示圖。
圖2係根據一些實施例說明包含傾斜外表面的導體之半導體結構概示圖。
圖3係根據一些實施例說明具有一些導體的半導體結構概示圖。
圖4係根據一些實施例說明具有焊接材料的半導體結構之概示圖。
圖5係根據一些實施例說明具有第一基板接合第二基板的半導體結構之概示圖。
圖6係根據一些實施例說明半導體結構的概示圖,該半導體結構具有包含傳導頂部與傳導基部的導體。
圖7係根據一些實施例說明製造半導體結構的方法之流程圖。
圖7A係根據一些實施例說明具有基板之半導體結構的概示圖。
圖7B係根據一些實施例說明具有鈍化結構之半導體結構的概示圖。
圖7C係根據一些實施例說明具有凹槽之半導體結構的概示圖。
圖7D係根據一些實施例說明具有UBM墊之半導體結構的概示圖。
圖7E係根據一些實施例說明具有光阻之半導體結構的概示圖。
圖7F係根據一些實施例說明具有光阻開口之半導體結構的概示圖。
圖7G係根據一些實施例說明具有第一開口與第二開口之半導體結構的概示圖。
圖7H係根據一些實施例說明具有含錐形側壁之開口的半導體結構的概示圖。
圖7I係根據一些實施例說明半導體結構的概示圖,該半導體結構具有在光阻開口內的導體。
圖7J係根據一些實施例說明半導體結構的概示圖,該半導體結構具有在UBM墊上的導體。
圖8係根據一些實施例說明製造半導體結構的方法之流程圖。
圖8A係根據一些實施例說明具有基板與鈍化結構之半導體結構的概示圖。
圖8B係根據一些實施例說明具有UBM層之半導體結構的概示圖。
圖8C係根據一些實施例說明具有光阻之半導體結構的概示圖。
圖8D係根據一些實施例說明半導體結構的概示圖,該半導體結構的光阻具有一些開口。
圖8E係根據一些實施例說明半導體結構的概示圖,該半導體結
構在光阻的一些開口內具有一些導體。
圖8F係根據一些實施例說明半導體結構的概示圖,該半導體結構具有在UBM墊上的一些導體。
圖8G係根據一些實施例說明具有第一基板與第二基板之半導體結構的概示圖。
圖8H係根據一些實施例說明具有第一基板接合第二基板之半導體結構的概示圖。
以下揭示內容提供許多不同的實施例或範例,用於實施本申請案之不同特徵。元件與配置的特定範例之描述如下,以簡化本申請案之揭示內容。當然,這些僅為範例,並非用於限制本申請案。例如,以下描述在第二特徵上或上方形成第一特徵可包含形成直接接觸的第一與第二特徵之實施例,亦可包含在該第一與第二特徵之間形成其他特徵的實施例,因而該第一與第二特徵並非直接接觸。此外,本申請案可在不同範例中重複元件符號與/或字母。此重複係為了簡化與清楚之目的,而非支配不同實施例與/或所討論架構之間的關係。
再者,本申請案可使用空間對應語詞,例如「之下」、「低於」、「較低」、「高於」、「較高」等類似語詞之簡單說明,以描述圖式中一元件或特徵與另一元件或特徵的關係。空間對應語詞係用以包括除了圖式中描述的位向之外,裝置於使用或操作中之不同位向。裝置或可被定位(旋轉90度或是其他位向),並且可相應解釋本申請案使用的空間對應描述。可理解當一特徵係形成於另一特徵或基板上方時,可有其他特徵存在於其間。
半導體裝置包含主動裝置、電連接主動裝置的傳導跡線以及用於使傳導層彼此隔離的介電層。介電層包含低介電常數(k)、超低k、
極低k介電材料或其組合。這些低k介電材料改良介電層的電性,因而增加半導體裝置的操作效率。然而,低k介電材料具有一些結構缺陷。當得自於例如表面安置技術(surface mounting technology,SMT)或覆晶接合之不同操作的應力展現在低k介電材料上時,低k介電材料容易脫層或在介電層內產生破裂。
再者,半導體裝置中的元件變得越來越小。例如,凸塊下金屬層(UBM)的臨界尺寸變得更小。具有小的臨界尺寸之UBM誘發UBM下方或鄰近的底膠填充材料與聚合材料之脫層。半導體裝置的最小化造成在元件上的高應力、元件之間的不良接合,因而造成半導體裝置的可信賴度不良。
在本揭露中,揭示具有結構改良的半導體結構。半導體結構包含位在具有底切輪廓(undercut profile)之UBM上的導體。導體的底切輪廓擴大導體的基部。導體的基部係從導體的頂部突出。當UBM墊與導體之間的界面增加時,UBM墊的有效臨界尺寸亦增加,因而半導體結構的介電層上的應力減輕。因此,防止介電層的脫層,並且改良半導體裝置的可信賴度。
圖1係根據本揭露的不同實施例說明半導體結構100。半導體結構100包含基板101。在一些實施例中,基板101包含矽、鍺、鎵、砷極其組合。在一些實施例中,基板101係矽或玻璃基板。在一些實施例中,基板101包含多層基板、梯度基板、混合位向基板、其任何組合與/或類似物。在一些實施例中,基板101係絕緣體上矽(SOI)的形式。SOI基板包括在絕緣層(例如包埋的氧化物、氧化矽與/或類似物)上方形成的半導體材料(例如矽、鍺與/或類似物)層。
在一些實施例中,基板101係插入物(interposer)、封裝基板、高密度互連或具有積體電路晶粒的印刷電路板。在一些實施例中,晶粒係包含例如矽之半導體材料的小片,並且藉由光微影蝕刻操作而製造
為在晶粒中具有預定功能性電路。在一些實施例中,藉由機械或雷射刀,從矽晶圓將晶粒單粒化。在一些實施例中,晶粒係四邊形、矩形或正方形。
在一些實施例中,基板101包含電路。在一些實施例中,電路包含一些金屬層以及一些介電層。金屬層與介電層互疊。在一些實施例中,金屬層係位於相鄰的介電層之間,用以路由基板101上或基板101內的電子裝置之間的電子信號。在一些實施例中,介電層包含低介電常數(低k)材料、超低介電常數(ULK)材料或是極低介電常數(ELK)材料。
在一些實施例中,電路包含各種n型金屬氧化物半導體(NMOS)與/或p型金屬氧化物半導體(PMOS)裝置,例如電晶體、電容器、電阻器、二極體、光二極體、熔絲與/或類似物。在一些實施例中,電路互連以進行一或多種功能,例如記憶體結構、處理結構、感應器、放大器、功率分布、輸入/輸出電路與/或類似者。
在一些實施例中,半導體結構包含傳導互連102。在一些實施例中,傳導互連102將基板101的電路電連接至基板101的外部電路。在一些實施例中,傳導互連102係位於基板101的上表面101a上。在一些實施例中,傳導互連102係從基板101暴露,用於接收傳導結構。
在一些實施例中,傳導互連102係自基板101暴露的基板101之電路的傳導跡線。在一些實施例中,傳導互連102係位在基板101的上表面101a上之傳導墊。傳導墊係從基板101暴露,用於電連接基板101的外部電路,因而基板101內部的電路經由傳導墊而電連接基板101的外部電路。在一些實施例中,傳導互連102包含傳導材料,例如銅。
在一些實施例中,半導體結構100包含鈍化結構103。在一些實施例中,鈍化結構103係位於基板101與傳導互連102上方。鈍化結構103覆蓋基板101的上表面101a與部分的傳導互連102。在一些實施例
中,鈍化結構103係覆蓋傳導互連102的頂部表面102a之周圍。
在一些實施例中,將基板101上方的鈍化結構103圖案化,以於傳導互連102上方提供凹處104。在一些實施例中,凹處104係從鈍化結構103的頂部表面103a延伸至傳導互連102的頂部表面102a。在一些實施例中,凹處104的底部係與傳導互連102的部分102b交界。在一些實施例中,暴露部分102b係用於接收傳導結構或材料。
在一些實施例中,鈍化結構103包含複合結構。在一些實施例中,鈍化結構103包含介電材料,例如旋塗玻璃(spin-on glass,SOG)、氧化矽、氮氧化矽、氮化矽或類似物。在一些實施例中,鈍化結構103保護下層免於受到環境的污染。在一些實施例中,鈍化結構103受到保護層覆蓋,該保護層包含聚亞醯胺材料。在一些實施例中,將保護層圖案化以與鈍化結構103與凹處104共形。
在一些實施例中,凸塊下金屬(UBM)墊105係位於鈍化結構103上方並且與傳導互連102的暴露部分102b接觸。在一些實施例中,UBM墊105係與鈍化結構103的頂部表面103a、凹處104的側壁104a以及傳導互連102的暴露部分102b共形。
在一些實施例中,UBM墊105係在鈍化結構103上方的金屬層(metallurgical layer)或金屬堆疊膜(metallurgical stack film)。在一些實施例中,在一些實施例中,UBM墊105包含金屬或金屬合金。UBM墊105包含銅、金或類似物。在一些實施例中,UBM墊105係用於電連接基板101的電路與基板101的外部電路。在一些實施例中,包含重佈層(RDL)用以將電路的路徑從傳導互連102重新路由(re-route)至UBM墊105。
在一些實施例中,半導體結構100包含位於UBM墊105上方的導體106。在一些實施例中,導體106係自UBM墊105的頂部表面105a突出與延伸。在一些實施例中,導體106包含傳導材料,例如銅、金、
鎳、鋁或類似物。
在一些實施例中,導體106包含頂部表面106a。在一些實施例中,從導體106俯視,導體106的頂部表面106a係不同的剖面形狀。在一些實施例中,頂部表面106a係圓形、四邊形或多邊形。在一些實施例中,頂部表面106a係實質平行於基板101的上表面101a。在一些實施例中,頂部表面106a係用於接收焊接材料,以與另一基板電連接。
在一些實施例中,導體106的高度Hconductor係從UBM墊105至頂部表面106a。在一些實施例中,高度Hconductor係約10um至約30um。在一些實施例中,高度Hconductor係大於約15um。
在一些實施例中,導體106包含第一傾斜外表面106b。在一些實施例中,第一傾斜外表面106b係自頂部表面106a延伸。在一些實施例中,第一傾斜外表面106b係繞著導體106的中心軸旋轉。
在一些實施例中,第一傾斜外表面106b係包含第一梯度α。在一些實施例中,第一傾斜外表面106b係從第一傾斜外表面106b的端部106d以第一梯度α斜向導體106的頂部表面106a。在一些實施例中,第一梯度α係第一傾斜外表面106b與水平軸107之間的角度。如圖1所示,第一傾斜外表面106b之剖視圖為一直線,故第一梯度α為固定。在一些實施例中,第一梯度α係實質小於90°,因而與導體106底部相鄰的寬度Wbottom係實質大於與導體106之頂部表面106a相鄰的寬度Wtop。在一些實施例中,寬度Wbottom係比寬度Wtop大至少約3um。
在一些實施例中,第一傾斜外表面106b係以實質等於90°的第一梯度從頂部表面106a延伸至UBM墊105的垂直表面,因而寬度Wbottom係與寬度Wtop實質相同。在一些實施例中,第一傾斜外表面106b係實質垂直於頂部表面106a。
在一些實施例中,導體106包含第二傾斜外表面106c。在一些實施例中,第二傾斜外表面106c係自第一傾斜外表面106b延伸至UBM
墊105。在一些實施例中,第二傾斜外表面106c係繞著導體106的中心軸旋轉。
在一些實施例中,第二傾斜外表面106c包含第二梯度θ。在一些實施例中,第二傾斜外表面106c係以第二梯度θ從UBM墊105斜向第一傾斜外表面106c的端部106d。如圖1所示,第二傾斜外表面106c之剖視圖為一直線,故第二梯度θ為固定。
在一些實施例中,第二梯度θ係第二傾斜外表面106c與UBM墊105之間的角度。在一些實施例中,第二梯度θ係實質小於90°,因而與UBM墊105相鄰的第二傾斜外表面106c之寬度Wconductor係實質大於寬度Wbottom,以及第二傾斜外表面106c係自第一傾斜外表面106b突出寬度Wprotrusion與高度Hprotrusion。在一些實施例中,寬度Wconductor係導體106的最長寬度。在一些實施例中,寬度Wprotrusion係實質大於或等於1um。在一些實施例中,高度Hprotrusion係實質大於或等於1um。
在如圖1A所示的一些實施例中,半導體結構100’係包含具有第二梯度θ為直角的第二傾斜外表面106c。在一些實施例中,第二傾斜外表面106c係以實質等於90°的第二梯度θ從UBM墊105延伸的垂直表面。在一些實施例中,第二傾協外表面106c係實質垂直於UBM墊105。在一些實施例中,第二傾斜外表面106c係自第一傾斜外表面106b突出寬度Wprotrusion與高度Hprotrusion。在一些實施例中,寬度Wprotrusion係實質大於或等於1um。在一些實施例中,高度Hprotrusion係實質大於或等於1um。
參閱圖1,第二梯度θ係實質不同於第一梯度α。在一些實施例中,第二梯度θ係實質小於第一梯度α,因而第二傾斜外表面106c係自第一傾斜外表面106b突出,以及與UBM墊105相鄰之第二傾斜外表面106c的寬度Wconductor係實質大於寬度Wbottom。在一些實施例中,寬度Wconductor係導體106的最長寬度。
圖2係根據本揭露的不同實施例說明半導體結構200。半導體結構200包含基板101、傳導互連102、鈍化結構103以及UBM墊105,其係類似於圖1與圖1A所示的架構。在一些實施例中,半導體結構200係不同於圖1的半導體結構100,其中半導體結構200的第一傾斜外表面106b係於實質大於90°的第一梯度α,因而與導體106的底部相鄰之寬度Wbottom係實質小於與導體106的頂部表面106a相鄰之寬度Wtop。
在一些實施例中,第二傾斜外表面106c係於實質小於90°的第二梯度θ,因而與UBM墊105相鄰之第二傾斜外表面106c的寬度Wconductor係實質大於寬度Wbottom與寬度Wtop,並且第二傾斜外表面106c係自第一傾斜外表面106b突出寬度Wprotrusion與高度Hprotrusion。在一些實施例中,寬度Wprotrusion係實質大於或等於1um。在一些實施例中,高度Hprotrusion係實質大於或等於1um。
在一些實施例中,第二梯度θ係實質不同於第一梯度α。在一些實施例中,第二梯度θ係實質小於第一梯度α,因而第二傾斜外表面106c係自第一傾斜外表面106b突出。
圖3係根據本揭露的不同實施例說明半導體結構300。半導體結構300包含基板101。在一些實施例中,半導體結構300進一步包含位於基板101之上表面101a上的一些傳導互連(102-1、102-2、102-3)。在一些實施例中,傳導互連(102-1、102-2、102-3)係部分被鈍化結構103覆蓋,傳導互連(102-1、102-2、102-3)各自具有從鈍化結構103所暴露的暴露部分。
在一些實施例中,半導體結構300包含位於鈍化結構103上方的一些UBM墊(105-1、105-2、105-3),其係分別與傳導互連(102-1、102-2、102-3)的暴露部分接觸。在一些實施例中,UBM墊(105-1、105-2、105-3)係彼此電隔離。
在一些實施例中,半導體結構300包含分別位於UBM墊(105-1、
105-2、105-3)上方的一些導體(106-1、106-2、106-3)。在一些實施例中,導體(106-1、106-2、106-3)類似於圖1所示的架構。
在一些實施例中,導體106-1具有第一傾斜外表面106b-1與第二傾斜外表面106c-1。在一些實施例中,第二傾斜外表面106c-1包含第二梯度θ1。在一些實施例中,第二傾斜外表面106c-1係以第二梯度θ從UBM墊105-1斜向第一傾斜外表面106c-1的端部106d。
在一些實施例中,第二梯度θ1係第二傾斜外表面106c-1與UBM墊105-1之間的角度。在一些實施例中,第二梯度θ1係實質小於90°,因而第二傾斜外表面106c-1係自第一傾斜外表面106b-1突出。
在一些實施例中,寬度Wconductor-1係實質大於頂部表面106a-1的寬度Wtop-1以及與傳導106-1之底部相鄰的寬度Wbottom-1。在一些實施例中,第二傾斜外表面106c-1係自第一傾斜外表面106b-1突出寬度Wprotrusion-1與高度Hprotrusion-1。在一些實施例中,寬度Wprotrusion-1係實質大於或等於1um。在一些實施例中,高度Hprotrusion-1係實質大於或等於1um。
在一些實施例中,導體106-2包含以第二梯度θ2從第一傾斜外表面106b-1突出的第二傾斜外表面106c-2。在一些實施例中,第二梯度θ2係與導體106-1的第二梯度θ1實質相同或不同。在一些實施例中,寬度Wconductor-2係實質大於頂部表面106a-2的寬度Wtop-2以及與導體106-2之底部相鄰的寬度Wbottom-2。
在一些實施例中,第二傾斜外表面106c-2係自第一傾斜外表面106b-2突出寬度Wprotrusion-2與高度Hprotrusion-2。在一些實施例中,寬度Wprotrusion-2與高度Hprotrusion-2係分別與寬度Wprotrusion-1與高度Hprotrusion-1實質相同或不同。在一些實施例中,寬度Wprotrusion-2係實質大於或等於1um。在一些實施例中,高度Hprotrusion-2係實質大於或等於1um。
在一些實施例中,導體106-3包含以第二梯度θ3從第一傾斜外表
面106b-3突出的第二傾斜外表面106c-3。在一些實施例中,第二梯度θ3係與導體106-2的第二梯度θ2實質相同或不同。在一些實施例中,第二梯度θ3係與導體106-1的第一梯度θ1相同或不同。在一些實施例中,寬度Wconductor-3係實質大於頂部表面106a-1的寬度Wtop-3以及與導體106-3之底部相鄰的寬度Wbottom-3。
在一些實施例中,第二傾斜外表面106c-2係自第一傾斜外表面106b-2突出寬度Wprotrusion-3與高度Hprotrusion-3。在一些實施例中,寬度Wprotrusion-3與高度Hprotrusion-3係分別與寬度Wprotrusion-1與高度Hprotrusion-1實質相同或不同。在一些實施例中,寬度Wprotrusion-3與高度Hprotrusion-3係分別與寬度Wprotrusion-2與高度Hprotrusion-2實質相同或不同。在一些實施例中,寬度Wprotrusion-3係實質大於或等於1um。在一些實施例中,高度Hprotrusion-3係實質大於或等於1um。
在一些實施例中,導體106-1的寬度Wconductor-1、導體106-2的寬度Wconductor-2以及導體106-3的寬度Wconductor-3係彼此相同或不同。在一些實施例中,導體106-1的高度Hconductor-1、導體106-2的高度Hconductor-2以及導體106-3的高度Hconductor-3係彼此相同。在一些實施例中,高度Hconductor-1、高度Hconductor-2以及導體106-3的高度Hconductor-3係分別大於約15um。
圖4係根據本揭露的不同實施例說明半導體結構400。半導體結構400包含基板101、傳導互連102、鈍化結構103、UBM墊105與導體106,其係類似於圖1的架構。在一些實施例中,傳導層108係位於導體106的頂部表面106a上。在一些實施例中,傳導層108包含金、銀、鉑或其組合。
在一些實施例中,金屬間化合物(inter-metallic compound,IMC)層109係位於傳導層108上。在一些實施例中,IMC層109包含例如銅之金屬以及例如錫或鉛之焊接材料。
在一些實施例中,焊接材料110係位於IMC層109上。在一些實施例中,焊接材料110包含錫、鉛、高鉛材料、錫底焊料、無鉛銲料、錫-銀焊料、錫-銀-銅焊料或其他合適的傳導材料。在一些實施例中,焊接材料110係用於接合導體106與另一基板,因而電連接基板101的電路與另一基板的電路。
圖5係根據本揭露的不同實施例說明半導體結構500。半導體結構500包含第一基板101。第一基板101具有類似於圖1的基板101之架構。在一些實施例中,半導體結構500進一步包含傳導互連102、鈍化結構103、UBM墊105、導體106、傳導層108以及IMC層109,其係類似於圖1或圖4所示的架構。
在一些實施例中,半導體結構500包含第二基板111。在一些實施例中,第二基板111係有機基板、PCB、陶瓷基板、插入物、封裝基板、高密度互連或類似物。在一些實施例中,第二基板111包含矽、鍺、鎵、砷以及其組合。
在一些實施例中,第二基板111包含位於第二基板111上的一些傳導互連結構112。在一些實施例中,傳導互連結構112係自第二基板111暴露。在一些實施例中,傳導互連結構112係傳導跡線、傳導墊、部分的重佈層(RDL)或類似物。
在一些實施例中,傳導互連結構112係用於接收傳導連接器或傳導材料,以接合第二基板111的電路與另一基板的電路。在一些實施例中,傳導互連結構112包含銅、鎢、鋁、銀、其組合、或類似物。
在一些實施例中,第二基板111係藉由焊接材料110接合第一基板101。在一些實施例中,焊接材料110係位在傳導互連結構112與導體106之間。在一些實施例中,焊接材料110係位於傳導互連結構112與IMC層109其中之一或傳導層108之間。在一些實施例中,第一基板101的電路與第二基板111的電路係經由焊接材料110而電連接。
圖6係根據本揭露的不同實施例說明半導體結構600。半導體結構600包含基板101、傳導互連102、鈍化結構103以及UBM墊105,其係類似於圖1所示的架構。
在一些實施例中,半導體結構600包含傳導基部113。在一些實施例中,傳導基部113係位於UBM墊105上。在一些實施例中,傳導基部113包含傳導材料,例如銅、金、鎳、鋁、或類似物。
在一些實施例中,傳導基部113包含第一頂部表面113a與自UBM墊105延伸至第一頂部表面113a的第一外表面113b。在一些實施例中,第一外表面113b係以第一角度θ從UBM墊105斜向第一頂部表面113a。如圖6所示,第一外表面113b之剖視圖為一直線,故第一角度θ為固定。在一些實施例中,第一角度θ係第一外表面113b與UBM墊105之間的角度。在一些實施例中,傳導基部113的第一角度係實質小於90°。
在一些實施例中,半導體結構600包含傳導頂部114。在一些實施例中,傳導頂部114係位於第一頂部表面113a上。在一些實施例中,傳導頂部114係圓錐形。在一些實施例中,傳導頂部114包含傳導材料,例如銅、金、鎳、鋁、或類似物。在一些實施例中,傳導頂部114包含與傳導基部113相同的傳導材料。在一些實施例中,傳導頂部114係與傳導基部113一體成形。
在一些實施例中,傳導頂部114包含第二頂部表面114a與自第一頂部表面113a延伸至第二頂部表面114a的第二外表面114b。在一些實施例中,第二頂部表面114a係用於接收焊接材料,因而用於接合基板101與另一基板。在一些實施例中,第二外表面114b係以第二角度α從第二頂部表面114a斜向第一頂部表面113a。如圖6所示,第二外表面114b之剖視圖為一直線,故第二角度α為固定,第二外表面114b之剖視圖之直線不同於第一外表面113b之剖視圖的直線。在一些實施例
中,第二角度α係第二外表面114b與傳導基部113之第一頂部表面113a之間的角度。在一些實施例中,傳導頂部114的第二角度α係實質小於90°。
在一些實施例中,傳導基部113係自傳導頂部114突出大於或等於1um的寬度Wprotrusion。在一些實施例中,傳導基部113的高度Hprotrusion係大於或等於約1um。在一些實施例中,傳導基部113的高度Hprotrusion與傳導頂部114的高度Htop portion之比例係約1:3至約1:20。在一些實施例中,高度Hprotrusion與高度Htop portion之比例係約1:5。在一些實施例中,傳導基部113與傳導頂部114的總高度Hconductor係大於約15um。
在一些實施例中,傳導基部113的寬度Wbase portion係傳導基部113與UBM墊105之間的界面之長度。在一些實施例中,傳導頂部114具有平行於第二頂部表面114a的最長長度Wtop portion。在一些實施例中,寬度Wbase portion係實質大於最長長度Wtop portion。在一些實施例中,寬度Wbase portion係大於最長長度Wtop portion約2um。在一些實施例中,平行於第二頂部表面114a的傳導頂部114之最長長度Wtop portion與平行於第二頂部表面114a的傳導頂部114之最短距離Wtop portion係大於約3um。
在本揭露中,亦揭示製造半導體結構的方法。在一些實施例中,藉由方法700形成半導體結構。方法700包含一些操作,並且描述與說明並不視為操作順序的限制。
圖7係根據本揭露的不同實施例說明製造半導體結構的方法700之流程圖。在一些實施例中,方法700製造類似於圖1所示之半導體結構100之半導體結構。方法700包含一些操作(701、702、703、704、705、706、707、708、709、710與711)。
在操作701中,如圖7A所示接收或提供基板101。在一些實施例
中,基板101係類似於圖1所示的架構。在一些實施例中,基板101包含一些ELK介電層。
在操作702中,在基板101上或基板101內,形成傳導互連102,如圖7A所示。在一些實施例中,形成自基板101暴露的傳導互連102。傳導互連102係自基板101的上表面101a暴露。在一些實施例中,傳導互連102係類似於圖1所示的架構。在一些實施例中,傳導互連102係電連接基板101的電路。
在一些實施例中,傳導互連102係傳導墊或是傳導跡線。在一些實施例中,藉由鑲嵌或是雙鑲嵌操作,包含藉由化學機械拋光(CMP)移除過多傳導材料,例如銅或金,以及在開口中填滿傳導材料,而形成傳導互連102。
在操作703中,鈍化結構103係位於傳導互連102與基板101上方,如圖7B所示。在一些實施例中,鈍化結構103覆蓋傳導互連102與基板101的上表面101a,以保護傳導互連102與基板101的電路。在一些實施例中,鈍化結構103係類似於圖1所示的架構。在一些實施例中,藉由化學氣相沉積(CVD)、物理氣相沉積(PVD)或類似方法,形成鈍化結構103。
在操作704中,移除部分的鈍化結構103,以形成凹處104,如圖7C所示。在一些實施例中,將鈍化結構103圖案化以於傳導互連102的頂部表面102a上方提供凹處104。在一些實施例中,藉由蝕刻或任何其他合適的操作,形成凹處104。在一些實施例中,凹處104係類似於圖1所示的架構。
在操作705中,UBM墊105係位於鈍化結構103與傳導互連102上方,如圖7D所示。在一些實施例中,例如銅之傳導材料位於鈍化結構103與傳導互連102的暴露部分102b上方,以形成UBM墊105。在一些實施例中,UBM墊105係接觸且因而電連接傳導互連102。在一些
實施例中,UBM墊105係類似於圖1所示的架構。在一些實施例中,UBM墊105係與凹處104的側壁104a以及鈍化結構103的頂部表面103a共形。在一些實施例中,藉由不同方法,例如濺鍍或電鍍操作,形成UBM墊105。
在操作706中,光阻115係位於UBM墊105上方,如圖7E所示。在一些實施例中,藉由旋塗操作,光阻115係均勻位於UBM墊105上。在一些實施例中,光阻115係暫時塗覆在UBM墊105上。在一些實施例中,在旋塗操作之後,在加熱板上預烤光阻115。
在一些實施例中,光阻115係光敏材料,其具有取決於光照的化學性質。在一些實施例中,光阻115係對於電磁輻射敏感,例如紫外(UV)光,光阻115的化學性質係依暴露於UV光而變化。
在一些實施例中,光阻115係正光阻。暴露於UV光的正光阻係可溶解於顯影溶液,而未暴露於UV光的正光阻係不可溶解於顯影溶液。在一些實施例中,光阻115係負光阻。暴露於UV光的負光阻係不可溶解於顯影溶液,而未暴露於UV光的負光阻係可溶解於顯影溶液。
在操作707中,光阻115形成預定圖案,如圖7F所示。在一些實施例中,具有預定圖案的光罩係位於光阻115上。在一些實施例中,光罩包含二氧化矽、玻璃或類似物。在一些實施例中,光罩具有預定的圖案,其係對應於UBM墊上且在光阻115內所欲形成的開口115a之位置。在一些實施例中,光罩包含通光部與擋光部,因而電磁輻射例如UV光可穿過通光部但無法穿過擋光部。在一些實施例中,在光阻115暴露於電磁輻射之後,光罩的預定圖案重製於光阻115。在一些實施例中,在UBM墊105上方的光阻115之部分係暴露至電磁輻射,因而光阻115的該部分係不溶解於顯影溶液。
在操作708中,形成穿過光阻115的開口115a,如圖7F所示。在一
些實施例中,在UBM墊105上且暴露於電磁輻射的光阻115之該部分係溶解於顯影溶液,以形成開口115a。在形成開口115a之後,移除光罩107。
在操作709中,形成光阻115的側壁(115b、115c),如圖7G所示。在一些實施例中,側壁(115b、115c)第一側壁115b與第二側壁115c。在一些實施例中,第一側壁115b係從第一側壁115b的端部115d斜向光阻115的頂部表面115e,因而與頂部表面115e相鄰的開口115a之寬度Wtop係小於與UBM墊105相鄰的開口115a之寬度Wbottom。在一些實施例中,寬度Wtop係實質小於圖7F的寬度Wtop'。在一些實施例中,第二側壁115c係從UBM墊105斜向第一側壁115b的端部115d。
在一些實施例中,第一側壁115b係以第一梯度α傾斜,以及第二側壁115c係以第二梯度θ傾斜。在一些實施例中,第一梯度α係第一側壁115b與水平軸107之間的角度,以及第二梯度θ係第二側壁115c與UBM墊105之間的角度。
在一些實施例中,第一梯度α係實質大於第二梯度θ。在一些實施例中,第一梯度α與第二梯度θ係實質小於90°。在一些實施例中,第二側壁115c係從第一側壁115b收縮分別大於或等於約1um的長度Wprotrusion與高度Hprotrusion。
在一些實施例中,開口115a包含第一開口115a-1與第二開口115a-2。在一些實施例中,第一開口115a-1係自光阻115的頂部表面115e延伸,以及第二開口115a-2係自UBM墊延伸至第一開口115a-1。在一些實施例中,第二開口115a-2的寬度Wconductor係實質大於第一開口115a-1的寬度Wbottom。
在一些實施例中,藉由沖洗和乾燥操作,形成側壁(115b、115c)。由於光阻115包含具有約25%高交聯密度的交聯劑,因而傾向於形成包含第一側壁115b與第二側壁115c的側壁(115b、115c)。在一
些實施例中,光阻115包含R-M-OOH,其中R代表光活性化合物(photo active compound(PAC),M代表單體或交聯劑,以及OOH代表氧與氫。
在一些實施例中,圖7F的半導體結構708’係以預定加速度旋轉,該預定加速度係超過光阻115與UBM墊105之間的黏著,因而與UBM墊105相鄰的光阻115係朝向外側壁115f縮小,以形成自UBM墊105斜向端部115d的第二側壁115c,如圖7G所示。在一些實施例中,圖7F的半導體結構708’係以每分鐘約6000轉(rpm)的預定加速度旋轉。
在一些實施例中,形成如圖7H所示之第一側壁115b以及如圖7G所示之第二側壁115c。在一些實施例中,第一側壁115b係從UBM墊105斜向光阻115的頂部表面115e,因而與頂部表面115e相鄰的開口115a之寬度Wtop係小於與UBM墊105相鄰的開口115a之寬度Wbottom'。
在一些實施例中,藉由任何合適的操作,例如膨脹(swelling)、影像反轉(image reversal)、使用不同遮罩多次曝光、或類似方法,形成第一側壁115b。在一些實施例中,與頂部表面115e相鄰之光阻115的部分係比與UBM墊105相鄰之光阻115的部分更為親水性,因而與頂部表面115e相鄰之光阻115的部分之寬度Wtop係比與UBM墊105相鄰之光阻115的部分之寬度Wbottom'更窄。因此,形成第一側壁115b。在一些實施例中,如圖7所示之操作708中與頂部表面115e相鄰的開口115a之寬度Wtop’係大於圖7G的寬度Wtop。
在形成第一側壁115b之後,形成第二側壁115c。在一些實施例中,由於光阻115具有高交聯密度並且因此具有易於自開口115a向光阻115的外側壁115f皺縮的傾向,因而形成第二側壁115c。
在一些實施例中,藉由沖洗與乾燥操作,形成第二側壁115c。在一些實施例中,圖7H的半導體結構709’係以預定加速度旋轉,該預定加速度係超過光阻115與UBM墊105之間的黏著,因而與UBM墊105相
鄰的光阻115係朝向外側壁115f縮小,以形成自UBM墊105斜向端部115d的第二側壁115c,如圖7G所示。在一些實施例中,圖7H的半導體結構709’係以每分鐘約6000轉(rpm)的預定加速度旋轉。在一些實施例中,第一側壁115b係以第一梯度α傾斜,以及第二側壁115c係以第二梯度θ傾斜。
在操作710中,傳導材料係位於開口115a內,以形成導體106,如圖7I所示。在一些實施例中,藉由電鍍、無電鍍、或類似方法配置傳導材料,例如銅,以於UBM墊105上形成導體106。
在一些實施例中,導體106包含頂部表面106a、第一傾斜外表面106b以及第二傾斜外表面106c。在一些實施例中,第一傾斜外表面106b係自頂部表面106a延伸,以及第二傾斜外表面106c係自第一傾斜外表面106b的端部106d延伸至UBM墊105。在一些實施例中,第一傾斜外表面106b係以第一梯度α傾斜,以及第二傾斜外表面106c係以第二梯度θ傾斜。在一些實施例中,第二梯度θ係實質小於第一梯度α。
在一些實施例中,第一傾斜外表面106b係與光阻115的開口115a之第一側壁115b共形,以及第二傾斜外表面106c係與光阻115的開口115a之第二側壁115c共形。在一些實施例中,第一傾斜外表面106b係與第一側壁115b交界,以及第二傾斜外表面106c係與第二側壁115c交界。
在操作711中,自UBM墊105移除光阻115,如圖7J所示。在一些實施例中,藉由任何合適的方法,例如剝除、電漿灰化、乾式蝕刻、或類似方法,移除光阻115。在移除光阻115之後,具有第一傾斜外表面106與第二傾斜外表面106c的導體106係位於UBM墊105上。在一些實施例中,導體106具有類似於圖1所示的架構。
在一些實施例中,第二傾斜外表面106係自第一傾斜外表面106b突出大於或等於約1um。在一些實施例中,第二傾斜外表面106c的寬
度Wconductor係實質大於第一傾斜外表面106b的寬度Wtop或寬度Wbottom。由於第二傾斜外表面106c係自第一傾斜外表面106b突出,因而基板101上的介電層上之應力減少,因而增加半導體結構711’的可靠度。在一些實施例中,如果第二傾斜外表面106c係自第一傾斜外表面106b突出約2um,則應力減少約8%。
圖8係根據本揭露的不同實施例說明製造半導體結構之方法800的流程圖。在一些實施例中,方法800係製造類似於圖5所示之半導體結構500的半導體結構。方法800包含一些操作(801、802、803、804、805、806、807、808、809、810、811、812與813)。
在操作801中,接收或提供第一基板101,如圖8A所示。在一些實施例中,第一基板101的架構類似於圖1的基板101之架構。在一些實施例中,操作801係類似於操作701。
在操作802中,一些傳導互連(102-1、102-2、102-3)係位於第一基板101的上表面101a上,如圖8A所示。在一些實施例中,傳導互連(102-1、102-2、102-3)係自第一基板101暴露。在一些實施例中,傳導互連(102-1、102-2、102-3)各自的架構係類似於圖1之傳導互連102的架構。在一些實施例中,操作802係類似於操作702。
在操作803中,鈍化結構103係位於傳導互連(102-1、102-2、102-3)與第一基板101的上方,如圖8A所示。在一些實施例中,操作803係類似於操作703。
在操作804中,移除鈍化結構103的一些部分,以形成一些凹處(104-1、104-2、104-3),如圖8A所示。在一些實施例中,移除位於傳導互連(102-1、102-2、102-3)上方的鈍化結構103之部分,以分別形成凹處(104-1、104-2、104-3)。在一些實施例中,凹處(104-1、104-2、104-3)各自的架構係類似於圖1所示之凹處104的架構。在一些實施例中,操作804係類似於操作704。
在操作805中,傳導材料係位於鈍化結構103與傳導互連(102-1、102-2、102-3)的暴露部分上,以形成UBM層105b,如圖8B所示。在一些實施例中,UBM層105b的一些部分係與傳導互連(102-1、102-2、102-3)接觸。在一些實施例中,UBM層105b的一些部分係與傳導互連(102-1、102-2、102-3)接觸。在一些實施例中,UBM層105b的架構係類似於圖1的UBM墊的架構。在一些實施例中,操作805係類似於操作705。
在操作806中,光阻115係位於UBM層105b的上方,如圖8C所示。在一些實施例中,操作806係類似於操作706。
在操作807中,藉由光罩,形成光阻115的預定圖案。在一些實施例中,具有預定圖案的光罩係位於光阻115上方。在一些實施例中,光罩具有預定圖案,其係對應於各個傳導互連(102-1、102-2、102-3)上方所欲形成的開口115a之位置。在一些實施例中,操作807係類似於操作707。
在操作808中,形成穿過光阻115的一些開口115a,如圖8D所示。在一些實施例中,藉由顯影溶液,溶解傳導互連(102-1、102-2、102-3)上方的光阻115之一些部分,以形成開口115a。在一些實施例中,操作808係類似於操作708。
在操作809中,形成光阻115的一些側壁(115b-1、115b-2、115b-3、115c-1、115c-2、115c-3),其包含一些第一側壁(115b-1、115b-2、115b-3)與一些第二側壁(115c-1、115c-2、115c-3),如圖8D所示。在一些實施例中,光阻115具有高交聯密度,因而藉由沖洗與乾燥以預定加速度形成側壁(115b-1、115b-2、115b-3、115c-1、115c-2、115c-3)。在一些實施例中,第一側壁(115b-1、115b-2、115b-3)係分別自第二側壁(115c-1、115c-2、115c-3)斜向光阻115的頂部表面115e,以及第二側壁(115c-1、115c-2、115c-3)係分別自UBM層105b
斜向第一側壁(115b-1、115b-2、115b-3)。在一些實施例中,操作809係類似於圖7G所示的操作709。
在一些實施例中,形成第一側壁(115b-1、115b-2、115b-3),而後形成第二側壁(115c-1、115c-2、115c-3),如圖8D所示。在一些實施例中,形成類似於圖7H的第一側壁115b之第一側壁(115b-1、115b-2、115b-3),而後形成類似於圖7G的第二側壁115c之第二側壁(115c-1、115c-2、115c-3)。
在一些實施例中,藉由膨脹(swelling),形成第一側壁(115b-1、115b-2、115b-3),而後藉由沖洗與乾燥,形成第二側壁(115c-1、115c-2、115c-3)。在一些實施例中,藉由旋轉以預定加速度將與UBM墊105相鄰的光阻115縮向外側壁115f,以形成自UBM墊105斜向第一側壁(115b-1、115b-2、115b-3)之端部115d的第二側壁(115c-1、115c-2、115c-3)。在一些實施例中,光阻115的開口115a各自包含第一開口115a-1與第二開口115a-2,其具有類似於圖7G所示的架構。
在操作810中,傳導材料係位於開口115a內,以於UBM層105b上形成一些導體(106-1、106-2、106-3),如圖8E所示。在一些實施例中,導體(106-1、106-2、106-3)的一些第一傾斜外表面(106b-1、106b-2、106b-2)係與光阻115的第一側壁(115b-1、115b-2、115b-3)共形。在一些實施例中,操作811係類似於操作711。
在操作811中,自UBM層105b移除光阻115,如圖8F所示。在一些實施例中,藉由任何合適的方法,例如剝除、電漿灰化、乾式蝕刻或類似方法,移除光阻115。在一些實施例中,半導體結構811’具有類似於圖3之半導體結構300的架構。在一些實施例中,各個導體(106-1、106-2、106-3)具有類似於圖1之導體106的架構。
再者,藉由任何合適的方法,例如蝕刻,移除UBM層105b的一些部分,以形成一些UBM墊(105-1、105-2、105-3)。在一些實施例
中,移除相鄰導體(106-1、106-2、106-3)之間的UBM層105b的部分,因而UBM墊(105-1、105-2、105-3)係彼此電隔離。在一些實施例中,導體(106-1、106-2、106-3)係分別受到支撐並且自UBM墊(105-1、105-2、105-3)突出。在一些實施例中,UBM墊(105-1、105-2、105-3)各自具有類似於圖1的UBM墊之架構。
在操作812中,接收或提供第二基板111,如圖8G所示。在一些實施例中,一些傳導互連結構112係位於第二基板111上。在一些實施例中,第二基板111具有類似於圖5所示的架構。
在操作813中,第一基板101係藉由焊接材料而與第二基板111接合,如圖8H所示。在一些實施例中,傳導互連結構112係藉由焊接材料110而分別與對應的導體(106-1、106-2、106-3)接合。在一些實施例中,焊接材料110係經由導體(106-1、106-2、106-3)與傳導互連結構112,而電連接第一基板101的電路與第二基板111的電路。在一些實施例中,當導體(106-1、106-2、106-3)與傳導互連結構112接合時,在焊接材料110與導體(106-1、106-2、106-3)之間形成IMC層109。在一些實施例中,第一基板101係與第二基板111接合,形成半導體封裝,例如覆晶封裝。
在本揭露中,半導體結構包含位於具有底切輪廓之UBM墊上的導體。導體的基部係自導體的頂部突出,因而導體的基部係被放大,以及半導體結構的介電層上之應力被最小化。因此,防止介電層的脫層。
在一些實施例中,半導體結構包含基板、自該基板暴露的傳導互連、覆蓋該基板與部分的該傳導互連的鈍化結構、位於該鈍化結構上方且與該傳導互連的暴露部分接觸之凸塊下金屬(UBM)墊,以及在UBM墊上方的導體,其中導體包含頂部表面、自該頂部表面延伸且包含第一梯度的第一傾斜外表面,以及第二傾斜外表面,其係自第一
傾斜外表面的端部延伸至UBM墊並且包含實質小於第一梯度的第二梯度。
在一些實施例中,第二傾斜外表面係自第一傾斜外表面突出大於或等於1um。在一些實施例中,第一梯度或第二梯度係實質小於90°。在一些實施例中,導體包含銅。在一些實施例中,導體的高度係大於約15um。在一些實施例中,頂部表面係用於接收焊接材料。
在一些實施例中,半導體結構包含基板、自該基板暴露的傳導互連、覆蓋該基板與部分該傳導互連的鈍化結構、位於該鈍化結構上方且與互連結構的暴露部分連接之凸塊下金屬(UBM)墊、位於該UBM墊上且包含第一頂部表面與第一外表面的傳導基部,該第一外表面係自該UBM墊延伸至該第一頂部表面,以及位於該傳導基部的第一頂部表面上且包含第二頂部表面與第二外表面的傳導頂部,該第二外表面係自該第一頂部表面延伸至第二頂部表面,其中傳導基部與UBM墊之間的界面之長度係實質大於平行於第二頂部表面的傳導頂部之最長長度,以及第一外表面與UBM墊之間的第一角度係實質小於第二外表面與傳導基部之間的第二角度。
在一些實施例中,傳導頂部係與傳導基部一體成形。在一些實施例中,傳導頂部與傳導基部包含相同的傳導材料。在一些實施例中,傳導頂部與傳導基部係包含銅。在一些實施例中,傳導基部與UBM墊之間的界面之長度係比平行於第二頂部表面的傳導頂部之最長長度大約2um。在一些實施例中,傳導頂部係圓錐形。在一些實施例中,傳導基部的第一角度或傳導基部的第二角度係實質小於90°。在一些實施例中,傳導基部的高度與傳導頂部的高度之比例係約1:5。在一些實施例中,傳導基部的高度係大於或等於約1um。在一些實施例中,平行於第二頂部表面的傳導頂部之最長長度與平行於第二頂部表面的傳導頂部之最短長度之間的差係大於約3um。
在一些實施例中,製造半導體結構的方法包含形成自基板暴露的傳導互連,在該傳導互連與該基板上方,置放圖案化的鈍化結構,在該鈍化結構上方與該傳導互連上置放UBM墊,在UBM上方置放光阻,形成穿過該光阻的開口,在該開口中置放傳導材料以形成導體,其中該導體包含頂部表面、自該頂部表面延伸且包含第一梯度的第一傾斜外表面,以及自該第一傾斜外表面延伸至UBM墊並且包含實質小於第一梯度的第二梯度之第二傾斜外表面。
在一些實施例中,第一傾斜外表面係與該開口的第一側壁共形,以及第二傾斜外表面係與該開口的第二側壁共形。在一些實施例中,光阻的開口包含第一開口以及自UBM墊延伸至第一開口的第二開口,以及第二開口的長度係實質大於第一開口的長度。在一些實施例中,光阻的開口包含以第一梯度傾斜的第一側壁以及以第二梯度傾斜的第二側壁。
前述內容概述一些實施方式的特徵,因而熟知此技藝之人士可更加理解本申請案揭示內容之各方面。熟知此技藝之人士應理解可輕易使用本申請案揭示內容作為基礎,用於設計或修飾其他製程與結構而實現與本申請案所述之實施方式具有相同目的與/或達到相同優點。熟知此技藝之人士亦應理解此均等架構並不脫離本申請案揭示內容的精神與範圍,以及熟知此技藝之人士可進行各種變化、取代與替換,而不脫離本申請案揭示內容之精神與範圍。
Claims (10)
- 一種半導體結構,其包括:基板;傳導互連,其係自該基板暴露;鈍化結構,其覆蓋該基板以及該傳導互連的部分;凸塊下金屬(UBM)墊,其係位於該鈍化結構的上方並且與該傳導互連的該暴露部分接觸;以及導體,其係位於該UBM墊上方,其中該導體係包含一頂部表面、自該頂部表面延伸且包含一第一梯度的第一傾斜外表面,以及第二傾斜外表面,其係自該第一傾斜外表面的端部延伸至該UBM墊,並且包含實質小於該第一梯度的第二梯度,及該第一梯度和該第二梯度為固定。
- 如請求項1所述之半導體結構,其中該第二傾斜外表面係自該第一傾斜外表面突出實質大於或等於約1um。
- 如請求項1所述之半導體結構,其中該第一梯度或該第二梯度係實質小於90°。
- 一種半導體結構,其包括:基板;傳導互連,其係自該基板暴露;鈍化結構,其覆蓋該基板以及該傳導互連的部分;凸塊下金屬(UBM)墊,其係位於該鈍化結構上方並且與該傳導互連的暴露部分接觸;傳導基部,其係位於該UBM墊上並且包含第一頂部表面與自該UBM墊延伸至該第一頂部表面的第一外表面,其中該第一外表 面的一剖視圖是呈現一第一直線;以及傳導頂部,其係位於該傳導基部的該第一頂部表面上,並且包含第二頂部表面以及自該第一頂部表面延伸至該第二頂部表面的第二外表面,其中該第二外表面的剖視圖是呈現相異於該第一直線的一第二直線,其中該傳導基部與該UBM墊之間的界面之長度係實質大於平行於該第二頂部表面的該傳導頂部之最長長度,以及該第一外表面與該UBM墊之間的第一角度係實質小於該第二外表面與該傳導基部之間的第二角度,以及該第一角度與該第二角度均小於90度。
- 如請求項4所述之半導體結構,其中該傳導頂部係與該傳導基部一體成形。
- 如請求項4所述之半導體結構,其中該傳導基部與該UBM墊之間的該界面之該長度係比平行於該第二頂部表面的該傳導頂部之該最長長度大約2um。
- 如請求項4所述之半導體結構,其中該傳導基部的高度與該傳導頂部的高度之比例係約1:5。
- 一種製造半導體結構的方法,其包括:形成自基板暴露的傳導互連;在該傳導互連與該基板上方,置放圖案化的鈍化結構;在該鈍化結構上方以及該傳導互連上,置放UBM墊;在該UBM墊上方,置放光阻;形成穿過該光阻的開口;以及在該開口內置放傳導材料,以形成導體,其中該導體包含頂部表面、自該頂部表面延伸且包含第一梯度的第一傾斜外表面,以及第二傾斜外表面,其係自該第一傾 斜外表面的端部延伸至該UBM墊並且包含實質小於該第一梯度的第二梯度,及該第一梯度和該第二梯度為固定。
- 如請求項8所述之方法,其中該第一傾斜外表面係與該開口的第一側壁共形,以及第二傾斜外表面係與該開口的第二側壁共形。
- 如請求項8所述之方法,其中該光阻的該開口係包含第一開口以及與自該UBM墊延伸至該第一開口的第二開口,以及該第二開口的長度係實質大於該第一開口的長度,或包含以該第一梯度傾斜的第一側壁以及以該第二梯度傾斜的第二側壁。
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