KR20080029853A - 퓨즈 읽어내기 회로 - Google Patents

퓨즈 읽어내기 회로 Download PDF

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Publication number
KR20080029853A
KR20080029853A KR1020070097454A KR20070097454A KR20080029853A KR 20080029853 A KR20080029853 A KR 20080029853A KR 1020070097454 A KR1020070097454 A KR 1020070097454A KR 20070097454 A KR20070097454 A KR 20070097454A KR 20080029853 A KR20080029853 A KR 20080029853A
Authority
KR
South Korea
Prior art keywords
circuit
fuse
data
bits
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020070097454A
Other languages
English (en)
Korean (ko)
Inventor
유이찌 마쯔오
다까히사 나까이
Original Assignee
산요덴키가부시키가이샤
산요 세미컨덕터 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 산요덴키가부시키가이샤, 산요 세미컨덕터 컴퍼니 리미티드 filed Critical 산요덴키가부시키가이샤
Publication of KR20080029853A publication Critical patent/KR20080029853A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters

Landscapes

  • Analogue/Digital Conversion (AREA)
  • Read Only Memory (AREA)
KR1020070097454A 2006-09-28 2007-09-27 퓨즈 읽어내기 회로 Ceased KR20080029853A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00263957 2006-09-28
JP2006263957A JP2008084453A (ja) 2006-09-28 2006-09-28 ヒューズ読み出し回路

Publications (1)

Publication Number Publication Date
KR20080029853A true KR20080029853A (ko) 2008-04-03

Family

ID=39256043

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070097454A Ceased KR20080029853A (ko) 2006-09-28 2007-09-27 퓨즈 읽어내기 회로

Country Status (5)

Country Link
US (1) US7782648B2 (enExample)
JP (1) JP2008084453A (enExample)
KR (1) KR20080029853A (enExample)
CN (1) CN101154467B (enExample)
TW (1) TWI346209B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5571303B2 (ja) * 2008-10-31 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP5511489B2 (ja) * 2010-04-27 2014-06-04 ラピスセミコンダクタ株式会社 半導体不揮発性記憶装置
CN101944387A (zh) * 2010-09-03 2011-01-12 深圳市国微电子股份有限公司 一种分段式反熔丝编程方法、装置及编程器
US20120150955A1 (en) * 2010-12-10 2012-06-14 Erick Tseng Contact Resolution Using Social Graph Information
JP2015130437A (ja) * 2014-01-08 2015-07-16 ソニー株式会社 半導体装置およびデータ書き込み方法
CA2951454A1 (en) * 2015-12-16 2017-06-16 Wal-Mart Stores, Inc. Publisher-subscriber queue provisioning
KR102496506B1 (ko) * 2016-10-14 2023-02-06 삼성전자주식회사 복수의 퓨즈 비트들을 독출하는 오티피 메모리 장치
CN109147857B (zh) 2017-06-15 2020-11-13 华邦电子股份有限公司 熔丝阵列和存储器装置
CN113948144B (zh) * 2020-07-16 2023-09-12 长鑫存储技术有限公司 反熔丝存储单元状态检测电路及存储器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611319A (en) * 1969-03-06 1971-10-05 Teledyne Inc Electrically alterable read only memory
US4307379A (en) * 1977-11-10 1981-12-22 Raytheon Company Integrated circuit component
JPS63113896A (ja) * 1986-10-30 1988-05-18 Mitsubishi Electric Corp 不揮発性半導体装置
JPH05298894A (ja) * 1992-04-16 1993-11-12 Sharp Corp 不揮発性メモリのデータ書込読出制御装置
JPH0917964A (ja) * 1995-06-30 1997-01-17 Seiko Epson Corp 半導体装置
US5646896A (en) * 1995-10-31 1997-07-08 Hyundai Electronics America Memory device with reduced number of fuses
JPH1131398A (ja) * 1997-07-08 1999-02-02 Hitachi Ltd 半導体集積回路装置
JP2001273781A (ja) * 2000-03-27 2001-10-05 Toshiba Corp 半導体集積回路およびその初期化情報読み出し方法
US6373771B1 (en) * 2001-01-17 2002-04-16 International Business Machines Corporation Integrated fuse latch and shift register for efficient programming and fuse readout
JP2005196875A (ja) 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd 半導体装置
US7102950B2 (en) * 2004-08-02 2006-09-05 Atmel Corporation Fuse data storage system using core memory
JP2006072860A (ja) 2004-09-03 2006-03-16 Rohm Co Ltd 負荷駆動用半導体装置
KR100583278B1 (ko) 2005-01-28 2006-05-25 삼성전자주식회사 플래쉬 셀 퓨즈 회로 및 플래쉬 셀 퓨징 방법

Also Published As

Publication number Publication date
CN101154467B (zh) 2012-10-17
TWI346209B (en) 2011-08-01
US20090003093A1 (en) 2009-01-01
TW200817694A (en) 2008-04-16
CN101154467A (zh) 2008-04-02
JP2008084453A (ja) 2008-04-10
US7782648B2 (en) 2010-08-24

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20070927

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20120403

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20070927

Comment text: Patent Application

PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20130401

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20131018

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20130401

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I