WO2009016880A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009016880A1
WO2009016880A1 PCT/JP2008/059731 JP2008059731W WO2009016880A1 WO 2009016880 A1 WO2009016880 A1 WO 2009016880A1 JP 2008059731 W JP2008059731 W JP 2008059731W WO 2009016880 A1 WO2009016880 A1 WO 2009016880A1
Authority
WO
WIPO (PCT)
Prior art keywords
row
column
sgt
sgts
cmos inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059731
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Fujio Masuoka
Hiroki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisantis Electronics Japan Ltd
Original Assignee
Unisantis Electronics Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Japan Ltd filed Critical Unisantis Electronics Japan Ltd
Priority to EP08764759.0A priority Critical patent/EP2175489B1/en
Priority to CN200880106479XA priority patent/CN101803023B/zh
Priority to KR1020107004627A priority patent/KR101128117B1/ko
Publication of WO2009016880A1 publication Critical patent/WO2009016880A1/ja
Priority to US12/697,683 priority patent/US7919990B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0179—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
PCT/JP2008/059731 2007-08-02 2008-05-27 半導体装置 Ceased WO2009016880A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08764759.0A EP2175489B1 (en) 2007-08-02 2008-05-27 Semiconductor device
CN200880106479XA CN101803023B (zh) 2007-08-02 2008-05-27 半导体器件
KR1020107004627A KR101128117B1 (ko) 2007-08-02 2008-05-27 반도체 장치
US12/697,683 US7919990B2 (en) 2007-08-02 2010-02-01 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007201687A JP5122212B2 (ja) 2007-08-02 2007-08-02 半導体装置
JP2007-201687 2007-08-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/697,683 Continuation US7919990B2 (en) 2007-08-02 2010-02-01 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2009016880A1 true WO2009016880A1 (ja) 2009-02-05

Family

ID=40304119

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059731 Ceased WO2009016880A1 (ja) 2007-08-02 2008-05-27 半導体装置

Country Status (7)

Country Link
US (1) US7919990B2 (https=)
EP (1) EP2175489B1 (https=)
JP (1) JP5122212B2 (https=)
KR (1) KR101128117B1 (https=)
CN (1) CN101803023B (https=)
TW (1) TWI443806B (https=)
WO (1) WO2009016880A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237359A (zh) * 2010-04-21 2011-11-09 日本优尼山帝斯电子株式会社 半导体器件

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444694B2 (ja) * 2008-11-12 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
SG165252A1 (en) 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
JP4487221B1 (ja) 2009-04-17 2010-06-23 日本ユニサンティスエレクトロニクス株式会社 半導体装置
JP5032532B2 (ja) 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006378B2 (ja) 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006379B2 (ja) 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5006375B2 (ja) * 2009-12-10 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US9318607B2 (en) * 2013-07-12 2016-04-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
JP5677643B1 (ja) * 2013-08-08 2015-02-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
JP5677642B1 (ja) * 2013-08-08 2015-02-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
US9373623B2 (en) * 2013-12-20 2016-06-21 Taiwan Semiconductor Manufacturing Company Limited Multi-layer semiconductor structures for fabricating inverter chains
US9653457B2 (en) 2015-01-16 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked device and associated layout structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113661A (ja) * 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPH0271556A (ja) 1988-09-06 1990-03-12 Toshiba Corp 半導体装置
JPH02188966A (ja) 1989-01-17 1990-07-25 Toshiba Corp Ｍｏｓ型半導体装置
JPH03145761A (ja) 1989-11-01 1991-06-20 Toshiba Corp 半導体装置
JPH0669441A (ja) * 1992-03-02 1994-03-11 Motorola Inc 半導体メモリ装置
JP2003179160A (ja) * 2001-10-18 2003-06-27 Chartered Semiconductor Mfg Ltd 縦形デバイスの集積化を用いて自己整合性ｃｍｏｓインバータを形成する方法
JP2004079694A (ja) * 2002-08-14 2004-03-11 Fujitsu Ltd スタンダードセル

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337633A (ja) * 1986-07-31 1988-02-18 Nec Corp 半導体集積回路装置
JPH0770613B2 (ja) * 1988-02-29 1995-07-31 日本電気株式会社 半導体集積回路の製造方法
US5258635A (en) 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
US5308782A (en) * 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
TW377493B (en) * 1996-12-27 1999-12-21 Matsushita Electric Industrial Co Ltd Semiconductor integrated circuit device
JP4014708B2 (ja) * 1997-08-21 2007-11-28 株式会社ルネサステクノロジ 半導体集積回路装置の設計方法
JP5130596B2 (ja) * 2007-05-30 2013-01-30 国立大学法人東北大学 半導体装置
JP2009037115A (ja) * 2007-08-03 2009-02-19 Sony Corp 半導体装置およびその製造方法、並びに表示装置
US8188537B2 (en) * 2008-01-29 2012-05-29 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113661A (ja) * 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPH0271556A (ja) 1988-09-06 1990-03-12 Toshiba Corp 半導体装置
JPH02188966A (ja) 1989-01-17 1990-07-25 Toshiba Corp Ｍｏｓ型半導体装置
JPH03145761A (ja) 1989-11-01 1991-06-20 Toshiba Corp 半導体装置
JPH0669441A (ja) * 1992-03-02 1994-03-11 Motorola Inc 半導体メモリ装置
JP2003179160A (ja) * 2001-10-18 2003-06-27 Chartered Semiconductor Mfg Ltd 縦形デバイスの集積化を用いて自己整合性ｃｍｏｓインバータを形成する方法
JP2004079694A (ja) * 2002-08-14 2004-03-11 Fujitsu Ltd スタンダードセル

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
S. WATANABE; K. TSUCHIDA; D. TAKASHIMA; Y OOWAKI; A. NITAYAMA; K. HIEDA; H. TAKATO; K. SUNOUCHI; F. HORIGUCHI; K. OHUCHI: "A Novel Circuit Technology with Surrounding Gate Transistors (SGT's) for Ultra High Density DRAM's", IEEE JSSC, vol. 30, no. 9, 71119
See also references of EP2175489A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237359A (zh) * 2010-04-21 2011-11-09 日本优尼山帝斯电子株式会社 半导体器件

Also Published As

Publication number Publication date
US20100194438A1 (en) 2010-08-05
EP2175489A4 (en) 2012-08-22
TWI443806B (zh) 2014-07-01
US7919990B2 (en) 2011-04-05
KR101128117B1 (ko) 2012-07-12
KR20100059829A (ko) 2010-06-04
TW200908292A (en) 2009-02-16
JP5122212B2 (ja) 2013-01-16
CN101803023B (zh) 2012-05-23
EP2175489A1 (en) 2010-04-14
JP2009038226A (ja) 2009-02-19
EP2175489B1 (en) 2013-07-24
CN101803023A (zh) 2010-08-11

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