CN101501824B - 用于形成高纵横比特征和相关联结构的选择性蚀刻化学 - Google Patents

用于形成高纵横比特征和相关联结构的选择性蚀刻化学 Download PDF

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CN101501824B
CN101501824B CN2007800288924A CN200780028892A CN101501824B CN 101501824 B CN101501824 B CN 101501824B CN 2007800288924 A CN2007800288924 A CN 2007800288924A CN 200780028892 A CN200780028892 A CN 200780028892A CN 101501824 B CN101501824 B CN 101501824B
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plasma
species
silicon
carbon
dielectric layer
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CN101501824A (zh
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马克·基尔鲍赫
特德·泰勒
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2007800288924A 2006-08-31 2007-08-20 用于形成高纵横比特征和相关联结构的选择性蚀刻化学 Active CN101501824B (zh)

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Application Number Priority Date Filing Date Title
US11/515,435 2006-08-31
US11/515,435 US7517804B2 (en) 2006-08-31 2006-08-31 Selective etch chemistries for forming high aspect ratio features and associated structures
PCT/US2007/018398 WO2008027240A2 (en) 2006-08-31 2007-08-20 Selective etch chemistries for forming high aspect ratio features and associated structures

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CN101501824A CN101501824A (zh) 2009-08-05
CN101501824B true CN101501824B (zh) 2012-02-01

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US (3) US7517804B2 (https=)
EP (1) EP2057669A2 (https=)
JP (1) JP5273482B2 (https=)
KR (1) KR101377866B1 (https=)
CN (1) CN101501824B (https=)
TW (1) TWI380362B (https=)
WO (1) WO2008027240A2 (https=)

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US8088691B2 (en) 2012-01-03
KR20090058005A (ko) 2009-06-08
WO2008027240A3 (en) 2008-05-15
TW200823993A (en) 2008-06-01
US20090159560A1 (en) 2009-06-25
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EP2057669A2 (en) 2009-05-13
TWI380362B (en) 2012-12-21
CN101501824A (zh) 2009-08-05
KR101377866B1 (ko) 2014-03-24
JP5273482B2 (ja) 2013-08-28
US7517804B2 (en) 2009-04-14
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