CN101436592B - 半导体集成电路 - Google Patents
半导体集成电路 Download PDFInfo
- Publication number
- CN101436592B CN101436592B CN200810175396.8A CN200810175396A CN101436592B CN 101436592 B CN101436592 B CN 101436592B CN 200810175396 A CN200810175396 A CN 200810175396A CN 101436592 B CN101436592 B CN 101436592B
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- China
- Prior art keywords
- output signal
- resistive element
- mos transistor
- pads
- thyristor
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 230000003071 parasitic effect Effects 0.000 claims description 20
- 238000010586 diagram Methods 0.000 description 25
- 239000000758 substrate Substances 0.000 description 23
- 101100215778 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) ptr-1 gene Proteins 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-293233 | 2007-11-12 | ||
JP2007293233 | 2007-11-12 | ||
JP2007293233A JP5232444B2 (ja) | 2007-11-12 | 2007-11-12 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101436592A CN101436592A (zh) | 2009-05-20 |
CN101436592B true CN101436592B (zh) | 2013-02-06 |
Family
ID=40623477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810175396.8A Active CN101436592B (zh) | 2007-11-12 | 2008-11-12 | 半导体集成电路 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8194369B2 (zh) |
JP (1) | JP5232444B2 (zh) |
CN (1) | CN101436592B (zh) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5232444B2 (ja) * | 2007-11-12 | 2013-07-10 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP5479799B2 (ja) * | 2009-07-23 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8228651B2 (en) * | 2009-07-31 | 2012-07-24 | Hynix Semiconductor Inc. | ESD protection circuit |
US9520486B2 (en) | 2009-11-04 | 2016-12-13 | Analog Devices, Inc. | Electrostatic protection device |
US10199482B2 (en) | 2010-11-29 | 2019-02-05 | Analog Devices, Inc. | Apparatus for electrostatic discharge protection |
KR101195270B1 (ko) | 2011-04-11 | 2012-11-14 | 에스케이하이닉스 주식회사 | 불량모드 방지회로 |
EP2515428B1 (en) * | 2011-04-21 | 2015-10-07 | Sandeep Taneja | High efficiency switching apparatus for dynamically connecting or disconnecting mutually coupled inductive coils |
US8816389B2 (en) | 2011-10-21 | 2014-08-26 | Analog Devices, Inc. | Overvoltage and/or electrostatic discharge protection device |
US8803193B2 (en) * | 2011-05-11 | 2014-08-12 | Analog Devices, Inc. | Overvoltage and/or electrostatic discharge protection device |
KR101392587B1 (ko) * | 2013-02-19 | 2014-05-27 | 주식회사 동부하이텍 | 고전압 정전기 방전 보호 소자 |
US9281682B2 (en) * | 2013-03-12 | 2016-03-08 | Micron Technology, Inc. | Apparatuses and method for over-voltage event protection |
US9614367B2 (en) * | 2013-09-13 | 2017-04-04 | Stmicroelectronics Sa | Electronic device for ESD protection |
JP5749821B2 (ja) * | 2014-02-13 | 2015-07-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102140734B1 (ko) * | 2014-05-14 | 2020-08-04 | 삼성전자주식회사 | 정전 보호 회로를 포함하는 반도체 장치 및 그것의 동작 방법 |
US9698789B2 (en) | 2014-09-08 | 2017-07-04 | Novatek Microelectronics Corp. | Integrated circuit |
TWI555332B (zh) * | 2014-09-08 | 2016-10-21 | 聯詠科技股份有限公司 | 積體電路 |
US9484739B2 (en) | 2014-09-25 | 2016-11-01 | Analog Devices Global | Overvoltage protection device and method |
US10181719B2 (en) | 2015-03-16 | 2019-01-15 | Analog Devices Global | Overvoltage blocking protection device |
JP2017216325A (ja) * | 2016-05-31 | 2017-12-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
US10861845B2 (en) * | 2016-12-06 | 2020-12-08 | Analog Devices, Inc. | Active interface resistance modulation switch |
TWI735766B (zh) | 2017-03-24 | 2021-08-11 | 美商江森自控技術公司 | 馬達組件、利用該馬達組件之冷卻器組件及穩定馬達的方法 |
CN108364947A (zh) * | 2018-02-02 | 2018-08-03 | 苏州晶讯科技股份有限公司 | 一种半导体电压浪涌保护器件 |
KR20190133964A (ko) * | 2018-05-24 | 2019-12-04 | 삼성전자주식회사 | 반도체 장치 및 이를 포함하는 반도체 패키지 |
DE102019121374B4 (de) * | 2018-08-17 | 2021-06-24 | Analog Devices Global Unlimited Company | Fehlertoleranter Schalter mit geringem Leckverlust, Halbleiter-Die mit fehlertolerantem Schalten und Verfahren zum fehlertoleranten Schalten |
US10581423B1 (en) * | 2018-08-17 | 2020-03-03 | Analog Devices Global Unlimited Company | Fault tolerant low leakage switch |
US10958067B2 (en) * | 2018-09-19 | 2021-03-23 | Xilinx, Inc. | Single event latch-up (SEL) mitigation detect and mitigation |
CN109752612B (zh) * | 2018-12-29 | 2021-03-16 | 西安紫光国芯半导体有限公司 | 一种芯片esd保护电路的仿真电路和方法 |
US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
CN110336262B (zh) * | 2019-07-10 | 2021-11-12 | 上海艾为电子技术股份有限公司 | 一种浪涌保护电路 |
JP2021022687A (ja) * | 2019-07-30 | 2021-02-18 | セイコーエプソン株式会社 | 静電気保護回路 |
CN113540070B (zh) * | 2020-04-20 | 2023-12-12 | 长鑫存储技术有限公司 | 静电保护电路 |
EP4020551A4 (en) * | 2020-05-12 | 2022-12-28 | Changxin Memory Technologies, Inc. | ELECTROSTATIC PROTECTION CIRCUIT |
CN112802841B (zh) * | 2021-04-08 | 2021-07-09 | 成都蓉矽半导体有限公司 | 一种具有密勒钳位功能的功率mosfet |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1702860A (zh) * | 2004-05-25 | 2005-11-30 | 株式会社东芝 | 静电保护电路及使用它的半导体集成电路器件 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4806903A (en) * | 1986-12-15 | 1989-02-21 | Ford Motor Company | Backlite assembly for an automotive vehicle |
US5561577A (en) * | 1994-02-02 | 1996-10-01 | Hewlett-Packard Company | ESD protection for IC's |
US5663707A (en) * | 1995-04-11 | 1997-09-02 | Bartilucci; Gary M. | Signalling light visible through a rear view window of a vehicle |
US5905434A (en) * | 1997-12-08 | 1999-05-18 | Steffan; Paul J. | Vehicle communication device |
US6618233B1 (en) * | 1999-08-06 | 2003-09-09 | Sarnoff Corporation | Double triggering mechanism for achieving faster turn-on |
JP3983067B2 (ja) * | 2001-03-19 | 2007-09-26 | Necエレクトロニクス株式会社 | 半導体集積回路の静電保護回路 |
US6553285B1 (en) * | 2001-10-25 | 2003-04-22 | Reslan Bahmad | Message conveying system for motor vehicles |
JP4008744B2 (ja) * | 2002-04-19 | 2007-11-14 | 株式会社東芝 | 半導体装置 |
JP3908669B2 (ja) * | 2003-01-20 | 2007-04-25 | 株式会社東芝 | 静電気放電保護回路装置 |
US7245466B2 (en) * | 2003-10-21 | 2007-07-17 | Texas Instruments Incorporated | Pumped SCR for ESD protection |
US7162840B1 (en) * | 2003-12-02 | 2007-01-16 | Executive Coach Builders, Inc. | Window assembly and lighting assembly therefor |
JP2007531284A (ja) * | 2004-03-23 | 2007-11-01 | サーノフ コーポレーション | ソース/バルク・ポンピングを使用してゲート酸化膜を保護するための方法および装置 |
JP2008502300A (ja) | 2004-06-08 | 2008-01-24 | サーノフ コーポレーション | 電流制御型静電放電保護を提供する方法および装置 |
WO2006066159A2 (en) * | 2004-12-15 | 2006-06-22 | Sarnoff Corporation | Device having a low-voltage trigger element |
JP4504850B2 (ja) * | 2005-03-17 | 2010-07-14 | パナソニック株式会社 | 半導体集積回路装置 |
JP4746346B2 (ja) * | 2005-04-28 | 2011-08-10 | 株式会社東芝 | 半導体装置 |
JP5232444B2 (ja) * | 2007-11-12 | 2013-07-10 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
-
2007
- 2007-11-12 JP JP2007293233A patent/JP5232444B2/ja active Active
-
2008
- 2008-11-06 US US12/289,904 patent/US8194369B2/en active Active
- 2008-11-12 CN CN200810175396.8A patent/CN101436592B/zh active Active
-
2012
- 2012-06-01 US US13/486,940 patent/US20120243134A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1702860A (zh) * | 2004-05-25 | 2005-11-30 | 株式会社东芝 | 静电保护电路及使用它的半导体集成电路器件 |
Also Published As
Publication number | Publication date |
---|---|
CN101436592A (zh) | 2009-05-20 |
JP5232444B2 (ja) | 2013-07-10 |
US8194369B2 (en) | 2012-06-05 |
US20090122452A1 (en) | 2009-05-14 |
US20120243134A1 (en) | 2012-09-27 |
JP2009123751A (ja) | 2009-06-04 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Publication of corrected invention patent application |
Correction item: Claims Correct: Correctness (submitted in November 20, 2012) False: Error (submitted on 06 2012 14) Number: 06 Volume: 29 |
|
CI03 | Correction of invention patent |
Correction item: Claims Correct: Correctness (submitted in November 20, 2012) False: Error (submitted on 06 2012 14) Number: 06 Page: Description Volume: 29 |
|
ERR | Gazette correction |
Free format text: CORRECT: CLAIMS; FROM: ERROR (SUBMITTED ON JUNE 14, 2012) TO: CORRECT (SUBMIT ON NOVEMBER 20, 2012) |
|
RECT | Rectification | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |