CN101252125A - 具减缩结构的复数晶粒封装结构与其形成方法 - Google Patents

具减缩结构的复数晶粒封装结构与其形成方法 Download PDF

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CN101252125A
CN101252125A CNA2008100808408A CN200810080840A CN101252125A CN 101252125 A CN101252125 A CN 101252125A CN A2008100808408 A CNA2008100808408 A CN A2008100808408A CN 200810080840 A CN200810080840 A CN 200810080840A CN 101252125 A CN101252125 A CN 101252125A
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crystal grain
layer
base material
rerouting
dielectric layer
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杨文焜
许献文
吴雅慈
黄清舜
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Yupei Science & Technology Co Ltd
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Yupei Science & Technology Co Ltd
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Abstract

本发明提供一种具减缩结构的复数晶粒封装结构与其形成方法，所述的封装结构包含一包含于基材上表面预形成一晶粒收纳孔洞的基材。一晶粒以黏胶设置于晶粒收纳孔洞内，且一弹性介电层填充于晶粒与基材间间隙，以吸收热机械应力；因此封装厚度，与结构热膨胀系数失配可缩减。本发明更提供一系统级封装结构，具有较高可靠性与较低制造成本。形成复数晶粒封装的制造工艺与传统制造工艺相比较，较为简单与简易。因此，本发明揭露一扇出晶圆级封装，具有较小厚度与较佳热膨胀系数失配表现。

Description

具减缩结构的复数晶粒封装结构与其形成方法
技术领域
本发明为关于系统级封装结构(SIP)，更特定言之，为关于系统级封装的板级封装(PSP)，具体来说是关于一种具减缩结构的复数晶粒封装结构与其形成方法。
背景技术
于半导体装置领域，装置尺寸变小但元件密度却增加。传统封装技术，例如铅导线架封装，软质封装，硬质封装技术无法满足制造小尺寸但包含高单元密度的晶粒；因此，对适用于高密度单元的新封装联机技术即有需求。
因上述理由，封装技术朝向球栅阵列封装(BGA)，覆晶(FC-BGA)，晶粒级封装(CSP)，晶圆级封装(WLP)发展；其中，晶圆级封装为先进封装技术，晶粒的封装与测试为于晶圆切割前进行。此外，晶圆级封装为先进制造工艺，因此打线接合、晶粒设置(die mount)、上胶(under-fill)均可省略。使用晶圆级封装，成本与制造时间均可减省，晶圆级封装结构终尺寸也与晶粒几乎相同；因此，该技术可使电子装置尺寸小型化。
虽然使用晶圆级封装可以降低晶粒与互连基材间热膨胀系数失配(例如增层与重布层间热膨胀系数失配)，硅晶粒(2.3)与砂心黏糊(core paste)(20-180)间热膨胀系数差异仍大，足以使因此产生的机械应力，于温度循环测试时，产生可靠度问题。此外，切割道存在的不同成份材质，例如，砂心黏糊，玻璃与环氧树脂，也会使切割程序趋于复杂。
另一传统晶圆级封装制造工艺问题为必须对形成于晶粒上的增层上的堆栈重布层最佳化(refined)；因此，封装厚度必须降低以符合缩减封装结构的需求。
因此，本发明提供一关于扇出晶圆级封装(板级晶圆)的复数晶粒封装具有低堆栈高度与低热膨胀系数失配。
发明内容
本发明的一优点为提供一结构用于系统级封装，该结构具高可靠性与低制造成本。
本发明的一优点为提供一制造工艺，与传统方法比较，于形成复数晶粒封装时较简单与简易。
本发明的另一优点为提供一复数晶粒封装结构与形成方法，用以避免制造工艺中晶粒移位问题。
本发明另一优点为提供一复数晶粒封装结构与形成方法，于制造工艺中不需使用射出成型工具。
另一本发明优点为提供复数-晶粒封装结构与形成方法避免制造工艺中产生挠曲。
另一本发明优点为基材具有预形成孔洞，与晶粒为收纳于基材预形成孔洞内的特征，以使封装厚度降低。此外，基材与晶粒收纳孔洞为于封装前预形成；因此，良率上升。
本发明结构为形成一结构不需要填充砂心黏糊(core paste)；预形成孔洞以弹性介电材质填充，以吸收硅晶粒与基材(有机材质，较佳为FR5/双马来酰亚胺三嗪(Bismaleimide triazine，BT))间因热膨胀系数差异，所产生的热机械应力。
制造工艺的另一特征为：只有介电层涂于(较佳为硅氧聚合物)晶粒有效电路面(active surface)与基材(较佳为FR5或双马来酰亚胺三嗪)表面。介电层(硅氧烷聚合物)为光敏感层；因此可以光罩形成位于其上的开口。真空制造工艺用于消减于真空制造工艺涂布硅氧烷聚合物时的气泡。晶粒黏着材质为于基材黏于晶粒前，涂于晶粒背面。
本发明揭露一具较佳可靠性结构，因为基材与印刷电露板主机板热膨胀系数相同，因此无热机械应力施加于锡铅凸块/球；因此，于进行板级温度循环试验时，该结构有较佳可靠性。
本发明揭露一复数晶粒封装结构，至少包含一基材，该基材包含一于基材内预形成的晶粒收纳孔洞与预形成于基材上表面的金属焊垫；其中第一晶粒以黏胶设置于晶粒收纳孔洞内。一介电层形成第一晶粒与基材上，并填充晶粒与基材间间隙以吸收之间的热机械应力。一增层形成于介电层上；其中增层至少包含一重布层与一弹性介电层。数开口形成于增层上表面使至少一重布层曝露。传导金属形成于开口上，与并藉重布层与第一晶粒形成电性连接，及藉设置于传导金属上的金属焊垫与第二晶粒形成电性连接；其中第一晶粒与第二晶粒经由传导金属保持电性连接。
本发明提供一形成半导体封装方法，至少包含：提供一包含于基材上表面预形成晶粒收纳孔洞与金属焊垫的基材。将第一晶粒于晶粒重分布工具上，以所需间距，使用捡取与放置精确对准系统重布；之后，一黏性材质敷于载体工具周界区域以黏着该基材。贴附一黏性材质于该晶粒背面后，黏贴该晶粒于基材孔洞内；之后，进行真空烘烤制造工艺以确保该晶粒贴附于该基材。结束上述制造工艺后，自基材分离该晶粒重分布工具。之后，涂布一弹性介电层于该晶粒与该基材上，与填充一弹性介电层于该晶粒与该孔洞间间隙；进行真空制造工艺，避免气泡产生。用以于晶粒与基材表面形成增层的方法包含：于该弹性介电层形成至少一重布层。于该增层的上表面形成复数开口，以使至少一重布层曝露。于开口上形成传导金属(凸块底金属层)后，设置一包含金属焊垫的第二晶粒于该传导金属。
附图说明
图1显示一根据本发明的扇出系统级结构的剖面图。
图2显示一根据本发明的扇出系统级结构的剖面图。
图3显示一根据本发明的贴附于印刷电露板或主机板的封装组合剖面图。
图4显示一根据本发明的基材与载体工具组合的剖面图。
图5显示一根据本发明的基材与载体工具组合的上视图。
附图标号：
基材1              铝垫3
第二焊垫3a         第一晶粒5
黏胶7              孔洞9
第一重布层11       介电层A 13
砂心黏糊15         介电层17
传导金属19         焊垫21
第二重布层23       第二晶粒25
介电材料27         第一重布层29
导体金属30         传导金属31
贯通开口32         介电层B 33
金属焊垫35         第一晶粒221
第二晶粒223        基板229
孔洞225、227
黏胶231、233
线路235            传导凸块237
第三晶粒241        第四晶粒243
封装300            基材302
晶粒304            弹性材质306
介电层308          重布层金属314
凸块底金属层332    焊垫338
主机板340          主机板342
基材401            孔洞402
玻璃载体工具403    黏性材质404
基材501            孔洞502
周边区域503
具体实施方式
本发明将配合其较佳实施例与随附的图示详述于下，应理解者为本发明中所有的较佳实施例仅为例示之用，因此除文中的较佳实施例外，本发明亦可广泛地应用在其它实施例中。且本发明并不受限于任何实施例，应以随附的权利要求范围及其同等领域而定。
本发明揭露一扇出晶圆级封装结构，包含一基材，其中该基材包含一预形成孔洞基材与形成于上的金属焊垫。图1表示一本发明的实施例中，用于系统级封装(SIP)的板级封装(PSP)结构截面图。如图1显示系统级封装结构包含一基材1，基材1包含一晶粒收纳孔洞9形成于内，可至少用于收纳包含铝垫3(金属焊垫)形成于上的第一晶粒5。孔洞9的长宽较佳为约比第一晶粒5长宽多100纳米(μm)，孔洞9深度则比第一晶粒5略高约25-50纳米。上述基材1可为直径为200，300公厘或更大圆形例如晶圆型状，或矩形例如板状或框状。如图1显示，第一晶粒5放置于孔洞9内并以黏胶7(具弹性可黏着晶粒材质)固定。敷一第一介电层A(DLA)13覆盖第一晶粒5与基材1上表面，并填满第一晶粒1与孔洞9侧壁间空间。
数开口形成于介电层A 13上用以容纳基材1上金属焊垫35；其中开口为利用光蚀刻制造工艺或曝露显影制造工艺形成。金属焊垫35与第一重布层(RDL)29连接，并与铝垫3保持电性连接。
之后一介电层B(DLB)33形成于上，覆盖第一重布层11与介电层13；其中数开口形成于介电层B33上以使部份第一重布层11曝露，以放置传导金属31。
总结来说，因为第一晶粒5形成于一孔洞9内，整个系统级封装高度即可缩减。此外，第一重布层规划为扇出；因此锡球间距即增加，因此可靠性与散热条件可以改善。
一介电层29形成(以涂布方式)于第二晶粒25表面下，并且第二焊垫3a形成于上。一第二重布层23形成于介电层29下，且与第二焊垫3a连接。一包含数贯通开口的介电材料27形成(涂布)于第二重布层23上；其中这些贯通开口用以收纳传导金属31；因此传导金属31可以与第二重布层23保持电性接触。
如图1所表示，一第二晶粒25以覆晶方式叠于第一晶粒5上，并藉传导金属31、第一重布层11，第二重布层23，铝垫3与第二焊垫3a保持电性接触；其中两晶粒的焊垫为以相对方位设置。
砂心黏糊15敷于第二晶粒25周围并填充第二晶粒25与其它元件间空间，例如，传导金属31；其中砂心黏糊15材质可为环氧树脂、橡胶、树脂、塑料、陶瓷等。如图1显示，数贯通开口32与孔洞形成于砂心黏糊15上，用以形成第三重布层，其中贯通开口32为供第一晶粒5与第二晶粒25与外界保持电性连接。例如形成于贯通开口32内焊垫21与传导金属19用以供第一晶粒5与第二晶粒25与外界保持电性连接。一介电层17(可显影型(phototype))形成于砂心黏糊15上；其中数开口形成于焊垫21上；于另一具体实施例，导体金属30形成于焊垫21上(作为凸块底金属层结构)。
于叙述关于本发明的结构特征后，以下为关于本发明具体实施例揭露的材质。预形成基材1较佳为有机基材，容易用于形成晶粒收纳孔洞与设置一金属焊垫于表面。其中基材1至少包含两层状层，例如，铜箔层板(copper-clad laminate CCL)：一包含形成于内的晶粒收纳孔，另一为设置于基材1底部。较佳的基材1材质其性质为：玻璃转化温度(Tg)＞170℃与热膨胀系数于X方向或Y方向为约16，与于Z方向为约60，例如，FR5or双马来酰亚胺三嗪。
本发明的具体实施例，介电层13较佳为一弹性介电材料，该材料为以含硅介电材质为基底材质制备，至少包含硅氧烷聚合物(siloxane polymers，SINR)，道康宁(Dow Coming)WL5000系列，与上述材质组合。为缓解热与机械应力，于另一具体实施例，介电层为由至少包含聚酰亚胺(PI)或硅树脂的材质制成；较佳为介电层为一光敏感层，用于简单制造工艺。于本发明另一具体实施例，弹性介电层13为热膨胀系数高于100(ppm/℃)的材质，伸长率约百分之四十(较佳为百分之三十至五十)，材质硬度介于塑料与树脂。弹性介电层13厚度与进行温度循环试验时，重布层/介电层接口上所累积应力大小相关。
于另一具体实施例，重布层材质至少包含钛/铜/金合金或钛/铜/镍/金合金，重布层厚度为介于2纳米与15纳米。钛/铜合金为由溅镀技术形成，铜/金或铜/镍/金合金为由电镀形成；其中使用电镀制造工艺形成重布层，可以使重布层厚度足以承受温度循环测试时，晶粒与基材间的热膨胀系数失配。于另一具体实施例，钛/铜合金可作为种金属(seed metal)层。金属焊垫3，3a可为铝或铜或其组合。于另一具体实施例，扇出-晶圆级封装结构(FO-WLP)使用硅氧烷聚合物作为弹性介电层，与铜作为重布层金属以降低累积于重布层/介电层接口间应力。
图2显示一邻接式与堆栈式封装结构。第一晶粒221与第二晶粒223(图2中位置较低者)为设置于具所需尺寸，位于基板基材229上的晶粒收纳孔洞225、227内并以黏胶(可黏晶粒)材质231与233分别固定，于另一具体实施例，晶粒收纳孔洞225与227具不同尺寸。第二晶粒223设置于第一晶粒221附近，且经由垂直通讯线路235使两晶粒互相通讯。第三晶粒241与第四晶粒243(图2中位置较高的晶粒)为覆晶凸块结构，包含一第二重布层与金属焊垫，附于第一晶粒221与第二晶粒223表面。上述复数晶粒经由金属凸块、重布层与贯通孔洞与终端传导凸块(金属)237保持电性连接。图标为显示包含传导凸块237的球栅阵列封装；若省略传导凸块，所显示者为栅格阵列封装型系统级封装或栅格阵列封装-系统级封装。
图3显示一封装300藉焊点(soldering join)附于印刷电路板或主机板340所形成组合的剖面图，用以解释板级温度循环试验中，本发明揭露结构的可靠度提升。硅晶粒304(热膨胀系数为2.3)封装于封装结构内；其中FR5或双马来酰亚胺三嗪有机环氧材质(热膨胀系数约16)，具有与主机板340或印刷电路板相同热膨胀系数，作为基材302。晶粒304与基材302间间隙为以弹性材质306填充，以吸收因为晶粒与基材(FR5/双马来酰亚胺三嗪)间热膨胀系数失配造成的热与机械应力。介电层308也为弹性材质，因此晶粒焊垫338与印刷电路板340间应力亦可被吸收。
重布层金属314为由铜/金材质构成(热膨胀系数约16)且重布层金属314热膨胀系数与主机板340与有机基材302相同。传导凸块338的凸块底金属层(UBM)332设置于基材302的终端导体金属焊垫上。主机板342上金属岛状结构(metal land)由铜构成(热膨胀系数约16)且主机板342上金属岛状结构的热膨胀系数与主机板340相同。因此，基于以上叙述，本发明揭露一具有较佳可靠性结构，于板上X/Y方向无热应力，Z方向应力为弹性介电材料吸收，且切割时只涉及一材质(环氧树脂型)。
根据本发明，本发明更提供一方法用以形成半导体装置封装。步骤如下：
如图4显示，为一包含晶粒收纳孔洞402的基材401。应注意，并没有晶粒孔洞形成于基材401侧边，因为基材401侧边为用于晶圆级封装制造工艺中，使基材401黏于玻璃载体。因此，如图4所显示，一黏性材质404(较佳为紫外光烘烤型)敷于玻璃载体工具403侧边(尺寸与基材401同)用以使基材401黏于玻璃载体工具403，其中载体工具材质为玻璃，硅，陶瓷，合金42或印刷电路板，较佳为，黏性材质404与用于晶粒重分布工具，于制造工艺中降低晶粒移动的基材与载体工具所使用材质相同。最后，当完成接合与紫外光烘烤后，玻璃载体工具403与基材401为以如图4方式组合。
图5显示基材501上视图，如图显示，没有晶粒孔洞502形成于基材边缘501与周边区域503，因为此区域为于晶圆级封装制造工艺中，用以黏附与支撑基材501于玻璃载体上。于晶圆级封装制造工艺结束后，沿玻璃载体上虚线标记，于以虚线限定的内区域进行切割程序，以完成封装切割。
下述段落，为描述本发明揭露结构的制造工艺；包含提供一晶粒重分布工具，该工具包含对准图案与形成于上的图案化黏胶。
第一，预形成一包含晶粒收纳孔洞与形成于基材表面的金属焊垫的基材；较佳为，基材材质具有较高玻璃转化温度(Tg)，例如FR5/双马来酰亚胺三嗪，且孔洞深度为比晶粒厚度高20um至50um以包纳晶粒黏附材质。于另一具体实施例，基材可包含不同尺寸孔洞，以收纳不同尺寸晶粒。
晶粒重分布工具(板)包含形成于上的对准图案，与印刷于工具上的图案黏胶，用以黏住晶粒表面；之后使用设计用于覆晶的捡取与放置对准系统，将第一晶粒以所需间距重布于工具上。之后，晶粒贴附材质印刷于晶粒背面。于另一具体实施例，真空黏板机用于使晶粒背面黏于基材。烘烤晶粒贴附材质以确定晶粒贴附基材上，与之后使工具与板晶圆构造分离(板晶圆构造为指晶粒贴附基材孔洞)。
其它选择包含，使用可精确定位的黏晶机，且一晶粒贴附材质分布于孔洞表面以固定晶粒，或使用背面已包含贴附带的晶粒。晶粒放置于基材孔洞上，与之后对晶粒贴附材质施以热烘烤，使晶粒确定贴附于基材上。
当晶粒重分布于基材上，之后开始第一增层制造工艺。一清洁制造工艺，包含湿与/或干清洁制造工艺，用于清洁表面；之后涂布一介电材质于板表面。于后续制造工艺，进行真空制造工艺以确定板内不存在气泡。之后，光蚀刻制造工艺用以形成金属孔洞的开口，金属(铝)接合焊垫与/或切割道。之后，等离子清洁步骤用以清洁开口表面(供导体金属焊垫使用)与金属(铝)接合焊垫。之后，钛/铜以溅镀形成种金属层，之后涂布光刻胶于介电层与种金属层上以形成图案化重分布金属层(RDL)。
电镀制造工艺用以形成铜/金或铜/镍/金层，以作为重布层金属；之后剥除光刻胶与进行湿蚀刻以形成重布层金属导线。于涂布或印刷顶部介电层后，形成开口，以用以容纳锡铅凸块的导体金属焊垫与/或以光罩制造工艺形成切割道，以完成第一层板制造工艺。
下述制造工艺用以于上晶粒形成第二增层，包含使用晶圆级封装制造工艺形成包含锡铅凸块的第二增层结构，与将处理过晶圆切割为单个覆晶晶粒。上晶粒以覆晶方式贴附于第一增层，之后对焊点进行红外线-回焊以固定晶粒于板上。以真空印刷方式印刷砂心黏糊于介电层与上晶粒，以避免产生气泡。之后进行光罩制造工艺或激光钻孔以形成供容纳导体的贯通孔洞与容纳晶粒铝垫用的开口；之后以等离子清洁贯通孔洞。
之后，溅镀钛/铜作为种金属层，与之后于介电层与种金属层涂布光刻胶以形成图案化重分布金属层(RDL)。后续步骤依序包含涂布或印刷顶部介电层，形成切割道的开口，以光罩制造工艺或激光钻孔制造工艺形成球金属焊垫开口。之后制造工艺可重复上述制造工艺，例如进行溅射钛/铜步骤以形成种金属层，涂布光刻胶形成图案化重布层，以电镀制造工艺形成铜/金图案化重布层，剥除光刻胶与湿蚀刻种金属层，以形成第二重布层金属导线，与如有需要，形成凸块底金属层结构。
于完成球设置或锡铅黏胶印刷，进行热回焊制造工艺以于基材端上进行回焊(于球栅阵列封装)。执行测试。板晶圆级终测试为使用垂直探针卡。测试后，基材以切割方式将封装切分为单一元件。之后将经切割封装，以捡取与放置方式，将该经切割封装置放于托盘或卷带包装(tape and reel)内。
对熟悉此领域技术者，本发明虽以较佳实例阐明如上，然其并非用以限定本发明的精神。在不脱离本发明的精神与范围内所作的修改与类似的配置，均应包含在权利要求范围内，此范围应覆盖所有类似修改与类似结构，且应做最宽广的诠释。

Claims (10)

1.一种具减缩结构的复数晶粒封装结构，其特征在于，所述的复数晶粒封装结构至少包含：
一基材，包含一预形成于所述的基材内晶粒收纳孔洞；
一第一晶粒以黏胶设置于所述的晶粒收纳孔洞内；
一第一介电层形成所述的第一晶粒与所述的基材上，并填充所述的晶粒与所述的基材间间隙，以吸收之间的热机械应力；
一增层形成所述的第一介电层上，其中所述的增层至少包含一第一重布层、一介电层，数开口形成于增层上表面，以使至少一所述的重布层曝露；
数传导金属形成于所述的开口上，并藉所述的重布层与所述的第一晶粒形成电性连接；
一第二晶粒，包含第二重布层与金属焊垫，以覆晶结构设置于所述的数传导金属上，并为一包含数贯通孔洞的砂心黏糊围绕，其中所述的第一晶粒与所述的第二晶粒经所述的传导金属保持电性传导；
一导体金属，填充所述的贯通孔洞以与所述的第一晶粒与所述的第二晶粒保持电性连接。
2.如权利要求1所述的具减缩结构的复数晶粒封装结构，其特征在于，所述的复数晶粒封装结构更包含一增层形成于所述的砂心黏糊上，其中所述的增层至少包含一第三重布层、一介电层与复数开口，形成于所述的增层上表面，以使至少一所述的重布层曝露。
3.如权利要求1所述的具减缩结构的复数晶粒封装结构，其特征在于，其中所述的第一介电层材质为弹性材质。
4.如权利要求3所述的具减缩结构的复数晶粒封装结构，其特征在于，其中所述的第一介电层至少包含一以含硅介电材料为基底的材质、苯并环丁烷或聚酰亚胺，其中所述的含硅介电材质为基底材质包含硅氧烷聚合物、道康宁WL5000系列、或上述组合。
5.如权利要求1所述的具减缩结构的复数晶粒封装结构，其特征在于，所述的基材材质包含环氧树脂型的FR5、FR4、双马来酰亚胺三嗪、苯并环丁烷、合金，玻璃、硅、陶瓷或金属。
6.如权利要求1所述的具减缩结构的复数晶粒封装结构，其特征在于，所述的介电层至少包含一光敏感层。
7.如权利要求1所述的具减缩结构的复数晶粒封装结构，其特征在于，所述的重布层由合金构成，至少包含钛/铜/金合金或钛/铜/镍/金合金。
8.如权利要求1所述的具减缩结构的复数晶粒封装结构，其特征在于，其中所述的第一重布层由所述的第一晶粒扇出。
9.如权利要求1所述的具减缩结构的复数晶粒封装结构，其特征在于，所述的重布层的热膨胀系数与所述的基材相同。
10.一形成具减缩结构的复数晶粒封装结构的方法，其特征在于，所述的方法至少包含：
提供一基材，其中于所述的基材上表面包含预形成晶粒收纳孔洞与金属焊垫；
于晶粒重分布工具上，将第一晶粒，以所需间距，使用捡取与放置精确对准系统重分布，与使一黏性材质敷于载体工具周界区域以黏着所述的基材；
贴附一黏性材质于所述的晶粒背面；
黏贴所述的晶粒于所述的基材孔洞，之后，进行真空烘烤制造工艺以确保所述的晶粒贴附于所述的基材；
自所述的基材分离所述的晶粒重分布工具；
于所述的弹性介电层形成至少一重布层之后，凸块底金属层，与涂布一第一介电层于所述的晶粒与所述的基材上，与填充所述的介电层于所述的晶粒与所述的孔洞间间隙；
进行真空制造工艺，以避免气泡产生；
形成一增层，其中所述的增层至少包含一第一重布层与一第二介电层；
于所述的增层的上表面形成复数开口以使至少一重布层曝露；
于所述的开口上形成传导金属；
设置一包含第二重布层与金属焊垫的第二晶粒于所述的传导金属；
形成一砂心黏糊围绕所述的第二晶粒，其中数个所述的贯通孔洞形成于所述的砂心黏糊内，以曝露所述的重布层与以传导金属填充所述的贯通孔洞；
于所述的砂心黏糊上形成一第三重布层与传导焊垫；
于所述的砂心黏糊上形成包含开口的保护层，以曝露所述的传导焊垫与所述的传导金属。
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