CN1012494B - 硅酯和金属氧化物的多层陶瓷涂层 - Google Patents
硅酯和金属氧化物的多层陶瓷涂层Info
- Publication number
- CN1012494B CN1012494B CN87107417A CN87107417A CN1012494B CN 1012494 B CN1012494 B CN 1012494B CN 87107417 A CN87107417 A CN 87107417A CN 87107417 A CN87107417 A CN 87107417A CN 1012494 B CN1012494 B CN 1012494B
- Authority
- CN
- China
- Prior art keywords
- coating
- pottery
- silicon
- coated
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005524 ceramic coating Methods 0.000 title claims abstract description 49
- 238000000576 coating method Methods 0.000 claims abstract description 291
- 239000011248 coating agent Substances 0.000 claims abstract description 289
- 239000000203 mixture Substances 0.000 claims abstract description 109
- -1 silicate ester Chemical class 0.000 claims abstract description 74
- 239000002904 solvent Substances 0.000 claims abstract description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000012702 metal oxide precursor Substances 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 28
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 28
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 21
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000919 ceramic Substances 0.000 claims description 169
- 229910052710 silicon Inorganic materials 0.000 claims description 148
- 239000010703 silicon Substances 0.000 claims description 148
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 133
- 238000000034 method Methods 0.000 claims description 110
- 229910052736 halogen Inorganic materials 0.000 claims description 106
- 150000002367 halogens Chemical class 0.000 claims description 102
- 229920000642 polymer Polymers 0.000 claims description 70
- 239000000243 solution Substances 0.000 claims description 70
- NTQGILPNLZZOJH-UHFFFAOYSA-N disilicon Chemical compound [Si]#[Si] NTQGILPNLZZOJH-UHFFFAOYSA-N 0.000 claims description 62
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 61
- 230000007062 hydrolysis Effects 0.000 claims description 58
- 238000006460 hydrolysis reaction Methods 0.000 claims description 58
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 57
- 229910000077 silane Inorganic materials 0.000 claims description 57
- 229910052799 carbon Inorganic materials 0.000 claims description 49
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 48
- 150000001343 alkyl silanes Chemical class 0.000 claims description 46
- 239000000126 substance Substances 0.000 claims description 45
- 238000005229 chemical vapour deposition Methods 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 29
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 29
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 27
- 229910021529 ammonia Inorganic materials 0.000 claims description 26
- 150000001721 carbon Chemical group 0.000 claims description 25
- 238000001035 drying Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 229960001866 silicon dioxide Drugs 0.000 claims description 20
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 19
- 239000002210 silicon-based material Substances 0.000 claims description 16
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 claims description 14
- 239000012808 vapor phase Substances 0.000 claims description 12
- 238000010790 dilution Methods 0.000 claims description 8
- 239000012895 dilution Substances 0.000 claims description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 15
- 239000010936 titanium Substances 0.000 abstract description 11
- 229910052719 titanium Inorganic materials 0.000 abstract description 8
- 238000007865 diluting Methods 0.000 abstract description 2
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 abstract 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 36
- 229910004298 SiO 2 Inorganic materials 0.000 description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 239000004411 aluminium Substances 0.000 description 14
- 238000009413 insulation Methods 0.000 description 14
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 12
- 229920001577 copolymer Polymers 0.000 description 12
- 150000004703 alkoxides Chemical class 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 229910010413 TiO 2 Inorganic materials 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000197 pyrolysis Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 229920001709 polysilazane Polymers 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010931 ester hydrolysis Methods 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000011253 protective coating Substances 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 230000026030 halogenation Effects 0.000 description 3
- 238000005658 halogenation reaction Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UTYVAVYXOXPGNX-UHFFFAOYSA-N 3-acetyl-2,4-dioxopentanoic acid Chemical compound CC(=O)C(C(C)=O)C(=O)C(O)=O UTYVAVYXOXPGNX-UHFFFAOYSA-N 0.000 description 2
- FIXLZGDDOXHLPN-UHFFFAOYSA-N 3-acetyl-3-butoxypentane-2,4-dione Chemical compound C(CCC)OC(C(C)=O)(C(C)=O)C(C)=O FIXLZGDDOXHLPN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 2
- UNRQTHVKJQUDDF-UHFFFAOYSA-N acetylpyruvic acid Chemical compound CC(=O)CC(=O)C(O)=O UNRQTHVKJQUDDF-UHFFFAOYSA-N 0.000 description 2
- FANANXQSVYPRCQ-UHFFFAOYSA-N azane;silicon Chemical compound N.[Si] FANANXQSVYPRCQ-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HZBAVWLZSLOCFR-UHFFFAOYSA-N oxosilane Chemical compound [SiH2]=O HZBAVWLZSLOCFR-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 230000005328 spin glass Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- 241000370738 Chlorion Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- IPKPVOHZKJXMOV-UHFFFAOYSA-N [Ti].C(CCC)OC(C(=O)C(C(C(=O)O)=O)C(C)=O)OCCCC Chemical compound [Ti].C(CCC)OC(C(=O)C(C(C(=O)O)=O)C(C)=O)OCCCC IPKPVOHZKJXMOV-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000005915 ammonolysis reaction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910000062 azane Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 108010025899 gelatin film Proteins 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 1
- 239000006166 lysate Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000001367 organochlorosilanes Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- VPOSEHGPNQAKDO-UHFFFAOYSA-N pentane zirconium Chemical compound CCCCC.[Zr] VPOSEHGPNQAKDO-UHFFFAOYSA-N 0.000 description 1
- AHBPBADERZDJKT-UHFFFAOYSA-N pentane-2,3-dione zirconium Chemical compound [Zr].C(C)C(=O)C(=O)C AHBPBADERZDJKT-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02153—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing titanium, e.g. TiSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02159—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing zirconium, e.g. ZrSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Chemically Coating (AREA)
- Chemical Vapour Deposition (AREA)
- Paints Or Removers (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明关于一种材料,它由在溶剂中稀释一种部分水解的硅酸酯和金属氧化物前体而产生的,金属氧化物前体从烷氧基铝、烷氧基钛和烷氧基锆组成的这一组中选出。预陶瓷混合溶液加到基板上并加热使其陶瓷化。在陶瓷化的SiO2金属氧化物涂层上能再加一层或多层含硅碳、硅氮或硅碳氧的陶瓷涂层。CVD或预CVD顶部涂层可用作进一步保护。本发明特别适用于涂覆电子器件。
Description
在多种环境条件下都能工作的电子器件必须能经受各种应力下的湿度、热度以及耐磨性。据报导,在制备旨在提高电子器件的可靠性的涂层方面已做了大量的工作。然而在现在的常规涂层(包括瓷和金属包覆)中,没有一个在保护电子器件不受所有应力影响方面能做得很好。
电子器件失灵的一个普遍原因是半导体电路片的钝化表面上有微裂纹或空隙,从而引进了杂质。这样就有必要发明一种方法来阻止电子器件上的无机涂层形成微裂纹,空隙或针眼。
电子器件上的钝化涂层能提供绝缘,防止离子式的杂质,如氯离子(Cl-)和钠离子(Na+),进入到电子器件里去干扰电子信号的传送。钝化涂层
也可施加到电子器件上去以防湿度和挥发性有机化合物的影响。
在电子工业中曾对非晶形硅(下面简称a-Si)膜的各种不同应用做过许多研究。但是,对用a-Si膜来防止电子器件的环境或密封影响却无人知道。有关形成a-Si膜的问题,以前曾公布过不少可能的加工方法。例如,为了形成非晶形硅膜,曾使用过下述沉积加工法:化学蒸汽沉积(CVD)法,等离子增强CVD法,反应喷涂法,离子镀敷和光-CVD法,等等。一般说来,等离子增强CVD加工法已工业化了,并广泛用来沉积a-Si膜。
熟悉本专业的人都知道使用基板平面化来作为一种电子器件体内和金属化层之间的一个夹层。在Gupta和Chin所著的、1986年由美国化学学会出版的名为《微电子加工方法》第22章“自旋玻璃膜作为一种平面化的电解质的特性”第349-65页中指出了多级位互连系统,这些系统带有用加固或非加固的SiO2玻璃膜这样一些常规中间级位电解质绝缘体层而形成的金属化级位绝缘。但是,CVD电解质膜最多只能提供基板特性的保形覆盖,对于用一涂复金属化层来实现连续的,均匀的分步覆盖来说,它是不利的。不好的分步覆盖会在导体里产生不连续的、薄薄的斑点,从而引起金属化层的剥蚀和电子器件的可靠性问题。自旋玻璃膜一直被用来作为金属化层之间的夹层绝缘,其中顶层是后来用平板印刷技术而成型。然而,人们尚不知道与平面化中间夹层绝缘相反的电子器件表面顶涂层的平面化。
根据先前技术,一种单一材料往往不能满足注意涂层、例如电子工业中的应用要求。诸如象微硬度,抗潮湿,离子绝缘,粘附性,韧性,抗张强度,热膨胀系数等等好多种涂层特性都需要由不同涂层的相继涂层来提供。
硅和含氮预陶瓷聚合物(如硅氮烷)已在许多专利文献中公开,这包括1983年9月13日Gual的美国专利第4,404,153号。在这项专利中,公开了一种制备R’3Si NH-硅氮烷聚合物的加工方法,它是用含氮乙硅烷与(R’3Si)2NH相接触并起反应而成,这里R’指乙烯基,氢,含有一至三个碳原子的烷基或苯基。Gaul在其中还指出用预陶瓷硅氮烷聚合物来产生含氮硅碳陶瓷材料。
Gaul 1982年1月26日的美国专利第4,312,970中,用预陶瓷硅氮烷聚合物热解获得了陶瓷材料,那些聚合物是用有机氯硅烷和乙硅氮烷的反应制备而成。
Gaul 1982年7月20日的美国专利第4,340,619号中,用预陶瓷硅氮烷聚合物的热解获得了陶瓷材料,而那些聚合物是用含氮乙硅烷和乙硅氮烷反应制备而成。
Gannady 1985年9月10日的美国专利第4,540,803号中,用预陶瓷硅氮烷聚合物的热解而获得了陶瓷材料,而那些聚合物是用三氯硅烷和乙硅氮烷反应制备而成。
Dietz等人1975年1月7日的美国专利第3,859,126号中,用各种可供选择的包括SiO2在内的多种氧化物来形成一种含有PbO,B2O3和ZnO的化合物。
Rust等人1963年10月30日美国专利第3,061,587号中,介绍了用二烃基二酰基含氧硅烷或者二烃基二烷氧硅烷和三烃基甲硅烷氧基二烷氧铝反应形成有序的有机硅铝氧化物共聚物的加工方法。
Glasser等人(1984年在《非结晶固体》P209-221杂志上刊登的一篇名为“关于制备和氮化硅石Sol/Gel膜的H2O/TEOS比的影响”)不用附加的金属氧化物而采用四乙氧硅烷来生产以后高温氮化膜。
本发明涉及在电子器件表面上采用低温形成多层薄陶瓷或类似陶瓷的涂层来加强对电子器件的保护。已经发明的一种方法是用硅酸酯和一种或多种金属氧化物形成涂层,然后用一或多个硅,或者硅和氮,或者硅和碳及含氮的陶瓷或类似陶瓷的涂层涂敷上。
本发明涉及保护电子器件的单层或多层保护涂层的低温成形。本发明的单层包括一涂层,它是用水解或部分水解的硅酸酯与烷氧基锆、烷氧基铝和/或烷氧基钛接触而产生的一个均匀的预陶瓷聚合物材料制备的;本发明的双层涂层包括:(1)用水解或部分水解的硅酸酯与烷氧基锆、烷氧基铝和/或烷氧基钛接触而制备的一涂层,和(2)一含硅材料,或含氮硅材料,或含碳硅材料的顶端保护涂层,这些材料是靠加热硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物而产生。第一层是一层
Si O2/Ti O2或Si O2/Zi O2,或Si O2/Ti O2/Zr O2,或Si O2/Al2O3,或Si O2/Ti O2/Zr O2/Al2O3的平面化和钝化涂层它们是运用已知的技术加上的,其中包括电子器件的流动涂层,自旋涂层,浸渍涂层和喷射涂层方法以及后来的陶瓷化。本发明双层涂层的第二层是含硅材料作的防护性阻挡涂层,含硅材料是用硅烷,烷基硅烷,卤硅烷,卤乙硅烷,硅氮烷或烷烃,硅烷和氨的混合物经CVD或等离子增强CVD方法产生出来。
本发明同时还涉及电子器件的三层涂层的低温成形,其中,第一层是Si O2/Ti O2或Si O2/Zi O2,或Si O2/Ti O2/Zr O2,或Si O2/Al2O3,或Si O2/Ti O2/Zr O2/Al2O3涂层。用于钝化的第二层是陶瓷或类似陶瓷的涂层,这是用预陶瓷含氮硅聚合物涂层的陶瓷化而获得的,或者是用热,UV,CVD,等离子增强CVD或激光技术沉积的含氮硅,含氮硅碳或含碳硅层。本发明三层涂层的第三层是顶部涂层;它们是:(a卤硅烷、卤乙硅烷,卤聚硅烷或其混合物用CVD、等离子增强CVD或金属辅助CVD的方法而得到的含硅材料,或(b)卤硅烷、卤乙硅烷、卤聚硅烷或其混合物和烷烃用CVD或等离子增强CVD的方法而得到含碳硅材料,或(c)硅烷、卤硅烷、卤乙硅烷、卤聚硅烷或其混合物与氨用CVD或等离子增强CVD的方法而得到含氮硅材料,或(d)六甲基乙硅氮烷用CVD或离子增强CVD的方法或者硅烷,烷基硅烷,烷烃和氨的混合物用CVD或等离子增强CVD的方法而得到含氮硅碳材料。
本发明涉及发现了一种水解或部分水解的硅酸酯能与烷氧基锆、烷氧基铝或烷氧基钛(或称锆、铝、钛的醇盐)相接触,从而制备成新颖的预陶瓷聚合物,它能在低温下转变成陶瓷或类似陶瓷的材料,这种材料对于电子器件不规则的表面作为平面化涂层是很有用的。在本发明中,“醇盐”意为任何烷氧基、酰氧基、乙烷氧基、三烷氧基或四烷氧基这样的有机基团,它连在一种金属上,并在已讲过的陶瓷化条件下及能够热解以产生金属氧化物。采用本发明,制备了象SiO2/ZiO2,SiO2/TiO2,SiO2/TiO2/ZrO2和SiO2/Al2O3这样一些陶瓷或类似陶瓷的平面化涂层配方。这些金属氧化物陶瓷或类似陶瓷的涂层能使由于集成电路或电子器件的不规则外形而产生的机械应力减至最小,同时还能有助于在热循环条件下防止以后的多层涂层产生微裂纹。
本发明还涉及一种涂层系统的成型,其中第一层是一含SiO2的平面化涂层,它是从一种含硅和氧的材料的溶解液中获得的。其中,经过热处理,该材料陶瓷化,从而形成了一种含SiO2的材料。这种材料可以包括,但不仅局限于,有机原硅酸盐,Si(OR)4,或(RO)3Si O Si(OR)3类凝聚酯以及任何其它Si OR源,它们经过水解及以后的热解,基本上是Si O2的材料就产生出来了。这样如果在热条件下含碳基团可水解从而挥发,基本留下Si O2的话,那么这类材料如含Si O2的材料则可包括在本组范围内。所谓硅酸酯,意为水解和热解后基本上产生Si O2的材料。在本发明中所谓“水解或部分水解的硅酸酯”意为任何含Si O2的材料,如上所述,它们经过用水化的,碱性的或酸性的条件处理,而水解或部分水解该酯。
在本发明中,所谓“类似陶瓷的”是指那些热解过的含硅氮材料,它们不完全不是残留碳和/或氢,而在特性上类似于陶瓷。在本发明中,所谓“电子器件”是包括但不仅限于这种的器件:电子器件,硅基器件,砷化镓器件,聚平面阵,光一电器件,光电电池和光学器件。
本发明还涉及发现了这些陶瓷既能用作、多层电子器件的涂层,也可以用作其它集成电路的涂层。本发明的涂层也可用于那些与防护基板无关的功能性目的,如:生产晶体管类器件的绝缘层,掺杂的绝缘层;生产电容器或电容器类器件的含硅颜料填充的粘接剂系统,多层器件;3-D器件,SOI器件,超晶格及类似器件。
本发明还涉及用陶瓷或类似陶瓷的涂敷的电子器件的含硅氮钝化涂层的成形方法,顶涂层用CVD,等离子增加CVD或金属催化CVD技术制备而成。
用平面化涂层涂覆基板可产生本发明的单层涂层,做法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从包括烷氧基铝、烷氧基钛和烷氧基锆这一组中选出。用稀释了的预陶瓷混合物溶液涂加基板,干燥预陶瓷聚合物溶液,使溶剂挥发,从而在
基板上沉积下预陶瓷涂层,加热已涂基板,使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,从而在基板上形成单层陶瓷或类似陶瓷的涂层。
在铝,钛和锆这些活性很高的醇盐情况下,如丙醇盐,异丙醇盐,丁醇金属和异丁醇金属,以及戊烷锆(也称乙酰丙酮锆),金属醇盐和硅酸酯可以预先混合,然后在乙醛中加热回流24小时,以提供一种均匀反应的混合物,该混合物在控制速率下可均匀水解。回流会产生缩合反应,反应出的产品则可均匀地进行水解,然而,力图在没有缩合反应的情况下预水解上述提到的活性很高的醇盐和硅酸酯的混合物将导致金属醇盐比硅酸酯优先和快速水解的结果,从而使反应混合物成了快速非均匀的胶凝体。
本发明生产的涂层对包括但不仅限于电子器件的许多基板都表现出结实的粘附性,抗摩防湿。只是在分解容器中低分解温度的情况下,基板的热和化学稳定性的需要才限制了本发明所要涂敷的基板和器件的选择。
此外,本发明涉及一种多层陶瓷或类似陶瓷的涂层的成形方法,该方法包括:(A)用一平面化涂层涂加电子器件,做法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从包括烷氧基铝,烷氧基钛和烷氧基锆这一组中选出。用稀释了的预陶瓷混合物溶液加涂到电子器件上,从而在电子器件上沉积下预陶瓷涂层。加热已涂器件,使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,从而产生陶瓷或类似陶瓷的涂层;以及(B)在已涂陶瓷器件上涂加含硅涂层,做法是,在一反应罐中,在200和1000℃之间的一温度上,在有已涂陶瓷器件存在的情况下,分解处于蒸汽相的硅烷,卤硅烷,卤乙硅烷或其混合物,于是电子器件上形成了多层陶瓷涂层。用预陶瓷溶液来涂覆电子器件的方法可以是但又不限于是流动涂层,自旋涂层,喷射或浸渍涂层技术。
本发明还涉及一种多层陶瓷或类似陶瓷的防护涂层的形成方法,该方法包括(A)用一涂层涂覆到电子器件上,做法是,在一溶剂中,把水解的或部分水解的硅酸酯预陶瓷聚合物稀释成低固态,该聚合物曾与2,4戊二铜酸锆(pentanedionate)接触过,把稀释了的预陶瓷聚合物溶液涂加到电子器件上,干燥稀释了的预陶瓷聚合物溶液,使溶剂蒸发,从而在电子器件上沉积下预陶瓷涂层,加热已涂器件,使聚合物陶瓷化成二氧化硅和二氧化锆,从而产生陶瓷或类似陶瓷的涂层;以及(B)在电子器件上的陶瓷或类似陶瓷的涂层上涂加含硅涂层,方法是,在一反应罐中,在200和400℃之间的一温度上,在已有涂器件存在的情况下,分解处于蒸汽相的硅烷,卤硅烷,卤乙硅烷或卤乙硅烷的混合物,于是电子器件上形成了多层陶瓷或类似陶瓷的防护性涂层。
本发明还涉及一种多层的陶瓷或类似陶瓷的涂层的形成方法,该方法包括(A)用一涂层涂覆一电子器件,具体做法是,在一溶剂中,把水解的或部分水解的硅酸酯预陶瓷聚合物稀释成低固态,该聚合物曾与乙丁氧基二乙酰基丙酮酸钛(Titanium dibutoxy diacetylacetonate)相接触过,把上述稀释过的预陶瓷聚合物溶液加到电子器件上,干燥稀释过的预陶瓷聚合物溶液,使溶剂挥发,从而在电子器件上沉积下一预陶瓷涂层。加热已涂的器件,把聚合物陶瓷化成二氧化硅和二氧化锆,从而产生陶瓷或类似陶瓷的涂层;以及(B)向已涂覆的器件上施加一层含硅涂层,具体做法是,在一反应罐中,在200和400℃之间的一温度上,并有涂覆器件存在的情况下,分解处于蒸汽相的硅烷,卤硅烷,卤乙硅烷或卤乙硅烷的混合物,于是电子器件上就形成了多层陶瓷或类似陶瓷的涂层。
本发明还涉及一种多层的陶瓷或类似陶瓷的涂层的形成方法,该方法包括(A)用一涂层涂覆一电子器件,具体做法是,用一溶剂把水解的或部分水解的硅酸酯预陶瓷聚合物稀释成低固态,该聚合物曾与烷氧基铝相接触过,把上述稀释过的预陶瓷聚合物溶液涂到电子器件上,干燥稀释过的预陶瓷聚合物溶液,使溶剂挥发,从而在电子器件上沉积下一预陶瓷涂层;加热已涂的器件,把聚合物陶瓷化成二氧化硅和二氧化锆,从而产生陶瓷或类似陶瓷的涂层,以及(B)向电子器件上的陶瓷或类似陶瓷的涂层上施加一含硅涂层,具体做法是,在一反应罐中,在200和400℃之间的一温度上,并有涂覆器件存在的情况下,分解处于蒸汽相的硅烷,卤硅烷,卤乙硅烷或卤乙硅烷的混合物,于是电子器件上就形成了多层的陶瓷或类似陶瓷的防护涂层。
本发明还涉及一种多层的陶瓷或类似陶瓷的涂层的形成方法,该方法包括(A)用一涂层涂覆一电子器件,具体做法是,在一溶剂中,稀释一种预陶瓷混合物,该混合物由水解的或部分水解的硅酸酯和从包括烷氧基铝烷氧基钛、和烷氧基锆这一组中选出的一种金属氧化物前体组成;把上述稀释过的预陶瓷混合物溶液涂到电子器件上,干燥稀释过的预陶瓷聚合物的混合溶液,使溶剂挥发,从而在该电子器件上沉积下一层预陶瓷涂层。加热已涂覆的器件,使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,从而形成一陶瓷或类似陶瓷的涂层;以及(B)向已涂覆的器件上施加由含氮硅材料组成的钝化涂层,做法是,在一溶剂中,把预陶瓷含氮硅聚合物稀释成低固态,把稀释过的预陶瓷含氮硅聚合物加到陶瓷涂覆的器件上,干燥稀释过的预陶瓷含氮硅聚合物溶液,使溶剂挥发,从而在涂覆的电子器件上沉积一层预陶瓷含氮硅涂层。在惰性气体或含氨气体中加热涂覆的器件,从而产生了陶瓷或类似陶瓷的含氮硅涂层,以及(C)向已涂覆的器件上施加含硅涂层,做法是,在一反应罐中,在200和900℃之间的温度下,在有已涂器件存在的情况下,分解处于蒸汽相的硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物,从而在电子器件上就形成多层的陶瓷或类似陶瓷的涂层。
本发明中,多层涂层所使用的平面化和钝化涂层的陶瓷化是在200和1000℃温度之间获得的,最好在200和400℃之间。
在本发明中,在掺入如四乙酰丙酮酸锆(Ziconium tetra acetylace tonate),Zr(CH3COCH2COCH3)4,或乙丁氧基二乙酰基丙酮酸钛,Ti(CH3COCH2COCH3)2-(OCH2CH2CH2CH3)2,和/或乙酰丙酮酸铝,Al(CH3COCH2COCH3)3后在诸如乙醇这样的溶剂中,把含有水解或部分水解的硅酸酯的预陶瓷聚合物稀释成低固态(即重量的0.1~10%)。稀释过的预陶瓷聚合物溶剂溶液回流24小时,然后加涂到电子器件上,溶剂在干燥时挥发掉。正如上面已讨论过的,某些金属醇盐水解活性太大,因此在进行水解前,应当与回流在溶剂(如乙醇)中的硅酸酯和混合物预先混合在一起。把稀释过的预陶瓷聚合物溶液涂到电子器件上的方法可以是,但不仅限于是,自旋涂覆,浸渍涂覆,喷射涂覆或流动涂覆。采用这种方法,把已涂均匀的预陶瓷涂层的器件在200℃温度下加热大约20小时,或者在400℃温度下加热一小时,就能使其陶瓷化,与先前的技术相比,这表明大大降低了加工温度。这样在器件上就可产生出不到2微米(或大约5000A)的陶瓷或类似陶瓷的平面化薄涂层。这样形成的平面化涂层上可用本发明的钝化含氮硅涂层涂覆或者用下述涂层涂覆:用CVD或PECVD施加的含硅涂层,含碳硅涂层,含氮硅涂层,含氮硅碳涂层,或者这些涂层的组合。
表1列出了本发明平面化涂层形成的例子,当然不仅限于这些例子。
表1本发明部分平面化涂层的组份
样品 SiO2ZrO2TiO2Al2O3
序号 重量% 重量% 重量% 重量%
1 90 10
2 100
3 90 10
4 74.7 25.3
5 80 10 10
6 70 10 10 10
7 80 20
8 70 30
9 80 20
10 70 30
11 70 30
其中Wt%是重量的百分数;ZrO2是从烷氧基锆中产生的二氧化锆;TiO2是从烷氧基钛中产生的二氧化钛,Al2O3是从,2,4-戊二酮酸铝中产生的氧化铝。
表1表示在涂层中占重量10%的金属醇盐的化合物,而金属氧化物浓度的范围可以从重量0.1%的金属醇盐到约占30%之间。采用水解或部分水解的硅酸酯对金属醇盐(以及这样获得的金属氧化物)的不同的比率,可以设计出带有所需热膨胀系数(CTE)的专门公式。在给电子器件加覆涂层时,要求涂层的CTE允许足够的热膨胀,从而当涂覆的电子器件暴露在不同温度中时,尽量减少微裂纹的形成。表Ⅱ表示用在涂于电子器件上的几种常用陶瓷材料的CTE值以及本发明的陶瓷平面化涂层的CTE值。
上述出现的参考资料来源于美国化学学会
1985年出版的“陶瓷源”第一卷第350-1页上。本发明组合物的CTE值是计算值。
在本发明中能在化学化合物中起作用的铝、锆和钛不仅局限于上面列出的氧化物或二氧化物的形式,还包括任何甚至所有形式的以及能与水解或部分水解的硅酸酯相混合并能陶瓷化以产生本发明中的混合氧化平面化涂层系统的金属混合物。
表Ⅱ,热膨胀系数
金属氧化物 CTE
二氧化钛TiO29.4
氧化铝Al2O37.2-8.6
二氧化锆ZrO27.6-10.5
二氧化硅SiO20.5
硅Si 2.14
80%SiO2/20%TiO22.28
75%SiO2/25%TiO22.63
90%SiO2/10%TiO21.39
90%SiO2/10%ZrO21.21
70%SiO2/30%TiO23.17
70%SiO2/30%ZrO22.63
80%SiO2/20%ZrO21.92
75%SiO2/25%Al2O32.18
75%SiO2/25%ZrO22.28
本发明合成涂层中的第二层即钝化的含氮硅层能防止离子杂质进入。适用于本发明的预陶瓷含氮硅聚合物是本行业熟知的,它包括但不限于,硅氮烷,乙硅氮烷,聚硅氮烷,环硅氮烷以及其它含氮的硅材料。适用于本发明的预陶瓷含氮硅聚合物必须能在温度升高时转变成陶瓷的或类似陶瓷的材料。本发明也可采用预陶瓷硅氮烷聚合物和/或其它含硅含氮的材料。本发明中采用的预陶瓷硅氮烷聚合物或聚硅氮烷的例子包括,Gual在美国专利第4,312,970号(1982年1月26日公布)中,在第4340619号(1982年7月20日公布)中,在第4395460号(1983年7月26日公布)中以及在第4,404,153号(1983年9月13日公布)中所描述的聚硅氮烷。合适的聚硅氮烷还包括下面专利中描述过的:Haluska的美国专利第4,482,689号(1984年11月13日公布),Seyferth等人的美国专利第4,397,828号(1983年8月9日公布),
seyferth等人的美国专利第4,482,669号(1984年11月13日公布),由Cannady在美国专利第4,540,803号(1985年9月10日公布),第4,535,007号(1985年8月13日公布)和第4,543,344号(1985年9月24日公布),以及由Baney等人在1984年9月21日提出的美国专利申请系列号为652,939的文献中所介绍的聚硅氮烷也适用于本发明。适用于本发明的还有靠H2SiX2与NH3的反应制备出的乙氢化硅氮烷聚合物,其中X=一个卤素原子。本行业的人们是熟知这些(H2SiNH)n聚合物的,但却从未用它们来保护电子器件。(例如,请阅1983年8月9日由Seyferfh的美国专利第4,397,828号)。
还包括在适用于本发明范围的预陶瓷含氮硅聚合物材料还有从环硅氮烷和卤化了的乙硅烷派生出来的新颖预陶瓷聚合物,以及从环硅氮烷和卤硅烷派生出来的新预陶瓷聚合物。下述专利中公开了这些材料并提出权利要求:名为“从环硅氮烷和卤化了的乙硅烷派生出的新颖预陶瓷聚合物及其制备方法”的专利申请系列第926,145号,和名为“从环硅氮烷和卤硅烷派生出的新颖预陶瓷聚合物及其制备方法”的专利申请系列第926,607号,这些专利申请是以Loren A.Haluska的名义提出的。
从环硅氮烷和卤硅烷以及/或卤化了的乙硅烷派生出的上述新颖预陶瓷含氮硅聚合物对于保护能经受高温的任何基板也是有用的,这种温度是预陶瓷聚合物进行陶瓷时必要的。其它含硅含氮材料还可用在本发明中。
在对含氮硅预陶瓷聚合物进行陶瓷化或部分陶瓷化时,优先的温度范围是从200至400℃。而含氮硅预陶瓷聚合物进行陶瓷化时,更优先的温度范围是从300至400℃。然而,在含氮硅涂层进行陶瓷化或部分陶瓷化时,加热的方法则不仅限于常用的加热方法。用来作为本发明的平面化和钝化涂层的含氮硅聚合物涂层也可用其它辐射手段进行处理,例如,暴露在激光束中。但是本发明中陶瓷化温度不限制在400℃以下。陶瓷化技术采用的温度高达并包括至少1000℃,这对本专业中技术熟练的人来说的显而易见的,在基板能够经受这种高温的情况下也能用于本发明中。
本发明中的所谓“处理”是指使原始材料的共同反应和陶瓷化或部分陶瓷化,方法是加热到产生一种固态聚合陶瓷或类似陶瓷的涂层这一程度。或者,在本发明的三层涂层的情况下,第二层
钝化涂层可从包括含氮硅材料,含氮碳化硅材料和含碳硅材料这一组中选出。采用由反应硅烷,卤硅烷,卤聚硅烷或卤乙硅烷和氨形成的反应产物的CVD或等离子增强CVD的方法沉积含氮硅材料。而含碳硅材料是用由反应硅烷,卤硅烷,卤聚硅烷,或卤乙硅烷和含一至六个碳原子的烷烃或烷基硅烷形成的反应产物经CVD或等离子增强CVD的方法来沉积的。含氮硅碳材料用六甲基乙硅氮烷的CVD或PECVD方法沉积,或者用硅烷,烷基硅烷,含有一至六个碳原子的烷烃和氨的混合物经CVD或PECVD方法沉积。
本发明的多层涂层的第二层钝化涂层可由下述方法产生:向平面化涂层上涂覆钝化陶瓷或类似陶瓷的涂层,此涂层从包括(ⅰ)含氮硅涂层;(ⅱ)含碳硅涂层;以及(ⅲ)一含氮碳化硅涂层的这一组中选出。其中,把含氮硅涂层涂加到已涂陶瓷或类似陶瓷的涂层的电子器件上,做法是采用方法从包括下面的这一组中选出:(a)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在氨气下的化学蒸汽沉积,(b)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有氨存在情况下的等离子增强化学蒸汽沉积,(c)硅和含氮预陶瓷聚合物的陶瓷化;和其中,把含氮碳化硅涂层涂加到已涂陶瓷或类似陶瓷电子器件上,采用的方法是从下面的这一组中选出的:(1)六甲基乙硅氮烷的化学蒸汽沉积,(2)六甲基乙规氮烷的等离子增强化学蒸汽沉积,(3)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷以及氨存在下的化学蒸汽沉积;和(4),硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷以及氨存在情况下的离子增强的化学蒸汽沉积,和其中含碳硅涂层是用从下面这一组中选出的方法沉积:(ⅰ)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的化学蒸汽沉积和(ⅱ)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物,在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的等离子增强化学蒸汽沉积,从而产生钝化陶瓷或类似陶瓷涂层。
把预陶瓷硅氮烷或其它含氮硅聚合物溶液涂加到(用上述讨论过的任何方法)已用SiO2/Zr(CH3COCH2COCH3)4或SiO2/Zr2(CH3COCH2COCH3)4/Ti(CH3COCH2COCH3)2(OCH2CH2CH2CH3)2的SiO2/金属醇盐涂层涂覆过的电子器件上,然后把它们分别陶瓷化成SiO2/金属氧化物,比如SiO2/ZrO2,或SiO2/ZrO2/TiO2。然后进行干燥,使溶剂挥发。用这种方法来沉积预陶瓷含氮硅聚合物涂层,而该涂层的陶瓷化是靠加热已涂器件,在温度达400℃的氩气下1小时。这样,不到2微米(或大约5000埃)的薄陶瓷钝化涂层就在器件上形成了。
本发明多层涂层的第三层能这样生产出:向钝化陶瓷或类似陶瓷涂层上加涂含硅涂层,该涂层是从包括(ⅰ)硅涂层,(ⅱ)含碳硅涂层,(ⅲ)含氮硅涂层,以及(ⅳ)含氮硅碳涂层这一组中选出;其中,把硅涂层加涂到钝化涂层上,采用的方法是从包括下面的这一组中选出的:(a)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物的化学蒸汽沉积,(b)硅烷,卤硅烷,卤乙硅烷卤聚硅烷或其混合物的等离子增强化学蒸汽沉积,或(c)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物的金属辅助化学蒸汽沉积;其中,采用从下面的这一组中选出的方法来涂加含碳硅涂层:(1)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的化学蒸汽沉积,(2)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的等离子增强化学蒸汽沉积;其中,采用从下面的这一组中选出的方法来沉积含氮硅涂层:(A)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物与在有氨存在的情况下的化学蒸汽沉积,(B)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有氨存在情况下的等离子增强化学蒸汽沉积,和(C)硅和含氮预陶瓷聚合物的陶瓷化;其中,采用从下面的这一组中选出的方法来沉积含氮硅碳涂层:(ⅰ)六甲基乙硅氮烷的化学蒸汽沉积,(ⅱ)六甲基乙硅氮烷的等离子增强化学蒸汽沉积,(ⅲ)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷以及氨存在情况下的化学蒸汽沉积,和(ⅳ)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子
的烷烃或烷基硅烷以及氨存在情况下的等离子增强化学蒸汽沉积,从而在电子器件上产生含硅涂层。本发明中复合涂层的第三含硅防护层或顶层可以用金属辅助CVD加工方法在较低反应温度下获得;该方法见于1986年2月2日用Sudar-Sanan Varaprafh的名义申请的美国专利申请系列号第835029,题为“含硅涂层及其制备方法”;或者用常用的非金属辅助CVD和等离子增强CVD技术也可获得。常用CVD技术的高温度条件一般会限制所能涂覆的基板材料的类型。这样,那些加热到400℃以上就要受损坏的电子器件则不能用常规的CVD技术来涂加涂层。本发明所要涂覆的基板和器件的选择只受在分解容器的环境里较低分解温度中基板的热和化学稳定性的需要的限制。
本发明生产的涂层具有低缺陷密度,在电子器件上,作为防护涂层、作为防腐抗磨涂层、作为保温抗潮湿涂层、作为绝缘层,以及作为防止象Na+和Cl-这样的离子杂质的扩散膜都是有用的。本发明的SiO2/金属氧化物的涂层和含氮硅陶瓷或陶瓷类涂层作为电子器件本体内和金属层之间的中间绝缘体,从而替代了自旋(Spin-on)玻璃膜。
除了能保护电子器件不受环境影响外,本发明的涂层也可用于功能性目的。本发明的涂层可作为绝缘层,如生产晶体管一类的器件的绝缘层,生产电容器和电容器一类器件所需的含硅颜料填充的粘接系统用的绝缘层,多层器件,3-D器件,SOI器件以及超晶格器件的绝缘层。
例1
用0.3125克的乙基原硅酸盐和0.0396克的四二乙酰丙酮酸锆
(Zirconium tetra acetylacetonate)组成的反应混合物在35.2克的乙醛中溶解,回流24小时。然后把该反应混合物冷至室温。向反应混合物中加0.033克水和一滴5%的盐酸,再把溶液加热至60-75℃45分钟,以形成水解的预陶瓷聚合物溶液。然后把水解的预陶瓷聚合物溶液转动涂加到CMOS电子器件上。这样就沉积下预陶瓷聚合物涂层,其陶瓷化是这样做的:在一个二英寸的林白(Lindberg)炉中,在200℃温度下,把已加涂的器件加热约20小时。附加的涂层也要在400℃温度下加热1小时进行陶瓷化。于是,在器件上就形成了不到2微米(或约4000埃)的薄陶瓷平面化涂层。采用这种方法也可在铝板上施加涂层。
例2
把含8.6毫升的乙基原硅酸盐,8.6毫升的乙醛,2.8毫升的水和一滴5%的盐酸的溶液在60℃下加热30分钟,用60毫升的乙醛和0.04克的二丁氧基二乙酰丙酮酸钛,Ti(OC4H9)2(O2C5H7)2稀释溶液,并使温度在24小时内保持在室温上,从而产生出预陶瓷聚合物溶液。然后把该预陶瓷聚合物溶液转动涂加到一电子容器上。这样就沉积下预陶瓷聚合物涂层,其陶瓷化是这样做的:在200℃温度下,加热已涂的电子器件约20小时,或者在400℃温度下加热1小时,于是在电子器件上就形成了不到2微米(或约4000埃)的薄陶瓷平面化涂层,采用这种方法也可在铝板上施加涂层。
例3
把含5.04毫升的乙基原硅酸盐,5.04毫升的乙醛,9.9毫升的水和两滴5%盐酸的溶液在60-70℃的温度下加热30分钟,再用60毫升的乙醛和一滴5%的盐酸,使溶液稀释到重量百分比为3.3的固态。使溶液在4天内保持在室温上。然后用10克这样的溶液与0.235克的三2,4-戊二酮铝(Aluminum tris pentanedionate)和26.2克的乙醛相混合,从而形成了一种清澈的稳定的预陶瓷聚合物溶液。然后把该预陶瓷聚合物溶液转动涂加到-CMOS电子器件上,这样预陶瓷聚合物涂层就沉积下来了,其陶瓷化是这样做的:在200℃温度下,加热已涂器件约20小时,或者在400℃温度下加热一小时,于是在电子器件上就形成了不到2微米(或约4000埃)的薄陶瓷平面化涂层。采用这种方法也可在铝板上施加涂层。
例4
把乙基原硅酸盐,三2,4戊二酮酸钛(tilanium divutoty diacetyla cetonale),四二乙酰丙酮酸锆(zirconium tetra acetylacetonate)和乙酰丙酮酸铝(aluminum acetylacetonate)分别按重量百分比为7∶1∶1∶1制备成混合物,然后在低固态即1.0的重量百分比下,在乙醛中回流24小时。在每一烷氧基中加进一个当量的水,在有少量盐酸存在的情况下,使溶液水解,把溶液加热至60-75℃45分钟,从而产生水解了的预陶瓷聚合物溶液。然后把预陶瓷聚合物溶剂溶液转动涂加到
CMOS电子器件上,这样就沉积下预陶瓷聚合物涂层,其陶瓷化是这样做的:在200℃温度下,把已涂器件加热约20小时或者在400℃温度下,加热一小时。于是在电子器件上就形成了不到2微米(或约4000埃)的薄陶瓷平面化涂层。采用这种方法也可在铝板上施加涂层。
例5
在美国专利第4,540,803号例1中用Cannady方法制备的一种预陶瓷硅氮烷聚合物,是在甲苯里被稀释到1.0的重量百分比。然后使稀释了的预陶瓷硅氮烷聚合物溶液流动涂加到例1至例4所述的已涂电子器件上,在没有空气的情况下进行干燥,使溶剂得以挥发。这样就沉积下预陶瓷聚合物钝化涂层,其陶瓷化是这样做的,在氩气中400℃温度下,把已涂器件加热约一个小时。于是在器件上就形成了不到2微米(或约3000埃)的含氮硅薄陶瓷或类似陶瓷的钝化涂层。采用这种方法也可在铝板上涂加涂层。
例6
采用例5的生产程序,用美国专利第4,482,689号例13中介绍的Haluska方法制备的一种含5%钛的预陶瓷硅氮烷聚合物,流动涂加到已涂SiO2/金属氧化物的电子器件上,干燥,使溶剂挥发,这样就沉积下一种预陶瓷聚合物涂层,其陶瓷化是这样做的:在氩气中把已涂器件加热1小时,温度为400℃。于是在器件上就形成了不到2微米(或约3000埃)的含氮硅薄陶瓷或类似陶瓷的钝化涂层。采用这种方法也可在铝板上涂加涂层。
例7
按照例5的程序,用美国专利第4,395,460号例1中介绍的Gual方法制备的一种预陶瓷硅氮烷聚合物,流动涂加到已涂SiO/金属氧化物的电子器件上,干燥,使溶剂挥发,这样就沉积下一种预陶瓷聚合物涂层,其陶瓷化是这样做的:在氩气中把已涂器件加热一小时,温度为400℃。于是在器件上就形成了不到2微米(或约3000埃)的含氮硅薄陶瓷或类似陶瓷的钝化涂层。采用这种方法也可在铝板上涂加涂层。
例8
根据美国专利第4,397,828号例1中介绍的seyferth方法制备的含重量百分比为1-2的二氢化硅氮烷聚合物的二乙基醚溶液中,流动涂覆到已按上述例1-4涂过的CMOS器件上。已涂器件在氮气里在400℃温度下加热一小时。正如CMOS电路测定仪确定的,涂层和热解处理不会对器件的功能起不良影响。已涂电子器件暴露在0.1M的NaCl下长达4个半小时,电路才失灵。未加保护的CMOS器件只要暴露在0.1M的NaCl下不到一分钟就不能工作了。采用这种方法也可以在铝板上涂加涂层。
例9
把例1至例8中涂加了平面化和/或钝化涂层的电子器件再按下述方法涂上阻挡层(barrier coating):把六氟乙硅烷50托与已按上述方法涂覆过的CMOS电子器件一起放入到派雷克期玻璃反应容器里。为了防止暴露在大气里,六氟乙硅烷按这种方式转移到玻璃容器里。把容器密封,在一炉子大约360℃的温度下加热30分钟。此时,六氟乙硅烷原材料分解,在已涂的电子器件上形成一含硅顶层。在容器已与真空管连接上之后,取走反应的副产品,各种卤硅烷的混合物,以及任何未起反应的原材料。然后取走已涂陶瓷的电子器件,此时在它上面分解了的六氟乙硅烷原材料已经沉积下一种含硅的顶涂层。测试已涂电子器件,所有的电路都工作。用来测试涂层前后的仪器是Teradyne模拟电路测试仪J133C型,并配有CMOS4000AE系列电路板和CMOS A Quad 2 Input Nand Gate Device Board。该装置测试器件的DC参数。这种测试是一种行/不行(Go/no Go)式的测试。
Claims (23)
1、一种在基板上形成多层的陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发掉,从而在电子器件上沉积下一预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,加热已涂器件至200和1000℃之间的一温度上,从而产生陶瓷或类似陶瓷的平面化涂层;
(Ⅱ)在陶瓷或类似陶瓷的平面化涂层上涂覆钝化涂层,该钝化涂层是从包括(i)含氮硅涂层,(ii)含碳硅涂层和(iii)含氮硅碳涂层这一组中选出;其中,把含氮硅涂层涂加到电子器件的平面化涂层上,采用的方法是从下面的这一组中选出:(a)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有氨存在情况下的化学蒸汽沉积,(b)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有氨存在情况下的等离子增强化学蒸汽沉积,(c)使硅和含氮预陶瓷聚合物陶瓷化;和其中,把含氮硅碳涂层涂覆到已涂陶瓷或类似陶瓷的电子器件上,采用的方法是从下面的这一组中选出:(1)六甲基乙硅氮烷的化学蒸汽沉积,(2)六甲基乙硅氮烷的等离子增强化学蒸汽沉积,(3)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷以及氨存在情况下的化学蒸汽沉积,(4)硅烷,烷硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在含一至六个碳原子的烷烃或烷基硅烷以及氨存在情况下的等离子增强化学蒸汽沉积;其中,采用从下面的这一组中选出的方法来沉积含碳硅涂层(i)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的化学蒸汽沉积和(ii)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的等离子增强化学蒸汽沉积,从而产生钝化涂层;以及;
(Ⅲ)把从下面的这一组中选出的含硅涂层涂覆到钝化涂层上:(i)硅涂层,(ii)含碳硅涂层,(iii)含氮硅涂层,和(iv)含氮硅碳涂层;其中,采用从下面的这一组中选出的方法来向钝化涂层涂加硅涂层:(a)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物的化学蒸汽沉积,(b)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物的等离子增强化学蒸汽沉积,或(c)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物的金属辅助化学蒸汽沉积;其中采用从下面的这一组中选出的方法来涂加含碳硅涂层:(1)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的化学蒸汽沉积,(2)硅烷、烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的等离子增强化学蒸汽沉积;其中,采用从下面的这一组中选出的方法来沉积含氮硅涂层:(A)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有氨存在情况下的化学蒸汽沉积,(B)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有氨存在情况下的等离子增强化学蒸汽沉积,和(C)硅和含氮预陶瓷聚合物的陶瓷化;其中,采用从下面的这一组中选出的方法来沉积含氮硅碳涂层;(i)六甲基乙硅氮烷的化学蒸汽沉积,(ii)六甲基乙硅氮烷的等离子增强化学蒸汽沉积,(iii)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷以及氨存在情况下的化学蒸汽沉积,和(iv)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷以及氨存在情况下的等离子增强化学蒸汽沉积,以产生出含硅涂层,由此在电子器件上获得了多层陶瓷或类似陶瓷的涂层。
2、一种在基板上形成双层的陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发掉,从而在电子器件上沉积下一预陶瓷涂层;(C使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,加热已涂器件至200和1000℃之间的一温度上,从而产生陶瓷或类似陶瓷的平面化涂层;
(Ⅱ)在陶瓷或类似陶瓷的平面化涂层上涂覆钝化涂层,该钝化涂层是从包括(ⅰ)含氮硅涂层,(ⅱ)含碳硅涂层和(ⅲ)含氮硅碳涂层这一组中选出;其中,把含氮硅涂层涂加到电子器件的平面化涂层上,采用的方法是从下面的这一组中选出:(a)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有氨存在情况下的化学蒸汽沉积,(b)硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有氨存在情况下的等离子增强化学蒸汽沉积,(c)使硅和含氮预陶瓷聚合物陶瓷化;其中,把含氮硅碳涂层涂覆到已涂陶瓷或类似陶瓷的电子器件上,采用的方法是从下面的这一组中选出:(1)六甲基乙硅氮烷的化学蒸汽沉积,(2)六甲基乙硅氮烷的等离子增强化学蒸汽沉积,(3)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在含一至六个碳原子的烷烃或烷基硅烷以及氨存在情况下的化学蒸汽沉积,(4)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷以及氨存在情况下的等离子增强化学蒸汽沉积;其中,采用从下面的这一组中选出的方法来沉积含碳硅涂层:(1)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六碳原子的烷烃或烷基硅烷存在情况下的化学蒸汽沉积和(ⅱ)硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物在有含一至六个碳原子的烷烃或烷基硅烷存在情况下的等离子增强化学蒸汽沉积,以产生钝化涂层,此在电子器件上形成了双层陶瓷或类似陶瓷的涂层。
3、一种在基板上形成单层的陶瓷或类似陶瓷的涂层的方法,包括:
(A)用一涂层涂覆电子器件,方法是用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从烷氧基铝、烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂加到电子器件上;
(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发掉,从而在电子器件上沉积下一预陶瓷涂层;
(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,把已涂器件加热到200和1000℃之间的一温度上,从而产生陶瓷或类似陶瓷的涂层。
4、一种在基板上形成多层的陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体是从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发掉,从而在电子器件上沉积下一预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,在200和1000℃之间的某温度下加热已涂器件,从而产生陶瓷或类似陶瓷的平面化涂层;
(Ⅱ)在已涂陶瓷或类似陶瓷的器件上涂加含硅涂层,做法是,在一反应罐中,在200和600℃之间的一温度上,并在已涂陶瓷器件存在的情况下,分解处于蒸汽相的硅烷,卤硅烷,卤乙硅烷,卤聚硅烷,或其混合物,由此电子器件上形成了多层的陶瓷或类似陶瓷的涂层。
5、一种在基板上形成多层的陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛,和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆电子器件上,(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发掉,从而在电子器件上沉积下一预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是在200和1000℃之间的一温度上加热已涂器件,从而产生陶瓷或类似陶瓷的平面化涂层;
(Ⅲ)在已涂陶瓷或类似陶瓷的器件上涂加含氮硅涂层,做法是:在一反应罐中,在200和1000℃之间的某温度下,并有已涂陶瓷或类似陶瓷的器件存在的情况下,分解处于蒸汽相的硅烷,卤硅烷,卤乙硅烷,卤聚硅烷,或其混合物以及氨于是电子器件上形成了多层的陶瓷或类似陶瓷的涂层。
6、一种在基板上形成多层陶瓷或类似陶瓷的涂层以保护电子器件或用作其它功能性目的的方法,包括:
(Ⅰ)(A)用陶瓷或类似陶瓷的平面化涂层涂覆电子器件,方法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发掉,从而在电子器件上沉积下一预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,在200和1000℃之间的一温度上加热已涂器件,从而产生陶瓷或类似陶瓷的平面化涂层;
(Ⅱ)在已涂陶瓷或类似陶瓷的器件上涂加含碳硅涂层,做法是,在一反应罐中,在200和1000℃之间的某温度上,并有已涂陶瓷或类似陶瓷的器件存在的情况下,分解处于蒸汽相的硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷,或其混合物,以及含有一至六个碳原子的烷烃或烷基硅烷,于是电子器件上形成了多层陶瓷或类似陶瓷的涂层。
7、一种在基板上形成多层陶瓷或类似陶瓷的涂层以保护电子器件或用作其它功能性目的的方法,包括,
(Ⅰ)(A)用陶瓷或类似陶瓷的平面化涂层涂覆电子器件,方法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出。把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发掉,从而在电子器件上沉积下一预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,在200和1000℃之间的一温度上加热已涂器件,从而产生陶瓷或类似陶瓷的平面化涂层;
(Ⅱ)在已涂陶瓷或类似陶瓷的器件上涂加含氮硅碳涂层,做法是,在一反应罐中,在200和1000℃之间的一温度上,在有已涂陶瓷或类似陶瓷的器件存在的情况下,分解处于蒸汽相的六甲基乙硅氮烷,于是电子器件上形成了多层陶瓷或类似陶瓷的涂层。
8、根据权利要求4所述方法,其中硅涂层是用等离子增强化学蒸汽沉积来涂覆的。
9、根据权利要求4所述的方法,其中,硅涂层是用金属辅助化学蒸汽沉积来涂覆的。
10、根据权利要求5所述的方法,其中,含氮硅涂层是等离子增强化学蒸汽沉积来涂覆的。
11、根据权利要求5所述的方法,其中,含氮硅涂层是用金属辅助化学蒸汽沉积来涂覆的。
12、根据权利要求6所述的方法,其中,含碳硅涂层是用等离子增强化学蒸汽沉积来涂覆的。
13、根据权利要求6所述的方法,其中,含碳硅涂层是用金属辅助化学蒸汽沉积来涂覆的。
14、根据权利要求7所述的方法,其中,含氮硅碳涂层是用等离子增强化学蒸汽沉积来涂覆的。
15、根据权利要求7所述的方法,其中,含氮硅碳涂层是用金属辅助化学蒸汽沉积来涂覆的。
16、一种在基板上形成多层陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发,从而在电子器件上沉积下一预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,在200和1000℃之间的一温度上加热已涂器件,从而产生陶瓷或类似陶瓷的平面化涂层,以及:
(Ⅱ)在已涂陶瓷或类似陶瓷的器件上涂加由含氮硅材料组成的钝化涂层,方法是,用一溶剂稀释含氮硅预陶瓷聚合物,用稀释了的含氮硅预陶瓷聚合物溶液涂加到电子器件的平面化涂层上,干燥稀释的含氮硅预陶瓷聚合物,使溶剂挥发,从而在电子器件的平面化涂层上沉积下含氮硅预陶瓷涂层。在惰性气体或含氨气体存在的情况下,把已涂器件加热到200至1000℃之间的一个温度上,从而产生含氮硅陶瓷涂层。
(Ⅲ)在已涂陶瓷器件上涂加含硅涂层,做法是,在一反应罐中,在200和600℃之间的一温度上,在有已涂陶瓷或类似陶瓷的器件存在的情况下,分解处于蒸汽相的硅烷,卤硅烷,卤乙硅烷或其混合物,于是电子器件上就形成了多层陶瓷或类似陶瓷的涂层。
17、一种在基板上形成多层陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发,从而在电子器件上沉积下预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅或金属氧化物,做法是,在200和1000℃之间的一温度上加热已涂电子器件,从而产生陶瓷或类似陶瓷的平面化涂层;以及
(Ⅱ)在电子器件的平面化涂层上涂覆由含氮硅材料组成的钝化涂层,方法是,用一溶剂稀释含氮硅预陶瓷聚合物,用稀释了的含氮硅预陶瓷聚合物溶液涂加到已涂陶瓷或类似陶瓷的器件上,干燥稀释了的含氮硅预陶瓷聚合物溶液,使溶剂挥发,从而在电子器件平面化涂层上沉积下含氮硅预陶瓷涂层。在有惰性气体或含氨气体存在情况下,把已涂器件加热到200和1000℃之间的一温度上,从而产生含氮硅涂层;以及
(Ⅲ)在已涂器件上涂加含氮硅涂层,方法是在一反应罐中,在200和1000℃之间的一温度上,在有已涂器件存在情况下,分解处于蒸汽相中的硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物和氨,于是电子器件上形成了多层陶瓷或类似陶瓷的涂层。
18、一种在基板上形成多层陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发,从而在电子器件上沉积下一预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,把已涂器件加热到200和1000℃之间的一温度上,从而产生陶瓷或类似陶瓷的平面化涂层;
(Ⅱ)在电子器件的平面化涂层上涂加由含氮硅材料组成的钝化涂层,做法是,用一溶剂稀释含氮硅预陶瓷聚合物,用稀释了的含氮硅预陶瓷聚合物溶液涂覆到电子器件的平面化涂层上,干燥稀释了的含氮硅预陶瓷聚合物溶液,使溶剂挥发,从而在电子器件的平面化涂层上沉积下含氮硅预陶瓷涂层。在有惰性气体或含氨气体情况下,把已涂器件加热200和1000℃之间的一温度上,从而产生含氮硅陶瓷或类似陶瓷的涂层;以及
(Ⅲ)在已涂器件上涂覆含氮碳涂层,做法是在一反应罐中,在200和1000℃之间的一温度上,在有已涂器件存在的情况下,分解处于蒸汽相的硅烷,烷基硅烷,卤硅烷,卤乙硅烷,卤聚硅烷或其混合物和含一至六个碳原子的烷烃或烷基硅烷,于是电子器件上形成了多层陶瓷或类似陶瓷的涂层。
19、一种在基板上形成多层陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷聚合物溶液加到电子器件上;(B)干燥稀释了的预陶瓷聚合物溶液,使溶剂挥发,从而在电子器件上沉积下预陶瓷涂层,(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,把已涂器件加热至200和1000℃之间的一温度上,从而产生陶瓷或类似陶瓷的平面化涂层;以及
(Ⅱ)在电子器件的平面化涂层上涂加由含氮硅材料组成的钝化涂层,做法是,在一溶剂中稀释含氮硅预陶瓷聚合物,用稀释了的含氮硅预陶瓷聚合物溶液涂覆到已涂陶瓷或类似陶瓷的电子器件上,干燥稀释了的含氮硅预陶瓷聚合物溶液,使溶剂挥发,从而在电子器件的平面化涂层上沉积下含氮硅预陶瓷涂层,把已涂器件在有惰性气体或含氨气体情况下加热至200和1000℃之间的一温度上,从而产生含氮硅陶瓷或类似陶瓷的涂层;以及
(Ⅲ)在已涂器件上涂覆含氮硅碳涂层,做法是,在200和1000℃之间的一温度上,在有已涂陶瓷或类似陶瓷的器件存在的情况下,用六甲基乙硅氮烷的化学蒸汽沉积法,使电子器件上形成多层陶瓷或类似陶瓷的涂层。
20、一种在基板上形成多层陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是,用一溶剂稀释水解或部分水解的硅酸酯和金属氧化物前体的预涂层聚合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出,把稀释了的预陶瓷混合物溶液涂覆到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发,从而在电子器件上沉积下预陶瓷涂层;(C)使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,把已涂器件加热到200和1000℃之间的一温度上,从而产生陶瓷或类似陶瓷的平面化涂层;以及
(Ⅱ)在电子器件的平面化涂层上涂覆由含氮硅材料组成的钝化涂层,做法是,在一溶剂里稀释含氮硅预陶瓷聚合物,用稀释了的含氮硅预陶瓷聚合物溶液涂加到已涂陶瓷或类似陶瓷的器体上,干燥稀释了的含氮硅预陶瓷聚合物溶液,使溶剂挥发,从而在电子器件的平面化涂层上沉积下含氮硅预陶瓷涂层,在有惰性气体或含氨气体的条件下,把已涂器件加热到200和1000℃之间的一温度上,从而产生含氮硅陶瓷或类似陶瓷的钝化涂层;以及
(Ⅲ)在钝化涂层上涂覆含氮硅碳涂层,做法是,在200和1000℃之间的一温度上,在有已涂陶瓷或类似陶瓷的器件存在的情况下,用六甲基乙硅氮烷的等离子增强化学蒸汽沉积法,使电子器件上形成多层陶瓷或类似陶瓷的涂层。
21、一种在基板上形成双层陶瓷或类似陶瓷的涂层的方法,包括:
(Ⅰ)(A)用平面化涂层涂覆电子器件,方法是,用一溶剂稀释水解的或部分水解的硅酸酯和金属氧化物前体的预陶瓷混合物,金属氧化物前体从含有烷氧基铝,烷氧基钛和烷氧基锆这一组中选出。把稀释了的预陶瓷混合物溶液涂加到电子器件上;(B)干燥稀释了的预陶瓷混合物溶液,使溶剂挥发,从而在电子器件上沉积下预陶瓷涂层;(C使预陶瓷涂层陶瓷化成二氧化硅和金属氧化物,做法是,把已涂器件加热到200和1000℃之间的一温度上,从而产生陶瓷或类似陶瓷的平面化涂层;以及
(Ⅱ)在电子器件的平面化涂层上涂覆由含氮硅材料组成的钝化涂层,做法是,在一溶剂中稀释含氮硅预陶瓷聚合物,用已稀释的含氮硅预陶瓷聚合物涂加到已涂陶瓷或类似陶瓷的器件上,干燥稀释了的含氮硅预陶瓷聚合物溶液,使溶剂挥发,从而在电子器件的平面化涂层上沉积下含氮硅预陶瓷涂层,在有惰性气体或含氨气体情况下,把已涂器件加热到200和400℃之间的一温度上,以产生含氮硅钝化涂层,于是,在电子器件上形成了双层陶瓷或类似陶瓷的涂层。
22、一种用陶瓷或类似陶瓷的含氮硅材料涂覆基板的方法,其中上述方法包括下例步骤:
(1)用一溶剂稀释硅和含氮预陶瓷聚合物,该聚合物由环硅氮烷或环硅氮烷的混合物与含硅材料相接触而产生,含硅材料是从包括卤乙硅烷和卤硅烷这一组中选出;
(2)用稀释了的预陶瓷聚合物溶液涂加基板;
(3)在没有空气的情况下,干燥稀释了的预陶瓷聚合物溶液,使溶剂挥发,从而在基板上沉积下预陶瓷聚合物涂层;以及
(4)在没有空气的情况下,加热已涂基板,从而基板上产生出陶瓷或类似陶瓷的涂层。
23、按照权利要求22所述方法,其中,基板是电子器件。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US000,217 | 1987-01-02 | ||
US07/000,217 US4753856A (en) | 1987-01-02 | 1987-01-02 | Multilayer ceramic coatings from silicate esters and metal oxides |
Publications (2)
Publication Number | Publication Date |
---|---|
CN87107417A CN87107417A (zh) | 1988-08-17 |
CN1012494B true CN1012494B (zh) | 1991-05-01 |
Family
ID=21690450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN87107417A Expired CN1012494B (zh) | 1987-01-02 | 1987-12-29 | 硅酯和金属氧化物的多层陶瓷涂层 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4753856A (zh) |
EP (1) | EP0274274B1 (zh) |
JP (1) | JPH0642479B2 (zh) |
CN (1) | CN1012494B (zh) |
CA (1) | CA1329739C (zh) |
DE (1) | DE3789438T2 (zh) |
ES (1) | ES2005496A6 (zh) |
Families Citing this family (324)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5708252A (en) * | 1986-09-26 | 1998-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Excimer laser scanning system |
US6149988A (en) * | 1986-09-26 | 2000-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
JPS63195283A (ja) * | 1987-02-06 | 1988-08-12 | Sumitomo Electric Ind Ltd | セラミツクス被覆部材 |
CA1336149C (en) * | 1987-07-06 | 1995-07-04 | Saburo Tanaka | Superconducting thin film and a method for preparing the same |
DE3889989T2 (de) * | 1987-07-17 | 1994-12-01 | Sumitomo Electric Industries | Supraleitende Dünnschicht und Verfahren zu deren Herstellung. |
US6261856B1 (en) | 1987-09-16 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
US4983422A (en) * | 1988-03-11 | 1991-01-08 | Kaiser Aerotech | Process for forming aluminum oxide ceramic composites |
US5104636A (en) * | 1988-03-11 | 1992-04-14 | Kaiser Aerospace And Electronics Corporation | Method of making aluminum oxide precursors |
US4970097A (en) * | 1989-03-16 | 1990-11-13 | Owens-Corning Fiberglas Corporation | Method for forming abrasion resistant coating on fibrous glass substrate |
CA2027031A1 (en) * | 1989-10-18 | 1991-04-19 | Loren A. Haluska | Hermetic substrate coatings in an inert gas atmosphere |
US5318857A (en) * | 1989-11-06 | 1994-06-07 | Dow Corning Corporation | Low temperature ozonolysis of silicon and ceramic oxide precursor polymers to ceramic coatings |
US5395648A (en) * | 1989-11-09 | 1995-03-07 | Kaiser Aerospace And Electronics Corporation | Ceramic-ceramic composite prepregs and methods for their use and preparation |
US5100764A (en) * | 1989-12-26 | 1992-03-31 | Iowa State University Research Foundation, Inc. | Method of making patterned metal oxide films comprising a sol-gel of metal oxide and a photoactive compound |
US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
US5145714A (en) * | 1990-10-30 | 1992-09-08 | Mcnc | Metal-organic chemical vapor deposition for repairing broken lines in microelectronic packages |
IL106790A (en) * | 1992-09-01 | 1996-08-04 | Rosemount Inc | A capacitive pressure sensation consisting of the bracket and the process of creating it |
TW347149U (en) * | 1993-02-26 | 1998-12-01 | Dow Corning | Integrated circuits protected from the environment by ceramic and barrier metal layers |
US5438023A (en) * | 1994-03-11 | 1995-08-01 | Ramtron International Corporation | Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like |
US5508062A (en) * | 1994-12-02 | 1996-04-16 | Dow Corning Corporation | Method for forming an insoluble coating on a substrate |
EP0720223B1 (en) * | 1994-12-30 | 2003-03-26 | STMicroelectronics S.r.l. | Process for the production of a semiconductor device having better interface adhesion between dielectric layers |
US5753374A (en) * | 1995-11-27 | 1998-05-19 | Dow Corning Corporation | Protective electronic coating |
US5780163A (en) * | 1996-06-05 | 1998-07-14 | Dow Corning Corporation | Multilayer coating for microelectronic devices |
DE19843433A1 (de) * | 1998-09-22 | 2000-03-30 | Siemens Ag | Halbleiterchip und Halbleiterbauelement mit einem solchen Halbleiterchip |
US20060110424A1 (en) * | 2000-03-24 | 2006-05-25 | Lyles Mark B | Ceramic and metal compositions |
US20030104209A1 (en) * | 2001-11-30 | 2003-06-05 | Bellman Robert A. | Precursor and method of growing doped glass films |
JP4500961B2 (ja) * | 2004-06-07 | 2010-07-14 | 国立大学法人九州工業大学 | 薄膜形成方法 |
EP1884472B1 (en) * | 2005-05-27 | 2014-08-13 | Kirin Beer Kabushiki Kaisha | Apparatus and method for manufacturing gas barrier plastic container |
CN101636524B (zh) * | 2007-03-27 | 2012-01-04 | 财团法人电力中央研究所 | 防硫化腐蚀方法、耐硫化腐蚀性高温部件以及导热管的修补方法 |
DE102007030602A1 (de) * | 2007-06-28 | 2009-01-02 | Siemens Ag | Bauteil mit einer keramischen Schicht, in die Partikel eingelagert sind, und Verfahren zu dessen Herstellung |
JP5014263B2 (ja) * | 2008-06-06 | 2012-08-29 | 三菱電機株式会社 | 光起電力装置およびその製造方法 |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
KR101732187B1 (ko) * | 2009-09-03 | 2017-05-02 | 에이에스엠 저펜 가부시기가이샤 | 플라즈마 강화된 화학기상 증착법에 의해 규소-질소 결합을 갖는 등각성 유전체 막을 형성하는 방법 |
US9340880B2 (en) | 2009-10-27 | 2016-05-17 | Silcotek Corp. | Semiconductor fabrication process |
WO2012047945A2 (en) | 2010-10-05 | 2012-04-12 | Silcotek Corp. | Wear resistant coating, article, and method |
KR101911196B1 (ko) | 2009-10-27 | 2018-10-24 | 실코텍 코포레이션 | 화학적 증기 증착 코팅, 물품, 및 방법 |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US20150303317A1 (en) * | 2012-01-06 | 2015-10-22 | Hitachi Chemical Company, Ltd. | Semiconductor substrate provided with passivation film and production method, and photovoltaic cell element and production method therefor |
CN106935664A (zh) * | 2012-07-12 | 2017-07-07 | 日立化成株式会社 | 钝化层形成用组合物、半导体基板及制造方法、太阳能电池元件及制造方法、太阳能电池 |
JP6295953B2 (ja) * | 2012-07-19 | 2018-03-20 | 日立化成株式会社 | 太陽電池素子及びその製造方法、並びに太陽電池モジュール |
DE102012107440A1 (de) * | 2012-08-14 | 2014-05-15 | Hella Kgaa Hueck & Co. | Verfahren zur Erzeugung einer nicht-vollkeramischen Oberfläche . |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
JP2014072437A (ja) * | 2012-09-28 | 2014-04-21 | Hitachi Chemical Co Ltd | 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 |
JP2014072436A (ja) * | 2012-09-28 | 2014-04-21 | Hitachi Chemical Co Ltd | 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
EP2996819A1 (en) | 2013-05-14 | 2016-03-23 | Silcotek Corp. | Vapor phase treatment of amorphous carbon films with (perfluoro 1,1,2,2 tetrahydroalkyl)trialkoxysilane |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US11292924B2 (en) | 2014-04-08 | 2022-04-05 | Silcotek Corp. | Thermal chemical vapor deposition coated article and process |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9915001B2 (en) | 2014-09-03 | 2018-03-13 | Silcotek Corp. | Chemical vapor deposition process and coated article |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10316408B2 (en) | 2014-12-12 | 2019-06-11 | Silcotek Corp. | Delivery device, manufacturing system and process of manufacturing |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
WO2017040623A1 (en) | 2015-09-01 | 2017-03-09 | Silcotek Corp. | Thermal chemical vapor deposition coating |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10323321B1 (en) | 2016-01-08 | 2019-06-18 | Silcotek Corp. | Thermal chemical vapor deposition process and coated article |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
JP6725268B2 (ja) * | 2016-03-08 | 2020-07-15 | オリンパス株式会社 | インサート成形品、電気信号コネクタ、内視鏡及びインサート成形法 |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
US10487403B2 (en) | 2016-12-13 | 2019-11-26 | Silcotek Corp | Fluoro-containing thermal chemical vapor deposition process and article |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102657269B1 (ko) | 2018-02-14 | 2024-04-16 | 에이에스엠 아이피 홀딩 비.브이. | 주기적 증착 공정에 의해 기판 상에 루테늄-함유 막을 증착하는 방법 |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
JP2021172884A (ja) | 2020-04-24 | 2021-11-01 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4084021A (en) * | 1974-10-08 | 1978-04-11 | Minnesota Mining And Manufacturing Company | Method for rendering substrates resistant to abrasion |
JPS5617988A (en) * | 1979-07-24 | 1981-02-20 | Toshio Hirai | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
US4395438A (en) * | 1980-09-08 | 1983-07-26 | Amdahl Corporation | Low pressure chemical vapor deposition of silicon nitride films |
US4340619A (en) * | 1981-01-15 | 1982-07-20 | Dow Corning Corporation | Process for the preparation of poly(disilyl)silazane polymers and the polymers therefrom |
US4404153A (en) * | 1981-01-15 | 1983-09-13 | Dow Corning Corporation | Process for the preparation of poly(disilyl)silazane polymers and the polymers therefrom |
US4312970A (en) * | 1981-02-20 | 1982-01-26 | Dow Corning Corporation | Silazane polymers from {R'3 Si}2 NH and organochlorosilanes |
US4395460A (en) * | 1981-09-21 | 1983-07-26 | Dow Corning Corporation | Preparation of polysilazane polymers and the polymers therefrom |
JPS5886017A (ja) * | 1981-11-13 | 1983-05-23 | 日清製粉株式会社 | きのこの栽培用培養基 |
US4397828A (en) * | 1981-11-16 | 1983-08-09 | Massachusetts Institute Of Technology | Stable liquid polymeric precursor to silicon nitride and process |
JPS5958819A (ja) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | 薄膜形成方法 |
JPS59128281A (ja) * | 1982-12-29 | 1984-07-24 | 信越化学工業株式会社 | 炭化けい素被覆物の製造方法 |
US4543344A (en) * | 1983-11-28 | 1985-09-24 | Dow Corning Corporation | Silicon nitride-containing ceramic material prepared by pyrolysis of hydrosilazane polymers from (R3 Si)2 NH and HSiCl3 |
US4540803A (en) * | 1983-11-28 | 1985-09-10 | Dow Corning Corporation | Hydrosilazane polymers from [R3 Si]2 NH and HSiCl3 |
US4482669A (en) * | 1984-01-19 | 1984-11-13 | Massachusetts Institute Of Technology | Preceramic organosilazane polymers |
DE3407087C2 (de) * | 1984-02-27 | 1994-07-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München | Verfahren und Lack zur Herstellung von kratzfesten Beschichtungen |
US4482689A (en) * | 1984-03-12 | 1984-11-13 | Dow Corning Corporation | Process for the preparation of polymetallo(disily)silazane polymers and the polymers therefrom |
US4528038A (en) * | 1984-06-28 | 1985-07-09 | General Electric Company | Organoaluminosiloxane coating compositions and coated substrate |
US4535007A (en) * | 1984-07-02 | 1985-08-13 | Dow Corning Corporation | Silicon nitride-containing ceramics |
JPS61174128A (ja) * | 1985-01-28 | 1986-08-05 | Sumitomo Electric Ind Ltd | レンズ成形用型 |
FR2579602B1 (fr) * | 1985-03-29 | 1987-06-05 | Rhone Poulenc Rech | Composition polysilazane pouvant reticuler en presence d'un metal ou d'un compose metallique catalysant la reaction d'hydrosilylation |
US4761389A (en) * | 1985-04-01 | 1988-08-02 | Dow Corning Corporation | Process for preparing ceramic materials with reduced carbon levels |
US4696834A (en) * | 1986-02-28 | 1987-09-29 | Dow Corning Corporation | Silicon-containing coatings and a method for their preparation |
US4745205A (en) * | 1986-11-03 | 1988-05-17 | Dow Corning Corporation | Novel preceramic polymers derived from cyclic silazanes and halogenated disilanes and a method for their preparation |
-
1987
- 1987-01-02 US US07/000,217 patent/US4753856A/en not_active Expired - Lifetime
- 1987-12-14 CA CA000554210A patent/CA1329739C/en not_active Expired - Fee Related
- 1987-12-28 JP JP62330346A patent/JPH0642479B2/ja not_active Expired - Lifetime
- 1987-12-29 CN CN87107417A patent/CN1012494B/zh not_active Expired
- 1987-12-29 DE DE3789438T patent/DE3789438T2/de not_active Expired - Fee Related
- 1987-12-29 EP EP87311481A patent/EP0274274B1/en not_active Expired - Lifetime
- 1987-12-30 ES ES8703757A patent/ES2005496A6/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0274274B1 (en) | 1994-03-23 |
DE3789438D1 (de) | 1994-04-28 |
ES2005496A6 (es) | 1989-03-01 |
EP0274274A2 (en) | 1988-07-13 |
JPH0642479B2 (ja) | 1994-06-01 |
EP0274274A3 (en) | 1988-12-07 |
JPS63178532A (ja) | 1988-07-22 |
CA1329739C (en) | 1994-05-24 |
CN87107417A (zh) | 1988-08-17 |
DE3789438T2 (de) | 1994-10-06 |
US4753856A (en) | 1988-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1012494B (zh) | 硅酯和金属氧化物的多层陶瓷涂层 | |
US5380567A (en) | Hermetic coatings by heating hydrogen silsesquinoxane resin in an inert atmosphere | |
KR950011561B1 (ko) | 백금 또는 로듐 촉매 작용시킨 수소 실세스퀴옥산 수지 및 금속 산화물로부터의 다층 세라믹 피막의 형성방법 및 이로써 형성된 다층 세라믹 피막 | |
US4749631A (en) | Multilayer ceramics from silicate esters | |
KR950014273B1 (ko) | 수소 실세스퀴옥산으로부터 다층 세라믹 피막을 형성시키는 방법 | |
US5008320A (en) | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides | |
KR950014274B1 (ko) | 금속 산화물로부터 전자 장치 보호용 다층 세라믹피막의 형성방법 | |
EP0270229B1 (en) | Platinum and rhodium catalysis of low temperature formation multilayer ceramics | |
US4808653A (en) | Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors | |
US5436029A (en) | Curing silicon hydride containing materials by exposure to nitrous oxide | |
CA1323529C (en) | Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia | |
US4898907A (en) | Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin | |
EP0442632A2 (en) | Coatings for microelectronic devices and substrates | |
US4997482A (en) | Coating composition containing hydrolyzed silicate esters and other metal oxide precursors | |
EP0270220B1 (en) | Sin-containing coatings for electronic devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C13 | Decision | ||
GR02 | Examined patent application | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C15 | Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993) | ||
OR01 | Other related matters | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |