CN101689533A - 半导体封装组件及其制造方法 - Google Patents
半导体封装组件及其制造方法 Download PDFInfo
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- CN101689533A CN101689533A CN200880022659A CN200880022659A CN101689533A CN 101689533 A CN101689533 A CN 101689533A CN 200880022659 A CN200880022659 A CN 200880022659A CN 200880022659 A CN200880022659 A CN 200880022659A CN 101689533 A CN101689533 A CN 101689533A
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Abstract
本发明提供一种半导体封装组件及其制造方法,该半导体封装组件具有:半导体器件;半导体基板,在其一面上配置了上述半导体器件;盖基板,其一面隔着间隔与上述半导体基板的一面对置;间隔体,其被配置在上述半导体基板的一面与上述盖基板的一面之间,将上述半导体基板与上述盖基板接合;和滤光器,其在上述盖基板上被设置成不与上述间隔体重叠而与上述半导体器件重叠。根据本发明,可提供一种可抑制由于切割工序中的碎屑所造成的滤光器的剥离的半导体封装组件及其制造方法。
Description
技术领域
本发明涉及半导体封装组件及其制造方法,具体说是涉及防止被配置在半导体封装组件中的滤光器的剥离的对策。
本申请主张于2007年6月29日向日本国提出的特愿2007-171915号的优先权,并在此引用其内容。
背景技术
对于近年来,移动电话、便携信息终端以及数字照相机等移动电子设备来说,由于其具有便携性和轻量化的特点,所以有庞大的市场需求。因此,对于其中搭载的半导体IC等各种芯片,必须实现进一步的小型化、薄型化,并要求有稳定的制造工序。
在这些移动电子设备中搭载的以CCD、CMOS等为代表的光学系统半导体器件中,使用了红外截止滤光器等光学滤光器。在把这些光学滤光器应用在光学系统半导体晶片级封装组件中时,有时需要在玻璃基板上形成光学滤光器,进行封装加工。
作为以往的在玻璃基板上形成滤光器的方法,有在完成封装加工后,在玻璃基板上形成滤光器的方法;和首先在玻璃基板上形成滤光器,然后进行封装加工的方法。为了保护滤光器而在封装组件内部形成滤光器的情况下,要采用后者的方法。另外,相对前者需要进行针对每1个封装组件分别形成滤光器的操作,而后者具有能够以晶片级一次性地形成滤光器的优点。
图13是在封装组件内部形成滤光器的以往半导体封装组件的制造工序剖面图。该半导体封装组件40的制造工序,如图13(a)所示,在盖基板44的一面44a的整面配置滤光器46。然后,隔着间隔体45把滤光器46与半导体基板42接合。然后。如图13(b)所示,在图中L虚线所示的部位切割半导体晶片。通过该切割所得到的芯片中,如图13(d)所示,有可能产生滤光器46的剥离60。该滤光器46的剥离60经过可靠性试验等将更为明显,有时会导致半导体封装组件40发生故障。另外,由于间隔体45与滤光器46直接粘接,所以,如果滤光器46与盖基板44的粘接性弱,则在由于间隔体45的膨胀收缩而产生的应力的作用下,滤光器46有可能发生剥离。
发明内容
本发明就是鉴于上述的情况而提出的,其目的之一是提供一种可抑制切割工序中的由于碎屑(chipping)而导致的滤光器的剥离的半导体封装组件。另外,本发明的目的之二是提供一种在切割处理中可抑制滤光器的剥离的半导体封装组件的制造方法。
本发明的半导体封装组件的第1方式的半导体封装组件,至少由在一面上配置了半导体器件的半导体基板;具有从上述半导体基板的一面隔着间隙与上述半导体基板对置配置的一面,并且该一面在全部区域中具有平坦部或在具有平坦部的同时具有局部凸部的盖基板;以及在上述盖基板的与上述半导体基板对置的一面的平坦部或凸部上突出设置的、将上述盖基板与上述半导体基板粘接的间隔体构成,并且具有被配置在上述盖基板上的滤光器,上述滤光器位于与上述半导体器件重叠的位置,而且不与上述间隔体重叠。
本发明的半导体封装组件的第2方式,在上述第1方式中,上述滤光器按照上述半导体基板、上述滤光器、上述盖基板的顺序重叠配置。
本发明的半导体封装组件的第3方式,在上述第1方式中,上述滤光器按照上述半导体基板、上述盖基板、上述滤光器的顺序重叠配置。
本发明的半导体封装组件的第4方式,在上述第1方式中,上述滤光器由第1滤光器和第2滤光器构成,并且按照上述半导体基板、上述第1滤光器、上述盖基板、上述第2滤光器的顺序重叠配置。
本发明的半导体封装组件的第5方式,至少具有:位于上述半导体基板的一面侧,与上述半导体器件电连接的电极;从上述半导体基板的另一面侧朝向上述电极设置的贯通电极;和与上述贯通电极电连接的焊料凸块。
本发明的半导体封装组件的制造方法的第1方式,用于制造半导体封装组件,该半导体封装组件至少由在一面上配置了半导体器件的半导体基板;具有从上述半导体基板的一面隔着间隙与上述半导体基板对置配置的一面,并且该一面在全区域中具有平坦部或在具有平坦部的同时具有局部凸部的盖基板;以及在上述盖基板的与上述半导体基板对置的一面的平坦部或凸部上突出设置的,将上述盖基板与上述半导体基板粘接的间隔体构成,并且具有被配置在上述盖基板上的滤光器,上述滤光器位于与上述半导体器件重叠的位置,而且不与上述间隔体重叠。该半导体封装组件的制造方法依次包括:在上述盖基板上形成上述滤光器的第1工序;将以相互隔着分离部的方式在一面上配置了多个上述半导体器件的半导体基板、与上述多个滤光器的上述盖基板,在上述分离部上隔着间隔体粘接的第2工序;和把由上述盖基板、上述半导体器件和上述间隔体构成的构造体,在存在上述间隔体的区域中,在上述半导体基板与上述盖基板的重叠方向上进行分断的第3工序。
本发明的半导体封装组件的制造方法的第2方式,其中还包括:在上述第2工序后,从上述半导体基板的另一面侧朝向上述半导体器件形成电连接的贯通电极的工序;和形成与上述贯通电极电连接的焊料凸块的工序。
发明效果
在本发明的半导体封装组件中,在一面上配置了半导体器件的半导体基板的一面隔着间隙对置地配置有盖基板。间隔体被突出地设置在该盖基板的与半导体基板对置的面上,并将半导体基板与盖基板粘接。另外,滤光器被以与半导体器件重叠的方式配置在盖基板上,并位于与间隔体不重叠的位置。
根据此结构,由于半导体封装组件的分断部位位于将间隔体分断的位置,所以不会分断滤光器,从而可防止碎屑所导致的滤光器的剥离。
另外,在本发明的半导体封装组件的制造方法中,在盖基板的一面上与半导体器件重叠形成了滤光器后,在间隔体与滤光器不重叠的位置,把隔着分离部配置了多个半导体器件的半导体基板与盖基板对置地粘接。然后,把通过粘接半导体基板、盖基板和间隔体而构成的构造体,在分断间隔体的部位进行分断。在该制造过程中,由于滤光器未被配置在半导体封装组件的分断部位,所以在分断工序中,可防止因碎屑使滤光器从盖基板剥离。
附图说明
图1是表示本发明的第1实施方式的一例的半导体封装组件的剖面图。
图2是表示本发明的应用例1的一例的半导体封装组件的剖面图。
图3是表示本发明的第2实施方式的一例的半导体封装组件的剖面图。
图4是表示本发明的应用例2的一例的半导体封装组件的剖面图。
图5是表示本发明的第3实施方式的一例的半导体封装组件的剖面图。
图6是表示本发明的应用例3的一例的半导体封装组件的剖面图。
图7是本发明的第1实施方式的半导体封装组件的剖面工序图。
图8是本发明的第2实施方式的半导体封装组件的剖面工序图。
图9是本发明的第3实施方式的半导体封装组件的剖面工序图。
图10是在本发明的第1实施方式中设置了贯通电极和焊料凸块的半导体封装组件的剖面工序图。
图11是在本发明的第2实施方式中设置了贯通电极和焊料凸块的半导体封装组件的剖面工序图。
图12是在本发明的第3实施方式中设置了贯通电极和焊料凸块的半导体封装组件的剖面工序图。
图13是以往的半导体封装组件、剖面工序图和滤光器发生了剥离的示意图。
图中标号说明:11、21、31、41-半导体器件;12、22、32、42-半导体基板;13、23、33、43-间隙;14、24、34、44-盖基板;14p、24p、34p、44p-盖基板凸部;15、25、35、45-间隔体;16、26、36、(36a、36b)、46-滤光器;17、27、37、47-电极;18、28、38-贯通电极;19、29、39-焊料凸块;10(10A、10B、10C、10D)-第1实施方式的半导体封装组件;20(20A、20B、20C、20D)-第2实施方式的半导体封装组件;30(30A、30B、30C、30D)-第3实施方式的半导体封装组件;40-以往的半导体封装组件;50-保护膜;60-滤光器的剥离;L-切割部位。
具体实施方式
下面,参照附图,对本发明进行说明。
本发明不受这些实施例的限定。
第1实施方式
图1是表示本发明的半导体封装组件的第1实施方式的剖面图。
半导体封装组件10A在半导体基板12的一面12a上配置有半导体器件11。在该半导体基板12上隔着间隙13对置地配置有盖基板14。另外,间隔体15被突出地设置在与半导体基板12对置的面14a上,将半导体基板12与盖基板14粘接。并且,按照与半导体器件11重叠且与间隔体15不重叠的方式,在盖基板14的一面14a上配置有滤光器16。
关于半导体器件11,理想的是CCD和CMOS等图像传感器。另外,也可以使用MEMS(Micro Electro Mechanical System)器件等,作为其一例,例如有微继电器、微开关、压力传感器、加速度传感器、高频滤波器和微反射镜等。
关于半导体基板12,作为材料,理想的是使用例如砷化镓、玻璃、陶瓷、锗、硅等。另外,在半导体基板12的一面12a上,理想的是配置与半导体器件11电连接的电极17。关于该电极17,虽然只要与半导体器件11电连接,则没有特殊的限定,但理想的是其配置部位是在半导体基板的一面12a上。关于电极17的材质,使用Al、Al-Cu、Al-Si-Cu等。这些被用做I/O焊盘。
关于间隙13,没有特殊的限定,可根据半导体器件11所要求的规格等条件自由地选择,只要是在例如数μm-数百μm的范围内,即可在半导体器件11的周围确保充分的间隙,并且可抑制半导体封装组件10的尺寸。
例如,在半导体器件11是CCD或CMOS等图像传感器的情况下,半导体基板12与盖基板14的距离如果太近,则会有容易受附着在盖基板14上的颗粒等的影响的情况,在这种情况下,可最大限度发挥由间隔体15确保了半导体基板12与盖基板14之间的间隙13的作用。
关于盖基板14,其隔着间隙13被配置在半导体器件11的上方,具有用于保护半导体器件11等的作用。作为盖基板14的材料,可以使用由树脂、玻璃、金属等构成的板材,在应用于CCD、CMOS等光学系统半导体器件的情况下,理想的是使用具有透光性的玻璃等材料。另外,理想的是与半导体基板12平行并对置。
间隔体15在为了确保半导体基板12与盖基板14的间隙13,把盖基板14与半导体基板12接合时,被连续地配置在半导体器件11的周围,并且被设置在不覆盖半导体器件11上的规定位置。由此,半导体器件11周围的空间13由半导体基板12、盖基板14和间隔体15气闭性地密封。关于间隔体15所使用的材料,例如有由感光性或非感光性树脂(UV固化型树脂、可见光固化型树脂、红外光固化型树脂、热固化型树脂等)构成的漆、浆料、或干胶片等。
作为适于构成间隔体15的材料,虽然可根据半导体封装组件的使用环境适宜选择,但最好使用是聚酰亚胺和苯酚类树脂等耐药性和耐热性优良的树脂。在使用聚酰亚胺树脂的情况下,在形成了层后通过进行烧结,产生交联反应,可提高耐药性和耐热性。
在构成间隔体15的材料具有感光性的情况下,作为上述感光性材料,可列举出环氧丙烯等感光性树脂和感光性玻璃浆料等。
在烧结聚酰亚胺树脂或玻璃浆料的情况下,把间隔体15形成在盖基板14侧,在把盖基板14与半导体基板12接合之前,进行间隔体15的烧结,由此可避免烧结的热对半导体器件11产生的损坏。
另外,通过使用Sn、Au等的金属接合、或玻璃、Si等作为间隔体,可将半导体封装组件气闭密封。由此,可防止间隙13内的结露。
关于滤光器16,对使用的滤光器16的种类没有限定,可根据半导体器件11的用途自由地选择陷波滤光器、ND滤光器、带通滤光器等。在把CCD或CMOS作为半导体器件使用的情况下,理想的是使用以红、绿、蓝构成的原色滤光器,由青、洋红、黄、绿构成的补色滤光器,和IR截止滤光器等。
在本发明中,滤光器16在与半导体器件11重叠的位置,被配置在盖基板14的一面14a侧。该滤光器16可以直接配置在盖基板14的一面14a上,也可以隔着被设置在盖基板14的一面14a上的层而配置。另外,配置了该滤光器16的位置与切割部位不重叠,而且也在与间隔体15不直接重叠的位置,所以,可抑制切割时由于碎屑而导致的滤光器16的剥离。另外,由于间隔体15不与滤光器16粘接,所以可防止由于间隔体15的膨胀收缩而导致的滤光器16的剥离。并且,由于滤光器16不是被配置在盖基板14的整面上,所以可缓和由于滤光器16的应力而导致的盖基板14的翘曲。
第2实施方式
如图3所示,在本发明中,滤光器26可以配置在盖基板24的另一面24b侧。在这种情况下,也可以把滤光器26直接配置在盖基板24的另一面24b上,也可以隔着被配置在该盖基板24的另一面24b上的层设置滤光器26。另外,由于配置了该滤光器26的位置与切割部位不重叠,所以,不会被切割时的碎屑所波及到。并且,由于与间隔体25也不接触,所以可避免以往出现的由于间隔体25的膨胀收缩应力而导致的滤光器26的剥离。由于该滤光器26被设置在半导体封装组件20的外周部,所以,可以在入射到半导体封装组件20之前,遮挡向半导体器件21入射的不需要的光线。
第3实施方式
如图5所示,在本发明中,滤光器36可以配置在盖基板的一面34a和另一面34b的两侧。即,在顺序重叠配置半导体基板32、第1滤光器36a、盖基板34和第2滤光器36b。关于该第1滤光器36a和第2滤光器36b的配置,可以直接配置在盖基板34上,也可以隔着被配置在盖基板34上的层间接地设置。无论在何种情况下,都和上述2个实施例同样,由于第1滤光器36a和第2滤光器36b被配置在不与间隔体35重叠的位置,所以可防止由于切割时的碎屑所导致的滤光器的剥离。而且,由于与上述实施例同样,间隔体35不直接地与两个滤光器36a、36b粘接,所以也可以防止因间隔体35的膨胀收缩应力而使这些滤光器36发生剥离的情况。并且,在把滤光器36配置在盖基板34的两面上的情况下,由于滤光器36的应力施加于盖基板34的两面上,所以可缓和盖基板34的翘曲。在光学系统半导体器件的情况下,通过改变该第1滤光器36a和第2滤光器36b的组合,例如改变ND滤光器和带通滤光器的组合等,可制作出适应各种状况的光学系统半导体封装组件30。
在本发明的半导体封装组件中,如作为第1实施方式的应用例1的图2(a)所示,在盖基板14上具有凸部14p。在间隔体15由树脂构成的情况下,由于树脂的透湿系数高,所以如果树脂的封装厚度厚,则在间隙13内可能产生结露。另外,如果从半导体基板12到盖基板14的距离短,则产生摄像特性等的光学性问题。为了改善上述双方,通过在盖基板14上设置凸部14p,可实现透湿系数高的树脂层的薄层化,抑制结露,并且通过控制盖基板14的凸部14p,可调节从半导体基板12到盖基板14的距离。此时,将半导体基板12和盖基板14的凸部14p接合的间隔体15的高度,理想的是0.5-3μm。另外,从半导体基板12到盖基板14的距离,理想的是10-100μm。
作为本发明的第2实施方式的应用例2,如图4(a)所示,在盖基板24上设有凸部24p。这样的结构可获得与应用例1相同的效果。
作为本发明的第3实施方式的应用例3,如图6(a)所示,在盖基板34上设有凸部34p。这样的结构可获得与应用例1和应用例2相同的效果。
另外,在本发明的半导体封装组件中,如图1(b)所示,也可以设置贯通电极18和焊料凸块19。从半导体基板12的另一面12b侧朝向电极17设置贯通电极18,并具有与该贯通电极18电连接的焊料凸块19。另外,在第2实施方式和第3实施方式中也是同样,分别如图3(b)和图(b)所示,可形成贯通电极28、38和焊料凸块29、39。
关于贯通电极18,形成使电极17通过贯通电极18能够与外部导通的导电路。贯通电极18的形状虽然没有限定,但优选相对半导体器件11而设置在直角方向上。另外,作为材质,优选使用锡或铜等金属。也可以在半导体基板12的另一面12b上形成与该贯通电极18连接的背面布线层。
关于焊料凸块19,形成在配置了贯通电极18的半导体基板的另一面12b上,并设置成与贯通电极18电连接。关于焊料凸块19的材质,虽然对所使用的焊料合金没有特殊的限定,但在使用无铅的焊料合金的情况下,优选使用SnAg3.0Cu0.5、或SnAg3.5Cu0.7,最好使用SnAg3.0Cu0.5。另外,关于焊料凸块19的大小和焊料凸块19的形成间隔,虽然没有特殊的限定,但理想的是,大小为30-250μm、间隔为100-400μm。
通过设置贯通电极18和焊料凸块19,与以往的引线焊接相比,可实现信号的高速化。
在本发明的第1实施方式的设置了贯通电极和焊料凸块的半导体封装组件中,作为应用例4,同样可以使用在盖基板上具有凸部14p的基板。在间隔体15由树脂构成的情况下,由于树脂的透湿系数高,所以如果树脂的密封厚度厚,则在间隙13内有可能结露。而且,如果从半导体基板12到盖基板14的距离短,则会产生摄像特性等光学性的问题。为了改善这二者,通过在盖基板14上设置凸部14p,可实现透湿系数高的树脂层的薄层化,抑制结露,并且通过控制盖基板14的凸部14p,可调节从半导体基板12到盖基板14的距离。此时,关于使半导体基板12与盖基板14的凸部14p接合的间隔体15的高度,理想的是0.5-3μm。另外,从半导体基板12到盖基板14的距离,理想的是10-100μm。
另外,在本发明的第2实施方式的设置了贯通电极和焊料凸块的半导体封装组件中,如图4(b)所示,作为在盖基板24上设置了凸部24p的基板,有应用例5。这种结构可获得与应用例4同样的效果。
并且,本发明的第3实施方式的设置了贯通电极和焊料凸块的半导体封装组件,如图6(b)所示,作为在盖基板34上设置了凸部34p的基板,有应用例6。这种结构可获得与应用例4和应用例5同样的效果。
(制造方法)
第1实施方式
第1实施方式的半导体封装组件10A的制造方法是,首先,如图7(a)所示,在盖基板14的一面上形成滤光器16。(这里,图7(a)中的盖基板14是半导体封装组件10A的盖基板14的集合体14’)。作为把滤光器16形成在基板14上的方法的一例,在盖基板4的一面14a上,使用旋涂器等形成感光性树脂,然后,通过光刻,形成与使用状况对应的图形。作为上述感光性树脂的材料,优选使用把光聚合型丙烯类树脂、和光交联型聚乙烯咔唑作为基剂的材料。另外,在形成彩色滤光器时,也可以把分散了颜料的聚酰亚胺前驱体作为着色树脂层,采用蚀刻法形成。另外,也可以是通过蒸镀,叠层了TiO2、SiO2、MgF2、Ta205等的层。
然后,如图7(b)所示,把间隔体15突出地形成在盖基板14a上,然后粘接配置了半导体器件11和电极17的半导体基板12’。(这里,图7(b)中的半导体基板12是半导体封装组件10A的半导体基板12的集合体12’)。把盖基板14面向半导体基板12’,把形成在盖基板14的一面14a上的间隔体15与半导体基板12的一面12a粘接。由此,半导体基板12与盖基板14通过间隔体15被接合。在接合时,优选使用环氧树脂或感光性BCB树脂等进行接合。
然后,利用切割锯等,沿着图7(b)所示的切割线L,切割半导体基板12、间隔体15和盖基板14,并确保间隔体15被切断,由此,如图7(c)所示,可获得本实施方式的半导体封装组件10A。
根据本发明的半导体封装组件10A的制造方法,由于滤光器16在盖基板14的一面14a上不是全面地形成,而且只形成在面的一部分上,所以,可缓和由于滤光器16的应力而导致的盖基板14的翘曲。另外,由于滤光器16未被设置在切割部位L上,所以可防止由于切割的碎屑而造成的滤光器的剥离。并且,由于滤光器16未被夹在间隔体15与盖基板14之间,所以,也可以防止因间隔体15的膨胀收缩应力使滤光器16发生剥离的情况。另外,由于滤光器16形成在半导体封装组件10A的内部,所以,在半导体封装组件10A的加工过程中,滤光器16得到了保护。
第2实施方式
下面,图8是说明本发明的第2实施方式的半导体封装组件20A的制造方法的剖面工序图。
在本发明的第2实施方式中,省略了与第1实施方式相重复的说明。
本第2实施方式的制造方法,首先,如图8(a)所示,在盖基板24的另一面24b上形成滤光器26。(这里,图8(a)中的盖基板24是半导体封装组件20A的盖基板24的集合体24’)。滤光器26的形成方法与第1实施方式相同。
然后,如图8(b)所示,形成覆盖滤光器26的保护膜50。关于该保护膜50,理想的是在后面的工序中能够被除去,最好使用可剥离的树脂或微粘接胶片等。关于该保护膜50的形成方法,使用胶片的叠层、可剥离树脂的旋涂等。
然后,与第1实施方式的图7(b)同样,如图8(c)所示那样将盖基板24、间隔体25和半导体基板22接合在一起。(这里,图8(c)中的半导体基板22是半导体封装组件20A的半导体基板22的集合体22’)。
然后,如图8(d)所示,除去在图8(b)中形成的保护膜50。关于保护膜50的除去,使用不损害滤光器26的药液(如果是胶片则使用分离器)等。另外,理想的是通过进行02灰化等干式处理来除去保护膜50。
然后,沿着图8(d)所示的切割线L切断半导体基板22、间隔体25和盖基板24,由此,如图8(e)所示那样,可获得本实施方式的半导体封装组件20A。
根据本发明的第2实施方式的半导体封装组件20A的制造方法,基于与第1实施方式同样的理由,可防止滤光器26的剥离。而且,由于形成在盖基板24的另一面24b上的滤光器26,在滤光器26形成后被保护膜50所覆盖,所以,可防止在制造工序中的滤光器26的损伤。
第3实施方式
下面,图9是说明本发明的第3实施方式的半导体封装组件30A的制造方法的剖面工序图。在本发明的第3实施方式中,省略了与第1实施方式和第2实施方式重复的说明。
本第3实施方式的制造方法,首先,如图9(a)所示,在盖基板34的一面34a和盖基板34的另一面34b上分别形成第1滤光器36a、第2滤光器36b。(这里,图9(a)中的盖基板34是半导体封装组件30A的盖基板34的集合体34’)。第1滤光器36a和第2滤光器36b的形成方法与第1实施方式、第2实施方式相同。
然后,如图9(b)所示,用保护膜50覆盖滤光器36b。关于该保护膜50的形成方法,与第2实施方式的情况相同。
然后,与第1实施方式的图7(b)同样,如图9(c)所示那样将盖基板24、间隔体25和半导体基板32接合。(这里,图9(c)中的半导体基板32是半导体封装组件30A的半导体基板32的集合体32’)。
然后,如图9(d)所示,除去在图9(b)中形成的保护膜50。该工序与第2实施方式的图8(d)所示的方法相同。
最后,沿着图9(d)所示的切割线L切断半导体基板32、间隔体35和盖基板34,由此,如图9(e)所示那样,可获得本实施方式的半导体封装组件30A。
第3实施方式也可以基于与第1实施方式、第2实施方式同样的理由,防止第1滤光器36a和第2滤光器36b的剥离。而且,由于第1滤光器36a被形成在半导体封装组件30内部,而且关于第2滤光器36b,与第2实施方式的情况同样,具有用保护膜覆盖的工序,所以可防止制造工序中的该两个滤光器的损伤。
形成贯通电极和焊料凸块的半导体封装组件的制造方法
第1实施方式
设置了贯通电极和焊料凸块的第1实施方式的半导体封装组件10B的制造方法是,首先,如图10(a)所示,在盖基板14的一面14a上形成滤光器16。(这里,图10(a)中的盖基板14是半导体封装组件10B的盖基板14的集合体14’)。作为该在盖基板14上形成滤光器16的方法的一例,在盖基板14的一面14a上使用旋涂器等形成感光性树脂,然后,通过光刻,形成与使用状况对应的图形。作为上述感光性树脂的材料,优选使用把光聚合型丙烯类树脂或光交联型聚乙烯咔唑作为基剂的材料。另外,在形成彩色滤光器时,也可以把分散了颜料的聚酰亚胺前驱体作为着色树脂层,通过蚀刻法形成。
然后,如图10(b)所示,把间隔体15突出形成在盖基板14a上,然后粘接配置了半导体器件11和电极17的半导体基板12。(这里,图10(b)中的半导体基板12是半导体封装组件10B的半导体基板12的集合体12’)。
把盖基板14面向半导体基板12,把形成在盖基板14的一面14a上的间隔体15与半导体基板12的一面12a粘接。由此,半导体基板12与盖基板14通过间隔体15被接合。在接合时,优选使用环氧树脂或感光性BCB树脂等进行接合。
然后,如图10(c)所示,从半导体基板12的另一面12b朝向电极17形成贯通孔。关于贯通孔的形成,优选使用硅的深掘蚀刻装置(DeepRIE)。使用等离子体化学气相沉积法(Plasma-EnhancedChemical Vapor Deposition),在贯通孔内形成作为氧化膜层的SiO2层,在贯通孔内形成绝缘层。然后,使用反应离子刻蚀(Reactive IonEtching),选择性地除去孔底部的SiO2层。然后,通过溅射,形成屏蔽层,并通过电解镀形成贯通电极18,另外,虽然在图中未示出,但根据需要形成背面布线层。
然后,如图10(d)所示,形成与贯通电极18电连接的焊料凸块19。关于焊料凸块19的形成,理想的是,根据需要对半导体基板12进行HASL处理、OSP处理、无电解N i/浸渍Au处理、浸渍Ag处理等。另外,虽然图中未有记载,但在制作了背面布线层的情况下,制造与该背面布线层电连接的焊料凸块19。
然后,沿着图10(d)所示的切割线L,切割半导体基板12和盖基板14,并确保间隔体15被切断,由此,如图10(e)所示,可获得具备了贯通电极18和焊料凸块19的半导体封装组件10B。
根据本发明的半导体封装组件10B的制造方法,由于滤光器16未被设置在切割部位L上,所以,可防止切割时的碎屑导致滤光器16剥离。而且,由于滤光器16在盖基板14的一面14a上不是全面形成,而且只形成在面的一部分上,所以,可缓和由滤光器16的应力所导致的盖基板14的翘曲。并且,由于滤光器16未被夹在间隔体15与盖基板14之间,所以,也可以防止因间隔体15的膨胀收缩应力使滤光器16发生剥离。另外,由于滤光器16形成在半导体封装组件10B的内部,所以,在半导体封装组件10B的加工过程中,滤光器16得到了保护。关于贯通电极18,由于开口部位未被设置在切割部位上,所以,可防止颗粒等的侵入、基于切割的变形等。
第2实施方式
下面,图11是说明本发明的第2方式例中设置了贯通电极28和焊料凸块29的半导体封装组件20B的制造方法的剖面工序图。
在本发明的设置了贯通电极28和焊料凸块29的第2实施方式中,省略了与图10的制造工序重复的说明。
本实施方式的制造方法是,首先,如图11(a)所示,在盖基板24的另一面24b上形成滤光器26。滤光器26的形成方法与图10(a)相同。(这里,图11(a)中的盖基板24是半导体封装组件20B的盖基板24的集合体24’)。
然后,如图11(b)所示,以覆盖滤光器26的方式形成保护膜50。
关于该保护膜50,理想的是在后面的工序中能够被除去,最好使用可剥离的树脂或微粘接胶片等。关于该保护膜50的形成方法,使用可剥离的树脂的旋涂、干式胶片(微粘接胶片等)的叠层。
然后,与图10(b)同样,如图11(c)所示那样将盖基板24、间隔体25和半导体基板22接合。(这里,图11(c)中的半导体基板22是半导体封装组件20B的半导体基板22的集合体22’)。
然后,如图11(d)所示,从半导体基板22的另一面22b朝向电极27形成贯通电极28。关于贯通电极28的形成,与图10(c)相同。
然后,如图11(e)所示,与图10(d)同样地形成与贯通电极28电连接的焊料凸块29。
然后,如图11(f)所示,除去在图11(b)中形成的保护膜50。关于保护膜50的除去,使用不损害滤光器26的药液或实施干式处理。关于药液,使用丙酮等有机溶剂等对滤光器没有损伤的药液等,来除去以覆盖滤光器26的方式形成的保护膜50。在干式处理中优选使用02灰化等。
然后,沿着图11(f)所示的切割线L切断半导体基板22、间隔体25和盖基板24,由此,如图11(g)所示那样,可获得本实施方式的半导体封装组件20B。
根据本实施方式的制造方法,基于与具备了贯通电极28和焊料凸块29的图10的第1实施方式同样的理由,可防止滤光器26的剥离。而且,由于形成在盖基板24的另一面24b上的滤光器26,在滤光器26形成后被保护膜50覆盖,所以,可防止在制造工序中的滤光器26的损伤。另外,关于贯通电极28,由于开口部位未被配置在切割部位上,所以可防止颗粒等的侵入和由切割引起的变形等。
第3实施方式
下面,图12是说明具备了贯通电极和焊料凸块的第3实施方式的半导体封装组件30B的制造方法的剖面工序图。
本实施方式的制造方法,首先,如图12(a)所示,在盖基板34的一面34a和盖基板34的另一面34b上分别形成第1滤光器36a、第2滤光器36b。(这里,图12(a)中的盖基板34是半导体封装组件30B的盖基板34的集合体34’)。第1滤光器36a和第2滤光器36b的形成方法与图10的制造工序相同。
然后,如图12(b)所示,用保护膜50覆盖第2滤光器36b。关于该保护膜50的形成方法,与图11(b)的制造工序相同。
然后,与图10(b)同样,如图12(c)所示那样将盖基板24、间隔体25和半导体基板32接合。(这里,图12(c)中的半导体基板32是半导体封装组件30A的半导体基板32的集合体32’)。
然后,如图12(d)所示,从半导体基板32的另一面32b朝向电极37形成贯通电极38。关于贯通电极38的形成,与图10(c)相同。
然后,如图12(e)所示,与图10(d)相同地形成与贯通电极38电连接的焊料凸块39。
然后,如图12(f)所示,除去在图12(b)中形成的保护膜50。该工序与图11(f)相同。
最后,沿着图12(f)所示的切割线L切断半导体基板32、间隔体35和盖基板34,由此,如图12(g)所示那样,可获得本实施方式的半导体封装组件30B。
在该实施方式中也基于与图11和图12的制造工序同样的理由,可防止第1滤光器36a和第2滤光器36b的剥离。而且,由于第1滤光器36a被形成在半导体封装组件30B的内部,而且由于针对第2滤光器36b,与第2实施方式的情况同样,具有用保护膜50覆盖的工序,所以可防止制造工序中的该两个滤光器的损伤。另外,关于贯通电极38,由于开口部位未被配置在切割部位上,所以可防止颗粒等的侵入和由于切割引起的变形等。
另外,在第1实施方式的制造工序中,也可以如应用例1和4所示那样,使用在盖基板14上设置了凸部14p的基板。在间隔体15由树脂构成的情况下,由于树脂的透湿系数高,所以如果树脂的封装厚度厚,则在间隙13内可能产生结露。另外,如果从半导体基板12到盖基板14的距离短,则产生摄像特性等光学性问题。为了改善上述双方,通过在盖基板14上设置凸部14p,可实现透湿系数高的树脂层的薄层化,抑制结露,并且通过控制盖基板14的凸部14p,可调节从半导体基板12到盖基板14的距离。此时,将半导体基板12和盖基板14的凸部14p接合的间隔体15的高度,理想的是0.5-3μm。另外,从半导体基板12到盖基板14的距离,理想的是10-100μm。
另外,在第2实施方式的制造工序和第3实施方式的制造工序中,通过同样地在盖基板上设置凸部,可获得与上述相同的效果。
并且,在具备了贯通电极和焊料凸块的半导体装置的各个制造工序中也是同样。
产业上应用的可能性
本发明在对形成在半导体基板上的半导体器件进行晶片级封装中,在盖基板上配置滤光器的情况下特别有用。
Claims (7)
1.一种半导体封装组件,其中具有:
半导体器件;
半导体基板,在其一面上配置了上述半导体器件;
盖基板,其一面隔着间隔与上述半导体基板的一面对置;
间隔体,其被配置在上述半导体基板的一面与上述盖基板的一面之间,并将上述半导体基板与上述盖基板接合;和
滤光器,其按照不与上述间隔体重叠而与上述半导体器件重叠的方式设置在上述盖基板上。
2.根据权利要求1所述的半导体封装组件,其中,上述滤光器按照上述半导体基板、上述滤光器、上述盖基板的顺序重叠配置。
3.根据权利要求1所述的半导体封装组件,其中,上述滤光器按照上述半导体基板、上述盖基板、上述滤光器的顺序重叠配置。
4.根据权利要求1所述的半导体封装组件,其中,上述滤光器由第1滤光器和第2滤光器构成,并且按照上述半导体基板、上述第1滤光器、上述盖基板、上述第2滤光器的顺序重叠配置。
5.根据权利要求1所述的半导体封装组件,其中具有:
电极,其位于上述半导体基板的一面侧,并与上述半导体器件电连接;
贯通电极,其从上述半导体基板的另一面侧朝向上述电极设置;和
与上述贯通电极电连接的焊料凸块。
6.一种半导体封装组件的制造方法,用于制造半导体封装组件,该半导体封装组件具有:半导体器件;半导体基板,在其一面上配置了上述半导体器件;盖基板,其一面隔着间隔与上述半导体基板的一面对置;间隔体,其被配置在上述半导体基板的一面与上述盖基板的一面之间,将上述半导体基板与上述盖基板接合;和滤光器,其按照不与上述间隔体重叠而与上述半导体器件重叠的方式设置在上述盖基板上,该半导体封装组件的制造方法包括:
在盖基板上形成多个上述滤光器的第1工序;
将以相互隔着分离部的方式在一面上配置了多个上述半导体器件的半导体基板、与上述多个滤光器的上述盖基板,在上述分离部上隔着间隔体粘接的第2工序;和
把由上述盖基板、上述多个半导体器件、上述半导体基板和上述间隔体构成的构造体,在存在上述间隔体的区域,在上述半导体基板与上述盖基板的重叠方向上进行分断的第3工序。
7.根据权利要求6所述的半导体封装组件的制造方法,其中还包括:
在上述第2工序后,从上述半导体基板的另一面侧朝向上述半导体器件形成电连接的贯通电极的工序;和
形成与上述贯通电极电连接的焊料凸块的工序。
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PCT/JP2008/061773 WO2009005017A1 (ja) | 2007-06-29 | 2008-06-27 | 半導体パッケージおよびその製造方法 |
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CN104684456A (zh) * | 2012-09-24 | 2015-06-03 | 奥林巴斯株式会社 | 摄像装置及具有该摄像装置的内窥镜 |
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CN103201838A (zh) * | 2010-06-14 | 2013-07-10 | 赫普塔冈微光学有限公司 | 制造多个光学设备的方法 |
CN104684456A (zh) * | 2012-09-24 | 2015-06-03 | 奥林巴斯株式会社 | 摄像装置及具有该摄像装置的内窥镜 |
CN107046158A (zh) * | 2015-12-17 | 2017-08-15 | 株式会社藤仓 | 终端装置以及终端方法 |
CN107046158B (zh) * | 2015-12-17 | 2020-06-09 | 株式会社藤仓 | 终端装置以及终端方法 |
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JP2009010261A (ja) | 2009-01-15 |
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EP2164098A4 (en) | 2013-03-13 |
US8330268B2 (en) | 2012-12-11 |
US20100102437A1 (en) | 2010-04-29 |
TW200913239A (en) | 2009-03-16 |
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