CN101452962B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN101452962B
CN101452962B CN200810183805.9A CN200810183805A CN101452962B CN 101452962 B CN101452962 B CN 101452962B CN 200810183805 A CN200810183805 A CN 200810183805A CN 101452962 B CN101452962 B CN 101452962B
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China
Prior art keywords
film
island
semiconductor device
semiconductor
shaped
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Expired - Fee Related
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CN200810183805.9A
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English (en)
Chinese (zh)
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CN101452962A (zh
Inventor
山崎舜平
后藤裕吾
村川努
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to CN201410196055.4A priority Critical patent/CN103985763B/zh
Publication of CN101452962A publication Critical patent/CN101452962A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200810183805.9A 2007-12-03 2008-12-02 半导体装置 Expired - Fee Related CN101452962B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410196055.4A CN103985763B (zh) 2007-12-03 2008-12-02 半导体装置和显示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007312163 2007-12-03
JP2007312163 2007-12-03
JP2007-312163 2007-12-03

Related Child Applications (1)

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CN201410196055.4A Division CN103985763B (zh) 2007-12-03 2008-12-02 半导体装置和显示装置

Publications (2)

Publication Number Publication Date
CN101452962A CN101452962A (zh) 2009-06-10
CN101452962B true CN101452962B (zh) 2014-06-18

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CN200810183805.9A Expired - Fee Related CN101452962B (zh) 2007-12-03 2008-12-02 半导体装置
CN201410196055.4A Expired - Fee Related CN103985763B (zh) 2007-12-03 2008-12-02 半导体装置和显示装置

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CN201410196055.4A Expired - Fee Related CN103985763B (zh) 2007-12-03 2008-12-02 半导体装置和显示装置

Country Status (6)

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US (2) US8047442B2 (https=)
EP (1) EP2071627B1 (https=)
JP (11) JP5514429B2 (https=)
KR (2) KR101720512B1 (https=)
CN (2) CN101452962B (https=)
TW (1) TWI459542B (https=)

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TWI787452B (zh) * 2011-01-26 2022-12-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
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US9431545B2 (en) * 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6022880B2 (ja) * 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
KR20140060776A (ko) * 2012-11-12 2014-05-21 삼성디스플레이 주식회사 플렉서블 표시 장치 및 그 제조 방법
JP2014138179A (ja) * 2013-01-18 2014-07-28 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタアレイ基板及び表示装置
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US10047785B2 (en) 2013-05-21 2018-08-14 Halliburton Energy Services, Inc. Thermal securing set screws
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2015132698A1 (en) 2014-03-06 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
CN206727211U (zh) * 2014-03-28 2017-12-08 株式会社村田制作所 天线装置以及通信设备
JP6468686B2 (ja) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 入出力装置
JP2016081051A (ja) 2014-10-10 2016-05-16 株式会社半導体エネルギー研究所 機能パネル、装置、情報処理装置
KR102367251B1 (ko) * 2015-02-02 2022-02-25 삼성디스플레이 주식회사 표시 장치
US9772268B2 (en) * 2015-03-30 2017-09-26 International Business Machines Corporation Predicting semiconductor package warpage
US10325966B2 (en) 2015-07-23 2019-06-18 Semiconductor Energy Laboratory Co., Ltd. Display device, module, and electronic device
CN107134496B (zh) 2016-02-29 2019-05-31 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法、显示面板及显示装置
KR102537297B1 (ko) * 2016-07-05 2023-05-30 삼성디스플레이 주식회사 롤러블 표시 장치 및 이를 포함하는 전자 기기
JP7086582B2 (ja) * 2017-12-11 2022-06-20 株式会社ジャパンディスプレイ 表示装置
CN110299369B (zh) * 2019-07-03 2021-11-16 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
US12408414B2 (en) * 2021-07-14 2025-09-02 Micron Technology, Inc. Transistor and memory circuitry comprising strings of memory cells
CN116131094B (zh) * 2021-11-12 2025-12-05 朗美通日本株式会社 光学半导体器件

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JP6657333B2 (ja) 2020-03-04
JP5770402B2 (ja) 2015-08-26
US20090140053A1 (en) 2009-06-04
JP7660741B2 (ja) 2025-04-11
JP2023073320A (ja) 2023-05-25
JP6379250B2 (ja) 2018-08-22
TWI459542B (zh) 2014-11-01
JP2017147462A (ja) 2017-08-24
US8047442B2 (en) 2011-11-01
KR20160023740A (ko) 2016-03-03
CN101452962A (zh) 2009-06-10
US20120037993A1 (en) 2012-02-16
JP5514429B2 (ja) 2014-06-04
CN103985763A (zh) 2014-08-13
JP2015201663A (ja) 2015-11-12
CN103985763B (zh) 2018-02-06
JP7250882B2 (ja) 2023-04-03
KR20090057932A (ko) 2009-06-08
KR101693543B1 (ko) 2017-01-06
JP2020074478A (ja) 2020-05-14
EP2071627A2 (en) 2009-06-17
JP2018195843A (ja) 2018-12-06
JP7471488B2 (ja) 2024-04-19
JP6968214B2 (ja) 2021-11-17
JP5719910B2 (ja) 2015-05-20
JP2024091705A (ja) 2024-07-05
JP2025096323A (ja) 2025-06-26
JP2009158936A (ja) 2009-07-16
TW200943540A (en) 2009-10-16
JP2015111744A (ja) 2015-06-18
JP2014075594A (ja) 2014-04-24
US8272575B2 (en) 2012-09-25
KR101720512B1 (ko) 2017-03-28
JP2022009486A (ja) 2022-01-14
EP2071627A3 (en) 2012-11-28
EP2071627B1 (en) 2014-06-11

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