TW480221B - Method to precisely align and adhere ink jet head chip and nozzle plate - Google Patents

Method to precisely align and adhere ink jet head chip and nozzle plate Download PDF

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Publication number
TW480221B
TW480221B TW90104803A TW90104803A TW480221B TW 480221 B TW480221 B TW 480221B TW 90104803 A TW90104803 A TW 90104803A TW 90104803 A TW90104803 A TW 90104803A TW 480221 B TW480221 B TW 480221B
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Taiwan
Prior art keywords
wafer
inkjet head
nozzle
nozzle plate
alignment
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TW90104803A
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Chinese (zh)
Inventor
Fu-Shan Lin
Chin-Yi Jou
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Microjet Technology Co Ltd
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Priority to TW90104803A priority Critical patent/TW480221B/en
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Publication of TW480221B publication Critical patent/TW480221B/en

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Abstract

This invention provides the method to precisely align and adhere ink jet head chip and nozzle plate, which is capable of improving shortcoming such as misalignment between ink jet head chip and nozzle plate and poor sealing between the chip and the nozzle plate. According to the inventive method, chips are cut from wafer and placed on a carrier plate, while the nozzle plates are also placed on another carrier plate. A sucker heated to above 100 DEG C, preferably 185 DEG C, is used to take and heat up the nozzle plates to 185 DEG C. Image alignment technique is employed to press the chips and the nozzle plates using previously made align mark, and to bind by the adhesion generated from heating the dry film resist on the chips through the heat coming from contact with the nozzle plates.

Description

480221 五、發明說明α) 技術領城 本發明係有關於一種精準對位黏合喷墨頭晶片 片之方法,更詳而言之,係為一種將晶片與噴孔片 ^ 設定對位基準記號(Align mark),以影像對位將二 壓結合,藉由晶片最上層的乾膜光阻遇熱產生的黏性: 者黏合之製造方法。 習知技術 喷墨式印表機一直在印表機市場上佔有一席之地, 〇 其是已成為個人電腦的基本周邊設備,隨著其日漸增加 解析度,容易應用於彩色印刷的特性,以及耗材的相容性 產品不斷的推陳出新,廣受到消費大眾喜愛,使喷墨式印 表機並未因雷射印表機的出現雨被淘汰;對於喷墨式印表 機雨言,喷墨頭即是一個相當重要的零件,因其與列印品 質息息相關,而喷墨頭的好壞完全取決於製造過程的精密 度。 請參閱第一圖,係顯示一典型的喷墨頭,喷墨頭的主 體為一晶片1,其申包含有電路系統,用來接受軟體的控 制以進行喷墨動作,中間有一鏤空處即為墨水貯放處2, 用以貯放來自墨匣中的墨水21,在墨水貯放處2之兩側周 圍有許多的墨水艙3,可與墨水貯放處2相通,使得墨水2ί 得以流入,藉由墨水艙3内的加熱板(heate]r )受熱將墨 水21由喷孔片4上之喷墨孔41喷出;墨水艙3上覆蓋一含許 多喷墨孔41的喷孔片4,每一墨水艙3均對應於一喷墨孔 41,作為射击墨水之出口。480221 V. Description of the invention α) Technology leader This invention relates to a method for accurately aligning and adhering a wafer chip of an inkjet head. More specifically, it is a method of setting a wafer and an orifice ^ to set an alignment reference mark ( Align mark), which combines the two pressures with the image alignment, and the adhesiveness produced by the dry film photoresist heat of the top layer of the wafer: the bonding method. Known technology inkjet printers have always occupied a place in the printer market. It is a basic peripheral device that has become a personal computer. With its increasing resolution, it is easy to apply to the characteristics of color printing and the characteristics of consumables. Compatible products are constantly being developed and widely loved by consumers, so that inkjet printers have not been eliminated due to the emergence of laser printers; for inkjet printers, the inkjet head is A very important part, because it is closely related to print quality, and the quality of the inkjet head depends entirely on the precision of the manufacturing process. Please refer to the first figure, which shows a typical inkjet head. The main body of the inkjet head is a wafer 1. It contains a circuit system that is controlled by software to perform inkjet action. There is a hollow in the middle. The ink storage place 2 is used to store the ink 21 from the ink cartridge. There are many ink tanks 3 on both sides of the ink storage place 2 and can communicate with the ink storage place 2 so that the ink 2 ί can flow in. By heating the heating plate (heate) r in the ink tank 3, the ink 21 is ejected from the inkjet holes 41 on the nozzle hole sheet 4; the ink tank 3 is covered with a nozzle hole sheet 4 containing many inkjet holes 41, Each ink tank 3 corresponds to an ink jet hole 41 as an outlet for shooting ink.

第4頁 480221 五、發明說明(2) 請參閱第二圖,其係為習知黏合喷墨頭喷孔片方法之 示意圖’晶圓5内包含數十個晶片1 ,這些晶片1已經過許 多的處理步驟,如沈積、蝕刻等步驟,而包含應有的電路 系統、墨水貯放處2及墨水艙3等等,接下來的步驟便是要 將喷孔片4與各個晶片1黏合。習知之方法係於一晶片1上 的適當位置點膠,然後以吸嘴將一喷孔片4放置於此晶片! 上;接著再於另一晶片1上點膠,然後再將另一片喷孔片4 放置於此晶片1上;相同的點膠、放置步驟就如此重 卞回,直到晶圓5上所有的晶片!都已覆蓋一喷孔片4。 J將此晶圓5與所有的噴孔片4加壓加熱,即可完成黏合步 將喷孔片4放置於晶以 式進行,使得各哈家步驟需要以精密對位的方 水21的流出順暢^此對應到各墨水臉3 ’才能使墨 住’因此單一的對:步1不=將f成墨水21的出口被堵 小段時f[如此,習知:=,母:人對位動作即需要-的步驟耗費相當長的時間::點:=明顯,重複相同 以極精確f制,品::耗時,且由於點勝量難 10 "m的誤"差的B曰若片以製造技術而言’晶片的厚度一般會有± 達± 20 ,如以 別的晶片來比較,其厚度誤差值可 黏合光阻層壓合不肖2下壓距離,常會造成晶片最上層的 48U221Page 4 480221 V. Description of the invention (2) Please refer to the second figure, which is a schematic diagram of a conventional method for bonding nozzles of an inkjet head. The wafer 5 contains dozens of wafers 1. These wafers 1 have passed through many. The processing steps, such as deposition, etching, etc., include the proper circuit system, ink storage 2 and ink tank 3, etc. The next step is to glue the nozzle plate 4 to each wafer 1. The conventional method is to dispense a suitable position on a wafer 1, and then place a nozzle 4 on the wafer with a suction nozzle! And then dispense on another wafer 1, and then place another nozzle hole 4 on this wafer 1; the same dispensing and placement steps are repeated until all wafers on wafer 5 are restored. !! Both have covered an orifice plate 4. J This wafer 5 and all the nozzle holes 4 are heated under pressure to complete the bonding step. The nozzle holes 4 are placed on the crystal to perform the steps, so that each Hajia step needs to flow out of the square water 21 precisely aligned. Smooth ^ This corresponds to each ink face 3 'can make ink live' so a single pair: step 1 does not = f will be blocked when the outlet of ink 21 is a small segment f [So, it is known: =, mother: human alignment action That is, the step that takes-takes quite a long time :: point: = obvious, repeat the same with extremely accurate f, product :: time-consuming, and because the point wins are difficult 10 " m's error " poor B said if In terms of manufacturing technology, the thickness of the wafer will generally be ± up to ± 20. If compared with other wafers, the thickness error value can be bonded to the photoresist and laminated. The pressing distance is usually 2U, which often results in the top layer of the wafer.

fΓίΓ圭的情形’若晶片厚度較大時會形成光阻層溢流 p:的情形,如此無法有效控制精密度的製程,會造 成屋〇〇品質不易控制,需多增拾 . , 增加了間接成本。冑多增加檢驗程序及人手,無形中 =,另一方面’在半導體的製程中係先將電路系統製 ;9片上即使在同一晶片上,亦會有每一位置之厚度 二法均一的情況發生,因此以整片晶圓的方式壓合,在品 質上亦控制不易。 Φ 再者,習知技術是將整片晶圓上之所有的晶片與噴孔 黏合後再進行切割分離,而不論用何者方式切割,在切 d的過程中所產生的碎屑(如超微小的矽砂),若掉入喷 孔片之喷孔中卡住時,既使以空氣喷搶清除,也不見得能 有效去除,會形成永久性的阻塞而影響喷墨頭的列印品 質0 技術揭霡The situation of fΓίΓ, 'If the wafer thickness is large, a situation of photoresist layer overflow p: will be formed, so that the precision control process cannot be effectively controlled, which will cause the quality of the house to be difficult to control and need to be added., Indirect cost.增加 Increase inspection procedures and manpower, virtually =, on the other hand, in the semiconductor manufacturing process, the circuit system is first made; even on the same chip, the thickness of each position may be uniform. Therefore, it is difficult to control the quality by pressing the whole wafer. Φ In addition, the conventional technology is to bond all the wafers on the whole wafer with the spray holes and then cut and separate them. Regardless of the method of cutting, the debris generated during the cutting process (such as Supermicro) Small silicon sand), if it falls into the nozzle hole of the nozzle hole and gets stuck, even if it is removed by air jet, it may not be effectively removed, which will form a permanent blockage and affect the print quality of the inkjet head. 0 Technical Reveal

鑑於習知黏合喷墨頭喷孔片之製造技術上之諸項缺 失L仍有待研發新的製造方法加以克服;本發明之目的在 於f供一種精準對位黏合喷墨頭晶片與喷孔片之方法,係 將曰曰片與喷孔片上預先設定對位基準記號(Align mark )’以影像對位將二者下壓結合,藉由晶片最上層的乾膜 光阻遇熱產生的黏性將二者黏合之製造方法。 由上述之目的’可得知本發明方法之步驟特徵係為先將晶 圓上的晶片(Ch i p )切割下來後依序排列於已設定位置的 載盤上’並把喷孔片亦一一排列製放於已設定位置之另一In view of the defects in the conventional manufacturing technology of the adhesive inkjet head orifice plate, L still needs to be developed by a new manufacturing method to overcome; the purpose of the present invention is to provide a precise alignment of the inkjet head wafer and the orifice plate. The method is to pre-set the alignment reference mark (Align mark) on the wafer and the orifice plate to combine the two with the image alignment. The viscosity generated by the dry film photoresist heat of the wafer Manufacturing method of the two. From the above purpose, it can be known that the steps of the method of the present invention are characterized in that the wafer (Ch ip) on the wafer is first cut and then sequentially arranged on the carrier plate at the set position, and the nozzle holes are also one by one. Arranged in another position

第6頁 五、發明說明(4) 載盤上,之後以一加熱至100°C以上的吸盤(suckej·)將 噴孔片吸起使喷孔片亦受傳熱達1 0 0 t以上高溫,再利用 晶片與喷孔片上預先設定對位基準記號(Aligrl mark ), 以影像對位將二者下壓結合,藉由晶片最上層的乾膜光阻 遇喷孔片的熱度而產生的黏性將二者黏合。 進一步詳述該精準對位黏合喷墨頭晶片與喷孔片之方法中 的程序,其中,u )將晶圓上的晶片(chip)切割下/來 後依序排列於載盤上,(2 )把喷孔片亦--排列製放於 已設定位置之另一載盤上,(3)以一加熱至1〇(rc以上、, 最佳溫度為185 C的吸盤(sucker )將喷孔片吸起使喷孔 片亦受傳熱達185。(:以上高溫,(4)利用晶片與喷孔片上 預先設定對位基準記號(Align mark),以影像對位將二 者下壓結σ ,( 5 )藉由晶片最上層的乾膜光阻遇喷孔 的熱度而產生的黏性將二者黏合。 其中,在步驟(1)中晶片在切割前需先在其上塗佈 -欽瞄m著層即為光阻層,其材質為 乾膜光阻,該光阻層之厚度可為1〇”至^ 之切割方式可為鑽石切割法、雷 片 另外載…設…或= 設位ϊ步:二)像v:作孔業'之載盤上亦設定喷孔片之預 在步驟(3 )中,吸盤先經力口熱 續維持此一溫唐,尨你▲ 王L的网溫,並持 炎將喷孔片從載盤上吸起,挪移至晶片 4802215. Description of the invention on page 6 (4) After loading the nozzle plate with a sucker (suckej ·) heated to 100 ° C or higher, the nozzle plate is also subjected to heat transfer to a high temperature above 100 t Then, the wafer and the orifice plate are preset with an alignment reference mark (Aligrl mark), and the two are pressed and combined by image alignment. The dry film photoresist on the top layer of the wafer resists the heat generated by the orifice plate. Sex binds the two together. The procedures in the method for accurately positioning the inkjet head wafer and the orifice plate by further alignment are further detailed, in which u) the wafers on the wafer are cut / sequentially arranged on the carrier plate, (2 ) Placing the nozzle plate on another carrier plate which has been set up. (3) The nozzle is heated by a suction cup (sucker) heated to 10 (above rc, the optimal temperature is 185 C). The film is sucked to make the nozzle hole also receive heat transfer up to 185. (: above high temperature, (4) using the wafer and the nozzle hole to set the alignment reference mark (Align mark) in advance, the two are pressed down by the image registration σ (5) The adhesiveness generated by the dry film photoresist of the uppermost layer of the wafer against the heat of the spray holes will bond the two. Among them, in step (1), the wafer needs to be coated on it before cutting. The aiming layer is a photoresist layer, and the material is a dry film photoresist. The thickness of the photoresist layer can be 10 ”to ^. The cutting method can be diamond cutting method, and the thunder sheet is additionally loaded… set… or = set Steps: Two) Like v: for the hole industry, the nozzle plate is also pre-set in step (3), the sucker first continues to maintain this warmth through the mouth, 尨 you ▲ L web temperature, and holding the nozzle plate from inflammation aspirated from the platen, diversion to the wafer 480221

,盤上方,因喷孔片與為金屬材質,此喷 南溫傳熱,亦達到185。(;的高溫。 吸盤的 #…在步驟(4 )中,晶片與喷孔片在製造時已分別預先 二广=位基準記號(AligI1 mark),二者之對位基準記號 設在同一定位點上,以便影像對位結合時能準確結合 、誤差的容許範圍為±5//m,二者之對位基準記號可為圓 形、方形、三角形或其他幾何圖形。 ▲在步驟(5 )中,喷孔片下壓與晶片結合時,喷孔片 的高溫與加壓可使晶片上最上層的乾膜光阻瞬間硬化,與 喷孔片產生鍵解作用,形成黏性將二者黏合。 為使本發明之上述目的與步驟能讓審查委員與熟悉此 藝之人士能更進一步明瞭,特以下列圖示及本發明較佳實 施方式予以詳細說明如下: 星簡單說明 第1圖係為典型喷墨頭之示意圖; 第2圖係為習知黏合喷墨頭喷孔片方法之示意圖; 第3圖係為本發明較佳實施例之晶片載盤之示意圖; 第4圖係為本發明較佳實施例之嘴孔片載盤之示意圖; 第5圖係為本發明較佳實施例之晶片與喷孔片上之對位基 準記號之示意圖; 第6圖A〜B係為本發明較佳實施例中另種對位基準記號之示 意圖; 第7圖A〜C係為本發明較佳實施例中晶片與喷孔片黏合程序 之示意圖。Above the plate, the temperature of this spray spray reaches 185 due to the spray holes and the metal material. (; High temperature. # Of the suction cups ... In step (4), the wafer and the nozzle plate have been respectively prepared in advance with two wide = AligI1 mark, and the alignment reference mark of the two is set at the same positioning point. So that the image can be accurately combined when the registration is combined, the tolerance range is ± 5 // m, and the registration reference mark of the two can be a circle, a square, a triangle, or other geometric figures. ▲ In step (5) When the nozzle plate is pressed down and combined with the wafer, the high temperature and pressure of the nozzle plate can instantly harden the dry film photoresist on the wafer, and bond with the nozzle plate to form a tackiness to bond the two. In order to make the above-mentioned objects and procedures of the present invention clearer to the reviewers and those familiar with the art, the following illustrations and preferred embodiments of the present invention are described in detail as follows: A brief description of the first picture is typical Schematic diagram of the inkjet head; Figure 2 is a schematic diagram of the conventional method of bonding the nozzle plate of the inkjet head; Figure 3 is a schematic diagram of the wafer carrier disk of the preferred embodiment of the present invention; Figure 4 is a comparison of the present invention Perforated plate carrier Intent; Figure 5 is a schematic diagram of the alignment reference mark on the wafer and the nozzle plate of the preferred embodiment of the present invention; Figures 6 to A are schematic diagrams of another alignment reference mark in the preferred embodiment of the present invention FIG. 7 is a schematic diagram of a bonding process of a wafer and an orifice plate in a preferred embodiment of the present invention.

480221 五、發明說明(6) 圖式符號說^ 1 晶片 2 墨水貯放處 3 墨水艙 4 喷孔片 5 晶圓 10 晶片載盤 11 加熱板 21 墨水 31 光阻層 40 喷孔片載盤 41 喷孔 70 對位基準記號 請參閱第3圖所示 係已將晶片1的置放位 本發明較佳實施例之晶片載鸯1 Q 予以事先規劃,使晶片1能一一等 齊排列於載盤1 〇上,此一排列次序非常重要,可使晶 盤1 0與喷孔片載盤40能配合自動化機械的運作,由電腦 制每一片晶片1與喷孔片4的接合。 卫 _請同時參閱第5圖,當晶片1切割下來放置於載盤1〇 前,每一晶片皆已經過許多先前的處理步驟,包括沈積、 蝕刻及喷砂等步驟,使晶片内成形有電路系統、墨水貯放 處2及墨水艙3等構造,並於晶片1上適當地塗佈一光阻層 31,該光阻層31係為一乾膜光阻,該光阻層31之厚度可為 1〇 至100 ,以微影步驟經過軟烤、曝光及顯像$程序 後,洗去不需要的部份,形成一個個用作盛裴墨水2丨的墨 水艙3。當晶片1以鑽石切割法、雷射切割法或轉動刀片鋸 切法切割下來後,需經去屑處理後才置入載盤丨〇 碎屬卡陷於墨水艙3内造成阻塞。 Μ 第4圖所示,喷孔片4上有對應於晶片丨上複數個墨水 第9頁 480221 五、發明說明(7) 艙3之複數個噴孔41,喷孔片4之載盤40亦與晶片1之載盤 1 0 —樣,做同數量、同位置的設計規劃,使喷孔片4之載 盤40與晶片1之載盤10能運作一致。 當在自動化機械運作時,經加熱高達設定溫度1〇〇1 以上,最佳溫度為185 °C的吸盤吸起載盤4〇上左下角的噴 孔片4後,吸盤移至載盤1 〇上左下角的晶片1之上方時,影 ,對位即開始運作,藉由晶片1與噴孔片4上之對位基準記 號70做為校正,使二者達到高精度定位,結合時誤差容許 度為士 5 // m。 而第5圖所示之重點在於對位基準記號7〇,在晶片j與 喷孔片4製造時,分別在其相同部位設定相同的對位基準 記號70,在第5圖中對位基準記號7〇為圓形,該對位基準 呑己號70亦可有不同的圖形變化,如第6圖所示之方形或三 角形,亦或可為其他任何幾何圖形。 第7圖A〜C所示為晶片與喷孔片黏合程序,其中,a ) 晶片1之上方塗佈一光阻層31後,B)以微影步驟經過軟 烤曝光及顯像程序後,洗去不需要的部份,形成可容納 墨水21 =墨水艙3,墨水21係由墨水貯放處2流入,其流入 方向為從垂直於紙面的方向進入;而在墨水艙3之下方的 晶片1内則加工成加熱板丨丨^^“^^’使喷墨頭在使用 狀態時/墨水21受加熱板11的作用從喷孔片4上之喷孔41喷 :二孔為孔片4與晶片丨完全黏合後之成品,經影像對 一 1 it 41比&與晶片1可達微誤差的黏合,喷孔片4上的每 一 白能準確地與墨水艙3的開口對位結合,使喷墨 第ίο頁 480221 五、發明說明(8) 頭的整體品質可以確保。480221 V. Description of the invention (6) Symbols of the illustration ^ 1 Wafer 2 Ink storage place 3 Ink tank 4 Nozzle 5 Wafer 10 Wafer carrier 11 Heating plate 21 Ink 31 Photoresist layer 40 Nozzle carrier 41 The reference mark for the alignment of the nozzle 70 is shown in Figure 3. The wafer 1 has been placed on the wafer 1 in the preferred embodiment of the present invention. The Q is planned in advance so that the wafers 1 can be aligned on the wafer one by one. On the disk 10, this arrangement order is very important, so that the crystal disk 10 and the nozzle plate carrier plate 40 can cooperate with the operation of an automated machine, and the bonding of each wafer 1 and the nozzle plate 4 is made by a computer. _ Please refer to FIG. 5 at the same time. When wafer 1 is cut and placed on carrier 10, each wafer has gone through many previous processing steps, including steps such as deposition, etching, and sandblasting, so that circuits are formed in the wafer. System, ink storage place 2 and ink tank 3, etc., and a photoresist layer 31 is appropriately coated on the wafer 1. The photoresist layer 31 is a dry film photoresist, and the thickness of the photoresist layer 31 may be From 10 to 100, after the soft baking, exposure, and development procedures in the lithography step, the unnecessary parts are washed away to form ink tanks 3 which are used as Sheng Pei inks. After the wafer 1 is cut by the diamond cutting method, the laser cutting method or the rotary blade sawing method, it needs to be chipped before being placed in the carrier tray. The broken metal stuck in the ink tank 3 and caused blockage. Μ As shown in Figure 4, the nozzle plate 4 has a plurality of inks corresponding to the wafer. Page 9 480221 V. Description of the invention (7) A plurality of nozzle holes 41 of the cabin 3, and the carrier plate 40 of the nozzle plate 4 is also As with the carrier plate 10 of the wafer 1, the same number and the same location design planning are made so that the carrier plate 40 of the nozzle plate 4 and the carrier plate 10 of the wafer 1 can operate in unison. When operating in an automated machine, the suction cup is heated up to a set temperature of more than 001, and the optimal temperature is 185 ° C. After sucking up the nozzle plate 4 in the upper left and lower corners of the carrier 40, the sucker moves to the carrier 1. When the upper left lower corner of the wafer 1 is above, the shadow and alignment operation starts. The alignment reference mark 70 on the wafer 1 and the nozzle plate 4 is used as a correction to achieve high-precision positioning of the two, and the error is allowed when they are combined. Degree is ± 5 // m. The important point shown in FIG. 5 is the alignment reference mark 70. When the wafer j and the orifice plate 4 are manufactured, the same alignment reference mark 70 is set at the same location, and the alignment reference mark is shown in FIG. 5. 70 is a circle, and the registration reference number 70 can also have different graphic changes, such as a square or a triangle as shown in FIG. 6, or any other geometric figure. Figure 7 A to C show the bonding process of the wafer and the orifice plate, in which a) after a photoresist layer 31 is coated on the wafer 1 and B) after soft baking exposure and development procedures in a lithography step, Wash away the unnecessary parts to form an ink tank 21 = ink tank 3. The ink 21 flows in from the ink storage 2 and its inflow direction is from the direction perpendicular to the paper surface; and the wafer below the ink tank 3 1 is processed into heating plate After the product is completely bonded to the wafer, it can be bonded to the wafer 1 with a slight error compared to the image 1 and 41. Each white on the nozzle plate 4 can be accurately aligned with the opening of the ink tank 3. , So that the inkjet page ίο page 480221 V. Description of the invention (8) The overall quality of the head can be ensured.

本發明精準對位黏合喷墨頭晶片與喷孔片之方法與習 知技術相比較,可得知本創作之優點為1 )晶片先經切割 方式後排列於載盤,使喷孔片與晶片之黏合為一對一方式 進行,藉由吸躱的氣動壓力使每一個結合件均可達完全黏 合,改善了以往整片晶圓黏合時,每片晶片厚度不一所形 成的黏合不良之缺失;2)利用乾膜光阻高分子的遇熱硬 化並形成黏性的特性,作無膠式的黏合,完全改善以往晶 片與喷孔片黏合時需逐一上膠,費工費時,又點膠不均的 缺點;3 )以晶片與喷孔片分置於不同的獨立空間(載盤 )上,再以吸盤為黏合媒介將喷孔片挪移至晶片上方,藉 由立體空間的影像對位技術,使二者黏合,這種平面與空 間的位置轉換與運用,使整個黏合作業程序更為順暢,又 以自動化機械作業,可達省工省時;4 )在晶片與噴孔片 ^預先設定對位基準記號,以方便二者之黏合對位,達到 咼精密度的黏合,藉以提升產品之良率及品質。以上所述 之諸優點s未見於習知之黏合方法中,足顯見本發明是前 =未見的,且經多次實作驗證,更證實本發明確能使黏合 的成时達到設定之要求,顯示本發明具備了無可置疑 實用性。 # 本發明精準對位黏合喷墨頭晶片與喷孔片之方法的詳 :實施步驟已充分揭露如上,然其並非用以限制本發明之 任何熟悉此項技藝者,在不脫離本發明之精神和範 依本發明申請專利範圍所做之等效變化與修飾,皆Compared with the conventional technique, the method for accurately aligning and bonding the inkjet head wafer and the nozzle plate according to the present invention shows that the advantages of this creation are 1) the wafer is first cut and then arranged on the carrier plate, so that the nozzle plate and the wafer The bonding is performed in a one-to-one manner, and each bonding member can be completely bonded by sucking pneumatic pressure, which improves the lack of poor bonding caused by the uneven thickness of each wafer in the past when the whole wafer was bonded. ; 2) Use the dry film photoresist polymer to harden and form stickiness when heated, for glue-free adhesion, completely improve the past chip and nozzle hole adhesive need to be glued one by one, labor and time, and dispensing Disadvantages of unevenness; 3) The wafer and the nozzle plate are separated into different independent spaces (carrier disks), and then the nozzle plate is moved to the wafer with the suction cup as the bonding medium, and the image alignment technology in the three-dimensional space is used. To make the two stick together, this plane and space position conversion and use, make the entire adhesion industry process more smooth, and automated machinery operations, can save labor and time; 4) in the wafer and nozzle orifice ^ preset Registration reference mark To facilitate bonding between the two alignment to achieve 咼 precision bonding, in order to improve the yield and quality of products. The above-mentioned advantages s have not been seen in the conventional bonding method. It is obvious that the present invention is previously unseen, and after multiple implementation verifications, it has been confirmed that the present invention can indeed achieve the set requirements for bonding. The present invention is shown to have unquestionable practicality. # Details of the method of the present invention for precisely aligning the inkjet head wafer and the orifice plate: the implementation steps have been fully disclosed above, but it is not intended to limit anyone skilled in the art who is familiar with this technology, without departing from the spirit of the invention The equivalent changes and modifications made by He Fan according to the scope of patent application of the present invention are

480221 五、發明說明(9) 應屬本創作專利之涵蓋範圍 41 # 1^1 第12頁 480221 圖式簡單說明 第1圖係為典型喷墨頭之示意圖; 第2圖係為習知黏合喷墨頭喷孔片方法之示意圖; 第3圖係為本發明較佳實施例之晶片載盤之示意圖; 第4圖係為本發明較佳實施例之喷孔片截盤之示意 圖; 第5圖係為本發明較佳實施例之晶片與喷孔片上之對位基 準記號之示意圖; 第6圖A〜B係為本發明較佳實施例中另種對位基準記號之示 意圖; 第7圖A〜C係為本發明較佳實施例中晶片與喷孔片黏合程序 之示意圖。 圖式符號說明 1 晶片 2 墨水貯放處 3 墨水艙 4 噴孔片 5 晶圓 10 晶片載盤 11 加熱板 21 墨水 31 光阻層 40 喷孔片載盤 41 喷孔 70 對位基準記號 糌480221 V. Description of the invention (9) Should belong to the scope of this creation patent 41 # 1 ^ 1 Page 12 480221 Schematic description of the first diagram The first diagram is a schematic diagram of a typical inkjet head; the second diagram is a conventional adhesive spray Schematic diagram of nozzle head nozzle method; Figure 3 is a schematic diagram of a wafer carrier disk of a preferred embodiment of the present invention; Figure 4 is a schematic diagram of a nozzle disc cutting plate of a preferred embodiment of the present invention; Figure 5 It is a schematic diagram of the alignment reference mark on the wafer and the orifice plate of the preferred embodiment of the present invention; Figures 6 to A are schematic diagrams of another alignment reference mark in the preferred embodiment of the present invention; Figure 7A ~ C is a schematic diagram of the bonding process of the wafer and the orifice plate in the preferred embodiment of the present invention. Explanation of symbols: wafer 2 ink storage place 3 ink tank 4 nozzle plate 5 wafer 10 wafer carrier 11 heating plate 21 ink 31 photoresist layer 40 nozzle plate carrier 41 nozzle 70 alignment reference mark 糌

Claims (1)

"f«U221 六、申請專利範園 1 · 一種精準對位黏合喷墨頭晶片與喷孔片之方法,此喷墨 頭係由一晶片與一喷孔片為其構成主體,其中,該晶片 與該喷孔片均具有至少一個對位基準記號,並於晶片上 適當地塗佈一光阻層;該喷孔片上有對應於晶片上複數 個墨水艙之複數個喷孔;其晶片與喷孔片之黏合步驟係 包含: (1 )將晶片從晶圓上切割分離, (2 )以一加熱至i 〇〇 〇c以上的吸盤將喷孔片吸起使喷孔 片亦受傳熱達1 〇 〇 °c以上的高溫, (1 2) 利用晶片與喷孔片上預先設定該對位基準記號,以 影像對位將二者下壓結合, (4) 藉由晶片最上層的光阻層遇喷孔片的熱度而產生 黏性將二者黏合。 範圍第1項所述精準對位黏合喷墨頭晶片與 驟: 方法’其11,於該步驟(1)中還包含下列步 4 1 二;序排列置放於已設定位置之載盤上。 •喷員所述精準對位黏合喷墨頭晶片與 以鑽石切割法為之。 )中曰曰片之切割可 2 ·如申請專利範圍第1項 喷孔片之方法,其中,於H對墨頭晶片與 以雷射切割法為之。、, w 中晶片之切割可 5.如申請專利範圍第丨項 W平對位黏合噴墨頭晶片與 申請專利範圍 喷孔片之方法,其中,於該步驟(1 )中晶片之切割可 以刀片鑛開法為之Q 如申請專利範圍第1項所述精準對位黏合喷墨頭晶片與 喷孔片之方法,其中,該光阻層之材料為一高分子乾膜 光阻。 7 ·如申清專利範圍第1項所述精準對位黏合喷墨頭晶片與 喷孔片之方法,其中,於該步驟(3)中加熱溫度以185 為最佳溫度。 8·如申請專利範圍第5項所述精準對位黏合喷墨頭晶片與" f «U221 VI. Patent Application Fan Yuan1 · A method for precisely registering the inkjet head wafer and the orifice plate by alignment, the inkjet head is composed of a wafer and an orifice plate as its main body, wherein, the Both the wafer and the nozzle plate have at least one alignment reference mark, and a photoresist layer is appropriately coated on the wafer; the nozzle plate has a plurality of nozzle holes corresponding to a plurality of ink tanks on the wafer; The bonding step of the nozzle plate includes: (1) cutting and separating the wafer from the wafer, (2) sucking up the nozzle plate with a suction cup heated to more than 1000 ° C so that the nozzle plate is also subjected to heat transfer It can reach a high temperature of more than 1000 ° C. (1 2) The registration reference mark is set on the wafer and the orifice plate in advance, and the two are pressed down and combined by the image registration. (4) The photoresist on the top layer of the wafer The layer meets the heat of the nozzle plate and produces stickiness, which binds the two. The precise alignment of the inkjet head wafer and step described in the first item of the range: Method ′ # 11, the step (1) also includes the following steps 4 1 2; placed in order on the carrier disc at the set position. • Alignment of the inkjet head wafer and the diamond cutting method as described by the sprayer. ) The cutting of the wafer can be done 2 · As in the method of applying patent No. 1 for the nozzle plate method, in which the ink head wafer is aligned at H and the laser cutting method is used. The cutting of the wafer in the wafer can be done in the same way as in the patent application No. 丨 W level alignment bonding inkjet head wafer and the patent application nozzle hole method, wherein the wafer cutting in this step (1) can be bladed The mining method is Q. The method for precisely aligning the inkjet head wafer and the orifice plate as described in item 1 of the patent application range, wherein the material of the photoresist layer is a polymer dry film photoresist. 7 · The method of precisely registering the inkjet head wafer and the orifice plate as described in item 1 of the patent application scope, wherein the heating temperature in step (3) is 185 as the optimal temperature. 8 · Accurate alignment of the inkjet head chip and 喷孔片之方法,其中,該光阻層之厚度為1〇//111至1〇() β m 〇 9. 如申請專利範圍第丨項所述精準對位黏合喷墨頭晶片與 噴孔片之方法,其中,於該步驟(4)中對位基準記號 可為圓形記號。 10. 如申請專利範圍第i項所述精準對位黏合喷墨頭晶片多 片之方法’其中,於該步驟⑷中對位記號 可為方形記號。 •如申凊專利範圍第J項所述精準對位黏合喷墨頭晶片^ 方法,其中’於該步驟(4)中對位基準記號 可為二角形記號。 12噴如孔申片請之專Λ範圍/1項所述精準對位黏合喷墨頭晶“ 該步驟⑷中對位基準記號 可為幾何圖形記號。The method of spraying holes, wherein the thickness of the photoresist layer is 10 // 111 to 10 () β m 〇9. As described in the patent application scope item 丨, the inkjet head wafer and the spray holes are precisely aligned. The method of filming, wherein the alignment reference mark in step (4) may be a circular mark. 10. The method of precisely aligning and adhering multiple wafers of an inkjet head wafer as described in item i of the scope of patent application ', wherein the alignment mark in this step 对 may be a square mark. • The method for precisely aligning the bonded inkjet head wafer ^ as described in item J of the patent scope, wherein ′ the reference mark in step (4) may be a square mark. For 12 sprays, please refer to the special Λ range / 1 item of Kongshen Tablet for accurate registration of the bonded inkjet head crystal. “The registration reference mark in this step 可 can be a geometric mark. 第15頁Page 15
TW90104803A 2001-02-27 2001-02-27 Method to precisely align and adhere ink jet head chip and nozzle plate TW480221B (en)

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US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US7928366B2 (en) 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US7997288B2 (en) 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US8141566B2 (en) 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8146902B2 (en) 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry

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US7997288B2 (en) 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US7928366B2 (en) 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US8146902B2 (en) 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
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