TWI346209B - Fuse reading out circuit - Google Patents

Fuse reading out circuit

Info

Publication number
TWI346209B
TWI346209B TW096135871A TW96135871A TWI346209B TW I346209 B TWI346209 B TW I346209B TW 096135871 A TW096135871 A TW 096135871A TW 96135871 A TW96135871 A TW 96135871A TW I346209 B TWI346209 B TW I346209B
Authority
TW
Taiwan
Prior art keywords
reading out
out circuit
fuse reading
fuse
circuit
Prior art date
Application number
TW096135871A
Other languages
English (en)
Other versions
TW200817694A (en
Inventor
Yuichi Matsuo
Takahisa Nakai
Original Assignee
Sanyo Electric Co
Sanyo Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co, Sanyo Semiconductor Co Ltd filed Critical Sanyo Electric Co
Publication of TW200817694A publication Critical patent/TW200817694A/zh
Application granted granted Critical
Publication of TWI346209B publication Critical patent/TWI346209B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
TW096135871A 2006-09-28 2007-09-27 Fuse reading out circuit TWI346209B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006263957A JP2008084453A (ja) 2006-09-28 2006-09-28 ヒューズ読み出し回路

Publications (2)

Publication Number Publication Date
TW200817694A TW200817694A (en) 2008-04-16
TWI346209B true TWI346209B (en) 2011-08-01

Family

ID=39256043

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135871A TWI346209B (en) 2006-09-28 2007-09-27 Fuse reading out circuit

Country Status (5)

Country Link
US (1) US7782648B2 (zh)
JP (1) JP2008084453A (zh)
KR (1) KR20080029853A (zh)
CN (1) CN101154467B (zh)
TW (1) TWI346209B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5571303B2 (ja) * 2008-10-31 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP5511489B2 (ja) * 2010-04-27 2014-06-04 ラピスセミコンダクタ株式会社 半導体不揮発性記憶装置
CN101944387A (zh) * 2010-09-03 2011-01-12 深圳市国微电子股份有限公司 一种分段式反熔丝编程方法、装置及编程器
US20120150955A1 (en) * 2010-12-10 2012-06-14 Erick Tseng Contact Resolution Using Social Graph Information
JP2015130437A (ja) * 2014-01-08 2015-07-16 ソニー株式会社 半導体装置およびデータ書き込み方法
CA2951454A1 (en) * 2015-12-16 2017-06-16 Wal-Mart Stores, Inc. Publisher-subscriber queue provisioning
KR102496506B1 (ko) * 2016-10-14 2023-02-06 삼성전자주식회사 복수의 퓨즈 비트들을 독출하는 오티피 메모리 장치
CN109147857B (zh) 2017-06-15 2020-11-13 华邦电子股份有限公司 熔丝阵列和存储器装置
CN113948144B (zh) * 2020-07-16 2023-09-12 长鑫存储技术有限公司 反熔丝存储单元状态检测电路及存储器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611319A (en) * 1969-03-06 1971-10-05 Teledyne Inc Electrically alterable read only memory
US4307379A (en) * 1977-11-10 1981-12-22 Raytheon Company Integrated circuit component
JPS63113896A (ja) * 1986-10-30 1988-05-18 Mitsubishi Electric Corp 不揮発性半導体装置
JPH05298894A (ja) * 1992-04-16 1993-11-12 Sharp Corp 不揮発性メモリのデータ書込読出制御装置
JPH0917964A (ja) * 1995-06-30 1997-01-17 Seiko Epson Corp 半導体装置
US5646896A (en) * 1995-10-31 1997-07-08 Hyundai Electronics America Memory device with reduced number of fuses
JPH1131398A (ja) * 1997-07-08 1999-02-02 Hitachi Ltd 半導体集積回路装置
JP2001273781A (ja) * 2000-03-27 2001-10-05 Toshiba Corp 半導体集積回路およびその初期化情報読み出し方法
US6373771B1 (en) * 2001-01-17 2002-04-16 International Business Machines Corporation Integrated fuse latch and shift register for efficient programming and fuse readout
JP2005196875A (ja) * 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd 半導体装置
US7102950B2 (en) * 2004-08-02 2006-09-05 Atmel Corporation Fuse data storage system using core memory
JP2006072860A (ja) 2004-09-03 2006-03-16 Rohm Co Ltd 負荷駆動用半導体装置
KR100583278B1 (ko) * 2005-01-28 2006-05-25 삼성전자주식회사 플래쉬 셀 퓨즈 회로 및 플래쉬 셀 퓨징 방법

Also Published As

Publication number Publication date
CN101154467B (zh) 2012-10-17
CN101154467A (zh) 2008-04-02
TW200817694A (en) 2008-04-16
US20090003093A1 (en) 2009-01-01
US7782648B2 (en) 2010-08-24
JP2008084453A (ja) 2008-04-10
KR20080029853A (ko) 2008-04-03

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees