CN101803023B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101803023B
CN101803023B CN200880106479XA CN200880106479A CN101803023B CN 101803023 B CN101803023 B CN 101803023B CN 200880106479X A CN200880106479X A CN 200880106479XA CN 200880106479 A CN200880106479 A CN 200880106479A CN 101803023 B CN101803023 B CN 101803023B
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CN
China
Prior art keywords
diffusion layer
column
gate
semiconductor device
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200880106479XA
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English (en)
Chinese (zh)
Other versions
CN101803023A (zh
Inventor
舛冈富士雄
中村广记
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Unisantis Electronics Singapore Pte Ltd
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Unisantis Electronics Singapore Pte Ltd
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Publication of CN101803023A publication Critical patent/CN101803023A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0179—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN200880106479XA 2007-08-02 2008-05-27 半导体器件 Expired - Fee Related CN101803023B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007201687A JP5122212B2 (ja) 2007-08-02 2007-08-02 半導体装置
JP2007-201687 2007-08-02
PCT/JP2008/059731 WO2009016880A1 (ja) 2007-08-02 2008-05-27 半導体装置

Publications (2)

Publication Number Publication Date
CN101803023A CN101803023A (zh) 2010-08-11
CN101803023B true CN101803023B (zh) 2012-05-23

Family

ID=40304119

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880106479XA Expired - Fee Related CN101803023B (zh) 2007-08-02 2008-05-27 半导体器件

Country Status (7)

Country Link
US (1) US7919990B2 (https=)
EP (1) EP2175489B1 (https=)
JP (1) JP5122212B2 (https=)
KR (1) KR101128117B1 (https=)
CN (1) CN101803023B (https=)
TW (1) TWI443806B (https=)
WO (1) WO2009016880A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444694B2 (ja) * 2008-11-12 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
SG165252A1 (en) 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
JP4487221B1 (ja) 2009-04-17 2010-06-23 日本ユニサンティスエレクトロニクス株式会社 半導体装置
JP5032532B2 (ja) 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006378B2 (ja) 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006379B2 (ja) 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5006375B2 (ja) * 2009-12-10 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5128630B2 (ja) * 2010-04-21 2013-01-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US9318607B2 (en) * 2013-07-12 2016-04-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
JP5677643B1 (ja) * 2013-08-08 2015-02-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
JP5677642B1 (ja) * 2013-08-08 2015-02-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
US9373623B2 (en) * 2013-12-20 2016-06-21 Taiwan Semiconductor Manufacturing Company Limited Multi-layer semiconductor structures for fabricating inverter chains
US9653457B2 (en) 2015-01-16 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked device and associated layout structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308782A (en) * 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
US6461900B1 (en) * 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113661A (ja) * 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPS6337633A (ja) * 1986-07-31 1988-02-18 Nec Corp 半導体集積回路装置
JPH0770613B2 (ja) * 1988-02-29 1995-07-31 日本電気株式会社 半導体集積回路の製造方法
US5258635A (en) 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
JP2703970B2 (ja) * 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JP3057661B2 (ja) 1988-09-06 2000-07-04 株式会社東芝 半導体装置
JP2950558B2 (ja) 1989-11-01 1999-09-20 株式会社東芝 半導体装置
JP3325072B2 (ja) * 1992-03-02 2002-09-17 モトローラ・インコーポレイテッド 半導体メモリ装置
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
TW377493B (en) * 1996-12-27 1999-12-21 Matsushita Electric Industrial Co Ltd Semiconductor integrated circuit device
JP4014708B2 (ja) * 1997-08-21 2007-11-28 株式会社ルネサステクノロジ 半導体集積回路装置の設計方法
JP2004079694A (ja) * 2002-08-14 2004-03-11 Fujitsu Ltd スタンダードセル
JP5130596B2 (ja) * 2007-05-30 2013-01-30 国立大学法人東北大学 半導体装置
JP2009037115A (ja) * 2007-08-03 2009-02-19 Sony Corp 半導体装置およびその製造方法、並びに表示装置
US8188537B2 (en) * 2008-01-29 2012-05-29 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308782A (en) * 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
US6461900B1 (en) * 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration

Also Published As

Publication number Publication date
US20100194438A1 (en) 2010-08-05
EP2175489A4 (en) 2012-08-22
TWI443806B (zh) 2014-07-01
US7919990B2 (en) 2011-04-05
KR101128117B1 (ko) 2012-07-12
KR20100059829A (ko) 2010-06-04
WO2009016880A1 (ja) 2009-02-05
TW200908292A (en) 2009-02-16
JP5122212B2 (ja) 2013-01-16
EP2175489A1 (en) 2010-04-14
JP2009038226A (ja) 2009-02-19
EP2175489B1 (en) 2013-07-24
CN101803023A (zh) 2010-08-11

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.

Free format text: FORMER OWNER: UNISANTIS ELECTRONICS JAPAN LIMITED

Effective date: 20111116

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20111116

Address after: Peninsular Plaza, Singapore

Applicant after: Unisantis Electronics Singapore Pte. Ltd.

Address before: Tokyo, Japan

Applicant before: Unisantis Electronics Singapore Pte. Ltd.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120523