CN101523605B - 设置有形成构成柔性机械支撑的布线元件的壳体的凹形的裸微电子芯片、制造工艺和微结构 - Google Patents
设置有形成构成柔性机械支撑的布线元件的壳体的凹形的裸微电子芯片、制造工艺和微结构 Download PDFInfo
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Abstract
微电子芯片(1)具有两个平行的主面(4、5)和侧面(6、7)。所述面(4、5、6、7)的至少之一具有设置有至少一电连接元件并且形成布线元件(10、11)的壳体的凹形。所述布线元件(10、11)同时构成经由所述连接元件的芯片(1)和外部之间的电连接,和所述芯片的柔性机械支撑。
Description
技术领域
本发明涉及包括两个平行主面和侧面的微电子芯片。
本发明还涉及这样的微电子芯片的制造方法和包括被布线元件连接的至少两个芯片的微结构。
背景技术
当前大量应用要求提供以电子功能的纤维,称为有源纺织品的制造。例如,热电纤维由温度梯度产生能量,压电纤维能够通过恢复动能而提供电子。该能量随后提供给集成于纤维的电路。
当前使用两种这样的编织物的制造技术。在其中之一,电子功能通过添加电路至编织物而获得。例如,电子功能由微电子芯片执行,该微电子芯片通过传统上被连接至其它芯片,或利用连接至可以焊接的机械元件的焊盘利用连接布线连接至电源,壳体保护电路和焊盘。能够被执行的电子功能可以是复杂的,但是集成于所述编织物中的电子芯片的机械稳定性非常差。这样的集成时间长并且要求复杂的特殊机器。此外,与芯片的有源部分相比,连接占据不可以忽略的空间。
在另一制造技术中,它仍然是实验性的,电路被印刷在编织物上,后者其支撑的作用。通常这些支撑编织物通过传统编织而获得。但是能够由这些技术实现的电子功能的复杂性非常有限并且比可以用微电子芯片所获得的低得多。
发明目的
本发明的目的包括生产表现出纤维中的改善集成的微电子芯片。
根据本发明,该目的通过所附权利要求而实现,并且更具体地通过所述芯片的至少一面包括设置有至少一电连接元件并且形成布线元件的壳体的凹形,所述布线元件同时经由所述连接元件和所述芯片的柔性机械支撑构成芯片和外部之间的电连接。
本发明的又一目的是提供微电子芯片的制造方法,其中凹形通过位于至少一侧面上的凹槽而形成。
本发明的发展是一微结构,其包括电和机械连接至少两个根据本发明的布线元件。
附图说明
从本发明的下列具体实施例仅是非限制性的示例用途和在附图中所表达的描述中,其它的优点和特征将变得更为清晰显见,其中:
图1是根据本发明的微电子芯片的第一示例实施例的截面图,
图2是根据本发明的微电子芯片的第二示例实施例的截面图,
图3至5示出了根据图2的芯片的制造方法的不同步骤,
图6代表根据图2的芯片的制造的替代实施例的截面图,
图7和8示出了根据本发明的芯片的制造的两个其它实施例,
图9和10示出了根据本发明的芯片的制造方法的另一实施例,
图11至13示出了根据本发明的芯片的制造方法的另一实施例,
图14示出了根据本发明的芯片,其中布线元件平行于芯片的主面,
图15至17示出了根据本发明的芯片,其中布线元件垂直于芯片的主面。
具体实施方式
在图1中,微电子芯片1的第一示例包括以传统方式设置有至少一微电子元件3的平衬底2。微电子芯片1因而具有相互平行的,通过形成芯片1的边的侧面连接的两个主面4和5。仅有两个侧面6、7被表示,但是其数量可以变化并且取决于主面4、5的轮廓的形状。
如图1中所示出的,各侧面6、7为平行于主面4和5的槽的形式并且构成分别被对于侧面6、7用8和9所指示的凹槽,并且使得布线元件可以被容纳。容纳凹槽8、9分别呈现凹的截面。在图1中所示出的具体实施例中,凹槽8、9的宽度等于侧面6、7的高度并且其界面为圆弧的形式,即C形。C形可以精确为直线部或近似于直线部。
凹槽8和9可以通过任何合适的技术生产,例如通过干法或湿法蚀刻、激光切削、激光辅助化学蚀刻、机加工等。
微电子芯片1可以因而容易地被集成于编织物中,因为两个相邻的布线丝10、11,例如构成该编织物的纬线(filling thread)可以或者通过织工艺(weaving process)或者编工艺(knitting process)被自动地插入容纳凹槽8、9。容纳凹槽8、9保证微电子芯片1对于编织物的机械稳定性。清楚的是,将试图使容纳凹槽8、9的曲率半径适合于丝10、11的直径。对于弯曲的纤维可以设想相似的凹槽。
作为替代,凹槽8、9可被涂覆以导电层,分别为12、13。该布置使得能够使用导电的纬线或弯曲丝10、11,保证与这些丝10、11的电接触。该丝可以随后被用于对于微电子元件3的供电并且还可以用于单元/数据多路技术的数据传输。纤维还可以构成辐射天线元件(发射或接收)。导电层12、13可以以传统方式利用垂直于主面4、5的穿通通孔14或利用沉积于设置有元件3的导电衬底2的表面上的导电轨15而电连接至微电子元件3,从而将层13连接至元件3的接触。
在替代的实施例中,容纳凹槽8、9可以具有V形或截头的V形截面。在后面的情形,各凹槽8、9包括两个被平底相互连接的会聚壁。
在图2中所示出的实施例中,微电子芯片1通过两个基本梯形截面的基本芯片16a和16b形成,每个基本芯片包括相互被倾斜的平侧面19a或19b连接的小基底17a或17b和大基底18a或18b。对于各基本芯片16a、16b,倾斜的平侧面19a或19b形成对于大基底18a或18b的锐角,并且是会聚的。微电子元件23a、23b位于各基本芯片16a、16b的小基底17(分别是17a、17b)的层。基本芯片16a、16b经由其小基底17a、17b以这样的方式被固定,使得其倾斜侧面19a、19b形成至少一容纳凹槽。在图2中,表示了两个容纳凹槽20和21。容纳凹槽20、21因此表现出V形截面(更具体地是图2中的截头V形截面)并且构成微电子芯片1的侧面6和7。大基底18a、18b平行并且形成图2的微电子芯片1的主面5、6。容纳凹槽20、21可以以与图1的微电子芯片1相同的方式容纳丝10和11。
基本芯片16a和16b例如通过胶合被相互组装,粘接剂层22则被设置在小基底17a、17b之间。粘接剂可以是或者绝缘、导电或者电活化的树脂。当进行该组装时,通过选择性地沉积树脂,利用利用电活性树脂插入,可以实现微电子元件23a、23b之间的电连接和/或压力探测或能量产生(压电)功能。基本芯片16a、16b的组装也可以通过分子结合而进行。在后者的情 形,不存在粘接剂层22。
容纳凹槽20、21被涂覆以导电层,导电层分别是24、25,沉积于倾斜平侧面19a、19b上。该布置使得导电的纬线或经线的丝10、11可以被使用并且保证与这些丝10、11的电接触。导电层24、25以传统方式电连接至微电子元件23a、23b,例如通过利用导电轨26。轨26可能在层24、25的沉积期间,可以由与层24、25相同的材料制成。
在通过电活性聚合物树脂(其使得可以构成局部能量源)实现胶合的情形,层24、25可以被省略。否则,丝10、11可以被分配于不同于供电的电子功能,并且层24、25被分配给供电之外的其它功能。
作为替代,微电子元件23a、23b可以在大基底18a、18b的水平形成。这样的元件可以随后利用穿通通孔(未在图2中示出)与导电层24、25电连接。
图2的微电子芯片1可以通过在图3至5中所示出的制造方法获得。在第一步(图3)中,通过各自包括两个会聚壁29a、29b的V形槽28分离的多个基本芯片16a在一和相同的第一晶片27上同时被制造。各凹槽28形成于其中形成小基底17的晶片27的表面中。凹槽28的壁29a、29b通过平底30连接,平底30平行于其中形成小基底17的晶片27的表面。制造了两个平行槽28的网络。两个网络的槽28相互成直角。以这种方式,网络之一的一对相邻槽28,与另一网络的一对相邻槽28结合,描绘矩形或正方形的小基底17。基本芯片16a在晶片27的平面中以行和列布置。微电子元件形成于各小基底17的水平。图3以截面图示出了被槽28分离的两个相邻的基本芯片16a。第二相似的晶片33(在图5中被示出)包括多个基本芯片16b。
在下一步骤中(图4),导电材料被沉积于形成小基底17的晶片27的表面上,以便在各基本芯片16a中形成布置在微电子元件3和相邻凹槽28的壁29a之间的第一接触31,和布置在元件3和平行的相邻凹槽28的壁29b之间的第二接触32。也可以对于垂直网络的凹槽28的壁实现这样的接触(未被示出)。
在后续的步骤中(图5),包括基本芯片16a的晶片27与包括基本芯片16b的晶片33结合。晶片27和33经由其包括凹槽28的面结合,使得凹槽28被叠置。用这种方式实现的组件包括根据图2的多个微电子芯片1。这些微电子芯片1排列为由晶片27和33的凹槽28的平底30相互分离的行和列。 对于各微电子芯片1,用于结合的材料构成图2的粘接层22。晶片27和33的组装也可以通过分子结合而进行。在后面的情形,没有粘接层22。晶片27、33的后表面(与形成凹槽28的面相反)的平坦化可以选择性地进行从而减薄以此方式形成的微电子芯片1。
在最后的步骤中,相互结合的晶片27、33在凹槽28的水平被切割以便相互分离微电子芯片1。该切割可以通过任何合适的技术进行,例如通过用圆形钻石锯锯,通过干法或湿法蚀刻,通过激光切削、激光辅助化学蚀刻等。
图6示出了根据图2的芯片1的替代实施例。在该替代实施例中,基本芯片16a、16b的微电子元件23a、23b在大基底18a、18b的水平形成。各基本芯片16a、16b的小基底17a、17b包括平行于V形容纳凹槽20、21的附加凹槽34a、34b。附加凹槽34a、34b被叠置以便形成布线元件的附加的壳体,例如插入在丝10和11之间的布线35。附加凹槽34a、34b被涂覆以分别是36a、36b的导电层,该导电层连接至电子器件23a或23b,利用通孔37a或37b联系。
由于微电子元件23a、23b的布置,后者可以,如同前述,通过通孔38a、38b或通过导电轨39a、39b连接至导电层24、25。
布线35可以被设计为进行两个微电子芯片1之间的直接互连或者构成通过发射金属布线的天线。布线35还可以是压电纤维以便构成电源。
在上面刚刚描述的所有替代实施例中,丝和布线10、11、35和容纳凹槽8、9、20、21以及附加凹槽34a、34b之间的接触可以通过采取导电粘接剂而被改善,例如当两个元件接触时采用网状或聚合的两个元件。布线和丝10、11、35随后被涂覆以元件之一而其它元件被沉积在凹槽8、9、20、21、34a、34b中。
布线元件可以通过任何其它方式被固定,例如通过添加金属、通过等离子体、电解、超声焊接等被焊接。
在本发明的另一实施例中,微电子芯片1包括至少一凹形8、9,即在其主面4、5之一中的槽或孔。这使得它以称为平行的模式,被集成在例如编织物中,即在其对于芯片的固定的紧邻的布线元件10、11的轴基本平行于微电子芯片1的主面4、5。
如图7中所示出的,包括例如由硅制成的平衬底2的微电子芯片1被提供以至少一微电子元件3。芯片1包括至少一凹形8、9,例如沟槽或非贯穿 孔,或者在前面5上,即在包括微电子元件3的面上,或者在基本平行于前面的后面4上制造。这些凹形8、9起提供芯片1和对于其芯片1被固定的布线元件10、11之间的机械连接的作用。凹形8、9的形状和尺寸取决于布线元件10、11的机械和尺寸特性。例如,代表凹截面,例如正方形或圆形,V形或截头V形截面的凹槽可以被使用。
在优选实施例中,为了保证芯片1良好地被固定于属于例如其上芯片要被集成的纤维的布线元件,固定化合物,例如粘接剂可以被使用。
通过在芯片1的凹形8、9中夹紧至少一布线元件10、11的固定保证芯片和布线元件之间在芯片级上的刚性机械连接。布线元件随后形成贴附于其的两个芯片之间的柔性机械连接。
芯片优选提供导电表面,在凹形8、9内,形成电连接元件。布线元件10、11形成芯片1的柔性机械支撑,随后同时构成芯片1和外部之间的电连接。以这种方式,芯片1的微电子元件3电连接至布线元件10、11,随后可以供电和/或与其它也机械和电连接至布线元件10、11的芯片1通信。
作为替代的实施例,布线元件10、11可以通过作为通信天线(发射和/或接收)的芯片1而被使用。
以传统方式,多个微电子芯片1在衬底2上同时被制造。至少一凹形8、9在各芯片1上被制造,从而可以夹紧其中的布线元件10、11。
凹形8、9,例如以凹槽的形式,可以通过化学蚀刻,例如利用KOH溶液,或者通过等离子蚀刻或通过锯而实现。凹槽8、9的尺寸的选择根据集成于凹槽8、9中的布线元件10、11的特性而进行以便保证尽可能好的机械强度。凹槽的深度和宽度可以典型地在20μm和100μm之间变化,用于集成在凹槽中的大约20μm至100μm直径的布线元件。此外,凹槽的凸缘可以被减薄以便给予其使得布线元件可以被力夹紧的柔性。减薄例如利用形成于凹形的各侧上并且在另一实施例中的图15中所示出的两个切口(notch)而实现。
凹槽8、9的深度可以是
-或者小于或等于布线元件的直径以便使其与表面齐平,
-或者大约或等于布线元件的直径以便获得用于夹紧的凸缘的更大的柔性。
在其中槽8、9形成于前面5的情形,它们被制造于微电子元件3中或 接近于微电子元件3(图7)。在后面的情形,凹形8、9被电连接至芯片的微电子芯片3用于芯片1与外部的电通信。微电子元件3和凹形8、9之间的电连接以传统方式通过合适的方法进行,例如通过采用喷墨,丝网印刷或使用导电粘接剂而制造金属轨。
布线元件10、11,例如属于纤维,随后被夹紧,优选用力在槽8、9中。当布线元件10、11必须进行与微电子芯片1之间的电通信时,任何布线元件10、11的导电材料与微电子芯片1的不希望的区的任何接触都必须被避免。在使用由导电材料制成的布线元件的情形,后者可以有利地被绝缘材料40涂覆(图7)。
在其中布线元件10、11由导电材料制成并且不包括任何具有材料涂覆时,可以以已知的方式进行与凹形8、9的底部的电绝缘。此外,如果涂覆布线元件10、11的绝缘材料40的层由热固性聚合体制成,则优选地选择热插入,以使得凹槽8、9内部布线元件10、11的夹紧和胶接容易,并且因而使得其例如在纤维中的插入容易。
在图8中所示出的替代实施例中,在布线元件已经被插入于对应的凹槽中之后,布线元件10、11的涂层被部分排除以便使得可以进行布线元件和芯片1的微电子元件3之间的电连接。绝缘材料40的层的去除通过任何已知的方式进行,例如通过用刀片刮或在夹紧期间或之后的热蠕变。与元件3之间的连接则通过覆盖布线元件的裸露部分的金属轨44的形成以及连接其至元件3的连接焊盘(未示出)而进行。这样的轨可以常规地通过喷墨、丝网印刷或导电粘接剂的沉积而获得。
在图9和10中所示出的另一替代实施例中,凹槽8、9的集成在后面4进行。以这种方式,称为“有源”面的前面5的表面被保留并且通过在主面4、5上方分布芯片1的不同的功能而则可获得更高的集成密度。如果多个布线元件10、11要被用作导电体,则它有利地用于后面4上的集成。事实上则可以使用后面集成更大数量的布线元件,例如以间隔80μm平行布线的每毫米9或10布线。
坐落在后面4上的布置在凹形8、9中的布线元件10、11有利地由导电材料制成,并且优选不被设置以绝缘材料的涂层。电接触在微电子芯片1内制造以便使得可以由坐落于后面4上的导电材料制成的布线元件10、11和坐落在前面5上的微电子元件3的连接。以这种方式,凹形8、9形成同时 构成芯片和外部之间的电连接的布线元件的壳体而同时起芯片1的柔性机械支撑的作用。
在图9中所示出的实施例中,至少一凹形8、9在后面4中制造之后,绝缘材料的层41首先被沉积于衬底上,并且随后被构图以便至少对于凹形8、9和未来用于元件3的连接的导电轨电绝缘衬底2。绝缘材料41是例如氮化硅或氧化物,具有典型地大约100至500nm的厚度。
随后(图10),导电材料42被沉积于层41上,以便制造微电子元件和凹槽的内部的电连接。导电材料42例如通过堆叠被300nm的铜所覆盖的30nm的钛而形成。常规上,该导电材料也被构图以便避免任何短路。
布线元件10、11可以随后被插入于凹形8、9中,以便例如在纤维内集成微电子芯片1。有利地,在布线元件10、11已经被插入之后,加强金属43可以被沉积,例如通过电解。加强金属43优选由镍或铜的层以典型地包括在2和30μm之间的厚度的层形成。该步骤不仅改善了前面5的元件3和后面4的布线元件10、11之间的连接,而且还使得布线元件10、11可以固定或焊接于起壳体中。
制造其中凹槽形成于后面的水平的芯片的另一方法在图11至13中示出。
如在图11中所示出的,空腔,有利地是孔,从前面5在微电子芯片1中被蚀刻并且贯穿进入衬底。孔的深度优选包括在100和200μm之间。孔典型地具有大约100μm的直径并且有利地被尖角形终止。以这种方式被实现的孔随后通过任何合适的技术,被涂覆以绝缘材料41,例如PECVD氧化硅,其具有包括例如100和300nm之间的厚度。随后优选硬导电材料42,例如镍或钨以该方式填充被覆盖的洞。因而形成的导电材料42被连接至微电子元件3。
如在图12中所示出的,凹形8,例如凹槽,从后面4开始,随后相反于孔被蚀刻。凹槽8有利地比孔宽。凹槽8的深度有利地被界定,使得来自前面的导电材料在凹槽8的底部突出,优选以10至20μm的高度,由此形成尖端。凹槽8利用任何合适的技术制造,例如通过相对于绝缘材料41选择性地蚀刻衬底2的电介质材料。
从凹槽8的底部突出的绝缘材料层41随后通过任何已知的方法被去除,例如通过等离子体蚀刻或通过湿法蚀刻。
如在图13中所示出的,布线元件10,例如由导电材料制成,有利地用绝 缘材料的层40涂覆,布线元件10随后被插入于凹槽8中以便在柔性结构内集成微电子芯片1。涂覆导电材料的绝缘膜40可以是例如清漆或热塑性聚合物。当布线元件10被插入于凹槽8中时,来自前面5的以尖端形式的突出的导电材料部42穿孔涂覆布线元件10的绝缘膜40并且由此进行布线元件10与微电子元件3的电接触。
如果涂覆布线元件10的绝缘体40是热固性聚合物,则布线优选被热插入以便方便在布线元件中导电材料42的尖端的压痕并且使得布线元件贴附在凹槽8的内侧。
在替代实施例中,如在图14中所示出的,凹形是在主面4、5之一上制造的非贯穿孔8,以便夹紧其中的布线元件10。
在称为垂直的另一实施例中,当芯片在例如纤维的柔性结构中被夹紧时,布线元件10的轴垂直于微电子芯片1的主面4、5。
在该实施例中,在图15的俯视图中所示出的,至少一贯穿凹形8、9’,例如通孔,在微电子芯片1中制造,优选在芯片的周边。该通孔8、9’可以通过任何已知的方式获得,例如通过等离子体蚀刻或通过激光。芯片1的中空的部分可以例如是正方形、V形或C形或呈现(通孔9’)具有机械固定(布线夹子)布线元件10目的的结构。通孔9’的内壁不是光滑的而是呈现尖的尖端,例如凹槽的侧面包括为割裂布线元件的绝缘外壳而设计的爪,当布线元件被插入通孔9’中并且固定布线元件时。
在图15中所示的替代实施例中,两个切口被制造在凹形9’的各侧上的凹形9’的附近,以便提对于凹形所必需的柔性,从而在布线元件10插入期间和/或布线元件10和芯片1之间的热膨胀变化期间承受应力。如在图16和17的截面图中所示出的,在使用导电布线元件10的情形,孔8、9的内部的电绝缘通过绝缘材料41,例如氧化硅或氮化硅的沉积而实现,例如通过PECVD,其具有大约1至3μm的典型厚度。绝缘材料41的层随后以已知方式被构图,从而可以接近被连接至微电子芯片1的元件3的接触焊盘。
随后进行导电材料42的沉积,例如被300nm的铜覆盖的30nm的钛或钛/镍双层。导电材料42随后被构图,使得孔的内表面电连接至元件3。
如上所述,通过加强金属43的电解的沉积可以有利地进行。加强金属将随后覆盖布线元件10和与芯片的接触区,由此保证增强的机械强度。金属层43的厚度典型地在1-30μm的范围,例如大约5μm。与其它技术相比, 电解呈现在冷态进行并且不随后构成热限制的优点。
至少两个芯片1可以被集成在至少一布线元件10上以便形成微结构或组件。该组件包括各自固定于布线元件10的芯片,芯片1通过构成柔性机械支撑的布线元件而被相互连接。在该组件中,凹形8、9进行布线元件上的微电子芯片1的机械固定,布线元件用于与外部之间的电通信和供电的目的。
组件可以包括以布线元件10、11的矩阵形式组织的多个芯片1,布线元件10、11进行不同芯片的柔性机械连接,和有利的在矩阵的两个主方向上的芯片电连接。
组件内的芯片1可以被供电和/或相互或者与外部通信,例如利用由导电材料制成的至少一布线元件或者使用光通信或者通过电磁波的通信。
一旦组件完成,组件可以被任何合适的技术至少部分密封以便保护其抵抗外部环境的侵蚀和/或实现机械强度的提高。它可以例如被密封在可以缠绕和/或未缠绕的外壳中。
几个微电子芯片1,具体地根据图1和图2,可以通过固定在两个相邻的导电布线之间而在编织物中被集成以便形成芯片组,其中各芯片与具体功能相关(能量源、能量恢复、数字数据处理等)。电源可以利用在其被连接至外部发电机的大面上的金属化的芯片而进行,例如通过夹紧系统与编织物的供电纤维接触。在该情形中芯片还可以进行相同的功能(例如压力或温度传感器)。在该情形,根据图6的芯片可以被插入在根据图1和2的两组芯片之间,以便经由布线35形成的串连总线相互连接所述芯片组。布线元件10和11可以随后起能量源的作用。也可以设想热电电源。
根据图5的微电子芯片可以被用于制造闪烁纤维。在该情形,基本芯片之一是微电池,并且其它基本芯片是控制该电池的电荷的装置和一旦到达能量阈值则使二极管发光的装置。在基本芯片之间,当纤维的运动发生时压电纤维进行能量恢复以便再充电电池。微电子芯片在编织阶段被插入,并且当存在足够的运动时纤维开始闪烁。也可以设想热电电源。
所述芯片可以是例如RFID(射频识别装置)元件并且布线则构成天线和电源两者。这些芯片可以例如用于库存管理。
根据本发明的微电子芯片尤其可以用于制造屏幕纤维。在该情形,基本芯片之一由其上布置了多色发光二极管的小阵列(例如16乘16)的蓝宝石 衬底构成。另一基本芯片包含检索要被利用串连显示的像素的存储和多路技术的软件。全息膜放置在纤维上以便通过纤维扩散所产生的光线。
根据本发明的微电子元件也可以是驱动器(例如爆炸性或非爆炸性气体产生器)。当这样的芯片以链式组装时,这样的芯片的寻址通过编织物的导电纤维进行。因而例如可以保持可充气的对象(轮胎、气球、船等)处于恒定压力。驱动也可以由微驱动器构成。
进而还可以生产构成人/机界面的挂毯或形成放置在固体介质(混凝土)中的传感器的远程供给的天线。
在使用微电子的所有领域中,装置必须被制造得尽可能紧凑。本发明可以通过垂直组装芯片从而构成紧凑的块而用于该目的,而其中芯片间的空间可以被布置(利用保持芯片间隔开的布线元件),以便改善芯片在工作中的冷却。
Claims (17)
1.一种包括侧面(6、7)、平行的前和后主面(4、5)、以及形成布线元件(10、11)的壳体的凹形的微电子芯片(1),所述布线元件(10、11)同时利用电连接元件构成所述芯片和外部之间的电连接,该芯片的特征在于,所述凹形是具有平行于主面的轴的凹槽,用于通过夹紧将所述布线元件固定在所述凹槽中,所述布线元件构成所述芯片的柔性机械支撑。
2.根据权利要求1的芯片,其特征在于导电层(12、13、24、25)至少部分涂覆所述凹形(8、9、20、21)。
3.根据权利要求1的芯片,其特征在于所述凹槽位于至少一侧面(6、7)上。
4.根据权利要求1的芯片,其特征在于所述凹槽位于至少一主面(4、5)上。
5.根据权利要求1的芯片,其特征在于所述凹槽(8、9)包括凹面、正方或圆形截面。
6.根据权利要求1的芯片,其特征在于所述凹槽(20、21)包括V形或截头V形截面。
7.根据权利要求3的芯片,其特征在于其包括第一和第二基本芯片(16a、16b),所述第一和第二基本芯片各自包括彼此平行的小基底(17a、17b)和大基底(18a、18b),小基底(17a、17b)和大基底(18a、18b)通过与大基底(18a、18b)形成锐角的至少一倾斜平侧面(19a、19b)连接,所述第一和第二基本芯片(16a、16b)通过其小基底(17a、17b)被相互固定,使得其倾斜平侧面(19a、19b)构成所述V形或截头V形凹槽(20、21)。
8.根据权利要求7的芯片,其特征在于第一和第二基本芯片(16a、16b)的小基底(17a、17b)包括平行于V形凹槽(20、21)的附加凹槽(34a、34b),所述第一和第二基本芯片(16a、16b)的附加凹槽(34a、34b)被叠置以便形成布线元件(35)的附加壳体。
9.根据权利要求4的芯片,其特征在于所述凹槽位于后主面上,一电接触从前面穿过芯片向上至所述凹形。
10.根据权利要求4的芯片,其特征在于所述凹槽位于所述主面(4、5)上,它穿过所述芯片(1)。
11.根据权利要求1的芯片,其特征在于所述凹槽的侧面以爪的形式构造。
12.根据权利要求1的芯片,其特征在于切口布置于所述凹槽的各面上。
13.一种根据权利要求1的微电子芯片(1)的制造方法,其特征在于其包括:
在相同的晶片(27、33)上,同时制造被V形凹槽(28)所分离的多个基本芯片(16a、16b),所述V形凹槽每个包括两个会聚壁(29a、29b),
沉积导电材料,在各基本芯片(16a、16b)中,形成布置在集成于所述基本芯片(16a、16b)中的微电子元件(23a、23b)和相邻凹槽(28)的壁(29a、29b)之间的至少一接触(31、32),
通过其包括凹槽(28)的面组装两个晶片(27、33),使得所述凹槽(28)被叠置,
在所述凹槽(28)的位置切割组装的晶片(27、33)。
14.一种微结构,包括连接至少两个根据权利要求1的芯片的至少一布线元件,其特征在于所述布线元件同时构成所述两个芯片之间的电连接和柔性机械连接。
15.根据权利要求14的微结构,其特征在于所述布线元件胶合在所述凹形中。
16.根据权利要求14的微结构,其特征在于所述布线元件被焊接在所述凹形中。
17.根据权利要求14的微结构,其特征在于所述布线元件被夹紧在所述凹形中。
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JP2004288680A (ja) * | 2003-03-19 | 2004-10-14 | Mitsubishi Electric Corp | 圧接型半導体装置 |
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2006
- 2006-08-29 FR FR0607588A patent/FR2905518B1/fr not_active Expired - Fee Related
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2007
- 2007-06-21 JP JP2009526145A patent/JP5059110B2/ja active Active
- 2007-06-21 ES ES07803768.6T patent/ES2539640T3/es active Active
- 2007-06-21 WO PCT/FR2007/001034 patent/WO2008025889A1/fr active Application Filing
- 2007-06-21 EP EP07803768.6A patent/EP2057687B1/fr active Active
- 2007-06-21 US US12/310,246 patent/US8093617B2/en active Active
- 2007-06-21 CN CN2007800383632A patent/CN101523605B/zh active Active
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JP2003163313A (ja) * | 2001-09-13 | 2003-06-06 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
US6646336B1 (en) * | 2002-06-28 | 2003-11-11 | Koninkl Philips Electronics Nv | Wearable silicon chip |
Also Published As
Publication number | Publication date |
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WO2008025889A1 (fr) | 2008-03-06 |
JP5059110B2 (ja) | 2012-10-24 |
EP2057687A1 (fr) | 2009-05-13 |
FR2905518B1 (fr) | 2008-12-26 |
JP2010502030A (ja) | 2010-01-21 |
ES2539640T3 (es) | 2015-07-02 |
CN101523605A (zh) | 2009-09-02 |
EP2057687B1 (fr) | 2015-04-22 |
US8093617B2 (en) | 2012-01-10 |
FR2905518A1 (fr) | 2008-03-07 |
US20090200066A1 (en) | 2009-08-13 |
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