JP4573065B2 - 電子部品 - Google Patents
電子部品 Download PDFInfo
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- JP4573065B2 JP4573065B2 JP2010051176A JP2010051176A JP4573065B2 JP 4573065 B2 JP4573065 B2 JP 4573065B2 JP 2010051176 A JP2010051176 A JP 2010051176A JP 2010051176 A JP2010051176 A JP 2010051176A JP 4573065 B2 JP4573065 B2 JP 4573065B2
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- ferrite
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- 229910000859 α-Fe Inorganic materials 0.000 claims description 57
- 239000013078 crystal Substances 0.000 claims description 21
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 230000035699 permeability Effects 0.000 description 29
- 230000004907 flux Effects 0.000 description 24
- 230000008859 change Effects 0.000 description 12
- 238000005245 sintering Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 7
- 229910017518 Cu Zn Inorganic materials 0.000 description 6
- 229910017752 Cu-Zn Inorganic materials 0.000 description 6
- 229910017943 Cu—Zn Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
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- H01F41/041—Printed circuit coils
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Description
(A) 組成
(1) 主成分
本発明の電子部品に用いる低損失フェライト(Ni-Cu-Zn系フェライト)は、主成分として47.1〜49.3 mol %のFe2O3、20〜26 mol %のZnO、6〜14 mol %のCuO、及び残部NiOを含有する。
本発明の電子部品に用いる低損失フェライトは、主成分100質量%に対して、副成分として、SnO2換算で0.1〜2質量%のSn、及びMn3O4換算で0.05〜1.1質量%のMnを含有する。
本発明の電子部品に用いる低損失フェライトは、更にCaをCaO換算で1.5質量%以下、SiをSiO2換算で1.5質量%以下含有しても良い。それぞれ結晶粒の成長を抑制し、透磁率の低下及び比抵抗の増大をもたらす。またSn添加による焼結性の低下を緩和するため、BiをBi2O3換算で0.3質量%以下含有しても良い。
本発明の電子部品に用いる低損失フェライトは、0.5〜3μmの平均結晶粒径を有する。平均結晶粒径が3μm以下であると、渦電流損失が低減し、磁壁の減少から残留損失が低減し、高周波数でのコアロスが低下する。しかし、平均結晶粒径が0.5μm未満であると、粒界が磁壁のピンニング点として作用し、透磁率の低下及びコアロスの増加が生じ易くなる。平均結晶粒径が3μmを超えると、渦電流損失や残留損失の影響が大きくなり、高周波(例えば5 MHz)での損失の増加が顕著となる。
μi∝Bs2/(aK1+bλsσ)
(ただしBsは飽和磁束密度であり、K1は磁気異方性定数であり、λsは磁歪定数であり、σは応力であり、a及びbは定数である。)
により定義される。Ni-Cu-Zn系フェライトは負の磁歪定数を有するため、初透磁率μiは圧縮応力に応じて増加し、極大値を経て減少する。直流重畳特性を改善するため磁気回路中に磁気ギャップを設けたインダクタの場合、実効透磁率が低下するので、150以上の透磁率が好ましい。
図1は、低損失フェライトを用いた本発明の電子部品として、内部にコイル(インダクタ)を備えた積層インダクタを示す。この積層インダクタ10は、低損失フェライトからドクターブレード法等によりグリーンシートを形成し、これにAg又はその合金等の導体ペーストでコイルパターン3を形成し、さらに必要に応じてフェライトペースト及び非磁性ペーストを印刷した後積層し、一体的に焼結し、導体パターンが露出した積層体2の側面に外部端子200a,200bを形成することにより作製することができる。
Fe2O3、ZnO、CuO及びNiOの主成分、及びSnO2及びMn3O4の副成分を表1及び2に示す割合で湿式混合した後、乾燥し、800℃で2時間仮焼した。得られた仮焼粉をイオン交換水とともにボールミルに投入し、BET比表面積が6.5 m2/gとなるまで約20時間粉砕した。仮焼粉にポリビニルアルコールを加えてスプレードライヤー法により顆粒化した後成形し、表1及び2に示す875〜950℃の範囲内の温度で2時間大気中焼結し、外径8 mm、内径4 mm及び厚さ2 mmのリング状サンプルと、外寸が8 mm×8 mm、内寸が4 mm×4 mm、厚さが2 mmの角型環状サンプルを作製した。
リング状サンプルの寸法及び重量から、密度を算出した。
リング状サンプルの電子顕微鏡写真(10,000倍)に任意の長さL1の直線を引き、この直線上に存在する粒子の数N1計測し、長さL1を粒子数N1で除した値L1/N1を算出した。L1/N1を複数の直線について求めて平均し、平均結晶粒径とした。
リング状サンプルに7ターンの銅線を巻いてインダクタを作製し、LCRメーターを用いて1 MHzの周波数及び1 mAの電流でインダクタンスLを測定し、下記式により初透磁率μiを算出した。
μi=(le×L)/(μ0×Ae×N2)
(ただしleは磁路長であり、Lはインダクタンスであり、μ0は真空の透磁率=4π×10-7(H/m)であり、Aeはサンプルの断面積であり、Nはコイルの巻数である。)
初透磁率μiの相対温度係数αμirは下記式により表される。
αμir=〔(μi2−μi1)/μi1 2〕/(T2−T1)
(ただし、T1及びT2は測定温度であり、μi1は温度T1における初透磁率であり、μi2は温度T2における初透磁率である。)
電子恒温槽で−40℃〜+80℃に調整した各サンプルに対して、初透磁率μiを測定した。−40℃〜+20℃の相対温度係数αμirの場合、T1=+20℃であり、T2=−40℃であり、μi1は+20℃における初透磁率であり、μi2は−40℃における初透磁率である。また+20℃〜+80℃の相対温度係数αμirの場合、T1=+20℃であり、T2=+80℃であり、μi1は+20℃における初透磁率であり、μi2は+80℃における初透磁率である。
B-Hアナライザにより、4000 A/mの磁場中で10 kHzの周波数で各リング状サンプルのヒステリシスのメジャーループを求めた。このヒステリシスループから飽和磁束密度Bsを測定した。
上記ヒステリシスループから残留磁束密度Brを測定した。
上記ヒステリシスループから保磁力Hcを測定した。
リング状サンプルを2分割し、切断面に導電性樹脂を塗布し、乾燥させることにより得た試験片に対して、絶縁抵抗計により直流電圧 50 Vで抵抗率を測定した。
リング状サンプルに一次側及び二次側とも7ターンの銅線を巻き、室温(25℃)で、100 kHz及び50 mTの条件、2 MHz及び33 mTの条件、及び5 MHz及び10 mTの条件でPcvを測定した。
(2) 初透磁率μi。
(3) 飽和磁束密度Bs(mT)。
(4) 残留磁束密度Br(mT)。
(5) 保磁力Hc(A/m)。
(6) コアロスPcv(kW/m3)。
(7) 初透磁率μiの相対温度係数αμir。
(L1−L0)/L0×100(%)
L1:一軸方向に圧縮した時のインダクタンス。
L0:一軸に圧縮しない時のインダクタンス。
(Pcv1−Pcv0)/Pcv0×100(%)
Pcv1:一軸方向に圧縮した時の2 MHz及び33 mTにおけるコアロス。
Pcv0:一軸に圧縮しない時の2 MHz及び33 mTにおけるコアロス。
サンプル2,13の各フェライト粉末を、ポリビニルブチラールを主成分としたバインダー及びエタノールとともにボールミル粉砕し、得られたスラリーの粘度を調整した後、ポリエステルフィルム上にドクターブレード法で塗布し、乾燥厚さが30μmのグリーンシートを作製した。各フェライトグリーンシートにAgペーストで複数のコイル状導体パターンを形成した。さらに必要に応じてフェライトペースト及び非磁性ペーストを印刷した。導体パターンを有する複数のグリーンシートを圧着し、得られた積層体を焼結後の寸法が3.2 mm×1.6 mm×1.0 mmとなるように切断し、脱バインダー後、大気中で900℃で3時間焼結した。導体パターンが露出した側面に、Agペーストを塗布し、600℃で焼き付けることにより外部端子200a、200bを形成した。このようにして積層体2にコイル3を内蔵した積層インダクタ10を作製した。図1はその外観を示す。
Claims (4)
- 複数のフェライト層を備えた積層体の内部にAgを含む電極からなるコイルが設けられた電子部品であって、
前記フェライト層は47.1〜49.3 mol%のFe2O3、20〜26 mol%のZnO、6〜14 mol%のCuO、及び残部NiOからなる主成分100質量%に対して、副成分としてSnO2換算で0.1〜2質量%のSnと、Mn3O4換算で0.05〜1.1質量%のMnとを含み、平均結晶粒径が0.5〜3μmである低損失フェライトで構成されたことを特徴とする電子部品。 - 請求項1に記載の電子部品において、前記低損失フェライトは、副成分としてBi2O3換算で0.3質量%以下(0を含まず)のBiと、CaO換算で1.5質量%以下(0を含まず)のCaと、SiO2換算で1.5質量%以下(0を含まず)のSiとをさらに含むことを特徴とする電子部品。
- 請求項1又は2に記載の電子部品において、前記低損失フェライトの−40℃〜+20℃の相対温度係数αμirの絶対値が9.2 ppm以下であることを特徴とする電子部品。
- 請求項1〜3のいずれかに記載の電子部品において、前記積層体に半導体集積回路部品が実装され、前記半導体集積回路部品は前記コイルと接続しており、もってDC/DCコンバータとして用いられることを特徴とする電子部品。
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JPH0661033A (ja) * | 1992-08-06 | 1994-03-04 | Murata Mfg Co Ltd | 低損失酸化物磁性材料 |
JPH097816A (ja) * | 1995-06-22 | 1997-01-10 | Samsung Corning Co Ltd | Ni−Cu−Zn系酸化物磁性材料 |
JP2002198212A (ja) * | 2000-12-27 | 2002-07-12 | Fdk Corp | 低損失酸化物磁性材料 |
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EP2112126A1 (en) | 2009-10-28 |
JP2010180125A (ja) | 2010-08-19 |
JP2011018913A (ja) | 2011-01-27 |
CN101668719B (zh) | 2013-01-02 |
US8237529B2 (en) | 2012-08-07 |
KR20090115938A (ko) | 2009-11-10 |
US20100321140A1 (en) | 2010-12-23 |
CN101668719A (zh) | 2010-03-10 |
JP5126316B2 (ja) | 2013-01-23 |
JP4914448B2 (ja) | 2012-04-11 |
EP2112126B1 (en) | 2013-10-16 |
EP2112126A4 (en) | 2011-11-30 |
JPWO2008096795A1 (ja) | 2010-05-27 |
WO2008096795A1 (ja) | 2008-08-14 |
KR101429207B1 (ko) | 2014-08-14 |
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