CN101121866A - 用于晶片研磨的抑制翘曲的压敏粘合片 - Google Patents
用于晶片研磨的抑制翘曲的压敏粘合片 Download PDFInfo
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- CN101121866A CN101121866A CNA2007101408361A CN200710140836A CN101121866A CN 101121866 A CN101121866 A CN 101121866A CN A2007101408361 A CNA2007101408361 A CN A2007101408361A CN 200710140836 A CN200710140836 A CN 200710140836A CN 101121866 A CN101121866 A CN 101121866A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
本发明涉及一种用于半导体晶片加工的压敏粘合片,其包括基材和布置在该基材上的压敏粘合剂层,所述压敏粘合片或所述基材在60℃下静置保持10分钟后,具有2%或更低的热收缩比。该压敏粘合片优选在压敏粘合片的硅晶片应用测试中具有2%或更低的伸长度。根据该压敏粘合片,可以将半导体晶片的背面研磨至非常小的厚度,而不会使所述晶片弯曲。
Description
技术领域
本发明涉及用于半导体晶片加工的压敏粘合片。更特别地,本发明涉及适用于将半导体晶片研磨至厚度非常小的半导体晶片加工的压敏粘合片。
背景技术
近年来推广多种封装和IC卡,希望包含半导体晶片的电子部件进一步降低厚度。因此需要将已经为约350μm的半导体芯片的厚度降低至75-150μm或更低。此外,为了改进生产率,正在研究使用甚至更大的晶片。
在半导体晶片生产中,已经采用在形成电路图形后将晶片背面进行研磨的技术。在该加工过程中,将压敏粘合片施加至所述电路表面上以保护该电路表面和固定所述晶片,然后研磨该晶片的背面。通常,通过用本申请中使用的压敏粘合剂涂布由乙烯/醋酸乙烯酯共聚物、聚乙烯等制成的柔性基材得到压敏粘合片。然而,一直存在下列问题。当使用采用了这样特定柔性基材的压敏粘合片时,在其应用期间施加的拉力积累为残余应力。此外,由于在所述晶片背面研磨步骤中和在之后被称为干磨光或CMP的加工步骤中产生的热量导致所述压敏粘合片或主要是所述基材热收缩,并且该收缩产生内应力。在将大直径晶片研磨至厚度非常小的情况下,在所述压敏粘合片中产生的残余应力和应力变得高于所述晶片的强度,并且消除所述残余应力的力导致所述晶片翘曲(弯曲)。
因此,正在研究使用刚性基材作为用于保护超薄型晶片或大直径晶片的压敏粘合片的基材。然而,使用刚性基材的压敏粘合片具有的缺陷为,在从晶片剥离该粘合片时,因为所述基材的刚性,用于所述剥离而施加的力被转移到晶片上,并且这可能使由于研磨至非常小的厚度而已经变得易碎的晶片破裂。此外,使用具有刚性基材的压敏粘合片在应用带材期间在带材切割中易于增加切割器磨损,并且因此难以保持切割质量。结果,在将半导体晶片研磨至厚度非常小的过程中存在易于出现晶片破裂的问题。
在JP-A-2000-150432中,已经提出一种压敏粘合片,其在拉伸测试中,在1分钟后,具有在10%伸长率下40%或更高的应力松弛比,这种压敏粘合片作为消除所述问题并适用于研磨半导体晶片至厚度非常小的压敏粘合片。然而,该压敏粘合片具有生产构成所述基材的材料的步骤和生产所述基材膜的步骤复杂的缺点,结果,完成的压敏粘合片非常昂贵。此外,尽管该压敏粘合片在用作用于大直径半导体晶片的背面研磨的压敏粘合片时具有优异的性能,但该性能并不总是最佳。
发明内容
本发明的目的是以低成本通过简单生产步骤提供一种半导体晶片加工用压敏粘合片,其可以固定大直径晶片,并能够使其被研磨至甚至非常小的厚度,而不会在半导体晶片背面抛光步骤和后处理步骤中使所述晶片弯曲。
本发明人进行了深入研究,以解决上述问题。结果,本发明人发现在半导体晶片背面研磨步骤中晶片弯曲的发生率主要与半导体晶片加工用压敏粘合片的四种性能相关,即热收缩比、在片材伸长中的应力、应力松弛比和在应用至被粘物中的伸长度。此外,本发明人发现可以通过将这些性能中的至少一种调节在适当的范围中而抑制晶片弯曲。因此完成了本发明。
发明详述
本发明提供了一种半导体晶片加工用压敏粘合片,其包含基材和布置在该基材上的压敏粘合剂层,所述压敏粘合片或所述基材在60℃下静置10分钟后具有2%或更低的热收缩比。所述压敏粘合片在压敏粘合片的硅晶片应用测试中理想地具有2%或更低的伸长度。
本发明进一步提供了一种半导体晶片加工用的压敏粘合片,其包含基材和布置在该基材上的压敏粘合剂层,该压敏粘合片在拉伸测试中伸长状态开始后1分钟时,在2%伸长率下的应力松弛比为20%或更高。该压敏粘合片在伸长状态开始后10分钟时,理想地在2%伸长率下的应力松弛比为25%或更高。
本发明进一步提供了一种半导体晶片加工用压敏粘合片,其包含基材和布置在该基材上的压敏粘合剂层,在拉伸测试中,该压敏粘合片在2%伸长后即刻每单位面积的应力为4.5N/20mm2。
本发明进一步提供了一种半导体晶片加工用压敏粘合片,其包含基材和布置在该基材上的压敏粘合剂层,在该压敏粘合片的硅晶片应用测试中,该压敏粘合片具有2%或更低的伸长度。
所述基材优选为由两层或更多不同材料制成的层构成的层压物。该层压物优选包含两层,其每一层由聚烯烃树脂制成,并具有不同的热收缩比。
本发明的半导体晶片加工用压敏粘合片适合在半导体晶片的背面研磨中用作表面保护片材。
根据本发明的半导体晶片加工用压敏粘合片,可以将半导体晶片的背面研磨至非常小的厚度,而不会使所述晶片弯曲。此外,可以低成本容易地生产本发明的半导体晶片加工用压敏粘合片。当将任何压敏粘合片用于研磨大直径晶片至非常小的厚度时,可以进行该操作而不会使所述晶片弯曲。因此,本发明的半导体晶片加工用压敏粘合片的使用改进了进行所述半导体晶片的背面研磨的生产率。
在一种本发明半导体晶片加工用压敏粘合片中,在60℃下静置10分钟后,所述压敏粘合片或基材具有2%或更低、优选1.5%或更低、更优选1.0%或更低的热收缩比。当所述压敏粘合片或基材的热收缩比在该范围之内,并且该压敏粘合片在例如半导体晶片背面研磨步骤中用作背面研磨片材时,则由在背面研磨中或在之后的加工步骤中产生热量导致的在该压敏粘合片中产生的内应力(残余应力)极其低。因此,通过背面研磨步骤,所述压敏粘合片没有弯曲,并且可以保持所述半导体晶片的平坦性。以如下方式测定热收缩比。将压敏粘合片或基材切成规定尺寸。用测径规准确地测量机器方向尺寸的初始值A和横向方向尺寸的初始值A′。将样品在60℃环境中静置10分钟。其后,分别测量在热收缩后机器方向尺寸B和在热收缩后横向方向尺寸B′。使用如下公式,分别计算机器方向热收缩度C和横向方向热收缩度C′。C和C′中较大的一个定义为所述压敏粘合片或基材的热收缩比。
C(%)=(A-B)/A×100
C’(%)=(A’-B’)/A’×100
通过选择所述基材和压敏粘合剂的种类和其组合,可以调节所述压敏粘合片或基材的热收缩比在该范围之内。
本发明的另一种压敏粘合片具有优异的应力消除性能。具体地,在拉伸测试中,在伸长状态开始后1分钟时,该压敏粘合片在2%伸长率下的应力松弛比为20%或更高、优选30%或更高、更优选50%或更高。在伸长状态开始后10分钟时,测得在2%伸长率下的应力松弛比可以为25%或更高、优选30%或更高、更优选50%或更高。当所述压敏粘合片的应力松弛比在该范围内时,在施加至被粘物后所述应力松弛比极低。因此,即使在将作为被粘物的半导体晶片研磨至75-150μm的厚度或甚至更小的厚度时,该压敏粘合片仍可以保持所述半导体晶片而不会使它弯曲。以如下方式计算应力松弛比。以200mm/min的速度拉伸具有指定长度的压敏粘合片样品以测量在2%伸长率下的应力K和在伸长停止后1分钟时的应力L。然后,以(K-L)/K×100(%)计算应力松弛比。通过选择所述基材和压敏粘合剂的种类和其组合,可以调节所述压敏粘合片的应力松弛比在该范围之内。
本发明另一种压敏粘合片在2%伸长后即刻的每单位面积的应力为4.5N/mm2或更低、优选3.5N/mm2或更低、更优选3.0N/mm2或更低。当所述压敏粘合片在所述伸长后即刻的每单位面积的应力在该范围内时,可以防止作为被粘物的半导体晶片发生由于应用产生的拉力而导致的翘曲(弯曲)。以如下方式计算伸长后即刻的每单位面积的应力。将具有指定长度的压敏粘合片切成宽度为15mm。在室温和200mm/min速度下将该样品拉伸2%,并且在该拉伸后立即测量应力。使用压敏粘合片或基材在2%伸长率下的应力A和总厚度B(mm),以A/(15×B)(N/mm2)计算伸长后即刻每单位面积的应力。在用隔离物等覆盖所述压敏粘合片的压敏粘合剂侧的情况下,在已经除去隔离物的样品上进行测量。通过选择所述基材和压敏粘合剂的种类和其组合,可以调节所述压敏粘合片在2%伸长后即刻每单位面积应力在该范围之内。
本发明的另一种压敏粘合片在硅晶片应用测试中,具有2%或更低、优选1.5%或更低和更优选1.0%或更低的伸长度。具有在该范围内伸长度和具有在应用中不伸长的性能的本发明该压敏粘合片在带材应用的步骤中几乎没有内应力。因此该压敏粘合片具有非常低的残余应力。因此,即使在将作为被粘物的半导体晶片研磨至极其小的厚度时,它也不弯曲(翘曲)。以如下方式测定伸长度。用测径规准确地测量切成规定尺寸的压敏粘合片的机器方向尺寸α和横向方向尺寸α′。以10厘米/秒的速度,用2-kg橡胶辊将该压敏粘合片施加至300mm硅晶片上,其中不施加拉力。其后,测量施加的压敏粘合片的机器方向尺寸β和横向方向尺寸β′。使用如下公式计算机器方向伸长度γ和横向方向伸长度γ′。
γ(%)=(β-α)/α×100(%)
γ′(%)=(β′-α′)/α′×100(%)
将机器方向伸长度的值γ和横向方向伸长度的值γ′中较大的一个作为所述压敏粘合片的伸长度。在用隔离物等覆盖压敏粘合片的压敏粘合剂侧的情况下,在除去隔离物等后,测量施加压敏粘合片之前的尺寸。通过选择基材和压敏粘合剂的种类和其组合,可以调节所述压敏粘合片在硅晶片施加测试中的伸长度在该范围之内。
用于半导体晶片背面研磨步骤的压敏粘合片出现弯曲(翘曲)的发生率与如上所述的热收缩比、伸长后应力松弛比、在伸长中每单位面积应力和在应用中伸长度密切相关。尽管只要这些性能的任何一种在该上述范围内,就可以显著抑制压敏粘合片的翘曲,但更优选两种或更多种的这些性能在上述各自范围内。特别地,对于抑制半导体晶片背面研磨步骤中翘曲重要的是在60℃静置10分钟后的热收缩比为2%或更低。因此,在60℃静置10分钟后热收缩比为2%或更低、并且在伸长状态开始后1分钟时在2%伸长率下应力松弛比为20%或更高的压敏粘合片,以及在60℃静置10分钟后热收缩比为2%或更低、并且在2%伸长后每单位面积应力为4.5N/20mm2的压敏粘合片,以及在60℃静置10分钟后热收缩比为2%或更低、并且在应用中伸长度为2%或更低的压敏粘合片等适合用作在半导体晶片的背面研磨中的表面保护片材。全部热收缩比、伸长后应力松弛比、伸长中每单位面积应力和应用至硅晶片中伸长度都在各自范围内的压敏粘合片是特别优选的用作半导体晶片的背面研磨中的表面保护片材的压敏粘合片。
压敏粘合剂
构成本发明每种压敏粘合片的压敏粘合剂层的压敏粘合剂没有特别限定,只要得到的压敏粘合片满足上述性能。它可以适当地选自传统的压敏粘合剂,例如橡胶基压敏粘合剂、丙烯酸类压敏粘合剂、聚酰胺压敏粘合剂、硅氧烷压敏粘合剂、聚酯压敏粘合剂和聚氨酯压敏粘合剂。其中,适合使用包含丙烯酸类聚合物作为基本聚合物的丙烯酸类压敏粘合剂,因为它们在包括耐热性和耐候性的多种性能方面是优异的,并且可以通过选择例如构成所述丙烯酸类聚合物的单体成分的种类而使其具有所需性能。
作为丙烯酸类压敏粘合剂的基本聚合物的丙烯酸类聚合物由一种或多种作为主要单体成分的(甲基)丙烯酸烷基酯构成。作为甲基丙烯酸烷基酯,可以使用例如(甲基)丙烯酸C1-20烷基酯,例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯和(甲基)丙烯酸二十烷基酯(优选(甲基)丙烯酸C1-12烷基酯,更优选(甲基)丙烯酸C1-8烷基酯)。可以选择使用一种或多种(甲基)丙烯酸烷基酯。
为了改进内聚力、耐热性、交联性能等的目的,所述丙烯酸类聚合物可以任选包含得自一种或多种可与(甲基)丙烯酸烷基酯共聚合的其它单体成分的单元。这种单体成分的实例包括含羧基单体例如丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸和巴豆酸;含羟基单体例如(甲基)丙烯酸羟基丁酯、(甲基)丙烯酸羟基己酯、(甲基)丙烯酸羟基辛酯、(甲基)丙烯酸羟基癸酯、(甲基)丙烯酸羟基月桂基酯和甲基丙烯酸(4-羟甲基环己基)甲酯;含磺基单体例如苯乙烯磺酸、芳基磺酸、2-(甲基)丙烯酰氨基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺基丙酯和(甲基)丙烯酰氧基萘磺酸;含磷酸酯基的单体例如丙烯酰基磷酸2-羟基乙酯;(N-取代的)酰胺单体例如(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、N-丁基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺和N-羟甲基丙烷(甲基)丙烯酰胺;(甲基)丙烯酸氨基烷基酯单体例如(甲基)丙烯酸氨基乙酯、(甲基)丙烯酸N,N-二甲基氨基乙酯和(甲基)丙烯酸叔丁基氨基乙酯;(甲基)丙烯酸烷氧基烷酯单体;马来酰亚胺单体例如N-环己基马来酰亚胺、N-异丙基马来酰亚胺、N-月桂基马来酰亚胺和N-苯基马来酰亚胺;衣康酰亚胺单体例如N-甲基衣康酰亚胺、N-乙基衣康酰亚胺、N-丁基衣康酰亚胺、N-辛基衣康酰亚胺、N-2-乙基己基衣康酰亚胺、N-环己基衣康酰亚胺和N-月桂基衣康酰亚胺;琥珀酰亚胺单体例如N-(甲基)丙烯酰氧基亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-6-氧基六亚甲基琥珀酰亚胺、和N-(甲基)丙烯酰基-8-氧基八亚甲基琥珀酰亚胺;乙烯基单体例如醋酸乙烯酯、丙酸乙烯酯、N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基唑、乙烯基吗啉、N-乙烯基羧酰胺、苯乙烯、α-甲基苯乙烯和N-乙烯基己内酰胺;氰基丙烯酸酯单体例如丙烯腈和甲基丙烯腈;含环氧基丙烯酸类单体例如(甲基)丙烯酸缩水甘油基酯;二醇丙烯酸酯单体例如聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯和甲氧基聚丙二醇(甲基)丙烯酸酯;具有一个或多个杂环、卤素原子、硅原子等的丙烯酸酯单体,例如(甲基)丙烯酸四氢糠基酯、氟代(甲基)丙烯酸酯和硅氧烷(甲基)丙烯酸酯;多官能单体例如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧丙烯酸酯、聚酯丙烯酸酯、聚氨酯丙烯酸酯、二乙烯基苯、丁烯二(甲基)丙烯酸酯和己烯二(甲基)丙烯酸酯;烯烃单体例如异戊二烯、丁二烯和异丁烯;和乙烯基醚单体例如乙烯基醚。这些单体成分可以单独使用或以其两种或更多种组合使用。
可以用传统的合适方法,通过聚合一种或多种任选上述列举的(甲基)丙烯酸烷基酯和一种或多种其它单体,生产丙烯酸类共聚物。所述丙烯酸类共聚物的分子量没有特别限定。例如,可以使用重均分子量为100,000-2,000,000,优选150,000-1,000,000,更优选300,000-1,000,000的丙烯酸类共聚物。
所述压敏粘合剂可以是通过将可能量射线聚合的化合物加入至压敏粘合剂中或通过使用具有其中引入了可能量射线聚合的双键的基本聚合物而得到的可能量射线固化的压敏粘合剂。由可能量射线固化压敏粘合剂构成的压敏粘合剂层在用能量射线辐照之前表现出足够的粘合力,但是在用能量射线辐照时粘合力显著降低。可以容易地剥离采用了该压敏粘合剂层的压敏粘合片,而不会对所述被粘物施加应力。能量射线的实例包括紫外线和电子束。
作为可能量射线聚合的化合物,可以使用在其分子中具有两个或更多个可能量射线聚合的碳-碳双键的化合物。这种化合物的实例包括多官能的丙烯酸酯化合物。其具体实例包括线性脂肪族多羟基化合物的(甲基)丙烯酸酯,例如1,4-丁二醇二(甲基)丙烯酸酯、1,5-戊二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯和聚丙二醇二(甲基)丙烯酸酯;具有一个或多个脂环基的脂肪族多羟基化合物的(甲基)丙烯酸酯,例如环己烷二羟甲基二(甲基)丙烯酸酯和三环癸烷二羟甲基二丙烯酸酯;和支化脂肪族多羟基化合物的(甲基)丙烯酸酯,例如三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯和季戊四醇四(甲基)丙烯酸酯,以及这些(例如,二(三羟甲基丙烷)四丙烯酸酯和二季戊四醇六丙烯酸酯)的缩合物。
作为可能量射线聚合的化合物,还可以使用多官能丙烯酸酯低聚物例如聚氨酯丙烯酸酯低聚物。所述聚氨酯丙烯酸酯低聚物例如通过将二异氰酸酯化合物与多羟基化合物反应以得到聚氨酯低聚物,和将该低聚物与具有羟基的(甲基)丙烯酸烷基酯反应而获得。所述二异氰酸酯化合物的实例包括甲苯基二异氰酸酯、二苯甲烷二异氰酸酯、六亚甲基二异氰酸酯、亚苯基二异氰酸酯、二环己基甲烷二异氰酸酯、二甲苯二异氰酸酯、四甲基二甲苯二异氰酸酯、萘二异氰酸酯和异氟乐酮二异氰酸酯。所述多羟基化合物的实例包括多元醇例如乙二醇、1,4-丁二醇、1,6-己二醇、二甘醇、三羟甲基丙烷、二丙二醇、聚乙二醇、聚丙二醇、季戊四醇、二季戊四醇和丙三醇。其实例进一步包括通过这些多元醇与脂族二羧酸例如己二酸、癸二酸、壬二酸或马来酸,或与芳族二羧酸例如对苯二甲酸或间苯二甲酸缩合反应得到的聚酯多羟基化合物。聚醚多羟基化合物例如聚乙烯醚二醇、聚丙烯醚二醇、聚四亚甲基醚二醇和聚六亚甲基醚二醇;内酯多羟基化合物例如聚已内酯二醇、聚丙内酯二醇和聚戊内酯二醇;以及通过多元醇例如乙二醇、丙二醇、丁二醇、戊二醇、辛二醇或壬二醇与碳酸二亚乙酯、碳酸二亚丙酯等的醇消除反应而获得的聚碳酸酯多羟基化合物。所述含羟基的(甲基)丙烯酸烷基酯化合物的实例包括(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂基酯、甲基(甲基)丙烯酸(4-羟甲基环己基)甲酯。
在使用可能量射线聚合化合物的情况下,其量相对于100重量份基本聚合物,可以选自例如5-200重量份,优选10-100重量份,和更优选10-45重量份。
在所用的可能量射线聚合的化合物为其中每个分子平均具有五个或更多反应位点的化合物的情况下,其导致提高体膨胀系数。因此存在压敏粘合片具有提高的热收缩比或在能量射线照射时压敏粘合剂收缩导致压敏粘合片翘曲的情况。
在将可能量射线聚合的双键引入到基本聚合物中以赋予压敏粘合剂可能量射线固化能力的情况下,实现它可通过在生产例如作为基本聚合物的丙烯酸类聚合物中,共聚合具有反应性官能团例如羧基、羟基或氨基的可共聚单体,从而将官能团作为反应位点引入到所述基本聚合物中,和通过将具有可能量射线聚合碳-碳双键的低聚物与聚合物通过作为反应位点的官能团与所述聚合物结合而进行。如此,可以得到在侧链中具有可能量射线聚合的碳-碳双键的基本聚合物。
可能量射线固化压敏粘合剂可以任选包含光聚合引发剂。用能量射线辐照时,激发并活化光聚合引发剂以产生自由基,从而促进所述压敏粘合剂层的有效聚合/固化反应。所述光聚合引发剂的实例包括安息香烷基醚引发剂例如安息香甲醚、安息香乙醚、安息香异丙醚和安息香异丁醚;二苯甲酮引发剂例如二苯甲酮、苯甲酰苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮和聚乙烯基二苯甲酮;芳香酮引发剂例如α-羟基环己基苯基酮、4-(2-羟基乙氧基)苯基2-羟基-2-丙基酮、α-羟基-α,α’-二甲基苯乙酮、甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮和2,2-二乙氧基苯乙酮;芳香族缩酮引发剂例如苄基二甲基缩酮;噻吨酮引发剂例如噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2-乙基噻吨酮、2-异丙基噻吨酮、2-十二烷基噻吨酮、2,4-二氯噻吨酮、2,4-二甲基噻吨酮、2,4-二乙基噻吨酮和2,4-二异丙基噻吨酮;苯偶酰引发剂例如苯偶酰;和安息香引发剂例如安息香。其实例进一步包括α-酮醇化合物(例如,2-甲基-2-羟基苯基丙酮)、芳香族磺酰氯化合物(例如,2-萘磺酰氯)、旋光活性肟化合物(例如,1-苯基-1,1-丙烷二酮-2-(邻-乙氧羰基)肟)、樟脑醌、卤代酮、酰基氧化膦和酰基膦酸酯。这些光聚合引发剂可以单独使用或以其两种或更多种的组合使用。
所述压敏粘合剂可以是亲水性压敏粘合剂,所述亲水性压敏粘合剂通过使用作为基本聚合物的具有酸基例如羧基的聚合物,和向其中加入中和剂,以中和全部或部分在所述基本聚合物中的酸基,从而赋予聚合物亲水性而获得。亲水性压敏粘合剂通常较不易于在被粘物上留下粘合剂残余物,并且即使它留下粘合剂残余物,也可以通过用纯水洗涤容易除去该残余物。可以通过在生产基本聚合物中,将具有酸基的单体,例如上述列举的含羧基单体进行共聚合得到具有酸基的聚合物。作为所述中和剂,可以使用例如伯胺例如单乙胺或单乙醇胺、仲胺例如二乙胺或二乙醇胺、叔胺例如三乙胺、三乙醇胺、N,N,N’-三甲基乙二胺、N-甲基二乙醇胺、或N,N-二乙基羟基胺,或具有碱度的有机氨基化合物。
所述压敏粘合剂可以任选包含交联剂。作为所述交联剂,可以使用例如环氧交联剂、异氰酸酯交联剂、三聚氰胺交联剂、过氧化物交联剂、金属醇盐交联剂、金属螯合物交联剂、金属盐交联剂、碳二亚胺交联剂、唑啉交联剂、氮丙啶交联剂、胺交联剂等。优选使用环氧交联剂或异氰酸酯交联剂。所述环氧交联剂的实例包括N,N,N′,N′-四缩水甘油基-间-二甲苯二胺、二缩水甘油基苯胺、1,3-双(N,N-二缩水甘油基氨基甲基)环已烷、1,6-已二醇二缩水甘油基醚、新戊二醇二缩水甘油基醚、乙二醇二缩水甘油基醚、丙二醇二缩水甘油基醚、聚乙二醇二缩水甘油基醚、聚丙二醇二缩水甘油基醚、山梨醇聚缩水甘油基醚、丙三醇聚缩水甘油基醚、季戊四醇聚缩水甘油基醚、聚甘油聚缩水甘油基醚、脱水山梨糖醇聚缩水甘油基醚、三羟甲基丙烷聚缩水甘油基醚、己二酸二缩水甘油基酯、邻苯二甲酸二缩水甘油基酯、三缩水甘油基三(2-羟基乙基)异氰脲酸酯、间苯二酚二缩水甘油基醚、双酚S二缩水甘油基醚、以及在其分子中具有两个或更多环氧基的环氧树脂。所述异氰酸酯交联剂的实例包括低级脂肪族聚异氰酸酯例如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯、1,6-亚己基二异氰酸酯;脂肪族聚异氰酸酯例如环戊撑二异氰酸酯、环己撑二异氰酸酯、异氟乐酮二异氰酸酯、氢化亚甲苯基二异氰酸酯、和氢化亚二甲苯基二异氰酸酯;和芳香族聚异氰酸酯例如2,4-亚甲苯基二异氰酸酯、2,6-亚甲苯基二异氰酸酯、4,4’-二苯基甲烷二异氰酸酯和亚二甲苯基二异氰酸酯。
所述压敏粘合剂层可以通过用合适的技术,使用刮刀涂布机、辊式涂布机、凹槽辊涂布机、模具涂布机、反转辊式涂布机等,将所述压敏粘合剂施加至基材而形成。替代地,可以使用如下方法,其中在浇铸用合适工艺片材、例如经历表面防粘处理的膜上形成压敏粘合剂层,并将该压敏粘合剂层转移至基材上。尽管所述压敏粘合剂层的厚度没有特别限定,但其优选为10μm或更大(例如10-200μm),更优选15μm或更大(例如15-100μm),和特别优选18μm或更大(例如18-50μm)。当所述压敏粘合剂层的厚度在该范围内时,该压敏粘合剂层减小所述基材的应力,以改进所述压敏粘合片的应力松弛比。
所述压敏粘合剂层的弹性模量优选为1.0×104至1.0×107。在该范围外的弹性模量是不合乎需要的,因为存在这样的压敏粘合剂层不具有使所述粘合层适用于半导体晶片的背面研磨的压敏粘合片的压敏粘合剂性能的情况。在将可能量射线固化压敏粘合剂用作所述压敏粘合剂的情况下,所述弹性模量是指没有被固化(用能量射线辐照之前)的压敏粘合剂层的弹性模量。
基材
可以适当地选择和使用基材,使得如上所述热收缩比、应力松弛比、每单位面积应力和在应用中伸长度的各自值在各自所需范围中。尽管所述基材没有特别限定,但例如可以使用由树脂(塑料)制成的膜。构成所述树脂膜的树脂没有特别限定,并且可以是固化的树脂(例如热固性树脂或光固化的树脂)或热塑性树脂。其实例包括下列聚合物:聚烯烃例如低密度聚乙烯、线型聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、丙烯无规共聚物、丙烯嵌段共聚物、丙烯均聚物、聚丁烯和聚甲基戊烯、乙烯/醋酸乙烯酯共聚物、离聚物树脂、乙烯/(甲基)丙烯酸酯共聚物、乙烯/(甲基)丙烯酸酯(无规或交替)共聚物、乙烯/丁烯共聚物、乙烯/己烯共聚物、聚氨酯、聚酯例如聚(对苯二甲酸乙二醇酯)和聚(萘二甲酸乙二醇酯)、(甲基)丙烯酸类聚合物、聚苯乙烯、聚碳酸酯、聚酰亚胺、聚酰胺、聚(酰胺-酰亚胺)、聚醚酰亚胺、聚砜、聚醚砜、聚(氯乙烯)、聚(偏二氯乙烯)、氟树脂、纤维素树脂、和通过交联这些聚合物得到的聚合物。根据需要可以使用两种或更多种这些树脂的混合物。这些树脂可以任选包含添加剂例如无机填料例如碳酸钙、二氧化硅或云母、金属填料例如铁或铅,和着色剂例如颜料或染料。考虑到改进所述压敏粘合片的应力松弛比,用于构成所述基材的材料优选是具有高应力释放性能的树脂,例如热塑性弹性体。所述基材可以是单层膜,或可以是利用每种树脂优点的层压物(多层膜)。
所述层压物的实例包括层压膜,其包含芯层和布置在所述芯层至少一面上的表面层。优选地,所述表面层已经布置在所述芯层的每侧上,并且该层压膜具有三层结构,该结构由以如下次序层压的表面层、芯层和另一表面层构成。用于构成所述芯层和所述表面层的材料优选选自聚烯烃树脂例如低密度聚乙烯、线型聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、丙烯无规共聚物、丙烯嵌段共聚物、丙烯均聚物、聚丁烯、聚甲基戊烯、乙烯/醋酸乙烯酯共聚物、离聚物树脂、乙烯/(甲基)丙烯酸酯共聚物、乙烯/(甲基)丙烯酸酯(无规或交替)共聚物、乙烯/丁烯共聚物、和乙烯/己烯共聚物,和用电子束或γ-射线以1-80Mrad剂量辐照这些聚烯烃树脂而得到的聚合物。优选分别构成所述芯层和所述表面层的材料选自这些聚烯烃树脂,使得各层热收缩比不同,并且相互干扰,从而降低所述基材的整体热收缩比。这样组合的实例包括聚乙烯和聚丙烯的组合。特别优选结晶聚乙烯和非结晶聚丙烯的组合。当使用包含聚乙烯和聚丙烯的层压物作为基材时,从固定性能的观点出发,优选将聚乙烯的层布置在所述基材与所述压敏粘合剂层接触的那面上。在所述层压物具有包含分别布置在芯层两面表面层的结构情况下,优选这两个表面层由同类材料构成。
构成所述层压物的层厚度之间的比例没有特别限定。然而,优选所述芯层的厚度大于每个表面层的厚度。一个表面层厚度与所述芯层的厚度的比例可以选自例如1∶12至3∶5,优选1∶10至3∶10。在所述层压物包括分别布置在所述芯层两面上的两个表面层的情况下,一个表面层的厚度和另一个表面层的厚度可以相同或不同。尽管一个表面层的厚度与另一个表面层的厚度的比例可以选自例如1∶1至1∶5,但优选这两个表面层具有相同厚度。特别优选所述层压物是多层膜,其中(表面层)∶(芯层)∶(表面层)的厚度比是2∶9∶2。可以任选在所述芯层和每个表面层之间布置合适的中间层。所述中间层的实例包括用于改进所述层之间粘附的粘合剂层或衬底层。
形成所述基材的方法没有特别限定。其实例包括如下方法,其中将以颗粒形式的树脂熔融,并用挤出成膜机制成膜;和如下方法,其中具有T-模头或充气膨胀的挤出模具或通过压延形成膜。所述基材的热收缩比显著取决于膜形成步骤中的温度条件。为了调节所述压敏粘合片或基材的热收缩比至2%或更低,合乎需要的是选择通过膜形成步骤生产的基材,该膜形成步骤不包括拉伸。基材的上面,即待形成压敏粘合剂层的侧面可以进行化学或物理氧化处理例如电晕处理、铬酸盐处理、臭氧曝置、火焰曝置、暴露至高压电击、电离辐射处理等,以便具有改进的与所述压敏粘合剂的粘附。
所述基材的厚度可以选自例如30-1,000μm,优选40-800μm,更优选50-500μm,特别优选100-200μm。可以选择合适的厚度,使得所述基材或压敏粘合片具有上述范围内的性能。
如上所述,本发明半导体晶片加工用压敏粘合片各自具有基材和在其上形成的压敏粘合剂层。根据需要,可以用合适的隔离物保护所述压敏粘合剂层。所述半导体晶片加工用压敏粘合片各自可以是卷形式或片状。它们可以片材或带材形式等。
如此得到的本发明压敏粘合片可以用作例如用于多种被粘物例如电子部件的表面保护片材,并且其应用没有特别限定。本发明压敏粘合片较不易翘曲,并可以在施加至被粘物后保持平坦状态。因此所述压敏粘合片可以有利地用作在被粘物的储存、输送或加工中的表面保护片材,其中所述被粘物即使用轻微的力也容易弯曲或破裂,例如为超薄型的半导体晶片。所述粘合片还适用于在硅晶片的镜面抛光中的保护。此外,它们可以优选用作在半导体晶片处理步骤中加工用的压敏粘合片。特别地,当将所述半导体晶片抛光至非常小的厚度时,该粘合片适用作保护压敏粘合片(背面研磨片材),用于保护半导体晶片电路表面。
在研磨半导体晶片背面的步骤中,首先将本发明半导体晶片加工用压敏粘合片的压敏粘合剂层施加至所述晶片的表面上(电路图形表面)。用被称为层压机的装置以如下方式进行该施加步骤,所述方式为对所述粘合片施加的拉力尽可能小。然而,基本上不可能在施加粘合片的同时完全不施加拉力。因此,当施加迄今为止使用的传统压敏粘合片时,拉力在压敏粘合片中积累为残余应力以致所述半导体晶片翘曲或破裂。相反,本发明半导体晶片加工用压敏粘合片在应用中具有低的伸长度,因此具有降低的内应力。
随后,用磨机等研磨所述晶片的背面,直至所述晶片厚度降低至给定值(例如50-200μm)。根据需要,进行通过例如蚀刻的化学研磨。在该操作中,半导体晶片加工用压敏粘合片用来固定所述半导体晶片,以及保护所述半导体晶片的前面(电路图形表面),从而防止晶片表面被沾污或损伤。通常,存在如下问题,即作为被粘物的超薄型晶片通过压敏粘合片的热收缩而弯曲(翘曲),其中所述压敏粘合片的热收缩是由于在晶片背面研磨的步骤中和在所述研磨之后的加工步骤中产生的热量,或通过在所述压敏粘合片中积累的残余应力或因为其协同效应导致的。顺便提及,与该热收缩和翘曲有关的问题,在很多情况下,可归因于在所述压敏粘合片中的基材。根据本发明半导体晶片加工用压敏粘合片,在应用中,导致翘曲的热收缩、压敏粘合片伸长产生的应力、应力消除性能、和在应用中所述压敏粘合片的伸长中的至少一种被改善。因此,即使在研磨晶片至极其小的厚度时,本发明压敏粘合片也不会使所述晶片弯曲,并可以保持所述晶片平坦。特别当所述压敏粘合片用于研磨易于翘曲的大直径半导体晶片至极其小的厚度时,可以进行该操作而不会使所述晶片翘曲。
希望在完成晶片背面研磨步骤后,可从所述被粘物上剥离半导体晶片加工用压敏粘合片,而不会破坏所述半导体晶片或留下粘合剂残余物。在本发明半导体晶片加工用压敏粘合片的压敏粘合剂层由可能量射线固化压敏粘合剂构成的情况下,用能量射线(例如紫外线或电子束)从背面(基材侧)辐照所述压敏粘合片,以降低所述压敏粘合剂层的粘合力,从而可以容易地剥离所述压敏粘合片,而不在所述被粘物上留下粘合剂残余物或使被粘物破裂。
实施例
以下将参考实施例更详细地说明本发明,但是本发明不应被解释为由下列实施例限定。
实施例1
在甲苯中,通过溶液聚合方法共聚合97重量份丙烯酸丁酯、2重量份甲基丙烯酸甲酯和3重量份丙烯酸,得到重均分子量550,000的丙烯酸类聚合物。混合100重量份该丙烯酸类聚合物与0.3重量份环氧交联剂(商品名“TETRAD C”,由Mitsubishi Gas Chemical Co.,Ltd.生产),得到压敏粘合剂组合物A。用喷射模具(fountain die)方法,将压敏粘合剂组合物A施加至浇铸用加工片材(50μm-厚的PET膜,由TorayIndustries,Inc.生产),施加的量为得到20μm的干燥厚度。如此,形成压敏粘合剂层。
用挤出机通过共挤出制备层压膜A作为基材,该膜具有150μm的厚度,并包括聚乙烯/非结晶聚丙烯/聚乙烯的三层结构。在层压膜A中,所述层的厚度比例是:聚乙烯/非结晶聚丙烯/聚乙烯=2∶9∶2。将压敏粘合剂层A通过转移层压至层压膜A上,并将得到的层压物在40℃下老化24小时,得到压敏粘合片A。
实施例2
在甲苯中,共聚合50重量份丙烯酸乙酯、50重量份丙烯酸丁酯和5重量份丙烯酸,得到重均分子量为650,000的丙烯酸类聚合物。混合100重量份该丙烯酸类聚合物与20重量份可紫外线固化的低聚物(商品名“UV-1700”,由The Nippon Synthetic Chemical Industry Co.,Ltd.生产)、1重量份聚异氰酸酯交联剂(商品名“Coronate L”,由NipponPolyurethane Co.,Ltd.生产)和3重量份光聚合引发剂(商品名“Irgacure651”,由Ciba Specialty Chemicals Co.生产)。如此,得到可能量射线固化丙烯酸类压敏粘合剂组合物B。
以与实施例1中相同的方法进行随后操作,除了使用压敏粘合剂组合物B代替压敏粘合剂组合物A。如此,得到可能量射线固化的压敏粘合片B。
实施例3
进行与实施例1相同的过程,除了使用厚度为50μm的聚酰亚胺膜(商品名“200H”,由Du Pont-Toray Co.,Ltd.生产)作为基材。如此,得到压敏粘合片C。
对比例1
进行与实施例1相同的过程,除了将通过熔融醋酸乙烯酯含量为17重量%的乙烯/醋酸乙烯酯共聚物,以及然后用挤出机挤出-模制所述熔融物得到的150μm厚的单层膜作为基材。如此,得到压敏粘合片D。
对比例2
进行与实施例1相同的过程,除了通过将3重量份聚(甲基丙烯酸甲酯)(PMMA树脂,由Ardrich Co.生产)加入至100重量份丙烯酸树脂(商品名“Parapet SA”,由Kuraray Co.,Ltd.生产)中,熔融得到的混合物,以及用挤出机挤出模制所述熔融物而得到150μm厚单层膜作为基材。如此,得到压敏粘合片E。
测试评价
对在实施例和对比例中得到的压敏粘合片进行下列测试评价。得到的结果列于表1。
热收缩比
将在实施例和对比例中得到的每种压敏粘合片切成边长为200mm的正方形形状。用精密测径规测量压敏粘合剂施加方向的样品长度A和垂直于A方向的样品长度A′。在60℃环境将该样品静置10分钟。该静置后,测量施加压敏粘合剂方向的样品长度B和垂直于B方向的长度B′。分别计算(A-B)/A×100(%)和(A′-B′)/A′×100的值,并将它们中较大的一个定义为该压敏粘合片的热收缩比。
应力松弛比
将实施例和对比例中得到的每种压敏粘合片切成宽度15mm和长度30mm的测试片。以200mm/min的速度,用通用拉伸试验机拉伸该测试片以测量在2%伸长率下的应力K和伸长停止后1分钟时的应力L。使用下列公式计算应力松弛比。
应力松弛比(%)=(K-L)/K
伸长后的每单位面积应力
将实施例和对比例中得到的每种压敏粘合片切成宽度15mm和长度300mm的测试样品。以200mm/min的速度,用通用拉伸试验机拉伸该测试样品。在拉伸所述测试样品2%后,立即测量产生的应力。根据在2%伸长率下的应力P(N)和所述压敏粘合片的总厚度Q(mm),使用下列公式计算每单位面积应力。
每单位面积应力=P/(15×Q)
应用至晶片的伸长度
将实施例和对比例中制备的每种压敏粘合片切成宽度为20cm、长度为25cm的测试片。在保持所述压敏粘合剂层表面暴露的同时,用精密测径规测量样品的宽度α和长度α′。以10厘米/秒的速度,用2kg的橡胶辊将该样品施加至300mm硅晶片的表面上,而不向其施加拉力。在所述施加后,测量该样品的宽度β和长度β′。使用下列公式计算宽度方向伸长度γ和长度方向伸长度γ′。
γ(%)=(β-α)/α×100
γ′(%)=(β′-α′)/α′×100
将γ和γ′数值中较大的一个作为在晶片施加中压敏粘合片的伸长度。
晶片翘曲
使用带材安装机(DR-8500-II,由Nitto Seiki Inc.生产),将在实施例和对比例中得到的每种压敏粘合片施加至硅晶片(直径,200mm;厚度,750μm)上。用研磨机(DFD-8560,由Disco Corp.生产)研磨该硅晶片,直至所述硅晶片的厚度达到90μm。在所述研磨后,在根据JIS B7513具有一级平坦度的精密检测用压板上,放置具有粘附其上的压敏粘合片的硅晶片。检查该硅晶片从作为零水平表面的压板的高度,检验20个点。测定所述硅晶片高度的最大值和最小值之间的差异作为所述晶片的翘曲。
表1
实施例1 | 实施例2 | 实施例3 | 对比例1 | 对比例2 | |
基材厚度(μm) | 150 | 150 | 50 | 150 | 150 |
压敏粘合剂层厚度(μm) | 20 | 20 | 20 | 20 | 20 |
可能量射线固化 | 不可以 | 可以 | 不可以 | 不可以 | 不可以 |
热收缩比(%) | 1 | 1 | 0.05 | 2.4 | 3 |
1分钟后应力松弛比(%) | 20 | 22 | 1 | 9 | 50 |
10分钟后应力松弛比(%) | 25 | 26 | 3 | 12 | 70 |
伸长后即刻每单位面积应力(N/mm2) | 3 | 2.5 | 30 | 4 | 2.5 |
伸长度(%) | 0.3 | 0.4 | 0.02 | 0.45 | 2.0 |
晶片翘曲(mm) | 0.5 | 0.3 | 0.8 | 3 | 4.5 |
尽管已经参考具体实施方式详细地描述了本发明,但是在不脱离其范围情况下的多种改变和改进对于本领域熟练技术人员是显而易见的。
该申请基于2006年8月10日提交的日本专利申请No.2006-218681,其中全部内容在此引入作为参考。
另外,此处提到的全部参考文献引入其全部内容。
Claims (18)
1.一种用于半导体晶片加工的压敏粘合片,其包含基材和布置在该基材上的压敏粘合剂层,所述压敏粘合片或所述基材在60℃下静置保持10分钟后,热收缩比为2%或更低。
2.一种用于半导体晶片加工的压敏粘合片,其包含基材和布置在该基材上的压敏粘合剂层,所述压敏粘合片在拉伸试验中的伸长状态开始后1分钟时,在2%伸长下的应力松弛比为20%或更高。
3.权利要求2的压敏粘合片,其在拉伸试验中的伸长状态开始后10分钟时,在2%伸长下的应力松弛比为25%或更高。
4.一种用于半导体晶片加工的压敏粘合片,其包含基材和布置在该基材上的压敏粘合剂层,所述压敏粘合片在拉伸试验中伸长2%即刻的每单位面积的应力为4.5N/20mm2或更低。
5.一种用于半导体晶片加工的压敏粘合片,其包含基材和布置在该基材上的压敏粘合剂层,所述压敏粘合片在压敏粘合片的硅晶片应用测试中伸长度为2%或更低。
6.权利要求1的压敏粘合片,其在压敏粘合片的硅晶片应用测试中伸长度为2%或更低。
7.权利要求1的压敏粘合片,其中所述基材是由两层或更多不同材料制成的层构成的层压物。
8.权利要求2的压敏粘合片,其中所述基材是由两层或更多不同材料制成的层构成的层压物。
9.权利要求4的压敏粘合片,其中所述基材是由两层或更多不同材料制成的层构成的层压物。
10.权利要求5的压敏粘合片,其中所述基材是由两层或更多不同材料制成的层构成的层压物。
11.权利要求7的压敏粘合片,其中所述层压物包括两层,其每层均由聚烯烃树脂制成并具有不同的热收缩比。
12.权利要求8的压敏粘合片,其中所述层压物包括两层,其每层均由聚烯烃树脂制成并具有不同的热收缩比。
13.权利要求9的压敏粘合片,其中所述层压物包括两层,其每层均由聚烯烃树脂制成并具有不同的热收缩比。
14.权利要求10的压敏粘合片,其中所述层压物包括两层,其每层均由聚烯烃树脂制成并具有不同的热收缩比。
15.权利要求1的压敏粘合片,其在所述半导体晶片的背面研磨中用作表面保护片。
16.权利要求2的压敏粘合片,其在所述半导体晶片的背面研磨中用作表面保护片。
17.权利要求4的压敏粘合片,其在所述半导体晶片的背面研磨中用作表面保护片。
18.权利要求5的压敏粘合片,其在所述半导体晶片的背面研磨中用作表面保护片。
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CN103847032A (zh) * | 2014-03-20 | 2014-06-11 | 德清晶辉光电科技有限公司 | 一种大直径超薄石英晶片的生产工艺 |
CN103847032B (zh) * | 2014-03-20 | 2016-01-06 | 德清晶辉光电科技有限公司 | 一种大直径超薄石英晶片的生产工艺 |
CN107437493A (zh) * | 2016-05-27 | 2017-12-05 | 上海馨晔电子科技有限公司 | 一种用于晶圆减薄的表面保护胶膜 |
CN109207077A (zh) * | 2017-07-04 | 2019-01-15 | 日东电工株式会社 | 切割带、切割芯片接合薄膜、及半导体装置的制造方法 |
CN109207078A (zh) * | 2017-07-04 | 2019-01-15 | 日东电工株式会社 | 切割带和切割芯片接合薄膜 |
CN108321249A (zh) * | 2017-12-27 | 2018-07-24 | 中国电子科技集团公司第十八研究所 | 一种局部减薄砷化镓太阳电池制备方法 |
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EP1887061A2 (en) | 2008-02-13 |
JP2008047558A (ja) | 2008-02-28 |
EP1887061A3 (en) | 2011-01-19 |
TW200809949A (en) | 2008-02-16 |
US20080038551A1 (en) | 2008-02-14 |
KR20080014653A (ko) | 2008-02-14 |
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