JP2008034814A - 不揮発性半導体メモリ素子及びその製造方法 - Google Patents

不揮発性半導体メモリ素子及びその製造方法 Download PDF

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Publication number
JP2008034814A
JP2008034814A JP2007156400A JP2007156400A JP2008034814A JP 2008034814 A JP2008034814 A JP 2008034814A JP 2007156400 A JP2007156400 A JP 2007156400A JP 2007156400 A JP2007156400 A JP 2007156400A JP 2008034814 A JP2008034814 A JP 2008034814A
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JP
Japan
Prior art keywords
film
transition metal
doped
semiconductor memory
memory device
Prior art date
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Pending
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JP2007156400A
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English (en)
Japanese (ja)
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JP2008034814A5 (enExample
Inventor
Sang-Min Shin
尚旻 申
Koshu Setsu
光洙 薛
Young-Gu Jin
暎究 陳
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2008034814A publication Critical patent/JP2008034814A/ja
Publication of JP2008034814A5 publication Critical patent/JP2008034814A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2007156400A 2006-07-27 2007-06-13 不揮発性半導体メモリ素子及びその製造方法 Pending JP2008034814A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060070886A KR20080010623A (ko) 2006-07-27 2006-07-27 비휘발성 반도체 메모리 소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
JP2008034814A true JP2008034814A (ja) 2008-02-14
JP2008034814A5 JP2008034814A5 (enExample) 2010-07-29

Family

ID=38985296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007156400A Pending JP2008034814A (ja) 2006-07-27 2007-06-13 不揮発性半導体メモリ素子及びその製造方法

Country Status (4)

Country Link
US (2) US20080023744A1 (enExample)
JP (1) JP2008034814A (enExample)
KR (1) KR20080010623A (enExample)
CN (1) CN101114677A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009124183A (ja) * 2009-03-09 2009-06-04 Toshiba Corp 不揮発性半導体メモリ
JP2009212321A (ja) * 2008-03-05 2009-09-17 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリ
JP2011171771A (ja) * 2011-06-06 2011-09-01 Toshiba Corp 不揮発性半導体メモリ
US8129775B2 (en) 2008-12-15 2012-03-06 Tokyo Electron Limited Semiconductor device and method of manufacturing the same
JP2012119706A (ja) * 2012-01-24 2012-06-21 Tokyo Electron Ltd 半導体装置の製造方法
US8330201B2 (en) 2006-09-29 2012-12-11 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory using charge-accumulation insulating film
JP2013168673A (ja) * 2013-04-26 2013-08-29 Toshiba Corp Ｎａｎｄ型不揮発性半導体メモリ装置およびその製造方法

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KR20080031594A (ko) * 2006-10-04 2008-04-10 삼성전자주식회사 전하 트랩형 메모리 소자
US7973357B2 (en) * 2007-12-20 2011-07-05 Samsung Electronics Co., Ltd. Non-volatile memory devices
US8062918B2 (en) * 2008-05-01 2011-11-22 Intermolecular, Inc. Surface treatment to improve resistive-switching characteristics
US20090303794A1 (en) * 2008-06-04 2009-12-10 Macronix International Co., Ltd. Structure and Method of A Field-Enhanced Charge Trapping-DRAM
KR20100027871A (ko) * 2008-09-03 2010-03-11 삼성전자주식회사 비휘발성 메모리 소자
KR101039801B1 (ko) * 2008-10-07 2011-06-09 고려대학교 산학협력단 비휘발성 메모리 소자 및 이를 제조하는 방법
US8252653B2 (en) * 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
KR101052475B1 (ko) * 2008-12-29 2011-07-28 주식회사 하이닉스반도체 비휘발성 메모리 소자의 제조 방법
CN102237367B (zh) * 2010-05-07 2014-09-24 中国科学院微电子研究所 一种闪存器件及其制造方法
JP5646569B2 (ja) * 2012-09-26 2014-12-24 株式会社東芝 半導体装置
KR101452632B1 (ko) * 2013-05-14 2014-10-22 경희대학교 산학협력단 수직형 투과 반도체 소자
CN104217951B (zh) * 2013-06-04 2018-03-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
KR102372856B1 (ko) * 2014-11-28 2022-03-10 엘지전자 주식회사 마이크로 렌즈 어레이를 구비하는 광 검출 센서
US9368510B1 (en) * 2015-05-26 2016-06-14 Sandisk Technologies Inc. Method of forming memory cell with high-k charge trapping layer
JP6448503B2 (ja) * 2015-09-10 2019-01-09 東芝メモリ株式会社 不揮発性半導体記憶装置
CN106558481B (zh) * 2015-09-24 2021-05-07 中国科学院微电子研究所 半导体器件制造方法
CN106449647A (zh) * 2016-10-24 2017-02-22 上海华力微电子有限公司 Nor型闪存器件以及nor型闪存器件制造方法
CN107146759B (zh) * 2017-05-04 2020-06-05 湘潭大学 一种基于离子注入掺杂的氧化铪铁电栅制备方法
JP6293394B1 (ja) * 2017-07-04 2018-03-14 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
JP2019054068A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体記憶装置及びその製造方法
CN111937118A (zh) 2018-04-02 2020-11-13 朗姆研究公司 基于氧化铪的铁电材料的覆盖层
WO2019216907A1 (en) * 2018-05-11 2019-11-14 Hewlett-Packard Development Company, L.P. Passivation stacks
CN111416035B (zh) * 2020-03-26 2023-02-07 中国科学院微电子研究所 非易失霍尔传感器及其制造方法、测试方法
US20230197826A1 (en) * 2021-12-21 2023-06-22 Christine RADLINGER Self-aligned gate endcap (sage) architectures with improved cap

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7132336B1 (en) * 2002-02-12 2006-11-07 Lsi Logic Corporation Method and apparatus for forming a memory structure having an electron affinity region
US7005697B2 (en) * 2002-06-21 2006-02-28 Micron Technology, Inc. Method of forming a non-volatile electron storage memory and the resulting device
KR100597642B1 (ko) * 2004-07-30 2006-07-05 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
DE102004052086A1 (de) * 2004-10-26 2006-04-27 Basf Ag Kondensatoren hoher Energiedichte
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
US20060131633A1 (en) * 2004-12-21 2006-06-22 Micron Technology, Inc. Integrated two device non-volatile memory
US7790516B2 (en) * 2006-07-10 2010-09-07 Qimonda Ag Method of manufacturing at least one semiconductor component and memory cells

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8330201B2 (en) 2006-09-29 2012-12-11 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory using charge-accumulation insulating film
US8759896B2 (en) 2006-09-29 2014-06-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory using charge-accumulation insulating film
JP2009212321A (ja) * 2008-03-05 2009-09-17 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリ
US8129775B2 (en) 2008-12-15 2012-03-06 Tokyo Electron Limited Semiconductor device and method of manufacturing the same
JP2009124183A (ja) * 2009-03-09 2009-06-04 Toshiba Corp 不揮発性半導体メモリ
JP2011171771A (ja) * 2011-06-06 2011-09-01 Toshiba Corp 不揮発性半導体メモリ
JP2012119706A (ja) * 2012-01-24 2012-06-21 Tokyo Electron Ltd 半導体装置の製造方法
JP2013168673A (ja) * 2013-04-26 2013-08-29 Toshiba Corp Ｎａｎｄ型不揮発性半導体メモリ装置およびその製造方法

Also Published As

Publication number Publication date
US20100323509A1 (en) 2010-12-23
CN101114677A (zh) 2008-01-30
US20080023744A1 (en) 2008-01-31
KR20080010623A (ko) 2008-01-31

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