CN101702327B - 一种存储器阵列 - Google Patents
一种存储器阵列 Download PDFInfo
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- CN101702327B CN101702327B CN2009101978063A CN200910197806A CN101702327B CN 101702327 B CN101702327 B CN 101702327B CN 2009101978063 A CN2009101978063 A CN 2009101978063A CN 200910197806 A CN200910197806 A CN 200910197806A CN 101702327 B CN101702327 B CN 101702327B
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- 239000000758 substrate Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000007667 floating Methods 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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Abstract
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Priority Applications (1)
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CN2009101978063A CN101702327B (zh) | 2009-10-28 | 2009-10-28 | 一种存储器阵列 |
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CN2009101978063A CN101702327B (zh) | 2009-10-28 | 2009-10-28 | 一种存储器阵列 |
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CN101702327A CN101702327A (zh) | 2010-05-05 |
CN101702327B true CN101702327B (zh) | 2012-11-14 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102280140B (zh) * | 2010-06-09 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 双分离栅快闪存储阵列的编程方法 |
CN102184740B (zh) * | 2011-01-31 | 2013-10-09 | 清华大学 | 垂直折叠式存储器阵列结构 |
CN102568558B (zh) * | 2012-02-28 | 2017-12-08 | 上海华虹宏力半导体制造有限公司 | 存储器的操作方法 |
CN102610617B (zh) * | 2012-03-31 | 2017-11-24 | 上海华虹宏力半导体制造有限公司 | 一种多比特sonos闪存单元、阵列及操作方法 |
CN103778948A (zh) * | 2014-01-09 | 2014-05-07 | 上海华虹宏力半导体制造有限公司 | 存储器阵列的控制方法 |
CN103903650B (zh) * | 2014-03-17 | 2018-01-26 | 上海华虹宏力半导体制造有限公司 | 存储器阵列及其控制方法和闪存 |
CN105405463B (zh) * | 2014-09-12 | 2019-11-22 | 上海华虹宏力半导体制造有限公司 | 存储器阵列 |
CN104505120A (zh) * | 2014-11-24 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | 闪存结构、存储阵列及其编程、擦除和读取方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101465161A (zh) * | 2008-12-30 | 2009-06-24 | 上海宏力半导体制造有限公司 | 共享字线的分栅式闪存 |
CN101517707A (zh) * | 2006-09-19 | 2009-08-26 | 桑迪士克股份有限公司 | 具有由衬底沟槽中的间隔物形成的浮动栅极的非易失性存储器单元的阵列 |
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2009
- 2009-10-28 CN CN2009101978063A patent/CN101702327B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101517707A (zh) * | 2006-09-19 | 2009-08-26 | 桑迪士克股份有限公司 | 具有由衬底沟槽中的间隔物形成的浮动栅极的非易失性存储器单元的阵列 |
CN101465161A (zh) * | 2008-12-30 | 2009-06-24 | 上海宏力半导体制造有限公司 | 共享字线的分栅式闪存 |
Non-Patent Citations (1)
Title |
---|
于跃.《新型SONOS单元NOR闪存设计》.《中国优秀硕士学位论文全文数据库电子期刊》.中国学术期刊(光盘版)电子杂志社,2009, * |
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