CN101273619B - 通过双重转换增益栅极复位的图像像素 - Google Patents
通过双重转换增益栅极复位的图像像素 Download PDFInfo
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- CN101273619B CN101273619B CN2006800358053A CN200680035805A CN101273619B CN 101273619 B CN101273619 B CN 101273619B CN 2006800358053 A CN2006800358053 A CN 2006800358053A CN 200680035805 A CN200680035805 A CN 200680035805A CN 101273619 B CN101273619 B CN 101273619B
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- diffusion region
- conversion gain
- light
- charge
- dual conversion
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (35)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/200,052 US20070035649A1 (en) | 2005-08-10 | 2005-08-10 | Image pixel reset through dual conversion gain gate |
US11/200,052 | 2005-08-10 | ||
PCT/US2006/030668 WO2007021626A2 (en) | 2005-08-10 | 2006-08-08 | Image pixel reset through dual conversion gain gate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101273619A CN101273619A (zh) | 2008-09-24 |
CN101273619B true CN101273619B (zh) | 2012-02-15 |
Family
ID=37696116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800358053A Expired - Fee Related CN101273619B (zh) | 2005-08-10 | 2006-08-08 | 通过双重转换增益栅极复位的图像像素 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070035649A1 (zh) |
EP (1) | EP1925151A2 (zh) |
JP (1) | JP2009505498A (zh) |
KR (1) | KR100940708B1 (zh) |
CN (1) | CN101273619B (zh) |
TW (1) | TW200731788A (zh) |
WO (1) | WO2007021626A2 (zh) |
Families Citing this family (59)
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2005
- 2005-08-10 US US11/200,052 patent/US20070035649A1/en not_active Abandoned
-
2006
- 2006-08-08 WO PCT/US2006/030668 patent/WO2007021626A2/en active Application Filing
- 2006-08-08 KR KR1020087005806A patent/KR100940708B1/ko active IP Right Grant
- 2006-08-08 CN CN2006800358053A patent/CN101273619B/zh not_active Expired - Fee Related
- 2006-08-08 EP EP06800856A patent/EP1925151A2/en not_active Ceased
- 2006-08-08 JP JP2008526098A patent/JP2009505498A/ja active Pending
- 2006-08-10 TW TW095129418A patent/TW200731788A/zh unknown
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Also Published As
Publication number | Publication date |
---|---|
KR100940708B1 (ko) | 2010-02-08 |
WO2007021626A2 (en) | 2007-02-22 |
TW200731788A (en) | 2007-08-16 |
EP1925151A2 (en) | 2008-05-28 |
KR20080038398A (ko) | 2008-05-06 |
CN101273619A (zh) | 2008-09-24 |
WO2007021626A3 (en) | 2007-08-02 |
JP2009505498A (ja) | 2009-02-05 |
US20070035649A1 (en) | 2007-02-15 |
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