TW200739771A - Semiconductor device with improved solder joint - Google Patents

Semiconductor device with improved solder joint

Info

Publication number
TW200739771A
TW200739771A TW096104110A TW96104110A TW200739771A TW 200739771 A TW200739771 A TW 200739771A TW 096104110 A TW096104110 A TW 096104110A TW 96104110 A TW96104110 A TW 96104110A TW 200739771 A TW200739771 A TW 200739771A
Authority
TW
Taiwan
Prior art keywords
solder
solder joint
copper
semiconductor device
compounds
Prior art date
Application number
TW096104110A
Other languages
English (en)
Inventor
Masazumi Amagai
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of TW200739771A publication Critical patent/TW200739771A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
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    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10992—Using different connection materials, e.g. different solders, for the same connection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
TW096104110A 2006-02-03 2007-02-05 Semiconductor device with improved solder joint TW200739771A (en)

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US11/346,728 US7626274B2 (en) 2006-02-03 2006-02-03 Semiconductor device with an improved solder joint

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464031B (zh) * 2011-12-14 2014-12-11 Univ Yuan Ze 抑制柯肯達爾孔洞形成於銲料與銅銲墊之間的方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080258285A1 (en) * 2007-04-23 2008-10-23 Texas Instruments Incorporated Simplified Substrates for Semiconductor Devices in Package-on-Package Products
JP5438114B2 (ja) * 2008-09-18 2014-03-12 アイメック 材料ボンディングのための方法およびシステム
US8212349B2 (en) * 2009-12-29 2012-07-03 Powertech Technology Inc. Semiconductor package having chip using copper process
TWI466251B (zh) * 2010-12-28 2014-12-21 Ind Tech Res Inst 半導體裝置及其組裝方法
JP6046406B2 (ja) * 2011-07-26 2016-12-14 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 高温耐性銀コート基体
US20130099371A1 (en) * 2011-10-21 2013-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package having solder jointed region with controlled ag content
JP6165411B2 (ja) 2011-12-26 2017-07-19 富士通株式会社 電子部品及び電子機器
US20130241058A1 (en) * 2012-03-16 2013-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Wire Bonding Structures for Integrated Circuits
US9024453B2 (en) 2012-03-29 2015-05-05 Intel Corporation Functional material systems and processes for package-level interconnects
TWI498975B (zh) * 2012-04-26 2015-09-01 Asian Pacific Microsystems Inc 封裝結構與基材的接合方法
JP5594324B2 (ja) 2012-06-22 2014-09-24 株式会社村田製作所 電子部品モジュールの製造方法
US20150041183A1 (en) * 2013-08-06 2015-02-12 Kinsus Interconnect Technology Corp. Chip board package structure
JP6282454B2 (ja) * 2013-12-10 2018-02-21 新光電気工業株式会社 半導体パッケージの製造方法
JP2016141611A (ja) * 2015-02-04 2016-08-08 旭硝子株式会社 接合用組成物
WO2019044752A1 (ja) * 2017-08-29 2019-03-07 京セラ株式会社 回路基板およびこれを備える電子装置
US10692830B2 (en) * 2017-10-05 2020-06-23 Texas Instruments Incorporated Multilayers of nickel alloys as diffusion barrier layers
US10784203B2 (en) 2017-11-15 2020-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and method
US11476399B2 (en) 2017-11-29 2022-10-18 Panasonic Intellectual Property Management Co., Ltd. Jointing material, fabrication method for semiconductor device using the jointing material, and semiconductor device
CN111916550B (zh) * 2019-05-09 2023-02-03 群创光电股份有限公司 电子装置
CN116313834B (zh) * 2023-05-24 2023-09-12 江西兆驰半导体有限公司 晶圆级封装方法及晶圆级封装结构

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468655A (en) * 1994-10-31 1995-11-21 Motorola, Inc. Method for forming a temporary attachment between a semiconductor die and a substrate using a metal paste comprising spherical modules
AU6279296A (en) * 1996-06-12 1998-01-07 International Business Machines Corporation Lead-free, high tin ternary solder alloy of tin, silver, and indium
US6179935B1 (en) 1997-04-16 2001-01-30 Fuji Electric Co., Ltd. Solder alloys
US6087714A (en) * 1998-04-27 2000-07-11 Matsushita Electric Industrial Co., Ltd. Semiconductor devices having tin-based solder film containing no lead and process for producing the devices
GB2346380B (en) * 1999-01-28 2001-07-11 Murata Manufacturing Co Lead-free solder and soldered article
US6376901B1 (en) * 1999-06-08 2002-04-23 Texas Instruments Incorporated Palladium-spot leadframes for solder plated semiconductor devices and method of fabrication
US6365973B1 (en) * 1999-12-07 2002-04-02 Intel Corporation Filled solder
JP2001205476A (ja) * 2000-01-27 2001-07-31 Sumitomo Metal Mining Co Ltd 合金ろう材
JP2002057177A (ja) * 2000-08-09 2002-02-22 Hitachi Metals Ltd はんだボールおよびその製造方法
KR100398716B1 (ko) * 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 반도체 모듈 및 반도체 장치를 접속한 회로 기판
JP3897596B2 (ja) * 2002-01-07 2007-03-28 日本テキサス・インスツルメンツ株式会社 半導体装置と配線基板との実装体
US7205647B2 (en) * 2002-09-17 2007-04-17 Chippac, Inc. Semiconductor multi-package module having package stacked over ball grid array package and having wire bond interconnect between stacked packages
JP4144415B2 (ja) * 2003-01-07 2008-09-03 千住金属工業株式会社 鉛フリーはんだ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464031B (zh) * 2011-12-14 2014-12-11 Univ Yuan Ze 抑制柯肯達爾孔洞形成於銲料與銅銲墊之間的方法

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EP1987540A4 (en) 2018-09-19
EP1987540A2 (en) 2008-11-05
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US7786599B2 (en) 2010-08-31
WO2007092762A2 (en) 2007-08-16
US20100291734A1 (en) 2010-11-18
US20070182006A1 (en) 2007-08-09
US20100032840A1 (en) 2010-02-11
US7884009B2 (en) 2011-02-08

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