CN101114667A - 有机薄膜晶体管基板及其制造方法 - Google Patents

有机薄膜晶体管基板及其制造方法 Download PDF

Info

Publication number
CN101114667A
CN101114667A CNA2007101494189A CN200710149418A CN101114667A CN 101114667 A CN101114667 A CN 101114667A CN A2007101494189 A CNA2007101494189 A CN A2007101494189A CN 200710149418 A CN200710149418 A CN 200710149418A CN 101114667 A CN101114667 A CN 101114667A
Authority
CN
China
Prior art keywords
gate
electrode
organic
conductive layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007101494189A
Other languages
English (en)
Chinese (zh)
Inventor
宋根圭
赵承奂
金保成
金泳敏
慎重汉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101114667A publication Critical patent/CN101114667A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
CNA2007101494189A 2006-07-12 2007-07-12 有机薄膜晶体管基板及其制造方法 Pending CN101114667A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR65343/06 2006-07-12
KR1020060065343A KR20080006316A (ko) 2006-07-12 2006-07-12 유기 박막 트랜지스터와 그의 제조 방법

Publications (1)

Publication Number Publication Date
CN101114667A true CN101114667A (zh) 2008-01-30

Family

ID=38668787

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101494189A Pending CN101114667A (zh) 2006-07-12 2007-07-12 有机薄膜晶体管基板及其制造方法

Country Status (6)

Country Link
US (1) US7858971B2 (enExample)
EP (1) EP1879233A1 (enExample)
JP (1) JP2008022008A (enExample)
KR (1) KR20080006316A (enExample)
CN (1) CN101114667A (enExample)
TW (1) TW200814386A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103579288A (zh) * 2012-07-27 2014-02-12 创造者科技有限公司 像素控制结构及其阵列和制作方法、电子显示器及其背板

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101427707B1 (ko) * 2008-02-21 2014-08-11 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 그의 제조 방법
KR100923423B1 (ko) * 2008-03-28 2009-10-27 전자부품연구원 유기 박막 트랜지스터 및 그의 제조 방법
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2010080896A (ja) * 2008-09-29 2010-04-08 Toppan Printing Co Ltd 電界効果型トランジスタ及びその製造方法並びに画像表示装置
US8191936B2 (en) 2008-11-12 2012-06-05 Cole Kepro International, Llc Gaming machine door latch
KR102771839B1 (ko) 2009-11-13 2025-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9299941B2 (en) 2011-01-13 2016-03-29 Samsung Electronics Co., Ltd. Organic semiconductor device and method of manufacturing the same
CN103650149B (zh) 2011-08-03 2016-04-13 松下电器产业株式会社 显示面板装置及其制造方法
WO2013046547A1 (ja) 2011-09-26 2013-04-04 パナソニック株式会社 有機薄膜トランジスタ
US20160216584A1 (en) * 2015-01-26 2016-07-28 Samsung Display Co., Ltd. Liquid crystal display and manufacturing method thereof
TWI647870B (zh) * 2017-11-29 2019-01-11 友達光電股份有限公司 有機薄膜電晶體及畫素結構
JP7168497B2 (ja) * 2019-03-20 2022-11-09 スタンレー電気株式会社 液晶表示素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5167569B2 (ja) * 1999-06-21 2013-03-21 ケンブリッジ・エンタープライズ・リミテッド トランジスタの製造方法
JP2002215065A (ja) * 2000-11-02 2002-07-31 Seiko Epson Corp 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
KR100925460B1 (ko) 2002-12-05 2009-11-06 삼성전자주식회사 유기 박막 트랜지스터 기판 및 그 제조 방법
KR100973811B1 (ko) 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
KR100583252B1 (ko) 2003-12-29 2006-05-24 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
KR100736008B1 (ko) * 2004-06-07 2007-07-06 가시오게산키 가부시키가이샤 표시장치 및 그 제조방법
JP4672319B2 (ja) 2004-09-22 2011-04-20 株式会社東芝 有機半導体装置およびその製造方法
KR101078360B1 (ko) * 2004-11-12 2011-10-31 엘지디스플레이 주식회사 폴리형 액정 표시 패널 및 그 제조 방법
KR100603836B1 (ko) 2004-11-30 2006-07-24 엘지.필립스 엘시디 주식회사 유기전계발광 소자 및 그의 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103579288A (zh) * 2012-07-27 2014-02-12 创造者科技有限公司 像素控制结构及其阵列和制作方法、电子显示器及其背板
CN103579288B (zh) * 2012-07-27 2016-06-08 三星电子株式会社 像素控制结构及其阵列和制作方法、电子显示器及其背板

Also Published As

Publication number Publication date
US7858971B2 (en) 2010-12-28
US20080012024A1 (en) 2008-01-17
EP1879233A1 (en) 2008-01-16
JP2008022008A (ja) 2008-01-31
TW200814386A (en) 2008-03-16
KR20080006316A (ko) 2008-01-16

Similar Documents

Publication Publication Date Title
CN101114667A (zh) 有机薄膜晶体管基板及其制造方法
KR102040011B1 (ko) 디스플레이 장치의 정전기 방지 장치와 이의 제조 방법
US7781760B2 (en) Thin film transistor, electro-optical device, and electronic apparatus
CN102263111B (zh) 阵列基板及制造该阵列基板的方法
US9362513B2 (en) Organic thin film transistor substrate and method of manufacturing the same
KR20030082651A (ko) 박막 트랜지스터 어레이 기판 및 그 제조 방법
CN100523973C (zh) 液晶显示器件的阵列基板及其制造方法
US9842915B2 (en) Array substrate for liquid crystal display device and method of manufacturing the same
JP2010003723A (ja) 薄膜トランジスタ及び薄膜トランジスタアレイ並びに画像表示装置
CN100593869C (zh) 平板显示器和平板显示器的制造方法
US8785264B2 (en) Organic TFT array substrate and manufacture method thereof
CN102280582A (zh) 显示装置的制造方法
KR101427707B1 (ko) 유기 박막 트랜지스터 기판 및 그의 제조 방법
US8278648B2 (en) Fabrication method for an organic thin film transistor substrate
KR101198907B1 (ko) 유기 박막 트랜지스터 기판 및 그 제조 방법
KR20070013132A (ko) 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
CN1905232B (zh) 薄膜晶体管基板及其制造方法
CN1971967A (zh) 显示装置及其制造方法
JP5375058B2 (ja) 薄膜トランジスタアレイ及びその製造方法
KR20080011826A (ko) 유기 박막 트랜지스터 기판 및 이의 제조방법
KR101380225B1 (ko) 액정표시장치용 어레이 기판
KR20080041448A (ko) 유기 박막 트랜지스터 기판의 제조 방법
KR20110066746A (ko) 액정표시장치의 어레이기판 및 그 제조방법
TWI414064B (zh) 有機發光二極體顯示裝置及其製造方法
KR20090124546A (ko) 유기 박막 트랜지스터 기판의 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20080130

C20 Patent right or utility model deemed to be abandoned or is abandoned