CN101114677A - 非易失半导体存储器装置及其制造方法 - Google Patents

非易失半导体存储器装置及其制造方法 Download PDF

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Publication number
CN101114677A
CN101114677A CNA200610172731XA CN200610172731A CN101114677A CN 101114677 A CN101114677 A CN 101114677A CN A200610172731X A CNA200610172731X A CN A200610172731XA CN 200610172731 A CN200610172731 A CN 200610172731A CN 101114677 A CN101114677 A CN 101114677A
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China
Prior art keywords
layer
dielectric layer
transition metal
memory device
semiconductor memory
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Pending
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CNA200610172731XA
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English (en)
Chinese (zh)
Inventor
申尚旻
薛光洙
陈暎究
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101114677A publication Critical patent/CN101114677A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNA200610172731XA 2006-07-27 2006-12-26 非易失半导体存储器装置及其制造方法 Pending CN101114677A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060070886A KR20080010623A (ko) 2006-07-27 2006-07-27 비휘발성 반도체 메모리 소자 및 그 제조방법
KR70886/06 2006-07-27

Publications (1)

Publication Number Publication Date
CN101114677A true CN101114677A (zh) 2008-01-30

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ID=38985296

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200610172731XA Pending CN101114677A (zh) 2006-07-27 2006-12-26 非易失半导体存储器装置及其制造方法

Country Status (4)

Country Link
US (2) US20080023744A1 (enExample)
JP (1) JP2008034814A (enExample)
KR (1) KR20080010623A (enExample)
CN (1) CN101114677A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237367A (zh) * 2010-05-07 2011-11-09 中国科学院微电子研究所 一种闪存器件及其制造方法
CN106449647A (zh) * 2016-10-24 2017-02-22 上海华力微电子有限公司 Nor型闪存器件以及nor型闪存器件制造方法
CN106558481A (zh) * 2015-09-24 2017-04-05 中国科学院微电子研究所 半导体器件制造方法
CN107408498A (zh) * 2015-05-26 2017-11-28 桑迪士克科技有限责任公司 形成具有高k电荷俘获层的方法
CN111416035A (zh) * 2020-03-26 2020-07-14 中国科学院微电子研究所 非易失霍尔传感器及其制造方法、测试方法

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JP4314259B2 (ja) * 2006-09-29 2009-08-12 株式会社東芝 不揮発性半導体メモリ
KR20080031594A (ko) * 2006-10-04 2008-04-10 삼성전자주식회사 전하 트랩형 메모리 소자
US7973357B2 (en) * 2007-12-20 2011-07-05 Samsung Electronics Co., Ltd. Non-volatile memory devices
JP5071981B2 (ja) * 2008-03-05 2012-11-14 日本電信電話株式会社 半導体メモリ
US8062918B2 (en) * 2008-05-01 2011-11-22 Intermolecular, Inc. Surface treatment to improve resistive-switching characteristics
US20090303794A1 (en) * 2008-06-04 2009-12-10 Macronix International Co., Ltd. Structure and Method of A Field-Enhanced Charge Trapping-DRAM
KR20100027871A (ko) * 2008-09-03 2010-03-11 삼성전자주식회사 비휘발성 메모리 소자
KR101039801B1 (ko) * 2008-10-07 2011-06-09 고려대학교 산학협력단 비휘발성 메모리 소자 및 이를 제조하는 방법
US8252653B2 (en) * 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
JP4917085B2 (ja) 2008-12-15 2012-04-18 東京エレクトロン株式会社 半導体装置
KR101052475B1 (ko) * 2008-12-29 2011-07-28 주식회사 하이닉스반도체 비휘발성 메모리 소자의 제조 방법
JP4792094B2 (ja) * 2009-03-09 2011-10-12 株式会社東芝 不揮発性半導体メモリ
JP5367763B2 (ja) * 2011-06-06 2013-12-11 株式会社東芝 不揮発性半導体メモリ
JP5462897B2 (ja) * 2012-01-24 2014-04-02 東京エレクトロン株式会社 半導体装置の製造方法
JP5646569B2 (ja) * 2012-09-26 2014-12-24 株式会社東芝 半導体装置
JP5583238B2 (ja) * 2013-04-26 2014-09-03 株式会社東芝 Ｎａｎｄ型不揮発性半導体メモリ装置およびその製造方法
KR101452632B1 (ko) * 2013-05-14 2014-10-22 경희대학교 산학협력단 수직형 투과 반도체 소자
CN104217951B (zh) * 2013-06-04 2018-03-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
KR102372856B1 (ko) * 2014-11-28 2022-03-10 엘지전자 주식회사 마이크로 렌즈 어레이를 구비하는 광 검출 센서
JP6448503B2 (ja) * 2015-09-10 2019-01-09 東芝メモリ株式会社 不揮発性半導体記憶装置
CN107146759B (zh) * 2017-05-04 2020-06-05 湘潭大学 一种基于离子注入掺杂的氧化铪铁电栅制备方法
JP6293394B1 (ja) * 2017-07-04 2018-03-14 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
JP2019054068A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体記憶装置及びその製造方法
CN111937118A (zh) 2018-04-02 2020-11-13 朗姆研究公司 基于氧化铪的铁电材料的覆盖层
WO2019216907A1 (en) * 2018-05-11 2019-11-14 Hewlett-Packard Development Company, L.P. Passivation stacks
US20230197826A1 (en) * 2021-12-21 2023-06-22 Christine RADLINGER Self-aligned gate endcap (sage) architectures with improved cap

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US7132336B1 (en) * 2002-02-12 2006-11-07 Lsi Logic Corporation Method and apparatus for forming a memory structure having an electron affinity region
US7005697B2 (en) * 2002-06-21 2006-02-28 Micron Technology, Inc. Method of forming a non-volatile electron storage memory and the resulting device
KR100597642B1 (ko) * 2004-07-30 2006-07-05 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
DE102004052086A1 (de) * 2004-10-26 2006-04-27 Basf Ag Kondensatoren hoher Energiedichte
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
US20060131633A1 (en) * 2004-12-21 2006-06-22 Micron Technology, Inc. Integrated two device non-volatile memory
US7790516B2 (en) * 2006-07-10 2010-09-07 Qimonda Ag Method of manufacturing at least one semiconductor component and memory cells

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237367A (zh) * 2010-05-07 2011-11-09 中国科学院微电子研究所 一种闪存器件及其制造方法
WO2011137624A1 (zh) * 2010-05-07 2011-11-10 中国科学院微电子研究所 一种闪存器件及其制造方法
CN102237367B (zh) * 2010-05-07 2014-09-24 中国科学院微电子研究所 一种闪存器件及其制造方法
CN107408498A (zh) * 2015-05-26 2017-11-28 桑迪士克科技有限责任公司 形成具有高k电荷俘获层的方法
CN107408498B (zh) * 2015-05-26 2020-06-09 桑迪士克科技有限责任公司 形成具有高k电荷俘获层的方法
CN106558481A (zh) * 2015-09-24 2017-04-05 中国科学院微电子研究所 半导体器件制造方法
CN106558481B (zh) * 2015-09-24 2021-05-07 中国科学院微电子研究所 半导体器件制造方法
CN106449647A (zh) * 2016-10-24 2017-02-22 上海华力微电子有限公司 Nor型闪存器件以及nor型闪存器件制造方法
CN111416035A (zh) * 2020-03-26 2020-07-14 中国科学院微电子研究所 非易失霍尔传感器及其制造方法、测试方法
CN111416035B (zh) * 2020-03-26 2023-02-07 中国科学院微电子研究所 非易失霍尔传感器及其制造方法、测试方法

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US20100323509A1 (en) 2010-12-23
US20080023744A1 (en) 2008-01-31
KR20080010623A (ko) 2008-01-31
JP2008034814A (ja) 2008-02-14

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Application publication date: 20080130