CN101702327A - 一种存储器阵列 - Google Patents
一种存储器阵列 Download PDFInfo
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- CN101702327A CN101702327A CN200910197806A CN200910197806A CN101702327A CN 101702327 A CN101702327 A CN 101702327A CN 200910197806 A CN200910197806 A CN 200910197806A CN 200910197806 A CN200910197806 A CN 200910197806A CN 101702327 A CN101702327 A CN 101702327A
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- 239000000758 substrate Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000007667 floating Methods 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 238000003491 array Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
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CN2009101978063A CN101702327B (zh) | 2009-10-28 | 2009-10-28 | 一种存储器阵列 |
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CN2009101978063A CN101702327B (zh) | 2009-10-28 | 2009-10-28 | 一种存储器阵列 |
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CN101702327A true CN101702327A (zh) | 2010-05-05 |
CN101702327B CN101702327B (zh) | 2012-11-14 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102184740A (zh) * | 2011-01-31 | 2011-09-14 | 清华大学 | 垂直折叠式存储器阵列结构 |
CN102280140A (zh) * | 2010-06-09 | 2011-12-14 | 上海宏力半导体制造有限公司 | 双分离栅快闪存储阵列的编程方法 |
CN102568558A (zh) * | 2012-02-28 | 2012-07-11 | 上海宏力半导体制造有限公司 | 存储器及其操作方法 |
CN102610617A (zh) * | 2012-03-31 | 2012-07-25 | 上海宏力半导体制造有限公司 | 一种多比特sonos闪存单元、阵列及操作方法 |
CN103778948A (zh) * | 2014-01-09 | 2014-05-07 | 上海华虹宏力半导体制造有限公司 | 存储器阵列的控制方法 |
CN103903650A (zh) * | 2014-03-17 | 2014-07-02 | 上海华虹宏力半导体制造有限公司 | 存储器阵列及其控制方法和闪存 |
CN104505120A (zh) * | 2014-11-24 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 闪存结构、存储阵列及其编程、擦除和读取方法 |
CN105405463A (zh) * | 2014-09-12 | 2016-03-16 | 上海华虹宏力半导体制造有限公司 | 存储器阵列 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7646054B2 (en) * | 2006-09-19 | 2010-01-12 | Sandisk Corporation | Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches |
CN101465161A (zh) * | 2008-12-30 | 2009-06-24 | 上海宏力半导体制造有限公司 | 共享字线的分栅式闪存 |
-
2009
- 2009-10-28 CN CN2009101978063A patent/CN101702327B/zh active Active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102280140B (zh) * | 2010-06-09 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 双分离栅快闪存储阵列的编程方法 |
CN102280140A (zh) * | 2010-06-09 | 2011-12-14 | 上海宏力半导体制造有限公司 | 双分离栅快闪存储阵列的编程方法 |
CN102184740B (zh) * | 2011-01-31 | 2013-10-09 | 清华大学 | 垂直折叠式存储器阵列结构 |
CN102184740A (zh) * | 2011-01-31 | 2011-09-14 | 清华大学 | 垂直折叠式存储器阵列结构 |
CN102568558A (zh) * | 2012-02-28 | 2012-07-11 | 上海宏力半导体制造有限公司 | 存储器及其操作方法 |
CN102610617A (zh) * | 2012-03-31 | 2012-07-25 | 上海宏力半导体制造有限公司 | 一种多比特sonos闪存单元、阵列及操作方法 |
CN102610617B (zh) * | 2012-03-31 | 2017-11-24 | 上海华虹宏力半导体制造有限公司 | 一种多比特sonos闪存单元、阵列及操作方法 |
CN103778948A (zh) * | 2014-01-09 | 2014-05-07 | 上海华虹宏力半导体制造有限公司 | 存储器阵列的控制方法 |
CN103903650A (zh) * | 2014-03-17 | 2014-07-02 | 上海华虹宏力半导体制造有限公司 | 存储器阵列及其控制方法和闪存 |
CN103903650B (zh) * | 2014-03-17 | 2018-01-26 | 上海华虹宏力半导体制造有限公司 | 存储器阵列及其控制方法和闪存 |
CN105405463A (zh) * | 2014-09-12 | 2016-03-16 | 上海华虹宏力半导体制造有限公司 | 存储器阵列 |
CN105405463B (zh) * | 2014-09-12 | 2019-11-22 | 上海华虹宏力半导体制造有限公司 | 存储器阵列 |
CN104505120A (zh) * | 2014-11-24 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 闪存结构、存储阵列及其编程、擦除和读取方法 |
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Publication number | Publication date |
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CN101702327B (zh) | 2012-11-14 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |