TWI423369B - 濕式清洗設備用之混雜複合晶圓載具 - Google Patents

濕式清洗設備用之混雜複合晶圓載具 Download PDF

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TWI423369B
TWI423369B TW96149331A TW96149331A TWI423369B TW I423369 B TWI423369 B TW I423369B TW 96149331 A TW96149331 A TW 96149331A TW 96149331 A TW96149331 A TW 96149331A TW I423369 B TWI423369 B TW I423369B
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carrier
substrate
substrate according
supporting
frame
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TW200845271A (en
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Wing Lau Cheng
Arnold Kholodenko
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Lam Res Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/26—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/04—Layered products comprising a layer of synthetic resin as impregnant, bonding, or embedding substance
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/28—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer impregnated with or embedded in a plastic substance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S269/90—Supporting structure having work holder receiving apertures or projections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description

濕式清洗設備用之混雜複合晶圓載具
本發明係關於一種濕式清洗設備用之混雜複合晶圓載具。
【交叉參考之相關申請案】
本申請案主張優先權於2006年12月21日提出申請之美國臨時專利申請案第60/876,631號，其發明名稱為「濕式清洗設備用之混雜複合晶圓載具」(Hybrid Composite Wafer Carrier for Wet Clean Equipment)，在此併入作為參考。
本發明係關於以下美國專利及美國專利申請案，全在此併入作為參考：於2002年12月3日頒證給De Larios等人之美國專利第6,488,040號，發明名稱為「單晶圓清潔及乾燥用之毛細管近接頭」(Capillary proximity heads for single wafer cleaning and drying)；於2002年12月24日提出申請之美國專利申請案第10/330,843號，發明名稱為「彎液面、真空、異丙醇蒸氣、乾燥歧管」(Meniscus,Vacuum,IPA Vapor,Drying Manifold)；亦於2002年12月24日提出申請之美國專利申請案第10/330,897號，發明名稱為「利用彎液面、真空、異丙醇蒸氣、乾燥歧管的基板處理用之系統」(System for Substrate Processing with Meniscus,Vacuum,IPA Vapor,Drying Manifold)；於2003年3月31日提出申請之美國專利申請案第10/404,692號，發明名稱為「利用動態液體彎液面之基板處理方法與系統」(Methods and Systems for processing a Substrate Using a Dynamic Liquid Meniscus)；於2004年4月1日提出申請之美國專利申請案第10/817,620號，發明名稱為「基板彎液面形界面及其操作方法」(Substrate Meniscus Interface and Methods for Operation)；於2006年9月29日提出申請之美國專利申請案第11/537,501號，發明名稱為「用以使由處理基板用之彎月形所留下之入口及/或出口痕跡減少的支持構件」(Carrier for Reducing Entrance and/or Exit Marks Left By a Substrate－Processing Meniscus)；及於2006年12月15日提出申請之美國專利申請案第11/639,752號，發明名稱為「介面工程用之受控制的周圍系統」(Controlled Ambient System for Interface Engineering)。
在製造半導體晶片的產業中，完成一製造程序之後，會有不要的殘餘物殘留在基板的表面上，而有必要清洗及乾燥該基板。該製造程序之舉例包括電漿蝕刻(例如，鎢回蝕(WEB,tungsten etch back)及化學機械研磨(CMP)。在CMP中，基板置於一支座中，該基板一表面受該支座推擠而頂住研磨表面。該研磨表面使用一由化學物與研磨材料所組成之研漿。不幸的是，CMP製程易將研漿粒子之累積物及殘餘物殘留在基板表面上。若留在基板上，這些不要的殘留材料與粒子可導致缺陷。在某些情況下，如此缺陷可能導致基板上的裝置無法操作。在一製造程序後清洗基板去除了不要的殘餘物與微粒，避免該缺陷的發生。
一基板經濕式清洗後，該基板必須有效地乾燥，以防止水或清潔流體(於後文，「流體」)的水痕將殘餘物殘留在基板上。如讓清潔流體通常因液滴(droplets)的形成而在基板表面上蒸發，則在蒸發後，之前溶解在流體中的殘餘物或污染物將繼續留在基板表面上，形成斑點。為防止蒸發的發生，該清潔流體必須盡快地移除，以免其在基板表面上形成液滴。為了試圖達成此目的，可使用數個不同技術中的一種，例如自旋乾燥法(spin－drying)、異丙醇(IPA,isopropyl alcohol)蒸氣乾燥法、或馬蘭格尼乾燥法(Marangoni drying)。所有這些乾燥技術使用基板上某種移動液體/氣體介面，若經適當維持，則乾燥該基板時不形成液滴。不幸的是，前述所有乾燥方法通常會發生移動液體/氣體介面失效，而使液滴形成且蒸發產生，造成污染物殘留在基板表面上。
現行的基板載具並不具有如此預期的屬性組合，即在清洗及 其他處理步驟時之傳輸基板的過程中，能避免液滴在基板上形成。鑒於前述，吾人有必要改善清洗系統及方法，以在提供有效率之清洗之際，減少乾燥後流體液滴之水痕的可能性。
大體上說，為滿足前述需求，本發明在一彎液面處理基板的過程中，提供一載具結構及其製造方法來支撐晶圓。
吾人須注意到，本發明可採用眾多方式來實施，包括以製程、設備、系統、裝置或方法等方式。本發明之數個發明性實施例之敘述如下。
在一實施例中，設有一載具結構用以支撐一基板，使該基板在處理時藉輸送該載具穿過至少由一個近接頭所形成之彎液面。該載具包括一框架(frame)，該框架具有一標定大小的開口部用以接受一基板，以及數個支撐銷用以支撐在開口部內的基板，且該開口部比基板稍大，以使基板與開口部間存在一間隙(gap)。該框架包含一複合核心部(composite core)、一頂部板片(top sheet)、一底部板片(bottom sheet)、一介於頂部板片與核心部間之芳香族聚醯胺織物層(a layer of aramid fabric)、及另一介於底部板片與核心部間之芳香族聚醯胺織物層。頂部板片與底部板片由一高分子材料形成。
在另一實施例中，提供一製造載具的方法。該方法包括形成一複合框架，該框架具有一碳纖維核心部(carbon fiber core)、一頂部板片、一底部板片、一介於頂部板片與核心部間之芳香族聚醯胺織物層、及另一介於底部板片與核心部間之芳香族聚醯胺織物層。頂部板片與底部板片各由一高分子材料形成。該方法更包括形成一標定大小的開口部用以接受一基板，及設置數個延伸至開口部的支撐銷用以支撐開口部內之基板。該形成之開口部比基板稍大，以使基板與開口部間存在一間隙。
而又在另一實施例中，提供一用以製備基板之載具的製造方 法。該方法包括：形成一本體，該本體包含一具有第一面及第二面之核心材料部；於該本體中形成一開口部；對該本體施加一熱硬化循環(thermal curing cycle)，以使殘留應力最小化及減低該本體之不平坦特徵；於熱塑性層之表面上方及邊緣施加一壓力，以確保該本體之密閉；及切削該本體以界定成該載具。該核心材料部有一熱塑性層，皆形成於該核心材料部之第一面及第二面上。該開口部標定大小來接受基板。該切削製程設定為界定開口部的尺寸及載具外部的尺寸參數。
經由該發明原理之舉例說明，本發明之優點將可透過以下詳述及相配合之附圖而得知。
於下述中，將闡明眾多的特定細節以供徹底了解本發明。然而，熟悉本技藝者當可輕易得知本發明不需要下述中之某些細節亦能實施。在其他狀況下，為避免不必要地混淆本發明，已知之操作程序或實施細節不再贅述。用於此之「彎液面」(meniscus)一詞，係指一液體容積，其部份受到該液體表面張力所劃界且包容之。彎液面亦可受到控制，能以該包容的形狀在一表面上移動。在具體的實施例中，彎液面的維持係藉由送達流體至一表面上，同時亦移除該流體，俾能使該彎液面受到持續控制。再者，彎液面的形狀可藉精密流體輸送及移除系統(precision fluid delivery and removal systems)控制，該系統部分地以一可網路化之電腦系統控制器作為介面。
圖1A係一近接頭設備100之示範性實施例的立體圖。圖1B將該示範性實施例表示於平面圖中。在此範例中，基板160安置於一載具150之中，該載具包含具有一標定大小以接受基板160之中心開口部的框架。在此範例中，該載具150順著箭頭166的方向穿過上部近接頭110與下部近接頭120之間。在一實施例中，使用單一近接頭110(上部或下部)。一彎液面200因此在該近接頭 110的一表面、基板160的表面及載具150的部分表面之間形成。舉例來說，彎液面200可界定為至少與基板160的直徑同寬。在另一例中，彎液面200比基板160的直徑稍寬，以使載具150的表面邊緣(例如，至少是圍繞在基板圓周的表面邊緣)與彎液面200相接觸。在前述說明的例子中，該彎液面於上部與下部近接頭(110、120)之間形成。「上部」(upper)與「下部」(lower)之詞係用來定義一例子，其中載具150實質上水平地固持及運送基板，然而其他除水平之外的方向亦有可能。
載具150可藉由一設備來輸送，以導致載具150順著箭頭166的方向穿過上部與下部近接頭(110、120)之間。舉例來說，該輸送設備可包括圖1B所示之軌道111。軌道111可設定為接受載具150，且沿著軌道111輸送載具150。不受限地，該載具150可由馬達、螺旋傳動、皮帶傳動、磁控制器等等所控制。
在一實施例中，基板160於近接頭(110、120)一側的一第一位置置放於載具150上，於近接頭(110、120)反側的一第二位置移除。之後，載具150可由近接頭(110、120)穿過回來，或由近接頭(110、120)的上方、下方或周圍回到第一位置，以供置放下一個基板，且此程序重複進行。載具150亦可通過多重近接頭檯或其他處理檯。
載具150包括數個支撐銷152(如圖4所示)，每個支撐銷具有支撐基板與使其置中之特徵(未表示於圖中)，以確保基板160與載具150間一均等的載具基板間隙158。間隙158可受操控，俾使彎液面平穩地從載具過渡到晶圓，且再回到載具上。在一實施例中，載具150在其前緣154及後緣156具有傾率的邊緣，以防止在載具150進入及退出彎液面時，彎液面液體之容積驟然改變。舉例來說，載具150呈六邊形，其兩前緣分別與一橫向成一角度θ(如15°)，並共同形成一置中點，而相對應之兩後緣分別與一橫向成一角度θ，亦共同形成一置中點。其他不造成彎液面形狀迅速位移之形狀亦可使用，如梯形或平行四邊形，其中前後緣與載 具移動之方向成一直角之外的角度，或與彎液面200之前後緣成一角度(亦即不與其平行)。
吾人應注意到，除了在圖1之舉例中，該基板順著箭頭166的方向穿過近接頭(110、120)，亦可能使該基板保持靜止而使近接頭(110、120)從基板的上下方穿過，使基板相對於近接頭而移動。再者，基板從近接頭間穿過時的定位是隨意的。亦即，基板並不一定要用水平的定位，而可用垂直或其他任意角度的定位取代。
在特定的實施例中，一控制器控制載具150的移動及流體至上部與下部近接頭(110、120)的流動，該控制器可為功能取決於邏輯電路之一般用途或特定用途的電腦系統。該流體可由無塵室設備或容器中供應。
圖2係表示上部近接頭110的示意圖，是為下部近接頭120(圖1)的鏡像。各近接頭包括數個中心噴嘴116，形成彎液面200的液體穿過該噴嘴來供應。該液體可以是去離子水、清洗劑或其他液體用以處理、清洗或洗滌基板160。數個真空口114於彎液面200的周邊施加真空。真空口114從彎液面200及週遭流體中抽吸液體，該流體如由噴嘴112供應之空氣或其他氣體。在特定實施例中，噴嘴112可提供來圍繞或部分地圍繞真空口114，並供應異丙醇蒸氣、氮氣、以上兩者的混合氣體、或其他氣體或氣液二相流。噴嘴112及由該處供應之流體幫助維持彎液面200表面上一連貫的氣液介面相。更多有關於近接頭結構及其操作的詳細內容在前述交叉參考之相關申請案的段落中已列入作為參考。具體地，美國專利第7,234,477號、第7,240,679號及美國專利申請案第10/330,843號供作有關於近接頭結構及其操作的額外細節參考。
圖3A到3C說明基板160穿過且退出由上部與下部近接頭(110、120)所產生之彎液面200。在這些圖中，相對於上部與下部近接頭(110、120)，基板160及載具150往左方移動。在圖3A的 階段時，基板160一直延伸穿過彎液面200，以使基板160的前緣162與後緣164位於彎液面200的兩側，且彎液面200的前緣232正接近基板160的後緣164。吾人應注意到，基板160通常呈圓形狀，而圖中雖表示載具150位於彎液面200的外側，卻看不出部分之載具150可與彎液面200相接觸。
在圖3B中，彎液面200正從基板160過渡到載具150。在此階段時，後緣164位於彎液面200之內。在一實施例中，載具150的斷面可稍微比基板160的厚。舉例來說，基板160可為0.80mm厚，而載具可微約1.5mm厚。如此，當彎液面200過渡到載具150上時，一定容積的彎液面液體將遭載具150位移。圖3C中，彎液面已完全地從基板160過渡到載具150上。
圖4係表示一示範性晶圓載具150的平面圖。晶圓載具150通常是平坦的，具有一開口部151標定大小以接受處理用之晶圓。該晶圓可由數個支撐銷152支撐。在一實施例中，開口部151內設置有四個支撐晶圓用之支撐銷152。載具150亦可包括數個供一晶圓處理設備存取用之凹口153。例如，一用來將晶圓置放於載具150之中或將其從載具150取出之機器人手臂的拾取器(picker)或末端執行器(end effector)，其可包括延伸至凹口153後滑動至晶圓底下以使晶圓能被升起之指狀部(fingers)，或處理設備可在凹口153處將晶圓從其邊緣扣緊。在另一實施例中，並不需要凹口153，晶圓可先藉第一個裝置(未表示於圖中)從載具150底下將其升起，接著藉一機器人手臂的拾取器或末端執行器移除。
載具150亦包括沿著載具左右邊緣之加厚邊緣(155、157)，用以增進機械穩定度。加厚的部分(155、157)從圖5的橫剖面立體圖中更能看清楚。在一實施例中，加厚邊緣(155、157)可用於箝制或牢繫於一輸送設備(未表示於圖中)。在另一實施例中，加厚邊緣包含將載具150牢繫於輸送設備用之嵌入式磁鐵。
因載具150在支撐晶圓時穿過一可能只有約2至3厘米厚的彎液面，載具能呈薄狀、平坦及剛硬是很重要的，如此使垂直偏 轉最小化，亦即垂直於載具150表面之偏轉的最小化。該載具亦希望能抵抗用於濕式晶圓處理之腐蝕性化學劑，如氫氟酸(hydrofluoric acid)(氟化氫溶劑(hydrogen fluoride solution))。在一實施例中，載具150在除了位於沿著加厚邊緣(155、157)之加厚部分外的厚度約為1.5厘米。在一實施例中，載具150由藉輸送設備向左右兩邊緣之相背離的張力所固持，以增加載具的剛性及減少垂直偏轉。在另一實施例中，載具150形成時含有一微拱形，俾其承載晶圓或其他基板的重量時能夠平坦化(flattens out)，與平面成最小偏離。上述兩例有可能同時進行，亦即，載具可設有一微拱形用以改善承載時的平坦度，同時亦維持於張力下以進一步減少垂直偏轉。
圖6表示一載具180具有一長方形狀之設計，較適合受張力作用而減少垂直偏轉。如前述，亦可採用其他形狀，例如梯形提供一形狀用以受橫向張力，即張力向左右兩邊緣相背離，同時在載具進入彎液面200時，使彎液面流體的迅速位移最小化。
圖7係表示圖4中沿著N－N線段之載具150的橫剖面圖，誇大縱向尺度以示清楚。在一實施例中，載具150包括具有一頂部板片202與一底部板片204的外部覆蓋物，該板片由一如聚偏二氟乙烯(polyvinylidene fluoride)之熱塑性材料形成。適合載具150用之聚偏二氟乙烯板片可從賓州費城(Philadelphia,Pennsylvania)的Arkema Inc.獲得，以「Kynar」作為商標名。其他非聚偏二氟乙烯的材料亦可考慮使用。該材料曝露於惡劣的化學環境下時，必須具機械及化學穩定性或是惰性。此外，該外部材料最好是能被設成具有一期望之疏水性(hydrophobicity)，以幫助維持彎液面200的完整性(圖2至3C)。亦即，在某些製程中期望具疏水性之載具，而在其他製程中期望較具親水性之載具。材料如聚偏二氟乙烯可藉由研磨或拋光來製備，將疏水性微調至一預期之程度。頂部與底部板片(202、204)可用已知之熱塑性熔接技術或藉由黏合劑密封在一起。頂部與底部板片(202、204)的 厚度可調整至用來平衡載具150的壽命週期與平坦性需求。
載具150亦包括圖8所示之一成層結構220。該成層結構由一複合核心部222及預浸布層(224、226)形成。此外，可設置一填充材料228，該填充材料可由聚偏二氟乙烯之粉末或其硬棒(rod)形成。在一實施例中，複合核心部222包括模造之碳纖維強化複合材，例如以環氧樹脂為基材。複合核心部222之上及其之下有一或更多層的單向碳纖維環氧樹脂複合預浸布(pregreg,pre－impregnated)層224。模造的複合核心部222可用多層的碳纖維強化複合積板(sheeting)來代替。單向複合預浸材可將纖維定向為往與左右邊緣(155、157)垂直之方向延伸(圖4)。適合的碳纖維強化環氧樹脂可廣泛地以預浸之型式獲得。其他具有高強度與重量比的材料亦可考慮替代碳纖維強化環氧樹脂。在複合織物層224與頂部及底部板片(202、204)之間是數個芳香族聚醯胺織物層226。商業上，芳香族聚醯胺織物亦可廣泛地以不同織向之預浸型式獲得。從芳香族聚醯胺纖維形成的織物受益於該纖維的高強度和高彈性係數，為載具結構提供了優越的剛性(stiffness)。其他適合的材料也可代替芳香族聚醯胺纖維。此般材料需要足夠剛性以支撐基板傳輸於一個或兩個相對之近接頭之間。某些織物，如芳香族聚醯胺織物，則可預拉伸(pre－tensioned)以使其不至因開口部而實質彎曲或鬆垂。舉例來說，此預拉伸可類似於將織物拉伸過鼓皮面。材料如SiC卻不適合用此方法預拉伸。在一實施例中，此強化織物層具有與氟化氫及其他腐蝕性化學物相容之化學相容性。
在一實施例中，支撐銷152(圖7中只表示一個)被插入於填充材料224中。在一實施例中，支撐銷152由聚偏二氟乙烯或聚醚醚酮(PEEK,polyetheretherketone)製成。其他具剛性、防腐蝕性之材料亦可考慮用以形成支撐銷152。
在一實施例中，晶圓載具150的生產可藉由以下堆疊而成：一層的聚偏二氟乙烯積板、一層的芳香族聚醯胺織物、一複合核 心部包含單向碳纖維強化環氧樹脂、又一層的芳香族聚醯胺織物及又一層的聚偏二氟乙烯積板。為了將包括圖4、5中之加厚邊緣(155、157)的邊緣、轉角更精確地成形，聚偏二氟乙烯粉末可灑佈於芳香族聚醯胺織物層核心的周圍。在一實施例中，磁鐵(未表示於圖中)嵌入於加厚邊緣(155、157)中，與一磁性輸送器一同使用。在另一實施例中，加厚邊緣藉由具有一連鎖(interlocking)特徵之模造件(未表示於圖中)形成，該連鎖特徵如一凹槽用以嚙合核心部222，或核心部222不存在時嚙合複合織物層224。藉噴射鑄造或擠壓鑄造及/或切削加工，該邊緣之模造件可從聚偏二氟乙烯作成。其他適合用以作成加厚邊緣(155、157)之材料及方法亦可考慮。
壓力可施加於載具的上方及所有邊緣，以確保其密閉與平坦。在一實施例中，壓板(pressure plates)於形成時含有凹處以將加厚邊緣(155、157)壓鑄成形。另外，壓板形成時可含一微拱形以產生一弧形之載具，使載具在承載時能平坦化。同理，壓板形成時可包含其他成形特徵。
在一實施例中，當該堆疊仍受壓力時，可接受一熱硬化循環以燒結或黏合填充材料228，以使殘留應力最小化及確保平坦。在一實施例中，熱循環包括將該結構加熱至聚偏二氟乙烯的熔點，約為340℉(171℃)。如一般所知，根據特定使用之烘箱，可由烘箱溫度與元件溫度間建立校準曲線，以確定結果的一致性。硬化循環後，載具可切削至最終尺寸，接著依期望之疏水性對表面修改成一特定的粗糙度。在另一實施例中，該堆疊接受一熱硬化循環以減少殘留應力，且分開地加熱至聚偏二氟乙烯的熔點。
在一實施例中，如圖7所示之撐銷152(圖4、6)於熱硬化循環前先模造好。製造出的載具提供該載具質輕、強度高及剛度高之特性，使垂直偏轉最小化，這在濕式清洗的過程中是很關鍵的。該載具亦對氫氟酸及污染物具高抗性，該污染物包括從其他清洗成分、副產物及基板上移除之材料。用來包封核心複合結構之聚 偏二氟乙烯與芳香族聚醯胺織物的複合材能使表面修改成藉微調材料的疏水性達到其乾燥性能。複合載具之混雜構造提供額外優點，即處理時的損壞容限(damage tolerance)及運送與清洗晶圓時載具的振動阻尼(vibration damping)。
圖9係表示一流程圖300，說明製造載具150用之一示範性複合材料壓模造程。吾人應注意到，這些程序性步驟並非需要依所示之順序來進行，有些程序性步驟可同步進行。該程序起始於所示之開始方塊302，接著進行到操作步驟304，其中施加一熱硬化循環以將殘留應力與不平坦性最小化。「不平坦性」係指從設計中垂直偏離。該設計可包含一如前述之微拱形，以使載具在晶圓或其他基板的重量下平坦化。
在操作步驟306中，加熱至外部板片的熔點。此操作步驟可與操作步驟304合併。在一實施例中，外部板片由聚偏二氟乙烯形成。其具有一約為340℉(171℃)的熔點。根據使用之烘箱，烘箱溫度與元件溫度間可建立校準曲線。
在操作步驟308中，對載具上部及其所有邊緣加壓以確保密閉。該壓力可與熱循環同步施加。
在操作步驟310中，載具切削至最終尺寸。可選擇地，在操作步驟312中，可依預期疏水性所需之粗糙度而修改表面狀況。該製程方法接著結束於所示之完成方塊314。
雖然上述發明為了清楚理解而詳細敘述，吾人當可明白於隨附之申請專利範圍之範圍內，可從事特定改變及修改。因此，本實施例應被認為是舉例性而非限制性的，且本發明不受上述細節所限制，但仍可於隨附之申請專利範圍的範圍與均等者內受到修改。
100‧‧‧設備
110‧‧‧上部近接頭
111‧‧‧軌道
112‧‧‧噴嘴
114‧‧‧真空口
116‧‧‧中心噴嘴
120‧‧‧下部近接頭
150‧‧‧載具
151‧‧‧開口部
152‧‧‧支撐銷
153‧‧‧凹口
154‧‧‧前緣
155‧‧‧加厚邊緣
156‧‧‧前緣
157‧‧‧加厚邊緣
158‧‧‧間隙
160‧‧‧基板
162‧‧‧前緣
164‧‧‧後緣
166‧‧‧箭頭
180‧‧‧載具
200‧‧‧彎液面
202‧‧‧頂部板片
204‧‧‧底部板片
220‧‧‧成層結構
222‧‧‧複合核心部
224‧‧‧單向碳纖維環氧樹脂預浸布層
226‧‧‧芳香族聚醯胺預浸布層
228‧‧‧填充材料
232‧‧‧前緣
300‧‧‧流程圖
302‧‧‧開始
304‧‧‧施加熱硬化循環以將殘留應力與不平坦性最小化
306‧‧‧加熱至外部板片的熔點
308‧‧‧對載具上部及其所有邊緣加壓以確保密閉
310‧‧‧切削至最終尺寸
312‧‧‧依預期疏水性所需之粗糙度修改表面狀況
314‧‧‧完成
透過以下詳述及相配合之附圖將可容易地理解本發明，且圖中之參照數字註明與其相符之構造元件。
圖1A係一近接頭設備之示範性實施例的立體圖。
圖1B係圖1A所示之示範性實施利的平面圖。
圖2係表示上部近接頭的示意圖。
圖3A、3B及3C說明基板從由上部與下部近接頭所產生之彎液面中退出。
圖4係表示一晶圓載具之範例的平面圖。
圖5係表示圖4中該晶圓載具的橫剖面立體圖。
圖6係表示一載具呈長方形狀之範例的平面圖。
圖7係表示圖4中沿著N－N線段之該載具範例的橫剖面圖，誇大縱向尺度以示清楚。
圖8詳細表示圖7中該載具橫剖面之成層結構。
圖9係一流程圖，說明用以製造圖4至圖8中的載具之一示範性之複合模造製程。
100‧‧‧設備
110‧‧‧上部近接頭
120‧‧‧下部近接頭
150‧‧‧載具
154‧‧‧前緣
156‧‧‧前緣
158‧‧‧間隙
160‧‧‧基板
166‧‧‧箭頭

Claims (26)

  1. 一種支撐基板用之載具，用以在使載具穿過由至少一個近接頭所形成之一彎液面以進行基板處理時支撐基板，該載具包含：一框架，具有：大小設成可以接受一基板的一開口部、及數個在該開口部內支撐該基板用之支撐銷，該開口部比該基板稍大以使該基板與該開口部間有一間隙；該框架包含：一複合核心部、一頂部板片、一底部板片、及位於該頂部板片與該複合核心部之間的一層之芳香族聚醯胺織物，其中該頂部板片與該底部板片包含一高分子材料。
  2. 如申請專利範圍第1項之支撐基板用之載具，更包含一第二層之芳香族聚醯胺織物，位於該底部板片與該複合核心部之間。
  3. 如申請專利範圍第1項之支撐基板用之載具，其中該框架有一微拱形，俾使當該框架因承載一基板而受負載時，該框架實質上平坦化，使其從一平面之垂直位移最小化。
  4. 如申請專利範圍第1項之支撐基板用之載具，其中該複合核心部包含具有一環氧樹脂基材之模造碳纖維複合材料。
  5. 如申請專利範圍第1項之支撐基板用之載具，其中該複合核心部包含至少一層之單向預浸碳纖維材料。
  6. 如申請專利範圍第5項之支撐基板用之載具，其中該單向預浸碳纖維材料係配置成使得該碳纖維定向為與該載具之左右邊緣垂直。
  7. 如申請專利範圍第1項之支撐基板用之載具，其中該頂部板片與底部板片係以聚偏二氟乙烯形成。
  8. 如申請專利範圍第1項之支撐基板用之載具，其中芳香族聚醯胺織物以環氧樹脂預浸。
  9. 如申請專利範圍第1項之支撐基板用之載具，其中該載具之左右邊緣加厚以增進機械穩定性。
  10. 如申請專利範圍第1項之支撐基板用之載具，其中該載具更包含以熱塑性粉末形成之填充材料，該熱塑性粉末係於製造該載具時在一熱循環處理中予以燒結或黏合。
  11. 如申請專利範圍第1項之支撐基板用之載具，其中該支撐銷係以聚偏二氟乙烯或聚醚醚酮中之一者形成。
  12. 一種支撐基板用之載具的製造方法，該載具用以在使載具穿過由一個近接頭所形成之一彎液面以進行基板處理時支撐基板，該製造方法包含：形成一複合框架，該複合框架具有一碳纖維核心部、一頂部板片、一底部板片、位於該頂部板片與該碳纖維核心部之間的一層之芳香族聚醯胺織物、及位於該底部板片與該碳纖維核心部之間的一第二層之芳香族聚醯胺織物，該頂部板片與底部板片由一高分子材料形成，該框架具有大小設成可接受一基板之開口部，該框架並具有數個延伸入於該開口部以於該開口部內支撐該基板之支撐銷，該開口部比該基板稍大以在該基板與該開口部之間存在一間隙。
  13. 如申請專利範圍第12項之支撐基板用之載具的製造方法，其中該框架形成一微拱形，俾使當該框架因承載一基板而受負載時，該框架實質上平坦化，使其從一平面之垂直位移最小化。
  14. 如申請專利範圍第12項之支撐基板用之載具的製造方法，其中該碳纖維核心部有一環氧樹脂基材。
  15. 如申請專利範圍第14項之支撐基板用之載具的製造方法，其中，藉由從該碳纖維核心部之上方及下方增加至少一層之單向預浸碳纖維材料，而進一步形成該碳纖維。
  16. 如申請專利範圍第15項之支撐基板用之載具的製造方法，其中該單向預浸碳纖維材料之碳纖維定向為與該載具之左右邊緣垂直，該左右邊緣朝該載具移行之方向延伸。
  17. 如申請專利範圍第12項之支撐基板用之載具的製造方法，其中該頂部板片與底部板片係由聚偏二氟乙烯形成。
  18. 如申請專利範圍第12項之支撐基板用之載具的製造方法，其中該芳香族聚醯胺織物以環氧樹脂預浸。
  19. 如申請專利範圍第12項之支撐基板用之載具的製造方法，更包含模造該複合框架使其具有加厚之左右邊緣，以增進機械穩定性，該左右邊緣朝該載具移行之方向延伸。
  20. 如申請專利範圍第12項之支撐基板用之載具的製造方法，其中該載具更包含以熱塑性粉末形成之填充材料，該熱塑性粉末係於製造該載具時在一熱循環處理中燒結或黏合。
  21. 如申請專利範圍第12項之支撐基板用之載具的製造方法，其中該支撐銷以聚偏二氟乙烯或聚醚醚酮中之一者形成。
  22. 一種製備基板用之載具的製造方法，該方法包含：形成一本體，該本體包含：一核心材料，具有一第一面與一第二面，該核心材料具有形成於該核心材料的該第一面及該第二面兩面上的一層熱塑性塑膠；於該本體中形成一開口部，該開口部的大小設成可接受該基板；對該本體施加一熱硬化循環，以使殘留應力最小化及減低該本體之不平坦特徵；施加一壓力於該熱塑性層之一上部表面及邊緣，以確保該本體之密閉；及切削該本體以界定成該載具，該切削用以界定成載具之該開口部及外部大小之尺寸。
  23. 如申請專利範圍第22項之製備基板用之載具的製造方法，其中該切削更包括：整形該熱塑性層之特定部位。
  24. 如申請專利範圍第22項之製備基板用之載具的製造方法，更包含：整形該本體之部分以界定成該本體之該邊緣。
  25. 如申請專利範圍第22項之製備基板用之載具的製造方法，其中該熱硬化循環使用一溫度高達於該第一面與該第二面之該熱塑性層的熔點。
  26. 如申請專利範圍第22項之製備基板用之載具的製造方法，更包含：修改該熱塑性層的表面粗糙度以得到期望之疏水性。
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US8292697B2 (en) 2012-10-23
TW200845271A (en) 2008-11-16
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