CN101373720A - 制造半导体器件的方法 - Google Patents

制造半导体器件的方法 Download PDF

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Publication number
CN101373720A
CN101373720A CNA2008102158527A CN200810215852A CN101373720A CN 101373720 A CN101373720 A CN 101373720A CN A2008102158527 A CNA2008102158527 A CN A2008102158527A CN 200810215852 A CN200810215852 A CN 200810215852A CN 101373720 A CN101373720 A CN 101373720A
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China
Prior art keywords
interconnection
layer
insulating resin
seed metal
via plug
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CNA2008102158527A
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CN101373720B (zh
Inventor
川野连也
副岛康志
栗田洋一郎
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Renesas Electronics Corp
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NEC Corp
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    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
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Abstract

本发明涉及一种制造半导体器件的方法。根据本发明的一个实施例的制造方法包括：在支撑基片(70)上形成种子金属层(20a)，在种子金属层(20a)上形成包括互连(18)的互连层(10)，在形成互连层(10)之后除去支撑基片(70)，以及在除去支撑基片之后，对种子金属层(20a)进行图形化以形成互连(20)。

Description

制造半导体器件的方法
本申请是申请日为2006年7月26日、申请号为200610107566.X、题为“半导体装置及其制造方法”的中国专利申请的分案申请。
本申请基于日本专利申请第2005-215409号，其内容通过参考在此被并入本文。
技术领域
本发明涉及一种半导体器件及其制造方法。
背景技术
到目前为止所研发的制造半导体器件的方法包括在日本未审专利申请第2005-101137号(专利文献1)和第H08-167629号(专利文献2)中所公开的方法。根据前者，互连层形成在超薄铜箔上，该超薄铜箔配置在由支撑层和载体铜箔所构成的支撑基片上。然后在分界面处将支撑基片从超薄铜箔上剥离，因而使得支撑基片与互连层分离，此后从互连层上除去超薄铜箔。
根据后者，在转移基片上以预定图案形成互连，并且在其上放置了半导体基片的情况下，该互连被密封在树脂中。然后在转移基片与互连之间的分界面处将转移基片从互连上剥离，因此使得转移基片与半导体封装分离。
发明内容
本发明的发明人发现前述现有技术具有以下缺点。通过根据专利文献1的方法，超薄铜箔最终被从互连层上除去，因而使得超薄铜箔变成废品。这会导致半导体器件制造费用的增加。
根据专利文献2，它是一个形成于转移基片上的经图形化的互连层。因此，当在第一互连上提供绝缘层之后，在这个互连上形成另一互连从而建立互连层的时候，由于形成在转移基片上的第一互连的不平整性而导致该互连层的平面度劣化。
根据本发明，提供了一种制造半导体器件的方法，包括：在支撑基片上形成种子金属层；在所述种子金属层上形成包括第一互连的互连层；在形成所述互连层之后除去所述支撑基片；和在除去所述支撑基片之后，对所述种子金属层进行图形化以形成第二互连。
通过这样安排的方法，在种子金属层上对互连进行图形化，以由此形成第二互连。这种方法允许使用种子金属层作为将被制造的半导体器件中的互连，而不是作为废品被除去。而且，除了该种子金属层以外，该方法不需要提供用于形成第二互连的任何额外的金属层。因此，所提出的方法抑制了制造费用的增加。
而且在对其图形化之前，在种子金属层上形成互连层。因此，该互连层形成于平坦的种子金属层上，因而该互连层获得了较高的平面度。
根据本发明，提供了一种半导体器件，包括：绝缘树脂层，其配置有第一通孔插塞；粘性导电薄膜，其配置在所述绝缘树脂层和所述第一通孔插塞的第一表面上；第一互连，其配置在所述粘性导电薄膜上并且电连接到所述第一通孔插塞；以及第二互连，其直接配置在所述绝缘树脂层的第二表面上并且电连接到所述第一通孔插塞。
因此，本发明提供了一种半导体器件，其包括：具有较高平面度的互连层，以及制造这种半导体器件的方法，而没有引起任何制造成本的增加。
附图说明
结合附图根据以下详细的描述可以清楚了解本发明的上述和其它目的、优点和特性，其中：
图1示出了根据本发明实施例的半导体器件的横截面示意图；
图2A和2B逐步地示出了制造图1所示的半导体器件的方法的横截面示意图；
图3A和3B逐步地示出了制造图1所示的半导体器件的方法的横截面示意图；
图4A和4B逐步地示出了制造图1所示的半导体器件的方法的横截面示意图；
图5A和5B逐步地示出了制造图1所示的半导体器件的方法的横截面示意图；
图6示出了制造图1所示的半导体器件的方法的横截面示意图；
图7示出了根据比较例子的半导体器件的横截面示意图；
图8示出了根据另一比较例子的半导体器件的横截面示意图；
图9示出了根据实施例的半导体器件的变形的横截面示意图；
图10示出了根据实施例的半导体器件的另一个变形的横截面示意图；
图11示出了根据实施例的半导体器件的又一个变形的横截面示意图；
图12示出了根据实施例的半导体器件的再一个变形的横截面示意图；
图13示出了根据实施例的半导体器件的再一个变形的横截面示意图；
图14示出了根据实施例的半导体器件的再一个变形的横截面示意图；
图15示出了根据实施例的半导体器件的再一个变形的横截面示意图；
图16示出了根据实施例的半导体器件的再一个变形的横截面示意图；
图17示出了根据实施例的半导体器件的再一个变形的横截面示意图；
图18示出了根据实施例的半导体器件的再一个变形的横截面示意图；和
图19示出了根据实施例的半导体器件的再一个变形的横截面示意图。
具体实施方式
在此参考示意性的各具体实施例来描述本发明。本领域技术人员可以认识到，使用本发明的教导可以实现许多可选实施例并且本发明不限于用于解释目的所说明的各实施例。
以下，将会参考附图描述根据本发明的半导体器件及其制造方法的各示例性实施例。在附图中，相同的组成部分给出相同的附图标记，并且适当的情况下省略了重复的描述。
图1示出了根据本发明实施例的半导体器件的横截面示意图。半导体器件1包括互连层10、互连20、半导体芯片30、焊球40以及密封树脂50。互连层10包括绝缘树脂层12、通孔插塞(via plug)14、粘性导电薄膜16以及互连18。
适于构成绝缘树脂层12的材料包括PBO(polybenzooxazole，聚苯并噁唑)和聚酰亚胺树脂。聚酰亚胺树脂可以是光敏聚酰亚胺树脂或者非光敏聚酰亚胺树脂。绝缘树脂层12包括通孔插塞14(第一通孔插塞)。该通孔插塞14穿透绝缘树脂层12。在本实施例中，通孔插塞14由铜制成。
在绝缘树脂层12的一个表面S1(第一表面)上，提供粘性导电薄膜16(第一粘性导电薄膜)。粘性导电薄膜16连接到每个通孔插塞14的端部。在本实施例中，粘性导电薄膜16是一种包括多个金属层的粘性金属层。粘性导电薄膜16的顶层(与互连18接触的层)优选由与构成互连18的金属相同的金属构成。在本实施例中，粘性导电薄膜16包括两层，它们是钛薄膜和铜薄膜。换句话说，粘性导电薄膜16包括配置在表面S1上的钛薄膜以及配置在钛薄膜上的铜薄膜。
在粘性导电薄膜16上，配置了互连18(第一互连)。在本实施例中，互连18是铜互连。这种互连18通过粘性导电薄膜16电连接到通孔插塞14上。
在绝缘树脂层12的另一个表面(第二表面)S2上，配置了互连20(第二互连)以与绝缘树脂层12直接接触。互连20直接连接到通孔插塞14的另一端部(与粘性导电薄膜16相对)，用于电连接。特别是，互连20和通孔插塞14是由相同的金属(在本实施例中是铜)制成的以便成为一体。因此，设置互连20以与绝缘树脂层12和通孔插塞14直接接触，而没有粘性导电薄膜或者阻挡层金属的中间介质。互连20可以作为接地平面使用。在互连20上配置抗蚀膜62。
这里，在半导体器件1中，绝缘树脂层12的表面不是粗糙的。因此，在绝缘树脂层12的光滑表面上配置粘性导电薄膜16和互连20。同样，通孔插塞14的导通孔的侧壁也不是粗糙的。因此，在绝缘树脂层12和通孔插塞14之间的分界面也是光滑的。
在绝缘树脂层12的表面S1一侧上配置半导体芯片30。半导体芯片30通过焊料32连接到互连18。这里，在表面S1上配置阻焊剂64以覆盖粘性导电薄膜16和互连18。焊料32通过由阻焊剂64所提供的开口连接互连18和半导体芯片30。半导体芯片30设置在阻焊剂64上，在它们之间具有间隙。在半导体芯片30和阻焊剂64之间的间隙用底部填充(underfill)树脂66填充。
在绝缘树脂层12的表面S2侧上配置了焊球40。焊球40连接到那些没有与互连20相连接的通孔插塞14上。焊球40用作半导体器件1的外部电极端子。
在阻焊剂64上配置了密封树脂50以覆盖半导体芯片30。在本实施例中，密封树脂50覆盖半导体芯片30的整个侧部和上部表面。
现在将要参考图2A到6描述制造这种半导体器件1的方法，该方法作为制造根据本发明的半导体器件的方法的实施例。首先，通过溅射工艺等在支撑基片70上形成种子(seed)金属层20a。在这个步骤中，可以在支撑基片70和种子金属层20a之间形成脱离层。在本实施例中，支撑基片70是硅基片(图2A)。
然后，将绝缘树脂例如光敏聚酰亚胺涂覆到种子金属层20a上，此后烘焙该绝缘树脂。例如，烘焙温度可以设置在例如350摄氏度。在这个阶段，获得绝缘树脂层12。在绝缘树脂层12上，通过光刻蚀法等形成导通孔13(图2B)。
充填导通孔13以形成通孔插塞14。可以使用种子金属层20a作为供给层(feeding layer)(图3A)，通过电镀形成通孔插塞14(图3A)。这里，通孔插塞14不必完全填满导通孔13，换句话说，可以这样形成通孔插塞14以由此从绝缘树脂层12的表面限定了一个凹陷。
在已经形成通孔插塞14的绝缘树脂层12上，通过已知工艺例如溅射或者CVD依次淀积钛薄膜和铜薄膜。然后，在铜薄膜上形成抗蚀膜，此后形成穿过抗蚀膜的开口。这些开口位于将设置互连18的位置上。在这种状态下，例如，对用作种子层的种子金属层20a进行电镀，以便因此在开口中形成互连18。然后，对抗蚀膜、铜薄膜和钛薄膜进行回蚀刻以形成粘性导电薄膜16和互连18。这种回蚀刻工艺可以是采用硫酸和过氧化氢的混合溶剂、或者HF(氟化氢)作为蚀刻溶剂的湿蚀刻工艺。在这个阶段，获得互连层10。
然后，在绝缘树脂层12上形成阻焊剂64以覆盖粘性导电薄膜16和互连18，并且通过光刻蚀法等穿过阻焊剂64形成开口31(图3B)。
然后，通过开口31将半导体芯片30的电极(焊料32)连接到互连18，从而使得半导体芯片30固定在互连层10上。在本实施例中，尽管未示出，但是可以以预定间隔在互连层10上固定多个半导体芯片30。此后，使用底部填充树脂66充填半导体芯片30和阻焊剂64之间的间隙(图4A)。然后，提供密封树脂50以覆盖所有的半导体芯片30(图4B)。
现在，除去支撑基片70(图5A)。使用已知工艺例如研磨、CMP或者蚀刻来执行该除去步骤。这些工艺可以组合使用，例如，在研磨支撑基片70之后，通过CMP或者蚀刻或者通过二者结合来除去剩余的部分。尽管在除去的最后阶段采用干蚀刻能够设置较大的蚀刻选择性，由此有利于稳定地保留种子金属层20a，但是也可以采用干蚀刻或者湿蚀刻中的任一种。可选的，支撑基片70可以在与种子金属层20a的分界面处被脱离。由此除去支撑基片70。此外，在除去支撑基片70之后，可以使用种子金属层20a作为供给层进行电镀，以便在种子金属层20a上形成金属膜。一旦在除去支撑基片70之后进行切割以将半导体芯片30分割成单个芯片，那么能够获得图5A所示的多层结构。
然后，在种子金属层20a上通过丝网印刷等形成抗蚀膜62，用于对种子金属层20a进行图形化。这里，可以涂覆抗蚀材料，然后通过激光磨蚀在其上描绘图案，从而形成抗蚀膜62(图5B)。
其后，例如使用抗蚀膜62作为掩膜，通过湿蚀刻将种子金属层20a图形化成互连20(图6)。这里，一旦形成互连20，则可以除去抗蚀膜62并且可以进行化学镀(化学镀)工艺，以在互连20上形成金属膜。然后，通过形成焊球40，获得图1所示的半导体器件1。
上述实施例提供了以下有益的效果。在本实施例中，对种子金属层20a进行图形化，因此形成了互连20。因此，在半导体器件1中，留下了种子金属层20a用作互连20，而不是被除去。而且，除了种子金属层20a以外，不需要提供任何额外的用于形成互连20的金属膜。因而，所提出的方法抑制了制造成本的增加。
而且，在图形化工艺之前，在种子金属层20a上形成互连层10。因此，互连层10形成于平坦的种子金属层20a上，因此互连层获得了较高的平面度。因而，上述实施例提供了半导体器件1，其包括具有较高平面度的互连层10，以及提供了一种不会引起任何制造成本增加的制造这种半导体器件的方法。
通过粘性导电薄膜16，在绝缘树脂层12上形成互连18。因此，粘性导电薄膜16的插入提高了在绝缘树脂层12和互连18之间的粘性。
当形成绝缘树脂层12时，首先将绝缘树脂涂覆到种子金属层20a上，然后烘焙绝缘树脂。这种工艺提高了在种子金属层20a和绝缘树脂层12之间的粘性。这进一步提高了半导体器件1中互连20和绝缘树脂层12之间的粘性。
因此，这样安排的方法消除了插入粘性导电薄膜或者使绝缘树脂层12的表面变粗糙的需要，从而确保在互连20和绝缘树脂层12之间的充分粘着。这会降低电阻(例如互连阻抗)并且提升了高频传输特性。
实际上，在半导体器件1中，通过粘性导电薄膜16在绝缘树脂层12上配置互连18，同时设置互连20与绝缘树脂层12直接接触。这种结构保证了相应的互连18、20与绝缘树脂层12之间极好的粘着性，还降低了电阻且实现了半导体器件1的高频传输特性。
参考图7和8进一步描述这些方面。图7和8示出了与半导体器件1相比较的半导体器件的横截面图。在图7中，绝缘树脂层101包括通孔插塞102。在绝缘树脂层101的相应表面上，配置了与通孔插塞102相连接的互连103和104。半导体芯片111和焊球112分别连接到互连103和104。
这里，分别在通孔插塞102与每个互连103和104之间，以及在绝缘树脂层101与每个互连103和104之间提供阻挡层金属105。同样，在绝缘树脂层101与通孔插塞102之间也提供阻挡层金属105。但是，这种结构会引起电阻的升高，尤其在通孔插塞102和互连103、104之间的节点处。除此之外，在那些节点处的连接可靠性也降低了。
接下来参考图8，提供通孔插塞203，以覆盖穿过绝缘树脂层201形成的导通孔202的侧壁。在绝缘树脂层201的相应表面上，提供连接到通孔插塞203的互连204和205。半导体芯片211和焊球212分别连接到互连204和205。
这里，将绝缘树脂层201的表面粗糙化为粗糙化的树脂表面206。因此，在粗糙化的树脂表面206上提供了通孔插塞203和互连204、205。但是，这种结构会引起通孔插塞203和互连204、205的电阻都升高。除此之外，会发生电子散射，因而降低了高频传输特性。
与这些比较实施例不同，在半导体器件1，绝缘树脂层12和互连20的分界面没有粘性导电薄膜或阻挡层金属。而且，绝缘树脂层12的表面也没有经受粗糙化处理，而是平滑的。因而，半导体器件1能够抑制电阻的升高，同时提升了在通孔插塞和互连之间的连接可靠性，并且获得优异的高频传输特性。
使用种子金属层20a作为供给层进行电镀，以便形成通孔插塞14，这便于获得通孔插塞14和由同等金属所形成的互连20的整体结构。这种结构能够抑制通孔插塞14和互连20之间的电阻升高，并且也能够提升在通孔插塞14和互连20之间的连接可靠性。
在用于构成绝缘树脂层12的光敏聚酰亚胺树脂上进行光刻蚀工艺，这能够以非常细微的间距精确地形成通孔插塞14。
半导体器件1包括覆盖半导体芯片30的密封树脂50。这种结构提高了半导体器件1的机械强度。尤其在本实施例中，密封树脂50覆盖半导体芯片30的整个侧部和上部表面。这样保持半导体芯片30不向外暴露，由此会提升半导体器件1的可靠性。但是，提供密封树脂50不是强制的。
而且，当制造半导体器件1时，提供密封树脂50以便共同覆盖多个半导体芯片30，该多个半导体芯片30随后通过切割被分割成单个芯片。与使用树脂单独密封每个半导体芯片30相比，这种方法简化了制造工艺。而且在除去支撑基片70之前提供密封树脂50便于在除去支撑基片70以后对单个芯片进行处理。
优选地，从降低制造成本的观点考虑，可以采用湿蚀刻工艺对种子金属层20a进行图形化以形成互连20。这是由于互连20被配置在绝缘树脂层12的表面S2的一侧上，即在配置焊球40的一侧上，因此不必像在配置半导体芯片30的表面S1一侧上所形成的互连18那样严格地精确。因此，湿蚀刻仍然能够确保足够精确地形成互连20。
在除去支撑基片70之后，用种子金属层20a作为供给层进行电镀，从而在种子金属层20a上形成金属膜，这允许通过简单的方法将种子金属层20a的厚度(即互连20)增加到期望的程度。同样，在形成互连20之后进行化学镀(化学镀)工艺，从而在互连20上形成金属膜，这还允许将种子金属层20a的厚度增加到期望的程度。
在上述制造方法中，在支撑基片70和种子金属层20a之间插入脱离层，为随后除去支撑基片70提供了方便。例如，在除去支撑基片70的步骤中，采用热分解材料作为脱离层能够通过施加比脱离层的热分解温度高的温度，来简单地就将种子金属层20a和支撑基片70分离。这里，优选采用一种用于局部加热的激光。设定激光波长以使得通过支撑基片70而不是通过脱离层来传输该激光，这能够局部单独加热脱离层。可选地，可以事先选择这样的材料：该材料可以使支撑基片70和脱离层之间的分界面、或者脱离层和种子金属层20a之间的分界面的粘着强度降低，从而在除去支撑基片70的步骤中，可以通过施加机械力来除去支撑基片70。另一个选择是采用一种材料作为脱离层，这种材料在特定溶剂中溶解或者通过特定溶剂的渗透来急剧降低与种子金属层20a或支撑基片70的粘着性，并且使得这种溶剂从脱离层的侧面侵入，以由此分离支撑基片70。
在半导体器件1中使用互连20作为接地平面，这确保了宽广的屏蔽表面，因而进一步提升了高频传输特性。
根据本发明的半导体器件及其制造方法并不限于前述实施例，而可以作出各种修改。为了引用一些实例，如图9所示，不仅在绝缘树脂层12的表面S1一侧也可以在表面S2侧配置半导体芯片80(第二半导体芯片)。在图9中，半导体芯片80通过焊料82连接到通孔插塞14。
而且如图10所示，可以在绝缘树脂层12的表面S2一侧上配置另一个通孔插塞92(第二通孔插塞)，其具有连接到通孔插塞14的端部。在图10中，配置绝缘薄膜68以覆盖互连20，从而使得通孔插塞92被埋入穿过绝缘薄膜68所形成的开口中。通孔插塞92是这样的锥形形状：随着接近于通孔插塞14，该锥形的横截面面积逐渐减小。这里，通孔插塞14和通孔插塞92彼此以不同的金属构成。而且，通孔插塞14和通孔插塞92通过粘性导电薄膜(第二粘性导电薄膜，未示出)而相互连接。在绝缘树脂层12的表面S2侧上淀积的树脂层(未示出)上配置这种粘性导电薄膜。与粘性导电薄膜16一样，该粘性导电薄膜包括互相层叠的多层金属膜。而且，在绝缘薄膜68上，配置了连接到通孔插塞92的另一端部(与通孔插塞14相对)的电极焊盘94。在电极焊盘94上配置焊球96。
进一步，如图11所示，半导体器件1可以包括连接到通孔插塞92的另一端的互连98(第三互连)。换句话说，半导体器件1可以包括位于绝缘树脂层12的表面S2一侧上的多层互连。互连98位于在绝缘薄膜68上所提供的绝缘薄膜69中。焊球99连接到互连98。每个焊球99部分地埋入到绝缘薄膜69中。
在图10和11中，相对的通孔插塞14和92可以呈相对的锥形形状，该锥形穿越了与互连20的上表面(绝缘树脂层12的表面S2一侧)一致的边界线。换句话说，如图12和13所示，通孔插塞14可以呈这样的锥形形状：以至于随着越来越接近通孔插塞92其横截面面积逐渐减小，同时通孔插塞92可以呈这样的锥形形状：以至于随着越来越接近通孔插塞14其横截面面积逐渐减小。这种结构源于以互相相对的方向形成通孔插塞14的通孔和通孔插塞92的通孔的制造工艺。具体地，根据该图的方位，向下形成前者，同时根据该图的方位，向上形成后者。
根据本发明的半导体器件可以包括三个或更多个半导体芯片。图14和15分别描述了包括三个和四个半导体芯片的半导体器件。除了半导体芯片30和半导体芯片80(参考图9)以外，图14所示的半导体器件还包括配置在半导体芯片30上的半导体芯片81(第三半导体芯片)。半导体芯片81通过焊线83连接到互连18。在图14中，在半导体芯片80和绝缘树脂层12之间的间隙是用底部填充树脂84充填的。
除了半导体芯片30、80、81以外，图15所示的半导体器件还包括配置在半导体芯片81上的半导体芯片85(第四半导体芯片)。半导体芯片85通过焊料87连接到半导体芯片81的电极(未示出)。在半导体芯片81和85之间的间隙是用底部填充树脂89充填的。
根据本发明的半导体器件可以包括虚拟芯片。可以在位于绝缘树脂层12的表面S1一侧的最上面的半导体芯片上配置该虚拟芯片。当在绝缘树脂层12的表面S1侧上仅配置了一个半导体芯片时，则该半导体芯片被认为是最上面的半导体芯片。
图16和17分别描述了带有虚拟芯片的图14和15中的半导体器件。前者(图16)包括位于半导体芯片81上的虚拟芯片90。后者(图17)包括位于半导体芯片85上的虚拟芯片91。虚拟芯片91的面积大于配置在表面S1侧的半导体芯片30、81、85中任何一个的面积。
这样配置的虚拟芯片90、91允许在虚拟芯片90、91上以减小的厚度提供密封树脂或者甚至消除密封树脂。这改善了半导体器件的散热效率。尤其是，由于允许较大面积的虚拟芯片91，因此图17的半导体器件获得了显著优越的散热效率。
参考图18，每个焊球40可以部分地埋入抗蚀膜62中。参考图19，可以在绝缘树脂层12的表面S1侧上配置两个或多个互连层。在图19中，阻焊剂64包括通孔插塞301(第三通孔插塞)。该通孔插塞301具有连接到互连18的端部。该通孔插塞301的另一端部连接到互连302(第四互连)上，该互连302配置在阻焊剂64上。在互连302上提供接线柱303。接线柱303可以是铜接线柱。焊料32连接到每个接线柱303。
显而易见，本发明不限于上述实施例，并且在不脱离本发明的保护范围和精神的情况下可以作出修改和变化。

Claims (10)

1.一种制造半导体器件的方法，包括：
在支撑基片上形成种子金属层；
在所述种子金属层上形成包括第一互连的互连层；
在形成所述互连层之后除去所述支撑基片；和
在除去所述支撑基片之后，对所述种子金属层进行图形化以形成第二互连。
2.如权利要求1所述的方法，
其中所述的形成所述互连层的步骤包括：
在所述种子金属层上形成绝缘树脂层；在所述绝缘树脂层中形成通孔插塞；并且在包括所述通孔插塞的所述绝缘树脂层上形成所述第一互连。
3.如权利要求2所述的方法，
其中所述的形成所述第一互连的步骤包括：通过粘性导电薄膜在所述绝缘树脂层上形成所述第一互连。
4.如权利要2所述的方法，
其中所述的形成所述绝缘树脂层的步骤包括：将绝缘树脂涂覆到所述种子金属层然后烘焙所述绝缘树脂。
5.如权利要2所述的方法，
其中所述的形成所述通孔插塞的步骤包括：使用所述种子金属层作为供给层，通过电镀形成所述通孔插塞。
6.如权利要2所述的方法，
其中所述的形成所述绝缘树脂层的步骤包括：使用光敏聚酰亚胺树脂作为所述绝缘树脂；并且
所述的形成所述通孔插塞的步骤包括：通过光刻蚀法形成用于所述通孔插塞的导通孔。
7.如权利要1所述的方法，还包括：
在所述的除去所述支撑基片的步骤之前，在所述互连层上固定多个半导体芯片；和
形成密封树脂，从而所述密封树脂共同地覆盖所述多个半导体芯片。
8.如权利要1所述的方法，
其中所述的对所述种子金属层进行图形化的步骤包括：通过湿蚀刻对所述种子金属层进行图形化。
9.如权利要1所述的方法，还包括：
在所述除去所述支撑基片的步骤之后，使用所述种子金属层作为供给层，通过电镀在所述种子金属层上形成金属膜。
10.如权利要1所述的方法，还包括：
通过化学镀方法在所述第二互连上形成金属膜。
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