CN101436547B - 高散热性封装基板的制作方法 - Google Patents

高散热性封装基板的制作方法 Download PDF

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Publication number
CN101436547B
CN101436547B CN2008103045916A CN200810304591A CN101436547B CN 101436547 B CN101436547 B CN 101436547B CN 2008103045916 A CN2008103045916 A CN 2008103045916A CN 200810304591 A CN200810304591 A CN 200810304591A CN 101436547 B CN101436547 B CN 101436547B
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layer
several
substrate
openings
resistance layer
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CN101436547A (zh
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林文强
王家忠
陈振重
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Yuqiao Semiconductor Co Ltd
Bridge Semiconductor Corp
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Yuqiao Semiconductor Co Ltd
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Abstract

一种高散热性封装基板的制作方法，以铜核基板为基础，开始制作封装基板，其结构包括数个球侧电性接脚接垫、一厚铜蚀刻线路及至少一增层线路。电性接脚接垫与厚铜线路由铜核基板的两面分别蚀刻而成，且各增层线路与厚铜蚀刻线路的连接以数个电镀盲、埋孔所导通。因此利用于厚铜蚀刻线路时能具选择性地保留位于置晶位置下方的厚铜，以及增层线路上所形成的凹槽结构，使芯片能与下方金属接垫直接结合，以提供芯片运作时良好的散热结构，进而有效地增加组件的散热效果；同时，并可以高密度增层线路提供电子组件相连时所需的绕线，因此可有效改善超薄核层基板板弯翘问题及简化传统增层线路板的制作流程。

Description

高散热性封装基板的制作方法
技术领域：
本发明涉及一种高散热性封装基板的制作方法，尤指一种以铜核基板为基础，开始制作封装基板的制作方法，于其中，该封装基板的结构包括复数个球侧电性接脚接垫、一厚铜蚀刻线路及至少一增层线路。
背景技术：
在一般多层封装基板的制作上，其制作方式通常是由一核心基板开始，经过钻孔、电镀金属、塞孔及双面线路制作等方式，完成一双面结构的内层核心板，之后再经由一线路增层制程完成一多层封装基板。如图21所示，其为一有核层封装基板的剖面示意图。首先，准备一核心基板60，其中，该核心基板60由一具预定厚度的芯层601及形成于此芯层601表面的线路层602所构成，且该芯层601中形成有复数个电镀导通孔603，可藉以连接该芯层601表面的线路层602。
接着如图22～图25所示，对该核心基板60实施线路增层制程。首先，是于该核心基板60表面形成一第一介电层61，且该第一介电层61表面并形成有复数个第一开口62，以露出该线路层602；之后，以无电电镀与电镀等方式于该第一介电层61外露的表面形成一晶种层63，并于该晶种层63上形成一图案化阻层64，且其图案化阻层64中并有复数个第二开口65，以露出部份欲形成图案化线路的晶种层63；接着，利用电镀的方式于该第二开口65中形成一第一图案化线路层66及复数个导电盲孔67，并使其第一图案化线路层66得以透过该复数个导电盲孔67与该核心基板60的线路层602做电性导通，然后再进行移除该图案化阻层64与蚀刻，待完成后形成一第一线路增层结构6a。同样地，该法可于该第一线路增层结构6a的最外层表面再运用相同的方式形成一第二介电层68及一第二图案化线路层69的第二线路增层结构6b，以逐步增层方式形成一多层封装基板。然而，此种制作方法有布线密度低、层数多及流程复杂等缺点。
另外，亦有利用厚铜金属板当核心材料的方法，可于经过蚀刻及塞孔等方式完成一内层核心板后，再经由一线路增层制程以完成一多层封装基板。如图26～图28所示，其为另一有核层封装基板的剖面示意图。首先，准备一核心基板70，该核心基板70是由一具预定厚度的金属层利用蚀刻与树脂塞孔701以及钻孔与电镀通孔702等方式形成的单层铜核心基板70；之后，利用上述线路增层方式，于该核心基板70表面形成一第一介电层71及一第一图案化线路层72，藉此构成一具第一线路增层结构7a。该法亦与上述方法相同，可再利用一次线路增层方式于该第一线路增层结构7a的最外层表面形成一第二介电层73及一第二图案化线路层74，藉此构成一第二线路增层结构7b，以逐步增层方式形成一多层封装基板。然而，此种制作方法不仅其铜核心基板制作不易，而且由于与上种方法相同，因此，具有布线密度低及流程复杂等缺点。故一般无法符合使用者于实际使用时所需。
发明内容：
本发明所要解决的技术问题是：针对上述现有技术的不足，提供一种高散热性封装基板的制作方法，使用本方法所制造的高散热性封装基板，可有效达到改善超薄核层基板板弯翘问题、及简化传统增层线路板制作流程的目的。
本发明的次要目的在于，从一铜核基板为基础，开始制作的封装基板。其结构包括复数个球侧电性接脚接垫、一厚铜蚀刻线路及至少一增层线路。于其中，电性接脚接垫与厚铜线路由铜核基板的两面分别蚀刻而成，且各增层线路与厚铜蚀刻线路连接的方式以复数个电镀盲、埋孔所导通。
本发明的另一目的在于，制作厚铜蚀刻线路时能具选择性地保留位于置晶位置下方的厚铜，以提供置晶接垫，在该置晶接垫与增层线路上所形成的凹槽结构位置相符下，可使置晶时芯片能与下方金属接垫直接结合，以提供芯片运作时良好的散热结构，进而有效地增加组件的散热效果；同时，并可以其具有的高密度增层线路提供电子组件相连时所需的绕线。
为了解决上述技术问题，本发明所采用的技术方案是：一种高散热性封装基板的制作方法，其至少包含下列步骤：
A、提供一铜核基板；
B、分别于该铜核基板的第一面上形成第一阻层，以及于该铜核基板的第二面上形成完全覆盖状的第二阻层，于其中，该第一阻层上形成数个第一开口，并显露其下该铜核基板的第一面；
C、于数个第一开口下方形成数个第一凹槽；
D、移除该第一阻层及该第二阻层，形成具有第一线路层的铜核基板；
E、于数个第一凹槽内形成第一电性阻绝层，并显露该第一线路层；
F、于该第一线路层与该第一电性阻绝层上形成第一介电层及第一金属层，于其中，该第一介电层及该第一金属层形成有数个定义置晶位置的中空凹槽，该中空凹槽下方显露该第一线路层，且该中空凹槽与第一线路层上的置晶接垫位置相符；
G、该第一金属层与该第一介电层上形成数个第二开口，并显露其下的第一线路层；
H、于该铜核基板的第二面上形成第三阻层；
I、于数个第二开口中及数个中空凹槽所显露的第一线路层上形成第二金属层；
J、移除该第三阻层；
K、分别于该第二金属层上形成一第四阻层，以及于该铜核基板的第二面上形成一完全覆盖状的第五阻层，其中，该第四阻层上形成数个第三开口，并显露其下的第二金属层；
L、移除该第三开口下方的第二金属层及第一金属层；
M、移除该第四阻层及该第五阻层，并形成一由第一金属层和第二金属层组成的第二线路层，至此，完成一具有铜核基板支撑的双层线路基板，并直接进行步骤N；以及
N、于该双层线路基板上进行置晶侧线路层与球侧电性接脚接垫的制作，于其中，在该第二线路层表面形成第一防焊层，且在该第一防焊层上形成数个第四开口，以显露第二线路层作为电性连接垫的部分，接着再分别于该第一防焊层上形成完全覆盖状的第六阻层，以及于该铜核基板的第二面上形成第七阻层，并且在该第七阻层上形成数个第五开口，以显露其下该铜核基板的第二面，之后于数个第五开口上形成数个第二凹槽，并显露数个第五开口下方的第一电性阻绝层或第一线路层，接着再移除该第六阻层及该第七阻层，以形成数个柱状接脚，之后并于数个第二凹槽内形成第二电性阻绝层，以显露球侧数个电性接脚接垫，最后，分别于数个第四开口上形成第一阻障层，以及于数个电性接脚接垫上形成第二阻障层，该第一、二阻障层为电镀镍金或无电镀镍金或电镀银或电镀锡，至此，完成一封装基板。
如此，利用于厚铜蚀刻线路时所选择性地保留位于置晶位置下方的厚铜，以及增层线路上所形成的中空凹槽，可使芯片能与下方金属接垫直接结合，以提供芯片运作时良好的散热结构，进而有效地增加组件的散热效果；同时，并可以其高密度增层线路提供电子组件相连时所需的绕线，因此，可有效改善超薄核层基板板弯翘问题及简化传统增层线路板的制作流程。
附图说明：
图1是本发明的制作流程示意图。
图2是本发明一实施例的封装基板的剖面示意图一。
图3是本发明一实施例的封装基板的剖面示意图二。
图4是本发明一实施例的封装基板的剖面示意图三。
图5是本发明一实施例的封装基板的剖面示意图四。
图6是本发明一实施例的封装基板的剖面示意图五。
图7是本发明一实施例的封装基板的剖面示意图六。
图8是本发明一实施例的封装基板的剖面示意图七。
图9是本发明一实施例的封装基板的剖面示意图八。
图10是本发明一实施例的封装基板的剖面示意图九。
图11是本发明一实施例的封装基板的剖面示意图十。
图12是本发明一实施例的封装基板的剖面示意图十一。
图13是本发明一实施例的封装基板的剖面示意图十二。
图14是本发明一实施例的封装基板的剖面示意图十三。
图15是本发明一实施例的封装基板的剖面示意图十四。
图16是本发明一实施例的封装基板的剖面示意图十五。
图17是本发明一实施例的封装基板的剖面示意图十六。
图18是本发明一实施例的封装基板的剖面示意图十七。
图19是本发明一实施例的封装基板的剖面示意图十八。
图20是本发明一实施例的封装基板的剖面示意图十九。
图21是已知有核层封装基板的剖面示意图。
图22是已知实施线路增层的剖面示意图一。
图23是已知实施线路增层的剖面示意图二。
图24是已知实施线路增层的剖面示意图三。
图25是已知实施线路增层的剖面示意图四。
图26是另一已知有核层封装基板的剖面示意图。
图27是图26所示实施例具第一线路增层结构的剖面示意图。
图28是图27所示实施例具第二路增层结构的剖面示意图。
标号说明：
步骤(A)～(N)11～24
双层线路基板3              封装基板5
铜核基板30a
具第一线路层的铜核基板30b
具柱状接脚之铜核基板30c
第一、二阻层31、32         第一开□33
第一凹槽34                 第一电性阻绝层35
第一介电层36               第一金属层37
中空凹槽38                 第二开口39
第三阻层40                 第二金属层41
第四、五阻层42、43         第三开口44
第二线路层45               第一防焊层46
第四开口47
第六、七阻层48、49
第五开口50                 第二凹槽51
第二电性阻绝层52           电性接脚接垫53
第一、二阻障层54、55
第一、二线路增层结构6a、6b
第一、二线路增层结构7a、7b
核心基板60                 芯层601
线路层602                  电镀导通孔603
第一介电层61               第一开口62
该晶种层63                 图案化阻层64
第二开口65
第一图案化线路层66         导电盲孔67
第二介电层68
第二图案化线路层69         核心基板70
树脂塞孔701                电镀通孔702
第一介电层71
第一图案化线路层72
第二介电层73
第二图案化线路层74
具体实施方式：
请参阅图1所示，为本发明的制作流程示意图。如图所示：本发明为一种高散热性封装基板的制作方法，其至少包括下列步骤：
(A)提供铜核基板11：提供一铜核基板；
(B)形成第一、二阻层及复数个第一开口12：分别于该铜核基板的第一面上形成一第一阻层，以及于该铜核基板的第二面上形成一完全覆盖状的第二阻层，于其中，并以曝光及显影的方式在该第一阻层上形成复数个第一开口，以显露其下该铜核基板的第一面；
(C)形成第一凹槽13：以蚀刻的方式于复数个第一开口下方形成复数个第一凹槽；
(D)移除第一、二阻层14：以剥离的方式移除该第一阻层及该第二阻层，形成具有第一线路层的铜核基板；
(E)形成第一电性阻绝层15：以直接压合或印刷的方式于复数个第一凹槽内形成一第一电性阻绝层，并显露该第一线路层；
(F)形成第一介电层及第一金属层16：于该第一线路层与该第一电性阻绝层上直接压合一第一介电层及一第一金属层，亦或是先采取贴合该第一介电层后，再形成该第一金属层，于其中，该第一介电层及该第一金属层形成有复数个定义置晶位置的中空凹槽，并显露该第一线路层的金属接垫；
(G)形成复数个第二开口17：以激光钻孔的方式于该第一金属层与该第一介电层上形成复数个第二开口，并显露其下的第一线路层，其中，复数个第二开口系可先做开铜窗(Conformal Mask)后，再经由激光钻孔的方式形成，亦或是以直接激光钻孔(LASER Direct)的方式形成；
(H)形成第三阻层18：于该铜核基板的第二面上形成一第三阻层；
(I)形成第二金属层19：以无电电镀与电镀的方式于复数个第二开口中及复数个中空凹槽所显露的第一线路层上形成一第二金属层；
(J)移除第三阻层20：以剥离的方式移除该第三阻层；
(K)形成第四、五阻层及复数个第三开口21：分别于该第二金属层上形成一第四阻层，以及于该铜核基板的第二面上形成一完全覆盖状的第五阻层，于其中，并以曝光及显影的方式在该第四阻层上形成复数个第三开口，以显露其下的第二金属层；
(L)移除显露第一、二金属层22：以蚀刻的方式移除该第三开口下方的第二金属层及第一金属层；
(M)完成具有铜核基板支撑的双层线路基板23：以剥离的方式移除该第四阻层及该第五阻层，并形成一第二线路层。至此，完成一具有铜核基板支撑的双层线路基板，并可直接进行步骤(N)；以及
(N)进行置晶侧线路层与球侧电性接脚接垫的制作24：于该双层线路基板上进行一置晶侧线路层与球侧电性接脚接垫的制作，于其中，在该第二线路层表面形成一第一防焊层，并以曝光及显影的方式在该第一防焊层上形成复数个第四开口，以显露线路增层结构作为电性连接垫的部分，接着再分别于该第一防焊层上形成一完全覆盖状的第六阻层，以及于该铜核基板的第二面上形成一第七阻层，并且在该第七阻层上以曝光及显影的方式形成复数个第五开口，以显露其下该铜核基板的第二面。之后以蚀刻的方式于复数个第五开口上形成复数个第二凹槽，并显露复数个第五开口下方的第一电性阻绝层或第一线路层，接着再以剥离的方式移除该第六阻层及该第七阻层，以形成复数个柱状接脚，之后并于复数个第二凹槽内以直接压合或印刷的方式形成一第二电性阻绝层，以显露球侧复数个电性接脚接垫，最后，分别于复数个第四开口上形成一第一阻障层，以及于复数个电性接脚接垫上形成一第二阻障层。至此，完成一具有完整图案化的置晶侧线路层与球侧复数电性接脚接垫之封装基板，其中，该第一防焊层是以印刷、旋转涂布或喷涂所为的高感旋光性液态光阻；该第一、二阻障层可为电镀镍金、无电镀镍金、电镀银或电镀锡中择其一。
于其中，上述该第一～七阻层是以贴合、印刷或旋转涂布所为的干膜或湿膜的高感旋光性光阻；该第一、二电性阻绝层及该第一介电层可为防焊绿漆、环氧树脂绝缘膜(Ajinomoto Build-up Film，ABF)、苯环丁烯(Benzocyclo-buthene，BCB)、双马来亚酰胺-三氮杂苯树脂(Bismaleimide Triazine，BT)、环氧树脂板(FR4、FR5)、聚酰亚胺(Polyimide，PI)、聚四氟乙烯(Poly(tetra-floroethylene)，PTFE)或环氧树脂及玻璃纤维所组成之一。
请参阅图2～图14所示，分别为本发明一实施例的封装基板的剖面剖面示意图一、本发明一实施例的封装基板的剖面示意图二、本发明一实施例的封装基板的剖面示意图三、本发明一实施例的封装基板的剖面示意图四、本发明一实施例的封装基板的剖面示意图五、本发明一实施例的封装基板的剖面示意图六、本发明一实施例的封装基板的剖面示意图七、本发明一实施例的封装基板的剖面示意图八、本发明一实施例的封装基板的剖面示意图九、本发明一实施例的封装基板的剖面示意图十、本发明一实施例的封装基板的剖面示意图十一、本发明一实施例的封装基板的剖面示意图十二及本发明一实施例的封装基板的剖面示意图十三。如图所示：本发明于一较佳实施例中，是先提供一铜核基板30a，并分别于该铜核基板30a的第一面上贴合一高感旋光性高分子材料的第一阻层31，以及于该铜核基板30a的第二面上贴合一高感旋光性高分子材料的第二阻层32，并以曝光及显影的方式在该第一阻层31上形成复数个第一开口33，以显露其下该铜核基板30a的第一面，而其第二面上的第二阻层32则为完全覆盖状。接着以蚀刻的方式制作一第一凹槽34，并移除该第一、二阻层，以形成具有第一线路层的铜核基板30b，随后，印刷一第一电性阻绝层35于该第一凹槽34中，以显露出该第一线路层，其中，该铜核基板30a、30b为一不含介电层材料的厚铜板；该第一、二阻层31、32为干膜光阻层；该第一电性阻绝层35为防焊绿漆。
接着，于该第一线路层与该第一电性阻绝层35上压合一第一介电层36及一第一金属层37，其中该第一介电层36及该第一金属层37已事先以铣刀成形出复数个预作为定义置晶位置的中空凹槽38，其下方并显露出该第一线路层的金属接垫，以增加其散热效果。之后再以激光钻孔的方式于该第一金属层37与该第一介电层36上形成复数个第二开口39，接着并于该铜核基板30b的第二面上贴合一高感旋光性高分子材料的第三阻层40，并以无电电镀与电镀的方式于复数个第二开口39及复数个中空凹槽38下方的第一线路层表面形成一第二金属层41，之后移除该第三阻层，其中，该第一、二金属层37、41皆为铜，且该第二金属层41是作为与该第一线路层的电性连接用。
接着，分别于该第二金属层41上贴合一高感旋光性高分子材料的第四阻层42，以及于该铜核基板30b的第二面上贴合一高感旋光性高分子材料的第五阻层43，并曝光及显影的方式于该第四阻层42上形成复数个第三开口44，以显露其下的第二金属层41。最后以蚀刻方式移除该第三开口44下的第一、二金属层，并再移除该第四、五阻层，以形成一第二线路层45。至此，完成一具有该铜核基板支撑的双层线路基板3。
请参阅图15～图20所示，分别为本发明一实施例的封装基板的剖面示意图十四、本发明一实施例的封装基板的剖面示意图十五、本发明一实施例的封装基板的剖面示意图十六、本发明一实施例的封装基板的剖面示意图十七、本发明一实施例的封装基板的剖面示意图十八及本发明一实施例的封装基板的剖面示意图十九。如图所示：在本发明较佳实施例中，是接着进行置晶侧线路层与球侧电性接脚接垫的制作。首先于该第二线路层45表面涂覆一层绝缘保护用的第一防焊层46，并以曝光及显影的方式于该第一防焊层46上形成复数个第四开口47，以显露线路增层结构作为电性连接垫。接着分别于该第一防焊层46上贴合一高感旋光性高分子材料的第六阻层48，以及于该铜核基板30b的第二面上贴合一高感旋光性高分子材料的第七阻层49，并以曝光及显影的方式在该第七阻层49上形成复数个第五开口50，以显露其下该铜核基板30b的第二面，而该第一防焊层46则以该第六阻层48完全覆盖。之后以蚀刻的方式制作一第二凹槽51，并移除该第六、七阻层，以形成具复数个柱状接脚的铜核基板30c，然后印刷一第二电性阻绝层52于该第二凹槽51中，以显露出复数个电性接脚接垫53，最后，分别于复数个第四开口47上形成一第一阻障层54，以及于复数个电性接脚接垫53上形成一第二阻障层55。至此，完成一具高散热性的封装基板5，其中，该第二电性阻绝层52为防焊绿漆；该第一、二阻障层54、55皆为镍金层。
由上述可知，本发明从铜核基板为基础，开始制作封装基板的，其结构包括复数个球侧电性接脚接垫、一厚铜蚀刻线路及至少一增层线路。于其中，电性接脚接垫与厚铜线路是由铜核基板的两面分别蚀刻而成，且各增层线路与厚铜蚀刻线路连接的方式是以复数个电镀盲、埋孔所导通。因此，本发明封装基板的特色在于，制作厚铜蚀刻线路时能具选择性地保留位于置晶位置下方的厚铜，以提供置晶接垫，同时，并于该增层线路上形成至少一凹槽结构，且该凹槽结构并与厚铜蚀刻线路上的置晶接垫位置相符，可提供置晶时芯片能与下方金属接垫直接结合，以提供芯片运作时良好的散热结构，进而有效增加组件的散热效果；并且，其具有的高密度增层线路更可提供电子组件相连时所需的绕线。藉此，使用本发明具高散热性的封装基板的方法所制造的高散热性封装基板，可有效达到改善超薄核层基板板弯翘问题、及简化传统增层线路板制作流程的目的。
综上所述，本发明的一种高散热性封装基板的制作方法，可有效改善现有技术的种种缺点，利用于厚铜蚀刻线路时所选择性地保留位于置晶位置下方的厚铜，以及增层线路上所形成的中空凹槽，可使芯片能与下方金属接垫直接结合，有效地提供组件散热的所需，同时并可以其高密度增层线路提供电子组件相连时所需的绕线，因此可有效改善超薄核层基板板弯翘问题及简化传统增层线路板制作流程的目的，进而能使本发明能更进步、更实用、更符合使用者所须，确已符合发明专利申请的要件，依法提出专利申请。
惟以上所述，仅为本发明的较佳实施例而已，当不能以此限定本发明实施的范围；故，凡依本发明申请专利范围及发明说明书内容所作的简单的等效变化与修饰，皆应仍属本发明专利涵盖的范围内。

Claims (13)

1.一种高散热性封装基板的制作方法，其特征在于：其至少包含下列步骤：
A、提供一铜核基板；
B、分别于该铜核基板的第一面上形成第一阻层，以及于该铜核基板的第二面上形成完全覆盖状的第二阻层，于其中，该第一阻层上形成数个第一开口，并显露其下该铜核基板的第一面；
C、于数个第一开口下方形成数个第一凹槽；
D、移除该第一阻层及该第二阻层，形成具有第一线路层的铜核基板；
E、于数个第一凹槽内形成第一电性阻绝层，并显露该第一线路层；
F、于该第一线路层与该第一电性阻绝层上形成第一介电层及第一金属层，于其中，该第一介电层及该第一金属层形成有数个定义置晶位置的中空凹槽，该中空凹槽下方显露该第一线路层，且该中空凹槽与第一线路层上的置晶接垫位置相符；
G、该第一金属层与该第一介电层上形成数个第二开口，并显露其下的第一线路层；
H、于该铜核基板的第二面上形成第三阻层；
I、于数个第二开口中及数个中空凹槽所显露的第一线路层上形成第二金属层；
J、移除该第三阻层；
K、分别于该第二金属层上形成一第四阻层，以及于该铜核基板的第二面上形成一完全覆盖状的第五阻层，其中，该第四阻层上形成数个第三开口，并显露其下的第二金属层；
L、移除该第三开口下方的第二金属层及第一金属层；
M、移除该第四阻层及该第五阻层，并形成一由第一金属层和第二金属层组成的第二线路层，至此，完成一具有铜核基板支撑的双层线路基板，并直接进行步骤N；以及
N、于该双层线路基板上进行置晶侧线路层与球侧电性接脚接垫的制作，于其中，在该第二线路层表面形成第一防焊层，且在该第一防焊层上形成数个第四开口，以显露第二线路层作为电性连接垫的部分，接着再分别于该第一防焊层上形成完全覆盖状的第六阻层，以及于该铜核基板的第二面上形成第七阻层，并且在该第七阻层上形成数个第五开口，以显露其下该铜核基板的第二面，之后于数个第五开口上形成数个第二凹槽，并显露数个第五开口下方的第一电性阻绝层或第一线路层，接着再移除该第六阻层及该第七阻层，以形成数个柱状接脚，之后并于数个第二凹槽内形成第二电性阻绝层，以显露球侧数个电性接脚接垫，最后，分别于数个第四开口上形成第一阻障层，以及于数个电性接脚接垫上形成第二阻障层，该第一、二阻障层为电镀镍金或无电镀镍金或电镀银或电镀锡，至此，完成一封装基板。
2.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述铜核基板为不含介电层材料的铜板。
3.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述第一～七阻层是以贴合、印刷或旋转涂布所为的干膜或湿膜的高感旋光性光阻。
4.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述数个第一、三、四及五开口以曝光及显影方式形成。
5.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述步骤C形成数个第一凹槽、该步骤L移除该第一、二金属层、及步骤N形成数个第二凹槽的方法为蚀刻。
6.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述第一～七阻层的移除方法为剥离。
7.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述第一、二电性阻绝层以直接压合或印刷方式形成。
8.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述第一、二电性阻绝层及该第一介电层为环氧树脂绝缘膜、苯环丁烯、双马来亚酰胺-三氮杂苯树脂、环氧树脂板、聚酰亚胺、聚四氟乙烯或环氧树脂及玻璃纤维所组成之一。
9.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述步骤F以直接压合该第一介电层及该第一金属层于其上，或采取贴合该第一介电层后，再形成该第一金属层。
10.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述数个中空凹槽的形成方式为冲压、激光或铣刀成形。
11.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述数个第二开口是先做开铜窗后，再经由激光钻孔的方式形成，亦或是直接以激光钻孔的方式形成。
12.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述第二金属层的形成方式为无电电镀或电镀。
13.如权利要求1所述的高散热性封装基板的制作方法，其特征在于：所述第一防焊层以印刷、旋转涂布或喷涂所为的高感旋光性液态光阻。
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