CN101211931B - 半导体器件及电子设备 - Google Patents

半导体器件及电子设备 Download PDF

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Publication number
CN101211931B
CN101211931B CN2007101608495A CN200710160849A CN101211931B CN 101211931 B CN101211931 B CN 101211931B CN 2007101608495 A CN2007101608495 A CN 2007101608495A CN 200710160849 A CN200710160849 A CN 200710160849A CN 101211931 B CN101211931 B CN 101211931B
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China
Prior art keywords
terminal
photoelectric conversion
film
semiconductor device
conductive film
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Expired - Fee Related
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CN2007101608495A
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English (en)
Chinese (zh)
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CN101211931A (zh
Inventor
广濑笃志
肉户英明
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN101211931A publication Critical patent/CN101211931A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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CN2007101608495A 2006-12-27 2007-12-27 半导体器件及电子设备 Expired - Fee Related CN101211931B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006351877 2006-12-27
JP2006351877 2006-12-27
JP2006-351877 2006-12-27

Publications (2)

Publication Number Publication Date
CN101211931A CN101211931A (zh) 2008-07-02
CN101211931B true CN101211931B (zh) 2011-04-13

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CN2007101608495A Expired - Fee Related CN101211931B (zh) 2006-12-27 2007-12-27 半导体器件及电子设备

Country Status (4)

Country Link
US (1) US7923800B2 (https=)
JP (1) JP5070030B2 (https=)
KR (1) KR101369863B1 (https=)
CN (1) CN101211931B (https=)

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US8115160B2 (en) * 2008-03-14 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Protection circuit and photoelectric conversion device
JP5388632B2 (ja) 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
TWI493685B (zh) 2012-02-10 2015-07-21 E Ink Holdings Inc 主動陣列基板上之靜電防護結構
EP2651035B1 (en) * 2012-04-11 2017-05-03 Imec Low voltage drop unidirectional smart bypass elements
JP2015149414A (ja) * 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
CN105304656B (zh) * 2014-06-23 2018-06-22 上海箩箕技术有限公司 光电传感器
CN104637970B (zh) * 2015-03-03 2018-03-06 京东方科技集团股份有限公司 阵列基板及其制作方法、x射线平板探测器、摄像系统
CN110649068A (zh) * 2019-09-02 2020-01-03 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制备方法
CN110895374A (zh) * 2019-11-26 2020-03-20 上海天马微电子有限公司 显示面板及显示装置
KR20220033596A (ko) * 2020-09-08 2022-03-17 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 이의 제조 방법

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Also Published As

Publication number Publication date
JP2008182214A (ja) 2008-08-07
JP5070030B2 (ja) 2012-11-07
KR101369863B1 (ko) 2014-03-05
CN101211931A (zh) 2008-07-02
US7923800B2 (en) 2011-04-12
KR20080061291A (ko) 2008-07-02
US20080156368A1 (en) 2008-07-03

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