KR20060127139A - 칩 위에 SiO2 함유 절연 층을 제조하기 위한 규소화합물 - Google Patents
칩 위에 SiO2 함유 절연 층을 제조하기 위한 규소화합물 Download PDFInfo
- Publication number
- KR20060127139A KR20060127139A KR1020067016646A KR20067016646A KR20060127139A KR 20060127139 A KR20060127139 A KR 20060127139A KR 1020067016646 A KR1020067016646 A KR 1020067016646A KR 20067016646 A KR20067016646 A KR 20067016646A KR 20060127139 A KR20060127139 A KR 20060127139A
- Authority
- KR
- South Korea
- Prior art keywords
- silane
- chip
- insulating layer
- producing
- silicon
- Prior art date
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- 150000003377 silicon compounds Chemical class 0.000 title description 7
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000002243 precursor Substances 0.000 claims abstract description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 7
- -1 glycol radicals Orthosilicates Chemical class 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- 125000000623 heterocyclic group Chemical group 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 229910052605 nesosilicate Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 150000004756 silanes Chemical class 0.000 claims description 7
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229920000570 polyether Polymers 0.000 claims description 5
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 4
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 claims description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 150000004762 orthosilicates Chemical class 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical compound CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 claims description 4
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 125000001651 cyanato group Chemical group [*]OC#N 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 3
- XKRPWHZLROBLDI-UHFFFAOYSA-N dimethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OC)OC XKRPWHZLROBLDI-UHFFFAOYSA-N 0.000 claims description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 3
- 125000001261 isocyanato group Chemical group *N=C=O 0.000 claims description 3
- MONYYUDNZFLUHY-UHFFFAOYSA-N (2-methyl-3-trimethoxysilylpropyl) prop-2-enoate Chemical compound CO[Si](OC)(OC)CC(C)COC(=O)C=C MONYYUDNZFLUHY-UHFFFAOYSA-N 0.000 claims description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 claims description 2
- AOFBJTGHSYNINY-UHFFFAOYSA-N 2-cyclohex-3-en-1-ylethyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)CCC1CCC=CC1 AOFBJTGHSYNINY-UHFFFAOYSA-N 0.000 claims description 2
- DYIUKVBALLNLGQ-UHFFFAOYSA-N 2-methyl-3-triethoxysilylpropan-1-amine Chemical compound CCO[Si](OCC)(OCC)CC(C)CN DYIUKVBALLNLGQ-UHFFFAOYSA-N 0.000 claims description 2
- KHVIAGJJSLUYIT-UHFFFAOYSA-N 3-(4,5-dihydro-1h-imidazol-2-yl)propyl-triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCC1=NCCN1 KHVIAGJJSLUYIT-UHFFFAOYSA-N 0.000 claims description 2
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 claims description 2
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 claims description 2
- DHFNCWQATZVOGB-UHFFFAOYSA-N 3-azidopropyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=[N+]=[N-] DHFNCWQATZVOGB-UHFFFAOYSA-N 0.000 claims description 2
- FMGBDYLOANULLW-UHFFFAOYSA-N 3-isocyanatopropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCN=C=O FMGBDYLOANULLW-UHFFFAOYSA-N 0.000 claims description 2
- ADBORBCPXCNQOI-UHFFFAOYSA-N 3-triethoxysilylpropyl acetate Chemical compound CCO[Si](OCC)(OCC)CCCOC(C)=O ADBORBCPXCNQOI-UHFFFAOYSA-N 0.000 claims description 2
- RHZAAYVDJRHENK-UHFFFAOYSA-N 3-triethoxysilylpropyl cyanate Chemical compound CCO[Si](OCC)(OCC)CCCOC#N RHZAAYVDJRHENK-UHFFFAOYSA-N 0.000 claims description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 2
- YYESBOFUFRHFMY-UHFFFAOYSA-N 3-trimethoxysilylpropyl cyanate Chemical compound CO[Si](OC)(OC)CCCOC#N YYESBOFUFRHFMY-UHFFFAOYSA-N 0.000 claims description 2
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 claims description 2
- VGIURMCNTDVGJM-UHFFFAOYSA-N 4-triethoxysilylbutanenitrile Chemical compound CCO[Si](OCC)(OCC)CCCC#N VGIURMCNTDVGJM-UHFFFAOYSA-N 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- WYUIWUCVZCRTRH-UHFFFAOYSA-N [[[ethenyl(dimethyl)silyl]amino]-dimethylsilyl]ethene Chemical compound C=C[Si](C)(C)N[Si](C)(C)C=C WYUIWUCVZCRTRH-UHFFFAOYSA-N 0.000 claims description 2
- OPARTXXEFXPWJL-UHFFFAOYSA-N [acetyloxy-bis[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)(C)C)OC(C)(C)C OPARTXXEFXPWJL-UHFFFAOYSA-N 0.000 claims description 2
- KXJLGCBCRCSXQF-UHFFFAOYSA-N [diacetyloxy(ethyl)silyl] acetate Chemical compound CC(=O)O[Si](CC)(OC(C)=O)OC(C)=O KXJLGCBCRCSXQF-UHFFFAOYSA-N 0.000 claims description 2
- TVJPBVNWVPUZBM-UHFFFAOYSA-N [diacetyloxy(methyl)silyl] acetate Chemical compound CC(=O)O[Si](C)(OC(C)=O)OC(C)=O TVJPBVNWVPUZBM-UHFFFAOYSA-N 0.000 claims description 2
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 claims description 2
- SXPLZNMUBFBFIA-UHFFFAOYSA-N butyl(trimethoxy)silane Chemical compound CCCC[Si](OC)(OC)OC SXPLZNMUBFBFIA-UHFFFAOYSA-N 0.000 claims description 2
- MEWFSXFFGFDHGV-UHFFFAOYSA-N cyclohexyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCCCC1 MEWFSXFFGFDHGV-UHFFFAOYSA-N 0.000 claims description 2
- SJJCABYOVIHNPZ-UHFFFAOYSA-N cyclohexyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C1CCCCC1 SJJCABYOVIHNPZ-UHFFFAOYSA-N 0.000 claims description 2
- DFLBJDBDZMNGCW-UHFFFAOYSA-N cyclopentylmethyl(dimethoxy)silane Chemical compound CO[SiH](OC)CC1CCCC1 DFLBJDBDZMNGCW-UHFFFAOYSA-N 0.000 claims description 2
- JWCYDYZLEAQGJJ-UHFFFAOYSA-N dicyclopentyl(dimethoxy)silane Chemical compound C1CCCC1[Si](OC)(OC)C1CCCC1 JWCYDYZLEAQGJJ-UHFFFAOYSA-N 0.000 claims description 2
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 claims description 2
- BHZXSECGGBRQHQ-UHFFFAOYSA-N diethoxy-methyl-(2-phenylethyl)silane Chemical compound CCO[Si](C)(OCC)CCC1=CC=CC=C1 BHZXSECGGBRQHQ-UHFFFAOYSA-N 0.000 claims description 2
- UPQSLTRGZOJYDB-UHFFFAOYSA-N diethoxy-methyl-(3-morpholin-4-ylpropyl)silane Chemical compound CCO[Si](C)(OCC)CCCN1CCOCC1 UPQSLTRGZOJYDB-UHFFFAOYSA-N 0.000 claims description 2
- UJTGYJODGVUOGO-UHFFFAOYSA-N diethoxy-methyl-propylsilane Chemical compound CCC[Si](C)(OCC)OCC UJTGYJODGVUOGO-UHFFFAOYSA-N 0.000 claims description 2
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 claims description 2
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 claims description 2
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 claims description 2
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 claims description 2
- DRUOQOFQRYFQGB-UHFFFAOYSA-N ethoxy(dimethyl)silicon Chemical compound CCO[Si](C)C DRUOQOFQRYFQGB-UHFFFAOYSA-N 0.000 claims description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical class C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 2
- ZSMNRKGGHXLZEC-UHFFFAOYSA-N n,n-bis(trimethylsilyl)methanamine Chemical compound C[Si](C)(C)N(C)[Si](C)(C)C ZSMNRKGGHXLZEC-UHFFFAOYSA-N 0.000 claims description 2
- XCOASYLMDUQBHW-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)butan-1-amine Chemical compound CCCCNCCC[Si](OC)(OC)OC XCOASYLMDUQBHW-UHFFFAOYSA-N 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 2
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 claims description 2
- VBSUMMHIJNZMRM-UHFFFAOYSA-N triethoxy(2-phenylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC1=CC=CC=C1 VBSUMMHIJNZMRM-UHFFFAOYSA-N 0.000 claims description 2
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 claims description 2
- XHSMJSNXQUKFBB-UHFFFAOYSA-N triethoxy(3-morpholin-4-ylpropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN1CCOCC1 XHSMJSNXQUKFBB-UHFFFAOYSA-N 0.000 claims description 2
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 claims description 2
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 claims description 2
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 claims description 2
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- HILHCDFHSDUYNX-UHFFFAOYSA-N trimethoxy(pentyl)silane Chemical compound CCCCC[Si](OC)(OC)OC HILHCDFHSDUYNX-UHFFFAOYSA-N 0.000 claims description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 claims description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 2
- SIOVKLKJSOKLIF-HJWRWDBZSA-N trimethylsilyl (1z)-n-trimethylsilylethanimidate Chemical compound C[Si](C)(C)OC(/C)=N\[Si](C)(C)C SIOVKLKJSOKLIF-HJWRWDBZSA-N 0.000 claims description 2
- QHUNJMXHQHHWQP-UHFFFAOYSA-N trimethylsilyl acetate Chemical compound CC(=O)O[Si](C)(C)C QHUNJMXHQHHWQP-UHFFFAOYSA-N 0.000 claims description 2
- LEIMLDGFXIOXMT-UHFFFAOYSA-N trimethylsilyl cyanide Chemical compound C[Si](C)(C)C#N LEIMLDGFXIOXMT-UHFFFAOYSA-N 0.000 claims description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- UNCMIFFGOYZCIC-UHFFFAOYSA-N (2-methyl-3-trimethoxysilylpropyl) 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CC(C)COC(=O)C(C)=C UNCMIFFGOYZCIC-UHFFFAOYSA-N 0.000 claims 1
- FZTPAOAMKBXNSH-UHFFFAOYSA-N 3-trimethoxysilylpropyl acetate Chemical compound CO[Si](OC)(OC)CCCOC(C)=O FZTPAOAMKBXNSH-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- YRMPTIHEUZLTDO-UHFFFAOYSA-N cyclopentyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCCC1 YRMPTIHEUZLTDO-UHFFFAOYSA-N 0.000 claims 1
- DRRZZMBHJXLZRS-UHFFFAOYSA-N n-[3-[dimethoxy(methyl)silyl]propyl]cyclohexanamine Chemical compound CO[Si](C)(OC)CCCNC1CCCCC1 DRRZZMBHJXLZRS-UHFFFAOYSA-N 0.000 claims 1
- UQMGAWUIVYDWBP-UHFFFAOYSA-N silyl acetate Chemical class CC(=O)O[SiH3] UQMGAWUIVYDWBP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- BTHCBXJLLCHNMS-UHFFFAOYSA-N acetyloxysilicon Chemical compound CC(=O)O[Si] BTHCBXJLLCHNMS-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- LQJIYGHLYACICO-UHFFFAOYSA-N butan-2-yl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C(C)CC LQJIYGHLYACICO-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HXLWJGIPGJFBEZ-UHFFFAOYSA-N tert-butyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C(C)(C)C HXLWJGIPGJFBEZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FXSGDOZPBLGOIN-UHFFFAOYSA-N trihydroxy(methoxy)silane Chemical class CO[Si](O)(O)O FXSGDOZPBLGOIN-UHFFFAOYSA-N 0.000 description 1
- JPMBLOQPQSYOMC-UHFFFAOYSA-N trimethoxy(3-methoxypropyl)silane Chemical compound COCCC[Si](OC)(OC)OC JPMBLOQPQSYOMC-UHFFFAOYSA-N 0.000 description 1
- WPSPBNRWECRRPK-UHFFFAOYSA-N trimethyl(1,2,4-triazol-1-yl)silane Chemical compound C[Si](C)(C)N1C=NC=N1 WPSPBNRWECRRPK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract
본 발명은 칩 위에 SiO2 함유 절연 층을 제조하는 방법 및 이러한 목적을 위한 특정한 전구체의 용도에 관한 것이다. 추가로 본 발명은 이러한 방식으로 수득할 수 있는 절연 층 및 또한 당해 절연 층이 제공된 칩에 관한 것이다.
절연 층, CVD 기술, 스핀-온
Description
본 발명은 칩 위에 SiO2 함유 절연 층을 제조하는 방법 및 이러한 목적을 위한 특정한 전구체의 용도에 관한 것이다. 추가로 본 발명은 이러한 방식으로 수득 가능한 절연 층 및 또한 당해 절연 층이 제공된 칩에 관한 것이다.
보다 우수한 성능을 갖는 컴퓨터 칩을 제공하기 위한 노력이 계속되어 왔었고, 이는, 예를 들면, 트랜지스터 밀도를 증가시키고 소형화를 유지시킴으로써 성취할 수 있었다. 동시에, 고순도 규소를 기본으로 하는 칩은 강한 원가 압력에 직면하게 된다. 이는 첫째로 개질된 성질을 갖는 신규한 절연 층이 가끔 성공적이고, 둘째로 또한 당해 층을 저렴하게 제조해야 한다는 것을 의미한다. 절연 효과는 당해 물질로 분리된 2개의 전하들 사이의 정전기력의 감소에 기초한다. 이러한 방식으로, 인접한 배선들 사이의 축전기 상호작용이 감소한다.
요즈음 칩 제조시, 절연 층은 층을 제조하기 위한 전구체로서 특히 광범위한 범위의 실란으로부터의 테트라에톡시실란(TEOS)을 사용하는, Si02를 기본으로하는 규산질 층으로 주로 이루어진다. TEOS는 가공성과 관련하여 소정의 우수한 결과를 갖는다. 당해 물질로 성취 가능한 절연 작용은 이제까지는 충분하였다. TEOS를 사용하여 제조한 층의 기계적 성질은 일반적으로 우수하다. 이들은 CVD(Chemical Vapor Deposition; 화학적 증착) 기술 또는 스핀-온(spin-on) 방법[문헌 참조: Andreas Weber, "Chemical vapordeposion-eine Ubersicht", Spektrum der Wissenschaft, April 1996, pages 86 to 90; Michael McCoy, "Completing the circuit" C&EN, November 2000, pages 17 to 24]으로 제조한다.
본 발명의 목적은 칩 위에 절연 층을 제조하기 위한 전구체를 추가로 제공하는 것이다.
본 발명에 따르면, 이러한 목적은 청구항에 기재된 바대로 성취된다.
따라서, 놀랍게도 비닐알콕시실란, 알킬알콕시실란, 알킬아릴알콕시실란, 아릴알콕시실란, 메틸 오르토실리케이트 및 C3-C5-알킬 오르토실리케이트, 글리콜의 오르토실리케이트, 폴리에테르의 오르토실리케이트, 하이드로젼알콕시실란, 하이드로젼아릴옥시실란, 알킬하이드로젼실란, 알킬하이드로젼알콕시실란, 디알킬하이드로젼알콕시실란, 아릴하이드로젼실란, 아릴하이드로젼알콕시실란, 아세톡시실란, 실라잔, 실록산, 하나 이상의 아세톡시, 아지도, 아미노, 시아노, 시아네이토, 이소시아네이토 또는 케톡시메이토(ketoximato) 그룹을 갖는 유기관능성 실란, 규소 원소가 그 자체로 헤테로사이클에 속하거나 헤테로사이클에 공유 결합할 수 있는 하나 이상의 헤테로사이클을 포함하는 유기관능성 실란으로 이루어진 그룹으로부터 선택된 특정한 규소 화합물, 및 본원에 언급된 종류의 2개 이상의 규소 화합물의 혼합물 및 테트라에톡시실란과 본원에 언급된 종류의 하나 이상의 규소 화합물과의 혼합물을 유리하게는 칩 위에 절연 층을 형성하기 위한 전구체로서 간단하고, 경제 적이고 효과적인 방식으로 사용할 수 있는 것으로 밝혀졌다. 알콕시 그룹으로서, 특히 메톡시 및 에톡시 그룹이 바람직하다. 따라서, 본원에 언급된 규소 화합물은 유리하게는 CVD 기술 또는 스핀-온 방법으로 칩 위에 Si02 함유 절연 층의 제조시 전구체로서 본 발명에 따라 사용할 수 있다. 본 발명에 따라 수득 가능한 칩 위의 절연 층은 유리하게는 성능이 훌륭하고 비용면에서 유리하다.
따라서, 본 발명은 비닐실란, 알킬알콕시실란, 알킬아릴알콕시실란, 아릴알콕시실란, Cl-알킬 오르토실리케이트, C3-C5-알킬 오르토실리케이트, 글리콜 라디칼을 갖는 오르토실리케이트, 폴리에테르 라디칼을 갖는 오르토실리케이트, 하이드로젼알콕시실란, 하이드로젼아릴옥시실란, 알킬하이드로젼실란, 알킬하이드로젼알콕시실란, 디알킬하이드로젼알콕시실란, 아릴하이드로젼실란, 아릴하이드로젼알콕시실란, 아세톡시실란, 실라잔, 실록산, 하나 이상의 아세톡시, 아지도, 아미노, 시아노, 시아네이토, 이소시아네이토 또는 케톡시메이토 그룹을 갖는 유기관능성 실란, 규소 원소가 그 자체로 헤테로사이클에 속하거나 헤테로사이클에 공유 결합할 수 있는 하나 이상의 헤테로사이클을 포함하는 유기관능성 실란으로 이루어진 그룹으로부터 선택된 하나 이상의 규소 화합물, 및 상기에 기재된 종류의 2개 이상의 규소 화합물의 혼합물 및 테트라에톡시실란과 상기에 기재된 종류의 하나 이상의 규소 화합물과의 혼합물을 전구체로서 사용하는, 칩 위에 Si02 함유 절연 층을 제조하는 방법을 제공한다.
본 발명에 따라 사용할 수 있는 특히 바람직하지만 포괄적이지 않은 전구체 로는 비닐알콕시실란, 예를 들면, 비닐트리메톡시실란, 비닐트리에톡시실란, 필수적으로 화학식 (여기서, R1은 -(CH2)-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5- 또는 -(CH2)6- 이고, x는 0 또는 1이고, n은 1내지 40, 바람직하게는 1 내지 15, 특히 1 내지 10이고, R은 H, -CH3, -C2H5, -C3H7, -C4H9, -C5H11, -C6H13이고, 그룹 R은 또한 측쇄의 알킬 라디칼일 수 있다)의 폴리에테르 라디칼 또는 글리콜 라디칼을 갖는 비닐실란, 예를 들면, 비닐트리스(메톡시에톡시)실란, 및 또한 비닐알킬알콕시실란, 예를 들면, 비닐메틸디알콕시실란, 및 또한 비닐아릴알콕시실란, 메틸트리메톡시실란, 에틸트리메톡시실란, 에틸트리에톡시실란, i-프로필트리메톡시실란, n-프로필트리메톡시실란, i-프로필트리에톡시실란, n-프로필트리에톡시실란, i-부틸트리메톡시실란, n-부틸트리메톡시실란, i-부틸트리에톡시실란, n-부틸트리에톡시실란, 3급-부틸트리메톡시실란, 3급-부틸트리에톡시실란, 페닐트리메톡시실란, 페닐트리에톡시실란, n-프로필메틸디메톡시실란, 메틸 오르토실리케이트, n-프로필 오르토실리케이트, 테트라부틸 글리콜 오르토실리케이트, 아밀트리메톡시실란, 비스(메틸트리에틸렌 글리콜)디메틸실란, 2-(사이클로헥스-3-에닐)에틸트리에톡시실란, 사이클로헥실메틸디메톡시실란, 사이클로헥실트리메톡시실란, 사이클로펜틸메틸디메톡시실란, 사이클로펜틸트리메톡시실란, 디-i-부틸디메톡시실란, 디-i-프로필디메톡시실란, 디사이클로펜틸디메톡시실란, 디메틸디에톡시실란, 디페닐디메톡시실란, 비닐트리아세톡시실란, 2-페닐에틸트리에톡시실란, 2-페 닐에틸메틸디에톡시실란, 3-메타크릴옥시프로필트리메톡시실란, 3-아크릴옥시프로필트리메톡시실란, 3-메타크릴옥시-2-메틸프로필트리메톡시실란, 3-아크릴옥시-2-메틸프로필-트리메톡시실란, 메틸디에톡시실란, 메틸프로필디에톡시실란, 메틸프로필디메톡시실란, 트리메톡시실란, 트리에톡시실란, 디메틸에톡시실란, 트리에틸실란, 메틸트리아세톡시실란, 에틸트리아세톡시실란, 비닐트리아세톡시실란, 디-3급-부톡시디아세톡시실란, 헵타메틸디실라잔, 헥사메틸디실라잔, N,O-비스(트리메틸실릴)아세트아미드, 1,3-디비닐테트라메틸디실라잔, 헥사메틸디실록산, 1,3-디비닐테트라메틸디실록산, 1,1,3,3-테트라메틸디실록산, 3-아세톡시프로필트리메톡시실란, 3-아세톡시프로필트리에톡시실란, 트리메틸실릴아세테이트, 3-아지도프로필트리에톡시실란, N-(n-부틸)-3-아미노프로필트리메톡시실란, 3-아미노프로필트리메톡시실란, 3-아미노프로필트리에톡시실란, 3-아미노-2-메틸프로필트리에톡시실란, 3-아미노프로필메틸디메톡시실란, 3-아미노프로필메틸디에톡시실란, 3-시아노프로필트리에톡시실란, 트리메틸실릴 니트릴, 3-시아네이토프로필트리메톡시실란, 3-시아네이토프로필트리에톡시실란, 3-이소시아네이토프로필트리메톡시실란, 이소시아네이토프로필트리에톡시실란, 메틸트리스(메틸에틸케톡시메이토)실란, N-(1-트리에톡시실릴)-에틸피롤리돈-2, 3-(4,5-디하이드로이미다졸릴)프로필트리에톡시실란, 1-트리메틸실릴-1, 2,4-트리아졸, 3-모르폴리노프로필메틸디에톡시실란, 3-모르폴리노프로필트리에톡시실란 및 2,2-디메톡시-1-옥사-2-실라-6,7-벤조사이클로헵탄 및 또한 축합된 또는 공축합된 실란, 예를 들면, 상기에 기재된 전구체들 중의 하나 이상으로부터 유도된 올리고실록산 및 폴리실록산, 예를 들면, 비닐트리메톡시실란 올리 고머(DYNASYLAN® 6490), 비닐트리에톡시실란 올리고머(DYNASYLAN® 6498) 및 몇몇의 실시예에만 지정되는 비닐/알킬실록산 공올리고머(DYNASYLAN® 6590), 또는 유럽 공개특허공보 제0 716 127 A2호 및 유럽 공개특허공보 제0 716 128 A2호에서 포괄적이지 않지만 예로서 기재된 공축합된 올리고실록산(DYNASYLAN® HS 2627, DYNASYLAN® HS 2909, DYNASYLAN® HS 2776, DYNASYLAN® HS 2775, DYNASYLAN® HS 2926 포함)이 있다.
본 발명의 공정에 있어서, 칩 위에 Si02 함유 절연 층을 제조하는 것은 바람직하게는 CVD 기술 또는 스핀-온 방법을 사용하여 공지된 방법 자체로 수행한다.
일반적으로, CVD 기술에 의한 Si02 함유 절연 층의 제조를 위한 본 발명의 공정은 다음과 같이 수행한다.
적합한 반응기, 예를 들면, 어플라이드 센투라 에이치에이티(Applied Centura HAT) 또는 노벨루스 콘셉트 원(Novellus Concept One) 200에서, 상기에 기재된 규소계 전구체 또는 전구체들의 혼합물을 증기화시키고 뜨거운 표면, 예를 들면, 규소 웨이퍼 위에서 반응하도록 하여, 고체 층 물질을 형성할 수 있다. 이러한 공정의 비교적 최근의 변형 공정, 예를 들면, RPCVD(감압 화학적 증착), LPCVD(저압 화학적 증착) 및 PECVD(플라즈마 증진된 화학적 증착)은 이들이 가끔 상당히 감소된 온도에서 성취되는 증착을 보다 고속으로 가능케 하므로 유리한 것으로 밝혀졌다.
더욱이, 본 발명에 따라 칩 위에 Si02 함유 절연 층을 제조하는 것은 스핀-온 방법(이의 절차는 일반적으로 하기와 같다)으로 수행할 수 있다.
액상의 규소 함유 화합물, 액상의 규소 함유 화합물들의 혼합물 또는 증기화 가능한 적합한 용매 속의 규소 함유 화합물의 용액을 일반적으로 규소 웨이퍼의 표면에 도포하고 웨이퍼를 회전시켜 균일한 박막을 제조한다. 이러한 방식으로 제조된 필름은 20 내지 500℃에서 후속적으로 건조시켜 경화시킬 수 있다.
본 발명은 칩용의 본 발명의 공정으로 수득 가능한 절연 층을 추가로 제공한다.
또한, 본 발명은 본 발명의 공정으로 수득 가능한 절연 층을 갖는 칩을 제공한다.
또한, 본 발명은 칩 위에 절연 층을 제조하기 위한, 본원 명세서에 기재된 전구체의 본 발명에 따르는 용도를 제공한다.
Claims (6)
- 칩 위에 SiO2 함유 절연 층을 제조하는 방법으로서, 비닐실란, 알킬알콕시실란, 알킬아릴알콕시실란, 아릴알콕시실란, C1-알킬 오르토실리케이트, C3-C5-알킬 오르토실리케이트, 글리콜 라디칼을 갖는 오르토실리케이트, 폴리에테르 라디칼을 갖는 오르토실리케이트, 하이드로젼알콕시실란, 하이드로젼아릴옥시실란, 알킬하이드로젼실란, 알킬하이드로젼알콕시실란, 디알킬하이드로젼알콕시실란, 아릴하이드로젼실란, 아릴하이드로젼알콕시실란, 아세톡시실란, 실라잔, 실록산, 하나 이상의 아세톡시, 아지도, 아미노, 시아노, 시아네이토, 이소시아네이토 또는 케톡시메이토(ketoximato) 그룹을 갖는 유기관능성 실란, 규소 원소가 그 자체로 헤테로사이클에 속하거나 헤테로사이클에 공유 결합할 수 있는 하나 이상의 헤테로사이클을 포함하는 유기관능성 실란으로 이루어진 그룹으로부터 선택된 하나 이상의 규소 화합물, 및 상기 언급된 종류의 2개 이상의 규소 화합물의 혼합물 및 테트라에톡시실란과 상기 언급된 종류의 하나 이상의 규소 화합물과의 혼합물이 전구체로서 사용되는 방법.
- 제1항에 있어서, 칩 위에 SiO2 함유 절연 층을 제조하는 것이 CVD(Chemical Vapor Deposition; 화학적 증착) 기술 또는 스핀-온(spin-on) 방법을 사용하여 수행하는, 칩 위에 SiO2 함유 절연 층을 제조하는 방법.
- 제1항 또는 제2항에 있어서, 비닐트리메톡시실란, 비닐트리에톡시실란, 폴리에테르 라디칼 또는 글리콜 라디칼을 갖는 비닐실란, 비닐트리스(메톡시에톡시)실란, 비닐메틸디알콕시실란, 비닐아릴알콕시실란, 메틸트리메톡시실란, 에틸트리메톡시실란, 에틸트리에톡시실란, 프로필트리메톡시실란, 프로필트리에톡시실란, 부틸트리메톡시실란, 부틸트리에톡시실란, 페닐트리메톡시실란, 페닐트리에톡시실란, 프로필메틸디메톡시실란, 메틸 오르토실리케이트, n-프로필 오르토실리케이트, 테트라부틸 글리콜 오르토실리케이트, 아밀트리메톡시실란, 비스(메틸트리에틸렌글리콜)디메틸실란, 2-(사이클로헥스-3-에닐)에틸트리에톡시실란, 사이클로헥실메틸디메톡시실란, 사이클로헥실트리메톡시실란, 사이클로펜틸메틸디메톡시실란, 사이클로펜틸트리메톡시실란, 디-i-부틸디메톡시실란, 디-i-프로필디메톡시실란, 디사이클로펜틸디메톡시실란, 디메틸디에톡시실란, 디페닐디메톡시실란, 비닐트리아세톡시실란, 2-페닐에틸트리에톡시실란, 2-페닐에틸메틸디에톡시실란, 3-메타크릴옥시프로필트리메톡시실란, 3-아크릴옥시프로필트리메톡시실란, 3-메타크릴옥시-2-메틸프로필트리메톡시실란, 3-아크릴옥시-2-메틸프로필트리메톡시실란, 메틸디에톡시실란, 메틸프로필디에톡시실란, 메틸프로필디메톡시실란, 트리메톡시실란, 트리에톡시실란, 디메틸에톡시실란, 트리에틸실란, 메틸트리아세톡시실란, 에틸트리아세톡시실란, 비닐트리아세톡시실란, 디-3급-부톡시디아세톡시실란, 헵타메틸디실라잔, 헥사메틸디실라잔, N,O-비스(트리메틸실릴)아세트아미드, 1,3-디비닐테트라메틸디실라잔, 헥사메틸디실록산, 1,3-디-비닐테트라메틸디실록산, 1,1,3,3-테트라메틸디 실록산, 3-아세톡시프로필트리메톡시실란, 3-아세톡시프로필트리에톡시실란, 트리메틸실릴 아세테이트, 3-아지도프로필트리에톡시실란, N-(n-부틸)-3-아미노프로필트리메톡시실란, 3-아미노프로필트리메톡시실란, 3-아미노프로필트리에톡시실란, 3-아미노-2-메틸프로필트리에톡시실란, 3-아미노프로필메틸디메톡시실란, 3-아미노프로필메틸디에톡시실란, 3-시아노프로필트리에톡시실란, 트리메틸실릴 니트릴, 3-시아네이토프로필트리메톡시실란, 3-시아네이토프로필트리에톡시실란, 3-이소시아네이토프로필트리메톡시실란, 이소시아네이토프로필트리에톡시실란, 메틸트리스(메틸에틸케톡시메이토)실란, N-(1-트리에톡시실릴)에틸피롤리돈-2, 3-(4,5-디하이드로이미다졸릴)프로필트리에톡시실란, 1-트리메틸실릴-1,2,4-트리아졸, 3-모르폴리노프로필메틸디에톡시실란, 3-모르폴리노프로필트리에톡시실란 및 2,2-디메톡시-1-옥사-2-실라-6,7-벤조사이클로헵탄 및 축합된 또는 공축합된 실란, 올리고실록산 및 폴리실록산으로 이루어진 그룹으로부터 선택된 하나 이상의 전구체가 사용되는, 칩 위에 SiO2 함유 절연 층을 제조하는 방법.
- 제1항 내지 제3항 중의 어느 한 항에 따라 수득할 수 있는 칩용 절연 층.
- 제1항 내지 제3항 중의 어느 한 항에 따라 수득할 수 있는 절연 층을 갖는 칩.
- 칩 위에 절연 층을 제조하기 위한, 제1항 내지 제3항 중의 어느 한 항에 기 재된 전구체의 용도.
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- 2004-12-22 KR KR1020067016646A patent/KR20060127139A/ko active Search and Examination
- 2004-12-22 US US10/586,675 patent/US20080283972A1/en not_active Abandoned
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CN1918323A (zh) | 2007-02-21 |
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US20080283972A1 (en) | 2008-11-20 |
JP2007523484A (ja) | 2007-08-16 |
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