CN101288176A - Soi沟槽横型igbt - Google Patents
Soi沟槽横型igbt Download PDFInfo
- Publication number
- CN101288176A CN101288176A CNA2005800518236A CN200580051823A CN101288176A CN 101288176 A CN101288176 A CN 101288176A CN A2005800518236 A CNA2005800518236 A CN A2005800518236A CN 200580051823 A CN200580051823 A CN 200580051823A CN 101288176 A CN101288176 A CN 101288176A
- Authority
- CN
- China
- Prior art keywords
- semiconductor regions
- conductivity type
- groove
- semiconductor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 858
- 239000000758 substrate Substances 0.000 claims description 64
- 230000004888 barrier function Effects 0.000 claims description 52
- 230000000694 effects Effects 0.000 claims description 20
- 230000008030 elimination Effects 0.000 claims description 6
- 238000003379 elimination reaction Methods 0.000 claims description 6
- 230000005684 electric field Effects 0.000 abstract description 9
- 230000036039 immunity Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 159
- 235000012431 wafers Nutrition 0.000 description 79
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000002800 charge carrier Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- -1 boron ion Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005421 electrostatic potential Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/018798 WO2007043170A1 (ja) | 2005-10-12 | 2005-10-12 | Soiトレンチ横型igbt |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101288176A true CN101288176A (zh) | 2008-10-15 |
CN101288176B CN101288176B (zh) | 2010-08-25 |
Family
ID=37942439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800518236A Expired - Fee Related CN101288176B (zh) | 2005-10-12 | 2005-10-12 | Soi沟槽横型igbt |
Country Status (4)
Country | Link |
---|---|
US (1) | US7910962B2 (zh) |
CN (1) | CN101288176B (zh) |
DE (1) | DE112005003720T5 (zh) |
WO (1) | WO2007043170A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102064192A (zh) * | 2010-12-03 | 2011-05-18 | 电子科技大学 | 一种soi横向绝缘栅双极型晶体管器件 |
CN101694850B (zh) * | 2009-10-16 | 2011-09-14 | 电子科技大学 | 一种具有p型浮空层的载流子存储槽栅igbt |
CN102299152A (zh) * | 2010-06-22 | 2011-12-28 | 茂达电子股份有限公司 | 双导通半导体组件及其制作方法 |
CN104282740A (zh) * | 2009-11-09 | 2015-01-14 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的横向p型绝缘栅双极晶体管 |
CN104681433A (zh) * | 2015-01-26 | 2015-06-03 | 电子科技大学 | 一种fs-igbt的制备方法 |
CN108987398A (zh) * | 2018-09-11 | 2018-12-11 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008305998A (ja) * | 2007-06-07 | 2008-12-18 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP5636848B2 (ja) * | 2010-05-26 | 2014-12-10 | 株式会社デンソー | 横型の絶縁ゲート型バイポーラトランジスタ |
JP5246302B2 (ja) * | 2010-09-08 | 2013-07-24 | 株式会社デンソー | 半導体装置 |
CN103066116B (zh) * | 2011-10-24 | 2015-12-02 | 上海华虹宏力半导体制造有限公司 | 双极晶体管器件及制造方法 |
JP5742672B2 (ja) * | 2011-11-02 | 2015-07-01 | 株式会社デンソー | 半導体装置 |
CN102969243B (zh) * | 2012-12-07 | 2015-04-22 | 株洲南车时代电气股份有限公司 | 一种平面栅型igbt芯片制作方法 |
US8809156B1 (en) | 2013-01-25 | 2014-08-19 | International Business Machines Corporation | Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications |
JP2014212252A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社東芝 | 半導体装置 |
CN104518014A (zh) * | 2013-09-27 | 2015-04-15 | 立锜科技股份有限公司 | 绝缘栅双极晶体管及其制造方法 |
US9406793B2 (en) | 2014-07-03 | 2016-08-02 | Broadcom Corporation | Semiconductor device with a vertical channel formed through a plurality of semiconductor layers |
EP3439026B1 (en) * | 2016-03-31 | 2023-03-08 | Tohoku University | Semiconductor device |
CN107527811B (zh) * | 2016-06-21 | 2020-07-10 | 无锡华润上华科技有限公司 | 横向绝缘栅双极型晶体管及其制造方法 |
US10056481B2 (en) * | 2017-01-13 | 2018-08-21 | Globalfoundries Inc. | Semiconductor device structure |
CN112909081B (zh) * | 2021-02-09 | 2022-05-17 | 电子科技大学 | 一种横向功率器件 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02180074A (ja) * | 1988-12-29 | 1990-07-12 | Fujitsu Ltd | オフセット型電界効果トランジスタ及び絶縁ゲート型バイポーラトランジスタ |
DE69528944T2 (de) | 1994-09-16 | 2003-09-04 | Toshiba Kawasaki Kk | Halbleiteranordnung mit hoher Durchbruchspannung und mit einer vergrabenen MOS-Gatestruktur |
JPH0888357A (ja) | 1994-09-16 | 1996-04-02 | Toshiba Corp | 横型igbt |
JPH0897411A (ja) | 1994-09-21 | 1996-04-12 | Fuji Electric Co Ltd | 横型高耐圧トレンチmosfetおよびその製造方法 |
JPH08139319A (ja) | 1994-11-11 | 1996-05-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6194290B1 (en) * | 1998-03-09 | 2001-02-27 | Intersil Corporation | Methods for making semiconductor devices by low temperature direct bonding |
JP2002083877A (ja) | 2000-09-07 | 2002-03-22 | Sanyo Electric Co Ltd | 半導体集積回路装置およびその製造方法 |
JP3963071B2 (ja) | 2000-09-12 | 2007-08-22 | 日産自動車株式会社 | 半導体装置 |
JP4750933B2 (ja) | 2000-09-28 | 2011-08-17 | 株式会社東芝 | 薄型パンチスルー型パワーデバイス |
US7232726B2 (en) * | 2002-05-31 | 2007-06-19 | Nxp, B.V. | Trench-gate semiconductor device and method of manufacturing |
JP4193662B2 (ja) * | 2003-09-30 | 2008-12-10 | 富士電機デバイステクノロジー株式会社 | トレンチ横型伝導度変調半導体装置および半導体装置の製造方法 |
JP4725040B2 (ja) | 2004-06-17 | 2011-07-13 | 富士電機システムズ株式会社 | Soiトレンチ横型igbt |
-
2005
- 2005-10-12 DE DE112005003720T patent/DE112005003720T5/de not_active Withdrawn
- 2005-10-12 CN CN2005800518236A patent/CN101288176B/zh not_active Expired - Fee Related
- 2005-10-12 WO PCT/JP2005/018798 patent/WO2007043170A1/ja active Application Filing
-
2008
- 2008-04-13 US US12/102,000 patent/US7910962B2/en not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101694850B (zh) * | 2009-10-16 | 2011-09-14 | 电子科技大学 | 一种具有p型浮空层的载流子存储槽栅igbt |
CN104282740A (zh) * | 2009-11-09 | 2015-01-14 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的横向p型绝缘栅双极晶体管 |
CN104282740B (zh) * | 2009-11-09 | 2017-03-01 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的横向p型绝缘栅双极晶体管 |
CN102299152A (zh) * | 2010-06-22 | 2011-12-28 | 茂达电子股份有限公司 | 双导通半导体组件及其制作方法 |
CN102299152B (zh) * | 2010-06-22 | 2013-07-17 | 茂达电子股份有限公司 | 双导通半导体组件及其制作方法 |
CN102064192A (zh) * | 2010-12-03 | 2011-05-18 | 电子科技大学 | 一种soi横向绝缘栅双极型晶体管器件 |
CN102064192B (zh) * | 2010-12-03 | 2012-08-29 | 电子科技大学 | 一种soi横向绝缘栅双极型晶体管器件 |
CN104681433A (zh) * | 2015-01-26 | 2015-06-03 | 电子科技大学 | 一种fs-igbt的制备方法 |
CN104681433B (zh) * | 2015-01-26 | 2017-07-11 | 电子科技大学 | 一种fs‑igbt的制备方法 |
CN108987398A (zh) * | 2018-09-11 | 2018-12-11 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
CN108987398B (zh) * | 2018-09-11 | 2023-09-12 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
DE112005003720T5 (de) | 2008-09-11 |
CN101288176B (zh) | 2010-08-25 |
US20090008675A1 (en) | 2009-01-08 |
US7910962B2 (en) | 2011-03-22 |
WO2007043170A9 (ja) | 2007-05-31 |
WO2007043170A1 (ja) | 2007-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101288176B (zh) | Soi沟槽横型igbt | |
EP1168455B1 (en) | Power semiconductor switching element | |
US6576935B2 (en) | Bidirectional semiconductor device and method of manufacturing the same | |
JP6741070B2 (ja) | 半導体装置およびその製造方法 | |
CN103986447B (zh) | 双极半导体开关及其制造方法 | |
CN101632151B (zh) | 可实现三维电荷耦合的高电压半导体功率组件结构 | |
EP1065710B1 (en) | Semiconductor device having a trench gate and method of manufacturing the same | |
TWI358835B (en) | Schottky device and method of forming | |
KR20030064753A (ko) | 반도체 장치 및 반도체 장치의 형성 방법 | |
CN102834919B (zh) | 在BiCMOS工艺技术中的高电压可控硅整流器金属氧化物半导体 | |
TWI229941B (en) | High voltage metal-oxide semiconductor device | |
CN102208439B (zh) | 半导体装置及其制造方法 | |
CN102299078A (zh) | 半导体器件的制造方法 | |
CN113424328A (zh) | 具有非对称沟槽氧化物的碳化硅mosfet结构 | |
CN113611750A (zh) | Soi横向匀场高压功率半导体器件及制造方法和应用 | |
JP2012089824A (ja) | 半導体素子およびその製造方法 | |
WO2022004084A1 (ja) | 半導体装置 | |
JP4725040B2 (ja) | Soiトレンチ横型igbt | |
CN110504313B (zh) | 一种横向沟槽型绝缘栅双极晶体管及其制备方法 | |
CN110459596B (zh) | 一种横向绝缘栅双极晶体管及其制备方法 | |
JP2005183547A (ja) | 半導体装置およびその製造方法 | |
CN110943123A (zh) | 在沟槽中具有控制端场板结构的晶体管装置 | |
CN113838913B (zh) | 分段式注入的自钳位igbt器件及其制作方法 | |
CN104821334A (zh) | N型ldmos器件及工艺方法 | |
JP2009130106A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: FUJI MOTOR STOCK CO., LTD. Effective date: 20100510 Owner name: FUJI MOTOR SYSTEM CO., LTD. Free format text: FORMER OWNER: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD. Effective date: 20100510 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: KANAGAWA PREFECTURE, JAPAN TO: TOKYO, JAPAN |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100510 Address after: Tokyo, Japan Applicant after: Fuji Electric Systems Co.,Ltd. Address before: Tokyo, Japan Applicant before: Fuji Electric Device Technology Co.,Ltd. Effective date of registration: 20100510 Address after: Tokyo, Japan Applicant after: Fuji Electric Device Technology Co.,Ltd. Address before: Kanagawa Applicant before: Fuji Electric Holdings Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FUJI ELECTRIC CO., LTD. Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD. Effective date: 20111009 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111009 Address after: Japan's Kawasaki City Patentee after: FUJI ELECTRIC Co.,Ltd. Address before: Tokyo, Japan Patentee before: Fuji Electric Systems Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100825 Termination date: 20161012 |
|
CF01 | Termination of patent right due to non-payment of annual fee |