CN111916550A - 电子装置 - Google Patents

电子装置 Download PDF

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Publication number
CN111916550A
CN111916550A CN201910386281.1A CN201910386281A CN111916550A CN 111916550 A CN111916550 A CN 111916550A CN 201910386281 A CN201910386281 A CN 201910386281A CN 111916550 A CN111916550 A CN 111916550A
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China
Prior art keywords
solder
layer
tin
electronic device
substrate
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Granted
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CN201910386281.1A
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CN111916550B (zh
Inventor
林明昌
颜子旻
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Innolux Corp
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Innolux Corp
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Priority to CN201910386281.1A priority Critical patent/CN111916550B/zh
Priority to CN202310033113.0A priority patent/CN115863526A/zh
Priority to US16/860,040 priority patent/US11527688B2/en
Priority to EP20172689.0A priority patent/EP3736868A1/en
Publication of CN111916550A publication Critical patent/CN111916550A/zh
Priority to US17/985,902 priority patent/US20230072729A1/en
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Publication of CN111916550B publication Critical patent/CN111916550B/zh
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract

本发明提供了一种电子装置，其包含基板以及发光二极管。发光二极管通过一焊料合金接合在基板上。焊料合金包括锡和一金属元素M，金属元素M包括铟或铋中的其中一者，且在焊料合金中，锡所占锡与金属元素M的总合的原子百分比的范围是60％至90％。

Description

电子装置
技术领域
本发明涉及一种电子装置，特别是一种包括通过焊料接合的电子元件的电子装置。
背景技术
在电子装置的接合制程中，可能因所使用的焊料材料的熔点温度或材料特性(包括硬度)而影响合格率。因此，如何提升电子装置于接合制程中的合格率或可靠度已成为本领域中一个重要的任务。
发明内容
本发明提供了一种电子装置，其包含基板以及发光二极管。发光二极管通过一焊料合金接合在基板上。焊料合金包括锡和一金属元素M，金属元素M包括铟或铋中的其中一者，且在焊料合金中，锡所占锡与金属元素M的总合的原子百分比(atomic percentage)的范围是60％至90％。
附图说明
图1所示为本发明第一实施例接合前的电子装置的侧视示意图。
图2所示为本发明第一实施例接合后的电子装置的侧视示意图。
图3所示为本发明第二实施例接合前的电子装置的侧视示意图。
图4所示为本发明第二实施例混合前的焊料的示意图。
图5A所示为本发明第二实施例接合后的电子装置的侧视示意图。
图5B所示为本发明第三实施例接合后的电子装置的侧视示意图。
图6所示为本发明第三实施例接合前的电子装置的侧视示意图。
图7A所示为本发明一实施例通过能量散布分析仪量测的侧视示意图。
图7B为沿着图7A的箭头方向量测焊料合金的分析结果。
附图标记说明：10-电子装置；102-基板；104-发光二极管；106-开关元件；108、1081、1082、1083、1084-导电结构；110、114-接合层；112、1121、1122-焊料；116-焊料合金；1181、1182-导电层；1201、1202-层；1202-c、116-c1、116-c2、1201-c-线。
具体实施方式
通过参考以下的详细描述并同时结合附图可以理解本发明，须注意的是，为了使读者能容易了解及图式的简洁，本发明中的多张图式只绘出电子装置的一部分，且图式中的特定元件并非依照实际比例绘图。此外，图中各元件的数量及尺寸仅作为示意，并非用来限制本发明的范围。
本发明通篇说明书与后附的权利要求中会使用某些词汇来指称特定元件。本领域技术人员应理解，电子设备制造商可能会以不同的名称来指称相同的元件。本文并不意在区分那些功能相同但名称不同的元件。在下文说明书与权利要求书中，「含有」与「包括」等词为开放式词语，因此其应被解释为「含有但不限定为…」之意。
应了解到，当元件或膜层被称为在另一个元件或膜层「上」或「连接到」另一个元件或膜层时，它可以直接在此另一元件或膜层上或直接连接到此另一元件或膜层，或者两者之间存在有插入的元件或膜层(非直接情况)。相反地，当元件被称为「直接」在另一个元件或膜层「上」或「直接连接到」另一个元件或膜层时，两者之间不存在有插入的元件或膜层。
虽然术语第一、第二、第三…可用以描述多种组成元件，但组成元件并不以此术语为限。此术语仅用于区别说明书内单一组成元件与其他组成元件。权利要求中可不使用相同术语，而依照权利要求中元件宣告的顺序以第一、第二、第三…取代。因此，在下文说明书中，第一组成元件在权利要求中可能为第二组成元件。
须知悉的是，以下所举实施例可以在不脱离本发明的精神下，将数个不同实施例中的技术特征进行替换、重组、混合以完成其他实施例。
本发明的电子装置可包含基板以及设置在基板上的电子元件。根据一些实施例，电子元件可例如包括发光元件、天线元件、感测元件、显示元件或其它合适的电子元件，但不限于此。
请参考图1及图2，图1所示为本发明第一实施例于接合前的电子装置的侧视示意图，且图2所示为本发明第一实施例于接合后的电子装置的侧视示意图。如图1所示，提供一基板102和一发光二极管(light emitting diode，LED)104，且发光二极管包括、量子点发光二极管(Quantum Dot light-emitting diode，QD-LED)、微型发光二极管(包括micro-LED、mini LED)或是其它合适的发光二极管，但不限于此。在某些实施例中，发光二极管上可设置光转换材料，光转换材料例如包括量子点(quantum dot,QD)材料、荧光(fluorescence)材料、彩色滤光(Color filter,CF)材料、磷光(phosphor)材料、其它合适的光转换材料或上述的组合，但不限于此。在某些实施例中，光转换材料例如覆盖发光二极管或与发光二极管对应设置。在某些实施例中，基板102可包括硬式基板、软式基板或上述的组合，但不限于此。在某些实施例中，基板102可包括可弯折或可塑形的基板，例如塑料基板，但不限于此。在某些实施例中，基板102的材料可包括玻璃、石英、有机聚合物、金属、陶瓷、其它合适的材料或上述的组合，但不限于此。若基板102的材质为有机聚合物，例如可包括聚酰亚胺(polyimide，PI)、聚对苯二甲酸乙二酯(polyethylene terephthalate，PET)、聚碳酸酯(polycarbonate，PC)或上述的组合，但不以此为限。
在某些实施例中(如图1)，至少一开关元件106可设置在基板102上，而发光二极管104例如与开关元件106电性连接，但不以此为限。在某些实施例中，开关元件106包括薄膜晶体管或其它合适的元件。在某些实施例中(未绘示)，开关元件106与发光二极管104可例如设置在基板102的不同表面(例如对侧表面)上，而发光二极管104例如与开关元件106电性连接。在某些实施例中，基板102上可设置其他种类的电子元件，例如集成电路(integrated circuit，IC)、电路、导电垫或导线(wire)，但不限于此，而为了让图示更简单或清楚，省略了上述一些电子元件或是保护层。在某些实施例中，电子装置可以为主动式发光二极管(Active matrix，AM-LED)或被动式发光二极管(Passive matrix，PM-LED)。在某些实施例中，基板102上可设置有焊料(solder)112，焊料112可包括金属、合金(alloy)、导电材料或上述组合，但不限于此。举例而言，焊料112可包括锡(Sn)、铟(In)、铋(Bi)或其它合适的材料，例如锡(Sn)和铟(In)的合金或锡(Sn)和铋(Bi)的合金，但不以此为限。若焊料的材料仅包括锡，因锡的熔点较高(大约231.9℃)，于接合时需要较高的温度而容易造成电子元件受到破坏、或降低可靠度。若焊料的材料仅包括铟，虽然铟的熔点较低(大约157℃)，但由于铟的硬度较低，容易产生刮伤而造成接合异常或增高阻抗。在本发明的某些实施例中，焊料112可包括锡和铟，例如锡和铟的合金或化合物，但不以此为限。在某些实施例中，焊料112可包括锡(Sn)和金属元素M，金属元素M包括铟或铋中的其中一者，且焊料112中的锡所占的原子百分比(atomic percent)的范围是40％至85％，可以降低焊料112的熔点(约120℃至200℃)，且提高焊料112的硬度，降低电子元件受到破坏或刮伤的机会。举例来说，当焊料112中的金属元素M为铟时，锡所占的原子百分比可例如为锡所占锡与铟的总合(Sn/(Sn+In))的原子百分比，且锡所占的原子百分比的范围设计为40％至85％。举另一实施例来说，当焊料112中的金属元素M为铋时，锡所占的原子百分比可例如为锡所占锡与铋的总合(Sn/(Sn+Bi))的原子百分比，且锡所占的原子百分比的范围设计为40％至85％。举另一实施例，当焊料112中包括铋与铟时，锡所占的原子百分比可例如为Sn/(Sn+Bi)或是Sn/(Sn+In)两种情况，且锡所占的原子百分比的范围设计为40％至85％。在某些实施例中，可将焊料112中的锡所占的原子百分比的范围调整为60％至85％，即60％Sn/(Sn+In)85％或60％Sn/(Sn+Bi)85％。在某些实施例中，可将焊料112中的锡所占的原子百分比的范围可调整为60％至70％，即60％Sn/(Sn+In)70％或60％Sn/(Sn+Bi)70％。在某些实施例中，可将焊料112中的锡所占的原子百分比的范围调整为70％至80％，即70％Sn/(Sn+In)80％或70％Sn/(Sn+Bi)80％。
另在某些实施例中，在基板102和焊料112之间可设置有接合层110。举例来说，接合层110可例如为凸块下金属(under bump metallurgy，UBM)，但不限于此。在某些实施例中，接合层110可例如用以降低焊料112中的材料扩散至基板102，即可作为障壁层(barrierlayer)。另外，接合层110可例如用以提高基板102和焊料112之间的接合强度或接合附着力，即可作为附着层。另外，接合层110可例如用以降低元件或层别之间的阻抗，例如基板102上的导电垫和焊料112之间的阻抗，提高电流均匀传递的机会，但不限于此。接合层110的材料可包括钛(Ti)、铂(Pt)、镍(Ni)、钨(W)、钯(Pd)、铬(Cr)、金(Au)、银(Ag)、铜(Cu)、铝(Al)、钼(Mo)、上述金属材料的氧化物、透明导电氧化物(如氧化铟锡(ITO)、氧化铟锌(IZO)等)或上述材料的组合，但不限于此。在某些实施例中，基板102和焊料112之间可根据需求移除接合层110。
在某些实施例中(如图1)，发光二极管104上可设置导电结构108。在某些实施例中，导电结构108的材料可包括金、其它合适的金属或上述组合，但不以此为限。当导电结构108的材料包括金时，例如导电结构108为金层时，因金的抗腐蚀特性佳或硬度高，可减少接合不良的现象。在某些实施例中，在发光二极管104和导电结构108之间可设置有接合层114。接合层114可具有相同或相似于上述接合层110的材料及/或功效，但不以此为限。在某些实施例中，于发光二极管104和导电结构108之间可根据需求移除接合层114。
在某些实施例中(未绘示)，如图1中的导电结构108与焊料112的位置可以对调，即导电结构108可设置或形成在基板102上，焊料112可设置或形成在发光二极管104上。详细来说，接合层110、导电结构108可依序设置于基板102上，而接合层114、导电结构108可依序设置于发光二极管104上，后续再将发光二极管104接合于基板102上，但不以此为限。上述元件或层别之间可根据需求加入其它合适的层别。在某些实施例中，可根据需求移除接合层。
如图2所示，在某些实施例中，接合后的导电结构108和焊料112可例如混合形成一焊料合金116，焊料合金116例如为金属间化合物(intermetallic compound，IMC))，但不以此为限。在某些实施例中，焊料合金116可位在接合层114和接合层110之间，但不以此为限。在某些实施例中(未绘示)，当不含有接合层114和接合层110时，焊料合金116可位在基板102和发光二极管104之间。详细来说，焊料合金116的材料可包括导电结构108和焊料112中的元素。在某些实施例中，焊料合金116可包括金、锡和一金属元素M，金属元素M例如为铟和铋的其中一者，但不限于此，且在此焊料合金116中，锡所占锡与金属元素M的总合的原子百分比的范围是60％至90％。举例而言，当金属元素M是铟时，在焊料合金116中，锡所占锡与铟的总合(Sn/(Sn+In))的原子百分比的范围是60％至90％或60％至85％，即60％Sn/(Sn+In)90％或60％Sn/(Sn+In)85％。在某些实施例中，当金属元素M是铋时，在焊料合金116中，锡所占锡与铋的总合的原子百分比的范围是60％至90％或60％至80％，即60％Sn/(Sn+Bi)90％或60％Sn/(Sn+Bi)80％。
本文中所描述的焊料112及/或焊料合金116中的元素的原子百分比可例如经由能量散布分析仪(energy dispersive spectrometer，EDS)、X射线分析仪或其他适合的分析设备量测和计算所得。
下文将继续详述本发明的其它实施例，为了简化说明，下文中使用相同标号标注相同元件。为了突显各实施例之间的差异，以下针对不同实施例间的差异详加叙述，而不再对重复的技术特征作赘述。
请参考图3，其所示为本发明第二实施例于接合前的电子装置的侧视示意图。不同于第一实施例(图1)，在某些实施例(如图3所示)中，接合层114、导电结构1082、焊料1122可依序设置或形成在发光二极管104上，且接合层110、导电结构1081和焊料1121可依序设置或形成在基板102上，但不以此为限。在某些实施例(如图3所示)中，导电结构1082可设置在焊料1122和发光二极管104之间，且导电结构1081可设置在焊料1121和基板102之间，但不以此为限在某些实施例中，当导电结构包括金，且设置于焊料与接合层之间，此导电结构可用以提升焊料与接合层的附着性。举例来说，如图3的导电结构1081、或导电结构1082分别可用以提升焊料1121、焊料1122与其他元件(如接合层110、接合层114)的附着性。
在某些实施例中，如图3的导电结构1081和焊料1121的位置可以对调。在某些实施例中，如图3的导电结构1082和焊料1122位置可以对调。在某些实施例中，可选择性移除接合层114及/或接合层110。当导电结构1082设置在焊料1122的远离发光二极管104的表面上，且导电结构1082的材料包括金时，导电结构1082可保护焊料1122或降低焊料1122被氧化的机会。当导电结构1081设置在焊料1121的的远离基板102的表面上，且导电结构1081的材料包括金时，可保护导焊料1121或降低焊料1121被氧化的机会。
在某些实施例中(图3)，导电结构1081(或导电结构1082)的厚度可小于或等于焊料1121(或焊料1122)的厚度，但不以此为限。需注意的是，上述或后续所叙述的设置于基板102上的元件(或层别)的厚度，可定义为上述元件或层别于基板102的法线方向上的最大厚度。同样的，上述或后续所叙述的设置于发光二极管104上的元件(或层别)的厚度，可定义为上述元件或层别于发光二极管104的法线方向上的最大厚度。而上述元件(或层别)的厚度可通过于任一剖面下的扫描式电子显微镜(scanning electron microscope，SEM)图像来量测，举例来说，A层(待测物)例如位于B层与C层之间，故此SEM图像中例如需显示出至少部分的A层、至少部分的B层与至少部分的C层，其中所显示的A层需具有完整的厚度，且于此SEM图像中所量测的A层的最大厚度来得到A层的厚度，但不限于此。
在某些实施例中(未绘示)，图3中形成于基板102上的焊料1121可例如被移除，即接合层110及导电结构1081依序形成或设置于基板102上。在某些实施例中(未绘示)，图3中形成于发光二极管104的焊料1122可例如被移除，即接合层114及导电结构1082依序形成或设置于发光二极管104上。
在某些实施例中，可根据需求移除接合层110及/或接合层114。在某些实施例中，可根据需求移除焊料1121及导电结构1081中的其中一者。在某些实施例中，可根据需求移除焊料1122及导电结构1082中的其中一者。
请参考图4，其所示为本发明第二实施例于混合前的焊料的示意图。不同于第一实施例，在某些实施例(如图4所示)中，焊料1121、焊料1122可例如是多层导电层1181和多层导电层1182交替堆栈的迭层，其中导电层1181可包括锡，且导电层1182可包括铟、铋或其它合适的材料，但不以此为限。交替堆栈的导电层1181和导电层1182可经由热接合(thermalbonding)或回火(annealing)制程来形成合金或化合物(如第一实施例中的焊料112)。在某些实施例中，不同的导电层1181的厚度可以相同或不同，且不同的导电层1182的厚度可以相同或不同。焊料1121、焊料1122中各元素所占的比例可例如通过调整导电层1181和导电层1182的层别数量及/或厚度来调整，但不以此为限。在某些实施例中，亦可堆栈一层导电层1181和一层导电层1182以形成焊料，但不以此为限。
请参考图5A，其所示例如为本发明第二实施例于接合后的电子装置的侧视示意图。不同于第一实施例，在某些实施例(如图5A所示)中，至少部分焊料和至少部分导电结构(例如包括金层或是包括金的导电层，但不限于此)可以混合形成焊料合金116，所以焊料合金116中可包含金，而锡所占锡与金属元素M的总合的原子百分比的范围介于60％至90％的合金定义为焊料合金116。在某些实施例中，焊料中未形成焊料合金116的部分为层1201，而导电结构中未形成焊料合金116的部分为层1202(例如包括金层)，且层1201和层1202的厚度及材料可以相同或不同，但不限于此。在某些实施例中(图5)，如左半部的迭构，层1201和层1202可分别位在焊料合金116的两侧，层1202例如设置在焊料合金116和基板102之间，以及层1201例如设置在焊料合金116和发光二极管104之间，但不以此为限。在某些实施例中，层1201和层1202的位置可以对调。在某些实施例中(图5)，如右半部的迭构，层1202(例如包括金层)和层1202(例如包括金层)可分别位在焊料合金116的两侧，即层1202例如设置在焊料合金116和基板102之间，以及层1202例如设置在焊料合金116和发光二极管104之间，且层1202和层1202的厚度及材料可以相同或不同。在某些实施例中(未绘示)，焊料合金116的两侧可分别设有层1201，即层1201例如设置在焊料合金116和基板102之间，以及层1201例如设置在焊料合金116和发光二极管104之间，且层1201和层1201的厚度及材料可以相同或不同。需注意的是，图5的左半部的迭构与右半部的迭构仅为示意说明有不同的层迭状况，但不限右半部的迭构与左半部的迭构不同，在某些实施例中，右半部的迭构与左半部的迭构可以相同。
请参考图5B，其所示例如为本发明第三实施例于接合后的电子装置的侧视示意图。不同于第一实施例，在某些实施例中(图5B)，接合后的电子装置10可包括层1201而未包括层1202。举例而言，电子装置10可包括层1201，层1201例如设置在焊料合金116和基板102之间，或层1201例如设置在焊料合金116和发光二极管104之间。在某些实施例中(未绘示)，电子装置可包括层1202而未包括层1201，且层1202例如设置在焊料合金116和发光二极管104之间，或层1201例如设置在焊料合金116和基板102之间。在某些实施例中(未绘示)，层1201的数量可以大于或等于1，层1202的数量可以大于或等于1及/或焊料合金116的数量可以大于或等于1，但不限于此，且层1201、层1202与焊料合金116相对位置可以根据接合状况而有所条件，本发明并不限制。
请参考图6，其所示为本发明第三实施例于接合前的电子装置的侧视示意图。不同于第一实施例，在某些实施例(如图6所示)中，接合层114、导电结构1082、焊料1122、和导电结构1084可依序形成或设置在发光二极管104上，且接合层110、导电结构1081、焊料1121和导电结构1083可依序形成或设置在基板102上，但不以此为限。上述元件或层别之间可根据需求插入或增加其它合适的层别(例如其它导电结构、其它焊料，但不限于此)，或可根据需求移除接合层或金属层。在某些实施例(如图6所示)中，导电结构1081、导电结构1082、导电结构1083、及/或导电结构1084的厚度可小于或等于焊料1121、焊料1122、接合层110及/或接合层114的厚度，但不以此为限。在某些实施例中，导电结构1081、导电结构1082、导电结构1083、及/或导电结构1084的厚度可以相同或不同。在某些实施例中，导电结构1081、导电结构1082、导电结构1083、及/或导电结构1084的材料可以相同或不同。
请参考图7A及图7B，图7A所示为本发明一实施例通过能量散布分析仪量测的侧视示意图，图7B为沿着图7A的箭头方向量测焊料合金的分析结果。图7A所示的箭头方向为量测的方向，但不限于此，量测的方向或位置可根据需求做改变。图7B绘示一实施例以能量散布分析仪的强度(Intensity；cps)与距离(um)的关系图。在某些实施例中(图7A)，由最邻近发光二极管104的层别或元件(例如接合层114)量测至最邻近基板102的层别或元件(例如接合层110)。举例来说，如依序量测接合层114、层1202、焊料合金116、层1201及接合层110中各元素的含量或比例而得出图7B的强度(Intensity；cps)与距离的关系图，且符合锡与金属元素M(例如铟和铋的其中一者)的总合的原子百分比的范围介于60％至90％的合金定义为焊料合金116。例如，以如图7B的线116-c1及线116-c2来定义出焊料合金116的区域。另外，对于锡与金属元素M的总合的原子百分比的范围的计算方式，本发明仅举其中一种计算方式来说明，但不限于此。例如，根据图7B中对于距离为3um的焊料合金116做计算，此位置中的锡(Sn)的强度(cps)例如约为95，而此位置中的铟(In)的强度(cps)约为30，代入公式后得到锡与铟的总合的的原子百分比的范围为76％((Sn/(Sn+In)＝95/(95+30)＝0.76＝76％)。在某些实施例中，可例如根据两元素的曲线交界处来定义出不同层别之间的区分线，但不限于此。举例来说，如图7B中，例如以两元素(例如镍Ni与锡Sn)的曲线交界处画出线1202-c，而两元素(例如镍Ni与金Au)的曲线交界处画出线1201-c，而介于线1202-c及线116-c1之间的区域例如为层1202，而介于线1201-c及线116-c2之间的区域例如为层1201，而以线1202-c作区分线的另一部分(与层1202不同的部分)可例如为接合层114，而以线1201-c作区分线的另一部分(与层1201不同的部分)可例如为接合层110，但不限于此。在某些实施例中，可例如根据所使用的接合层、导电结构、焊料的材料，搭配分析结果来比对，且通过上述的定义方式得到焊料合金116、层1201、层1202、接合层110及/或接合层114的区域，但不限于此。
在某些实施例中(同时参考图7B)，当接合层114材料包括钛(Ti)与镍(Ni)，且焊料的材料包括锡(Sn)与铟(In)时，可例如以镍(Ni)与锡(Sn)两元素的的曲线交界处画出线1202-c，但不限于此。在某些实施例中(参考图7B)，当接合层110材料包括钛(Ti)与镍(Ni)，且导电结构的材料包括金(Au)时，可例如以镍(Ni)与金(Au)两元素的曲线交界处画出线1201-c，但不限于此。
需注意的是，本发明不限制如图7A以箭头方向的量测方式，在某些实施例中(未绘示)，可例如由邻近基板102的层别或元件量测至最邻近发光二极管104的层别或元件(例如接合层114)或随机的位置进行量测。需注意的是，图7B的各层所对应的距离仅为示意，在某些实施例中，接合层110或接合层114的厚度例如大于焊料合金116、层1201及/或层1202的厚度。需注意的是，图7B仅为举例其中一可能的结果，在某些实施例中，不同层别间可根据的接合层、金属层、焊料的层别数量、厚度、材料、接合温度等而有不同的元素比例，但不限于此。同理，于本发明实施例中各层别(不限接合前或接合后)的元素比例，亦可使用相似的方式来分析。
综上所述，本发明的电子装置的焊料可包括锡和铟(或锡和铋)的合金或化合物，此焊料因可降低熔点，而可应用于低温的接合制程以降低电子元件受到破坏、或可提高焊料硬度而减少刮伤形成，进而提升电子装置的合格率或可靠度。此外，接合后的焊料合金可包括锡和金属元素M，金属元素M例如为铟和铋的其中一者，且在焊料合金中，锡所占锡与金属元素M的总合原子百分比的范围是60％至90％。
以上所述仅为本发明的实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
虽然本发明的实施例及其优点已发明如上，但应该了解的是，任何所属技术领域中具有通常知识者，在不脱离本发明的精神和范围内，当可作更动、替代与润饰。此外，本发明的保护范围并未局限于说明书内所述特定实施例中的制程、机器、制造、物质组成、装置、方法及步骤，任何所属技术领域中具有通常知识者可从本发明揭示内容中理解现行或未来所发展出的制程、机器、制造、物质组成、装置、方法及步骤，只要可以在此处所述实施例中实施大抵相同功能或获得大抵相同结果皆可根据本发明使用。

Claims (10)

1.一种电子装置，其特征在于，包括：
一基板；以及
一发光二极管，所述发光二极管通过一焊料合金接合在所述基板上；
其中所述焊料合金包括锡和一金属元素M，所述金属元素M为铟和铋的其中一者，且在所述焊料合金中，锡所占锡与所述金属元素M的总合的原子百分比的范围是60％至90％。
2.如权利要求1所述的电子装置，其特征在于，所述金属元素M是铟。
3.如权利要求2所述的电子装置，其特征在于，锡所占锡与铟的总合的原子百分比的范围是60％至85％。
4.如权利要求1所述的电子装置，其特征在于，所述金属元素M是铋。
5.如权利要求4所述的电子装置，其特征在于，锡所占锡与铋的总合的原子百分比的范围是60％至80％。
6.如权利要求1所述的电子装置，其特征在于，所述焊料合金更包括金。
7.如权利要求1所述的电子装置，其特征在于，还包括一第一金层，该第一金层设置在所述焊料合金和所述基板之间。
8.如权利要求1所述的电子装置，其特征在于，还包括一第二金层，该第二金层设置在所述焊料合金和所述发光二极管之间。
9.如权利要求1所述的电子装置，其特征在于，所述基板是一薄膜晶体管基板。
10.如权利要求1所述的电子装置，其特征在于，还包括一接合层，该接合层设置在所述焊料合金和所述基板之间或所述焊料合金和所述发光二极管之间。
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