CN101257023B - Cmos半导体装置及其制造方法 - Google Patents

Cmos半导体装置及其制造方法 Download PDF

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Publication number
CN101257023B
CN101257023B CN2008100805787A CN200810080578A CN101257023B CN 101257023 B CN101257023 B CN 101257023B CN 2008100805787 A CN2008100805787 A CN 2008100805787A CN 200810080578 A CN200810080578 A CN 200810080578A CN 101257023 B CN101257023 B CN 101257023B
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China
Prior art keywords
metal nitride
nitride layer
zone
semiconductor device
layer
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Expired - Fee Related
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CN2008100805787A
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English (en)
Chinese (zh)
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CN101257023A (zh
Inventor
丁英洙
丁炯硕
许成
白贤锡
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • A—HUMAN NECESSITIES
    • A42—HEADWEAR
    • A42B—HATS; HEAD COVERINGS
    • A42B1/00—Hats; Caps; Hoods
    • A42B1/18—Coverings for protecting hats, caps or hoods against dust, rain, or sunshine
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • A—HUMAN NECESSITIES
    • A42—HEADWEAR
    • A42B—HATS; HEAD COVERINGS
    • A42B1/00—Hats; Caps; Hoods
    • A42B1/004—Decorative arrangements or effects
    • A—HUMAN NECESSITIES
    • A42—HEADWEAR
    • A42B—HATS; HEAD COVERINGS
    • A42B1/00—Hats; Caps; Hoods
    • A42B1/04—Soft caps; Hoods
    • A42B1/06—Caps with flaps; Motoring caps
    • A—HUMAN NECESSITIES
    • A42—HEADWEAR
    • A42B—HATS; HEAD COVERINGS
    • A42B1/00—Hats; Caps; Hoods
    • A42B1/203—Inflatable
    • A—HUMAN NECESSITIES
    • A42—HEADWEAR
    • A42B—HATS; HEAD COVERINGS
    • A42B1/00—Hats; Caps; Hoods
    • A42B1/24—Hats; Caps; Hoods with means for attaching articles thereto, e.g. memorandum tablets or mirrors
    • A—HUMAN NECESSITIES
    • A42—HEADWEAR
    • A42C—MANUFACTURING OR TRIMMING HEAD COVERINGS, e.g. HATS
    • A42C5/00—Fittings or trimmings for hats, e.g. hat-bands
    • A42C5/02—Sweat-bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008100805787A 2007-02-28 2008-02-22 Cmos半导体装置及其制造方法 Expired - Fee Related CN101257023B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2007-0020593 2007-02-28
KR1020070020593A KR100868768B1 (ko) 2007-02-28 2007-02-28 Ｃｍｏｓ 반도체 소자 및 그 제조방법
KR1020070020593 2007-02-28

Publications (2)

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CN101257023A CN101257023A (zh) 2008-09-03
CN101257023B true CN101257023B (zh) 2011-09-14

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US (1) US7919820B2 (ko)
JP (1) JP5931312B2 (ko)
KR (1) KR100868768B1 (ko)
CN (1) CN101257023B (ko)

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US20090263944A1 (en) * 2008-04-17 2009-10-22 Albert Chin Method for making low Vt gate-first light-reflective-layer covered dual metal-gates on high-k CMOSFETs
US7994036B2 (en) 2008-07-01 2011-08-09 Panasonic Corporation Semiconductor device and fabrication method for the same
JP2010073985A (ja) * 2008-09-19 2010-04-02 Toshiba Corp 半導体装置
JP4647682B2 (ja) * 2008-11-12 2011-03-09 パナソニック株式会社 半導体装置及びその製造方法
JP5127694B2 (ja) * 2008-12-26 2013-01-23 パナソニック株式会社 半導体装置及びその製造方法
US7691701B1 (en) * 2009-01-05 2010-04-06 International Business Machines Corporation Method of forming gate stack and structure thereof
JP2011003717A (ja) * 2009-06-18 2011-01-06 Panasonic Corp 半導体装置及びその製造方法
KR20110042614A (ko) 2009-10-19 2011-04-27 삼성전자주식회사 반도체 소자 및 그 형성방법
US8860150B2 (en) * 2009-12-10 2014-10-14 United Microelectronics Corp. Metal gate structure
US8378430B2 (en) * 2010-02-12 2013-02-19 Micron Technology, Inc. Transistors having argon gate implants and methods of forming the same
JP5432798B2 (ja) * 2010-03-30 2014-03-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101213811B1 (ko) * 2010-04-15 2012-12-18 에스케이하이닉스 주식회사 반도체 소자 및 그의 형성 방법
US8343839B2 (en) * 2010-05-27 2013-01-01 International Business Machines Corporation Scaled equivalent oxide thickness for field effect transistor devices
US8466473B2 (en) * 2010-12-06 2013-06-18 International Business Machines Corporation Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs
CN102169900B (zh) * 2011-03-01 2013-03-27 清华大学 基于异质栅极功函数的隧穿场效应晶体管及其形成方法
US9595443B2 (en) 2011-10-20 2017-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate structure of a semiconductor device
US8912610B2 (en) * 2011-11-11 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for MOSFETS with high-K and metal gate structure
JP2013191808A (ja) * 2012-03-15 2013-09-26 Elpida Memory Inc 半導体装置及び半導体装置の製造方法
JP5960491B2 (ja) 2012-04-27 2016-08-02 キヤノンアネルバ株式会社 半導体装置およびその製造方法
KR101977286B1 (ko) 2012-12-27 2019-05-30 에스케이하이닉스 주식회사 듀얼 일함수 게이트스택, 그를 구비한 반도체장치 및 제조 방법
KR101986144B1 (ko) 2012-12-28 2019-06-05 에스케이하이닉스 주식회사 고유전층과 금속게이트를 갖는 반도체장치 및 그 제조 방법
KR102066851B1 (ko) * 2013-02-25 2020-02-11 삼성전자 주식회사 반도체 장치 및 그 제조 방법
KR102190673B1 (ko) 2014-03-12 2020-12-14 삼성전자주식회사 중간갭 일함수 금속 게이트 전극을 갖는 반도체 소자
KR102127644B1 (ko) 2014-06-10 2020-06-30 삼성전자 주식회사 반도체 소자의 제조 방법
US9859392B2 (en) * 2015-09-21 2018-01-02 Samsung Electronics Co., Ltd. Integrated circuit device and method of manufacturing the same
KR102286112B1 (ko) 2015-10-21 2021-08-04 삼성전자주식회사 반도체 장치 및 이의 제조 방법
KR102402761B1 (ko) 2015-10-30 2022-05-26 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US9837487B2 (en) 2015-11-30 2017-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with gate stack
US9768171B2 (en) * 2015-12-16 2017-09-19 International Business Machines Corporation Method to form dual tin layers as pFET work metal stack
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Publication number Publication date
KR100868768B1 (ko) 2008-11-13
JP5931312B2 (ja) 2016-06-08
JP2008219006A (ja) 2008-09-18
KR20080079940A (ko) 2008-09-02
US20080203488A1 (en) 2008-08-28
CN101257023A (zh) 2008-09-03
US7919820B2 (en) 2011-04-05

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