CN101668719A - 低损耗铁氧体及使用其的电子零件 - Google Patents
低损耗铁氧体及使用其的电子零件 Download PDFInfo
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- CN101668719A CN101668719A CN200880004069A CN200880004069A CN101668719A CN 101668719 A CN101668719 A CN 101668719A CN 200880004069 A CN200880004069 A CN 200880004069A CN 200880004069 A CN200880004069 A CN 200880004069A CN 101668719 A CN101668719 A CN 101668719A
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Abstract
一种低损耗铁氧体,特征是作为主成分含有47.1~49.3摩尔%的Fe2O3、20~26摩尔%的ZnO、6~14摩尔%的CuO、余量为NiO,而且,对于上述主成分100质量%,以SnO2换算,含有0.1~2质量%的Sn,和以Mn3O4换算,含有0.05~2质量%的Mn,平均晶粒直径为0.5~3μm。
Description
技术领域
本发明是关于可在低温下烧结,即使在应力下,特性在很宽温度范围内变动很小的低损耗铁氧体,以及使用该铁氧体构成电感器的电子零件。
背景技术
各种便携式的电子设备(便携式电话、便携式信息终端PDA、笔记本型的个人计算机、DVD播放器、CD播放器、MD播放器、数码相机、数码视频相机等)。作为将内装电池的电压转换成工作电压的电力转换装置,都具有多个DC/DC转换器。例如,笔记本型的个人计算机中,DC/DC转换器就配置在DSP(Digital SignalProcessor)、MPU(Micro Processing Unit)等的旁边。
作为DC/DC转换器的一个实例,图6示出如下构成的降压型DC/DC转换器,即,将含有输入电容器Cin、输出电容器Cout、输出感应器Lout、及开关元件和控制电路的半导体集成电路IC,作为分立电路配置在印刷基板上,根据来自控制电路的控制信号,使开关元件进行启开和关闭,据此,由输入的直流电压Vin获得以Vout=Ton/(Ton+Toff)×Vin(其中,Ton表示开关元件的启开时间,Toff表示关闭时间。)表示的输出电压Vout。即使输入电压发生变动,通过调整Ton与Toff的比率,仍能获得稳定的输出电压Vout。由进行蓄积和释放电流能量的输出感应器Lout和释放电压能量的输出电容器Cout形成的LC电路,对直流电压进行输出起到了滤波电路(平滑电路)的作用。
作为输出感应器Lout,目前广泛使用的是图8和图9所示在磁心220上缠绕导线230的绕线型输出感应器。就磁心220而言,使用了可直接绕线的Ni-Zn系铁氧体、Ni-Cu-Zn系铁氧体等高电阻的铁氧体。
近年来,构成DSP和LSI(Large Scale Integration),为使电池获得长寿命,而快速降低工作电压。对于像MPU和DSP这种快速工作的零件,可将工作电压从2.5V进而降到1.8V。通过这种降低工作电压,对于DC/DC转换器的输出电压变动,可减少LSI侧的电压容限(margin),而不受噪音的影响。作为其对策,可将DC/DC转换器的开关频率从以前的500KHz提高到1MHz以上,以控制波动。
由于通过开关的高频化降低了输出感应器Lout要求的感应系数,所以能够使感应器小型化,并能使电源电路小型化。然而,开关的高频化,导致在开关元件和感应器上产生损耗,这就成为转换效率降低的原因。由感应器造成的电力损耗,虽然在低频率下能控制导体线路的直流电阻和输出电流,但在高频率下,却不能无视交流电阻(导体线路的交流电阻和铁氧体的铁心损耗core-loss)。因此,为了在超过1MHz的高频率下使进行开关的DC/DC转换器能够有效地工作,必须减少构成感应器的铁氧体的铁心损耗。铁氧体的铁心损耗取决于磁滞损耗、涡电流损耗和残留损耗。已知这些损耗依赖于铁氧体的矫顽磁力、饱和磁化、磁壁共鸣等磁特性,及晶粒直径、比电阻等。
特开2002-289421号公开了一种由46~50摩尔%的Fe2O3、2~13摩尔%的CuO、24~30.5摩尔%的ZnO、3.5摩尔%以下的Mn2O3、及其余为NiO形成,在高饱和磁通密度下,低损耗的Ni-Cu-Zn系铁氧体。这种铁氧体通过添加Mn2O3,可降低150mT磁通密度和50KHz频率时的损耗。然而,该文献中没有公开对减少高频率时的损耗,及由应力导致特性恶化和温度特性变化的对策。虽然该文献记载了可含有B、C、Al、Si、P、S、Cl、As、Se、Br、Te、I和Li、Na、Mg、Al、K、Ca、Ga、Ge、Sr、Cd、In、Sn、Sb、Ba、Tl、Pb、Bi等典型金属元素、Sc、Ti、V、Cr、Co、Y、Zr、Nb、Mo、Pd、Ag、Hf、Ta、W等过渡金属元素等不可避免的杂质。但是,作为副成分,关于复合添加Mn和Sn,却完全没有记载。
感应器也要求对应力的稳定性(对应力感应系数变动要小,损耗的增加要少的性质)。就应力而言,有与印刷基板的线性膨胀系数差异产生的应力、由印刷基板变形产生的应力、在用树脂封闭感应器时模树脂硬化生成的应力、在层叠感应器时,内部导体与铁氧体同时烧结时收缩差异产生的应力、由外部端子的镀膜产生的应力等。由于DC/DC转换器暴露于半导体集成电路IC等产生的热场中,在这种情况下使用的感应器,也要求在使用温度下能发挥稳定的特性,即,感应系数相对温度的变动要小。
作为改善了对应力稳定性和温度特性的铁氧体,特开平05-326243号公开了一种Ni-Cu-Zn系铁氧体,即,相对于由46.5~49.5摩尔%的Fe2O3、5.0~12.0摩尔%的CuO、2.0~30.0摩尔%的ZnO、及余量为NiO形成的主成分100质量%,添加由0.05~0.6质量%的Co3O4、0.5~2质量%的Bi2O3、及合计为0.1~2质量%的SiO2和SnO2形成的副成分。然而,这种Ni-Cu-Zn系铁氧体虽含有SnO2,但不含有Mn(Mn2O3)。因此没能通过复合添加Mn和Sn来降低高频率下的损耗,以及对应力的稳定性和温度特性也没能得到改进。由于含有多达0.5~2质量%的熔点为820℃的Bi2O3,所以促进了晶体的成长,形成平均晶粒直径超过5μm的结晶组织,从而增大了高频率下的铁心损耗。
发明内容
因此,本发明的目的是提供一种能在低于Ag熔点温度下烧结的,在2MHz以上的高频率下损耗低的,即使在应力存在下,仍能在很宽的温度范围内特性变动小的低损耗铁氧体,以及使用这种低损耗铁氧体的电子零件。
本发明的低损耗铁氧体,其特征是,作为主成分含有47.1~49.3摩尔%的Fe2O3、20~26摩尔%的ZnO、6~14摩尔%的CuO、及余量为NiO,而且对于上述主成分100质量%,以SnO2换算含有0.1~2质量%的Sn、及以Mn3O4换算含有0.05~2质量%的Mn,平均晶粒直径为0.5~3μm。
本发明的低损耗铁氧体,在2MHz频率和33mT工作磁通密度Bm下,优选具有2700kW/m3以下的铁心损耗,在5MHz频率和10mT工作磁通密度Bm下,优选具有430kW/m3以下的铁心损耗,以及在4000A/m的磁场中,优选具有390mT以上的饱和磁通密度Bs。
本发明的第一种电子零件,特征是具有使用了上述低损耗铁氧体的磁心和缠绕在该磁心上的线圈。
本发明的第二种电子零件,特征是具有:由使用上述低损耗铁氧体的多个铁氧体层构成的一体烧结的层叠体,和设置在上述层叠体内部的由含有Ag的电极构成的线圈。这种电子零件最好封装含有开关元件的半导体元件、电容器元件和电阻元件,优选至少上述半导体元件封装在设在上述层叠体表面的电极上。
本发明的低损耗铁氧体可在低于Ag的熔点的960℃以下烧结,即使在2MHz以上的高频率下损耗也很低,而且,即使在应力和较大直流叠加电流作用的环境中,特性在很宽的温度范围内变动也很小。因此,本发明的低损耗铁氧体最适宜内装层叠感应器和线圈的层叠基板等电子零件。
附图说明
图1是使用了本发明低损耗铁氧体的层叠感应器立体图。
图2是关于不同Sn量的低损耗铁氧体样品,感应系数受应力影响的变化率的曲线图。
图3是关于不同Sn量的低损耗铁氧体样品,铁心损耗受应力影响的变化率的曲线图。
图4是关于不同Mn量的低损耗铁氧体样品,感应系数受应力影响的变化率的曲线图。
图5是关于不同Mn量的低损耗铁氧体样品,铁心损耗受应力影响的变化率的曲线图。
图6是DC/DC转换器的等效电路图。
图7是使用了本发明低损耗铁氧体的DC/DC转换器立体图。
图8是一侧具有铁氧体磁心的感应器截面图。
图9是图8感应器的立体图。
具体实施方式
[1]低损耗铁氧体
(A)组成
(1)主成分
本发明的低损耗铁氧体(Ni-Cu-Zn系铁氧体),作为主成分,含有47.1~49.3摩尔%的Fe2O3、20~26摩尔%的ZnO、6~14摩尔%的CuO、及余量为NiO。
Fe2O3少于47.1摩尔%时,2MHz和5MHz时的铁心损耗Pcv大,另外,得不到充分的导磁率。另一方面,Fe2O3超过49.3摩尔%时,在低于Ag的熔点的960℃以下的温度,不能充分烧结,磁特性和机械强度低。Fe2O3含量优选为47.5~49.0摩尔%。
ZnO少于20摩尔%时,在2MHz频率和33mT的工作磁通密度下的铁心损耗大,导磁率低。而ZnO超过26摩尔%时,在5MHz频率和10mT的工作磁通密度下的铁心损耗大。所以,ZnO的含量优选为21~26摩尔%。
CuO少于6摩尔%,或超过14摩尔%时,饱和磁通密度Bs低,不足390mT。饱和磁通密度Bs减少,会导致直流叠加特性恶化,不为优选。另外,虽然CuO有助于降低烧结温度,但少于6摩尔%时,烧结密度也会变得不充分。CuO的含量优选为7~11摩尔%。
NiO的量是主成分的余量。为了即要得到所要求的导磁率,又要获得很高的饱和磁通密度Bs,优选NiO/CuO的摩尔比为1.0~3.1。
(2)副成分
本发明的低损耗铁氧体,作为副成分,相对于主成分100质量%,以SnO2换算含有0.1~2质量%的Sn,以Mn3O4换算含有0.05~2质量%的Mn。
通过添加Sn,可降低铁氧体的饱和磁通密度Bs,并增加矫顽磁力Hc。Sn以稳定的4价离子固溶在晶粒内,通过减少晶格应变,以减小饱和磁致伸缩常数λs和磁各向异性常数K1,而且抑制感应系数受应力影响的变化和铁心损耗的增加。随着温度的上升,虽然减少了饱和磁通密度Bs和磁各向异性常数K1,但通过以SnO2换算添加2质量%以下的Sn,可调整使用温度下的饱和磁通密度Bs和磁各向异性常数K1,而且能够降低初导磁率μi受温度影响的变化。SnO2的量超过2质量%时,其一部分进入晶界阻碍烧结,在960℃以下不能提高烧结密度,导磁率等磁特性恶化。由此,在与Ag电极等进行一体烧结的层叠零件中不为优选。当SnO2的量少于0.05质量%时,得不到充分添加SnO2的效果。Sn的优选添加量,以SnO2换算为0.25~2质量%。
本发明的低损耗铁氧体,以Mn3O4换算含有0.05~2质量%的Mn。通过添加Mn,可减少晶格应变,增加初导磁率μi,改进BH回线的线形性,降低局部磁滞回线中的矫顽磁力Hc,减少磁滞损耗。由于Mn抑制在Fe3+和Fe2+间的电子移动,所以增加了比电阻ρ,减少了涡电流损耗。但是,由于添加Mn3O4,使铁心损耗Pcv和感应系数受应力影响的特性趋向于恶化。因此Mn3O4的添加量优选为0.1~1.5质量%。
所添加的Mn的一部分会发生价态变化,消除添加Sn而导致初导磁率μi的降低和矫顽磁力Hc的增加。因此,通过复合添加Sn和Mn,可得到既具有优良抗应力稳定性的,又能显著降低损耗的铁氧体。
(3)其他成分
本发明的低损耗铁氧体,以CaO换算含有1.5质量%以下的Ca,以SiO2换算含有1.5质量%以下的Si。都可抑制晶粒的成长,但又会导致导磁率降低和比电阻增大。由于添加Sn,而缓解了烧结性的降低,所以也可以以Bi2O3换算,含有0.3质量%以下的Bi。
在铁氧体的原料中,不可避免地还含有Na、S、Cl、P、W、B等杂质,优选尽可能地减少,在工业上允许的范围内,总体在0.05质量%以下。尤其是,使Cl低于5ppm,使P低于8ppm时,有利于降低磁损耗。
主成分和副成分可使用荧光X射线分析和ICP发光光谱分析进行定量。首先利用荧光X射线分析对所含元素进行定性分析,接着利用与标准样品进行比较的测量线法对所含元素进行定量。
(B)组织及特性
本发明的低损耗铁氧体具有0.5~3μm的平均晶粒直径。平均晶粒直径在3μm以下时,可降低涡电流损耗,降低因磁畴壁减少而造成的残留损耗,并能降低高频率下的铁心损耗。然而,平均晶粒直径小于0.5μm时,晶界作为磁畴壁的固定(pinning)点发挥作用,所以很容易发生导磁率降低和铁心损耗增加。当平均晶粒直径超过3μm时,会增大涡电流损耗和残留损耗的影响,在高频率(例如5MHz)下的损耗更加显著增加。
为了使平均晶粒直径在3μm以下,优选将供于烧结的铁氧体预烧粉末的BET比表面积取为5~10m2/g。由于BET比表面积越大,也就越能提高反应活性,所以在低烧结温度下,就能促进致密化。铁氧体预烧粉末的BET比表面积为5~10m2/g时,即使在960℃以下的烧结温度下,也能获得晶粒直径小,且均匀致密的铁氧体。
当铁氧体预烧粉末的BET比表面积小于5m2/g时,铁氧体烧结体的平均晶粒直径有时超过3μm。当BET比表面积超过10m2/g时,铁氧体的预烧粉末很容易凝聚,另外,铁氧体的预烧粉末表面也容易吸附水分。因此,将聚乙烯丁缩醛等水溶性树脂作为粘合剂制成浆液时,很容易形成凝聚构造,所得基片上存在大量的空隙,这些空隙成为水分进入电子零件内部的通道。所以,铁氧体的预烧粉末BET比表面积优选为5.5~8m2/g。
铁氧体的初导磁率μi可用下式定义:
μi∝Bs2/(aK1+bλsσ)
(其中,Bs为饱和磁通密度、K1为磁各向异性常数、λs为磁致伸缩常数、σ为应力、a和b为常数。)
由于Ni-Cu-Zn系铁氧体具有负磁致伸缩常数,所以初导磁率μi随压缩应力而增加,达到最大值后进行减少。为改进直流叠加特性,在磁电路中设置了磁隙(magnet gap)的感应器,由于有效导磁率会降低,所以导磁率优选在150以上。
[2]电子零件
图1作为使用了本发明低损耗铁氧体的电子零件,示出了内部具有线圈(感应器)的层叠感应器。该层叠感应器10可按如下制作,即,利用刮刀片法等,由低损耗铁氧体形成基片,再用Ag或其合金等导体糊在该片上形成线圈图案3,进而根据需要印刷上铁氧体糊和非磁性糊后进行层叠再进行一体烧结,并在露出导体图案的层叠体2侧面上形成外部端子200a、200b。
作为电子零件的另一实例,图7示出了如下结构的DC/DC转换器模块,即,将半导体集成电路零件IC和电容器Cin、Cout封装在安装电极上,该安装电极设置在内装感应器的层叠基板10表面上,与感应器形成电连接。也可以形成如下模块,即,将感应器和半导体集成电路零件IC封装在内装电容器的层叠基板上。无需多说,只要在没超出本发明技术构思的范围内,除这些外,还可构成各种形态。
以下根据实施例更详细地说明本发明,但本发明不受这些实例所限定。
实施例1
将主成分Fe2O3、ZnO、CuO和NiO,及副成分SnO2和Mn3O4按照表1和表2中所示比率进行湿式混合后,干燥,在800℃下预烧2小时。将得到的预烧粉末与离子交换水一起装入球磨机内,进行约20小时粉碎,直到BET比表面积达到6.5m2/g。再向预烧粉末中加入聚乙烯醇,利用喷雾式干燥机法形成颗粒后,在表1和表2中所示875~950℃的温度范围内,在大气中烧结2小时,制成外径8mm、内径4mm、及厚度2mm的环状样品,和外尺寸8mm×8mm、内尺寸4mm×4mm、厚度2mm的方形环状样品。
[表1]
[表2]
注:*本发明范围外的试料
利用下述方法分别测定各样品的密度、平均晶粒直径、初导磁率μi、饱和磁通密度Bs、残留磁通密度Br、矫顽磁力Hc、电阻率、铁心损耗Pcv、及初导磁率μi的相对温度系数αμir。测定结果示于表3和表4。
(1)密度
根据环状样品的尺寸和重量计算出密度。
(2)平均晶粒直径
在环状样品的电子显微镜照片(10000倍)上,画出任意长度L1的直线,计量出存在于该直线上的粒子数N1,用粒子数N1除以长度L1,计算出L1/N1的值。对数条直线求出的L1/N1值进行平均,作为平均晶粒直径。
(3)初导磁率μi
将7圈铜线缠绕在环状样品上制成感应器,用LCR计量表测定1MHz频率和1mA电流下的感应系数L,并用下式计算出初导磁率μi。
μi=(le×L)/(μo×Ae×N2)
(其中,le是磁路长、L是感应系数、μo是真空的导磁率=4π×10-7(H/m)、Ae是样品的截面积、N是线圈的圈数。)
(4)初导磁率μi的相对系数αμir
初导磁率μi的相对温度系数αμir可用下述式表示。
αμir=[(μi2-μi1)/μi1 2]/(T2-T1)
(其中,T1和T2是测定温度、μi1是温度T1下的初导磁率、μi2是温度T2下的初导磁率。)
对电子恒温槽内调整到-40℃~+80℃的各个样品测定初导磁率μi。-40℃~+20℃的相对温度系数αμir,情况是T1=+20℃、T2=40℃,μi1是+20℃下的初导磁率,μi2是-40℃下的初导磁率。而+20℃~+80℃的相对温度系数αμir,情况是T1=+20℃、T2=+80℃,μi1是+20℃下的初导磁率,μi2是+80℃下的初导磁率。
(5)饱和磁通密度Bs
利用B-H分析器,在4000A/m的磁场中,以10KHz频率求出各个环状样品的磁滞主回路(hystersis major loop),由该磁滞回线测出饱和磁通密度Bs。
(6)残留磁通密度Br
由上述磁滞回线测出残留磁通密度Br。
(7)保磁率Hc
由上述磁滞回线测出矫顽磁力Hc。
(8)电阻率
将环状样品分割成2份,在切割面上涂布导电树脂,通过干燥得到试验片,用绝缘电阻计,以50V直流电压测量试验片的电阻率。
(9)铁心损耗Pcv在环状样品上,输入侧和输出侧都缠绕上7圈铜线,於室温(25℃)下,按照100KHz和50mT、2MHz和23mT、及5MHz和10mT条件,测定Pcv。
[表3]
No. | 密度(g/cm3) | Dav(1)(μm) | μi(2) | Bs(3)(mT) | Br(4)(mT) | Hc(5)(A/m) |
*1 | 5.2 | 0.8 | 165 | 404 | 217 | 330 |
2 | 5.3 | 0.9 | 221 | 413 | 247 | 280 |
3 | 5.2 | 1.2 | 191 | 407 | 207 | 280 |
4 | 5.3 | 1.4 | 204 | 423 | 207 | 269 |
*5 | 5.2 | 异常烧结 | 216 | 414 | 213 | 201 |
*6 | 5.2 | 异常烧结 | 262 | 424 | 182 | 131 |
7 | 5.2 | 0.9 | 218 | 411 | 252 | 272 |
8 | 5.2 | 1.1 | 235 | 416 | 259 | 251 |
9 | 5.2 | 1.0 | 250 | 422 | 272 | 236 |
*10 | 4.6 | 0.4 | 95 | 325 | 222 | 508 |
*11 | 5.3 | - | 239 | 436 | 289 | 243 |
*12 | 5.3 | 15.0 | 306 | 436 | 229 | 113 |
*13 | 5.3 | 1.9 | 297 | 448 | 303 | 183 |
*14 | 5.1 | 1.0 | 152 | 417 | 268 | 331 |
15 | 5.1 | 1.0 | 181 | 420 | 266 | 293 |
16 | 5.2 | 1.1 | 195 | 423 | 269 | 297 |
17 | 5.2 | 0.9 | 213 | 419 | 263 | 276 |
18 | 5.2 | 1.1 | 235 | 416 | 259 | 251 |
19 | 5.2 | 1.2 | 279 | 409 | 241 | 213 |
20 | 5.2 | 0.9 | 229 | 408 | 232 | 253 |
21 | 5.2 | 1.3 | 297 | 406 | 238 | 199 |
*22 | 5.2 | 1.2 | 340 | 381 | 213 | 167 |
*23 | 5.3 | - | 383 | 351 | 197 | 140 |
*24 | 5.3 | - | 385 | 334 | 178 | 132 |
*25 | 5.3 | 1.4 | 411 | 310 | 162 | 114 |
表3(续)
[表4]
No. | 密度(g/cm3) | Dav(1)(μm) | μi(2) | Bs(3)(mT) | Br(4)(mT) | Hc(5)(A/m) |
26 | 5.2 | - | 286 | 416 | 253 | 210 |
27 | 5.1 | 1.1 | 271 | 405 | 249 | 212 |
28 | 5.1 | 1.1 | 216 | 397 | 281 | 232 |
*29 | 4.9 | 1.0 | 145 | 365 | 262 | 316 |
*30 | 5.1 | 0.6 | 158 | 374 | 235 | 476 |
31 | 5.2 | 0.9 | 172 | 410 | 223 | 329 |
32 | 5.2 | 0.9 | 199 | 401 | 235 | 291 |
33 | 5.2 | 1.1 | 212 | 400 | 240 | 281 |
34 | 5.2 | 1.0 | 217 | 399 | 243 | 282 |
*35 | 5.1 | 1.0 | 202 | 382 | 238 | 291 |
*36 | 5.2 | 1.1 | 250 | 427 | 257 | 198 |
37 | 5.3 | 1.0 | 243 | 422 | 257 | 223 |
38 | 5.3 | 1.1 | 190 | 412 | 239 | 318 |
39 | 5.3 | 0.9 | 166 | 401 | 230 | 361 |
*40 | 4.5 | 0.4 | 49 | 249 | 136 | 827 |
*41 | 5.3 | 0.9 | 215 | 415 | - | - |
42 | 5.3 | 1.2 | 241 | 416 | 244 | 247 |
43 | 5.2 | 0.6 | 176 | 393 | 255 | 304 |
44 | 5.3 | 1.0 | 242 | 412 | 245 | 235 |
45 | 5.3 | 2.6 | 275 | 425 | 242 | 201 |
46 | 5.2 | 1.2 | 246 | 412 | 248 | 224 |
47 | 5.3 | 1.1 | 251 | 418 | 253 | 211 |
*48 | 5.3 | 1.9 | 262 | 420 | 280 | 177 |
表4(续)
注:(1)平均晶粒直径(μm)
(2)初导磁率μi
(3)饱和磁通密度s(mT)
(4)残留磁通密度Br(mT)
(5)矫顽磁力Hc(A/m)
(6)铁心损耗Pcv(KW/m3)
(7)初导磁率μi的相对温度系数αμir
Fe2O3为47摩尔%的样品1具有大的矫顽磁力Hc和铁心损耗Pcv,而Fe2O3为49.5摩尔%的样品10具有低的烧结密度和较大的铁心损耗Pcv,磁特性显著低劣。不含副成分的样品11,在高频率下具有大的铁心损耗Pcv。取代副成分含有Bi2O3的样品12具有大的平均晶粒直径,铁心损耗Pcv显著低劣。含有Sn和Mn,及0.5质量%Bi2O3的样品5和6,由粒径30μm的结晶粒和1μm的结晶粒形成混合存在的结晶组织,呈现出异常烧结状态,在5MHz频率下的铁心损耗相当低劣。
当增加ZnO量减少NiO量时,可降低饱和磁通密度Bs、残留磁通密度Br和矫顽磁力Hc,而增加初导磁率μI。在2MHz下,通过增加ZnO减少了铁心损耗Pcv,但在5MHz下,ZnO为23摩尔%的样品17,铁心损耗Pcv小,即使增加或减少ZnO的量,铁心损耗Pcv都会增加。
当置换Ni的一部分的Cu的量少时,烧结性低劣,初导磁率μi和饱和磁通密度Bs降低,矫顽磁力Hc和铁心损耗Pcv增加。当Cu的量大时,饱和磁通密度Bs会降低。
不含Sn的样品36具有大的铁心损耗Pcv,含有3.0质量%Sn的样品40烧结不足,具有显著低劣的磁特性和很大的铁心损耗。当增加SnO量时,相对温度系数αμir会降低,当超过1质量%时,相对温度系数αμir变成负值。由此可知通过含有适量的SnO可减小感应系数的温度变化。另外,通过添加Mn减小铁心损耗,增加电阻率。与Sn的情况不同,随着Mn量增加,相对温度系数αμir而增加。
在方形环状样品2、13、36、37、39、44、47和48上缠绕12圈铜线,放置在具有张力计的加压夹具上,室温下沿轴向施加压缩力,连续测定1MHz频率和1mA电流下的感应系数,和2MHn频率和33mT工作磁通密度Bm下的铁心损耗。由此根据下式算出感应系数和铁心损耗的变化率,评价它们对应力的稳定性,结果示于图2~5。
(1)感应系数的变化率
(L1-L0)L0×100(%)
L1:沿一轴向压缩时的感应系数
L0:沿一轴向未压缩时的感应系数
(2)铁心损耗的变化率
(Pcv1-Pcv0)/Pcv0×100(%)
Pcv1:沿轴向压缩时,在2MHz和33mT下的铁心损耗
Pcv0:沿轴向未压缩时,在2MHz和33mT下的铁心损耗
关于不同Sn量的样品2、13、36、37和39,图2示出了感应系数对应力的稳定性,图3示出了铁心损耗对应力的稳定性。随着增大Sn量,感应系数和铁心损耗对应力的变化率而降低。
关于不同Mn量的样品2、44、47和48,图4示出了感应系数对应力的稳定性,图5示出了铁心损耗对应力的稳定性。随着增大Mn量,感应系数和铁心损耗对应力的变化率也增加。Mn2O3为2.1质量%样品中,结果是对应力的稳定性,比未添加Sn时,更加恶劣。
实施例2
将样品2、13的各铁氧体粉末与以聚乙烯丁缩醛为主成分的粘合剂及乙醇一起放入球磨机内进行粉碎,调整所得浆液的粘度后,用刮刀片法涂布在聚酯膜上,制成干燥厚度为30μm的基片。在各个铁氧体的基片上,用Ag糊形成多个线圈状的导体图案。进而根据需要,印刷上铁氧体糊和非磁性糊。将具有导体图案的多个基片压合成层叠体,并将该层叠体切割成烧结后尺寸为3.2mm×1.6mm×1.0mm的予制品,脱除粘合剂后,在大气中,在900℃烧结3小时。在暴露导体图案的侧面上涂布Ag糊,通过在600℃烧结,形成外部端子200a、200b。这样制作成在层叠体2中内装线圈3的层叠感应器10,图1示出其外观。
将层叠感应器10组装到具有2MHz开关频率fs、3.6V输入电压Vin和1.5V输出电压Vout,图6所示的降压型DC/DC转换器中,测定DC/DC转换效率。样品2的转换效率比样品13高为1%左右。由于样品2损耗低,同时对应力的Pcv变化率非常小,所以认为DC/DC转换效率高。
权利要求书(按照条约第19条的修改)
1.一种低损耗铁氧体,其特征是,相对于由47.1~49.3摩尔%的Fe2O3、20~26摩尔%的ZnO、6~14摩尔%的CuO及余量为NiO构成的主成分100质量%,含有以SnO2换算为0.1~2质量%的Sn、和以Mn3O4换算为0.05~2质量%的Mn,平均晶粒直径为0.5~3μm。
2.根据权利要求1所述的低损耗铁氧体,其特征是,在2MHz的频率和33mT的工作磁通密度Bm下,铁心损耗为2700kW/m3以下,在5MHz的频率和10mT的工作磁通密度Bm下,铁心损耗为430kW/m3以下,在4000A/m的磁场中的饱和磁通密度为390mT以上。
3.一种电子零件,其特征是,具有:使用了权利要求1或2所述的低损耗铁氧体的磁心;和缠绕在该磁心上的线圈。
4.一种电子零件,其特征是,具有:由使用了权利要求1或2所述的低损耗铁氧体的多个铁氧体层构成的一体烧结的层叠体;和设置在上述层叠体的内部的由含Ag的电极构成的线圈。
5.根据权利要求4所述的电子零件,其特征是,封装有含开关元件的半导体元件、电容器元件和电阻元件,至少上述半导体元件封装在设置在上述层叠体表面上的电极上。
(1)权利要求第1项将本发明低损耗铁氧体的“主成分”的组成限定为“Fe2O3”、“ZnO”、“CuO”以及“NiO”。
Claims (5)
1.一种低损耗铁氧体,其特征是,作为主成分,含有47.1~49.3摩尔%的Fe2O3、20~26摩尔%的ZnO、6~14摩尔%的CuO及余量为NiO,而且,相对于上述主成分100质量%,含有以SnO2换算为0.1~2质量%的Sn、和以Mn3O4换算为0.05~2质量%的Mn,平均晶粒直径为0.5~3μm。
2.根据权利要求1所述的低损耗铁氧体,其特征是,在2MHz的频率和33mT的工作磁通密度Bm下,铁心损耗为2700kW/m3以下,在5MHz的频率和10mT的工作磁通密度Bm下,铁心损耗为430kW/m3以下,在4000A/m的磁场中的饱和磁通密度为390mT以上。
3.一种电子零件,其特征是,具有:使用了权利要求1或2所述的低损耗铁氧体的磁心;和缠绕在该磁心上的线圈。
4.一种电子零件,其特征是,具有:由使用了权利要求1或2所述的低损耗铁氧体的多个铁氧体层构成的一体烧结的层叠体;和设置在上述层叠体的内部的由含Ag的电极构成的线圈。
5.根据权利要求4所述的电子零件,其特征是,封装有含开关元件的半导体元件、电容器元件和电阻元件,至少上述半导体元件封装在设置在上述层叠体表面上的电极上。
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CN103515043A (zh) * | 2012-06-28 | 2014-01-15 | 比亚迪股份有限公司 | 一种软磁材料及其制备方法 |
CN105097169A (zh) * | 2014-05-15 | 2015-11-25 | Tdk株式会社 | 铁氧体磁芯、电子部件以及电源装置 |
TWI751302B (zh) * | 2017-03-15 | 2022-01-01 | 日商日立金屬股份有限公司 | 鎳系鐵氧體燒結體、線圈零件、及鎳系鐵氧體燒結體的製造方法 |
CN115108821A (zh) * | 2021-03-19 | 2022-09-27 | 日立金属株式会社 | NiZn系铁氧体 |
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US8237529B2 (en) | 2012-08-07 |
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