CN101379618A - 具有改进的焊料接合的半导体装置 - Google Patents

具有改进的焊料接合的半导体装置 Download PDF

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Publication number
CN101379618A
CN101379618A CNA200780004485XA CN200780004485A CN101379618A CN 101379618 A CN101379618 A CN 101379618A CN A200780004485X A CNA200780004485X A CN A200780004485XA CN 200780004485 A CN200780004485 A CN 200780004485A CN 101379618 A CN101379618 A CN 101379618A
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China
Prior art keywords
solder
copper
percentage
pad
compound
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CNA200780004485XA
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雨海正纯
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of CN101379618A publication Critical patent/CN101379618A/zh
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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Abstract

本发明描述一种具有改进的焊料接合系统的半导体装置。所述焊料系统包括由焊料主体(120)连接的两个铜接触垫，且所述焊料是包括锡、银，以及来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属的合金。所述焊料接合系统在所述垫与所述焊料之间还包括金属间化合物层，所述金属间化合物包括铜与锡化合物以及铜、银与锡化合物的晶粒。所述化合物含有所述过渡金属。在所述化合物晶粒中包括所述过渡金属减小了所述化合物晶粒尺寸，并避免晶粒尺寸在所述焊料接合经历了反复的固态/液态/固态循环之后增大。

Description

具有改进的焊料接合的半导体装置
技术领域
本发明一般涉及应用于电子系统与半导体装置的冶金系统的领域，且更具体来说，涉及在半导体产品的焊料接合处控制金属间晶粒尺寸的方法。
背景技术
当将要使用例如焊料的回流材料将半导体芯片上的集成电路互连到衬底上的外部电路时，或当必须使用回流焊料将经包装的半导体芯片互连到板时，将要组装的部件必须经历至少一次温度升高，而达到高于所述回流材料的熔化温度的一温度，随后为冷却循环。在完成此过程后，所完成的组合件常必须经受退火步骤——在延长的时期内反复变化温度。而所组装的部件常必须经测试以在反复暴露于例如极端温度偏移与高湿度的故障加速条件之后确定它们的可靠运作。
从早期的回流组装部件的研发便已开始研究的故障机制主要是应力诱发的接合疲劳、蠕变与破裂。类似地，应力起始的故障也是研究使用例如焊料的回流材料在外部部件上组装的完整装置包装时所关注的焦点。对于因例如金属相互扩散、化合物形成、与晶格失配的金属间效应而在所述组合件接合中引发渐进式的变化则较少关注。这些变化对于某些金属来说尤其显著，并可能是不可逆的，同时可能造成所完成装置的可靠性降低。
明确地说，已发现铜垫在直接接触焊料时显得相当脆弱，尤其是在机械冲击(“掉落”)测试中。一种解决方案是在铜与焊料之间实施镍层以作为扩散障壁进而限制所述焊料反应。然而，增加的电镀过程对于较大的板与衬底来说是不实用的。
发明内容
申请人认识到对于高装置可靠性(包括在掉落测试中)的需求；并研究在反复的固态/液态/固态循环下以及在高温的长期影响下，铜与二元焊料(尤其是锡/银合金)间的界面。此调查表明，在高温偏移下，初始为小晶粒的金属间化合物(其包括铜)会逐渐成长为大晶粒化合物，并且会在焊料与铜之间的界面处形成大量的克根达尔(Kirkendall)空洞。两种现象均使所述金属间接合的界面强度大大降低并使得在掉落测试之后能够观察到焊料接合破裂。
此外，申请人还发现含有来自元素周期表某些过渡族的金属的锡/银基三元焊料合金能够取代某些金属间化合物中的铜，且甚至在反复的固态/液态/固态循环之后产生减小且固定的金属间晶粒尺寸，以及减小的金属间层厚度。这些效应大大地改进掉落测试中的装置可靠性。
本发明的一个实施例是一种金属互连结构，其中两个铜接触垫由焊料主体连接。所述焊料是一种包括锡、银，以及来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属的合金。在所述垫与所述焊料之间的是金属间化合物层，所述金属间化合物层具有含有得自焊料主体的过渡金属的铜/锡与铜/银/锡化合物晶粒。接近所述接触垫的焊料区域中的过渡金属的重量百分比小于所述焊料主体的中央区域中的过渡金属的重量百分比。在并入所述过渡金属的情况下，所述化合物晶粒较小，且在固态/液态/固态循环之后仍保持较小。
过渡族IIIA中的金属包括钪、钇和镧；族IVA中包括：钛、锆和铪；族VA中包括：钒、铌和钽；族VIA中包括：铬、钼和钨；族VIIA中包括：锰和铼；以及族VIIIA中包括：铁、钴、镍、钌、铑、钯、锇、铱和铂。
本发明的另一实施例是堆叠的半导体装置，其包括第一装置与第二装置。所述第一装置包括衬底、组装在衬底表面上的半导体芯片、以及在相反衬底表面上的铜接触垫。所述第二装置包括衬底、组装在所述衬底表面上的半导体芯片，以及环绕与由焊料连接的第一包装的垫对准的经组装芯片的铜接触垫。所述第二装置在经组装芯片的相反衬底表面上也具有铜接触垫。
所述焊料主体是合金，其包括锡、银和来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属。金属间化合物层介于每一铜垫与焊料主体之间。所述化合物包括铜/锡与铜/银/锡化合物的晶粒，其含有来自所述焊料主体的过渡金属。因此，接近所述接触垫的焊料区域中的过渡金属重量百分比小于所述焊料主体的中央区域中的重量百分比。包括过渡金属的化合物晶粒具有较小的晶粒尺寸并且在固态/液态/固态循环之后仍保持较小；本发明因此产生例如包装上包装堆叠装置(package-on-packagestacked device)的半导体装置，其在例如掉落测试的可靠性测试中表现出低得多的故障率。
本发明的另一实施例是一种电子系统，其具有焊接在电路板的铜接触垫上的堆叠装置。所述系统也具有第二堆叠装置，其中对准板垫与合金焊料主体的垫连接经对准的垫。所述合金具有来自上文所列举的过渡族的至少一金属。同样，在垫与焊料主体间存在金属间化合物层，其并入晶粒状的过渡金属。所述并入减小了在焊料回流后所形成的化合物晶粒尺寸，以及所述化合物层的厚度，并使得所述化合物晶粒尺寸在反复的固态/液态/固态循环之后可重现为较小，从而产生大幅改进的系统可靠性性能。
附图说明
图1是在两个接触垫间的金属互连结构的示意性横截面。在图1中，一个接触垫是由单一金属层制成；一个接触垫是由夹心层制成。
图2A到7D是以各自的俯视图(图A与C)以及横截面图(图B与D)描绘各种金属间化合物晶粒Sn3Ag、Sn3AgCu、Sn3Ag0.01Ni、Sn3Ag0.03Ni、Sn3Ag0.03Co与Sn3Ag0.1Zn的放大显微照片。
图8是包括组装在电路板上的堆叠半导体装置的电子系统的示意性横截面。
具体实施方式
图1示意性说明金属互连结构。元件101表示第一衬底，其由绝缘衬底、电路板、或半导体材料制成。衬底表面由绝缘材料102(例如保护涂层(例如，二氧化硅、氮化硅、或聚酰亚胺)或阻焊膜)覆盖；所述厚度优选在约20到40μm之间。涂层102中有一窗口，其暴露金属接触垫103。接触垫103的优选金属是铜或铜合金，其厚度在从约10μm到30μm的范围中。
元件111表示第二绝缘衬底、第二电路板、或第二半导体材料。其表面由部分绝缘、保护材料112覆盖，所述部分绝缘、保护材料112具有暴露第二金属接触垫113的窗口。接触垫113的优选金属是铜或铜合金，其厚度在从约10μm到30μm的范围中。
在图1的变化形式中，第一接触垫103在其上可具有所述铜表面障壁金属层104与105。优选的是，层104是由厚度在从约0.01μm到3μm的范围中的镍制成，而层105是由厚度在从约0.3μm到1μm的范围中的金制成。在另一变化形式中，第二铜接触垫113在其上可具有障壁层，其优选由0.01μm到3μm厚的镍制成，其上紧接着优选为由0.3μm到1μm的金制成的层。
图1中，第二接触垫位于第一接触垫的对面。焊料主体120接触所述第一与第二垫，因此连接所述两个垫。主体120的焊料合金，其包括以下金属：锡，其量为约95.5到约99.49的重量百分比；银，其量为约0.5到约4.0的重量百分比；以及来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属，其量为约0.01到约0.5的重量百分比。
作为引入的块状部件，原始的焊料主体表现出所述合金成份的大体均匀分布。然而，在焊料回流之后，接近接触垫的焊料区域中的过渡金属重量百分比小于焊料主体的中央区域中的过渡金属重量百分比(在某些结构中，小于其一半以上)。
过渡族IIIA中的金属包括钪、钇和镧；过渡族IVA中的金属包括钛、锆和铪；过渡族VA中的金属包括钒、铌和钽；族VIA中的金属包括铬、钼和钨；过渡族VIIA中的金属包括锰与铼；以及过渡族VIIIA中的金属包括铁、钴、镍、钌、铑、钯、锇、铱和铂。
当焊料主体120经液化随后并经固化以附接到接触垫103时，金属间化合物层在所述垫103与所述焊料120间形成。如将在以下图式中将展示，所述化合物包括铜/锡与铜/银/锡化合物的晶粒，例如(CuX)6Sn5、Sn3Ag和Ag3Sn，其中X是来自所述焊料主体的过渡金属。在所述化合物晶粒中包括所述过渡金属减小了化合物晶粒尺寸与化合物层厚度。此外，在反复的液化与固化循环中，仍可重现包括所述过渡金属的化合物晶粒，这意味着所述晶粒尺寸在反复的固态/液态/固态循环之后不会显著地成长。
当焊料主体120再次液化随后并固化以便附接到所述第二接触垫113时，另一金属间化合物层在所述第二垫与所述焊料之间形成。同样，所述化合物包括锡/银、铜/锡与铜/银/锡化合物，且并入所述过渡金属同样减小了化合物晶粒尺寸与化合物层厚度。此外，仍可重现所述晶粒尺寸。
对此现象的一个可能的解释是，当过渡金属的原子接合金属间晶粒时，其取代化合物晶粒中的原子，例如含铜化合物中的铜原子。在此金属粘合过程中，过渡金属使其电子中的一者或一者以上成为金属中的电子“气体”；结果，其核的吸引力变强，且因此金属原子的直径减小。
在附图的图2A到7D(其显示不同化合物)中重现申请人的实验的实例性化合物的显微照片：在图A中，在化合物形成(第一焊料回流)后的俯视显微照片，放大倍率2000x；在图B中，展示金属间化合物层的化合物横截面，3000x；在图C中，在四次焊料回流后的金属间化合物的俯视显微照片，放大倍率2000x；以及，在图D中，展示在所述回流后的金属间化合物层的横截面，3000x。为获得所述化合物层的俯视图，首先通过打磨来移除所述焊料，然后通过化学物品(Meltex HN-980M)来蚀刻并使用超音波清洗来清洗所述表面。
图2说明使用未并入过渡金属的锡/银焊料而形成的金属间化合物Sn3Ag。比较仅1次回流后的化合物晶粒(图2A与2B)与4次回流后的化合物晶粒(2C与2D)，显然晶粒尺寸会与回流的次数成比例地显著增大。由于此金属间化合物晶粒尺寸的增大会导致焊料接合的机械弱化，所以这些结果指示，使用此类金属间化合物的装置更可能无法通过例如掉落测试的可靠性测试。
图3A到3D说明金属间化合物Sn3AgCu。比较仅1次回流后的化合物晶粒(3A与3B)与4次回流后的化合物晶粒(3C与3D)，显然晶粒尺寸在所述回流之后会显著增大，伴有从装置可靠性观点来看的非所要后果的结果。例如Sn3Ag0.7Cu、Sn3Ag0.5Cu、Sn3Ag0.3Cu和Sn3Ag0.1Cu的相关化合物在反复的固态/液态/固态循环之后类似地展示非所要的晶粒尺寸增大。
通过添加(例如)镍(过渡族VIIIA的金属)形成均匀的三元合金会导致图4A-4D中所展示的实例性化合物Sn3Ag0.01Ni。将图4A与4B中的金属间化合物与图2A与2B中的锡/银化合物以及图3A与3B中的锡/银/铜化合物进行比较，清楚地展示添加镍会减小金属间晶粒的尺寸。将图4C和4D与图2C、2D和图3C、3D进行比较进一步突出反复的回流循环对过渡金属化合物晶粒尺寸具有极小的影响的事实；所述过渡金属化合物晶粒尺寸仅在4次固态/液态/固态循环之后不显著地增大。所述金属间化合物晶粒尺寸的稳定性会使得焊料接合的机械强度增强。使用具有这些金属间化合物的焊料接合的装置更可能通过例如所述掉落测试的可靠性测试。
图5中所说明的三元化合物Sn3Ag0.03Ni因多出一步骤而使得镍的添加产生有利效果。将图5与图4进行比较，展示Sn3Ag0.03Ni的化合物晶粒尺寸更小并且在四次或更多次回流循环后不会改变或增大。更小的晶粒尺寸和循环不敏感度的趋势在使用三元化合物Sn3Ag0.05Ni的情况下会继续。
另一实例性过渡族VIIIA金属是铂且相应的金属间化合物是Sn3Ag0.05Pt。
实例性过渡族VIIA金属是钴，且图6A到6D说明通过在锡/银合金与铜垫的界面处所形成的金属间化合物中并入钴而获得所要的效果。如图6A与6B展示，所得的Sn3Ag0.03Co晶粒尺寸较小。此外，如在图6C与6D中4次固态/液态/固态循环之后的晶粒显微照片所说明，反复的回流循环不会导致所述晶粒尺寸的任何显著改变。
申请人也调查过反例，尤其是含有来自过渡族IB、IIB、IIIB、IVB和VB的一种或一种以上金属的合金。
举例来说，图7A到7D说明来自过渡族IIB的元素锌的影响。所显示的化合物为Sn3Ag0.1Zn；相似的结果也发生在Sn3Ag0.005Zn上。将仅1次回流后的化合物晶粒(7A与7B)与4次回流后的化合物晶粒(7C与7D)进行比较，显然晶粒尺寸在回流之后显著增大。
如上所述，金属间化合物晶粒尺寸在反复的固态/液态/固态焊料循环之后显著增大导致焊料接合的机械弱化，并在装置可靠性测试中造成高故障率。对于使用族IIB、IIIB、IVB、VB的过渡金属而产生的不利结果的可能解释是，在未填满壳层中具有较高数目的电子的元素添加电子以填满所述壳层而非将电子释放成金属中的电子“气体”的趋势。通过添加电子，所述金属核的吸引力会变得较弱并导致金属原子直径增大。原子直径增大又导致并入所述过渡金属的金属间化合物的增大。
类似地，在三元焊料合金含有来自族IIIB的金属(例如，铝或铟)时从申请人的实验获得了非所要的结果。实例性金属间化合物是Sn3Ag0.005Al、Sn3Ag0.1In、Sn3Ag0.2In和Sn3Ag0.3In。
针对族IVB元素锗与相对应的化合物Sn3Ag0.05Ge，族VB元素磷与相对应的化合物Sn3Ag0.003P，以及族VB元素锑与相对应的化合物Sn3Ag0.3Sb和Sn3Ag0.5Sb，也可观察到反复回流循环后的较大的金属间化合物增大。
本发明的另一实施例是堆叠的半导体装置，其包括多单元装置。图8中示意性描绘实例性装置800。底部装置(也称为第一装置)经指定为810，且顶部装置(也称为第二装置)经指定为820。
第一装置810包括衬底801，其具有第一表面801a和第二表面801b。衬底801优选由绝缘材料制成；其也可为由交替的绝缘与导电材料薄膜组成的层压衬底。对于许多装置应用来说，衬底801的优选厚度为约0.3mm。在第一衬底表面801a上组装有半导体芯片802；也可组装一个以上芯片。在某些产品中，所述芯片可为两个或两个以上芯片的堆叠。对于线接合装置来说，组合件包括使用粘合剂将所述芯片附接到第一表面801a，以及将所述芯片接触垫的电连接804附接到表面801a上的所述结合垫805。对于倒装芯片装置来说，组合件包括使用焊料元件将芯片机械和电连接到表面801a的接触垫。
第一多个(例如：140到160个)铜接触垫803位于第一衬底表面801a上环绕经组装芯片。第二多个(例如：440到460个)铜接触垫806在所述第二衬底表面801b上。焊料主体807(例如，直径30μm)附接到第二多个垫中的每一垫806。图8中，所述组装装置的部分经包装在封装808中。在装置810仅使用一个芯片时，经包装的装置的总厚度(包括焊料元件807)优选为约0.8±0.1mm。
图8展示第二装置820，其包括具有第一表面811a和第二表面811b的衬底811。对于许多装置应用来说，衬底811的优选厚度为约0.3mm。在图8A中，两个半导体芯片812a与812b的堆叠经描绘成组装在第一衬底表面811a上。铜接触垫813在第二衬底表面811b上经定位以与第一装置810的第一多个垫803匹配。焊料主体817附接到第二衬底表面上的每一垫813。图8中，经组装装置的部分包装在封装化合物816中。在装置820使用两个芯片时，所述经包装的装置的总厚度(包括焊料元件817)优选为约0.9±0.1mm。
所述第二装置820与所述第一装置810对准，使得附接到第二装置820的第二衬底垫813的每一焊料主体817接触并连接到第一多个第一装置810的相对垫803。
此实例性实施例中的焊料主体807与817是三元合金，其包括：锡，其量为约95.5到约99.49的重量百分比；银，其量为约0.5到约4.0的重量百分比；以及来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的一种金属，其平均量为约0.01到约0.5的重量百分比；在所述合金中可包括一种以上过渡金属。在回流之后，接近所述接触垫的焊料区域中的过渡金属重量百分比小于所述焊料主体的中央区域中的重量百分比(在许多情况下，小于其一半)。
过渡族IIIA中的金属包括钪、钇和镧；过渡族IVA中的金属包括钛、锆和铪；过渡族VA中的金属包括钒、铌和钽；过渡族VIA中的金属包括铬、钼和钨；过渡族VIIA中的金属包括锰与铼；且过渡族VIIIA中的金属包括铁、钴、镍、钌、铑、钯、锇、铱和铂。
金属间化合物层在回流后在每一铜垫与焊料主体之间形成；所述化合物包括铜/锡与铜/银/锡化合物的晶粒，例如Sn3Ag、Ag3Sn、(CuX)6Sn5和其它，其中X是来自焊料主体的过渡金属。当所述焊料主体在附接过程中经液化且随后经固化时，形成所述化合物与所述晶粒。
对于图8中所示的堆叠装置来说，可能需要至少三次固态/液态/固态循环。其包括使焊料元件817附接到第二装置820的衬底垫813上(在第二装置820的制造方法中的过程步骤)以及通过回流焊料主体817而使第二装置820第二次附接到第一装置810上。所述第二装置的焊料主体817与所述第一装置的相配衬底垫803对准，并接触垫803且经回流。
在此过程实施例中，通过接合第一装置810与第二装置820，以及使焊料元件807附接到第一装置810的衬底垫806上(在第一装置810的制造方法中的过程步骤)而产生堆叠装置800。
在这三次固态/液态/固态循环中，所述第二装置的焊料主体会经历三次回流过程。
当上述过渡金属并入于化合物晶粒中时，其减小化合物晶粒尺寸以及因此减小化合物层厚度；其也使化合物晶粒尺寸在连续的焊料固态/液态/固态循环中可重现。
当如同图8的堆叠半导体装置的装置经受例如掉落测试(其调查焊料附接装置的机械稳固性)的可靠性测试时，在金属间化合物中包括过渡金属的具有焊料接合的装置会表现出优异的性能。即便是在反复的固态/液态/固态循环后仍可重现的金属间化合物的小尺寸晶粒会抑制所述接合破裂或其它焊料脱层。
在典型的掉落测试中，掉落平台被装载到1.5G加速度，掉落高度为1m，且印刷电路板经受具有衰减波形的应变并持续30ms且更久。掉落测试装备可例如从SalonTeknopaja购得。
一种制造堆叠半导体装置的实例性方法包括以下步骤：
通过提供具有两个表面的衬底，并于第一衬底表面上组装半导体芯片或多个芯片来制造第一半导体装置；使用第一多个铜接触垫环绕所述芯片，并在第二衬底表面上形成第二多个铜接触垫；
通过提供具有两个表面的衬底，并在第一衬底表面上组装一个或一个以上半导体芯片来制造第二半导体装置；在第二衬底表面上定位铜接触垫以与第一装置的垫匹配；
选择作为大体上均匀合金的焊料主体，所述合金包括：锡，其量为约95.5到约99.49的重量百分比；银，其量为约0.5到约4.0的重量百分比；以及来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属，其量为约0.01到约0.5的重量百分比；以及
将所述焊料主体附接并回流到第二衬底表面上的垫以在每一铜垫与焊料主体间产生铜金属间化合物层，其并入来自焊料主体的过渡金属；
将第二装置与第一装置对准，使得附接到第二装置的第二衬底垫的每一焊料主体与第一装置的相应第一多个垫接触；以及
回流所述焊料主体以使合金焊料主体附接到第一装置的每一第二多个垫。
本发明的另一实施例是一种电子系统，其包括安装在衬底或板上的装置。图8说明此一实施例，其中堆叠装置800在印刷电路板830上焊料附接。电路板830具有铜接触垫823，其经定位以与第一装置810的衬底上的第二多个接触垫806匹配。在系统的制造过程中，所述堆叠半导体装置800与电路板830对准，使得附接到第一装置810的第二多个垫806的每一焊料主体807与相应板垫823接触。焊料主体807随后经回流。
附接循环是第四次固态/液态/固态循环，并因此可能为系统中部分焊料元件的第三回流循环。焊料系统的金属间晶粒中具有来自上文列举的族的过渡金属会使电子装置更可能以可接受的故障率通过掉落测试以及其它可靠性测试。
尽管已参考说明性实施例描述了本发明，然而并不希望将此描述解释为具有限制意义。所属领域的技术人员在参考描述之后将明白对所述说明性实施例(以及本发明的其它实施例)的各种修改与组合。举例来说，可堆叠两个以上装置来产生复合装置。作为另一实例，可在焊料合金中使用一种以上来自元素周期系统的过渡族的金属，以产生四元合金等。因此，希望所主张的本发明涵盖所有此类修改和实施例。

Claims (10)

1.一种结构，其包含：
第一接触垫，其具有铜表面；
第二接触垫，其具有铜表面，所述第二接触垫位于所述第一接触垫的对面；
焊料主体，其接触所述第一垫和第二垫，所述焊料是合金，其包括：
锡，其量为第一重量百分比；
银，其量为第二重量百分比；以及
来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属，其平均量为约0.01到约0.5的重量百分比，其中接近所述接触垫的焊料区域具有大于零百分比的第三重量百分比，且所述焊料主体的中央区域具有高于所述第三重量百分比的第四重量百分比；以及
在所述第一垫与所述焊料主体之间的第一金属间化合物层，和在所述第二垫与所述焊料主体之间的第二金属间化合物层；
所述化合物包括铜与锡化合物以及铜、银与锡化合物的晶粒；且所述化合物含有过渡金属。
2.根据权利要求1所述的结构，其中所述过渡金属是镍、铂或钴中的至少一者。
3.根据权利要求1或2所述的结构，其中所述金属间化合物包括Sn3Ag、Ag3Sn和(CuX)6Sn5，其中X是所述过渡金属。
4.根据权利要求1或2所述的结构，其进一步包含所述铜接触垫中的至少一者上的非铜的一个或多于一个障壁金属层。
5.根据权利要求4所述的结构，其中与所述铜垫接触的所述障壁金属层是镍层和金层。
6.一种包含第一装置、第二装置、焊料主体和焊料接合的半导体装置：
所述第一装置包括：
衬底，其具有第一表面和第二表面；
至少一半导体芯片，其组装在所述第一衬底表面上；
第一多个铜接触垫，其经定位以接近所述第一衬底表面上的所述经组装的至少一芯片；
第二多个铜接触垫，其在所述第二衬底表面上；以及
焊料主体，其附接到所述第二多个铜接触垫的每一垫；
所述第二装置包括：
衬底，其具有第一表面和第二表面；
至少一半导体芯片，其组装在所述第一衬底表面上；
铜接触垫，其在所述第二衬底表面上，所述铜接触垫经定位以与所述第一装置的所述第一多个接触垫匹配；以及
焊料主体，其附接到所述第二衬底表面上的每一垫；
所述第二装置与所述第一装置对准，以使得附接到所述第二装置的第二衬底垫的每一焊料主体接触并连接到所述第一装置的相应所述第一多个垫；
所述焊料主体是合金，其包括：
锡，其量为第一重量百分比；
银，其量为第二重量百分比；以及
来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属，其平均量为约0.01到约0.5的重量百分比，其中接近所述接触垫的焊料区域具有大于零的第三重量百分比，且所述焊料主体的中央区域具有大于所述第三重量百分比的第四重量百分比；以及
所述焊料接合，其包括每一铜垫与所述焊料主体之间的金属间化合物层，所述化合物包括铜与锡化合物以及铜、银与锡化合物的晶粒；以及
所述金属间化合物，其包括所述过渡金属。
7.一种电子系统，其包含：
第一半导体装置，其包括：
衬底，其具有第一表面和第二表面；
至少一半导体芯片，其组装在所述第一衬底表面上；
第一多个铜接触垫，其在所述第一衬底表面上，接近所述经组装的至少一芯片；
第二多个铜接触垫，其在所述第二衬底表面上；以及
焊料主体，其附接到所述第二多个的每一垫；
第二半导体装置，其包括：衬底，其具有第一表面和第二表面；
至少一半导体芯片，其组装在所述第一衬底表面上；
铜接触垫，其在所述第二衬底表面上，所述铜接触垫经定位以与所述第一装置的所述第一多个垫匹配；以及
焊料主体，其附接到所述第二衬底表面上的每一垫；
所述第二装置与所述第一装置对准，以使得附接到所述第二装置的所述第二衬底表面上的垫的每一焊料主体接触所述第一装置的相应所述第一多个垫；
电路板，其具有经定位以与所述第一装置的所述第二多个垫匹配的铜接触垫；
所述第一装置与所述电路板对准，以使得附接到所述第一装置的第二衬底垫的每一焊料主体接触所述板的所述相应垫；
所述焊料主体是合金，其包括：
锡，其量为第一重量百分比；
银，其量为第二重量百分比；以及
来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属，其平均量为约0.01到约0.5的重量百分比，其中接近所述接触垫的焊料区域具有大于零的第三重量百分比，且所述焊料主体的中央区域具有大于所述第三重量百分比的第四重量百分比；以及
在每一铜垫与所述焊料主体之间的金属间化合物层，所述化合物包括铜与锡化合物以及铜、银与锡化合物的晶粒；
所述金属间化合物，其含有所述过渡金属。
8.一种用于制造堆叠半导体装置的方法，其包含以下步骤：
制造第一半导体装置，其包括以下步骤：
提供具有第一表面和第二表面的衬底，进一步在所述第一衬底表面上组装至少一半导体芯片；所述衬底具有处于环绕所述第一衬底表面上的所述经组装的至少一芯片的位置处的第一多个铜接触垫，以及在所述第二衬底表面上的第二多个铜接触垫；
制造第二半导体装置，其包括以下步骤：
提供具有第一表面和第二表面的衬底，进一步在所述第一衬底表面上组装至少一半导体芯片；所述衬底在所述第二衬底表面上具有铜接触垫，所述铜接触垫经定位以与所述第一装置的所述第一多个垫匹配；
将焊料主体选择为以下各物的大体上均匀合金：
锡，其具有第一重量百分比；
银，其具有第二重量百分比；以及
来自元素周期表的过渡族IIIA、IVA、VA、VIA、VIIA和VIIIA的至少一金属，其量为约0.01到约0.5的重量百分比；
将焊料主体附接并回流到所述第二衬底表面上的每一垫以在每一铜垫与焊料主体之间产生金属间化合物层，所述化合物包括铜与锡化合物以及铜、银与锡化合物的晶粒；
所述化合物含有所述至少一过渡金属；
将所述第二装置与所述第一装置对准，以使得每一焊料主体接触所述第一装置的所述相应第一多个垫；
回流所述焊料主体；
将合金焊料主体附接到所述第一装置的每一第二多个垫；以及
回流所述焊料主体。
9.根据权利要求8所述的方法，其中所述过渡金属包括镍、铂或钴中的至少一者。
10.根据权利要求8或9所述的方法，其进一步包含以下步骤：
提供电路板，其具有处于与所述第一装置的所述第二多个垫匹配的位置处的铜接触垫；
将所述堆叠装置与所述电路板对准，以使得附接到所述第一装置的第二多个垫的每一焊料主体接触所述相应板垫；以及
回流所述焊料主体。
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