CN101632163B - 用于湿法清洗设备的混合复合材料晶片托架 - Google Patents

用于湿法清洗设备的混合复合材料晶片托架 Download PDF

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CN101632163B
CN101632163B CN2007800516545A CN200780051654A CN101632163B CN 101632163 B CN101632163 B CN 101632163B CN 2007800516545 A CN2007800516545 A CN 2007800516545A CN 200780051654 A CN200780051654 A CN 200780051654A CN 101632163 B CN101632163 B CN 101632163B
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郑荣柳
阿诺德·霍洛坚科
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Abstract

本发明描述了一种托架结构，其用于在衬底通过将托架穿过由上下接近头形成的弯液面而被处理时支撑该衬底。所述托架包括框架，具有尺寸适合于容纳衬底的开口和用于在开口内支撑衬底的多个支撑销，所述开口略大于衬底，使得衬底与开口之间存在间隙。所述框架包括复合材料芯、顶片、底片、顶片与芯之间的芳族聚酰胺结构层和底片与芯之间的第二芳族聚酰胺结构层。所述顶片和底片由高分子材料形成。还描述了一种制造方法。

Description

用于湿法清洗设备的混合复合材料晶片托架
背景技术
在半导体芯片制造工业中，必须在执行在衬底的表面上留下不希望的残余物的制造操作之后清洗并干燥衬底。此类制造操作的示例包括等离子蚀刻(例如钨回蚀(WEB))和化学机械抛光(CMP)。在CMP中，将衬底放置在推着衬底表面抵靠抛光表面的夹具(holder)中。该抛光表面使用由化学制品和研磨材料组成的浆料。遗憾的是，CMP工艺常常在衬底表面上留下浆料颗粒和残余物组成的堆积物。如果留在衬底上，不希望的残余物和颗粒可以导致缺陷。在某些情况下，此类缺陷可以使得衬底上的器件变得不可用。在制造操作之后清洗衬底去除不希望的残余物和颗粒并防止此类缺陷发生。
在已湿法清洗衬底之后，必须有效地干燥衬底以防止水或清洗流体(下文中的“流体”)残余在衬底上留下残余物。如果允许衬底表面上的清洗流体蒸发，如形成液滴时通常发生的那样，先前溶于流体中的残余物或污染物将在蒸发之后留在衬底表面上并可能形成斑点。为了防止发生蒸发，必须尽快去除清洗流体而不在衬底表面上形成液滴。为了实现这种目的，采用几种不同的干燥技术之一，诸如旋转干燥、IPA、或马兰葛尼(Marangoni)干燥。所有这些干燥技术利用在衬底表面上的某种形式的移动液体/气体分界面，该液体/气体分界面如果经适当保持，使得衬底表面的干燥而不形成液滴的情况下。遗憾的是，如果该移动液体/气体分界面垮掉(break down)，则如所有上述干燥法常常发生的那样，会形成液滴并发生蒸发，导致污染物留在衬底表面上。
当前的衬底托架不具有用于在清洗和其它处理步骤期间以可以避免在衬底表面上形成液滴的方式传送衬底的属性的期望组合。鉴于前述内容，存在对改进清洗系统和方法的需要，其在降低来自干燥流体液滴的痕迹的可能性的同时提供高效清洗。
发明内容
概括地说，本发明通过提供用于在由衬底处理弯液面(meniscus)的处理期间来支撑晶片的托架结构及其制造方法来满足这些需要。
应认识到，可以以包括诸如工艺、装置、系统、设备或方法的许多方式来实现本发明。下面描述本发明的几个发明实施例。
在一个实施例中，提供了一种托架结构，其用于在衬底通过将该托架穿过由至少一个接近头形成的弯液面而被处理时支撑该衬底。所述托架包括框架，具有尺寸适合于容纳衬底的开口和用于在该开口内支撑该衬底的多个支撑销，所述开口略大于该衬底，使得衬底与该开口之间存在间隙。所述框架包括复合材料芯、顶片、底片、该顶片与该芯之间的芳族聚酰胺结构层以及该底片与该芯之间的第二芳族聚酰胺结构层。所述顶片和所述底片由高分子材料形成。
在另一实施例中，提供了一种制造该托架的方法。该方法包括形成具有碳纤维芯、顶片、底片、该顶片与该芯之间的芳族聚酰胺结构层以及该底片与该芯之间的第二芳族聚酰胺结构层的复合材料框架。所述顶片和所述底片每个由高分子材料形成。该方法还包括形成尺寸适合于容纳衬底的开口，以及提供延伸到该开口中以在该开口内支撑该衬底的多个支撑销。所述开口被形成为略大于该衬底，使得该衬底与该开口之间存在间隙。在又一实施例中，提供了一种制造用于在制备衬底种使用的托架的方法。该方法包括形成包括具有第一侧和第二侧的芯材料的主体、在该主体中形成开口、向该主体施加热固化循环以使残余应力最小化并降低该主体的不平特性(non-flatness characteristics)以及在该热塑材料层的顶面和边缘上施加压力以保证该主体的限制，并加工该主体以形成该托架。该芯材料具有在该芯材料的第一侧和第二侧两者上形成的热塑材料层。该开口的尺寸被确定为容纳该衬底。所述加工被配置为限定该开口的尺度和该托架的外尺寸参数。
通过结合举例示出本发明原理的附图而进行的以下详细说明，本发明的优点将变得显而易见。
附图说明
通过结合附图的以下详细说明，将容易地理解本发明，并且相同的附图标记指示相同的结构元件。
图1A是接近头装置的示例性实现的透视图。
图1B是图1A所示的示例性实现的俯视图。
图2示出上接近头的示意性表示。
图3A、3B、3C和3D说明离开由上下接近头形成的弯液面的衬底。
图4举例示出晶片托架的俯视图。
图5示出图4的晶片托架的透视横截面图。
图6举例示出具有矩形形状的托架的俯视图。
图7举例示出沿图4中的线N-N的托架的横截面图，为了清晰起见而将垂直尺度放大。
图8详细地示出图7的托架横截面的分层结构。
图9示出说明用于制造图4～8的托架的示例性复合材料成型工艺的流程图。
具体实施方式
在以下说明中，为了提供对本发明的透彻理解而阐述许多具体细节。然而，对本领域的技术人言来说显而易见的是可以在没有这些特定细节中的某些的情况下实施本发明。在有的情况中，为了避免不必要地混淆本发明，没有详细描述已知的处理操作和实现。本文所使用的术语“弯液面”指的是被液体的表面张力一定程度上限制和包含的一定体积液体。该弯液面还是可控制的，并可以以被包含的形状在表面上移动。在具体实施例中，通过将流体输送到表面同时还去除流体来保持该弯液面，以便弯液面保持可控。此外，可以由精确流体输送和去除系统来控制弯液面形状，该系统一定程度上可与联网的控制器、计算系统对接(interface)。
图1A是接近头装置100的示例性实现的透视图。图1B以俯视图示出示例性实现。在本示例中，将衬底160设置在托架150内，该托架150包括具有尺寸适合于容纳衬底160的中心开口的框架。在本示例中，托架150沿着箭头166的方向在上接近头110与下接近头120之间通过。在一个实施例中，使用单接近头110(例如在顶部或底部之一)。因此，在接近头110的表面与衬底160的表面和托架150的表面部分之间形成弯液面200。例如，可以将弯液面200限定为至少与衬底160的直径一样宽。在另一示例中，弯液面200略大于衬底160的直径，使得托架150的表面边缘(例如至少围绕衬底的圆周的表面边缘)与弯液面200接触。在所示的示例中，在上下接近头100、120之间形成弯液面。术语“上”和“下”用来限定一个示例，其中该托架150沿着基本水平的方法保持和传送衬底，然而除水平之外的其它取向也是可能的。
可以由用于使托架150沿着箭头166的方向在上下接近头110、120之间移动并穿过的装置来传送托架150。该传送装置可以包括例如图1B所示的轨道111。该轨道111可以被配置为容纳托架150并沿着轨道111传送托架150。在不受限制的情况下，可以由电动机、螺纹驱动器、带式驱动器、磁控制器等来控制托架150的移动。
在一个实施例中，将衬底160设置在接近头110、120的一侧的第一位置处的托架150上，并在托架150到达接近头110、120的相对侧的第二位置处时将该衬底去除。然后，托架150可以返回通过接近头110、120(或在接近头110、120上方、下方、或绕过)，返回到第一位置，在第一位置处，放置下一个衬底，并重复该过程。还可以使托架150移动通过多个接近头工位或其它处理工位。
托架150包括多个支撑销152(图4所示)，每个支撑销152具有衬底支撑体和对中特征(centering feature)(未示出)，以保证衬底160与托架150之间的均匀托架-衬底间隙158。控制该间隙158，使得弯液面平稳地从该托架转移到晶片并返回到该托架。在一个实施例中，托架150在导边(leading edge)154和尾边(trailing edge)156处具有倾斜边缘以防止弯液面液体的量随着托架150进入和离开弯液面而发生突然变化。例如，托架150具有六个边，其中两个导边每个与横向成角度θ，例如15°，并一起形成中心定位点(centrally-located point)，且相应的尾边每个与横向成角度θ并一起形成中心定位点。也可以是其他不会导致弯液面液体的快速位移的其它形状，诸如梯形或平行四边形，其中导边和尾边与托架的移动方向成除直角之外的角度或者与弯液面200的导边和尾边成一定角度(即不与其平行)。
应注意的是，虽然在图1所示的实例中，衬底沿着箭头166的方向穿过接近头110、120，但也可以是衬底保持静止，而接近头110、120在衬底上方和下方通过，只要衬底相对于接近头移动。此外，衬底在接近头之间通过时，其取向是任意的。也就是说，衬底不需要水平取向，而可以垂直取向或以任何角度取向。
在某些实施例中，控制器130控制托架150的移动和流体到上下接近头110、120的流动，所述控制器130可以是功能由逻辑电路、软件或两者确定的通用或专用计算机系统。可以从清洗室的设备或从容器供应流体。
图2示出上接近头110的示意性表示，其为下接近头120(图1)的镜像。每个接近头包括多个中心喷嘴116，通过该中心喷嘴来供应形成弯液面200的液体。该液体可以是去离子水、清洗溶液、或被设计为处理、清洗或漂洗衬底160的其它液体。多个真空口114在弯液面200的周边施加真空。真空口114吸出来自弯液面200的液体和周围流体，诸如空气或由喷嘴112供应的其它气体。在某些实施例中，可以将喷嘴112提供为围绕或部分地围绕真空口114并供应异丙醇蒸汽、氮气、其混合物、或其它气体或二相气/液流体。喷嘴112和由其供应的流体帮助保持弯液面200的表面处的粘着(coherent)液/气分界面。在上文对相关申请部分的交叉引用中通过引用而并入关于接近头结构和操作的更多细节。特别地，引用了美国专利申请10/261,839、10/330,843以及10/330,897以得到关于接近头结构和操作的额外细节。
图3A至3C说明通过并离开由上下接近头110、120形成的弯液面200的衬底160。在这些图中，衬底160和托架150正在相对于接近头110、120移动到左侧。在图3A所示的时刻，衬底160一直延伸穿过弯液面200，使得衬底160的导边162和尾边164落在弯液面200的相对两侧且弯液面200的导边接近于衬底160的尾边164。应注意的是，通常，衬底160是圆形的，且虽然将托架150示为在弯液面200外面，但部分托架150可以与弯液面200接触，尽管在此图中不可见。
在图3B中，弯液面200正在从衬底160转移到托架150。这时，尾边164在弯液面200内。在一个实施例中，托架150在横截面上可以略厚于衬底160。例如，衬底160可以约为0.80mm厚，而托架可以约为1.5mm厚。因此，随着弯液面200转移到托架150上，可以由托架150设置一定量的弯液面液体。在图3C中，弯液面已完全从衬底160转移到托架150上。
图4举例示出晶片托架150的俯视图。晶片托架150通常是扁平的，具有尺寸适合于容纳用于处理的晶片的开口151。可以将晶片支撑在多个销152上。在一个实施例中，提供四个销152以用于在开口151内支撑晶片。托架150还可以包括为晶片搬运(handling)设备提供入口的多个凹口153。例如，用来将晶片放置在托架150内或从托架150取回晶片的机械手的夹钳或末端执行器可以包括在凹口153中延伸然后在晶片下面滑动以便可以使晶片升高的指状物(finger)，或者搬运设备可以在凹口153的位置处从边缘夹住晶片。在另一实施例中，可以由第一设备(未示出)从托架150下面使晶片升高，然后由机械手的夹钳或末端执行器来去除，在这种情况下，不需要凹口153。
托架150还包括沿着托架的左右边缘的加厚边缘155、157以提供增加的机械稳定性。在图5所示的透视横截面图中可以更清楚地看到加厚部分155、157。在一个实施例中，可以使用加厚边缘155、157来夹紧或固定于输送机装置(未示出)。在另一实施例中，加厚边缘包含用于将托架150固定于输送机系统的嵌入磁铁。
由于托架150在晶片穿过可能只有约2～3毫米厚的弯液面时支撑晶片，所以重要的是托架要薄、平坦且具有刚性，以便使垂直偏转，即垂直于托架150的表面的偏转最小化。还可能需要该托架对诸如氢氟酸(氟化氢溶液)等在湿法晶片处理中使用的腐蚀性化学剂具有抵抗力。在一个实施例中，托架约1.5毫米厚，在沿着加厚边缘155、157的加厚部分处除外。在一个实施例中，使托架150保持张紧，其左右边缘被输送机装置相互远离地偏移以增加托架的刚性并减小垂直偏转。在另一实施例中，将托架150制造具有轻微拱形，以便当其承载晶片或其它衬底的重量时，其变平以获得与平面的最小偏离度。还可能实现这两种情况，即可以在使托架保持张紧的同时提供用于在负荷下具有改善的平坦度的轻微拱形以进一步减小垂直偏转。
图6示出具有更适合于被置于张紧状态、从而减小垂直偏转的矩形设计的托架180。如前所述，可以有其它形状，诸如梯形形状，该梯形形状用于提供可以在使弯液面流体随着托架进入弯液面200的快速移位最小化的同时沿着横向被置于张紧状态、即左右边缘被相互远离地偏移的形状。
图7示出沿图4中的线N-N的托架150的横截面图，为了清晰起见而将垂直尺度放大。在一个实施例中，托架150包括具有由诸如聚偏二氟乙烯等热塑性材料形成的顶片202和底片204的外部覆盖物。适合于在托架150中使用的聚偏二氟乙烯片可从宾夕法尼亚州费城的Arkeme公司获得，商品名称“Kynar”。还考虑除聚偏二氟乙烯之外的材料。此类材料在被暴露于苛刻的化学环境时应在机械和化学上稳定或惰性。另外，需要外部材料可配置为期望的疏水性以帮助保持弯液面200(图2～3C)的完整性。也就是说，在某些工艺中，期望疏水性托架，而在其它工艺中，期望更具亲水性的托架。可以通过研磨或抛光来对诸如聚偏二氟乙烯的材料进行制备以将疏水性调节至期望水平。可以使用已知的热塑材料焊接技术或通过粘合剂来将顶片和底片202、204密封在一起。可以调节顶片和底片202、204的厚度以平衡托架150的使用寿命和平坦度要求。
托架150可以包括图8所示的分层结构220。该分层结构由复合材料芯222、以及预浸渍(pre-impregnated)层224、226形成。另外，可以提供由聚偏二氟乙烯粉末或条形成的填料228。在一个实施例中，复合材料芯222包括例如具有环氧树脂基的模压碳纤维增强复合材料。上下复合材料芯222是一层或多层单向预浸渍(预浸)碳纤维环氧复合材料224。作为模压复合材料芯222的替代，可以采用多层碳纤维增强复合材料片材。所述单向预浸渍复合材料可以取向为纤维垂直于左右边缘155、157(图4)而延伸。适当的碳纤维增强环氧树脂广泛地可以预浸渍形式使用。还可以考虑具有高强度-重量比的其它材料来代替碳纤维增强环氧树脂。在复合材料结构层224与顶片和底片202、204之间是一层芳族聚酰胺结构226。芳族聚酰胺结构在市场上可广泛获得以用于层压物。芳族聚酰胺结构还可以广泛获得具有不同编织图案的预浸渍形式。由芳族聚酰胺纤维形成的结构得益于纤维的高强度和弹性模数，为托架结构提供非凡的硬度。其它材料可适合于代替芳族聚酰胺结构。此类材料应具有足够刚性，足以在衬底在一个或多个相对接近头之间被传输时支撑该衬底。可以使诸如芳族聚酰胺结构的一些结构预张紧，以便其基本不会在具有切断的情况下弯曲或下垂。例如，此类预张紧可以类似于跨越鼓膜(drumhead)的拉伸结构。诸如SiC的材料也可能不同样适合于被以这种方式预张紧。在一个实施例中，此增强层还应具有与氟化氢及其它腐蚀性化学剂的化学相容性。
在一个实施例中，将销152(图6中仅示出一个)嵌入填充材料224中。在一个实施例中，销152由聚偏二氟乙烯或聚醚醚酮(PEEK)制成。还可以考虑用其它刚性抗腐蚀材料来形成销152。
在一个实施例中，可以通过堆叠一层聚偏二氟乙烯片、一层芳族聚酰胺结构、包括单向碳纤维增强环氧树脂的复合材料芯、另一层芳族聚酰胺结构和另一层聚偏二氟乙烯片来制造晶片托架150。为了得到由边缘和拐角形成的更精确形状，包括加厚边缘155、157(图4、5)，可以在芳族聚酰胺层的芯周围分布聚偏二氟乙烯粉末。在一个实施例中，将磁铁(未示)嵌入加厚边缘155、157中以与磁性传送器一起使用。在另一实施例中，如果芯222不存在，则由具有互锁特征(如槽)的模压制件(未示出)来形成加厚边缘以啮合芯222或复合材料结构层224。可以通过注射或挤压成型和/或机械加工而由聚偏二氟乙烯来形成所述模压边缘制件。也可考虑用于形成加厚边缘155、157的其它适当材料和方法。
然后可以向托架的顶部和所有边缘施加压力以保证限制和平坦度，在一个实施例中，将压力板形成为具有凹坑以模制加厚边缘155、157。另外，可以将压力板形成为具有轻微拱形以形成在承载晶体的负荷下变平的拱形托架。当然，可以将其它形状形成(shape-forming)的特征形成为压力板。
在一个实施例中，在持续施加压力的同时，可以使堆栈经受热固化循环以烧结或粘结填料材料228，使残余应力最小化并保证平坦度。在一个实施例中，热循环包括将结构加热至聚偏二氟乙烯的熔化温度，即大约340°F(171℃)。如通常所已知的那样，根据所使用的特定烘箱，可以建立烘箱与部分温度之间的校准曲线以得到结果的一致性。在固化循环之后，可以将托架加工至最终尺度，然后表面改性至期望的疏水性所需的特定粗糙度。在另一实施例中，使堆栈经受热循环以减小残余应力，并单独地加热至聚偏二氟乙烯的熔化温度。
在一个实施例中，如图7所示，在热循环之前在适当的位置模制销152(图4、6)。所制造的托架为托架提供轻重量、高强度以及硬度，使对湿法清洗工艺来说至关重要的垂直偏转最小化。该托架还具有对氢氟酸和来自其它清洗成分、副产品以及从衬底上去除的材料的污染物的高抵抗力。用来封装芯复合材料结构的聚偏二氟乙烯和芳族聚酰胺结构允许能够为干燥性能调节材料的疏水性的表面改性。复合材料托架的混合构造在运输和清洗晶片时的晶片搬运和振动衰减期间提供容损(damage tolerance)的附加优点。
图9示出说明用于制造托架150的示例性复合材料成型工艺的流程图300。应注意的是这些程序上的步骤不一定按照所指示的顺序来执行，可以使一些程序上的步骤相互同时进行。程序如起始框302所指示的开始，并进行到操作304，其中施加热固化驯化以使残余应力和不平度最小化。用“不平度”意指与设计的垂直偏差。设计可以并入如上所述的轻微拱形，以便其在晶片或其它衬底的重量下变平。
在操作306中，施加达到外层的熔化温度的温度。可以将此操作与操作304结合。在一个实施例中，所述外层可以由聚偏二氟乙烯形成，其具有约340°F(171℃)的熔化温度。根据所使用的烘箱，可以建立烘箱与部分温度之间的校准曲线。
在操作308中，在托架的顶部和所有边缘上施加压力以保证限制。可以利用热循环同时施加该压力。
在操作310中，将托架加工至最终尺度。可选地，在操作312中，可以将表面条件修改为所期望的疏水性要求的粗糙度。然后，如方框314所指示的，该制造方法结束。
虽然为了清楚理解的目的而相当详细地描述了前述发明，但显然，在所附权利要求的范围内，可以实施某些变化和修改。因此，应将这些实施例视为说明性而非限制性的，且本发明不限于本文所给出的细节，而是可以在所附权利要求和等同方式的范围内进行修改。

Claims (25)

1.一种托架，其用于在衬底通过将该托架穿过由至少一个接近头形成的弯液面而被处理时支撑该衬底，该托架包括：
框架，具有尺寸适合于容纳衬底的开口和用于在该开口内支撑该衬底的多个支撑销，所述开口略大于该衬底，使得该衬底与该开口之间存在间隙；所述框架包括复合材料芯、顶片、底片、该顶片与该复合材料芯之间的芳族聚酰胺结构层以及该底片与该复合材料芯之间的第二芳族聚酰胺结构层，其中，所述顶片和所述底片包括机械和化学上稳定或惰性的高分子材料。
2.根据权利要求1所述的托架，其中，所述框架具有轻微拱形，以便当该框架处在衬底的负荷下时，该框架基本变平以获得偏离平面的最小垂直位移。
3.根据权利要求1所述的托架，其中，所述复合材料芯包括具有环氧树脂基的模压碳纤维复合材料。
4.根据权利要求1所述的托架，其中，所述复合材料芯包括至少一层单向预浸渍碳纤维材料。
5.根据权利要求4所述的托架，其中，所述单向预浸渍碳纤维材料设置为碳纤维取向为垂直于该托架的左右边缘。
6.根据权利要求1所述的托架，其中，所述顶片和所述底片由聚偏二氟乙烯形成。
7.根据权利要求1所述的托架，其中，用环氧树脂来预浸渍所述芳族聚酰胺结构。
8.根据权利要求1所述的托架，其中，该托架的左右边缘被加厚以提供增加的机械稳定性。
9.根据权利要求1所述的托架，其中，所述托架还包括由在该托架的制造期间热循环处理过程中烧结或粘结的热塑性粉末所形成的填料。
10.根据权利要求1所述的托架，其中，所述支撑销由聚偏二氟乙烯或聚醚醚酮之一形成。
11.一种制造托架的方法，该托架用于在衬底通过将该托架穿过由至少一个接近头形成的弯液面而被处理时支撑该衬底，该方法包括：
形成碳纤维芯、顶片、底片、该顶片与该碳纤维芯之间的芳族聚酰胺结构层以及该底片与该碳纤维芯之间的第二芳族聚酰胺结构层组成的复合材料框架，所述顶片和所述底片由机械和化学上稳定或惰性的高分子材料形成，所述框架具有尺寸适合于容纳该衬底的开口，该框架还具有延伸进该开口以便在该开口内支撑该衬底的多个支撑销，所述开口略大于该衬底，使得该衬底与该开口之间存在间隙。
12.根据权利要求11所述的方法，其中，所述框架形成具有轻微拱形，以便当该框架处在衬底的负荷下时，该框架基本变平以获得偏离平面的最小垂直位移。
13.根据权利要求11所述的方法，其中，所述碳纤维芯具有环氧树脂基。
14.根据权利要求13所述的方法，其中，还通过在该碳纤维芯上方和下方添加至少一层单向预浸渍碳纤维材料来形成所述碳纤维。
15.根据权利要求14所述的方法，其中，所述单向预浸渍碳纤维材料的碳纤维取向为垂直于该托架的左右边缘，所述左右边缘沿着该托架的移动方向延伸。
16.根据权利要求11所述的方法，其中，所述顶片和所述底片由聚偏二氟乙烯形成。
17.根据权利要求11所述的方法，其中，用环氧树脂来预浸渍所述芳族聚酰胺结构。
18.根据权利要求11所述的方法，还包括模制具有加厚左右边缘的碳纤维以提供增加的机械稳定性，所述左右边缘沿着该托架的移动方向延伸。
19.根据权利要求11所述的方法，其中，所述托架还包括由在该托架的制造期间热循环处理过程中烧结或粘结的热塑性粉末所形成的填料。
20.根据权利要求11所述的方法，其中，所述支撑销由聚偏二氟乙烯或聚醚醚酮之一形成。
21.一种制造用于在制备衬底时使用的、如权利要求1所述的托架的方法，包括：
形成包括具有第一侧和第二侧的芯材料的主体，该芯材料具有在该芯材料的第一侧和第二侧两者上形成的热塑材料层；
在该主体中形成开口，该开口的尺寸被确定为容纳该衬底；
向该主体施加热固化循环以使残余应力最小化并降低该主体的不平特性；
在该热塑材料层的顶面和边缘上施加压力以保证该主体的限制；以及
加工该主体以形成该托架，所述加工被配置为形成该开口的尺度和该托架的外尺寸参数。
22.如权利要求21所述的制造用于在制备衬底时使用的托架的方法，其中，所述加工还包括：
使该热塑材料层的特定部分成形。
23.如权利要求21所述的制造用于在制备衬底时使用的托架的方法，使部分主体成形以形成该主体的边缘。
24.如权利要求21所述的制造用于在制备衬底时使用的托架的方法，其中，所述热固化循环使用达到第一侧和第二侧的热塑材料层的熔化温度的温度。
25.如权利要求21所述的制造用于在制备衬底时使用的托架的方法，其中，还包括：
修改该热塑材料层的表面粗糙度以获得期望的疏水性。
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US20080152922A1 (en) 2008-06-26
US20120168079A1 (en) 2012-07-05
WO2008085259A1 (en) 2008-07-17
US8292697B2 (en) 2012-10-23
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KR20090106536A (ko) 2009-10-09
CN101632163A (zh) 2010-01-20

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