CN101154467B - 熔丝读出电路 - Google Patents

熔丝读出电路 Download PDF

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Publication number
CN101154467B
CN101154467B CN2007101487819A CN200710148781A CN101154467B CN 101154467 B CN101154467 B CN 101154467B CN 2007101487819 A CN2007101487819 A CN 2007101487819A CN 200710148781 A CN200710148781 A CN 200710148781A CN 101154467 B CN101154467 B CN 101154467B
Authority
CN
China
Prior art keywords
circuit
fuse
mentioned
bit
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101487819A
Other languages
English (en)
Chinese (zh)
Other versions
CN101154467A (zh
Inventor
松尾雄一
仲井尊久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
System Solutions Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Semiconductor Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN101154467A publication Critical patent/CN101154467A/zh
Application granted granted Critical
Publication of CN101154467B publication Critical patent/CN101154467B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters

Landscapes

  • Analogue/Digital Conversion (AREA)
  • Read Only Memory (AREA)
CN2007101487819A 2006-09-28 2007-09-11 熔丝读出电路 Expired - Fee Related CN101154467B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006263957 2006-09-28
JP2006263957A JP2008084453A (ja) 2006-09-28 2006-09-28 ヒューズ読み出し回路
JP2006-263957 2006-09-28

Publications (2)

Publication Number Publication Date
CN101154467A CN101154467A (zh) 2008-04-02
CN101154467B true CN101154467B (zh) 2012-10-17

Family

ID=39256043

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101487819A Expired - Fee Related CN101154467B (zh) 2006-09-28 2007-09-11 熔丝读出电路

Country Status (5)

Country Link
US (1) US7782648B2 (enExample)
JP (1) JP2008084453A (enExample)
KR (1) KR20080029853A (enExample)
CN (1) CN101154467B (enExample)
TW (1) TWI346209B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5571303B2 (ja) * 2008-10-31 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP5511489B2 (ja) * 2010-04-27 2014-06-04 ラピスセミコンダクタ株式会社 半導体不揮発性記憶装置
CN101944387A (zh) * 2010-09-03 2011-01-12 深圳市国微电子股份有限公司 一种分段式反熔丝编程方法、装置及编程器
US20120150955A1 (en) * 2010-12-10 2012-06-14 Erick Tseng Contact Resolution Using Social Graph Information
JP2015130437A (ja) * 2014-01-08 2015-07-16 ソニー株式会社 半導体装置およびデータ書き込み方法
CA2951454A1 (en) * 2015-12-16 2017-06-16 Wal-Mart Stores, Inc. Publisher-subscriber queue provisioning
KR102496506B1 (ko) * 2016-10-14 2023-02-06 삼성전자주식회사 복수의 퓨즈 비트들을 독출하는 오티피 메모리 장치
CN109147857B (zh) 2017-06-15 2020-11-13 华邦电子股份有限公司 熔丝阵列和存储器装置
CN113948144B (zh) * 2020-07-16 2023-09-12 长鑫存储技术有限公司 反熔丝存储单元状态检测电路及存储器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1641794A (zh) * 2004-01-07 2005-07-20 松下电器产业株式会社 半导体装置
US20060023549A1 (en) * 2004-08-02 2006-02-02 Jinshu Son Fuse data storage system using core memory
CN1825486A (zh) * 2005-01-28 2006-08-30 三星电子株式会社 闪存单元熔丝电路和熔断闪存单元的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611319A (en) * 1969-03-06 1971-10-05 Teledyne Inc Electrically alterable read only memory
US4307379A (en) * 1977-11-10 1981-12-22 Raytheon Company Integrated circuit component
JPS63113896A (ja) * 1986-10-30 1988-05-18 Mitsubishi Electric Corp 不揮発性半導体装置
JPH05298894A (ja) * 1992-04-16 1993-11-12 Sharp Corp 不揮発性メモリのデータ書込読出制御装置
JPH0917964A (ja) * 1995-06-30 1997-01-17 Seiko Epson Corp 半導体装置
US5646896A (en) * 1995-10-31 1997-07-08 Hyundai Electronics America Memory device with reduced number of fuses
JPH1131398A (ja) * 1997-07-08 1999-02-02 Hitachi Ltd 半導体集積回路装置
JP2001273781A (ja) * 2000-03-27 2001-10-05 Toshiba Corp 半導体集積回路およびその初期化情報読み出し方法
US6373771B1 (en) * 2001-01-17 2002-04-16 International Business Machines Corporation Integrated fuse latch and shift register for efficient programming and fuse readout
JP2006072860A (ja) 2004-09-03 2006-03-16 Rohm Co Ltd 負荷駆動用半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1641794A (zh) * 2004-01-07 2005-07-20 松下电器产业株式会社 半导体装置
US20060023549A1 (en) * 2004-08-02 2006-02-02 Jinshu Son Fuse data storage system using core memory
CN1825486A (zh) * 2005-01-28 2006-08-30 三星电子株式会社 闪存单元熔丝电路和熔断闪存单元的方法

Also Published As

Publication number Publication date
KR20080029853A (ko) 2008-04-03
US7782648B2 (en) 2010-08-24
JP2008084453A (ja) 2008-04-10
TW200817694A (en) 2008-04-16
CN101154467A (zh) 2008-04-02
TWI346209B (en) 2011-08-01
US20090003093A1 (en) 2009-01-01

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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121017

Termination date: 20210911