CN101748383A - 用于生产含SiO2的芯片用绝缘层的硅化合物 - Google Patents

用于生产含SiO2的芯片用绝缘层的硅化合物 Download PDF

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CN101748383A
CN101748383A CN200910174943A CN200910174943A CN101748383A CN 101748383 A CN101748383 A CN 101748383A CN 200910174943 A CN200910174943 A CN 200910174943A CN 200910174943 A CN200910174943 A CN 200910174943A CN 101748383 A CN101748383 A CN 101748383A
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silane
propyl
triethoxysilicane
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methyl
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E·米
H·劳勒德
H·克莱因
J·蒙基维茨
I·萨沃普洛斯
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Evonik Operations GmbH
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Abstract

本发明涉及一种制备含SiO2的芯片用绝缘层以及用于该目的的特定前体的应用。本发明还涉及可以这种方式获得的绝缘层，以及用这种绝缘层获得的芯片。

Description

用于生产含SiO2的芯片用绝缘层的硅化合物
本申请是于2006年8月21日进入中国的PCT申请“用于生产含SiO2的芯片用绝缘层的硅化合物”(国际申请号：PCT/EP2004/053669，国际申请日：2004年12月22日，中国申请号：200480041912.8)的分案申请。
技术领域
本发明涉及生产含SiO2的芯片用绝缘层的方法以及用于该目的的特定前体的应用。本发明还涉及通过该方法获得的绝缘层以及用此种绝缘层制得的芯片。
背景技术
人们一直致力于通过各种方法获得性能更好的电脑芯片，例如增加晶体管密度和不断实现小型化。但是，以高纯硅为基材的芯片常面对高成本的压力。这意味着，首先，研制出具有改良性能的新型绝缘层是一种成功，其次，必须降低生产此种绝缘层的成本。绝缘作用基于通过绝缘层将两种电荷隔绝，使电荷间的静电作用力减弱。这样相邻交联点的电容性作用也被减弱。
在目前的芯片生产中，绝缘层主要由基于SiO2的硅质层构成。在各种硅烷中特别优选四乙氧基硅烷(TEOS)作为生产这种硅质层的前体。TEOS具有较好的可加工性。这种材料所能达到的绝缘作用能够满足目前的要求。用TEOS制得的绝缘层通常具有良好的机械性能。其可通过CVD(化学气相沉积)法或旋涂法进行制备(Andreas Weber，“Chemical Vapordeposition-eine
Figure G2009101749435D0000011
”，Spektrum derWissenschaft，1996年4月，86-90页；Michael McCoz，“Completing thecircuit”C&EN，2000年11月，17-24页)。
发明内容
本发明目的在于提供另一反应前体用于生产芯片用绝缘层。
根据本发明，该目的已实现，正如在权利要求中阐明的。
令人惊奇地发现，下列特定硅化合物可作为反应前体以有利地以简单、经济和有效的方式生产芯片用绝缘层：乙烯基烷氧基硅烷、烷基烷氧基硅烷、烷基芳基烷氧基硅烷、芳基烷氧基硅烷、原硅酸甲酯、原硅酸C3-C5-烷基酯、乙二醇原硅酸酯、聚醚原硅酸酯、氢烷氧基硅烷、氢芳氧基硅烷、烷基氢硅烷、烷基氢烷氧基硅烷、二烷基氢烷氧基硅烷、芳基氢硅烷、芳基氢烷氧基硅烷，乙酰氧基硅烷、硅氮烷、硅氧烷、具有至少一个乙酰基、叠氮基、氨基、氰基、氰氧基、异氰酸根合(isocyanato)或酮肟根合(ketoximato)基的有机官能硅烷、含至少一个杂环的有机官能硅烷，其中硅原子可位于杂环本身上或与杂环共价键合、至少上述两种硅化合物的混合物、四乙氧基硅烷与至少上述一种硅化合物的混合物。其中烷氧基基团优选甲氧基和乙氧基。根据本发明，上述硅化合物可作为反应前体，有利地通过CVD技术或旋涂法生产含SiO2的芯片用绝缘层。根据本发明获得的芯片用绝缘层有利地具有好性能和有利的成本。
本发明因此提供生产含SiO2的芯片用绝缘层的方法，其中至少一种下列硅化合物被用作前体：乙烯基硅烷、烷基烷氧基硅烷、烷基芳氧基硅烷、芳基烷氧基硅烷、原硅酸C1-和C3-C5-烷基酯、具有乙二醇基团的原硅酸酯、具有聚醚基团的原硅酸酯、氢烷氧基硅烷、氢芳氧基硅烷、烷基氢硅烷、烷基氢烷氧基硅烷、二烷基氢烷氧基硅烷、芳基氢硅烷、芳基氢烷氧基硅烷、乙酰氧基硅烷、硅氮烷、硅氧烷、具有至少一个乙酰基、叠氮基、氨基、氰基、氰氧基、异氰酸根合或酮肟根合基的有机官能硅烷、含至少一个杂环的有机官能硅烷，其中硅原子可本身位于杂环上或与杂环共价键合、至少上述两种硅化合物的混合物、四乙氧基硅烷与至少上述一种硅化合物的混合物。
可根据本发明使用的特别优选但非涵盖全部的前体实例如下所述：
乙烯基甲氧基硅烷，如乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷，具有聚醚或乙二醇基团以及基本符合下式的乙烯基硅烷：
Figure G2009101749435D0000031
其中R1＝-(CH2)-、-(CH2)2-、-(CH2)3-、-(CH2)4-、-(CH2)5-、-(CH2)6-，x＝0或1，n＝1至40，优选1至15，特别是1至10，R＝H、-CH3、-C2H5、-C3H7、-C4H9、-C5H11、-C6H13，其中R基团也可是支链的烷基基团，如乙烯基三(甲氧基乙氧基)硅烷、乙烯基烷基烷氧基硅烷，如乙烯基甲基二烷氧基硅烷、以及乙烯基芳基烷氧基硅烷、甲基三甲氧基硅烷、乙基三甲氧基硅烷、乙基三乙氧基硅烷、异丙基三甲氧基硅烷和正丙基三甲氧基硅烷、异丙基三乙氧基硅烷和正丙基三乙氧基硅烷、异丁基三甲氧基硅烷和正丁基三甲氧基硅烷、异丁基三乙氧基硅烷和正丁基三乙氧基硅烷，叔丁基三甲氧基硅烷，叔丁基三乙氧基硅烷，苯基三甲氧基硅烷，苯基三乙氧基硅烷，正丙甲基二甲氧基硅烷，原硅酸甲酯，原硅酸正丙酯，原硅酸四丁基乙二醇酯，戊基三甲氧基硅烷，二(甲基三亚乙基乙二醇)二甲基硅烷，2-(环己-3-烯基)乙基三乙氧基硅烷，环己基甲基二甲氧基硅烷，环己基三甲氧基硅烷，环戊基甲基二甲氧基硅烷，环戊基三甲氧基硅烷，二异丁基二甲氧基硅烷，二异丙基二甲氧基硅烷，二环戊基二甲氧基硅烷，二甲基二乙氧基硅烷，二苯基二甲氧基硅烷，乙烯基三乙酰氧基硅烷，2-苯乙基三乙氧基硅烷，2-苯乙基甲基二乙氧基硅烷，3-甲基丙烯酰氧基丙基三甲氧基硅烷，3-丙烯酰氧基丙基三甲氧基硅烷，3-甲基丙烯酰氧基-2-甲丙基三甲氧基硅烷，3-丙烯酰氧基-2-甲丙基三甲氧基硅烷，甲基二乙氧基硅烷，甲丙基二乙氧基硅烷，甲丙基二甲氧基硅烷，三甲氧基硅烷，三乙氧基硅烷，二甲基乙氧基硅烷，三乙基硅烷，甲基三乙酰氧基硅烷，乙基三乙酰氧基硅烷，乙烯基三乙酰氧基硅烷，二叔丁氧基二乙酰氧基硅烷，七甲基二硅氮烷，六甲基二硅氮烷，N，O-二(三甲基甲硅烷基)乙酰胺，1，3-二乙烯基四甲基二硅氮烷，六甲基二硅氧烷，1，3-二乙烯基四甲基二硅氧烷，1，1，3，3-四甲基二硅氧烷，3-乙酰氧基丙基三甲氧基硅烷，3-乙酰氧基丙基三乙氧基硅烷，三甲基甲硅烷基乙酸酯，3-叠氮基丙基三乙氧基硅烷，N-(正丁基)-3-氨丙基三甲氧基硅烷，3-氨丙基三甲氧基硅烷，3-氨丙基三乙氧基硅烷，3-氨基-2-甲丙基三乙氧基硅烷，3-氨丙基甲基二甲氧基硅烷、3-氨丙基甲基二乙氧基硅烷，3-氰丙基三乙氧基硅烷，三甲基甲硅烷基腈，3-氰氧基丙基三甲氧基硅烷，3-氰氧基丙基三乙氧基硅烷，3-异氰酸根合丙基三甲氧基硅烷，异氰酸根合丙基三乙氧基硅烷，甲基三(甲乙基酮肟根合)硅烷，N-(1-三乙氧基甲硅烷基)-乙基吡咯烷酮-2，3-(4，5-二氢咪唑)丙基三乙氧基硅烷，1-三甲基甲硅烷基-1，2，4-三唑，3-吗啉代丙基甲基二乙氧基硅烷，3-吗啉代丙基三乙氧基硅烷和2，2-二甲氧基-1-氧-2-硅-6，7-苯并环庚烷、以及缩合硅烷或共缩合硅烷，以及由例如上述提到的前体的一种或多种衍生的硅氧烷低聚物和聚硅氧烷，比如，乙烯基三甲氧基硅烷低聚物(
Figure G2009101749435D0000041
6490)，乙烯基三乙氧基硅烷低聚物(
Figure G2009101749435D0000042
6498)以及乙烯基/烷基硅氧烷共低聚物(
Figure G2009101749435D0000043
6590)，仅举出少数几个例子，或者通过举例但不限制的方法可在EP 0716127A2和EP 0716128A2中找到的一些共缩合低聚硅氧烷(包括
Figure G2009101749435D0000044
HS 2627、
Figure G2009101749435D0000045
HS 2909、
Figure G2009101749435D0000046
HS 2776、HS 2775、
Figure G2009101749435D0000048
HS2926)。
具体实施方式
在本发明的方法中，含SiO2的芯片用绝缘层的生产优先通过CVD技术或旋涂法以其本身已知的方式实施。
通常，采用CVD技术生产含SiO2的绝缘层的方法如下所述实施：
在一合适的反应容器中，例如，Applied Centura HAT或NovellusConcept One 200，上述基于硅的前体或前体混合物可被蒸发并在热的表面，如硅晶片上进行反应，形成固体层状材料。对该方法近期的改进，如RPCVD(减压化学气相沉积法)、LPCVD(低压化学气相沉积法)和PECVD(等离子体增强化学气相沉积法)，被发现是有利的方法，因其可在有时温度显著降低的条件下以较快的速度沉积。
采用旋涂法生产含SiO2的芯片用绝缘层的过程介绍如下：
液体含硅化合物、液体含硅化合物的混合物或这些化合物在合适的可蒸发溶剂中的溶液通常被涂覆在硅晶片的表面，通过晶片的旋转形成均匀的薄膜。用这种方式生成的薄膜可通过随后在20至500℃下进行干燥以固化。
本发明还提供通过本发明方法获得的芯片用绝缘层。
本发明也提供芯片，其绝缘层是采用本发明方法获得的。
此外，本发明提供上述前体在芯片用绝缘层的生产中根据本发明的应用。

Claims (6)

1.一种生产含SiO2的芯片用绝缘层的方法。其中至少一种下述硅化合物被用作前体：烷基烷氧基硅烷，烷基芳基烷氧基硅烷，芳基烷氧基硅烷，C1-和C3-C5-烷基原硅酸酯，具有乙二醇基团的原硅酸酯，具有聚醚基团的原硅酸酯，氢烷氧基硅烷，氢芳氧基硅烷，烷基氢硅烷，烷基氢烷氧基硅烷，二烷基氢烷氧基硅烷，芳基氢硅烷，芳基氢烷氧基硅烷，乙酰氧基硅烷，硅氮烷，硅氧烷，具有至少一个乙酰氧基、叠氮基、氨基、氰基、氰氧基、异氰酸根合或酮肟根合基的有机官能硅烷，含至少一个杂环的有机官能硅烷，其中硅原子可位于杂环本身上或与杂环共价键合，至少上述两种硅化合物的混合物，以及四乙氧基硅烷与至少上述一种硅化合物的混合物。
2.根据权利要求1的方法，其中通过CVD技术或旋涂法实施对含SiO2的芯片用绝缘层的生产。
3.根据权利要求1或2的方法，其中至少下述一种硅化合物被使用：乙烯基三甲氧基硅烷，乙烯基三乙氧基硅烷，具有聚醚或乙二醇基团的乙烯基硅烷，乙烯基三(甲氧基乙氧基)硅烷，乙烯基甲基二烷氧基硅烷，乙烯基芳基烷氧基硅烷，甲基三甲氧基硅烷，乙基三甲氧基硅烷，乙基三乙氧基硅烷，丙基三甲氧基硅烷，丙基三乙氧基硅烷，丁基三甲氧基硅烷，丁基三乙氧基硅烷，苯基三甲氧基硅烷，苯基三乙氧基硅烷，丙甲基二甲氧基硅烷，原硅酸甲酯，原硅酸正丙酯，原硅酸四丁基乙二醇酯，戊基三甲氧基硅烷，二(甲基三亚乙基乙二醇)二甲基硅烷，2-(环己-3-烯基)乙基三乙氧基硅烷，环己基甲基二甲氧基硅烷，环己基三甲氧基硅烷，环戊基甲基二甲氧基硅烷，环戊基三甲氧基硅烷，二异丁基二甲氧基硅烷，二异丙基二甲氧基硅烷，二环戊基二甲氧基硅烷，二甲基二乙氧基硅烷，二苯基二甲氧基硅烷，乙烯基三乙酰氧基硅烷，2-苯乙基三乙氧基硅烷，2-苯乙基甲基二乙氧基硅烷，3-甲丙烯酰氧基丙基三甲氧基硅烷，3-丙烯酰氧基丙基三甲氧基硅烷，3-甲丙烯酰氧基-2-甲丙基三甲氧基硅烷，3-丙烯酰氧基-2-甲丙基三甲氧基硅烷，甲基二乙氧基硅烷，甲丙基二乙氧基硅烷，甲丙基二甲氧基硅烷，三甲氧基硅烷，三乙氧基硅烷，二甲基乙氧基硅烷，三乙基硅烷，甲基三乙酰氧基硅烷，乙基三乙酰氧基硅烷，乙烯基三乙酰氧基硅烷，二叔丁氧基二乙酰氧基硅烷，七甲基二硅氮烷，六甲基二硅氮烷，N，O-二(三甲基甲硅烷基)乙酰胺，1，3-二乙烯基四甲基二硅氮烷，六甲基二硅氧烷，1，3-二乙烯基四甲基二硅氧烷，1，1，3，3-四甲基二硅氧烷，3-乙酰氧基丙基三甲氧基硅烷，3-乙酰氧基丙基三乙氧基硅烷，三甲基甲硅烷基乙酸酯，3-叠氮基丙基三乙氧基硅烷，N-(正丁基)-3-氨丙基三甲氧基硅烷，3-氨丙基三甲氧基硅烷，3-氨丙基甲基二甲氧基硅烷，3-氨丙基三乙氧基硅烷，3-氨基-2-甲丙基三乙氧基硅烷，3-氨丙基甲基二甲氧基硅烷，3-氨丙基甲基二乙氧基硅烷，3-氰丙基三乙氧基硅烷，三甲基甲硅烷基腈，3-氰氧基丙基三甲氧基硅烷，3-氰氧基丙基三乙氧基硅烷，3-异氰酸根合丙基三甲氧基硅烷，异氰酸根合丙基三乙氧基硅烷，甲基三(甲乙基酮肟根合)硅烷，N-(1-三乙氧基甲硅烷基)-乙基吡咯烷酮-2，3-(4，5-二氢咪唑)丙基三乙氧基硅烷，1-三甲基甲硅烷基-1，2，4-三唑，3-吗啉代丙基甲基二乙氧基硅烷，3-吗啉代丙基三乙氧基硅烷和2，2-二甲氧基-1-氧-2-硅-6，7-苯并环庚烷以及缩合硅烷或共缩合硅烷，硅氧烷低聚物和聚硅氧烷。
4.通过权利要求1至3任一项所述方法获得的芯片用绝缘层。
5.具有通过权利要求1至3任一项所述方法获得的绝缘层的芯片。
6.权利要求1至3任一项的方法中所述的前体生产芯片用绝缘层的应用。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107922443A (zh) * 2015-08-27 2018-04-17 株式会社可乐丽 含硫有机硅化合物和树脂组合物
CN114729447A (zh) * 2019-11-06 2022-07-08 威兰德-沃克公开股份有限公司 用于涂层部件的方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004037675A1 (de) * 2004-08-04 2006-03-16 Degussa Ag Verfahren und Vorrichtung zur Reinigung von Wasserstoffverbindungen enthaltendem Siliciumtetrachlorid oder Germaniumtetrachlorid
DE102005041137A1 (de) 2005-08-30 2007-03-01 Degussa Ag Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid
DE102007007874A1 (de) 2007-02-14 2008-08-21 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Silane
DE102007014107A1 (de) * 2007-03-21 2008-09-25 Evonik Degussa Gmbh Aufarbeitung borhaltiger Chlorsilanströme
US7781306B2 (en) * 2007-06-20 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate and method for manufacturing the same
DE112007003638T5 (de) 2007-09-10 2010-08-12 Fujitsu Ltd., Kawasaki Prozess zum Herstellen einer siliziumhaltigen Beschichtung, siliziumhaltige Beschichtung und Halbleitervorrichtung
DE102007048937A1 (de) * 2007-10-12 2009-04-16 Evonik Degussa Gmbh Entfernung von polaren organischen Verbindungen und Fremdmetallen aus Organosilanen
DE102007050199A1 (de) * 2007-10-20 2009-04-23 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus anorganischen Silanen
DE102007050573A1 (de) * 2007-10-23 2009-04-30 Evonik Degussa Gmbh Großgebinde zur Handhabung und für den Transport von hochreinen und ultra hochreinen Chemikalien
US20090115060A1 (en) 2007-11-01 2009-05-07 Infineon Technologies Ag Integrated circuit device and method
DE102007059170A1 (de) * 2007-12-06 2009-06-10 Evonik Degussa Gmbh Katalysator und Verfahren zur Dismutierung von Wasserstoff enthaltenden Halogensilanen
JP2009277686A (ja) * 2008-05-12 2009-11-26 Taiyo Nippon Sanso Corp 絶縁膜の成膜方法および絶縁膜
DE102008002537A1 (de) * 2008-06-19 2009-12-24 Evonik Degussa Gmbh Verfahren zur Entfernung von Bor enthaltenden Verunreinigungen aus Halogensilanen sowie Anlage zur Durchführung des Verfahrens
DE102008054537A1 (de) * 2008-12-11 2010-06-17 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration
TWI490363B (zh) * 2009-02-06 2015-07-01 Nat Inst For Materials Science 絕緣膜材料、使用該絕緣膜材料的成膜方法及絕緣膜
SG174296A1 (en) * 2009-03-10 2011-10-28 Air Liquide Cyclic amino compounds for low-k silylation
US8932674B2 (en) 2010-02-17 2015-01-13 American Air Liquide, Inc. Vapor deposition methods of SiCOH low-k films
JP2013520841A (ja) * 2010-02-25 2013-06-06 アプライド マテリアルズ インコーポレイテッド プラズマ化学気相堆積による、有機官能基と共にシリコンを含有するハイブリッド前駆体を使用する超低誘電材料
CN101917826B (zh) * 2010-08-03 2013-08-21 东莞市仁吉电子材料有限公司 印刷电路板基板中,增加导电体与非导电高分子介电层之间结合力的方法
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR102139092B1 (ko) * 2012-09-24 2020-07-29 닛산 가가쿠 가부시키가이샤 헤테로원자를 갖는 환상유기기함유 실리콘함유 레지스트 하층막 형성조성물
KR101718744B1 (ko) * 2014-11-03 2017-03-23 (주)디엔에프 실리콘 전구체를 포함하는 박막증착용 조성물 및 이를 이용한 실리콘함유 박막의 제조방법
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
WO2021097022A1 (en) * 2019-11-12 2021-05-20 Applied Materials, Inc. Silyl pseudohalides for silicon containing films

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845054A (en) * 1985-06-14 1989-07-04 Focus Semiconductor Systems, Inc. Low temperature chemical vapor deposition of silicon dioxide films
JPH02259074A (ja) * 1989-03-31 1990-10-19 Anelva Corp Ｃｖｄ方法および装置
JP2851915B2 (ja) * 1990-04-26 1999-01-27 触媒化成工業株式会社 半導体装置
EP0702017B1 (de) * 1994-09-14 2001-11-14 Degussa AG Verfahren zur Herstellung von chloridarmen bzw. chloridfreien aminofunktionellen Organosilanen
DE19516386A1 (de) * 1995-05-04 1996-11-07 Huels Chemische Werke Ag Verfahren zur Herstellung von an chlorfunktionellen Organosilanen armen bzw. freien aminofunktionellen Organosilanen
DE19821156B4 (de) * 1998-05-12 2006-04-06 Degussa Ag Verfahren zur Minderung von Resthalogengehalten und Farbzahlverbesserung in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen und die Verwendung von Aktivkohle dazu
US6022812A (en) * 1998-07-07 2000-02-08 Alliedsignal Inc. Vapor deposition routes to nanoporous silica
DE19849196A1 (de) * 1998-10-26 2000-04-27 Degussa Verfahren zur Neutralisation und Minderung von Resthalogengehalten in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen
EP0999214B1 (de) * 1998-11-06 2004-12-08 Degussa AG Verfahren zur Herstellung von chloridarmen oder chloridfreien Alkoxysilanen
MXPA02002594A (es) * 1999-09-09 2002-08-30 Allied Signal Inc Aparato y metodo mejorados para la planarizacion de circuitos integrados.
US20010038894A1 (en) * 2000-03-14 2001-11-08 Minoru Komada Gas barrier film
DE10100384A1 (de) * 2001-01-05 2002-07-11 Degussa Verfahren zur Modifizierung der Funktionalität von organofunktionellen Substratoberflächen
US6716770B2 (en) * 2001-05-23 2004-04-06 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
US6482754B1 (en) * 2001-05-29 2002-11-19 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
DE10141687A1 (de) * 2001-08-25 2003-03-06 Degussa Siliciumverbindungen enthaltendes Mittel zur Beschichtung von Oberflächen
DE10243022A1 (de) * 2002-09-17 2004-03-25 Degussa Ag Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
DE102004010055A1 (de) * 2004-03-02 2005-09-22 Degussa Ag Verfahren zur Herstellung von Silicium
DE102004037675A1 (de) * 2004-08-04 2006-03-16 Degussa Ag Verfahren und Vorrichtung zur Reinigung von Wasserstoffverbindungen enthaltendem Siliciumtetrachlorid oder Germaniumtetrachlorid
DE102004038718A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reaktor sowie Verfahren zur Herstellung von Silizium
DE102005041137A1 (de) * 2005-08-30 2007-03-01 Degussa Ag Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107922443A (zh) * 2015-08-27 2018-04-17 株式会社可乐丽 含硫有机硅化合物和树脂组合物
CN107922443B (zh) * 2015-08-27 2021-01-26 株式会社可乐丽 含硫有机硅化合物和树脂组合物
CN114729447A (zh) * 2019-11-06 2022-07-08 威兰德-沃克公开股份有限公司 用于涂层部件的方法

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KR20060127139A (ko) 2006-12-11
US20080283972A1 (en) 2008-11-20
JP2007523484A (ja) 2007-08-16
EP1716269A2 (en) 2006-11-02
DE102004008442A1 (de) 2005-09-15

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