CN101740351A - 切割模片接合膜以及半导体器件的生产方法 - Google Patents
切割模片接合膜以及半导体器件的生产方法 Download PDFInfo
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- CN101740351A CN101740351A CN200910224839A CN200910224839A CN101740351A CN 101740351 A CN101740351 A CN 101740351A CN 200910224839 A CN200910224839 A CN 200910224839A CN 200910224839 A CN200910224839 A CN 200910224839A CN 101740351 A CN101740351 A CN 101740351A
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Images
Classifications
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Abstract
本发明涉及切割模片接合膜以及半导体器件的生产方法。本发明涉及切割模片接合膜,其包括:具有设置于基材上的压敏粘合剂层的切割膜,和设置于所述压敏粘合剂层上的模片接合膜。所述切割膜的压敏粘合剂层为由包含丙烯酸类聚合物A和发泡剂的热膨胀性压敏粘合剂形成的热膨胀性压敏粘合剂层。所述丙烯酸类聚合物A是由单体组合物构成的丙烯酸类聚合物,所述单体组合物包括50重量%以上的由CH2=CHCOOR(其中R为具有6至10个碳原子的烷基)表示的丙烯酸酯,和1重量%至30重量%的含羟基单体,且不包括含羧基单体。所述热膨胀性压敏粘合剂层具有30mJ/m2以下的表面自由能。所述模片接合膜由包含环氧树脂的树脂组合物构成。
Description
技术领域
本发明涉及切割模片接合膜(dicing die-bonding film),其用于在切割前通过将用于固定芯片状工件(如半导体芯片)和电极构件的粘结剂设置在工件(如半导体晶片)上来切割工件。
背景技术
形成电路图案的半导体晶片(工件)根据需要通过背面研磨调节其厚度之后,切割成半导体芯片(芯片状工件)(切割步骤)。在切割步骤中,为了除去切断层,通常用适度的液压(通常约2kg/cm2)洗涤半导体晶片。然后,用粘结剂将所述半导体芯片固定于被粘物如引线框上(安装步骤),然后,转移至接合步骤。在传统的安装步骤中,在引线框或半导体芯片上涂布粘结剂。然而,在该方法中,难以使得粘结剂层均匀化,并且粘结剂的涂布需要特殊装置和长时间。为此原因,已提出切割模片接合膜,其在切割步骤中粘结保持半导体晶片,也提供安装步骤中所需要的芯片固定用粘结剂层(例如,参见JP-A-60-57642)。
在JP-A-60-57642中描述的切割模片接合膜中,粘结剂层形成于支撑基材上,使得粘结剂层能从支撑基材剥离。即,制造切割模片接合膜,使得在通过粘结剂层保持的同时切割半导体晶片后,通过拉伸支撑基材使各半导体芯片与粘结剂层一起剥离并分别回收,然后用该粘结层将其固定于被粘物如引线框上。
对于这种切割模片接合膜的粘结剂层,期望以下性能:不发生切割失败和尺寸错误等的对半导体晶片的良好保持力,切割后半导体芯片能与粘结剂层一体化地从支撑基材上剥离的良好剥离性,和剥离后没有粘合剂附着至半导体晶片和粘结剂层的低污染性。然而,很难良好平衡地显示这些特性。特别地,如用旋转圆形刮刀切割半导体晶片的方法中,需要粘结剂层具有大的保持力的情况下,难以得到满足上述特性的切割模片接合膜。
因此,为了克服该问题,已提出各种改良方法(例如,参见JP-A-2-248064)。在JP-A-2-248064中,在支撑基材与粘结剂层之间插入能通过紫外线固化的压敏粘合剂层。在此方法中,切割后通过紫外线固化压敏粘合剂层,使压敏粘合剂层与粘结剂层之间的粘合力下降,然后将两层彼此剥离,从而便于半导体芯片的拾取(picking-up)。
然而,即使通过这种改进的方法,有时也难以制备良好平衡切割时的保持力和随后所需的剥离性的切割模片接合膜。例如,在得到具有10mm×10mm以上尺寸的大型半导体芯片的情况下,因半导体芯片尺寸如此大,不易于通过常规模片接合机(die bonder)拾取半导体芯片。
发明内容
考虑到上述问题,已作出本发明,其目的在于提供切割模片接合膜,其在即使切割薄工件时的保持力,将通过切割得到的半导体芯片和模片接合膜一体化剥离时的剥离性,和剥离后无压敏粘合剂附着至半导体晶片和粘结剂层的低污染性之间的平衡性优良。
为解决上述传统问题,本申请的发明人已研究切割模片接合膜。结果发现,当使用具有包含以下切割膜和由环氧树脂组合物构成的模片接合膜形式的切割模片接合膜时,用于保持薄工件以有效切割该工件的保持力、用于易于一体化剥离通过切割得到的半导体芯片和模片接合膜的剥离性、用于抑制或防止剥离后压敏粘合剂组分附着至半导体晶片和模片接合膜(粘结剂层)的低污染性之间的平衡性优良,所述切割膜的压敏粘合剂层是由热膨胀性压敏粘合剂形成并具有特定表面自由能的热膨胀性压敏粘合剂层,所述热膨胀性压敏粘合剂包含由特定单体组合物构成的丙烯酸类聚合物。由此完成本发明。
即,本发明涉及
切割模片接合膜,其包括:
具有设置于基材上的压敏粘合剂层的切割膜;和
设置于所述压敏粘合剂层上的模片接合膜,
其中所述切割膜的压敏粘合剂层为由包含丙烯酸类聚合物A和发泡剂的热膨胀性压敏粘合剂形成的热膨胀性压敏粘合剂层,所述丙烯酸类聚合物A是由单体组合物构成的丙烯酸类聚合物,所述单体组合物包括50重量%以上的由CH2=CHCOOR(其中R为具有6至10个碳原子的烷基)表示的丙烯酸酯,和1重量%至30重量%的含羟基单体,且不包括含羧基单体,
所述热膨胀性压敏粘合剂层具有30mJ/m2以下的表面自由能,和
其中所述模片接合膜由包含环氧树脂的树脂组合物构成。
如上,本发明的切割模片接合膜中切割膜的压敏粘合剂层是由具有规定组成的丙烯酸类聚合物形成并具有规定程度的表面自由能的热膨胀性压敏粘合剂层。因此,该切割模片接合膜具有热膨胀性,因而由于热膨胀性能够实现降低剥离力,因此剥离性良好并能够获得良好的拾取性。另外,因为压敏粘合剂层具有规定程度的表面自由能,低污染性能得以改进。当然,热膨胀性压敏粘合剂层具有压敏粘合性(保持力),因此能在切割时良好地保持薄工件(半导体晶片)。另外,由于在剥离后模片接合膜已附着至半导体晶片,在下一步骤中,半导体芯片能够使用模片接合膜粘接并固定至规定被粘物,在所述下一步骤后,随后可通过有效进行适当处理等而生产半导体器件。
关于切割膜的热膨胀性压敏粘合剂层,在作为基础聚合物的丙烯酸类聚合物A中,通过使用CH2=CHCOOR(其中R为具有6至10个碳原子的烷基)作为单体组合物中的丙烯酸酯,能防止由于过大剥离力导致的拾取性降低。此外,通过调整含羟基单体的比例为10重量%至30重量%的范围内,能有效防止拾取性和低污染性的降低。
在本发明中,热膨胀性微球能适于用作发泡剂。
在本发明的切割模片接合膜中,优选切割膜的热膨胀性压敏粘合剂层由包括压敏粘合剂和发泡剂的热膨胀性压敏粘合剂形成,该压敏粘合剂能形成具有5×104Pa至1×106Pa的在23℃至150℃温度范围内的弹性模量的压敏粘合剂层;该模片接合膜具有1×105Pa至1×1010Pa的在T0至T0+20℃温度范围内的弹性模量,其中T0表示所述切割膜的热膨胀性压敏粘合剂层的发泡起始温度。通过控制切割膜的热膨胀性压敏粘合剂层的弹性模量(特别地,丙烯酸类聚合物A的弹性模量)至上述范围,热膨胀性变得良好并能防止拾取性降低。此外,通过控制模片接合膜的弹性模量至上述范围,能防止抑制由热膨胀产生的切割膜和模片接合膜之间的接触面积的减少,由此切割膜和模片接合膜之间的接触面积能有效地减少。
此外,本发明提供包含使用上述切割模片接合膜的半导体器件的生产方法。
本发明的切割模片接合膜在即使切割薄工件时的保持力,在将通过切割得到的半导体芯片和模片接合膜一体化剥离时的剥离性、和剥离后无压敏粘合剂组分附着至半导体晶片和粘结剂层的低污染性之间的平衡性优良。此外,剥离后,因为模片接合膜附着在半导体芯片上,在下一步骤中可用模片接合膜将半导体芯片粘贴并固定。
在切割工件时,可以以以下状态使用本发明的切割模片接合膜:将用于使芯片状工件如半导体芯片固定在电极构件上的粘结剂,在切割前预先设置在工件如半导体晶片上。通过使用本发明的切割模片接合膜,可以容易地生产其中将半导体芯片固定于电极构件上的半导体器件。
附图说明
图1为显示根据本发明一个实施方案的切割模片接合膜的横截面示意图。
图2为显示根据本发明另一个实施方案的切割模片接合膜的横截面示意图。
图3A-3E为显示其中半导体芯片通过模片接合膜安装在切割模片接合膜上的实例的横截面示意图。
附图标记说明
10,11 切割模片接合膜
1a 基材
1b 热膨胀性压敏粘合剂层
2 切割膜
3,31 模片接合膜
4 半导体晶片
5 半导体芯片
6 被粘物
7 接合导线
8 密封树脂
9 垫片
具体实施方式
参考图1和2描述本发明的实施方案,但本发明不限于这些实施方案。图1为显示本发明切割模片接合膜一个实施方案的横截面示意图。图2为显示本发明切割模片接合膜另一个实施方案的横截面示意图。然而,没有给出对于描述不必要的部分,为了使描述容易,存在通过放大、缩小等显示的部分。
如图1所示,本发明的切割模片接合膜为具有如下构成的切割模片接合膜10:包含具有在基材1a上设置的热膨胀性压敏粘合剂层1b的切割膜2,和在热膨胀性压敏粘合剂层1b上设置的模片接合膜3。此外,本发明的切割模片接合膜可以是具有如下构成的切割模片接合膜11:不是在热膨胀性压敏粘合剂层1b的全部表面上,而是仅在半导体晶片附着部分上形成模片接合膜31,如图2所示。
此处,该热膨胀性压敏粘合剂层1b由包含下述丙烯酸类聚合物A和发泡剂的热膨胀性压敏粘合剂形成,并具有表面自由能为30mJ/m2以下的特性。
丙烯酸类聚合物A:由单体组合物构成的丙烯酸类聚合物,该单体组合物包括:50重量%以上的由CH2=CHCOOR(其中R为具有6至10个碳原子的烷基)表示的丙烯酸酯,和1重量%至30重量%的含羟基单体,且不包括含羧基单体。
(切割膜)
(基材)
基材为切割模片接合膜的强度基质(strength matrix)。基材实例包括聚烯烃如低密度聚乙烯、直链聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚物聚丙烯、嵌段共聚物聚丙烯、均聚丙烯、聚丁烯和聚甲基戊烯;乙烯-乙酸乙烯酯共聚物;离聚物树脂;乙烯-(甲基)丙烯酸共聚物;乙烯-(甲基)丙烯酸酯(无规或交替)共聚物;乙烯-丁烯共聚物;乙烯-己烯共聚物;丙烯酸类树脂;聚氨酯;聚酯如聚对苯二甲酸乙二醇酯和聚萘二甲酸乙二醇酯;聚碳酸酯;聚酰亚胺;聚醚醚酮;聚醚酰亚胺;聚酰胺;全芳族聚酰胺(whole aromatic polyamide);聚苯硫醚;芳族聚酰胺(纸);玻璃;玻璃布;氟化树脂;聚氯乙烯;聚偏二氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);纤维素树脂;硅酮树脂;金属(箔);和纸。
另外,作为基材的材料,还可使用聚合物如上述各树脂的交联体。
源自各所述树脂的塑料膜可未拉伸地使用,或可根据需要实施单轴或双轴拉伸处理后使用。根据通过拉伸处理等而被赋予热收缩性的树脂片,切割后通过基材的热收缩降低热膨胀性压敏粘合剂层与模片接合膜之间的粘合面积,从而可有效地促进半导体芯片的拾取。
作为基材,可使用由透明树脂形成的片、具有网状结构的片、在其上开孔的片等。
可在基材表面上实施常规使用的表面处理如化学或物理处理,例如铬酸盐处理、臭氧暴露、火焰暴露、暴露于高压电击和电离照射处理,以及使用底漆剂(undercoating agent)(例如,稍后描述的粘性物质(tacky substance))的涂布处理,以改进与邻接层的粘合性、保持性等。
可适当地选择和使用相同种类或不同种类的树脂以形成基材,根据需要,可使用将多种树脂共混的共混树脂。此外,可在基材上设置由金属、合金及其氧化物等构成并具有厚度约30至500埃的导电性物质的气相沉积层,以赋予基材抗静电功能。基材可具有单层或者由两种或多种构成的多层的形式。
基材的厚度可适当地确定,没有特别限制,然而,其通常为约5至200μm。
此外,在不损害本发明的优点等的范围内,基材可包含各种添加剂(着色剂、填料、增塑剂、防老剂、抗氧化剂、表面活性剂、阻燃剂等)。
(热膨胀性压敏粘合剂层)
该热膨胀性压敏粘合剂层具有压敏粘合性以及热膨胀性,可由热膨胀性压敏粘合剂(组合物)形成。关于此点,通过对热膨胀性压敏粘合剂层实施规定热处理,产生热膨胀性压敏粘合剂层的形状改变,热膨胀性压敏粘合剂层和模片接合膜之间的压敏粘合力显著降低,压敏粘合力能降低到几乎为零,由此能赋予优良的拾取性。
作为用于形成热膨胀性压敏粘合剂层的热膨胀性压敏粘合剂,能够使用包含压敏粘合剂和发泡剂的热膨胀性压敏粘合剂。在本发明中,重要的是使用包含以下丙烯酸类聚合物A的压敏粘合剂作为压敏粘合剂。因此,热膨胀性压敏粘合剂是包含以下丙烯酸类聚合物A和发泡剂的热膨胀性压敏粘合剂。
丙烯酸类聚合物A:由单体组合物构成的丙烯酸类聚合物,该单体组合物包括:50重量%以上的由CH2=CHCOOR(其中R为具有6至10个碳原子的烷基)表示的丙烯酸酯,和1重量%至30重量%的含羟基单体,且不包括含羧基单体。
作为压敏粘合剂(或热膨胀性压敏粘合剂),重要的是使用包含丙烯酸类聚合物A作为基础聚合物或聚合物主要组分的压敏粘合剂(或热膨胀性压敏粘合剂)。在丙烯酸类聚合物A中,由化学式CH2=CHCOOR表示的丙烯酸烷基酯(其中R为具有6至10个碳原子的烷基)(有时称为“丙烯酸C6-10烷基酯”)用作主要单体组分。在丙烯酸烷基酯中,当具有包含少于6个碳原子的烷基的丙烯酸烷基酯用作主要单体组分时,剥离力变得过大,存在拾取性降低的情况。另一方面,当具有包含多于10个碳原子的烷基的丙烯酸烷基酯用作主要单体组分时,与模片接合膜的粘合性降低,结果,在切割时产生碎屑飞散(chip fly)的情况。
具体地,丙烯酸C6-10烷基酯的实例包括:丙烯酸己酯,丙烯酸庚酯,丙烯酸辛酯,丙烯酸异辛酯,丙烯酸2-乙基己酯,丙烯酸壬酯,丙烯酸异壬酯,丙烯酸癸酯和丙烯酸异癸酯。作为丙烯酸C6-10烷基酯,特别优选具有包含8至9个碳原子的烷基的丙烯酸烷基酯。其中,丙烯酸2-乙基己酯和丙烯酸异辛酯是最适合的。丙烯酸C6-10烷基酯可单独使用或两种以上组合使用。
此外,在本发明中,丙烯酸C 6-10烷基酯的含量重要地为50重量%(wt%)以上,优选70-99wt%,基于单体组分的总量。当丙烯酸C6-10烷基酯的含量低于50wt%时,剥离力变得过大,存在拾取性下降的情况。
作为所述丙烯酸类聚合物A,可使用除了丙烯酸C6-10烷基酯以外的丙烯酸酯作为单体组分。该丙烯酸酯的实例包括:除丙烯酸C6-10烷基酯以外的丙烯酸烷基酯,具有芳香环的丙烯酸酯(丙烯酸芳基酯如丙烯酸苯酯等),具有脂环烃基的丙烯酸酯(丙烯酸环烷基酯如丙烯酸环戊酯和丙烯酸环己酯、丙烯酸异冰片酯等)。丙烯酸烷基酯和丙烯酸环烷基酯是适合的,特别地,适合使用丙烯酸烷基酯。这些丙烯酸酯可单独使用或可两种以上组合使用。
丙烯酸烷基酯的实例包括:具有包含5个以下碳原子的烷基的丙烯酸烷基酯如丙烯酸甲酯,丙烯酸乙酯,丙烯酸丙酯,丙烯酸异丙酯,丙烯酸丁酯,丙烯酸异丁酯,丙烯酸仲丁酯,丙烯酸叔丁酯,丙烯酸戊酯,丙烯酸异戊酯;具有包含11个以上(优选11至30个)碳原子的烷基的丙烯酸烷基酯如丙烯酸十一烷基酯,丙烯酸十二烷基酯,丙烯酸十三烷基酯,丙烯酸十四烷基酯,丙烯酸十六烷基酯,丙烯酸十八烷基酯,和丙烯酸二十烷基酯。
丙烯酸烷基酯如丙烯酸C6-10烷基酯可以是任何形式的丙烯酸烷基酯如丙烯酸直链烷基酯或丙烯酸支链烷基酯。
在本发明中,丙烯酸类聚合物A包含与丙烯酸C6-10烷基酯可共聚的含羟基单体。含羟基单体的实例包括:(甲基)丙烯酸2-羟乙酯,(甲基)丙烯酸2-羟丙酯,(甲基)丙烯酸4-羟丁酯,(甲基)丙烯酸6-羟己酯,(甲基)丙烯酸8-羟辛酯,(甲基)丙烯酸10-羟癸酯,(甲基)丙烯酸12-羟基月桂酯和(甲基)丙烯酸(4-羟甲基环己基)甲酯。含羟基单体可单独使用或两种以上组合使用。
含羟基单体的含量重要地在1wt%-30wt%的范围内,优选在3wt%-10wt%的范围内,基于单体组分的总量。当含羟基单体的含量基于单体组分的总量低于1wt%时,压敏粘合剂的粘合力降低且拾取性降低。另一方面,当含羟基单体的含量基于单体组分的总量超过30wt%时,压敏粘合剂的极性变高,其与模片接合膜的相互作用变高,因此拾取性降低。
为了改进粘合力、耐热性等的目的,根据需要,丙烯酸类聚合物A可包含相应于与丙烯酸C6-10烷基酯和含羟基单体可共聚的其他单体组分的单元(有时称为“与其它单体组分可共聚的”)。然而,本发明中,重要的是不采用含羧基单体。当采用含羧基单体时,热膨胀性压敏粘合剂层和模片接合膜之间的粘合性通过羧基和模片接合膜中环氧树脂中的环氧基反应变高,且二者的剥离性可能降低。作为该含羧基单体,可以提及丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸和巴豆酸等。
可共聚的其他单体组分的实例包括:甲基丙烯酸酯如甲基丙烯酸甲酯,甲基丙烯酸乙酯,甲基丙烯酸丙酯,甲基丙烯酸异丙脂,甲基丙烯酸丁酯,甲基丙烯酸异丁酯,甲基丙烯酸仲丁酯和甲基丙烯酸叔丁酯;酸酐单体如马来酸酐和衣康酸酐;含磺酸基单体如苯乙烯磺酸,烯丙基磺酸,2-(甲基)丙烯酰胺基-2-甲基丙烷磺酸,(甲基)丙烯酰胺基丙烷磺酸,(甲基)丙烯酸磺丙酯和(甲基)丙烯酰氧基萘磺酸;含磷酸基单体如2-羟乙基丙烯酰基磷酸酯;苯乙烯类单体如苯乙烯,乙烯基甲苯和α-甲基苯乙稀;烯烃或二烯烃如乙烯,丁二烯,异戊二烯和异丁烯;含卤原子的单体如氯乙烯;含氟原子的单体如氟化(甲基)丙烯酸酯;丙烯酰胺;和丙烯腈。
可以使用这些可以共聚的其他单体组分的一种或两种以上。这些可以共聚的单体的用量优选为单体组分总量的40wt%以下。
丙烯酸类聚合物A可通过聚合单一的单体或两种以上的单体混合物得到。聚合可通过任何方法如溶液聚合(如,自由基聚合,阴离子聚合,阳离子聚合等),乳液聚合,本体聚合,悬浮液聚合和光聚合(如紫外线(UV)聚合等)进行。从防止污染洁净被粘物的观点,低分子量物质的含量优选小。从该观点,丙烯酸类聚合物A的重均分子量优选350,000-1,000,000,更优选约450,000-800,000。
此外,在压敏粘合剂(或热膨胀性压敏粘合剂)中,为了控制压敏粘合力,可任选地使用外部交联剂。作为外部交联方法的具体方式,可以提及以下方法:添加所谓的交联剂如多异氰酸酯化合物、环氧化合物、氮丙啶化合物或三聚氰胺类交联剂并使之反应的方法。在采用外部交联剂的情况下,其量根据要交联的基础聚合物的余量(balance)和进一步作为压敏粘合剂的使用用途适当地决定。要使用的外部交联剂的用量为20重量份以下,优选0.1重量份-10重量份,基于100重量份基础聚合物。此外,压敏粘合剂(或热膨胀性压敏粘合剂)可与常规已知的各种添加剂如增粘剂和防老剂混合。
此外,作为丙烯酸类聚合物A,可以使用其中除以上示例的含羟基单体以外,共聚含羟基醚类化合物(醚类含羟基单体)如2-羟乙基乙烯基醚、4-羟丁基乙烯基醚或二甘醇单乙烯基醚等的聚合物等。
在本发明中,重要的是热膨胀性压敏粘合剂层包含用于赋予热膨胀性的发泡剂。因此,通过加热至少部分切割模片接合膜,在任何时候,在被粘物(特别地多片被粘物)粘着至切割模片接合膜的压敏粘合剂表面从而使在热膨胀性压敏粘合剂层加热部分中包含的发泡剂发泡和/或膨胀的状态下,热膨胀性压敏粘合剂层至少部分膨胀,并由于该热膨胀性压敏粘合剂层的至少部分膨胀,相应于膨胀部分的热膨胀性压敏粘合剂层的压敏粘合剂表面不均一变形,从而减少压敏粘合剂表面和粘着被粘物的模片接合膜之间的面积。因此,不均一变形的压敏粘合剂表面和粘着被粘物的模片接合膜之间的粘合力降低,由此粘贴至压敏粘合剂表面的模片接合膜(具有粘着至其的被粘物的模片接合膜)能从切割膜剥离。在热膨胀性压敏粘合剂层部分加热的情况下,部分加热的部分可以为至少包括通过模片接合膜粘贴要剥离或拾取的半导体芯片至其的部分的部分。
用于热膨胀性压敏粘合剂层的发泡剂没有特别限制,可从已知的发泡剂中适当选择。发泡剂可单独使用或以两种以上组合使用。作为发泡剂,可适当采用热膨胀性微球。
热膨胀性微球没有特别限制,可从已知的热膨胀性微球中是(各种无机热膨胀性微球、有机热膨胀性微球等)适当地选择。作为热膨胀性微球,从易于混合操作等的观点,可以适当地采用微囊化发泡剂。该热膨胀性微球的实例包括其中在具有弹性的壳中包含易于气化和膨胀的物质如异丁烷、丙烷或戊烷的微球。上述壳通常由热熔融性物质或通过热膨胀破坏的物质形成。形成壳的物质实例包括:偏二氯乙烯-丙烯腈共聚物,聚乙烯醇,聚乙烯醇缩丁醛,聚甲基丙烯酸甲酯,聚丙烯腈,聚偏二氯乙烯和聚砜。
热膨胀性微球可通过常用方法如凝聚方法、界面聚合方法等生产。关于这一点,作为热膨胀性微球,可以使用商购可得到的产品如由Matsumoto Yushi-Seiyaku Co.,Ltd.制造的商品名“Matsumoto Microsphere″系列如商品名″MatsumotoMicrosphere F30″、商品名″Matsumoto Microsphere F301D″、商品名″Matsumoto Microsphere F50D″、商品名″MatsumotoMicrosphere F501D″、商品名″Matsumoto Microsphere F80SD″和商品名″Matsumoto Microsphere F80VSD″,及由ExpancelCompany制造的商品名″051DU″、商品名″053DU″、商品名″551DU″,″551-20DU″和商品名″551-80DU″。
在本发明中,作为发泡剂,也可使用除了热膨胀性微球以外的发泡剂。作为该发泡剂,发泡剂可从各种发泡剂如各种无机和有机发泡剂中适当选择并使用。代表性无机发泡剂的实例包括碳酸铵、碳酸氢铵、亚硝酸铵、硼氢化钠(sodiumborohydxide)和各种叠氮化物。
另外,典型有机发泡剂的实例包括水;氯氟烷类化合物,如三氯单氟甲烷和二氯单氟甲烷;偶氮类化合物,如偶氮二异丁腈、偶氮二碳酰胺和偶氮二羧酸钡;肼类化合物,如对甲苯磺酰肼、联苯砜-3,3’-二磺酰肼、4,4’-氧代双(苯磺酰肼)和烯丙基双(磺酰肼);氨基脲类化合物,如对甲苯磺酰氨基脲和4,4’-氧代双(苯磺酰氨基脲);三唑类化合物,如5-吗啉基-1,2,3,4-噻三唑;N-亚硝基类化合物,如N,N’-二亚硝基五亚甲基四胺(N,N’-dinitrosopentamethylenetetoramine)和N,N’-二甲基-N,N’-二亚硝基对苯二甲酰胺。
在本发明中,由于热膨胀性压敏粘合剂层的粘合力通过热处理有效并稳定地下降,优选具有适当强度的发泡剂,直至体积膨胀比达到5倍以上,7倍以上,特别地10倍以上时,所述发泡剂也不会胀破。
发泡剂(热膨胀性微球等)的混合量可根据热膨胀性压敏粘合剂层的膨胀倍率和粘合力下降度适当地设定,但通常该量基于100重量份形成热膨胀性压敏粘合剂层的基础聚合物,为例如1重量份至150重量份,优选10重量份至130重量份,和进一步优选25重量份至100重量份。
在使用热膨胀性微球作为发泡剂的情况下,热膨胀性微球的粒径(平均粒径)可根据热膨胀性压敏粘合剂层的厚度等适当地选择。热膨胀性微球的平均粒径可以例如在100μm以下,优选80μm以下,更优选1μm至50μm,特别地1μm至30μm的范围内选择。热膨胀性微球的粒径可在形成热膨胀性微球的过程中控制,或可在形成后通过分级等方式控制。热膨胀性微球优选具有均匀的粒径。
在本发明中,作为发泡剂,适合使用具有80℃至210℃,优选95℃至200℃,特别优选100℃至170℃范围的发泡起始温度(热膨胀起始温度,T0)的发泡剂。当发泡剂的发泡起始温度低于80℃时,在切割模片接合膜生产期间或其使用期间在一些情况下发泡剂可能受热发泡,从而操作性和生产性下降。另一方面,当发泡剂的发泡起始温度超过210℃时,要求切割膜和模片接合膜的基材具有过高的耐热性,因此考虑到操作性、生产性和成本,该情况不是优选的。此外,发泡剂的发泡起始温度(T0)对应于热膨胀性压敏粘合剂层的发泡起始温度(T0)。
作为使发泡剂发泡的方法(即,使热膨胀性压敏粘合剂层热膨胀的方法),可从已知加热和发泡方法中适当地选择并采取任意方法。
在本发明中,基于热处理前适当的粘合力与热处理后粘合力下降度之间平衡的观点,热膨胀性压敏粘合剂层优选具有在23℃至150℃温度范围内的5×104Pa至1×106Pa,更优选5×104Pa至8×105Pa,特别优选5×104Pa至5×105Pa的以不含发泡剂形式的弹性模量。当不含发泡剂形式的热膨胀性压敏粘合剂层的弹性模量(温度:23℃至150℃)小于5×104Pa时,在一些情况下热膨胀性变差和拾取性下降。此外,当不含发泡剂形式的热膨胀性压敏粘合剂层的弹性模量(温度:23℃至150℃)大于1×106Pa时,在一些情况下初始粘合性变差。
不含发泡剂形式的热膨胀性压敏粘合剂层对应于由压敏粘合剂(不含发泡剂)形成的压敏粘合剂层。因此,不含发泡剂形式的热膨胀性压敏粘合剂层的弹性模量可使用压敏粘合剂(不含发泡剂)测量。就此而言,热膨胀性压敏粘合剂层可由包含以下压敏粘合剂的热膨胀性压敏粘合剂和发泡剂形成,所述压敏粘合剂能够形成在23℃至150℃温度范围内其弹性模量为5×104Pa至1×106Pa的压敏粘合剂层。
不含发泡剂形式的热膨胀性压敏粘合剂层的弹性模量如下测定。生产未添加发泡剂形式的热膨胀性压敏粘合剂层(即,由不含发泡剂的压敏粘合剂形成的压敏粘合剂层)(样品)。然后,使用Rheometrics Co.Ltd.生产的动态粘弹性测量设备“ARES”,在频率1Hz、升温速率5℃/min和应变0.1%(23℃)或0.3%(150℃)的条件下,以剪切模式测量样品的弹性模量,并将其作为在23℃或150℃下获得的剪切贮能弹性模量(shear storage elasticmodulus)G’的值。
热膨胀性压敏粘合剂层的弹性模量可通过调节压敏粘合剂基础聚合物的种类、交联剂、添加剂等来控制。
另外,在本发明中,热膨胀性压敏粘合剂层在形成模片接合膜一侧的表面上,特别是在与模片接合膜接触位置的表面上,优选具有30mJ/m2以下(例如,1mJ/m2至30mJ/m2)的表面自由能。热膨胀性压敏粘合剂层的表面自由能进一步优选15mJ/m2至30mJ/m2,特别优选20mJ/m2至28mJ/m2。在热膨胀性压敏粘合剂层的表面自由能超过30mJ/m2的情况下,在一些情况下热膨胀性压敏粘合剂层与模片接合膜之间粘合性增强,拾取性可能下降。就此而言,热膨胀性压敏粘合剂层的表面自由能(mJ/m2)为热膨胀前的热膨胀性压敏粘合剂层的表面自由能。
在本发明中,热膨胀性压敏粘合剂层的表面自由能意指通过以下方式确定的表面自由能值(γs):分别测量水和二碘甲烷对热膨胀性压敏粘合剂层表面的接触角θ(rad),并求解作为联立线性方程的两个方程,所述方程利用测量值和从文献已知的值作为接触角测量液体表面自由能值{水(色散分量(γL d):21.8(mJ/m2),极性分量(γL p):51.0(mJ/m2)),二碘甲烷(色散分量(γL d):49.5(mJ/m2),极性分量(γL p):1.3(mJ/m2))}以及以下方程(1a)至(1c)获得。
γs=γs d+γs p (1a)
γL=γL d+γL p (1b)
(1+cosθ)γL=2(γs dγL d)1/2+2(γs PγL p)1/2(1c)
其中,方程(1a)至(1c)中的各符号分别如下。
θ:用水或二碘甲烷液滴测量的接触角(rad)
γs:压敏层(热膨胀性压敏粘合剂层)的表面自由能(mJ/m2)
γs d:压敏层(热膨胀性压敏粘合剂层)表面自由能中的色散分量(mJ/m2)
γs p:压敏层(热膨胀性压敏粘合剂层)表面自由能中的极性分量(mJ/m2)
γL:水或二碘甲烷的表面自由能(mJ/m2)
γL d:水或二碘甲烷表面自由能中的色散分量(mJ/m2)
γL p:水或二碘甲烷表面自由能中的极性分量(mJ/m2)
另外,水或二碘甲烷对热膨胀性压敏粘合剂层的接触角通过如下方法测定:在JIS Z 8703所述的测试场所环境(温度:23±2℃,湿度:50±5%RH)下,将约1μL水(蒸馏水)或二碘甲烷液滴滴加至热膨胀性压敏粘合剂层表面上,并使用表面接触角计“CA-X”(由FACE Company制造)在滴加30秒后通过三点法测量角度。
热膨胀性压敏粘合剂层的表面自由能可通过调节压敏粘合剂基础聚合物的种类和添加剂等控制。
热膨胀性压敏粘合剂层可通过例如以下形成:将压敏粘合剂、发泡剂(热膨胀性微球等)和任选的溶剂以及其它添加剂混合,并利用常规使用的方法将该混合物成型为片状层。具体地,热膨胀性压敏粘合剂层可例如通过如下方法形成:包括将含有压敏粘合剂、发泡剂(热膨胀性微球等)和任选的溶剂以及其它添加剂的混合物施涂在基材或下述橡胶状有机弹性中间层上的方法;包括将上述混合物施涂在适当的隔离体如隔离纸上,以形成热膨胀性压敏粘合剂层,并将其转移(transfer)(转换)至基材或橡胶状有机弹性中间层上的方法,或类似方法。
热膨胀性压敏粘合剂层的厚度没有特别限制,可根据粘合力的下降度适当地选择。例如,厚度为约5μm至300μm,优选20μm至150μm。然而,在使用热膨胀性微球作为发泡剂的情况下,重要的是热膨胀性压敏粘合剂层的厚度大于其中包含的热膨胀性微球最大粒径。当热膨胀性压敏粘合剂层的厚度过小时,由于热膨胀性微球的不均匀性导致表面平滑性受到损害,从而加热前(未发泡状态)的粘合性下降。另外,通过热处理的热膨胀性压敏粘合剂层的变形度较小,从而难以平稳地降低粘合力。另一方面,当热膨胀性压敏粘合剂层的厚度过大时,在通过热处理膨胀或发泡后的热膨胀性压敏粘合剂层中,内聚破坏趋于发生,在一些情况下在被粘物上可能产生粘合剂残余物。
热膨胀性压敏粘合剂层可为单层或多层。
在本发明中,在不损害本发明优点等的范围内,热膨胀性压敏粘合剂层可包含各种添加剂(例如,着色剂、增稠剂、增量剂、填料、增粘剂、增塑剂、防老剂、抗氧化剂、表面活性剂、交联剂等)。
本发明中,热膨胀性压敏粘合剂层可通过加热进行热膨胀。热处理可利用适当的加热方式如热盘、热风干燥器、近红外灯或空气干燥器进行。热处理时的加热温度可为热膨胀性压敏粘合剂层中发泡剂(热膨胀性微球等)的发泡起始温度(热膨胀起始温度)以上。热处理的条件可根据通过发泡剂(热膨胀性微球等)的种类等导致的粘合面积减少性(decreasing profile),基材、模片接合膜等的耐热性和加热方法(热容量、加热方式等)等适当地设定。热处理的常用条件如下:温度100℃至250℃下进行1至90秒(热盘等),或5至15分钟(热风干燥器等)。热处理可以根据使用的预期目的在合适阶段进行。此外,存在可使用红外灯或热水作为热处理时的热源的情况。
(中间层)
本发明中,可在基材与热膨胀性压敏粘合剂层之间设置中间层。作为该中间层,可提及基于改进粘合力目的的底漆剂的涂层。另外,除了底漆剂涂层之外的中间层的实例包括为了赋予良好变形性的层、为了增大与被粘物(半导体晶片等)的粘附面积目的的层、为了改进粘合力目的的层、为了获得对被粘物(半导体晶片等)表面形状的良好追随性目的的层、为了改进用于通过加热降低粘合力的处理性目的的层和为了改进加热后从被粘物(半导体晶片等)的剥离性目的的层。
特别地,从赋予具有热膨胀性压敏粘合剂层的切割膜以变形性和改进其加热后的剥离性的观点,优选在基材与热膨胀性压敏粘合剂层之间设置橡胶状有机弹性中间层。如上所述,通过设置橡胶状有机弹性中间层,在将切割模片接合膜粘附在被粘物上时,切割模片接合膜的表面能够良好地追随被粘物的表面形状,从而可扩大粘合面积。另外,在加热并从切割膜上剥离具有被粘物的模片接合膜时,能够高度(精确)控制热膨胀性压敏粘合剂层的热膨胀,由此热膨胀性压敏粘合剂层能够沿厚度方向优先并均匀地膨胀。即,所述橡胶状有机弹性中间层可发挥以下作用:当将切割模片接合膜粘附在被粘物上时,通过使表面追随被粘物表面形状来提供大的粘附面积的作用;和为了从切割膜上剥离具有被粘物的模片接合膜的目的,当通过加热使热膨胀性压敏粘合剂层发泡和/或膨胀时,通过降低沿切割膜平面方向的发泡和/或膨胀限制,便于通过热膨胀性压敏粘合剂层的三维结构变化形成波纹结构的作用。
此外,橡胶状有机弹性中间层为如上所述根据需要设置的层,其可不必需设置。为了增强加工期间被粘物的固定性和加热后的其剥离性,优选设置橡胶状有机弹性中间层。
橡胶状有机弹性中间层优选以覆盖热膨胀性压敏粘合剂层的形式设置于基材侧热膨胀性压敏粘合剂层表面上。就此而言,中间层还可作为除了基材与热膨胀性压敏粘合剂层之间的中间层之外的层来设置。
橡胶状有机弹性中间层可介于基材的一面或两面上。
所述橡胶状有机弹性中间层优选由具有橡胶弹性例如具有50以下,特别是40以下的根据ASTM D-2240的D型肖氏(Shore)硬度的天然橡胶、合成橡胶或合成树脂形成。就此而言,即使当聚合物为基本上硬的聚合物如聚氯乙烯时,也可与共混剂如增塑剂或软化剂组合来显示橡胶弹性。该组合物也可用作橡胶状有机弹性中间层的组成材料。
橡胶状有机弹性中间层可通过形成方法形成,所述形成方法例如包括施涂包含橡胶状有机弹性层形成材料如具有橡胶弹性的天然橡胶、合成橡胶或合成树脂的涂布液的方法(涂布法);包括在基材上粘附由橡胶状有机弹性层形成材料组成的膜或层压膜的方法(干法层压法),在所述层压膜中预先在一层或多层热膨胀性压敏粘合剂层上形成由橡胶状有机弹性中间层组成材料形成的层;或包括将包含基材的组成材料的树脂组合物与含有橡胶状有机弹性层形成材料的树脂组合物共挤出的方法(共挤出法)。
此外,橡胶状有机弹性中间层可由包含具有橡胶弹性的天然橡胶、合成橡胶或合成树脂作为主要组分的压敏粘合性物质形成,并可由主要包含该组分的发泡膜形成。发泡可通过例如以下的常规使用的方法实现:通过机械搅拌的方法、利用反应形成的气体的方法、使用发泡剂的方法、除去可溶性物质的方法、通过喷雾的方法、形成复合泡沫的方法或烧结法等。
中间层如橡胶状有机弹性中间层的厚度为例如约5μm至300μm,优选约20μm至150μm。在中间层为例如橡胶状有机弹性中间层的情况下,当橡胶状有机弹性中间层厚度过小时,不能获得加热发泡后的三维结构变化,从而在一些情况下剥离性变差。
中间层如橡胶状有机弹性中间层可以是单层,或可由两层或多层构成。另外,作为中间层如橡胶状有机弹性中间层,优选使用不抑制活性能量射线透射的层。
此外,在不损害本发明优点等的范围内,中间层可包含各种添加剂(如着色剂、增稠剂、增量剂、填料、增粘剂、增塑剂、防老剂、抗氧化剂、表面活性剂、交联剂等)。
(模片接合膜)
重要的是模片接合膜具有以下功能:在加工压接于模片接合膜上的半导体晶片(例如,将其切割成芯片形式)期间,粘附和支撑半导体晶片的功能,和当安装半导体晶片加工体时,起到半导体晶片(例如,切割成芯片形式的半导体晶片)加工体与各种载体(carrier)的接合层作用的功能。特别地,作为模片接合膜,重要的是在半导体晶片加工(例如,加工如切割)期间具有切割片不飞散的粘合性。
本发明中,模片接合膜由包含环氧树脂的树脂组合物构成。在树脂组合物中,环氧树脂的比例可在基于聚合物组分总量的5重量%以上,优选7重量%以上,更优选9重量%以上的范围内适当地选择。环氧树脂比例的上限没有特别限制,可以是100重量%以下,但优选50重量%以下,更优选40重量%以下,基于聚合物组分的总量。
从较少包含腐蚀半导体元件的离子杂质等的观点,环氧树脂是优选的。环氧树脂没有特别限制,只要其通常用作粘结剂组合物即可。例如,可使用双官能环氧树脂或多官能环氧树脂如双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、酚醛清漆型环氧树脂、邻甲酚酚醛清漆型环氧树脂、三羟基苯基甲烷型环氧树脂和四羟苯基乙烷型环氧树脂,或环氧树脂如乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型环氧树脂或缩水甘油基胺型环氧树脂。环氧树脂可单独使用,或两种或多种组合使用。
作为环氧树脂,在上述示例的那些中,特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型环氧树脂和四羟苯基乙烷型环氧树脂。这是因为这些环氧树脂与作为固化剂的酚醛树脂具有高反应性,且耐热性等优异。
另外,根据需要,在模片接合膜中,可组合使用其它热固性树脂或热塑性树脂。热固性树脂的实例包括酚醛树脂、氨基树脂、不饱和聚酯树脂、聚氨酯树脂、硅酮树脂和热固性聚酰亚胺树脂。这些热固性树脂可单独使用,或可两种或多种组合使用。此外,优选酚醛树脂作为环氧树脂的固化剂。
此外,酚醛树脂起到环氧树脂的固化剂的作用,其实例包括酚醛清漆型酚醛树脂如苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂和壬基酚酚醛清漆树脂;甲阶型酚醛树脂;和聚氧苯乙烯如聚对氧苯乙烯。它们可单独使用,或可两种或多种组合使用。在这些酚醛树脂中,特别优选苯酚酚醛清漆树脂和苯酚芳烷基树脂。这是因为可改进半导体器件的连接可靠性。
环氧树脂与酚醛树脂的混合比优选使得例如酚醛树脂中的羟基为0.5至2.0当量,基于环氧树脂组分中的每当量环氧基团。更优选0.8至1.2当量。即,当混合比变为在该范围之外时,固化反应不能充分进行,环氧树脂固化产品的特性趋于劣化。
热塑性树脂的实例包括天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、聚酰胺树脂如6-尼龙和6,6-尼龙、苯氧基树脂、丙烯酸类树脂、饱和聚酯树脂如PET和PBT、聚酰胺酰亚胺树脂和氟树脂。这些热塑性树脂可单独使用,或两种或多种组合使用。在这些热塑性树脂中,离子杂质较少、耐热性高和能够确保半导体元件可靠性的丙烯酸类树脂是特别优选的。
对丙烯酸类树脂没有特别限制,其实例包括含有具有30个以下碳原子,特别是4至18个碳原子的直链或支化烷基的丙烯酸或甲基丙烯酸的一种或两种以上酯作为组分的聚合物。所述烷基的实例括甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基和十八烷基。
另外,作为用于形成丙烯酸类树脂的其他单体(除了具有30个以下碳原子的丙烯酸或甲基丙烯酸的酯以外的单体)没有特别限制,其实例包括含羧基的单体如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸;酸酐单体如马来酸酐和衣康酸酐;含羟基单体如(甲基)丙烯酸-2-羟乙酯、(甲基)丙烯酸-2-羟丙酯、(甲基)丙烯酸-4-羟丁酯、(甲基)丙烯酸-6-羟己酯、(甲基)丙烯酸-8-羟辛酯、(甲基)丙烯酸-10-羟癸酯、(甲基)丙烯酸-12-羟基月桂酯和(4-羟甲基环己基)-甲基丙烯酸酯;含磺酸的单体如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙烷磺酸、(甲基)丙烯酰胺基丙烷磺酸、(甲基)丙烯酸磺丙酯和(甲基)丙烯酰氧基萘磺酸;和含磷酸单体如2-羟乙基丙烯酰基磷酸酯等。
本发明中,热塑性树脂(特别是丙烯酸类树脂)能够以基于聚合物组分的总量低于90重量%,例如1重量%至90重量%的比例使用。热塑性树脂如丙烯酸类树脂的比例优选为20重量%至85重量%,更优选40重量%至80重量%,基于聚合物组分总量。
因为模片接合膜的粘结剂层(由包含环氧树脂的树脂组合物组成的粘合剂层)预先交联至一定程度,优选添加与聚合物分子链末端的官能团反应的多官能化合物作为在生产粘结层时的交联剂。因此,改进高温下的粘合特性,并尝试改进耐热性。
这里,根据需要可将其它添加剂适当地共混入模片接合膜的粘结剂层(由包含环氧树脂的树脂组合物组成的粘结剂层)中。该添加剂的实例包括阻燃剂、硅烷偶联剂和离子捕集剂以及着色剂、增量剂、填料、防老剂、抗氧化剂、表面活性剂、交联剂等。阻燃剂的实例包括三氧化锑、五氧化锑和溴化环氧树脂。阻燃剂可单独使用,或可两种或多种组合使用。硅烷偶联剂的实例包括β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷和γ-环氧丙氧基丙基甲基二乙氧基硅烷。硅烷偶联剂可单独使用,或可两种或多种组合使用。离子捕集剂的实例包括水滑石和氢氧化铋。离子捕集剂可单独使用,或可两种或多种组合使用。
模片接合膜可由包含环氧树脂的树脂组合物形成,并可具有例如仅由含环氧树脂的树脂组合物形成的粘结剂层(模片粘结剂层)的单层组成的结构。此外,除环氧树脂之外,其可具有通过适当地组合具有不同玻璃化转变温度的热塑性树脂和具有不同热固化温度的热固性树脂的两层以上的多层结构。
此外,因为在半导体晶片的切割步骤中使用切割水(cuttingwater),存在模片接合膜吸收水分和水分含量变为常规状态以上的情况。当具有高水分含量的模片接合膜粘贴于基板等上时,存在水蒸气在固化后的步骤中累积在粘附界面上并由此产生漂移的情况。因此,通过使模片接合膜具有采用模片粘合用粘结剂层包夹具有高透湿性的芯材料的结构,在固化后的步骤中水蒸气通过所述膜扩散,由此可避免该问题。基于该观点,模片接合膜可具有在芯材料的一面或两面上形成粘结剂层的多层结构。
所述芯材料的实例包括膜(例如,聚酰亚胺膜、聚酯膜、聚对苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜等)、用玻璃纤维或塑料无纺纤维增强的树脂基板、硅基板和玻璃基板。
模片接合膜优选具有1×105Pa至1×1010Pa的在T0至T0+20℃温度范围内的弹性模量(特别地,由包含环氧树脂的树脂组合物形成的粘结剂层的弹性模量),其中T0表示切割膜的热膨胀性压敏粘合剂层的发泡起始温度(℃)。更优选的是,在T0至T0+20℃温度范围内,模片接合膜的弹性模量(特别地,由含环氧树脂的树脂组合物形成的粘结剂层的弹性模量)更优选为1×105Pa至1×108Pa,特别优选1×105Pa至1×107Pa。在模片接合膜(特别地,粘结剂层)的弹性模量(温度:T0至T0+20℃)低于1×105Pa的情况下,当热膨胀性压敏粘合剂层通过热处理发泡并剥离时,模片接合膜可追随通过热膨胀导致的压敏粘合剂的表面形状变化,从而在一些情况下可抑制剥离强度的下降。此外,模片接合膜的弹性模量(Pa)为通过热固化显示粘合力之前的模片接合膜的弹性模量。
此外,优选在(T0+20℃)下的模片接合膜的弹性模量/在(T0+20℃)下的热膨胀性压敏粘合剂层的弹性模量(有时称为“模片接合膜的弹性模量/热膨胀性压敏粘合剂层的弹性模量(T0+20℃)”)优选为1至200,000。“模片接合膜的弹性模量/热膨胀性压敏粘合剂层的弹性模量(T0+20℃)”优选为1至2000,更优选1至150。当“模片接合膜的弹性模量/热膨胀性压敏粘合剂层的弹性模量(T0+20℃)”小于1时,模片接合膜可以追随热膨胀导致的压敏粘合剂层的表面形状改变,因此在一些情况下拾取性可能下降。当“模片接合膜的弹性模量/热膨胀性压敏粘合剂层的弹性模量(T0+20℃)”大于200,000时,热膨胀导致的热膨胀性压敏粘合剂层的表面形状改变可能有时变得不足。
模片接合膜的弹性模量通过如下方式测定:在不将模片接合膜层压在切割膜上的情况下制备模片接合膜,并使用Rheometrics Co.Ltd.生产的动态粘弹性测量设备“SolidAnalyzer RS A2”,于规定温度(T0℃,(T0+20)℃)下,在氮气气氛中,在样品宽度10mm、样品长度22.5mm、样品厚度0.2mm、频率1Hz和升温速率10℃/分钟的条件下,以拉伸模式测量弹性模量,将其作为得到的拉伸贮能弹性模量E’的值。
此外,热膨胀性压敏粘合剂层的发泡起始温度(T0)是指通过热处理能够将包含发泡剂(热膨胀性微球等)的热膨胀性压敏粘合剂层的粘合力降至加热前粘合力的10%以下的最低热处理温度。
因此,发泡起始温度可通过测量能够将包含发泡剂(热膨胀性微球等)的热膨胀性压敏粘合剂层的粘合力(压敏粘合力)降至加热前粘合力的10%以下的最低热处理温度来确定。具体地,将具有宽度20mm和厚度25μm的聚对苯二甲酸乙二酯膜(商品名“Lumilar S10#25”(由Toray Industries,Inc.制造);有时称作“PET膜”)通过手动辊粘贴至切割膜的含发泡剂(热膨胀性微球等)的热膨胀性压敏粘合剂层表面上,以不夹带气泡,从而制备试验片。关于该试验片,在粘贴所述PET膜30分钟后,将该PET膜以180°剥离角度剥离,然后测量此时的压敏粘合力(测量温度:23℃,拉伸速率:300mm/min,剥离角度:180°),并将该压敏粘合力作为“初始压敏粘合力”。另外,将通过上述方法生产的试验片放置在设定为各温度(热处理温度)的热循环干燥器中1分钟,然后从热循环干燥器中取出,接着将其静置在23℃下2小时。此后,将PET膜以180°剥离角度剥离,然后测量此时的压敏粘合力(测量温度:23℃,拉伸速率:300mm/min,剥离角度:180°),并将该压敏粘合力作为“热处理后的压敏粘合力”。然后,将热处理后压敏粘合力变为初始压敏粘合力的10%以下的最低热处理温度作为发泡起始温度(T0)。
此处,模片接合膜的弹性模量可通过调节模片接合膜或压敏粘合剂层基础聚合物的种类以及交联或固化状态来控制。
模片接合膜的厚度没有特别限制。然而,其为约5μm至100μm,优选约5μm至50μm。
切割模片接合膜的模片接合膜优选通过隔离体(图中未示出)保护。隔离体具有作为保护模片接合膜直至其实际使用的保护材料的功能。此外,当将模片接合膜转移至热膨胀性压敏粘合剂层时,隔离体可用作支撑基材。当将工件粘附在切割模片接合膜的模片接合膜上时,剥离隔离体。作为隔离体,还可使用聚乙烯或聚丙烯膜,以及表面涂布有脱模剂如氟类脱模剂或长链烷基丙烯酸酯类脱模剂的塑料膜(聚对苯二甲酸乙二酯)或纸。隔离体可通过常规已知方法形成。另外,隔离体的厚度等没有特别限制。
根据本发明,可使得切割模片接合膜具有抗静电功能。由于抗静电功能,可防止在切割模片接合膜粘附和剥离,或通过静电能使工件(半导体晶片等)充电时,电路因静电能的产生而破坏。抗静电功能的赋予可通过例如以下适当方式进行:向基材、热膨胀性压敏粘合剂层和模片接合膜中添加抗静电剂或导电性物质的方法,或在基材上设置由电荷转移配合物(complex)或金属膜等组成的导电层的方法。关于这些方法,优选难以产生具有改变半导体晶片品质风险的杂质离子的方法。为了赋予导电性和改进热传导性等目的而共混的导电性物质(导电性填料)的实例包括球形、针状、片状金属粉末如银、铝、金、铜、镍和导电性合金;金属氧化物如氧化铝;无定形炭黑和石墨。然而,基于不具有漏电性的观点,模片接合膜优选非导电性的。
本发明的切割模片接合膜可具有适当的形式如片状或带状。
(切割模片接合膜的生产方法)
本发明的切割模片接合膜的生产方法以切割模片接合膜10为例描述。首先,基材1a可通过常规已知的膜生产方法形成。成膜法的实例包括压延成膜法、在有机溶剂中的流延法(castingmethod)、在严格密闭体系中的膨胀挤出法、T-膜挤出法、共挤出法和干法层压法。
接着,热膨胀性压敏粘合剂层1b通过将含热膨胀性压敏粘合剂的热膨胀性压敏粘合剂组合物施涂在基材1a上,接着干燥(根据需要,在加热下交联)形成。施涂方式的实例包括辊涂、丝网涂布(screen coating)和凹印涂布。就此而言,热膨胀性压敏粘合剂组合物的施涂可直接在基材1a上进行,以在基材1a上形成热膨胀性压敏粘合剂层1b,或可将热膨胀性压敏粘合剂组合物施涂于表面已进行脱模处理的隔离纸等上,然后转移至基材1a上,从而在基材1a上形成热膨胀性压敏粘合剂层1b。
另一方面,涂布层可通过在隔离纸上施涂用于形成模片接合膜3的形成材料以具有规定厚度,并在规定条件下进一步干燥形成。模片接合膜3通过将该涂布层转移至热膨胀性压敏粘合剂层1b上而在热膨胀性压敏粘合剂层1b上形成。关于此点,模片接合膜3还可通过在热膨胀性压敏粘合剂层1b上直接施涂用于形成模片接合膜3的形成材料,接着在规定条件下干燥,而在热膨胀性压敏粘合剂层1b上形成。根据本发明的切割模片接合膜10可如上所述获得。
(半导体晶片)
半导体晶片没有特别限制,只要其为已知的或通常使用的半导体晶片即可,并可从各种材料制成的半导体晶片中适当地选择。在本发明中,作为半导体晶片,可适当地使用硅晶片
(半导体器件的生产方法)
用于生产本发明半导体器件的方法没有特别限制,只要其为使用切割模片接合膜生产半导体器件的方法即可。例如,半导体器件可在适当地剥离在模片接合膜上任选地设置的隔离体后,如下使用本发明的切割模片接合膜来生产。以下,参考图3A至3E,同时使用切割模片接合膜11为例描述所述方法。首先,将半导体晶片4压接在切割模片接合膜11中的模片接合膜31上以通过粘附和保持固定半导体晶片(安装步骤)。在用加压装置如加压辊加压的同时进行该步骤。
接着,进行半导体晶片4的切割。从而,将半导体晶片4切割成规定尺寸并个体化(形成小片),以生产半导体芯片5。所述切割按照常规方法例如从半导体晶片4的电路面侧进行。另外,本步骤可采取例如形成达到切割模片接合膜11的切口的称作完全切割的切割方法。对本步骤中使用的切割装置没有特别限制,可使用常规已知的装置。此外,由于半导体晶片4通过切割模片接合膜11粘贴并固定,从而可抑制芯片破裂和碎屑飞散,以及还可抑制半导体晶片破损。就此而言,由于模片接合膜由包含环氧树脂的树脂组合物形成,因此即使当将其通过切割切断时,在切断面上产生由模片接合膜粘结剂层的粘结剂挤出也受到抑制或防止。结果,可抑制或防止切断面自身的再附着(粘连),从而可更加方便地进行以下要描述的拾取。
在切割模片接合膜扩展的情况下,扩展可使用常规已知的扩展装置进行。扩展装置具有能够推动切割模片接合膜向下经过切割环的环状外环,和直径小于外环并支撑切割模片接合膜的内环。由于扩展步骤,可以防止相邻的半导体芯片在以下要描述的拾取步骤中通过相互接触而损坏。
进行半导体芯片5的拾取,以收集粘贴并固定于切割模片接合膜11上的半导体芯片。拾取方法没有特别限制,可采用常规已知的各种方法。其实例包括以下方法:包括用针从切割模片接合膜的基材1a侧向上推动各半导体芯片5,并用拾取装置拾取推出的半导体芯片5的方法。
此处,拾取在通过将热膨胀性压敏粘合剂层1b进行规定热处理的热膨胀后进行。因此,热膨胀性压敏粘合剂层1b与模片接合膜31的压敏粘合力(粘合力)降低,半导体芯片5的剥离变得容易。结果,可在不损坏半导体芯片5的情况下拾取。关于此点,可用于热处理的加热装置没有特别限制,可提及上述示例的加热装置如热盘、热风干燥器、近红外灯或空气干燥器。
拾取的半导体芯片5通过插入其间的模片接合膜31粘贴并固定在被粘物6上(模片接合)。将被粘物6安装在加热垫片(heatblock)9上。被粘物6的实例包括引线框、TAB膜、基板和分别生产的半导体芯片。被粘物6例如可为易于变形的可变形被粘物,或难于变形的不可变形被粘物(半导体晶片等)。
可使用常规已知的基板作为所述基板。此外,可使用金属引线框如Cu引线框和42合金引线框以及由玻璃环氧树脂、BT(双马来酰亚胺-三嗪)或聚酰亚胺组成的有机基板作为引线框。然而,本发明不限于上述,包括在安装半导体元件和与半导体元件电连接后可使用的电路基板。
由于模片接合膜31由包含环氧树脂的树脂组合物形成,因此通过热固化增强粘合力,并由此可将半导体芯片5粘贴并固定在被粘物6上,以改进耐热强度。此处,可使其中半导体芯片5通过半导体晶片附着部分31a粘贴并固定在基板等上的产品进行重熔步骤。此后,引线接合通过以下进行:用接合导线7将基板端子部(内部引线)的顶端与半导体芯片5上的电极片(electrode pad)(图中未示出)电连接,此外,将半导体芯片5用密封树脂8密封,接着固化该密封树脂8。从而,生产根据本实施方案的半导体器件。
实施例
以下将示例性地详细描述本发明的优选实施例。然而,除非另外说明,否则这些实施例中描述的材料和混合量等不意欲限制本发明的范围至那些,它们仅为解释性的实例。另外,除非另外说明,否则各实施例中的份均为重量标准。
实施例1
<切割膜的生产>
丙烯酸类聚合物X通过如下获得:将95份丙烯酸2-乙基己酯(以下有时称作“2EHA”)、5份丙烯酸2-羟乙酯(以下有时称作“HEA”)和65份甲苯装入装配有冷却管、氮气导入管、温度计和搅拌装置的反应器中,接着在氮气流中于61℃下进行聚合处理6小时。
接下来,热膨胀性压敏粘合剂的压敏粘合剂溶液通过将3份多异氰酸酯化合物(商品名“COLONATEL”,NipponPolyurethane Industry Co.Ltd.生产)和35份热膨胀性微球(商品名“Microsphere F-50D”,Matsumoto Yushi-Seiyaku Co.,Ltd.生产;发泡起始温度:120℃)加入到100份丙烯酸类聚合物X中制备。
作为切割膜的热膨胀性压敏粘结剂片通过以下制备:将上述制得的压敏粘合剂溶液涂布到具有厚度为50μm的聚对苯二甲酸乙二醇酯膜(PET膜),接着在80℃下进行热交联3分钟,以形成具有厚度40μm的压敏粘合剂层(热膨胀性压敏粘合剂层)。
<模片接合膜的生产>
基于100份具有丙烯酸乙酯-甲基丙烯酸甲酯作为主要组分的丙烯酸酯类聚合物(商品名“PARACRONW-197CM”,由Negami Chemical Industrial Co.,Ltd.生产),将59份环氧树脂1(商品名“EPICOAT 1004”,由Japan Epoxy Resins(JER)Co.,Ltd.生产)、53份环氧树脂2(商品名“EPICOAT 827”,由Japan EpoxyResins(JER)Co.,Ltd.生产)、121份酚醛树脂(商品名“MILEXXLC-4L”,由Mitsui Chemicals,Inc.生产)、222份球状二氧化硅(商品名“SO-25R”,由Admatechs Co.,Ltd.生产)溶解在甲乙酮中,从而制备具有固体浓度为23.6重量%的粘结剂组合物溶液。
将所述粘结剂组合物溶液施涂在作为隔离衬垫(隔离体)的由在其上已进行硅酮脱模处理的具有38μm厚度的PET膜构成的脱模处理膜上,然后在130℃下干燥2分钟。从而,生产具有厚度25μm的模片接合膜A。此外,通过将模片接合膜A转移至上述切割膜的热膨胀性压敏粘合剂层上,得到根据本实施例1的切割模片接合膜。
实施例2
<模片接合膜的生产>
基于100份具有丙烯酸乙酯-甲基丙烯酸甲酯作为主要组分的丙烯酸酯类聚合物(商品名“PARACRONW-197CM”,由Negami Chemical Industrial Co.,Ltd.生产),将102份环氧树脂1(商品名“EPICOAT 1004”,由Japan Epoxy Resins(JER)Co.,Ltd.生产)、13份环氧树脂2(商品名“EPICOAT 827”,由Japan EpoxyResins(JER)Co.,Ltd.生产)、119份酚醛树脂(商品名“MILEXXLC-4L”,由Mitsui Chemicals,Inc.生产)、222份球状二氧化硅(商品名“SO-25R”,由Admatechs Co.,Ltd.生产)溶解在甲乙酮中,从而制备具有固体浓度为23.6重量%的粘结剂组合物溶液。
将所述粘结剂组合物溶液施涂在作为隔离衬垫(隔离体)的由在其上已进行硅酮脱模处理的具有38μm厚度的PET膜构成的脱模处理膜上,然后在130℃下干燥2分钟。从而,生产具有厚度25μm的模片接合膜B。
除了使用模片接合膜B代替模片接合膜A之外,以与实施例1相同的方式生产切割模片接合膜。
实施例3至4
除了将切割膜变为具有表1所示组成和含量的相应切割膜之外,以与实施例1相同的方式在各实施例3至4中生产切割模片接合膜。
比较例1至5
除了将切割膜变为具有表1所示组成和含量的相应切割膜之外,以与实施例1相同的方式在各比较例1至5中生产切割模片接合膜。
比较例6
除了将20份的萜酚类树脂(terpenephenol-based resin)(商品名″PR-12603″,由Sumitomo Bakelite Co.,Ltd.制造)加入到切割膜的压敏粘合剂中以外,以与实施例1同样的方式在比较例6中制造切割模片接合膜。
2EHA:丙烯酸2-乙基己酯
BA:丙烯酸正丁酯
AA:丙烯酸
HEA:丙烯酸2-羟乙酯
C/L:多异氰酸酯化合物(商品名“COLONATEL”,由NipponPolyurethane Industry Co.,Ltd.生产)
SUMILITE:萜酚类树脂(商品名″PR-12603″,由SumitomoBakelite Co.,Ltd.制造)
(评价)
关于实施例1至4和比较例1至6的切割模片接合膜,通过以下的评价或测量方法来评价或测量各切割膜中的压敏粘合剂层的表面自由能、关于各切割膜中的压敏粘合剂层的弹性模量、各模片接合膜的弹性模量、各模片接合膜的弹性模量/各切割膜中的压敏粘合剂层的弹性模量(T0+20℃)、切割性和拾取性。评价和测量的结果如表1中所述。
<表面自由能的评价方法>
接触角θ(rad)通过如下测定:在按照JIS Z 8703的试验场所的环境(温度:23±2℃,湿度:50±5%RH)下,将约1μL水(蒸馏水)或二碘甲烷的液滴滴加在各切割膜的压敏粘合剂层(在热膨胀性压敏粘合剂层(实施例1至4、比较例1至4和6)的情况下,热膨胀前的热膨胀性压敏粘合剂层)的表面上,并使用表面接触角计“CA-X”(由FACE Company制造)在滴加30秒后通过三点法测量。切割膜中压敏粘合剂层的表面自由能(γs)通过求解作为联立线性方程的两个方程计算,所述联立线性方程利用得到的两个接触角和从文献已知的水和二碘甲烷的表面自由能值以及以下方程(1a)-(1c)得到。
γs=γs d+γs p (1a)
γL=γL d+γL p (1b)
(1+cosθ)γL=2(γs dγL d)1/2+2(γs pγL p)1/2(1c)
此处,方程(1a)-(1c)中各符号分别如下。
θ:用水或二碘甲烷液滴测量的接触角(rad)
γs:压敏层的表面自由能(mJ/m2)
γs d:在压敏层表面自由能中的色散分量(mJ/m2)
γs p:在压敏层表面自由能中的极性分量(mJ/m2)
γL:水或二碘甲烷的表面自由能(mJ/m2)
γL d:水或二碘甲烷表面自由能中的色散分量(mJ/m2)
γL p:水或二碘甲烷表面自由能中的极性分量(mJ/m2)
已知的水(蒸馏水)表面自由能值:[色散分量(γL d):21.8(mJ/m2),极性分量(γL p):51.0(mJ/m2)]
已知的二碘甲烷表面自由能值:[色散分量(γL d):49.5(mJ/m2),极性分量(γL p):1.3(mJ/m2)]
<切割膜的压敏粘合剂层的弹性模量测量方法>
关于切割膜的压敏粘合剂层的弹性模量,通过制备除了不包含发泡剂之外相同的压敏粘合剂层(样品)来评价或测量。弹性模量使用由Rheometrics Co.,Ltd.生产的动态粘弹性测量装置“ARES”,在频率1Hz、升温速率5℃/min和应变0.1%(23℃)或0.3%(150℃)条件下,以剪切模式测量,并作为在23℃或150℃下得到的剪切贮能弹性模量G’的值。
<模片接合膜弹性模量的测量方法>
模片接合膜的弹性模量通过如下测定并作为获得的拉伸贮能弹性模量E’的值:不将模片接合膜层压在切割膜上来制备模片接合膜,并使用由Rheometrics Co.,Ltd.生产的动态粘弹性测量装置“Solid Analyzer RS A2”,于氮气气氛中在规定温度(T0,(T0+20)℃)下,在样品宽度10mm、样品长度22.5mm、样品厚度0.2mm、频率1Hz和升温速率10℃/分钟的条件下,以拉伸模式测量弹性模量。
关于此点,T0如下测定。
通过将具有厚度25μm的PET膜借助于手动辊粘贴在切割膜的压敏粘合剂层(热膨胀性压敏粘合剂层)表面上以致不夹带气泡来生产试验片。粘贴所述PET膜30分钟后,将PET膜以180°剥离角度剥离,然后测量此时(测量温度:23℃,拉伸速率:300mm/min,剥离角度:180°)的压敏粘合力,并将该压敏粘合力作为“初始压敏粘合力”。
另外,将通过上述方法制备的试验片放置在设定为各温度(热处理温度)的热循环干燥器中1分钟,然后从热循环干燥器中取出,接着静置在23℃下2小时。此后,将PET膜以180°剥离角度剥离,然后测量此时(测量温度:23℃,拉伸速率:300mm/min,剥离角度:180°)的压敏粘合力,并将该压敏粘合力作为“热处理后的压敏粘合力”。
将“热处理后的压敏粘合力”降至“初始压敏粘合力”的10%以下时的最低热处理温度作为发泡起始温度(T0)。
根据实施例1至4以及比较例1至4和6的各切割膜的热膨胀性压敏粘合剂层的发泡起始温度T0为120℃。由于根据比较例5的切割膜的压敏粘合剂层不包含发泡剂,因此,该切割膜不具有发泡起始温度。然而,为比较弹性模量,认为比较例1的切割膜的发泡起始温度为120℃。因此,在该情况下,T0+20℃为140℃。
<弹性模量比例的评价方法>
模片接合膜的弹性模量/切割膜的压敏粘合剂层的弹性模量(T0+20℃)从通过上述<切割膜的压敏粘合剂层的弹性模量的测量方法>和<模片接合膜的弹性模量的测量方法>中的评价和测量得到的“模片接合膜在(T0+20℃)下的弹性模量”和“切割膜的压敏粘合剂层在(T0+20℃)下的弹性模量”计算得出。
<切割性/拾取性的评价方法>
使用各实施例和比较例的切割模片接合膜,通过实际切割半导体晶片评价切割性,然后评价剥离性,分别将其作为各切割模片接合膜的切割性能和拾取性能的评价。
将半导体晶片(直径:8英寸,厚度:0.6mm;硅镜面晶片)进行背面研磨处理,并使用具有厚度0.025mm的镜面晶片作为工件。从切割模片接合膜剥离隔离体后,将镜面晶片(工件)在40℃下通过辊压接合粘贴在模片接合膜上,并进一步进行切割。此处,所述切割作为完全切割进行,以成为10mm2的芯片尺寸。就此而言,半导体晶片研磨条件、粘贴条件和切割条件如下。
(半导体晶片研磨条件)
研磨装置:由DISCO Corporation生产的商品名“DFG-8560”
半导体晶片:8英寸直径(研磨背面至厚度为0.6mm至0.025mm)
(粘贴条件)
粘贴装置:由Nitto Seiki Co.,Ltd.生产的商品名“MA-3000II”
粘贴速率:10mm/min
粘贴压力:0.15MPa
粘贴时的阶段温度:40℃
(切割条件)
切割装置:DISCO Corporation生产的商品名“DFD-6361”
切割环:“2-8-1”(由DISCO Corporation生产)
切割速率:30mm/sec
切割刮刀:
Z1;DISCO Corporation生产的“NBC-ZH226J27HAAA”
切割刮刀旋转速率:
Z1;30,000rpm
切割方法:单步切割
晶片芯片尺寸:10.0mm2
在切割中,确认镜面晶片(工件)是否牢固保持在切割模片接合膜上而未剥离以进行令人满意的切割。将良好进行切割的情况评级为“良好”,将未良好进行切割的情况评级为“差”,由此评价切割性。
接下来,将各切割模片接合膜放置在T0+20℃(在实施例1至4及比较例1至6中为140℃)的热盘上,以使得在基材侧的切割模片接合膜表面与热盘表面接触,并使压敏粘合剂层(热膨胀性压敏粘合剂层等)进行热处理1分钟。然后,翻转切割模片接合膜,以使得切割模片接合膜在空气中倒置(以将芯片放下),并将具有模片接合膜的芯片通过自由降落剥离。测量此时的芯片(总片数:400)剥离率(%),以评价拾取性。因此,当剥离率越接近于100%时,拾取性越好。
如表1所示,确认根据实施例1至4的切割模片接合膜切割性和拾取性优良,被粘物如半导体晶片能被牢固地保持并进行良好切割。
尽管已经参考其具体实施方案详细地描述本发明,但是对于本领域技术人员显而易见的是能在不超出本发明范围内进行各种改变和改进。
本申请基于2008年11月26日提交的日本专利申请2008-301557,在此将其全部内容引入以作参考。
Claims (4)
1.一种切割模片接合膜,其包括:
具有设置于基材上的压敏粘合剂层的切割膜,和
设置于所述压敏粘合剂层上的模片接合膜,
其中,所述切割膜的压敏粘合剂层为由包含丙烯酸类聚合物A和发泡剂的热膨胀性压敏粘合剂形成的热膨胀性压敏粘合剂层,所述丙烯酸类聚合物A是由单体组合物构成的丙烯酸类聚合物,所述单体组合物包括50重量%以上的由CH2=CHCOOR(其中R为具有6至10个碳原子的烷基)表示的丙烯酸酯,和1重量%至30重量%的含羟基单体,且不包括含羧基单体,
所述热膨胀性压敏粘合剂层具有30mJ/m2以下的表面自由能,和
其中所述模片接合膜由包含环氧树脂的树脂组合物构成。
2.根据权利要求1所述的切割模片接合膜,其中所述发泡剂是热膨胀性微球。
3.根据权利要求1所述的切割模片接合膜,其中所述切割膜的热膨胀性压敏粘合剂层由包括压敏粘合剂和发泡剂的热膨胀性压敏粘合剂形成,所述压敏粘合剂能形成具有5×104Pa至1×106Pa的在23℃至150℃温度范围内的弹性模量的压敏粘合剂层;和
其中所述模片接合膜具有1×105Pa至1×1010Pa的在T0至T0+20℃温度范围内的弹性模量,其中T0表示所述切割膜的热膨胀性压敏粘合剂层的发泡起始温度。
4.一种用于生产半导体器件的方法,所述方法包括采用根据权利要求1所述的切割模片接合膜。
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- 2009-11-25 US US12/625,682 patent/US20100129987A1/en not_active Abandoned
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TWI634184B (zh) * | 2012-07-05 | 2018-09-01 | 琳得科股份有限公司 | 黏著性薄片 |
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CN105102565B (zh) * | 2013-03-15 | 2018-03-06 | 日东电工株式会社 | 粘合片 |
CN109207078A (zh) * | 2017-07-04 | 2019-01-15 | 日东电工株式会社 | 切割带和切割芯片接合薄膜 |
CN109207077A (zh) * | 2017-07-04 | 2019-01-15 | 日东电工株式会社 | 切割带、切割芯片接合薄膜、及半导体装置的制造方法 |
CN110690125A (zh) * | 2019-09-10 | 2020-01-14 | 广东芯华微电子技术有限公司 | 一种foplp晶圆整体封装方法 |
CN115348997A (zh) * | 2020-03-25 | 2022-11-15 | 大日本印刷株式会社 | 发泡性粘接片和物品的制造方法 |
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JP2010126598A (ja) | 2010-06-10 |
KR20100059734A (ko) | 2010-06-04 |
CN101740351B (zh) | 2012-05-23 |
US20100129987A1 (en) | 2010-05-27 |
TW201030118A (en) | 2010-08-16 |
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