CN101477308B - 负型光刻胶组合物及使用其制造阵列基板的方法 - Google Patents
负型光刻胶组合物及使用其制造阵列基板的方法 Download PDFInfo
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- CN101477308B CN101477308B CN2008101906643A CN200810190664A CN101477308B CN 101477308 B CN101477308 B CN 101477308B CN 2008101906643 A CN2008101906643 A CN 2008101906643A CN 200810190664 A CN200810190664 A CN 200810190664A CN 101477308 B CN101477308 B CN 101477308B
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
实施例1 | 实施例2 | 实施例3 | 对比例1 | 对比例2 | 对比例3 | 对比例4 | |
透射率(%) | 92 | 93 | 92 | 93 | 89 | - | 88 |
颜色 | 透明 | 透明 | 透明 | 透明 | 透明 | 透明 | 黄色 |
最小曝光量(mJ/cm2) | 70 | 70 | 70 | 70 | 140 | - | 300 |
脱气(%) | 20 | 8 | 10 | 60 | 70 | 140 | 100 |
分辨率(μm) | 5 | 5 | 7 | 5 | 5 | - | 5 |
图案形状 | 良好 | 良好 | 良好 | 良好 | 良好 | - | 良好 |
残留物 | 少许 | 少许 | 少许 | 少许 | 少许 | - | 少许 |
可分离性 | 良好 | 良好 | 良好 | 良好 | 良好 | - | 良好 |
硬度 | 3H | 5H | 5H | 小于H | 3H | - | 3H |
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1246/08 | 2008-01-04 | ||
KR1020080001246A KR101430533B1 (ko) | 2008-01-04 | 2008-01-04 | 네거티브 포토레지스트 조성물 및 이를 이용한 어레이기판의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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CN101477308A CN101477308A (zh) | 2009-07-08 |
CN101477308B true CN101477308B (zh) | 2013-08-07 |
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CN2008101906643A Expired - Fee Related CN101477308B (zh) | 2008-01-04 | 2008-12-26 | 负型光刻胶组合物及使用其制造阵列基板的方法 |
Country Status (3)
Country | Link |
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US (1) | US8092981B2 (zh) |
KR (1) | KR101430533B1 (zh) |
CN (1) | CN101477308B (zh) |
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TW201235783A (en) * | 2010-12-10 | 2012-09-01 | Sumitomo Chemical Co | Photosensitive resin composition |
US20130053489A1 (en) | 2011-08-22 | 2013-02-28 | Robert R. Gallucci | Polyetherimide compositions and methods for the manufacture and use thereof |
US20130052381A1 (en) * | 2011-08-22 | 2013-02-28 | Robert R. Gallucci | Polyepoxides and epoxy resins and methods for the manufacture and use thereof |
KR20130089036A (ko) * | 2012-02-01 | 2013-08-09 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
US9012126B2 (en) | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
US8906594B2 (en) | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
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US10095110B2 (en) * | 2015-11-26 | 2018-10-09 | Jsr Corporation | Photosensitive resin composition, method for forming resist pattern, and method for producing metallic pattern |
JP2017173525A (ja) * | 2016-03-23 | 2017-09-28 | 三菱ケミカル株式会社 | 絶縁膜用感光性樹脂組成物、硬化物、および画像表示装置 |
JP2017173526A (ja) * | 2016-03-23 | 2017-09-28 | 三菱ケミカル株式会社 | 絶縁膜用感光性樹脂組成物、絶縁膜、および画像表示装置 |
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CN111801821B (zh) * | 2018-03-23 | 2024-04-02 | 日本瑞翁株式会社 | 非水系二次电池电极用粘结剂组合物、导电材料糊组合物、浆料组合物、电极和电池 |
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- 2008-01-04 KR KR1020080001246A patent/KR101430533B1/ko active IP Right Grant
- 2008-12-26 CN CN2008101906643A patent/CN101477308B/zh not_active Expired - Fee Related
- 2008-12-29 US US12/345,169 patent/US8092981B2/en active Active
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Also Published As
Publication number | Publication date |
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CN101477308A (zh) | 2009-07-08 |
KR101430533B1 (ko) | 2014-08-22 |
KR20090075405A (ko) | 2009-07-08 |
US20090176337A1 (en) | 2009-07-09 |
US8092981B2 (en) | 2012-01-10 |
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